US8506718B2 - Polymer removing apparatus and method - Google Patents
Polymer removing apparatus and method Download PDFInfo
- Publication number
- US8506718B2 US8506718B2 US12/857,938 US85793810A US8506718B2 US 8506718 B2 US8506718 B2 US 8506718B2 US 85793810 A US85793810 A US 85793810A US 8506718 B2 US8506718 B2 US 8506718B2
- Authority
- US
- United States
- Prior art keywords
- target substrate
- polymer
- gas
- peripheral portion
- removing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 55
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 43
- 230000002093 peripheral effect Effects 0.000 claims abstract description 41
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 87
- 239000000112 cooling gas Substances 0.000 claims description 20
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 description 8
- 230000008642 heat stress Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002253 acid Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Definitions
- the present invention relates to a polymer removing apparatus and method for removing polymers annularly adhered to a peripheral portion of a substrate.
- BSP Bevel/Backside Polymer
- spotted laser light is irradiated on a target substrate. Accordingly, the laser light is made to irradiate onto the BSP circumferentially formed at a peripheral portion of a target substrate while varying a laser irradiation position on the target substrate by rotating the target substrate.
- the present invention provides a polymer removing apparatus and method capable of removing polymer annularly adhered to a peripheral portion of a target substrate with a high throughput while preventing generation of particles due to rotation of the target substrate and peeling of the polymers due to heat stress.
- a polymer removing apparatus for removing polymer annularly adhered to a peripheral portion of a target substrate, the apparatus including: a processing chamber for accommodating the target substrate having the polymer annularly adhered to the peripheral portion thereof; a mounting table for mounting the target substrate thereon; a laser irradiation unit for irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate; an ozone gas supply unit for supplying an ozone gas to the polymer annularly adhered to the target substrate; and a gas exhaust unit for exhausting the ozone gas.
- a polymer removing method for removing polymer annularly adhered to a peripheral portion of a target substrate including: mounting the target substrate having the polymer annularly adhered to the peripheral portion thereof on a mounting table; irradiating ring-shaped laser light at once to the whole polymer annularly adhered to the target substrate; and supplying an ozone gas to the polymer annularly adhered to the target substrate while the laser light is irradiated.
- FIG. 1 is a cross sectional view showing a polymer removing apparatus in accordance with an embodiment of the present invention
- FIG. 2 illustrates a structure of a laser irradiation unit provided in the polymer removing apparatus shown in FIG. 1 to emit ring-shaped laser light;
- FIG. 3 illustrates a cross sectional view showing a polymer removing apparatus in accordance with another embodiment of the present invention
- FIG. 4 is a cross sectional view showing a modification example of the polymer removing apparatus shown in FIG. 3 ;
- FIG. 5 is a cross sectional view for explaining another arrangement example of the laser irradiation unit.
- the polymer removing apparatus 1 in FIG. 1 includes a chamber 11 accommodating therein a semiconductor wafer W serving as a target substrate, the wafer W having a BSP 2 annularly (circumferentially) adhered to a peripheral portion thereof.
- a mounting table 12 having a substantially cylindrical shape, on which the wafer W is horizontally mounted, is provided at a bottom portion of the chamber 11 .
- the mounting table 12 has a mounting surface 12 a for mounting thereon a portion of the wafer W excluding its peripheral portion.
- the mounting table 12 has an adsorption opening 13 leading to the mounting surface 12 a , and a vacuum pump 14 is connected to the adsorption opening 13 .
- the wafer W is vacuum-adsorbed to the mounting surface 12 a by operating the vacuum pump 14 . That is, the mounting table 12 serves as a vacuum chuck.
- a taper portion 12 b is formed at an upper peripheral portion of the mounting table 12 corresponding to the peripheral portion of the wafer W.
- the taper portion 12 b is provided with ozone gas injection openings 15 for discharging an ozone gas to the peripheral portion of the wafer W to which the BSP 2 adheres.
- the ozone gas injection openings 15 are arranged circumferentially about the common center.
- the ozone gas injection openings 15 are connected to a disc-shaped gas diffusion space 16 formed inside the mounting table 12 .
