TWI634071B - 氮化矽粉末、多晶矽鑄錠用脫模劑及多晶矽鑄錠之製造方法 - Google Patents

氮化矽粉末、多晶矽鑄錠用脫模劑及多晶矽鑄錠之製造方法 Download PDF

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Publication number
TWI634071B
TWI634071B TW106143841A TW106143841A TWI634071B TW I634071 B TWI634071 B TW I634071B TW 106143841 A TW106143841 A TW 106143841A TW 106143841 A TW106143841 A TW 106143841A TW I634071 B TWI634071 B TW I634071B
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TW
Taiwan
Prior art keywords
silicon nitride
less
nitride powder
powder
silicon
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TW106143841A
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English (en)
Chinese (zh)
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TW201829302A (zh
Inventor
王丸卓司
柴田耕司
山尾猛
山田哲夫
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日商宇部興產股份有限公司
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Publication of TW201829302A publication Critical patent/TW201829302A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C3/00—Selection of compositions for coating the surfaces of moulds, cores, or patterns
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Mold Materials And Core Materials (AREA)
TW106143841A 2016-12-12 2017-12-12 氮化矽粉末、多晶矽鑄錠用脫模劑及多晶矽鑄錠之製造方法 TWI634071B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2016-240750 2016-12-12
JP2016240750 2016-12-12

Publications (2)

Publication Number Publication Date
TW201829302A TW201829302A (zh) 2018-08-16
TWI634071B true TWI634071B (zh) 2018-09-01

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TW106143841A TWI634071B (zh) 2016-12-12 2017-12-12 氮化矽粉末、多晶矽鑄錠用脫模劑及多晶矽鑄錠之製造方法

Country Status (4)

Country Link
JP (1) JP6693575B2 (ja)
CN (1) CN110062745A (ja)
TW (1) TWI634071B (ja)
WO (1) WO2018110560A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7353994B2 (ja) * 2020-01-17 2023-10-02 株式会社トクヤマ 窒化ケイ素の製造方法
WO2022004755A1 (ja) * 2020-06-30 2022-01-06 株式会社トクヤマ 窒化ケイ素焼結基板
WO2023210649A1 (ja) * 2022-04-27 2023-11-02 株式会社燃焼合成 β窒化ケイ素柱状粒子、複合粒子、放熱用焼結基板、樹脂複合物、及び、無機複合物、並びに、β窒化ケイ素柱状粒子の製造方法、複合粒子の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004262756A (ja) * 2004-04-27 2004-09-24 Hitachi Metals Ltd 窒化ケイ素質粉末、窒化ケイ素質焼結体及びこれを用いた電子部品用回路基板
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
TW201605763A (zh) * 2014-06-16 2016-02-16 Ube Industries 氮化矽粉末、氮化矽燒結體及電路基板、以及氮化矽粉末之製造方法

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JP2560252B2 (ja) * 1994-04-05 1996-12-04 科学技術庁無機材質研究所長 窒化ケイ素微粉末及びその製造方法
DE10165107B3 (de) * 2000-09-20 2015-06-18 Hitachi Metals, Ltd. Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte
JP3877645B2 (ja) * 2002-06-03 2007-02-07 電気化学工業株式会社 窒化ケイ素粉末の製造方法
JP2007261832A (ja) * 2006-03-27 2007-10-11 Sumco Solar Corp 窒化珪素離型材粉末、離型材の作製方法及び焼成方法
JP5440977B2 (ja) * 2009-09-03 2014-03-12 電気化学工業株式会社 高純度窒化ケイ素微粉末の製造方法
JP5518584B2 (ja) * 2010-06-16 2014-06-11 電気化学工業株式会社 離型剤用窒化珪素粉末。
JP5901448B2 (ja) * 2012-06-28 2016-04-13 デンカ株式会社 離型剤用窒化ケイ素粉末
EP2977426B1 (en) * 2013-03-21 2017-11-29 UBE Industries, Ltd. Oxynitride fluorescent powder and method for manufacturing same
JP5975176B2 (ja) * 2013-07-11 2016-08-23 宇部興産株式会社 多結晶シリコンインゴット鋳造用鋳型の離型剤用窒化珪素粉末およびその製造法、その窒化珪素粉末を含有したスラリー、多結晶シリコンインゴット鋳造用鋳型およびその製造方法、ならびにその鋳型を用いた多結晶シリコンインゴット鋳の製造方法
JP6245602B2 (ja) * 2013-10-21 2017-12-13 国立研究開発法人産業技術総合研究所 窒化ケイ素フィラー、樹脂複合物、絶縁基板、半導体封止材、窒化ケイ素フィラーの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004262756A (ja) * 2004-04-27 2004-09-24 Hitachi Metals Ltd 窒化ケイ素質粉末、窒化ケイ素質焼結体及びこれを用いた電子部品用回路基板
JP2013071864A (ja) * 2011-09-28 2013-04-22 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末およびその製造方法
TW201605763A (zh) * 2014-06-16 2016-02-16 Ube Industries 氮化矽粉末、氮化矽燒結體及電路基板、以及氮化矽粉末之製造方法

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Publication number Publication date
TW201829302A (zh) 2018-08-16
CN110062745A (zh) 2019-07-26
WO2018110560A1 (ja) 2018-06-21
JPWO2018110560A1 (ja) 2019-07-04
JP6693575B2 (ja) 2020-05-13

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