TWI360153B - Adhesive sheet, semiconductor device, and producti - Google Patents

Adhesive sheet, semiconductor device, and producti Download PDF

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Publication number
TWI360153B
TWI360153B TW094112517A TW94112517A TWI360153B TW I360153 B TWI360153 B TW I360153B TW 094112517 A TW094112517 A TW 094112517A TW 94112517 A TW94112517 A TW 94112517A TW I360153 B TWI360153 B TW I360153B
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TW
Taiwan
Prior art keywords
adhesive
film
adhesive sheet
wafer
layer
Prior art date
Application number
TW094112517A
Other languages
English (en)
Other versions
TW200539291A (en
Inventor
Teiichi Inada
Michio Mashino
Michio Uruno
Tetsuro Iwakura
Original Assignee
Hitachi Chemical Co Ltd
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Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200539291A publication Critical patent/TW200539291A/zh
Application granted granted Critical
Publication of TWI360153B publication Critical patent/TWI360153B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Landscapes

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Adhesives Or Adhesive Processes (AREA)
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I6708pif.doc 九、發明說明： 【發明所屬之技術領域】 本發明為關於粘着片'半導體裝置及半導體裝置的製 造方法。 【先前技術】 处千’ k者千等體封裝體的小型化 等尺寸的CSP(Chip Size Package ，晶方寸尺構裝），及半 導體晶片多層疊積的疊層CSP，已甚普及。（參考例如曰本 專利特開2001-279197號公報、特開2〇〇2_222913號公報、 特開2002-359346號公報、特開2〇〇13〇8262號公報、特 開2004-72009號公報）。該些的例有如圖丨所示的，在配 線4形成的有凹凸之基板3上疊積半導體晶片的封裝 體。或如圖2所示的，使用同尺寸的半導體晶月ai兩片 以上的封紐，在㈣線2等形成凹凸的半導體晶片上， 再疊積別的半導體晶的封裝體等。如上述的封裝體，需 ΓΐΞίΪ填平Ϊ些凹凸’且能夠確保與上部之半導體晶 片的2性之枯着月。圖1及圖2中，Μ為枯接劑。 产大己線^線等的凹凸，通常使用增加枯着片厚 度大於凹凸的純的料，需 以改善其填充性。作 有乃⑽融枯度 . . an 另一方面，熔融粘度低又厚度大的 枯着片，在晶圓及枯着片切割時 破損加大，及、__碎频大之^的 即’通常的切割工程，俜將曰 在屹〜_溫;^人^糸將曰曰因枯着片及切割膠片 酿度貼合後，使用旋轉刀同時切斷，經清洗 16708pif.doc 附ΐ接劑的半導體晶片。在該切斷後形成的切割 认冰π粘着片或晶圓切斷之碎屑附著，該些碎屑在 =工程或半導體晶片檢拾時，由切割膠片剝 ，九…、的碎屑（樹脂碎片），附著在半導體晶片，有 時污染電極等。 &上述各點可知’現正期望有—種減片，不僅切割 性優良’且對配線或引線等形成的凹&的填充性優良，更 能夠滿足耐濕性或耐熱性。 【發明内容】 本發明的目的在於提供一種粘着片，可用於填充在基 板之配線，或在半導體晶片附設的引線等形成的凹凸，在 切割時不發生樹脂碎片，且能滿足其耐熱性或耐濕性。 本發明的發明人發現使用含有特定的樹脂組成的粘 着片’能夠防止在切割時發生樹脂碎片，而且能用以填充 基板的配線、或半導體晶片的引線等形成的凹凸(可在粘着 片中埋入凸部，或用粘着片填充凹部），完成本發明。 即，本發明使用含有交聯性功能基、重量平均分子壹 10萬以上，且Tg在-50〇C〜50°C的高分子量成分15〜40 重量％ ’及以環氧樹脂為主成分之熱硬化性成分60〜85 重量％的樹脂100重量分，加填料40〜180重量分，形成 厚度10〜250μιη的粘着片。 