US8506718B2 - Polymer removing apparatus and method - Google Patents

Polymer removing apparatus and method Download PDF

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Publication number
US8506718B2
US8506718B2 US12/857,938 US85793810A US8506718B2 US 8506718 B2 US8506718 B2 US 8506718B2 US 85793810 A US85793810 A US 85793810A US 8506718 B2 US8506718 B2 US 8506718B2
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United States
Prior art keywords
target substrate
polymer
gas
peripheral portion
removing apparatus
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Expired - Fee Related, expires
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US12/857,938
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English (en)
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US20110041874A1 (en
Inventor
Takehiro SHINDOU
Masaki Kondo
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to US12/857,938 priority Critical patent/US8506718B2/en
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KONDO, MASAKI, SHINDOU, TAKEHIRO
Publication of US20110041874A1 publication Critical patent/US20110041874A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • H01L21/31138Etching organic layers by chemical means by dry-etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02082Cleaning product to be cleaned
    • H01L21/0209Cleaning of wafer backside
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Definitions

  • the present invention relates to a polymer removing apparatus and method for removing polymers annularly adhered to a peripheral portion of a substrate.
  • BSP Bevel/Backside Polymer
  • spotted laser light is irradiated on a target substrate. Accordingly, the laser light is made to irradiate onto the BSP circumferentially formed at a peripheral portion of a target substrate while varying a laser irradiation position on the target substrate by rotating the target substrate.
  • the present invention provides a polymer removing apparatus and method capable of removing polymer annularly adhered to a peripheral portion of a target substrate with a high throughput while preventing generation of particles due to rotation of the target substrate and peeling of the polymers due to heat stress.
  • a polymer removing apparatus for removing polymer annularly adhered to a peripheral portion of a target substrate, the apparatus including: a processing chamber for accommodating the target substrate having the polymer annularly adhered to the peripheral portion thereof; a mounting table for mounting the target substrate thereon; a laser irradiation unit for irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate; an ozone gas supply unit for supplying an ozone gas to the polymer annularly adhered to the target substrate; and a gas exhaust unit for exhausting the ozone gas.
  • a polymer removing method for removing polymer annularly adhered to a peripheral portion of a target substrate including: mounting the target substrate having the polymer annularly adhered to the peripheral portion thereof on a mounting table; irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate; and supplying an ozone gas to the polymer annularly adhered to the target substrate while the laser light is irradiated.
  • FIG. 1 is a cross sectional view showing a polymer removing apparatus in accordance with an embodiment of the present invention
  • FIG. 2 illustrates a structure of a laser irradiation unit provided in the polymer removing apparatus shown in FIG. 1 to emit ring-shaped laser light;
  • FIG. 3 illustrates a cross sectional view showing a polymer removing apparatus in accordance with another embodiment of the present invention
  • FIG. 4 is a cross sectional view showing a modification example of the polymer removing apparatus shown in FIG. 3 ;
  • FIG. 5 is a cross sectional view for explaining another arrangement example of the laser irradiation unit.
  • the polymer removing apparatus 1 in FIG. 1 includes a chamber 11 accommodating therein a semiconductor wafer W serving as a target substrate, the wafer W having a BSP 2 annularly (circumferentially) adhered to a peripheral portion thereof.
  • a mounting table 12 having a substantially cylindrical shape, on which the wafer W is horizontally mounted, is provided at a bottom portion of the chamber 11 .
  • the mounting table 12 has a mounting surface 12 a for mounting thereon a portion of the wafer W excluding its peripheral portion.
  • the mounting table 12 has an adsorption opening 13 leading to the mounting surface 12 a , and a vacuum pump 14 is connected to the adsorption opening 13 .
  • the wafer W is vacuum-adsorbed to the mounting surface 12 a by operating the vacuum pump 14 . That is, the mounting table 12 serves as a vacuum chuck.
  • a taper portion 12 b is formed at an upper peripheral portion of the mounting table 12 corresponding to the peripheral portion of the wafer W.
  • the taper portion 12 b is provided with ozone gas injection openings 15 for discharging an ozone gas to the peripheral portion of the wafer W to which the BSP 2 adheres.
  • the ozone gas injection openings 15 are arranged circumferentially about the common center.
  • the ozone gas injection openings 15 are connected to a disc-shaped gas diffusion space 16 formed inside the mounting table 12 .
  • the gas diffusion space 16 is connected to a gas channel 17 extending from a bottom portion of the mounting table 12 .
  • the gas channel 17 is connected to a gas supply line 18 , and the gas supply line 18 is connected to an ozone gas supply source 19 disposed outside the chamber 11 .
