Classifications

• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C21/00—Alloys based on aluminium
  • C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
  • C22C21/08—Alloys based on aluminium with magnesium as the next major constituent with silicon
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
  • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
  • H01L23/495—Lead-frames or other flat leads
  • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

• the present invention relates to a material for conductive parts of electronic and electrical equipment which is further used in conductive parts such as semiconductors and Ic (integrated circuit) lead frames or connectors and switches. This is related to electronic materials that exhibit conductivity (heat dissipation), solderability, plating, high mechanical strength, and good bending characteristics.
• conductive components used in electrical equipment include discrete semiconductors such as transistors, leads used in ICs, large-scale integrated circuits (LSIs), and SCRs (Si Ie Control iea Recti fie thyristors).
• LSIs large-scale integrated circuits
• SCRs Si Ie Control iea Recti fie thyristors
• a strip material having a thickness of 0.1 to 0.5 made of a conductive material as a lead frame material is prepared, and the strip material is subjected to breath punching or etching to obtain a required lead frame shape (however, the outer lead sides are mutually connected). Lucky), and then a high-purity Si etc.
• the semiconductor element (S ⁇ chip) is joined. This joining is called “diode date”, and is performed by pressure bonding using a conductive resin such as Ag paste or pre-bonding.
• a conductive resin such as Ag paste or pre-bonding.
• a method consisting of one kind of single layer or two or more kinds of multi-layers is formed, and then heat-expanded and pressed through this layer to utilize eutectic such as Au-Si. Integrate the semiconductor chip with the rhino-ream: the method, the method of joining using PD-S ⁇ solder, etc.
• the semiconductor element, the connection part, and the lead frame at the part where the semiconductor element is mounted are sealed with a resin, ceramic, or the like to finally protect the lead frame.
• the plug assembly also has a switching property, and a process of die-bonding the semiconductor element (Si chip) and the lead frame.
• Heat resistance water deficiency
• Fe-42; ⁇ ! Alloy 42, or Fe 17?? 0-299-6 ⁇ alloy Kovar, and Cu-based alloy phosphorous copper (CA501), Cu-Fe-Zn-1P ( c A 194) alloy, Cu-Fe-Co-Sn-P (CA195) alloy, etc. are used.
• aluminum alloy is known as an inexpensive conductive material.
• aluminum alloy is considered to be unable to fully satisfy the characteristics required for the above-described lead frame and the like.
• the reality is that lead alloys made of aluminum alloy have not been put into practical use.
• the present invention has been made on the basis of the above circumstances, and has a good softening property and good electrical conductivity, ripening conductivity (ripening property), better solderability, plating property, and high mechanical strength.
• a repeated bending resistance has, moreover it is also an object to provide an electronic ⁇ electrical equipment conductive component material consisting cheap i aluminum based alloys 0
• the present inventors have made a study on aluminum-based alloys that can satisfy the properties required for materials used in conductive parts of electronic and electrical equipment such as lead frames as described above. He found that the religious grace could be used to improve the characteristics of the game, and thus led to the invention.
• the conductive component material for electronic and electrical equipment according to the second aspect of the present invention contains Mg Madane 1) -u% (weight%, the same applies hereinafter) and Si (silicon) 0.2-2.0%. The rest is A (aluminum) and the inevitable impure union.
• the conductive material for electronic / electric equipment of the second invention includes Mg and S i specified in the first invention, and furthermore, Cu (copper) 0.01 to 3.0%, Zn (zinc) Contains one or two of 0.01 to 3.0?
• the conductive component material of the third aspect of the present invention further includes: VI ⁇
• the conductive material for electronic and electrical equipment according to the fourth invention includes, in addition to the Mg and Si specified in the first invention, one or two of Cu and Zn specified in the second invention, and the third invention. It contains ⁇ ⁇ ⁇ or two or more of the specified M n, C “, Z”, V, i.
• V1 g is an element that forms a precipitate by coexisting with S ⁇ ⁇ and contributes to strength improvement, and is necessary for obtaining strength and repetitive bending resistance required for components such as a lead frame.
• Mg was set within the range of 0.2 to 3.0%.
• Si is an element that forms precipitates when coexisting with Mg and contributes to strength improvement. Similarly to Mg, Si is an element necessary for obtaining the strength necessary for parts such as lead frames, etc. It is. However,
• S i was in the range of 0.2 to 2.096.