又’本發明的粘着片，在硬化前的25Ό，做動態粘彈 性測定的貯藏彈性率為200〜3000 MPa，在80°C的動態粘 彈性測定的貯藏彈性率為0.1〜10 MPa。 16708pif,d〇c 又 性測定所’在硬化後的17〇。。做動態枯着 、藏彈性率為2G〜600 MPa。 為1000^750==着片’在硬化前的贿的炫融枯度 〜120又重3明的魅着片’含有樹脂100重量分及填料60 =，f發明的粘着片，該填料的莫氏硬度為 3〜8。 5 m X月的粘着片，該填料的平均粒徑為0.05〜 5叫，比表面積為2〜2〇〇nf/g。 。。(：〜着片為在晶圓、枯着片及切割膠片在 膠月用旋轉刃同時切斷晶圓、枯着片及切割 =成=枯着片之半導體晶片，該附綱片之半 MP " 有凹凸的基板或半導體晶片上以0.001〜1 些:凸部重雜之卫程時’使用該枯着片之絲劑填充該 本發明的多層括着片，其第，接劑層及第二點 接劑層有形成直接的或間接騎積的構造， 接劑層由⑽着片形成，且該第—㈣劑層的 卩厚度apm與第一枯接劑層的流動量B^m、厚度 形成Αχ3<Β且ax2<b的關係。 a · s、 又，本發明的多層粘着片，該第一粘接劑層及第二 接劑層有形成直接的或間接的層積的構造，至少該第二 接劑層由上述之枯着片形成。且該第—枯接劑層的炫融勒 度aPa s尽度&μιη與第二枯接劑層的熔融枯度βρ:' 16708pif.doc 厚度bpm形成α>βχ3且ax2<b之關係。 又，本發明的上述之多層枯着片，'，曰 切割膠片貼合之際，與晶_接之側日日圓、點着片及 切割膠片枯接之侧為第二枯接劑層1接劑層’與 本發明的半導體裝置之製造方法， 着片及切割膠片在(^，貼合 二該粘 圓、枯着片及切割膠片、形成附著枯着片：半導:::晶 =_著粘着片之半導體晶片、用〇 : ::重在有凹凸的基板或半導體晶片上枯接之卫程。 载 又’本發明的該半導體裝置之製造方法 着片的半導體晶片在有凹凸的基板或半導 ^ 際，將該凹凸部加熱。 日^上粘接之 I其的半導體裝置，為使㈣料#將半導體晶片 =板’或將半導體晶片與半導體晶片_形成的半導體 裝置。 ^本專利申請案所揭露的，與2004年4月20曰提出申 请的1本專利案特願2004-124118號，及2004年12月3 曰申睛的日本專利案特願2004-351605號所記述的主題有 關連該些揭露的内容，被引用於本案之說明。 >為讓本發明之上述和其他目的、特徵和優點能更明顯 易廣’下文待舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 本發明軲着片的特徵為 ，使用含有交聯性功能基重量 1360153
• I * 16708pif.doc 平均分子量10萬以上’且Tg在-5(TC〜5(TC的高分子量成 分15〜40重量％’及以環氧樹脂為主成分的熱硬化性成分 60〜85重望：％的樹脂1〇〇重量分’加上填料〜18〇重量 分，形成厚度10〜250μιη的枯着片。 本發明的粘着片，只要是由含有交聯性功能基重量平 均分子量10萬以上，且Tg在-50。(：〜50。〇：的高分子量成分 15〜40重置％’及以環氧樹脂為主成分的熱硬化性成分的
二85重量％的樹脂100重量分，再加填料4〇〜18〇重量分 形成的粘着片，其構成成分無特別限制。但由需有適當= 粘着強度、成膜狀且處理性良好之點，除有高分子量成分、 熱硬化性成分、及填料之外，再含有硬化促進劑 '觸媒、 添加劑、聯結劑等亦佳。 、 咼分子量成分有如環氧基、乙醇性或酚性羥基、 等的有交麵功絲之城絲職、（間）_樹脂、& 烧樹脂、聚細樹脂、聚峨亞胺_、苯氧基樹脂、尚 性聚苯醚樹脂等，但亦不受該些之限制。 交 粘着片’高分子量成分的含量有樹脂的 US良好的填充性，高分子量成分的含量2〇〜3 重董％時更佳，最好為25〜35重量％。 高分子量成分，乃指Tg(玻璃移轉溫幻 :子=?聯性功能基'重量平均分子量10萬以上的高 兩其^子Ϊ成分有例如含有環氧丙基丙烯酸®旨、或環-丙基甲基⑽的魏性單體，聚合所得的重 9 1360153 f 16708pif.doc 上之/氧基含有(間)丙烯共聚合體等較佳。 ^ 合體，有例如__料心 體丙烯橡膠荨可使用，以丙婦橡踢較佳。 r盥係以丙賊酯為主成分，主要為丁基丙稀酸 等的?聚合體’或乙基甲基丙烯酸醋與丙稀腈 寺的共聚合體形成的橡膠。 贼高ΓΛ成分的Tg超過5 G °c時，有日_的柔軟性 臊月不易切斷，容易產生碎屑。 H)0二子量成分的重量平均分子量，在10萬以上、 合降低。八子量未滿1G萬触频㈣熱性可能 i，音旦1 萬触接膜流動有降低之場合。 準聚乙烯的色磺法(GPC) ’使用標 眉2晶圓切割時粘着片容易切斷、不易產生樹脂碎 =以及雜性高各點，Tg在撕〜啊重量平均分子 ^0萬〜90萬的高分子量成分較佳；Tg在-邮〜贼 刀子置為20萬〜85萬的高分子量成分更佳。 ^發·㈣熱硬化成分，以具有在半導體晶片實際 女裝時要㈣義性及耐祕之環_贿佳。又，本 =所稱之「輯氧_為主成分之熱硬紐成分」中^ 氧樹脂硬化劑。該環氧樹脂只要是硬化後具有枯接 ^用者即可，無特別限定。例如有雙盼A型環氧樹脂、雙 F型環氧細旨、餅S贿氧樹料的雙功能環氧樹 1360153 • · 16708pif.doc 月曰及紛酸π漆型環氧樹脂、或〒紛酴酸清漆型環氧 等的祕，漆型環氧樹脂等可使用。