  • An ozone gas supplied from the ozone gas supply source 19 reaches the gas diffusion space 16 through the gas supply line 18 and the gas channel 17 .
  • the ozone gas is supplied from the gas diffusion space 16 to the peripheral portion of the wafer W with the BSP 2 adhered thereto through the ozone gas injection openings 15 .
  • a laser irradiation head 20 serving as a laser irradiation unit to emit a ring-shaped laser light L is provided at a position corresponding to the center of the mounting table 12 at an upper portion of the chamber 11 .
  • the laser irradiation head 20 is supported by a supporting member 21 in the chamber 11 .
  • the laser irradiation head 20 includes a laser light source 31 and an optical system 32 as shown in FIG. 2 .
  • the optical system 32 includes a curved surface lens 33 having the a cross section of a convex lens shape to annularly collect collimated light emitted from the laser light source 31 , a ring-shaped cylindrical lens 34 for converting the annularly collected laser light into a ring-shaped collimated light, and a concave lens 35 for radially spreading the ring-shaped collimated light.
  • a unit for irradiating the ring-shaped laser light is described, e.g., in FIG. 10 of Japanese Patent Application Publication No. 2006-229075.
  • the ring-shaped laser light L emitted from the laser irradiation head 20 is radially spread to pass through an area outside the peripheral portion of the wafer W.
  • An irradiation position of the laser light emitted from the laser irradiation head 20 can be detected by using a CCD camera or a light sensor receiving reflection light. Further, a position of the laser irradiation head 20 can be adjusted such that the irradiation position can be adjusted based on the position detection information.
  • a bowl-shaped cylindrical mirror member 22 having a mirror surface (reflection surface) 22 a at an upper surface thereof is provided outside the mounting table 12 to surround the mounting table 12 .
  • the mirror member 22 functions as a reflection member for reflecting the laser light.
  • the mirror surface (reflection surface) 22 a of the mirror member 22 reflects the ring-shaped laser light irradiated from the laser irradiation head 20 such that the reflected light is directed to the BSP 2 of the peripheral portion of the wafer W.
  • the ring-shaped laser light L emitted from the laser irradiation head 20 is irradiated onto the whole BSP 2 of the peripheral portion of the wafer W at once via the mirror member 22 .
  • a gas exhaust unit 23 for exhausting an ozone gas is provided outside the wafer W mounted on the mounting table and the mirror member 22 to surround them.
  • the gas exhaust unit 23 includes a gas inlet port 23 a formed circumferentially outside the wafer W and an annular gas exhaust path 23 b through which an exhaust gas from the gas inlet port 23 a is transferred to a bottom portion of the chamber 11 . Further, at the bottom portion of the chamber 11 , the gas exhaust path 23 b is connected to gas exhaust lines 24 .
  • the gas exhaust lines 24 are connected to acid exhaust lines (not shown) of a factory such that, mainly, an ozone gas supplied to the peripheral portion of the wafer W is suction-exhausted by acid exhaust system (not shown) of the factory through the gas exhaust unit 23 and the gas exhaust lines 24 .
  • a fan 25 for introducing air into the chamber 11 by suction and a filter 26 for removing particles from the air suctioned by the fan 25 . Accordingly, a downflow of clean air is formed in the chamber 11 .
  • a wafer loading/unloading port 27 is provided at a sidewall of the chamber 11 .
  • the wafer loading/unloading port 27 can be opened and closed by a gate valve 28 .
  • the gate valve 28 is opened and lifter pins (not shown), which are provided in the mounting table 12 to be protruded from and retracted into the mounting table 12 , are protruded from the mounting table 12 . Then, the wafer W is loaded to or unloaded from the lifter pins by a transfer arm (not shown).
  • the polymer removing apparatus 1 further includes a controller 40 .
  • the controller 40 has a microprocessor and mainly controls various parts of the polymer removing apparatus 1 .
  • the gate valve 28 is opened first and the wafer W is loaded into the chamber 11 by the transfer arm through the wafer loading/unloading port 27 and is vacuum attracted to the mounting table 12 . Then, the gate valve 28 is closed and the chamber 11 is airtightly sealed.
  • the ring-shaped laser light L is emitted from the laser irradiation head 20 and is reflected by the mirror surface (reflection surface) 22 a of the mirror member 22 . Accordingly, the whole BSP 2 of the peripheral portion of the wafer W is simultaneously irradiated by the ring-shaped laser light L.
  • an ozone gas is injected to the BSP 2 from the ozone gas injection openings 15 . Consequently, the BSP 2 is removed by heat due to laser irradiation and oxidation due to the ozone gas.
  • the supplied ozone gas is suction-exhausted by acid exhaust system (not shown) of the factory through the gas exhaust unit 23 and the gas exhaust lines 24 . In this case, the position of the laser irradiation head 20 can be adjusted to irradiate the laser light to a desired position.
  • spotted laser light is irradiated on a target substrate. Accordingly, the laser light is made to irradiate onto the BSP circumferentially formed at a peripheral portion of a target substrate while varying a laser irradiation position on the wafer W by rotating the wafer W.
  • a laser spot area is small, the time required for a BSP removing process is lengthened and a throughput of the BSP removing process is low.