• the aluminum alloy as a conductive component material of the electronic / electric device of the present invention basically has the above Mg and Si.
• the second and fourth inventions further contain one or two of Cu and Z ⁇ . ' ⁇ ⁇ ⁇ ⁇ M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M
• Cu further improves plating and soldering properties It is an effective element for causing If Cu is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.0%, the corrosion resistance decreases. Therefore, Cu was set in the range of 0.01 to 3.0%. In addition, CU is preferably contained in this range exceeding 0.59 particularly from the viewpoint of improving the solderability and the solderability. Z n:
• Zn is also an effective element for further improving the plating properties and solderability. If Zn is less than 0.01%, the effect cannot be sufficiently obtained, while if it exceeds 3.096, the corrosion resistance decreases. Therefore, Zn was set in the range of 0.01 to .3.0? / 0 .
• VI n is an element effective for refining the recrystallized grains during the intermediate annealing (during the solution treatment) to further improve the strength and heat resistance (softening resistance): M n is 0.01 These effects cannot be obtained sufficiently at 96 germs, and even if the content exceeds 103.0%, the effects of improving strength and heat resistance are saturated, and a large compound is easily produced during production. M 0.01 is 0.01 to 3.0
• G also refines the recrystallized grains during intermediate annealing (during solution treatment) to further improve strength and heat resistance. It is an effective element. If C is less than%, these effects cannot be obtained sufficiently. On the other hand, if the content is increased up to 0.30%, the effects of improving strength and heat resistance are saturated, and a huge compound may be produced during production. Easy to generate. 5 Therefore, C "was set within the range of 01 to 0.30 96, Z":
• Z "3 ⁇ 4 is an element effective for refining recrystallized grains, improving strength, and improving heat resistance.
• Z is less than 0.01%,-:: Harana; Not obtained, — ⁇ 0.% 3 ⁇ 4- Even if the content exceeds 0, the effect of improving strength and heat resistance is saturated, and it becomes easy to form a huge compound at the time of fabrication. Therefore, ⁇ was set within the range of 0.01 to Q.30%.
• V is an element effective for improvement. If V is less than 0.01%, these effects cannot be sufficiently obtained. On the other hand, if the content exceeds 0.30%, the effect of improving the strength and heat resistance can be reduced by m, and a condensed tube compound is produced. From 0, which is easy, V is limited to the range of 0.01 to 0.30.
• Ni is set in the range of 0.01 to 5.7%.
• a and unavoidable impurities are Utogura.
• Fe is usually contained as an unavoidable impurity, but if Fe is about 0.60% or less, there is no particular problem as a material for conductive parts of electronic and electrical equipment such as lead frame materials, etc., which is the subject of the present invention.
• Ti titanium
• Ti and B boron
• Be is optionally added for the purpose of preventing the oxidation of the molten metal or improving the rollability.
• Be may be added in the case of the material of the present invention, if necessary.
• the electronic component of the present invention having the above-described component composition ro Equipment materials are .7 and 7 Lumini :: Mu: base alloys, so they are much cheaper and more excellent than conventional 42 alloys, Kovar or CU-based materials. It has chipping properties, good electrical conductivity, good conductivity, heat dissipation, and also has good solderability, plating properties, high mechanical strength, and good bending properties. In addition, it is the lightest lightning as a material for conductive parts of electronic and electrical equipment such as ICs, semiconductor lead frame materials, switches and connectors that require these characteristics.
• the material of the present invention is used as a lead frame especially when wire bonding is performed with an AI wire in a lead frame material, Au plating or Ag can be applied to the semiconductor element mounting portion connection portion. There is no need to apply plating, etc., and there is a merit in that, as it is, wire die squid is scattered as H., which can further reduce the cost of semiconductor device production.
• a molten aluminum-based alloy having the above-described composition is prepared according to a conventional method.
• This construction method and uX are based on the rod gun construction method (the construction method-fishing), but from the viewpoint of energy saving and improvement of softening resistance, the thin plate continuous construction method (continuous construction rolling method) is applied. Is also good.
• the obtained ingot is subjected to a soaking process (homogenizing process) and a hot rolling process, and if necessary, a cold rolling process, an intermediate annealing process (solution treatment process), and a final cold rolling process.
• a soaking process homogenizing process
• a hot rolling process if necessary, a cold rolling process, an intermediate annealing process (solution treatment process), and a final cold rolling process.
• Rolled plate of about 0.1 to 0.5 Fiber in the case of continuous thin plate manufacturing, the steps up to hot rolling among these steps can be omitted.
