TWI575053B - 光反射性異向性導電接著劑及發光裝置 - Google Patents
光反射性異向性導電接著劑及發光裝置 Download PDFInfo
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- TWI575053B TWI575053B TW102121079A TW102121079A TWI575053B TW I575053 B TWI575053 B TW I575053B TW 102121079 A TW102121079 A TW 102121079A TW 102121079 A TW102121079 A TW 102121079A TW I575053 B TWI575053 B TW I575053B
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
- C09J183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
- C08G77/388—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon containing nitrogen
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
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- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/45099—Material
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/481—Disposition
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
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- H01L2924/181—Encapsulation
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
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- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
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Description
本發明係關於一種用以將發光元件異向性導電連接於配線板之光反射性異向性導電接著劑、使用該接著劑將發光元件安裝於配線板而成之發光裝置。
使用發光二極體(LED)元件之發光裝置被廣泛使用,舊型之發光裝置之構造係如圖3所示,為如下者:利用黏晶(die bond)接著劑32將LED元件33接合於基板31上,利用金線37將其上表面之p電極34與n電極35打線接合(wire bonding)於基板31之連接端子36,利用透明鑄模(mould)樹脂38將LED元件33整體進行密封。然而,於圖3之發光裝置之情形時,存在如下問題:LED元件33所發出之光中,出射至上表面側之400~500nm波長之光被金線吸收,又,出射至下表面側之光之一部分被黏晶接著劑32吸收,而使LED元件33之發光效率降低。
因此,就LED元件之光反射相關之發光效率提高的觀點而言,提出有如圖4所示般將LED元件33進行覆晶(flip chip)構裝(專利文獻1)。於該覆晶構裝技術中,p電極34與n電極35處分別形成有凸塊39,進而,於LED元件33之凸塊形成面,以與p電極34與n電極35絕緣之方式設置有光反射層40。並且,LED元件33與基板31係使用異向性導電糊41或異向性導電膜(未圖示)並使其等硬化而進行連接固定。因此,
於圖4之發光裝置中,朝LED元件33之上方出射之光不會被金線吸收,朝下方出射之光大部分經光反射層40反射而出射至上方,因此發光效率(光提取效率)不會降低。
又,除LED元件之光反射相關之發光效率提高的觀點以外,就防止伴隨LED元件之安裝中所使用之異向性導電糊或異向性導電膜中絕緣性樹脂成分因熱或光導致變色而使LED元件之出射光發生顏色變化的觀點而言,嘗試異向性導電糊或異向性導電膜中之絕緣性樹脂成分採用耐熱性、耐光性優異之雙液硬化型甲基聚矽氧樹脂或雙液硬化型苯基聚矽氧樹脂。
專利文獻1:日本特開平11-168235號公報