又，一般所知的二 如多功能環氧樹脂、縮水甘油基胺型環氧樹脂、含雜環^ 氧樹脂、或脂環式環氧樹脂等亦可適用。 衣衣 特別是在Β階段狀態的膠片可撓性高之點，環氧樹脂 的分子量在1000以下較好，更好在500以下。又，併用^ 撓性優良的分子量500以下之雙酚Α型或雙酚？型環氧樹 月曰50 90重里分，及硬化物的耐熱性優良的分子量〜 3000之多功能環氧樹脂10〜50重量分亦佳。 環氧樹脂硬化劑，可使用通常所用的公知硬化劑，例 如雙酚類、笨酚線型酚醛樹脂、雙苯酚八線型酚、醛樹脂 或甲（苯)酚線型酚醛樹脂等的苯酚樹脂等，在一個分中含 有兩個以上之苯酚性羥基、如胺類、聚酰胺、酸酐、聚硫 化物、三氟化硼、雙苯酚A、雙苯酚F、雙苯酚s等。 本發明的粘著月，為了提升在B階段狀態之粘着片的 切割性、粘着片的處理性、熱傳導性、及調整熔融濃度、 赋與攪熔性(thixotropic)等目的，混合填料最好用無機填 料。 無機填料有如氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、 矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼 酸鋁纖維、氮化硼、結晶矽、非晶矽、銻氧化物等。為提 尚其熱傳導性，氧化鋁、氮化鋁、氮化硼、結晶石夕、祚晶 石夕專較佳。如以調整其炫融枯度或賦與授熔性為目的，則 以氫氧化鋁、氫氧化鎂、碳酸鈣 '碳酸鎂、矽酸鈣、矽酸 11
imi53 1 I 16708pif.doc ::氧化鎂、氧化銘、結晶石夕、非晶石夕等較好。 為^其切割性則以氧化銘、石夕石較佳。 1〇0 的貯存彈性率為在_膜硬化後170°C 好。韓料ί 购，因引線接合性良好而受喜 :，里以對樹脂100重量分，用60〜爾量分較 佳使用60〜120重量分更好。 权 性降貯存彈性率過高，使料 故填料用量在分:==性減低之問題， 則有在切割時容易發生;：:傾:真料的配合量少時’ 人，發現依填料的添加可大幅減少在下述的 樹脂碎屑。即切割工程，通常用旋轉刀同 的半導ΐ曰片膠片’清洗後取得附著枯着片 曰曰片。在該切斷後形成的切割膠片的溝，附著枯 斷的碎屬，該些碎屬在切斷時或切斷後等的 或檢^時，由切轉片剝離成絲狀，發生樹脂碎屬。 填料使明的枯着片之場合，特別是使用石夕、氧化鋁 重量分配合40〜⑽重量分的情況，切 ===或石夕的切斷屬’形成以填料為中心的細粉 谷易與〉月洗水一起除去。因此，使用本發明的點着 在切#]膠>{上溜停的切斷屬量很少。又因該少量的 切斷屬密着在切#]膠片上’很難從切郷片_成絲狀。 .相對地’在不含有填料之場合，切斷屬成枯土狀，因 12 1360153 16708pif.doc 不成與清洗水-起除去，故在切割膠片上附著多量的切斷 屑該些切斷屑，在清洗時或半導體晶片檢拾時很容易從 切割膠片剝離，故發生多量的樹脂碎屬。 〃再者’因本發明的枯着片含有填料，在切斷枯着片時 旋轉刃不殘邊祕脂並同時研磨旋轉刃，可在短時間内良好 着片。因此，從旋轉刀的研磨效果及枯着片的切 斷性一點，點着片以含有硬填料較好，以含有硬度在莫氏 度)3〜8之闕料料較佳，含有莫氏硬度6〜 y、、;权佳。如填料的莫氏硬度未滿3時，旋轉刃的研 if果小，莫氏硬度超過8，财旋轉轉命減短之傾向。 =度3〜8的填料’有方解石、大理石、金陶、鐵 ϊί3)及氣石、珍珠(莫氏硬度4)、鱗灰石、玻璃 曰（莫氏硬度5)、正長石、蛋白石等(莫氏硬度6)、石夕、水 電石等(莫氏硬度7)。其中以價格低容易入手的石夕最適 的平均粒徑未滿⑽卿則保持填料對旋轉刃的 磨效果及料#的流紐，有目難之躺。又平均粒 :則枯着片的薄膜化困難，要保持着片臈表面的； 困難之傾向。因此’為保持枯着片的流動性及表 的平滑性’填料的平均粒細㈣5〜5叫較好 r由優itr平均粒徑的下限為一，最好_二 又，由平滑性之點，平均粒徑的上限為3μιη，最好用_。 發贼肖#射繞射式㈣分布測絲
Micr〇㈣測定填料的平均粒徑。具體的說，先量取填料 1360153 » » 16708pif.doc 0.1〜1.0克，用超音波分散後，測定其粒度分布以該分 布的累積重量50%的粒徑為平均粒徑。 填料的比表面積亦與填料的平均粒徑同樣，由流動性 及表面平滑之點’比表面積2〜細mvg較好。再由流動 性之點，比表面積之上限以50mvg較佳，10jrf/g則特佳。 又，本發明的比表面積(ΒΕΤ Λ表面積)係依 Bnmauer-Emmett-Teller式，在無機填料中吸著氮氣測定 其表面積之值，可使用市面販售的BET裝置測定。 本發明的枯着片為將上述高分子成分、環氧樹脂為主 成分的熱硬化成分、填料、及其他成分在有機溶媒中混合、 攪拌調製成清漆後，在基材膠上形成該清漆的層，再加 熱乾燥後除去基材，製成粘着片。上述的混合、^拌，可 利用通常的擾拌機、研磨授拌機、三輥滚輪、球研磨機等 分散機適宜組合進行。上述的加熱乾燥之條件，無特別限 疋，/、要肖b夠讓使用的i谷媒充分發揮即可，但通常在6〇〇c 〜200°c進行加熱0.1〜90分鐘。 上述粘着片製造的清漆之調製所用的溶媒，及粘接膜 調製後的殘存揮發部分，只要能將材料均勻溶解，可攪拌 或分散的即可無特別限定，可使用先前公知的溶媒。如此 的溶劑有例如二甲基曱酰胺、二甲基乙酰胺、N-甲基吡咯 燒酮、丙酮、甲基乙基酮、環乙酮等的酮系溶媒、及甲苯、 二曱苯等。