- the gas diffusion space 16 is connected to a gas channel 17 extending from a bottom portion of the mounting table 12 .
- the gas channel 17 is connected to a gas supply line 18 , and the gas supply line 18 is connected to an ozone gas supply source 19 disposed outside the chamber 11 .
- An ozone gas supplied from the ozone gas supply source 19 reaches the gas diffusion space 16 through the gas supply line 18 and the gas channel 17 .
- the ozone gas is supplied from the gas diffusion space 16 to the peripheral portion of the wafer W with the BSP 2 adhered thereto through the ozone gas injection openings 15 .
- a laser irradiation head 20 serving as a laser irradiation unit to emit a ring-shaped laser light L is provided at a position corresponding to the center of the mounting table 12 at an upper portion of the chamber 11 .
- the laser irradiation head 20 is supported by a supporting member 21 in the chamber 11 .
- the laser irradiation head 20 includes a laser light source 31 and an optical system 32 as shown in FIG. 2 .
- the optical system 32 includes a curved surface lens 33 having the a cross section of a convex lens shape to annularly collect collimated light emitted from the laser light source 31 , a ring-shaped cylindrical lens 34 for converting the annularly collected laser light into a ring-shaped collimated light, and a concave lens 35 for radially spreading the ring-shaped collimated light.
- a unit for irradiating the ring-shaped laser light is described, e.g., in FIG. 10 of Japanese Patent Application Publication No. 2006-229075.
- the ring-shaped laser light L emitted from the laser irradiation head 20 is radially spread to pass through an area outside the peripheral portion of the wafer W.
- An irradiation position of the laser light emitted from the laser irradiation head 20 can be detected by using a CCD camera or a light sensor receiving reflection light. Further, a position of the laser irradiation head 20 can be adjusted such that the irradiation position can be adjusted based on the position detection information.
- a bowl-shaped cylindrical mirror member 22 having a mirror surface (reflection surface) 22 a at an upper surface thereof is provided outside the mounting table 12 to surround the mounting table 12 .
- the mirror member 22 functions as a reflection member for reflecting the laser light.
- the mirror surface (reflection surface) 22 a of the mirror member 22 reflects the ring-shaped laser light irradiated from the laser irradiation head 20 such that the reflected light is directed to the BSP 2 of the peripheral portion of the wafer W.
- the ring-shaped laser light L emitted from the laser irradiation head 20 is irradiated onto the whole BSP 2 of the peripheral portion of the wafer W at once via the mirror member 22 .
- a gas exhaust unit 23 for exhausting an ozone gas is provided outside the wafer W mounted on the mounting table and the mirror member 22 to surround them.
- the gas exhaust unit 23 includes a gas inlet port 23 a formed circumferentially outside the wafer W and an annular gas exhaust path 23 b through which an exhaust gas from the gas inlet port 23 a is transferred to a bottom portion of the chamber 11 . Further, at the bottom portion of the chamber 11 , the gas exhaust path 23 b is connected to gas exhaust lines 24 .
- the gas exhaust lines 24 are connected to acid exhaust lines (not shown) of a factory such that, mainly, an ozone gas supplied to the peripheral portion of the wafer W is suction-exhausted by acid exhaust system (not shown) of the factory through the gas exhaust unit 23 and the gas exhaust lines 24 .
- a fan 25 for introducing air into the chamber 11 by suction and a filter 26 for removing particles from the air suctioned by the fan 25 . Accordingly, a downflow of clean air is formed in the chamber 11 .
- a wafer loading/unloading port 27 is provided at a sidewall of the chamber 11 .
- the wafer loading/unloading port 27 can be opened and closed by a gate valve 28 .
- the gate valve 28 is opened and lifter pins (not shown), which are provided in the mounting table 12 to be protruded from and retracted into the mounting table 12 , are protruded from the mounting table 12 . Then, the wafer W is loaded to or unloaded from the lifter pins by a transfer arm (not shown).
- the polymer removing apparatus 1 further includes a controller 40 .
- the controller 40 has a microprocessor and mainly controls various parts of the polymer removing apparatus 1 .