然而,專利文獻1之技術中,必須於LED元件33上利用金屬蒸鍍法等以與p電極34與n電極35絕緣之方式設置光反射層40,於製造上存在無法避免成本上升之問題,另一方面,於未設置光反射層40之情形時,存在如下問題:硬化之異向性導電糊或異向性導電膜中由金、鎳或銅被覆之導電粒子之表面呈現茶色或暗茶色,又,分散有導電粒子之環氧樹脂黏合劑本身亦由於常用為使其硬化之咪唑系潛伏性硬化劑而呈現茶色,而難以提高發光元件所發出之光之發光效率(光提取效率)。
又,於異向性導電糊或異向性導電膜中之絕緣性樹脂成分採用雙液硬化型甲基聚矽氧樹脂或雙液硬化型苯基聚矽氧樹脂之情形時,存在如下問題:可抑制因熱或光所致之絕緣性樹脂成分之變色,但LED元件對於構裝基板之剝離強度(晶片剪力強度,die shear strength)成為不適於實
際使用之級別。
本發明之目的在於解決以上先前技術之問題,提供一種異向性導電接著劑、使用該接著劑將發光元件覆晶構裝於配線板而成之發光裝置,該異向性導電接著劑於使用異向性導電接著劑將發光二極體(LED)元件等發光元件覆晶構裝於配線板而製造發光裝置時,即使未於LED元件上設置導致製造成本增大之光反射層亦可改善發光效率,且難以因熱或光而變色,而且於實際使用上表現充分之晶片剪力強度。
本發明人等發現:若使異向性導電接著劑本身具有光反射功能則可使發光效率不降低,於該假設下,藉由於異向性導電接著劑中調配光反射性絕緣粒子,而可使發光元件之發光效率不降低。又,本發明人等發現:藉由使用具有特定結構之二縮水甘油基異氰尿醯基(diglycidylisocyanuryl)改質聚矽氧烷作為異向性導電接著劑之絕緣性接著成分,可防止異向性導電接著劑因熱或光而變色,且於實際使用上表現充分之晶片剪力強度。於是,基於該等見解以至完成本發明。
即,本發明提供一種光反射性異向性導電接著劑,係用以將發光元件異向性導電連接於配線板者,其特徵在於:含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子,且熱硬化性樹脂組成物含有式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷、及環氧樹脂用硬化劑。
式(1)中,R為烷基或芳基,n為1~40。
又,作為該光反射性異向性導電接著劑之特佳態樣,本發明提供一種光反射性異向性導電接著劑,其中導電粒子為經金屬材料被覆之核粒子及光反射層所構成之光反射性導電粒子,該光反射層係於該核粒子表面由選自氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中之至少一種無機粒子所形成。
又,本發明提供一種發光裝置,其係經由上述光反射性異向性導電接著劑將發光元件以覆晶方式安裝於配線板而成。
用以將發光元件異向性導電連接於配線板之本發明之光反射性異向性導電接著劑含有作為黏合劑之熱硬化性樹脂組成物、光反射性絕緣粒子、及導電粒子。該熱硬化性樹脂組成物含有利用環氧樹脂用硬化劑進行硬化之式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷。該聚矽氧烷係於其側鏈鍵結有二縮水甘油基異氰尿醯基烷基。因此,可防止異向性導電接著劑因熱或光而變色,並且可實現於實際使用上充分之晶片剪力強度。
又,本發明之光反射性異向性導電接著劑含有光反射性絕緣粒子,因此可反射光。尤其,光反射性絕緣粒子為選自由氧化鈦粒子、氮化硼粒子、氧化鋅粒子及氧化鋁粒子所組成之群中之至少一種無機粒子、
或為經絕緣性樹脂被覆鱗片狀或球狀金屬粒子之表面的樹脂被覆金屬粒子時,由於粒子本身略呈白色,因此反射特性對於可見光之波長相依性較小,因此,可提高發光效率,並且可使發光元件之發光色以原本之顏色反射。
又,進而,於使用經金屬材料被覆之核粒子、及於其表面由氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子形成之白色~灰色之光反射層所構成的光反射性導電粒子作為導電粒子之情形時,該光反射性導電粒子本身呈現白色~灰色,因此反射特性對於可見光之波長相依性較小,因此,可進一步提高發光效率,並且可使發光元件之發光色以原本之顏色反射。
1‧‧‧核粒子
2‧‧‧無機粒子
3‧‧‧光反射層
4‧‧‧熱塑性樹脂
10、20‧‧‧光反射性導電粒子
11‧‧‧熱硬化性樹脂組成物之硬化物
21‧‧‧基板
22‧‧‧連接端子
23‧‧‧LED元件
24‧‧‧n電極
25‧‧‧P電極
26‧‧‧凸塊
100‧‧‧光反射性異向性導電接著劑之硬化物
200‧‧‧發光裝置
