TWI767022B - 基板處理方法及基板處理系統 - Google Patents

基板處理方法及基板處理系統 Download PDF

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Publication number
TWI767022B
TWI767022B TW107122875A TW107122875A TWI767022B TW I767022 B TWI767022 B TW I767022B TW 107122875 A TW107122875 A TW 107122875A TW 107122875 A TW107122875 A TW 107122875A TW I767022 B TWI767022 B TW I767022B
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TW
Taiwan
Prior art keywords
substrate
daf
main surface
adhesive tape
support substrate
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Application number
TW107122875A
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English (en)
Chinese (zh)
Other versions
TW201921460A (zh
Inventor
田村武
田之上隼斗
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201921460A publication Critical patent/TW201921460A/zh
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Publication of TWI767022B publication Critical patent/TWI767022B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW107122875A 2017-07-06 2018-07-03 基板處理方法及基板處理系統 TWI767022B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-133017 2017-07-06
JP2017133017 2017-07-06

Publications (2)

Publication Number Publication Date
TW201921460A TW201921460A (zh) 2019-06-01
TWI767022B true TWI767022B (zh) 2022-06-11

Family

ID=64950031

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107122875A TWI767022B (zh) 2017-07-06 2018-07-03 基板處理方法及基板處理系統

Country Status (3)

Country Link
JP (1) JP6956788B2 (ja)
TW (1) TWI767022B (ja)
WO (1) WO2019009123A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7221076B2 (ja) * 2019-02-18 2023-02-13 東京エレクトロン株式会社 レーザー加工装置の設定方法、レーザー加工方法、レーザー加工装置、薄化システム、および基板処理方法
JP7466996B2 (ja) 2020-06-01 2024-04-15 株式会社ディスコ 被加工物の搬送方法
US20240153822A1 (en) * 2021-03-09 2024-05-09 Tokyo Electron Limited Semiconductor chip manufacturing method and substrate processing apparatus
CN117099187A (zh) * 2021-03-31 2023-11-21 琳得科株式会社 带树脂膜的单片化工件加工物的制造方法、以及带树脂膜的单片化工件加工物的制造装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177245A (ja) * 1992-12-04 1994-06-24 Toshiba Corp 半導体装置の製造方法
JP2011181822A (ja) * 2010-03-03 2011-09-15 Elpida Memory Inc 半導体装置の製造方法
JP2014011445A (ja) * 2012-07-03 2014-01-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014017434A (ja) * 2012-07-11 2014-01-30 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201535504A (zh) * 2014-03-07 2015-09-16 Applied Materials Inc 用於在混合雷射劃線及電漿蝕刻的晶圓切割製程期間清潔晶圓之方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013135198A (ja) * 2011-12-27 2013-07-08 Fujitsu Semiconductor Ltd 半導体装置の製造方法
JP6004705B2 (ja) * 2012-04-02 2016-10-12 株式会社ディスコ 接着フィルム付きチップの形成方法
JP2017005158A (ja) * 2015-06-12 2017-01-05 株式会社ディスコ ウエーハの裏面研削方法
JP2018014451A (ja) * 2016-07-22 2018-01-25 株式会社ディスコ ウェーハの加工方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177245A (ja) * 1992-12-04 1994-06-24 Toshiba Corp 半導体装置の製造方法
JP2011181822A (ja) * 2010-03-03 2011-09-15 Elpida Memory Inc 半導体装置の製造方法
JP2014011445A (ja) * 2012-07-03 2014-01-20 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014017434A (ja) * 2012-07-11 2014-01-30 Disco Abrasive Syst Ltd ウエーハの加工方法
TW201535504A (zh) * 2014-03-07 2015-09-16 Applied Materials Inc 用於在混合雷射劃線及電漿蝕刻的晶圓切割製程期間清潔晶圓之方法

Also Published As

Publication number Publication date
JP6956788B2 (ja) 2021-11-02
WO2019009123A1 (ja) 2019-01-10
JPWO2019009123A1 (ja) 2020-03-26
TW201921460A (zh) 2019-06-01

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