CN110062745A - 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 - Google Patents

氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 Download PDF

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Publication number
CN110062745A
CN110062745A CN201780076707.2A CN201780076707A CN110062745A CN 110062745 A CN110062745 A CN 110062745A CN 201780076707 A CN201780076707 A CN 201780076707A CN 110062745 A CN110062745 A CN 110062745A
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CN
China
Prior art keywords
silicon nitride
alpha
nitride powders
ingot casting
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN201780076707.2A
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English (en)
Chinese (zh)
Inventor
王丸卓司
柴田耕司
山尾猛
山田哲夫
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Ube Corp
Original Assignee
Ube Industries Ltd
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Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Publication of CN110062745A publication Critical patent/CN110062745A/zh
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22C—FOUNDRY MOULDING
    • B22C3/00—Selection of compositions for coating the surfaces of moulds, cores, or patterns
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Mold Materials And Core Materials (AREA)
CN201780076707.2A 2016-12-12 2017-12-12 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法 Pending CN110062745A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016-240750 2016-12-12
JP2016240750 2016-12-12
PCT/JP2017/044606 WO2018110560A1 (ja) 2016-12-12 2017-12-12 窒化ケイ素粉末、多結晶シリコンインゴット用離型剤及び多結晶シリコンインゴットの製造方法

Publications (1)

Publication Number Publication Date
CN110062745A true CN110062745A (zh) 2019-07-26

Family

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CN201780076707.2A Pending CN110062745A (zh) 2016-12-12 2017-12-12 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法

Country Status (4)

Country Link
JP (1) JP6693575B2 (ja)
CN (1) CN110062745A (ja)
TW (1) TWI634071B (ja)
WO (1) WO2018110560A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115702130A (zh) * 2020-06-30 2023-02-14 株式会社德山 氮化硅烧结基板

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7353994B2 (ja) * 2020-01-17 2023-10-02 株式会社トクヤマ 窒化ケイ素の製造方法
WO2023210649A1 (ja) * 2022-04-27 2023-11-02 株式会社燃焼合成 β窒化ケイ素柱状粒子、複合粒子、放熱用焼結基板、樹脂複合物、及び、無機複合物、並びに、β窒化ケイ素柱状粒子の製造方法、複合粒子の製造方法

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JPH0834603A (ja) * 1994-04-05 1996-02-06 Natl Inst For Res In Inorg Mater 窒化ケイ素微粉末及びその製造方法
CN1356292A (zh) * 2000-09-20 2002-07-03 日立金属株式会社 氮化硅粉、其烧结体、基板、及由此的电路板和热电元件模块
JP2007261832A (ja) * 2006-03-27 2007-10-11 Sumco Solar Corp 窒化珪素離型材粉末、離型材の作製方法及び焼成方法
JP2011051856A (ja) * 2009-09-03 2011-03-17 Denki Kagaku Kogyo Kk 高純度窒化ケイ素微粉末の製造方法
JP2014009111A (ja) * 2012-06-28 2014-01-20 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末
CN105143399A (zh) * 2013-03-21 2015-12-09 宇部兴产株式会社 氧氮化物荧光体粉末及其制造方法
CN105377756A (zh) * 2013-07-11 2016-03-02 宇部兴产株式会社 多晶硅锭铸造用铸模的脱模剂用氮化硅粉末及其制造法、含有该氮化硅粉末的浆料、多晶硅锭铸造用铸模及其制造方法、及使用该铸模的多晶硅锭的制造方法

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JP3877645B2 (ja) * 2002-06-03 2007-02-07 電気化学工業株式会社 窒化ケイ素粉末の製造方法
JP4089974B2 (ja) * 2004-04-27 2008-05-28 日立金属株式会社 窒化ケイ素質粉末、窒化ケイ素質焼結体及びこれを用いた電子部品用回路基板
JP5518584B2 (ja) * 2010-06-16 2014-06-11 電気化学工業株式会社 離型剤用窒化珪素粉末。
JP5930637B2 (ja) * 2011-09-28 2016-06-08 デンカ株式会社 離型剤用窒化ケイ素粉末およびその製造方法
JP6245602B2 (ja) * 2013-10-21 2017-12-13 国立研究開発法人産業技術総合研究所 窒化ケイ素フィラー、樹脂複合物、絶縁基板、半導体封止材、窒化ケイ素フィラーの製造方法
KR20170021282A (ko) * 2014-06-16 2017-02-27 우베 고산 가부시키가이샤 질화규소 분말, 질화규소 소결체 및 회로 기판, 및 질화규소 분말의 제조 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834603A (ja) * 1994-04-05 1996-02-06 Natl Inst For Res In Inorg Mater 窒化ケイ素微粉末及びその製造方法
CN1356292A (zh) * 2000-09-20 2002-07-03 日立金属株式会社 氮化硅粉、其烧结体、基板、及由此的电路板和热电元件模块
JP2007261832A (ja) * 2006-03-27 2007-10-11 Sumco Solar Corp 窒化珪素離型材粉末、離型材の作製方法及び焼成方法
JP2011051856A (ja) * 2009-09-03 2011-03-17 Denki Kagaku Kogyo Kk 高純度窒化ケイ素微粉末の製造方法
JP2014009111A (ja) * 2012-06-28 2014-01-20 Denki Kagaku Kogyo Kk 離型剤用窒化ケイ素粉末
CN105143399A (zh) * 2013-03-21 2015-12-09 宇部兴产株式会社 氧氮化物荧光体粉末及其制造方法
CN105377756A (zh) * 2013-07-11 2016-03-02 宇部兴产株式会社 多晶硅锭铸造用铸模的脱模剂用氮化硅粉末及其制造法、含有该氮化硅粉末的浆料、多晶硅锭铸造用铸模及其制造方法、及使用该铸模的多晶硅锭的制造方法

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KE EKSTROM ET AL.: "Beta-Si3N4 particles as nucleation sites in multicrystalline silicon", 《ACTA MATERIALIA》 *
袁向东等: "多晶硅铸锭涂层用高纯Ｓｉ3Ｎ4微粉的研究进展与展望", 《硅酸盐通报》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115702130A (zh) * 2020-06-30 2023-02-14 株式会社德山 氮化硅烧结基板

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TW201829302A (zh) 2018-08-16
WO2018110560A1 (ja) 2018-06-21
JPWO2018110560A1 (ja) 2019-07-04
TWI634071B (zh) 2018-09-01
JP6693575B2 (ja) 2020-05-13

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