圖1A係本發明之光反射性異向性導電接著劑用光反射性導電粒子之剖面圖。
圖1B係本發明之光反射性異向性導電接著劑用光反射性導電粒子之剖面圖。
圖2係本發明之發光裝置之剖面圖。
圖3係先前之發光裝置之剖面圖。
圖4係先前之發光裝置之剖面圖。
本發明係一種光反射性異向性導電接著劑,其係用以將發光元件異向性導電連接於配線板者,且其含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子。首先,對作為黏合劑之熱硬化性樹脂組成物進行說明。
<熱硬化性樹脂組成物>
於本發明中,熱硬化性樹脂組成物含有式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷、及環氧樹脂用硬化劑。藉由含有式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷,可防止異向性導電接著劑因熱或光而變色,並且可實現於實際使用上充分之晶片剪力強度。
式(1)中,R為碳數1~6之低級烷基等烷基、或碳環式芳香族基、雜環式芳香族等芳基。作為烷基之較佳具體例,可列舉甲基、乙基、丙基、異丙基、丁基、異丁基,作為特佳之烷基,可列舉甲基。又,作為芳基之較佳具體例,可列舉苯基。n為1~40之整數,較佳為1~4之整數,更佳為1或2。
式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷於熱硬化性樹脂組成物中之含量若過少,則有光反射性異向性導電接著劑之接著性能降低之傾向,若過多,則有未硬化環氧成分量變得過多之傾向,因此較佳為45~65質量%,更佳為50~60質量%。
又,式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷可藉由如下方法進行製造:如以下反應式所示,將式(a)之氫化聚矽氧烷與式(b)之1-烯丙基-3,5-二縮水甘油基異氰尿酸酯均勻地混合之後,於Karstedt觸媒(1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷鉑(0)錯合物溶液)之存在下自室溫加熱至150℃。可利用常用方法(濃縮處理、管柱處理等)自反
應混合物單離出式(1)之化合物。
除式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷以外,熱硬化性樹脂組成物可於無損發明之效果之範圍內含有雜環系環氧化合物或脂環式環氧化合物或氫化環氧化合物等。
作為雜環系環氧化合物,可列舉具有三環之環氧化合物,例如,可列舉1,3,5-三(2,3-環氧丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮(換言之,異氰尿酸三縮水甘油酯)。
作為脂環式環氧化合物,可較佳地列舉分子內具有2個以上環氧基者。該等可為液狀,亦可為固體狀。其中,就可對硬化物確保適合LED元件之構裝等之透光性、且速硬化性亦優異方面而言,可較佳地使用縮水甘油基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯。
作為氫化環氧化合物,可使用上述雜環系環氧化合物或脂環式環氧化合物之氫化物或其他公知之氫化環氧樹脂。
該等脂環式環氧化合物或雜環系環氧化合物或氫化環氧化合物對於式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷,可單獨併用,亦可併用2種以上。又,除該等環氧化合物以外,亦可於無損本發明之效果之範圍內併用其他環氧化合物。例如,可列舉使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、對苯二酚、鄰苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基
雙酚A、四甲基雙酚F、三(羥苯基)甲烷、聯二甲苯酚、苯酚酚醛清漆、甲酚酚醛清漆等多元酚與表氯醇進行反應所獲得之縮水甘油醚;使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇進行反應所獲得之聚縮水甘油醚;使如對羥基苯甲酸、β-羥基萘甲酸之類的羥基羧酸與表氯醇進行反應所獲得之縮水甘油醚酯;由如鄰苯二甲酸、甲基鄰苯二甲酸、間苯二甲酸、對苯二甲酸、四氫鄰苯二甲酸、內亞甲基四氫鄰苯二甲酸(endomethylenetetrahydrophthalic acid)、內亞甲基六氫鄰苯二甲酸、1,2,4-苯三甲酸(trimellitic acid)、聚合脂肪酸之類的聚羧酸所獲得之聚縮水甘油酯;由胺基苯酚、胺基烷基苯酚所獲得之縮水甘油基胺基縮水甘油醚;由胺基苯甲酸所獲得之縮水甘油基胺基縮水甘油酯;由苯胺、甲苯胺、三溴苯胺、苯二甲基二胺(xylylenediamine)、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯基碸等所獲得之縮水甘油胺;環氧化聚烯烴等公知之環氧樹脂類。