從乾燥速度快、價格低廉之點，以甲基乙基酮、 環乙酮等較好使用。 有機溶媒的使用量，只要粘接膜調製後的殘存揮發部 16708pif.doc 分在全重量基準之0·01〜3重量％即可，無特別限定，但 從耐熱信賴性之觀點，以在全重量基準之0.01〜2重量％ 較佳’佔全重量基準之〇.〇!〜][5重量％更好。 枯着片的膜厚’為了要填充基板的配線電路，或設在 下層之半導體晶片的金屬引線的凹凸，設定在1〇〜 250μπι。比1〇μιη更薄，則有應力緩和效果或粘着性變差 之傾向；膜厚度大於25〇μιη則不僅不經濟，亦不能適應半 導體裝置之小型化要求。又從粘着性高且能使半導體裝置 J、型化之點膜後以20〜l〇〇pm較好，4〇〜更佳。 ，本發明的粘着片，在硬化前(Β階段狀態)25¾的動態 粘彈性測定所得貯藏彈性率為2〇〇〜3〇〇〇 MPa之場合，因 切割性優良之點，較適合。從切割性優良且與晶圓的密接 性優良之點，貯藏彈性率為5〇〇〜2〇〇〇MPa更佳。又，在 粘着片。硬化前(B階段狀態)8(rc的動態粘彈性測驗所得的 3彈性率為G.1〜1〇 MPa時，則8G°C時可能在晶圓上形 成溥片。如特別注重對晶圓的高密接性，貯藏彈性 〜5 MPa更佳。 ，. 本發明料片，硬化前(c階段狀態)在，17(rc的動態 以無性測驗所得貯藏彈性率，為得到良好的引線接合性， 20:600 MPa較佳。該貯藏彈性率為4〇〜6〇〇 Μρ&更 ’最好為40〜400 MPa。 彈性率，可使用動態枯彈性測定裝置(Rheolgy社製， 固^4)測定(樣品尺寸：長度2〇mm、寬度4匪，溫度範 〜200C、升溫速度5°c/min、拉張模式、l〇Hz、自 1360153 ' 16708pif.doc 動靜電荷）。 本發明的粘着片，使用有多層構造的多層粘着片亦 可。例如將上述的枯着片二片以上疊層而成的，或將本發 明的粘着片與其他粘着片複數疊層的皆可用。 例如可用含有第一粘接劑層與第二粘接劑層直接戋 雜層積的構造之多層枯着片，至少該第二枯接劑層是由 ::本發明_着片形成，且該第—雜劑層的流動量厚 鲁 度aMm ’與第二雜劑層的流動量B、厚度_形成心 ..<；8且狀2<1)之關係。該多層枯着片在晶圓、枯着片、及 切d膠片貼合之際，以其第一粘接劑層侧枯接晶圓，第二 粘接劑層側粘接切割膠片較好。 . 如上述的使用兩層粘着片，可對應A或B的絕對值， 在枯，時選擇適當的壓力、溫度、時間(其中特別是壓力）， 可使第一層埋入凹凸部，第一層不被凹凸部突破之狀態粘 接·亦即旎確保配線或引線的充填性、及配線或引線與上 部半導體晶片的絕緣性。AX32B之場合，第一枯接劑層 鲁 妨礙配線或引線侵入的效果低，在基板上形成凹凸的電路 或引線’與位在上部之半導體晶片接觸，有不能確保絕緣 之傾向。又，ax2gb之場合，對凹凸或引線的充填性低， 有易發生空隙的傾向。 本發明中的流動量，為將粘着片與PET膠片打穿成 1X2Cm的帶狀之樣本，再用熱壓接合試驗裝置（日本Taster 產業株式會社製），以熱板溫度lGGt：、Μ力1 MPa，施壓 18秒鐘後，可用光學顯微鏡測定由樣本的端部突出的樹脂 16 1360153 16708pif.doc 之長度。 又’例如可用由第—枯接劑層與第二枯接劑層形成直 接的層，造之多層粘着片’至少其第二粘接劑 曰-發明枯著片形成’且該第一枯接劑層的溶融枯度 二=s厚度apm’及該第二枯接劑層的溶融枯度ppa.s， ，成a>px3j_ax2<b之關係。該多層枯着月，
B曰圓ϋ着片、及切割膠#貼合之際，第—枯接劑層側 /、曰曰圓粘接、第二粘接劑層侧粘接切割膠片較佳。 如上述的使用兩層枯着片，可對應α*ρ的絕對值， 在枯接時選擇適當的壓力、溫度、時間(其中特別是麼力广 可使第-層將凹凸部埋入，第一層不被凹凸部突破之狀態 枯接。亦即能確保配線或引線的充填性，及 上部半導體^的絕緣性。„^<3之場合，第^^層 妨礙配線或引線侵入之效果低，在基板上形成凹凸的電路 或引線，與位於上部的半導體晶片接觸，有不能確保絕緣
又’ axGb之場合’凹凸或引線的充填性減低， 有谷易發生空隙之傾向。 本發明的熔融粘度，可用後述的平行平板塑性計法， 測定硬化前的粘着片，計算之。 ° η又Λ，上述之Ainu各別在適當的範圍内 較好。A在100〜400μπι，B在3〇〇〜2〇〇〇μιη較好，太低 時，充填性惡化；太大咖有自半導體“端部 出 太多之傾向。《以3000〜150萬Pa · s較好，ρ在1〇〇〇〜 7500 Pa . s較好，1〇〇〇〜5_ pa · s更好，最好為测〜 17 1360153
I6708pif.doc 3000 Pa · s ’過高則充填性惡化；過低則有自半導體晶片 端部，樹脂浸出太多之傾向。又，a在5〜30μιη，b為10 〜250μηι較佳。又，粘着片以單層使用之場合，粘着片單 體的流動量、熔融粘度及厚度亦各別在上述之Β、β及b 之範圍内較好。 第一枯接劑層只要能在80°C以下貼附晶圓，無特別限 制’如曰立化成工業(株式會社)製的High Touch HS-210、 HS-230等可使用。第二枯接劑層，可使用本發明的枯着片。 較佳的組合之一例，有如用High Touch HS-230(流動 量250μηι、厚度ΙΟμιη、熔融粘度32萬Pa · s)及本發明的 粘接膜（流動量ΙΟΟΟμηι、厚度7〇μχη、熔融粘度22〇〇 pa · s)。