TWI726977B - 缺陷檢查裝置 - Google Patents

缺陷檢查裝置 Download PDF

Info

Publication number
TWI726977B
TWI726977B TW106101637A TW106101637A TWI726977B TW I726977 B TWI726977 B TW I726977B TW 106101637 A TW106101637 A TW 106101637A TW 106101637 A TW106101637 A TW 106101637A TW I726977 B TWI726977 B TW I726977B
Authority
TW
Taiwan
Prior art keywords
defect
area
image
wafer
effective area
Prior art date
Application number
TW106101637A
Other languages
English (en)
Chinese (zh)
Other versions
TW201805620A (zh
Inventor
山本比佐史
Original Assignee
日商東麗工程股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東麗工程股份有限公司 filed Critical 日商東麗工程股份有限公司
Publication of TW201805620A publication Critical patent/TW201805620A/zh
Application granted granted Critical
Publication of TWI726977B publication Critical patent/TWI726977B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW106101637A 2016-03-07 2017-01-18 缺陷檢查裝置 TWI726977B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016043273A JP6752593B2 (ja) 2016-03-07 2016-03-07 欠陥検査装置
JP??2016-043273 2016-03-07

Publications (2)

Publication Number Publication Date
TW201805620A TW201805620A (zh) 2018-02-16
TWI726977B true TWI726977B (zh) 2021-05-11

Family

ID=59789179

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106101637A TWI726977B (zh) 2016-03-07 2017-01-18 缺陷檢查裝置

Country Status (5)

Country Link
JP (1) JP6752593B2 (ja)
KR (1) KR102636309B1 (ja)
CN (1) CN108700531B (ja)
TW (1) TWI726977B (ja)
WO (1) WO2017154319A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7007993B2 (ja) * 2018-07-06 2022-01-25 東レエンジニアリング株式会社 ダイシングチップ検査装置
JP7157580B2 (ja) * 2018-07-19 2022-10-20 東京エレクトロン株式会社 基板検査方法及び基板検査装置
CN109596639A (zh) * 2018-11-30 2019-04-09 德淮半导体有限公司 缺陷检测***及缺陷检测方法
WO2020237683A1 (zh) * 2019-05-31 2020-12-03 华为技术有限公司 一种检测芯片裂缝的装置
JP7324116B2 (ja) 2019-10-15 2023-08-09 キヤノン株式会社 異物検査装置および異物検査方法
JP2022061127A (ja) * 2020-10-06 2022-04-18 東レエンジニアリング株式会社 外観検査装置および方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005024565A (ja) * 2004-08-02 2005-01-27 Lintec Corp ウェハ外観検査装置およびウェハ外観検査方法
JP2007324241A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体素子の外観検査方法
CN102053093A (zh) * 2010-11-08 2011-05-11 北京大学深圳研究生院 一种晶圆表面切割芯片的表面缺陷检测方法
TW201407127A (zh) * 2012-08-10 2014-02-16 Toshiba Kk 缺陷檢查裝置
TW201614256A (en) * 2014-10-15 2016-04-16 Macronix Int Co Ltd Inspection method for contact by die to database