作為環氧樹脂用硬化劑,可使用公知之環氧樹脂用硬化劑。例如,可自胺系硬化劑、聚醯胺系硬化劑、酸酐系硬化劑、咪唑系硬化劑、聚硫醇系硬化劑、聚硫化物系硬化劑、三氟化硼-胺錯合物系硬化劑、雙氰胺、有機酸醯肼等中選擇而使用。其中,就透光性、耐熱性等觀點而言,可較佳地使用酸酐系硬化劑。
作為酸酐系硬化劑,可列舉琥珀酸酐、鄰苯二甲酸酐、順丁烯二酸酐、1,2,4-苯三甲酸酐、均苯四甲酸二酐、六氫鄰苯二甲酸酐、3-甲基-六氫鄰苯二甲酸酐、4-甲基-六氫鄰苯二甲酸酐、或4-甲基-六氫鄰苯二甲酸酐與六氫鄰苯二甲酸酐之混合物、四氫鄰苯二甲酸酐、甲基-四氫鄰苯二甲酸酐、耐地酸酐、甲基耐地酸酐(methyl nadic anhydride)、降莰烷-2,3-二羧酸酐(norbornane-2,3-dicarboxylic anhydride)、甲基降莰烷-2,3-二羧酸酐、甲基環己烯二羧酸酐等。
酸酐系硬化劑等環氧樹脂用硬化劑於熱硬化性樹脂組成物中之調配量相對於式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷100質量份若過少,則有未硬化環氧成分量變得過多之傾向,若過多,則有因剩餘之硬化劑之影響而促進被黏附體材料之腐蝕之傾向,因此較佳為50~120質量份,更佳為60~100質量份。
為了使硬化反應順利地且於短時間內結束,熱硬化性樹脂組成物可含有公知之硬化促進劑。作為較佳之硬化促進劑,可列舉四級鏻鹽系硬化促進劑或咪唑系硬化促進劑。具體而言,可列舉四級鏻之溴化鹽(「U-CAT5003」(商標)、SAN-APRO(股))、2-乙基-4-甲基咪唑等。尤其,作為酸酐系硬化劑用之硬化促進劑,可較佳地使用咪唑系硬化促進劑。於此情形時,咪唑系硬化促進劑之添加量若過少,則有硬化變得不充分之傾向,若過多,則有對於熱、光之變色變大之傾向,因此較佳為使咪唑系硬化促進劑相對於酸酐系硬化劑100質量份為0.20~2.00質量份,更佳為0.60~1.00質量份。
以上所說明之熱硬化性樹脂組成物較佳為儘可能地使用無色透明者。其原因在於:不使異向性導電接著劑中之光反射性導電粒子之光反射效率降低,並且使入射光之光色不改變地被反射。此處,所謂無色透明意指:異向性導電接著劑之硬化物對於波長380~780nm之可見光,其光程長度1mm之透光率(JIS K7105)為80%以上,較佳為90%以上。
<光反射性絕緣粒子>
本發明之光反射性異向性導電接著劑所含有之光反射性絕緣粒子係用以將入射至異向性導電接著劑中之光反射至外部者。
再者,具有光反射性之粒子中包含金屬粒子、對金屬粒子進行樹脂被覆而成之粒子、於自然光下為灰色至白色之金屬氧化物、金屬氮化物、金屬硫化物等無機粒子、經無機粒子被覆樹脂核粒子之粒子、不論
粒子之材質而於其表面存在凹凸之粒子。然而,該等粒子中,考量對本發明中可使用之光反射性絕緣粒子要求顯示絕緣性方面,不包含未經絕緣被覆之金屬粒子。又,金屬氧化物粒子中,不可使用如ITO(indium tin oxides)般具有導電性者。又,即便為顯示光反射性且絕緣性之無機粒子,亦不可使用如SiO2般其折射率低於所使用之熱硬化性樹脂組成物之折射率者。
作為此種光反射性絕緣粒子之較佳具體例,可列舉選自由氧化鈦(TiO2)粒子、氮化硼(BN)粒子、氧化鋅(ZnO)粒子及氧化鋁(Al2O3)粒子所組成之群中之至少一種無機粒子。其中,就高折射率方面而言,較佳為使用TiO2。
作為光反射性絕緣粒子之形狀,可為球狀、鱗片狀、不定形狀、針狀等,若考慮反射效率,則較佳為球狀、鱗片狀。又,關於其大小,於為球狀之情形時,若過小則反射率變低,若過大則有阻礙異向性導電連接之傾向,因此較佳為0.02~20μm,更佳為0.2~1μm;於為鱗片狀之情形時,長徑較佳為0.1~100μm,更佳為1~50μm,短徑較佳為0.01~10μm,更佳為0.1~5μm,厚度較佳為0.01~10μm,更佳為0.1~5μm。
由無機粒子所構成之光反射性絕緣粒子的折射率(JIS K7142)較佳為大於熱硬化性樹脂組成物之硬化物之折射率(JIS K7142),更佳為至少大0.02左右。其原因在於:若折射率差較小,則其等界面上之反射效率降低。