此場合，可滿足 Αχ3<Β、α>ρχ3、ax2<b 的 係式。 本發明的粘着片’可以單獨使用，亦可例如將本發明 的枯着片廣積在先前公知的切割膠片上，形成切割膠片X 一 體型枯着肢用亦可^此場合，晶圓的層積卫程可一次完 成’作業更可效率化。 ^ 本發明使用的切割膠片，有例如聚四氣乙缔膠片 乙稀對苯二酸轉片、聚乙稀膠片、聚丙烯膠片m 戊烯膠片、聚酰亞胺膠片等的塑料膠片。X 專= 行初級塗布、uv處理、電暈放電 声义要日令進 處理等表面處理亦可。切割膠片有粘着性較佳，：丄= 加_紐亦可，或在上述塑料膠片的表面^ μ θ亦佳。即在該塑料膠片塗布樹脂組成物，再依ς燥 18 16708pif.doc 法調整樹脂組成物的液狀成分之比率、高分子成分的Tg， 使其具有適度的粘性強度。 又，粘着片在半導體裝置製造之際，使用之場合，希 望在切割時林使半導體^飛散_着力，在其後的檢 拾時又可以自切割膠片剝離。譬如，枯着片的枯着性過高， 則檢拾有_。因此需要適當地調節歸U着強度，其 方法為利用提高料片的室溫之流動量，,舖強度有上升 之傾向’及流動量減低則歸強度有下降之傾向即可。例 如’要提高流動量之場合，有增加可塑劑的含有量、增加 ^看性材料含量等方法。相反地，要減減動量之場合， 減少上述化合物含量即可。上述的可塑财例如單 ，單；:單功能的環氧樹脂、液態環氧樹脂、· 系树月曰、裱氣糸的稀釋劑等。 在切割膠片上層積枯着片的方法，除印刷法之外，尚 壓成片在切割膠片上壓著的方法，及熱滾 喜、滾料層法可連續的製造，效果較優較被 又^娜片的财’無特別之 厚或切割膠片-體型㈣片的用途，及該举者 f5〇但依經濟性佳及膠片的處理性良好之點，採用= 15〇μπι’更好為70〜13〇脚。 休用60〜 適用====導體製造較好，更 切割臈片在。。晶圓、枯着片、及 貼δ後，用％轉刃同時切斷晶圓、 136〇153 16708pif.doc 粘着片及切割膠片，形成附著枯接 該附著粘着劑的半導體晶片在有二：導體曰曰片’及將 上，用0.001〜IMPa的載重壓接=板或半導體晶片 程。 接用粘接劑充填凹凸之工 本發明的晶圓，除單結晶石夕 陶竟，钟化料化合物料導體可使/有夕4 ’各種 ㈣t片^層使用之場合，在晶圓貼合枯着片後，再於 黏着片面貼&切割谬片即可。 夕 ， ' 順序在晶圓上貼用第—粘接劑:：接:m =層_點合到晶圓亦可。；:=== 片，亦可製造半導職片的切—體型枯着 枯着片在晶圓貼附的 8〇。(： ’吹〜8(TC較好，更皿^ Ρ成;^為叱〜 枯接劑貼附後，晶圓的料好有為加:=。超― 上述=ί:割膠片-體觸片貼附之際，亦在 Λ ^ b ' 施例的多層粘着片c、半導體4不本發明的另-實 面圖。圖4中，"圓A、及切割膠片1的斷 其次ml第一枯接劑層’ b’示第二枯接劑層。 導體晶圓，再經清着片與切割膝片的半 乾燥程序，可得附著粘接劑的半導 20 1360153 16708pif.doc 1360153 曰曰 片 又’其他的實施縣如圖6所示，本發㈣ 基材膠片5之上面設置粘着片b的附帶基材二 着片使用亦可。如此則在枯着片單體理乂 ’ 方便，例如圖6所示附基材踢片 、“亦較 男占合後，剝離該基材膠片5，其後再貼:半ί體片 ==:構造’又，不剝離該基材膠仏 聚丙^材料鱗職定，例如聚轉片、 聚丙烯膝片、t對本二甲酸乙醋膠片、聚跌亞 峨亞胺膠片、聚__片、甲基戊騎片等: 片，如圖7所示的該多層枯着片，依第 、苐一枯接劑層a_序在基材勝片上層積 也可以。又’依第一粘接劑層 、 在基材膠片上層積也可Γ 第—難劑層㈣順序 2播^七月甘之枯着片的另外之實施例為如圖6及圖7所示 此藉^善^、枯着片自身並擔當切娜片的功能，也可以。 此種拈着；接—體魏 ==㈣的功能，故如圖8所示，= 檢拾就了侍到附粘着劑的半導體晶片。 化性#持有上叙功能’例如錄着#含有光硬 J二二子成分、光硬化性單體、光引發劑等的光硬化性 如上述的一體型膜片’在半導體晶片與基板 5 Βθ片粘接之階段，一直進行光照射，其硬化前的 21 16708pif.doc 25°C之動態_性測定之貯 態娜測定之貯藏彈性率各值，乃;=:動 熱硬化進行前之階段測定之值。姚、、、射進仃後 切割晶粒枯接—體型的枯着片，最好使用於这種半導 體裝置的製造工程，㈣、a 用種半導 Γί二阶貼二旋二== ==?===二: Pa壓接，用該粘着劑充填凹凸部等工程。 i ^ f，示’上述所得的難着劑的半導體晶片A1， 線场成有凹凸的基板3或由引線形成凹凸的半導 轉劑Μ用载重0.001〜1 Mpa壓著，由枯 1劑^充填凹凸部。載重㈣〜贿較好，謹〜0.3 二af好。載重小於〇.〇〇1MPa則有發生空隙降低耐熱性 之傾向’超過lMPa則可能使半導體晶片破損。 圖5示將_着劑的半導體晶片在連接引線的半導體 日日片粘接時的工程之一例的概略圖。 本發明，在將祕着義半導體晶片向基板或半導體 j ^接時’對基板配線、半導體晶片的引線等的凹凸部 加熱較好。加熱溫度6(TC〜24(rc較好，1〇〇。〇〜18〇。〇更 佳。溫度低於60。(：則有枯接性減低的傾向，超過24〇。〇則 形’有f曲變大之傾向。加熱的方法，有使基板或 —晶片接觸預先加熱的加熱板法，及在基板或半導體 晶片照射紅外線或微波、或吹熱風等方法。 22 1360153 16708pif.doc 本發明因使用含有特定之樹脂組成的粘着片，在切割 時^旋轉刃切#_1晶圓或枯着片發生的切割碎屬，在切斷後 的/月洗時’或晶片檢拾時，能夠不會從切割膠#剝離成絲 狀。^有多層化的成層構造，_是流動性低的層與高 的層疊積_着片’魏祕度高的層與低的層疊積的枯