- the gate valve 28 is opened first and the wafer W is loaded into the chamber 11 by the transfer arm through the wafer loading/unloading port 27 and is vacuum attracted to the mounting table 12 . Then, the gate valve 28 is closed and the chamber 11 is airtightly sealed.
- the ring-shaped laser light L is emitted from the laser irradiation head 20 and is reflected by the mirror surface (reflection surface) 22 a of the mirror member 22 . Accordingly, the whole BSP 2 of the peripheral portion of the wafer W is simultaneously irradiated by the ring-shaped laser light L.
- an ozone gas is injected to the BSP 2 from the ozone gas injection openings 15 . Consequently, the BSP 2 is removed by heat due to laser irradiation and oxidation due to the ozone gas.
- the supplied ozone gas is suction-exhausted by acid exhaust system (not shown) of the factory through the gas exhaust unit 23 and the gas exhaust lines 24 . In this case, the position of the laser irradiation head 20 can be adjusted to irradiate the laser light to a desired position.
- spotted laser light is irradiated on a target substrate. Accordingly, the laser light is made to irradiate onto the BSP circumferentially formed at a peripheral portion of a target substrate while varying a laser irradiation position on the wafer W by rotating the wafer W.
- a laser spot area is small, the time required for a BSP removing process is lengthened and a throughput of the BSP removing process is low.
- particles may be generated due to disturbance in the atmosphere caused by high rotation and peeling of the BSP may occur by heat stress due to rapid heating and cooling at the laser irradiation position.
- the laser irradiation head 20 emits the ring-shaped laser light L, so that the laser light can be irradiated at once onto the whole BSP 2 circumferentially formed at the peripheral portion of the wafer W. Accordingly, it is possible to considerably increase a throughput compared to the conventional case of using the spotted laser light. Therefore, the laser light source 31 of the laser irradiation head 20 may have a low output level to gradually heat and cool an irradiation portion without reducing a throughput. Further, it is possible to decrease heat stress while securing a high throughput and prevent peeling of the BSP 2 . Moreover, since there is no need to rotate the wafer W, disturbance in the atmosphere does not occur during the process, thereby suppressing particle generation.
- the ozone gas injection openings 15 are provided in a circumferential direction of the mounting table 12 , and thus an ozone gas can be supplied from the ozone gas injection openings 15 to the whole BSP 2 circumferentially formed at the peripheral portion of the wafer W. Accordingly, the BSP 2 can be quickly removed by cooperation of the ring-shaped laser light and the ozone gas. Further, since the gas inlet port 23 a of the gas exhaust unit 23 is formed circumferentially outside the wafer W, the ozone gas that has contributed to the BSP removal reaction can be efficiently exhausted via the gas exhaust unit 23 .
- FIG. 3 illustrates a cross sectional view showing a polymer removing apparatus in accordance with another embodiment of the present invention.
- a polymer removing apparatus 1 ′ shown in FIG. 3 is configured such that a cooling unit is added to the polymer removing apparatus 1 of the FIG. 1 .
- like reference numerals will be given to like parts as those of FIG. 1 , and redundant description thereof will be omitted.
- a wafer cooling unit 50 includes a cooling gas supply head 51 provided above the laser irradiation head 20 and a cooling gas supply source 53 connected to the cooling gas supply head 51 via a line 52 to supply a cooling gas.
- the cooling gas supply head 51 is provided with injection nozzles 54 .
- the cooling gas supplied from the cooling gas supply source 53 to the cooling gas supply head 51 through the line 52 is injected to the wafer W through the injection nozzles 54 . Accordingly, the surface of the wafer W is cooled to thereby avoid bad influence caused by the temperature increase of the device.
- FIG. 4 shows a modification example of the apparatus shown in FIG. 3 , which includes a wafer cooling unit 50 ′ having a configuration different from that of the cooling unit 50 shown in FIG. 3 .
- the wafer cooling unit 50 ′ includes injection nozzles 56 arranged above the gas exhaust unit 23 along the substantially cylindrical gas exhaust unit 23 to inject a cooling gas to the wafer W, a connection line 57 for connecting the ends of the injection nozzles 56 with one another, and a cooling gas supply source 59 connected to the connection line 57 via a line 58 .