作為光反射性絕緣粒子,可使用以上所說明之無機粒子,亦可使用經透明之絕緣性樹脂被覆鱗片狀或球狀金屬粒子之表面的樹脂被覆金屬粒子。作為金屬粒子,可列舉鎳、銀、鋁等。作為粒子之形狀,可列舉無定型、球狀、鱗片狀、針狀等,其中,就光擴散效果方面而言,較佳為球狀之形狀,就全反射效果方面而言,較佳為鱗片狀之形狀。就光之反射率方面而言,特佳者為鱗片狀銀粒子。
作為光反射性絕緣粒子之樹脂被覆金屬粒子的大小係根據形狀不同亦不相同,但普遍而言若其過大,則有阻礙異向性導電連接之虞,若過小,則會變得難以反射光,因此較佳為於球狀之情形時粒徑為0.1~30μm,更佳為0.2~10μm,於鱗片狀之情形時,長徑較佳為0.1~100μm,更佳為1~50μm,厚度較佳為0.01~10μm,更佳為0.1~5μm。此處,光反射性絕緣粒子之大小於經絕緣被覆之情形時,為亦包含其絕緣被覆之大小。
作為此種樹脂被覆金屬粒子中之該樹脂,可使用各種絕緣性樹脂。就機械強度或透明性等方面而言,可較佳地利用丙烯酸系樹脂之硬化物。較佳為可列舉如下樹脂:於苯甲醯過氧化物等有機過氧化物等自由基起始劑之存在下,使甲基丙烯酸甲酯與甲基丙烯酸2-羥基乙酯進行自由基共聚合而得。於此情形時,更佳為利用2,4-甲苯二異氰酸酯等異氰酸酯系交聯劑來加以交聯。又,作為金屬粒子,較佳為預先利用矽烷偶合劑將γ-縮水甘油氧基或乙烯基等導入至金屬表面。
此種樹脂被覆金屬粒子例如可藉由如下方法進行製造:於甲苯等溶劑中投入金屬粒子與矽烷偶合劑,於室溫下攪拌約1小時之後,投入自由基單體與自由基聚合起始劑、及視需要投入之交聯劑,一面加溫至自由基聚合起始溫度一面進行攪拌。
以上所說明之光反射性絕緣粒子於光反射性異向性導電接著劑中之調配量若過少,則無法實現充分之光反射,又,若過多,則阻礙以併用之導電粒子為基礎之連接,因此於光反射性異向性導電接著劑中,較佳為以1~50體積%、更佳為5~25體積%含有光反射性絕緣粒子。
<導電粒子>
作為構成本發明之光反射性異向性導電接著劑之導電粒子,可利用異向性導電連接用之先前之導電粒子中所使用之金屬之粒子。例如,可列舉
金、鎳、銅、銀、焊錫、鈀、鋁、該等之合金、該等之多層化物(例如,鍍鎳/金閃鍍敷(gold flash plating)物)等。其中,金、鎳、銅會使導電粒子為茶色,因此與其他金屬材料相比,更能得到本發明之效果。
又,作為導電粒子,可使用以金屬材料被覆樹脂粒子而成之金屬被覆樹脂粒子。作為此種樹脂粒子,可列舉苯乙烯系樹脂粒子、苯并胍胺樹脂粒子、尼龍樹脂粒子等。作為以金屬材料被覆樹脂粒子之方法,亦可採用先前公知之方法,可利用無電電鍍法、電解電鍍法等。又,被覆之金屬材料之層厚為足以確保良好之連接可靠性之厚度,亦取決於樹脂粒子之粒徑或金屬之種類,但通常為0.1~3μm。
又,樹脂粒子之粒徑若過小,則產生導通不良,若過大,則有產生圖案間短路之傾向,因此較佳為1~20μm,更佳為3~10μm,特佳為3~5μm。於此情形時,作為核粒子1之形狀,較佳為球狀,但亦可為薄片狀、橄欖球狀。
較佳之金屬被覆樹脂粒子為球狀,若其粒徑過大,則連接可靠性降低,因此較佳為1~20μm,更佳為3~10μm。
尤其,於本發明中,較佳為對如上述般之導電粒子賦予光反射性而製成光反射性導電粒子。圖1A、圖1B係此種光反射性導電粒子10、20之剖面圖。首先,自圖1A之光反射性導電粒子進行說明。
光反射性導電粒子10係由如下部分所構成:經金屬材料被覆之核粒子1;及於其表面由選自氧化鈦(TiO2)粒子、氮化硼(BN)粒子、氧化鋅(ZnO)粒子或氧化鋁(Al2O3)粒子中之至少一種無機粒子2形成的表面光反射層3。氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子係於太陽光下呈現白色之無機粒子。因此,由該等形成之光反射層3呈現白色~灰色。呈現白色~灰色意指反射特性對於可見光之波長相依性較小,且容易反射可見光。
再者,氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中,於擔心硬化之異向性導電接著劑之熱硬化性樹脂組成物的硬化物之光劣化時,可較佳地使用對於光劣化無觸媒性、折射率亦較高之氧化鋅。
核粒子1係用於異向性導電連接,因此其表面由金屬材料構成。此處,作為表面經金屬材料被覆之態樣,如上所述,可列舉核粒子1本身為金屬材料之態樣、或樹脂粒子之表面由金屬材料被覆之態樣。
就與核粒子1之粒徑之相對大小的觀點來看,由無機粒子2所形成之光反射層3的層厚若相對於核粒子1之粒徑過小,則反射率之降低顯著,若過大則產生導通不良,因此較佳為0.5~50%,更佳為1~25%。