• the uniform heat treatment may be performed at a temperature of 450 to 600 ° C. within a period of time.
• the soaking temperature is 450 ° C
• the ripening rollability decreases, while when the soaking temperature exceeds 600 C, eutectic melting tends to occur.
• the steel sheet is usually re-ripened and then subjected to hot rolling.
• This reheating is carried out at 400 to 550 ° C according to a conventional method, and the forging is also performed at 40 to 550 ° C. You can do it in C. Note that it is not necessary to separately perform the soaking treatment (homogenization treatment) and the heat treatment for the hot rolling as described above. And then hot rolling ⁇ ⁇ is good.
• ra annealing is for pre-solidifying Ig and Si in order to give age hardenability by Mg and SI, and is a solution treatment of general JIS 6000 series alloy. What is necessary is just to carry out on the conditions according to conditions. In other words, the annealing temperature is set to 48G to 560 ° C, and although it varies depending on the sheet thickness, the annealing temperature is maintained within 1 hour, and the cooling rate rc
• the strength of the final rolled plate must be at least 30k5fZ at a whip strength of 0 and at least 25l3 ⁇ 4fZM at proof strength, and the aluminum base alloy of the present invention. , Cold pressure, after rolling) dE ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ . If the above strength can be secured, the final strength is required to further improve the cyclic bending resistance. After cold rolling, final annealing may be performed at 10 (TC or more.
• the alloys of the present invention and the comparative alloys shown in Table 1 were produced by a normal semi-continuous production process or a continuous sheet production process (continuous production rolling).
• the semi-continuously manufactured ingot is beveled on each side to a thickness of 3 ⁇ 400., A width of 1 000 ⁇ , and a length of 3500.
• the production conditions shown in Table 2 A 30 mm thick rolled plate was used. In the case of continuous production, the thickness of the forged plate was 4 mm, and the rolled plate had a thickness of 0.30 mm under the manufacturing conditions shown in 4 or to.
• the rolled aluminum alloy sheets were examined for mechanical properties, softening resistance, electrical conductivity, plating properties, and solderability. Table 3 shows the results.
• the inert gas layer is heat treated at 200 to 30 (TC for several seconds. Heat treatment was performed for 5 minutes, and the tensile strength after the heat treatment was measured.
• the rolled plate was coated with a zinc alloy to determine the solderability and the solderability.
• the distribution of ⁇ on the zincate treated surface was observed with an optical microscope, and the distribution of ⁇ ⁇ was evaluated as ⁇ , ⁇ , X in a uniform order. If it is more than ⁇ , it is judged to be bad. Note that the ⁇ condition processing of ⁇ is as follows.
• the repeatability was measured by measuring the number of reciprocations of a 0.30 mm rolled material 90 ° one way. There is no problem in performance if the repetitive bendability is 5 times or more. No. ⁇
• a batch-type industrial-scale annealing furnace that has a water tank below the furnace and can perform water quenching.
• the aluminum-based alloy as a conductive material for electronic and electrical equipment according to the present invention has sufficient strength with a rolled material having a tensile strength of 30 l ⁇ f Z 2 or more.
• a tensile strength of 3 Q! 3 ⁇ 4f / or more can be secured even after aging at 250 ° C for 5 minutes, so that the heat resistance is good, and the wire bending bendability is good, and the conductivity is good.
• This poison electric power is much cheaper than conventional 42 alloy, Kovar or CU material, and has excellent softening resistance and good electrical conductivity. It has good conductivity, heat dissipation, and good repellency, good mechanical properties, high mechanical strength, and good repetitive bending properties.
• ICs, LSIs, SCRs, and other conductors that are required. These are suitable as materials for conductive parts of electronic and electrical equipment, such as switches and connectors.
• wire If the material of the present invention is used as a lead frame when bonding is performed using the A-line, there is no need to apply Au plating or Ag plating to the semiconductor element mounting portion and wire connection portion, and wire bonding can be performed as it is. This makes it possible to further reduce the cost of manufacturing semiconductor devices.

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• 1986
  • 1986-10-01 JP JP61233454A patent/JPS6389640A/ja active Pending
• 1987
  • 1987-09-30 WO PCT/JP1987/000717 patent/WO1988002411A1/ja unknown
  • 1987-09-30 KR KR1019880700616A patent/KR950013291B1/ko not_active IP Right Cessation

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