- the cooling gas supplied from the cooling gas supply source 59 through the line 58 and the connection line 57 is injected to the wafer W through the injection nozzles 56 . In this manner, the surface of the wafer W can be also cooled.
- a clean cooling gas instead of the air by the fan 25 may be introduced. Accordingly, a downflow of cooling gas is formed in the chamber 11 , thereby cooling the surface of the wafer W.
- the laser irradiation head (laser irradiation unit) is arranged above the wafer in the above embodiments, it is not limited thereto.
- a hollow mounting table 12 ′ having a ring-shaped laser transmission window 70 at a position corresponding to the peripheral portion of the wafer W can be provided and a laser irradiation unit 20 ′ is provided inside the mounting table 12 ′, so that ring-shaped laser light can be irradiated onto the BSP 2 of the peripheral portion of the wafer W without using the mirror member (reflection member) 22 .
- an ozone gas supply unit and a gas exhaust unit are not shown in FIG. 5 for simplicity, ozone gas injection nozzles arranged below and outside the circumferential BSP 2 may be used as the ozone gas supply unit, and the gas exhaust unit shown in FIG. 1 may be used.
- the present invention can be applied to various cases for removing polymers formed at a peripheral portion of a target substrate.
- a semiconductor wafer is used as a target substrate in the above embodiments, other substrates may be used without being limited thereto.
- ring-shaped laser light can be irradiated at once to whole polymer annularly adhered to a target substrate placed on the mounting table. Accordingly, it is possible to considerably increase a throughput compared to a conventional case of using a spotted laser light. Therefore, the laser light source of the laser irradiation unit may have a low output level to gradually heat and cool an irradiation portion without reducing a throughput. Further, it is possible to decrease heat stress while securing a high throughput and prevent peeling of the polymers. Moreover, since there is no need to rotate the target substrate, disturbance in the atmosphere does not occur during the process, thereby suppressing particle generation.
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/857,938 US8506718B2 (en) | 2009-08-18 | 2010-08-17 | Polymer removing apparatus and method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009189105A JP5478145B2 (ja) | 2009-08-18 | 2009-08-18 | ポリマー除去装置およびポリマー除去方法 |
JP2009-189105 | 2009-08-18 | ||
US24264609P | 2009-09-15 | 2009-09-15 | |
US12/857,938 US8506718B2 (en) | 2009-08-18 | 2010-08-17 | Polymer removing apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
US20110041874A1 US20110041874A1 (en) | 2011-02-24 |
US8506718B2 true US8506718B2 (en) | 2013-08-13 |
Family
ID=43604303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/857,938 Expired - Fee Related US8506718B2 (en) | 2009-08-18 | 2010-08-17 | Polymer removing apparatus and method |
Country Status (5)
Country | Link |
---|---|
US (1) | US8506718B2 (zh) |
JP (1) | JP5478145B2 (zh) |
KR (1) | KR101647155B1 (zh) |
CN (1) | CN101996865B (zh) |