又,於光反射性導電粒子10中,構成光反射層3之無機粒子2之粒徑若過小,則難以產生光反射現象,若過大,則有光反射層之形成變得困難之傾向,因此較佳為0.02~4μm,更佳為0.1~1μm,特佳為0.2~0.5μm。於此情形時,就被光反射之光之波長之觀點來看,無機粒子2之粒徑較佳為其光之波長之50%以上,以不透過應被反射之光(即,發光元件發出之光)。於此情形時,作為無機粒子2之形狀,可列舉無定型、球狀、鱗片狀、針狀等,其中,就光擴散效果方面而言,較佳為球狀之形狀,就全反射效果方面而言,較佳為鱗片狀之形狀。
圖1A之光反射性導電粒子10可藉由如下公知之成膜技術(所謂之機械融合法(mechanofusion method))進行製造:藉由使大小之粉末彼此物理性地碰撞而使大粒徑粒子之表面形成由小粒徑粒子所構成之膜。於此情形時,無機粒子2係以咬入核粒子1表面之金屬材料之方式被固定,另一方面,無機粒子彼此難以融著固定,因此無機粒子之單層構成光反射層3。因此,於圖1A之情形時,可認為光反射層3之層厚與無機粒子2之粒徑相同或略薄於其。
繼而,對圖1B之光反射性導電粒子20進行說明。於該光
反射性導電粒子20中,光反射層3含有發揮接著劑功能之熱塑性樹脂4,藉由該熱塑性樹脂4而亦加以固定無機粒子2彼此,於無機粒子2多層化(例如2層或3層地多層化)方面,與圖1A之光反射性導電粒子10不同。藉由含有此種熱塑性樹脂4,光反射層3之機械強度提高,並且難以產生無機粒子之剝落等。
作為熱塑性樹脂4,可謀求環境低負荷而較佳地使用無鹵素型之熱塑性樹脂,例如,可較佳地使用聚乙烯、聚丙烯等聚烯烴,或聚苯乙烯、丙烯酸系樹脂等。
此種光反射性導電粒子20亦可藉由機械融合法製造。機械融合法中所應用之熱塑性樹脂4之粒徑若過小,則接著功能降低,若過大,則難以附著於核粒子1,因此較佳為0.02~4μm,更佳為0.1~1μm。又,此種熱塑性樹脂4之調配量若較少,則接著功能降低,若過多,則形成粒子之凝聚體,因此相對於無機粒子2之100質量份較佳為0.2~500質量份,更佳為4~25質量份。
本發明之光反射性異向性導電接著劑中之光反射性導電粒子等導電粒子之調配量若過少,則有產生導通不良之傾向,若過多,則有產生圖案間短路之傾向,因此,相對於熱硬化性樹脂組成物100質量份,光反射性導電粒子等導電粒子之調配量較佳為1~100質量份,更佳為10~50質量份。
<光反射性異向性導電接著劑之製造>
本發明之光反射性異向性導電接著劑可藉由依照常法將以上所說明之光反射性絕緣粒子、導電粒子及熱硬化性樹脂組成物均勻地混合而製造。又,於製成光反射性異向性導電接著膜之情形時,只要將其等與甲苯等溶劑一併分散混合,以製成所期待之厚度之方式塗佈於經剝離處理之PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)膜上,並於約80℃左右
之溫度下進行乾燥即可。
<光反射性異向性導電接著劑之反射特性>
為了提高發光元件之發光效率,本發明之光反射性異向性導電接著劑之反射特性較理想為光反射性異向性導電接著劑之硬化物對於波長450nm光之反射率(JIS K7105)至少為30%。為了形成此種反射率,適當調整所使用之光反射性絕緣粒子之反射特性或調配量、熱硬化性樹脂組成物之調配組成等即可。通常,若增加反射特性良好之光反射性絕緣粒子之調配量,則有反射率亦增大之傾向。
又,光反射性異向性導電接著劑之反射特性亦可就折射率之觀點進行評價。其原因如下,即,若其硬化物之折射率大於除導電粒子與光反射性絕緣粒子以外之熱硬化性樹脂組成物之硬化物之折射率,則於光反射性絕緣粒子與包圍其之熱硬化性樹脂組成物之硬化物之界面上的光反射量增大。具體而言,期待自光反射性粒子之折射率(JIS K7142)減去熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)而得之差較佳為0.02以上,更佳為0.2以上。再者,通常,以環氧樹脂為主體之熱硬化性樹脂組成物之折射率為約1.5。
<發光裝置>
繼而,一面參照圖2一面對本發明之發光裝置進行說明。發光裝置200係如下之發光裝置:於基板21上之連接端子22、與形成於作為發光元件之LED元件23之n電極24與p電極25各者上的連接用之凸塊26之間,塗佈上述本發明之光反射性異向性導電接著劑,並將基板21與LED元件23進行覆晶構裝。此處,光反射性異向性導電接著劑之硬化物100係使光反射性絕緣粒子或導電粒子、較佳為光反射性導電粒子10分散於熱硬化性樹脂組成物之硬化物11中而成者。再者,視需要亦可利用透明鑄模樹脂以覆蓋LED元件23整體之方式進行密封。又,亦可與先前同樣地於LED元件23
上設置光反射層。