着片，其配線電路及引線的充填性，及上下之半導體晶片 間的絕緣性皆優良。 BB
又’本發明的枯着片，對配線電線及引線的充填性良 好且在半導體裝置的製造時，在晶圓與枯着片同時切斷 的切割工程之切斷性優良，能陳高切割之速度。因此， 使用本發明触着片，可提高半導體裝置的良率及製造速 度。 再者，本發明的枯着片，在半導體裝置的製造之半導 體晶片與基板或下層晶衫的支持部件触接I程中，可 接信賴性優良触着片使用。即本發明的枯着片， 在半導體搭_支持料上安裝半_晶>{時，有必要的
耐熱性、耐濕性、絕緣性，而且作業性優良。 【實施例】 〔粘着片的組成與製造方法〕 第一實施例 θ吏用型環氧樹脂(環氧當量160、東都 ί社製、商品名YD-8170C)30重量分，及甲酴、 品名YD=:ii量：〇:，成株式會社製 '商 里刀衣乳树脂的硬化劑使用苯酚酚 23 1360153 " 16708pif.doc _脂(大日本ink化學工業株式會社製、商品名Pri〇fen LF 2882)27重量分。含有環氧基的丙烯系共聚合體，使用 含有環氧基的丙烯橡膠(凝膠滲透色譜法所得重量平均分 子量80萬、曱基丙烯酸縮水甘油脂3重量％、Tg _7它、
Nagase Chemtechs 株式會社製、商品名 htr_ 860P-3DR)28 , 重量分。硬化促進劑使用味唑系硬化促進劑（四國化成工業 :株式會社製、CUres〇l2PZ-CN)0.1重量分。矽填料使用（株 • 式會社 Admatechs 製、Admafine SO-C2、比重 2.2 g/c πί、 莫氏硬度7、平均粒徑〇.5μπι、比表面積ό·0 m2/g)95重量 分。矽烷偶聯劑使用（日本Unica株式會社製品、商品名 A-189) 0.25重量分。將上述之組成物再加入環乙酮混合搜 • 拌，再真空脫氣製成粘着劑清漆。 再將該粘着劑清漆在厚度5〇μιη的經過脫模處理的聚 對本一甲酸乙一酯膠片上塗布，經90°C、10分鐘及120。〇、 5分鐘的乾燥，形成膜厚75μηι的塗膜，製作成B階段狀 態的粘着片。此膠片的流動量為757μιη。 • 將粘着片b以60。(：在欲加工的半導體晶圓Α(厚度 80μπι)形成疊層’並切斷其邊端。再用熱軋輥成層器(H〇t
Roll Laminator，Du Pont 製 Rist〇n)在 25〇C形成切割膠片 1(圖3)。此時的切割膠片使用古河電工(株式會社)製的(uc * 3004M-80)。切割膠片厚度i〇(^m。 第二實施例 第一粘接劑層使用HS-230(厚度1〇μιη)’第二枯接劑 層用與第一實施例同樣的枯着片在60°C成層，製作成有第 24 16708pif.doc 多綱片。在第-卿層與第二 200卿，曰第：：，測定流動量之結果，第-粘接劑層為 μ 第一粘接劑層為758μιη。 同=夕層枯着片，用其第一枯接劑層與欲加工
8〇㈣在6〇。。枯接，形成疊層，再切C 膠片1上與第二枯接劑層b枯接配置，Ϊ 4、層壓器(DU P〇nt製胸〇啦25。〇形成疊層（圖 。在時切割膠片使用古河電工（株式會 "
3004M，。切割膠片厚度⑽陣。胃社Α的(UC 第三實施例 本不實Γ製造與卜實施例同樣刪片，只有膜厚 比較例一 造枯為=2第—實關同樣的材料製 第四〜第八貫施例及比較例二、三 製造與第一實施例同樣的枯着片，惟其 基含有丙烯橡膠的含量，變更為如表一 、曰 衣氧 〔評價項目〕 π。 (1)硬化後的彈性率 在c階段狀態，粘着月的17(rc之彈性 钻彈性測定裝置(Rheology社製、使用動態 寸：長20mm、寬4mm，溫度範圍_3(TC〜定（樣品尺 度5t：/min，拉張狀態10Hz、自動靜載重）。C，升溫速 25 1360153 * * 16708pif.doc (2) 枯着力 在120 C的熱板上，將半導體晶片（5mm正方形)在鍍 金基板(在附銅箔的片狀基板鍍電解金(Ni : 5μπι，Au : 〇.3μιη))上用粘着月粘接，進行13〇。〇、3〇分鐘及+ 17〇。〔、 _ 1小時的熱處理。再測定該試料的85t:/85%RH、及經48 ，小時吸濕後在260。(：的剪斷強度。 (3) 層壓性 用熱軋軺·層壓器（6〇°C、OJm/分、〇.3 MPa)，將寬度 ΙΟμιη的枯着片與晶圓貼合，其後，再用t〇y〇Balwin 製UTM_4_l〇〇型萬能拉力機在25。〇的氣氛中，將粘着片 以90。的角度及50mm/分的拉張速度剝離，推求其9〇。角度 ，剝離強度。90。角的剝離強度大於30 N/m之場合表示層 1"生良好(〇），90。角的剝離強度小於3〇 N/m時層.壓性不 ' 良(X)。 (4) 流動量 對粘着片與PET膠片打穿成1x2cm的帶狀樣本，用 • 熱壓接合試驗裝置（日本Taster產業株式會社製），在熱板 溫度100°C，壓力1 MPa施壓18秒鐘後，再用光學顯微鏡 測定由樣本的端部突出的樹脂之長度，當做流動量。 (5) 切割性 使用切割刃切割附著粘着片、切割膠片的半導體晶 圓，再經清洗、乾燥後獲得附著粘着片的半導體晶片。: 時測定半導體晶片侧面之裂紋的最大高度，及樹脂毛刺的 長度，該些在30μιη以下之場合為〇，30μηι以上時為乂。 