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090776B2 (ja) * 1992-04-30 2000-09-25 株式会社東芝 発光ダイオードの外観検査方法
JP3625236B2 (ja) * 1996-01-29 2005-03-02 株式会社ルネサステクノロジ 被検査パターンの欠陥検査方法および半導体製造プロセス評価方法
JPH09293761A (ja) * 1996-04-24 1997-11-11 Rohm Co Ltd 半導体チップの製造方法
JPH10123064A (ja) 1996-10-24 1998-05-15 Hitachi Metals Ltd 外観検査方法
JP3481605B2 (ja) * 2001-04-26 2003-12-22 アジアエレクトロニクス株式会社 方向判別装置
JP2004212221A (ja) * 2002-12-27 2004-07-29 Toshiba Corp パターン検査方法及びパターン検査装置
JPWO2005001456A1 (ja) * 2003-06-30 2006-08-10 株式会社東京精密 パターン比較検査方法およびパターン比較検査装置
KR100567625B1 (ko) * 2004-10-19 2006-04-04 삼성전자주식회사 결함 검사 방법 및 이를 수행하기 위한 장치
JP2009506339A (ja) * 2005-08-30 2009-02-12 カムテック エルティーディー． 検査システム、及び基準フレームに基づいて欠陥を検査する方法
CN100499057C (zh) * 2006-06-12 2009-06-10 中芯国际集成电路制造(上海)有限公司 晶片检测方法
JP5349742B2 (ja) * 2006-07-07 2013-11-20 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
US7616804B2 (en) * 2006-07-11 2009-11-10 Rudolph Technologies, Inc. Wafer edge inspection and metrology
JP2008091476A (ja) * 2006-09-29 2008-04-17 Olympus Corp 外観検査装置
JP2010008149A (ja) * 2008-06-25 2010-01-14 Panasonic Corp 検査領域設定方法
CN202676612U (zh) * 2012-07-19 2013-01-16 华南师范大学 一种用于测试led电路芯片的装置
US8948495B2 (en) * 2012-08-01 2015-02-03 Kla-Tencor Corp. Inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer
CN103674965B (zh) * 2013-12-06 2017-06-06 大族激光科技产业集团股份有限公司 一种晶圆外观缺陷的分类以及检测方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005024565A (ja) * 2004-08-02 2005-01-27 Lintec Corp ウェハ外観検査装置およびウェハ外観検査方法
JP2007324241A (ja) * 2006-05-30 2007-12-13 Toshiba Corp 半導体素子の外観検査方法
CN102053093A (zh) * 2010-11-08 2011-05-11 北京大学深圳研究生院 一种晶圆表面切割芯片的表面缺陷检测方法
TW201407127A (zh) * 2012-08-10 2014-02-16 Toshiba Kk 缺陷檢查裝置
TW201614256A (en) * 2014-10-15 2016-04-16 Macronix Int Co Ltd Inspection method for contact by die to database

Also Published As

Publication number Publication date
TW201805620A (zh) 2018-02-16
CN108700531B (zh) 2021-03-16
WO2017154319A1 (ja) 2017-09-14
KR102636309B1 (ko) 2024-02-15
KR20180118754A (ko) 2018-10-31
CN108700531A (zh) 2018-10-23
JP2017161236A (ja) 2017-09-14
JP6752593B2 (ja) 2020-09-09

Similar Documents

Publication Publication Date Title
TWI726977B (zh) 缺陷檢查裝置
US8254663B2 (en) Ultrafine lithography pattern inspection using multi-stage TDI image sensors with false image removability
KR102066520B1 (ko) 에피택셜 웨이퍼 이면 검사 장치 및 그것을 이용한 에피택셜 웨이퍼 이면 검사 방법
JP2010520622A (ja) ウェーハ上に形成されたアレイ領域のための検査領域のエッジを正確に識別する方法、及び、ウェーハ上に形成されたアレイ領域に検知された欠陥をビニングする方法
TWI667530B (zh) Inspection method and inspection device
JP5514754B2 (ja) 検査装置および検査方法
KR20200010058A (ko) 기판 검사 방법 및 기판 검사 장치
TW200844649A (en) Method and apparatus for inspecting a defect in a gray tone mask, method of inspecting a defect in a photo mask, method of producing a gray tone mask, and method of transferring a pattern
KR101828536B1 (ko) 패널 검사 방법 및 장치
US8094926B2 (en) Ultrafine pattern discrimination using transmitted/reflected workpiece images for use in lithography inspection system
KR102350548B1 (ko) 웨이퍼 검사 방법
US8055056B2 (en) Method of detecting defects of patterns on a semiconductor substrate and apparatus for performing the same
JP2001281161A (ja) 欠陥検査装置及び検査方法
JP2003279319A (ja) 寸法検査方法及びその装置並びにマスクの製造方法
JP2009294123A (ja) パターン識別装置、パターン識別方法及び試料検査装置
JP2006234554A (ja) パターン検査方法およびパターン検査装置
JP4662424B2 (ja) ガラス基板の検査方法及び検査装置、並びに表示用パネルの製造方法
JP6878247B2 (ja) パターン検査方法およびパターン検査装置
JP2010286500A (ja) 試料検査装置及び試料検査方法
JP2007156262A (ja) フォトマスク検査方法およびフォトマスク検査装置
KR102583036B1 (ko) 기판 검사 방법
JP2023142887A (ja) 欠陥検査装置及び欠陥検査方法
JP4889018B2 (ja) 外観検査方法
JP6018929B2 (ja) 検査方法
JP2009145161A (ja) 欠陥検出方法および欠陥検出装置