  • particles may be generated due to disturbance in the atmosphere caused by high rotation and peeling of the BSP may occur by heat stress due to rapid heating and cooling at the laser irradiation position.
  • the laser irradiation head 20 emits the ring-shaped laser light L, so that the laser light can be irradiated at once onto the whole BSP 2 circumferentially formed at the peripheral portion of the wafer W. Accordingly, it is possible to considerably increase a throughput compared to the conventional case of using the spotted laser light. Therefore, the laser light source 31 of the laser irradiation head 20 may have a low output level to gradually heat and cool an irradiation portion without reducing a throughput. Further, it is possible to decrease heat stress while securing a high throughput and prevent peeling of the BSP 2 . Moreover, since there is no need to rotate the wafer W, disturbance in the atmosphere does not occur during the process, thereby suppressing particle generation.
  • the ozone gas injection openings 15 are provided in a circumferential direction of the mounting table 12 , and thus an ozone gas can be supplied from the ozone gas injection openings 15 to the whole BSP 2 circumferentially formed at the peripheral portion of the wafer W. Accordingly, the BSP 2 can be quickly removed by cooperation of the ring-shaped laser light and the ozone gas. Further, since the gas inlet port 23 a of the gas exhaust unit 23 is formed circumferentially outside the wafer W, the ozone gas that has contributed to the BSP removal reaction can be efficiently exhausted via the gas exhaust unit 23 .
  • FIG. 3 illustrates a cross sectional view showing a polymer removing apparatus in accordance with another embodiment of the present invention.
  • a polymer removing apparatus 1 ′ shown in FIG. 3 is configured such that a cooling unit is added to the polymer removing apparatus 1 of the FIG. 1 .
  • like reference numerals will be given to like parts as those of FIG. 1 , and redundant description thereof will be omitted.
  • a wafer cooling unit 50 includes a cooling gas supply head 51 provided above the laser irradiation head 20 and a cooling gas supply source 53 connected to the cooling gas supply head 51 via a line 52 to supply a cooling gas.
  • the cooling gas supply head 51 is provided with injection nozzles 54 .
  • the cooling gas supplied from the cooling gas supply source 53 to the cooling gas supply head 51 through the line 52 is injected to the wafer W through the injection nozzles 54 . Accordingly, the surface of the wafer W is cooled to thereby avoid bad influence caused by the temperature increase of the device.
  • FIG. 4 shows a modification example of the apparatus shown in FIG. 3 , which includes a wafer cooling unit 50 ′ having a configuration different from that of the cooling unit 50 shown in FIG. 3 .
  • the wafer cooling unit 50 ′ includes injection nozzles 56 arranged above the gas exhaust unit 23 along the substantially cylindrical gas exhaust unit 23 to inject a cooling gas to the wafer W, a connection line 57 for connecting the ends of the injection nozzles 56 with one another, and a cooling gas supply source 59 connected to the connection line 57 via a line 58 .
  • the cooling gas supplied from the cooling gas supply source 59 through the line 58 and the connection line 57 is injected to the wafer W through the injection nozzles 56 . In this manner, the surface of the wafer W can be also cooled.
  • a clean cooling gas instead of the air by the fan 25 may be introduced. Accordingly, a downflow of cooling gas is formed in the chamber 11 , thereby cooling the surface of the wafer W.
  • the laser irradiation head (laser irradiation unit) is arranged above the wafer in the above embodiments, it is not limited thereto.
  • a hollow mounting table 12 ′ having a ring-shaped laser transmission window 70 at a position corresponding to the peripheral portion of the wafer W can be provided and a laser irradiation unit 20 ′ is provided inside the mounting table 12 ′, so that ring-shaped laser light can be irradiated onto the BSP 2 of the peripheral portion of the wafer W without using the mirror member (reflection member) 22 .
  • an ozone gas supply unit and a gas exhaust unit are not shown in FIG. 5 for simplicity, ozone gas injection nozzles arranged below and outside the circumferential BSP 2 may be used as the ozone gas supply unit, and the gas exhaust unit shown in FIG. 1 may be used.
  • the present invention can be applied to various cases for removing polymers formed at a peripheral portion of a target substrate.
  • a semiconductor wafer is used as a target substrate in the above embodiments, other substrates may be used without being limited thereto.
  • ring-shaped laser light can be irradiated at once to whole polymer annularly adhered to a target substrate placed on the mounting table. Accordingly, it is possible to considerably increase a throughput compared to a conventional case of using a spotted laser light. Therefore, the laser light source of the laser irradiation unit may have a low output level to gradually heat and cool an irradiation portion without reducing a throughput. Further, it is possible to decrease heat stress while securing a high throughput and prevent peeling of the polymers. Moreover, since there is no need to rotate the target substrate, disturbance in the atmosphere does not occur during the process, thereby suppressing particle generation.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
US12/857,938 2009-08-18 2010-08-17 Polymer removing apparatus and method Expired - Fee Related US8506718B2 (en)