於以此種方式構成之發光裝置200中,LED元件23所發出之光中,朝基板21側發出之光經光反射性異向性導電接著劑之硬化物100中之光反射性絕緣粒子或光反射性導電粒子10反射,而自LED元件23之上表面出射。因此,可防止發光效率之降低。
本發明之發光裝置200中之光反射性異向性導電接著劑以外之構成(LED元件23、凸塊26、基板21、連接端子22等)可設為與先前之發光裝置之構成相同。又,本發明之發光裝置200除使用本發明之光反射性異向性導電接著劑以外,亦可利用先前之異向性導電連接技術進行製造。再者,作為發光元件,除LED元件以外,可於無損本發明之效果之範圍內應用公知之發光元件。
實施例
參考例(二縮水甘油基異氰尿醯基改質聚矽氧烷之製造)
於氮氣氣流中,於具備回流冷卻管與磁攪拌子之100ml三口燒瓶中,投入28.12g(100.00mmol)之1-烯丙基-3,5-二縮水甘油基異氰尿酸酯(MADGIC、四國化成工業(股))、11.31g(40.02mmol)之1,3-雙(三甲基矽烷氧基)-1,3-二甲基二矽氧烷(1,3-bis(trimethylsilyl)-1,3-dimethyldisiloxane,SIB1838.0、Gelest Inc.),於80℃下均勻地攪拌混合物直至熔融。繼而,於該熔融混合物中添加45.0μL之2% Karstedt觸媒溶液(二甲苯溶液),一面攪拌一面加熱至120℃,熔融混合物之溫度到達120℃後,將該溫度保持9小時,使1-烯丙基-3,5-二縮水甘油基異氰尿酸酯與1,3-雙(三甲基矽烷氧基)-1,3-二甲基二矽氧烷進行反應。
反應結束後,將反應混合物進行冷卻,於減壓下(150℃/0.1kPa)將未反應單體蒸餾去除,利用管柱層析法(載體:矽膠,溶出液:乙酸乙酯/己烷混合溶劑)處理殘渣,藉此獲得著色較少之式(1a)之二縮水
甘油基異氰尿醯基改質聚矽氧烷。
實施例1、比較例1-3
藉由將表1所示之調配組成之成分均勻地混合而製備光反射性異向性導電接著劑。
再者,於實施例1中,以環氧基/酸酐之官能基數之比成為1/1.1之方式調配環氧化合物與酸酐系硬化劑。又,比較例2之異向性導電接著劑係於雙液硬化型二甲基聚矽氧樹脂(IVS4742、Momentive Performance Materials公司)中調配有光反射性絕緣粒子與導電粒子而成者,比較例3之異向性導電接著劑係於雙液硬化型苯基聚矽氧樹脂(SCR-1012、信越化學工業(股))中調配有光反射性絕緣粒子與導電粒子而成者。
(評價)
以如下所說明之方式測定所獲得之光反射性異向性導電接著劑之晶片剪力強度。又,以如下所說明之方式對自光反射性異向性導電接著劑去除光反射性絕緣粒子與導電粒子後之殘留熱硬化性樹脂組成物進行耐熱試驗與耐熱光試驗。將所獲得之結果示於表2中。
<晶片剪力強度試驗>
於具有形成有金凸塊(高10μm、直徑80μm、間距190μm)之10μm厚之純銀電極的LED用玻璃環氧基板(特訂品、關西電子工業(股)))上,以直徑成為4mm之方式塗佈硬化性樹脂組成物,並於此處載置0.3mm見方之覆晶型LED元件(GM35R460G、昭和電工(股)),以覆晶型LED元件成為表側之方式將玻璃環氧基板置於保持為80℃之加熱板上,加熱2分鐘而使LED元件暫時固定於LED用玻璃環氧基板上。將該暫時固定有LED元件之LED用玻璃環氧基板應用於熱壓接裝置,一面對LED元件施加80gf/chip之壓力,一面於230℃下進行15秒鐘熱壓接處理,藉此製作於LED用玻璃環氧基板上安裝有LED元件之LED裝置。於使用實施例1或比較例
1之光反射性異向性導電接著劑所製作之LED裝置之情形時,於熱壓接處理後進而進行260℃、20秒之回焊處理。
對以此方式所製作之LED裝置測定晶片剪力強度(gf/chip)。實際使用上期待晶片剪力強度為至少200gf/chip、較佳為250gf/chip以上。
<耐熱試驗>
以於四角配置有1mm高度之間隔柱之2片鋁平板(長100mm×寬50.0mm×厚0.500mm)夾持熱硬化性樹脂組成物,對於實施例1及比較例1之熱硬化性樹脂組成物,首先於120℃下加熱30分鐘,繼而於140℃下加熱1小時,藉此製作硬化樹脂片材。又,對於比較例2及3之熱硬化性樹脂組成物,首先於80℃下加熱1小時,繼而於150℃下加熱2小時,藉此製作硬化樹脂片材。
將所獲得之硬化樹脂片材於設定為150℃之烘箱內放置1000小時,使用分光測色計(CM-3600d、Konica Minolta(股))測定放置前後之分光特性(L*、a*、b*),並根據所獲得之測定值算出色差(△E)。實際使用上期待△E為35以下。
<耐熱光試驗>