TW (1) | TWI520200B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11087996B2 (en) | 2018-09-10 | 2021-08-10 | Samsung Electronics Co., Ltd. | Dry cleaning apparatus and dry cleaning method |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5712700B2 (ja) * | 2011-03-14 | 2015-05-07 | ウシオ電機株式会社 | レーザリフトオフ装置 |
US8759977B2 (en) | 2012-04-30 | 2014-06-24 | International Business Machines Corporation | Elongated via structures |
CN104941957B (zh) * | 2014-03-24 | 2018-01-12 | 睿励科学仪器(上海)有限公司 | 晶圆清洁装置及方法 |
JP6355537B2 (ja) * | 2014-12-02 | 2018-07-11 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2016115738A (ja) * | 2014-12-12 | 2016-06-23 | 東京エレクトロン株式会社 | エッチング処理方法及びベベルエッチング装置 |
WO2017109928A1 (ja) * | 2015-12-25 | 2017-06-29 | ギガフォトン株式会社 | レーザ照射装置 |
KR101900283B1 (ko) * | 2016-03-03 | 2018-11-05 | 에이피시스템 주식회사 | 레이저 리프트 오프 장비 |
JP6999264B2 (ja) * | 2016-08-04 | 2022-01-18 | 株式会社日本製鋼所 | レーザ剥離装置、レーザ剥離方法、及び有機elディスプレイの製造方法 |
WO2018025495A1 (ja) * | 2016-08-04 | 2018-02-08 | 株式会社日本製鋼所 | レーザ剥離装置、レーザ剥離方法、及び有機elディスプレイの製造方法 |
KR20180024381A (ko) * | 2016-08-30 | 2018-03-08 | 세메스 주식회사 | 분진 집진용 장치 및 이를 포함하는 레이저 가공 장치 |
CN106735888A (zh) * | 2016-12-07 | 2017-05-31 | 深圳市海目星激光科技有限公司 | 一种臭氧辅助切割装置及方法 |
US10002771B1 (en) * | 2017-10-10 | 2018-06-19 | Applied Materials, Inc. | Methods for chemical mechanical polishing (CMP) processing with ozone |
KR102000639B1 (ko) * | 2019-04-22 | 2019-07-17 | 세메스 주식회사 | 분진 집진용 장치 및 이를 포함하는 레이저 가공 장치 |
KR102312866B1 (ko) * | 2019-12-13 | 2021-10-14 | 세메스 주식회사 | 박막 식각 장치 |
KR102624578B1 (ko) * | 2020-09-14 | 2024-01-15 | 세메스 주식회사 | 기판 처리 설비 및 기판 처리 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049869A (ja) | 2004-07-09 | 2006-02-16 | Sekisui Chem Co Ltd | 基材処理装置及び方法 |
JP2006229075A (ja) | 2005-02-18 | 2006-08-31 | Sakaguchi Dennetsu Kk | レーザ加熱装置 |
JP2007311768A (ja) | 2006-04-20 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄装置,基板洗浄方法,基板処理装置 |
US20080073324A1 (en) * | 2004-07-09 | 2008-03-27 | Sekisui Chemical Co., Ltd. | Method For Processing Outer Periphery Of Substrate And Apparatus Thereof |
JP2008270748A (ja) | 2007-03-22 | 2008-11-06 | Tokyo Electron Ltd | 基板洗浄装置及び基板処理装置 |
US20090143894A1 (en) | 2007-11-13 | 2009-06-04 | Tokyo Electron Limited | Bevel/backside polymer removing method and device, substrate processing apparatus and storage medium |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3859543B2 (ja) * | 2002-05-22 | 2006-12-20 | レーザーフロントテクノロジーズ株式会社 | レーザ加工装置 |
CN101124663B (zh) * | 2004-07-09 | 2010-12-01 | 积水化学工业株式会社 | 用于处理基板的外周部的方法及设备 |
JP2008093682A (ja) * | 2006-10-10 | 2008-04-24 | Tokyo Electron Ltd | レーザ発光装置の位置調整方法 |
US20080296258A1 (en) * | 2007-02-08 | 2008-12-04 | Elliott David J | Plenum reactor system |
JP2008226991A (ja) * | 2007-03-09 | 2008-09-25 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP4929042B2 (ja) * | 2007-05-11 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | ウエハエッジクリーナー |
US7993464B2 (en) * | 2007-08-09 | 2011-08-09 | Rave, Llc | Apparatus and method for indirect surface cleaning |
-
2009
- 2009-08-18 JP JP2009189105A patent/JP5478145B2/ja not_active Expired - Fee Related
-
2010
- 2010-08-17 TW TW099127438A patent/TWI520200B/zh not_active IP Right Cessation
- 2010-08-17 KR KR1020100079326A patent/KR101647155B1/ko active IP Right Grant
- 2010-08-17 US US12/857,938 patent/US8506718B2/en not_active Expired - Fee Related