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Application Number Priority Date Filing Date Title
US12/857,938 US8506718B2 (en) 2009-08-18 2010-08-17 Polymer removing apparatus and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009189105A JP5478145B2 (ja) 2009-08-18 2009-08-18 ポリマー除去装置およびポリマー除去方法
JP2009-189105 2009-08-18
US24264609P 2009-09-15 2009-09-15
US12/857,938 US8506718B2 (en) 2009-08-18 2010-08-17 Polymer removing apparatus and method

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US20110041874A1 US20110041874A1 (en) 2011-02-24
US8506718B2 true US8506718B2 (en) 2013-08-13

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JP (1) JP5478145B2 (zh)
KR (1) KR101647155B1 (zh)
CN (1) CN101996865B (zh)
TW (1) TWI520200B (zh)

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US11087996B2 (en) 2018-09-10 2021-08-10 Samsung Electronics Co., Ltd. Dry cleaning apparatus and dry cleaning method

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JP5712700B2 (ja) * 2011-03-14 2015-05-07 ウシオ電機株式会社 レーザリフトオフ装置
US8759977B2 (en) 2012-04-30 2014-06-24 International Business Machines Corporation Elongated via structures
CN104941957B (zh) * 2014-03-24 2018-01-12 睿励科学仪器(上海)有限公司 晶圆清洁装置及方法
JP6355537B2 (ja) * 2014-12-02 2018-07-11 株式会社Screenホールディングス 基板処理装置および基板処理方法
JP2016115738A (ja) * 2014-12-12 2016-06-23 東京エレクトロン株式会社 エッチング処理方法及びベベルエッチング装置
WO2017109928A1 (ja) * 2015-12-25 2017-06-29 ギガフォトン株式会社 レーザ照射装置
KR101900283B1 (ko) * 2016-03-03 2018-11-05 에이피시스템 주식회사 레이저 리프트 오프 장비
JP6999264B2 (ja) * 2016-08-04 2022-01-18 株式会社日本製鋼所 レーザ剥離装置、レーザ剥離方法、及び有機elディスプレイの製造方法
WO2018025495A1 (ja) * 2016-08-04 2018-02-08 株式会社日本製鋼所 レーザ剥離装置、レーザ剥離方法、及び有機elディスプレイの製造方法
KR20180024381A (ko) * 2016-08-30 2018-03-08 세메스 주식회사 분진 집진용 장치 및 이를 포함하는 레이저 가공 장치
CN106735888A (zh) * 2016-12-07 2017-05-31 深圳市海目星激光科技有限公司 一种臭氧辅助切割装置及方法
US10002771B1 (en) * 2017-10-10 2018-06-19 Applied Materials, Inc. Methods for chemical mechanical polishing (CMP) processing with ozone
KR102000639B1 (ko) * 2019-04-22 2019-07-17 세메스 주식회사 분진 집진용 장치 및 이를 포함하는 레이저 가공 장치
KR102312866B1 (ko) * 2019-12-13 2021-10-14 세메스 주식회사 박막 식각 장치
KR102624578B1 (ko) * 2020-09-14 2024-01-15 세메스 주식회사 기판 처리 설비 및 기판 처리 방법

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
US11087996B2 (en) 2018-09-10 2021-08-10 Samsung Electronics Co., Ltd. Dry cleaning apparatus and dry cleaning method
US11742221B2 (en) 2018-09-10 2023-08-29 Samsung Electronics Co., Ltd. Dry cleaning apparatus and dry cleaning method

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KR101647155B1 (ko) 2016-08-09
JP2011040670A (ja) 2011-02-24
US20110041874A1 (en) 2011-02-24
KR20110018843A (ko) 2011-02-24
CN101996865B (zh) 2012-10-10
CN101996865A (zh) 2011-03-30
JP5478145B2 (ja) 2014-04-23
TWI520200B (zh) 2016-02-01
TW201120951A (en) 2011-06-16

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