製作與供於耐熱試驗之硬化樹脂片材相同之硬化樹脂片材,將其於設定為溫度120℃且光強度16mW/cm2之熱光試驗機(SUPER WIN MINI、DAIPLA WINTES(股);使用金屬鹵化物燈)內放置1000小時,將所獲得之硬化樹脂片材於設定為150℃之烘箱內放置1000小時,使用分光測色計(CM-3600d、Konica Minolta(股))測定放置前後之分光特性(L*、a*、b*),並根據所獲得之測定值算出色差(△E)。實際使用上期待△E為20以下。
由表2可知,實施例1之光反射性異向性導電接著劑係晶片剪力強度、耐熱試驗及耐熱光試驗之結果於實際使用上均較佳者,於比較例1之情形時,係使用熱硬化性環氧樹脂組成物,因此關於晶片剪力強度獲得較佳結果,但未使用式(1a)之二縮水甘油基異氰尿醯基改質聚矽氧烷,因此耐熱試驗未獲得可滿足之結果。
再者,關於比較例2及3,不僅未使用式(1a)之二縮水甘油基異氰尿醯基改質聚矽氧烷,亦未使用熱硬化性環氧樹脂組成物,因此晶片剪力強度明顯較低,無需進行耐熱試驗、耐熱光試驗。
本發明之光反射性異向性導電接著劑於使用異向性導電接著劑將發光二極體(LED)元件等發光元件覆晶構裝於配線板上而製造發光裝置時,即便不設置會使製造成本增大之光反射層於發光元件上,亦可使發光效率不降低。而且,亦可較高地維持晶片剪力強度,且耐熱性、耐熱光性亦優異。因此,本發明之光反射性異向性導電接著劑於對LED元件進行覆晶構裝時有用。
10‧‧‧光反射性導電粒子
11‧‧‧熱硬化性樹脂組成物之硬化物
21‧‧‧基板
22‧‧‧連接端子
23‧‧‧LED元件
24‧‧‧n電極
25‧‧‧P電極
26‧‧‧凸塊
100‧‧‧光反射性異向性導電接著劑之硬化物
200‧‧‧發光裝置
Claims (14)
- 一種光反射性異向性導電接著劑,係用以將發光元件異向性導電連接於配線板者,其特徵在於:含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子,熱硬化性樹脂組成物含有式(1)所表示之二縮水甘油基異氰尿醯基改質聚矽氧烷、及環氧樹脂用硬化劑;
- 如申請專利範圍第1項之光反射性異向性導電接著劑,其中R為甲基,n為1~40之整數。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中熱硬化性樹脂組成物中,相對於式(1)之二縮水甘油基異氰尿醯基改質聚矽氧烷100質量份而含有50~120質量份之環氧樹脂用硬化劑。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中環氧樹脂用硬化劑為酸酐系硬化劑。
- 如申請專利範圍第4項之光反射性異向性導電接著劑,其中熱硬化性樹脂組成物進而含有咪唑系硬化促進劑。
- 如申請專利範圍第5項之光反射性異向性導電接著劑,其中熱硬化性樹脂組成物中,相對於酸酐系硬化劑100質量份含有0.20~2.00質量份之咪唑系硬化促進劑。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中光反 射性絕緣粒子係選自由氧化鈦粒子、氮化硼粒子、氧化鋅粒子及氧化鋁粒子所組成之群中之至少一種無機粒子。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中光反射性絕緣粒子之折射率(JIS K7142)大於熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中光反射性絕緣粒子係經絕緣性樹脂被覆鱗片狀或球狀金屬粒子之表面而成之樹脂被覆金屬粒子。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中光反射性異向性導電接著劑以1~50體積%含有光反射性絕緣粒子。
- 如申請專利範圍第1或2項之光反射性異向性導電接著劑,其中導電粒子係由經金屬材料被覆之核粒子與光反射層所構成之光反射性導電粒子,該光反射層係於該核粒子表面由選自氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中之至少一種無機粒子所形成。
- 如申請專利範圍第11項之光反射性異向性導電接著劑,其中光反射性導電粒子相對於熱硬化性樹脂組成物100質量份之調配量為1~100質量份。
- 一種發光裝置,其係藉由申請專利範圍第1至12項中任一項之光反射性異向性導電接著劑將發光元件以覆晶方式構裝於配線板而成。
- 如申請專利範圍第13項之發光裝置,其中發光元件為發光二極體。
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