26 J6708pif.doc 用附荽㈣于破裂性、耐溫度循環性 胺為基材製成的有^ 1Gllm + 4度25师的聚酰亞 順、i秒貴絲板，在ο.1 面形成_，财衫^單 磨半導體W的斷面，料學^㈣評估係研 W+，/f ，左士 f’肩喊鏡觀察配線基板的凹凸 附近，調查有無直徑5μιη以上的 ， =者^直徑5μ.以上之空隙者:表= 用耐逆流破裂性與耐溫度循環試驗： 為價方法為，因樣本表面的最高溫度 為260 C，在攻疋保持該溫度2〇秒鐘的瓜反射爐 樣本’然後放置在室溫冷卻處理，如此反覆處理:次，用 目，與超音賴微鏡，樣本巾的肢。如1()個試料全 部未發生裂紋則為〇，有___上發㈣紋則為χ。 耐溫度循環性，係將樣本在_55t的空氣中放置3〇分 鐘’其後在mt：的空氣中放置％分鐘，如此過程叫一循 環；在經麵循環後，用超音波顯微鏡觀察剝離或裂紋， 如ίο個試料全部未發生則以〇表示，有—個以上發生則為 X。 (7)引線充填性 將半導體晶片及钻着片，與在半導體晶片上形成高度 60μπι的金引線(直徑25μιη)之配線的半導體晶片，用〇1 MPa ’ 1 see.，160。〇的條件貼合製成樣本，並對此樣本進 行充填性評價。即研磨該半導體晶片的斷面，再用光學顯 27 1670Spif.doc 微鏡調查引線附近有無直徑5μιη以上的空隙。無直徑5卿 以上之空卩$者為Q，有直徑5μπι以上空隙者為χ。 (8) 硬化前的彈性率 ，Β階段狀態，粘接膜的25〇C及80¾的彈性率，使 用動祕彈㈣彳线以版^哪社製，DVE_V4>】定(樣 本尺寸·長20mm、寬4mm，溫度範圍_30〜2〇〇。〇，升溫 速度5 C/min，拉張形式ι〇Ηζ、自動靜載重）。 (9) 熔融粘度 粘着片的熔融粘度，使用下述之平行平板塑性計法測 定、計算之值。即將粘着片成層製作成厚度1〇〇〜3〇〇μιη 的膜片’再將該膜片打穿成直徑u.3mm的圓形試樣，在 l〇〇°C以載重3.0 kgf加壓5秒鐘，由加壓前後的試樣之厚 度’利用公式1計算熔融枯度。在第二實施例的膜片，測 疋各層的熔融粘度之結果，第一粘接劑層為32萬Pa · s， 第二粘接劑層為2640 Pa · s。 ί=η 3V2/8tiF(1/Z4- 1/Z04)…一公式 j 式中’ZO為加壓前粘着片的厚度，z為加壓後粘着 片之厚度’V為枯着片的體積，F為施加之載重，t表示加 壓之時間。 以下詳細說明該樣本的製作方法，在粘着片單體的厚 度未滿ΙΟΟμπι之場合，可使用複數的粘着片貼合形成1〇〇 〜300μιη的厚度。因厚度在100〜3〇0μΓη時，測定值有較 佳的再現性。例如枯着片單體的厚度4〇μιη之場合，可用 粘着片3〜7片貼合即可。貼合之條件雖因樣本而異，只要 1360153 • 16708pif.doc 在測定中在貼合面不發生剝離即可，通常在該粘着片不進 行硬化之條件下貼合。 表一示評價結果。 表一 •. 項目 單位 實施例 — 三 四 五 六 七 八 HTR-860P-3 重量分 28 28 28 44 33 32 28 44 S0-C2 重量分 95 95 95 47 66 177 41 110 高分子量成分 重量％ 29 29 29 40 33 32 29 40 $料（對樹脂100重量分） 重量分 100 100 100 42 66 .179 43 99 膜厚 β m 75 75 50 75 75 75 75 75 C階段彈性率（17〇。〇 MPa 160 120 160 50 90 200 100 140 粘着力 kg 2 2.3 2 1.8 2 1.6 1.8 2.2' 層壓性 一 〇 O 〇 〇 〇 〇 〇 〇 流動量 β m 757 758 759 760 1200 770 1800 680 切割性 一 〇 〇 〇 〇 〇 〇 〇 〇 充填性 •— 〇 〇 〇 〇 〇 〇 〇 〇 耐逆流性 —---- _ 〇 〇 〇 〇 〇 〇 〇 〇 耐溫度循環 — 〇 〇 o 〇 〇 〇 〇 〇 引線充填性 _ 〇 〇 〇 〇 〇 〇 〇 〇· J^^(100°C) Pa _ s 2640 2640 2630 2630 1660 2600 1110 2940 _5_¥段彈性率（25。0 MPa 600 580 614 340 380 900 320 560 段彈性率（8〇。〇 MPa 1 1 1.4 0.8 0.3 1.9 0.8 1.1 29 1360153 - 16708pif.doc 表一 項目 單位 比較例 一 —— 三 HTR-860P-3 重量分 28 66 66 S0-C2 重量分 0 253 57 南分子量成分 重量％ 29 50 50 填料（對樹脂100重量分） 重量分 0 190 43 膜厚 β m 75 75 75 C階段彈性率（170°c) MPa 40 800 30 粘着力 kg 1.6 0.1 2.6 層壓性 — 〇 X 〇 流動量 β m 2000 130 340 切割性 _ X X X 充填性 _ 〇 X X 财逆流性 _ 〇 X 〇 耐溫度循環 — 〇 X 〇 引線充填性 — 〇 X X 熔融粘度（100°C) Pa · s 980 15380 7700 B階段彈性率（25°C) MPa 200 1200 600 B階段彈性率（80°C) MPa 0.05 15 3 第一至第八實施例的粘着片，切割性良好，基板或引 線的凹凸之充填性亦良好。比較例一至三的钻着片，任一 項之切割性皆不良。 以上用實施例說明本發明，可知本發明之粘着片有以 1360153 16708pif.doc 下之作用效果。使用本發明之枯着片之場合，在 體裝置的切割工程時，能夠良好切斷晶圓與枯着片、。又， 在切割時無半導體晶片飛出，檢拾性亦良好。又在 晶片與有凹凸的基板，附引線的半導體晶片的粘接工担 時:充填性優良。又在搭載半導體用支持部件，安震半^ 體晶片時，具有必要的耐熱性與耐濕性，且作業性 。 因此，使用本發明枯着;i，可提升半導體裝置的信=， 同時亦提高半導體装置的加工速度及良率。 、，