- 2010-08-18 CN CN2010102581792A patent/CN101996865B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006049869A (ja) | 2004-07-09 | 2006-02-16 | Sekisui Chem Co Ltd | 基材処理装置及び方法 |
US20080073324A1 (en) * | 2004-07-09 | 2008-03-27 | Sekisui Chemical Co., Ltd. | Method For Processing Outer Periphery Of Substrate And Apparatus Thereof |
JP2006229075A (ja) | 2005-02-18 | 2006-08-31 | Sakaguchi Dennetsu Kk | レーザ加熱装置 |
JP2007311768A (ja) | 2006-04-20 | 2007-11-29 | Tokyo Electron Ltd | 基板洗浄装置,基板洗浄方法,基板処理装置 |
JP2008270748A (ja) | 2007-03-22 | 2008-11-06 | Tokyo Electron Ltd | 基板洗浄装置及び基板処理装置 |
US20090143894A1 (en) | 2007-11-13 | 2009-06-04 | Tokyo Electron Limited | Bevel/backside polymer removing method and device, substrate processing apparatus and storage medium |
JP2009123831A (ja) | 2007-11-13 | 2009-06-04 | Tokyo Electron Ltd | Bsp除去方法、bsp除去装置、基板処理装置、及び記憶媒体 |
Non-Patent Citations (1)
Title |
---|
Machine Translation of JP2006-229075 by Watanabe et al., published Aug. 31, 2006. * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11087996B2 (en) | 2018-09-10 | 2021-08-10 | Samsung Electronics Co., Ltd. | Dry cleaning apparatus and dry cleaning method |
US11742221B2 (en) | 2018-09-10 | 2023-08-29 | Samsung Electronics Co., Ltd. | Dry cleaning apparatus and dry cleaning method |
Also Published As
Publication number | Publication date |
---|---|
KR101647155B1 (ko) | 2016-08-09 |
JP2011040670A (ja) | 2011-02-24 |
US20110041874A1 (en) | 2011-02-24 |
KR20110018843A (ko) | 2011-02-24 |
CN101996865B (zh) | 2012-10-10 |
CN101996865A (zh) | 2011-03-30 |
JP5478145B2 (ja) | 2014-04-23 |
TWI520200B (zh) | 2016-02-01 |
TW201120951A (en) | 2011-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8506718B2 (en) | Polymer removing apparatus and method | |
JP5802407B2 (ja) | 基板処理装置および基板処理方法 | |
JP5421825B2 (ja) | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP5379171B2 (ja) | 接合システム、基板処理システム、接合方法、プログラム及びコンピュータ記憶媒体 | |
WO2014129259A1 (ja) | 成膜方法、コンピュータ記憶媒体及び成膜システム | |
US20090065027A1 (en) | Substrate cleaning apparatus, substrate cleaning method, and substrate treatment apparatus | |
JP5538282B2 (ja) | 接合装置、接合方法、プログラム及びコンピュータ記憶媒体 | |
JP5580806B2 (ja) | 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 | |
JP2007242869A (ja) | 基板処理システム | |
WO2013136982A1 (ja) | 剥離装置、剥離システム及び剥離方法 | |
US20140158303A1 (en) | Bonding system, substrate processing system, and bonding method | |
JP2020203314A (ja) | 基板処理方法及び基板処理装置 | |
KR20190062366A (ko) | 기판 세정 장치, 기판 처리 장치, 기판 세정 방법 및 기판 처리 방법 | |
JP2004096086A (ja) | 処理装置及び処理方法 | |
JP2008226991A (ja) | プラズマ処理装置 | |
JP5048552B2 (ja) | 基板洗浄装置及び基板処理装置 | |
WO2014045803A1 (ja) | 接合システム、接合方法及びコンピュータ記憶媒体 | |
KR20220080777A (ko) | 지지 유닛 및 이를 포함하는 기판 처리 장치 | |
WO2004006318A1 (ja) | 処理装置及び処理方法 | |
KR20160110780A (ko) | 기판 처리 장치 및 기판 처리 방법 | |
JP6450633B2 (ja) | 異物検出方法、異物検出装置および剥離装置 | |
JP2015170624A (ja) | 接合システムおよび接合方法 | |
KR102270780B1 (ko) | 막질 제거 방법, 기판 처리 방법 및 기판 처리 장치 | |
US20240145267A1 (en) | Substrate processing apparatus and substrate processing method | |
JP2003347267A (ja) | 基板処理装置および基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: TOKYO ELECTRON LIMITED, JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHINDOU, TAKEHIRO;KONDO, MASAKI;REEL/FRAME:024847/0819 Effective date: 20100729 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20210813 |