雖然本發明已以較佳實施例揭露如上，然其 限J本發明何熟習此技藝者，在频離本發明2二 和祀圍内’當可作些許之更動與㈣，因此本發明之^ 範圍當視後附之申請專利範圍所界定者為準。 ，、D 【圖式簡單說明】 圖1，示CSP的一個實施例之斷面圖。 圖2，示疊層CSP的一個實施例之斷面圖。 Θ 3示本發明的枯着片、半導體晶圓、及切割膠片 的一個實施例之斷面圖。 圖4 ’示本發明的多層枯着片、半導體晶圓、及切割 膠片的一個實施例之斷面圖。 圖5,不使用本發明的粘着片之附粘接劑半導體晶 片’與有引線接合的晶片钻接時之工程的—個實施例 略圖。 圖6示本發明的附基材膠片的粘着片之一個實施 的斷面圖。 31 1360153 16708pif.doc 圖7，示本發明的附基材膠片的多層粘着片之一個實 施例的斷面圖。 圖8,示本發明的附粘接劑的半導體晶片之一個實施 例的斷面圖。 【主要元件符號說明】
A 晶圓 A1 半導體晶片 a 第一粘接劑層 b 钻着片 bl 粘接劑 b， 第二粘接劑層 c 多層枯着片 1 切割膠片 2 引線 3 基板 4 配線 5 基材膠片 32

Claims (1)

1360153 16708pif.doc 爲第94112517號中文專利範圍無劃線修正本 修 正日紙100年4月21臼 十、申請專利範圍： 1. 一種粘着片，其特徵為： 由含有交聯性魏基重量平均分子量1()萬以上 萬以下，且Tg為_5〇〜5〇。〇的高分子量成分15 %’及環氧樹脂為主成分的熱硬化性成分6q〜8 ^ 樹脂100重量分，以及 至里/6的 填料60〜120重量分，以及 該粘接膜的厚度為10〜250μιη。 2. 如申料圍第丨項所述的料片，其特 在硬化前之2 5。(：，由動態枯彈性測定所得的貯強’ 率為200〜3_ MPa ;耽時動態粘 :： 性率為0.1〜lOMPa。 心07財臧彈 3_如申料利翻第丨項所述触着# 在硬化後之丨7()。(：時動_雜測定所得貯性、=為， 〜600 MPa。 千马2〇 屯如申請專利範圍第丨項所述的粘着片，i 鲁在硬化前之找祕度為刪〜测^^/又马’ 5. 如申請專利範圍第1項所述的粘着片，其 該填料的莫氏硬度為3〜8。 ± 6. 如申請專利範圍第丨項所述的粘着片’其特徵為該 填料的平均粒徑為〇.05〜5μιη、比表面積為2〜2〇〇 Μ% f 7. 如申請專利範圍第丨項所述的粘着片，係在將晶 圓、枯着片及切割膠片在(TC〜耽貼合，再用旋轉=同 時切斷晶圓、粘着片及切割膠片，形成附著粘着劑之半導 33 1360153 - 16708pif.doc 爲第94112517號中文專利範圍無劃線修正本 · 修正日期:100年4月21曰 體晶片後，將該附著粘着劑之半導體晶片在有凹凸的基板 或半導體晶片，以0.001〜1 MPa之載重壓接，用該填着劑 充填凹凸之工程使用。 • 8. 一種多層粘着片，具有第一粘接劑層與第二粘接劑 層直接的或間接的層積之構造，其特徵為， 至少該第二粘接劑層係由申請專利範圍第1項所述的 粘着片構成，以及
且該第一粘接劑層的流動量Αμπι、厚度apm，與該第 一枯接劑層的流動量Βμιη、厚度bpm，形成Αχ3<Β且a><2 <b之關係。 9. 一種多層粘着片’具有第一粘接劑層與第二粘接劑 層直接的或間接的層積之構造，其特徵為， 至少該第二粘接劑層係由申請專利範圍第1項所述的 粘着片構成，以及 且该第一粘接劑層的熔融枯度apa · s、厚度，與 該第二粘接劑層的熔融粘度pPa · s、厚度，形成α> ββ且ax2<b之關係。 片，10.如申請專利範圍第8項或第9項所述的多層粘着 圓-、特徵為，在晶圓、粘着片及切割膠片貼合時，盥晶 劑:接側為第—枯接劑層；與切割膠片轉側為第二枯接 11. -種半導體裝置的製造方法，其特徵為包括： 的粘Γ ί圓、申請專利範圍第1項至第9項之任-項所述 、及切割膠片在Ot：〜8(TC貼合；用旋轉刃同時 34 136.0153 « 167〇8pi£doc · . 爲第941125丨7號中文專利範圍無劃線修正本 修正日期:1〇〇年4月21曰 切斷晶圓、粘着片及切割膠片，形成附著粘着劑的半導體 晶片後；將該附著粘着劑之半導體晶片，用〇 〇〇1〜1 Mpa 之載重’在有凹凸的基板或半導體晶片粘接，用粘着劑填 充凹凸之工程。 • 12.如申請專利範圍第11項所述的半導體裝置的製 造方法，其特徵為，在將附著粘着劑的半導體晶片在有凹 凸的基板或半導體晶片上點接之際，將該凹凸部加熱。 鲁 13.種半導體裝置，其特徵為使用申請專利範圍第 1項至第9項之任一項所述的粘着片，粘接半導體晶片與 基板’或粘接半導體晶片與半導體晶片形成的半導體裝置。
35
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