TWI636097B - 熱硬化性樹脂組成物、光反射性各向異性導電接著劑及發光裝置 - Google Patents
熱硬化性樹脂組成物、光反射性各向異性導電接著劑及發光裝置 Download PDFInfo
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Classifications
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
- C08G59/3281—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen containing silicon
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Led Device Packages (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Epoxy Resins (AREA)
Abstract
本發明係提供一種熱硬化性樹脂組成物,其係於使用各向異性導電接著劑將發光二極體(LED)元件等發光元件倒晶封裝(flip chip)構裝於配線板而製造發光裝置之際,作為適於不易因熱或光而變色之呈示實用上充分的晶片剪切強度之各向異性導電接著劑的絕緣性接著成分。
本發明之熱硬化性樹脂組成物,係含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑。式(1)中,取代基R係獨立地為烷基或苯基。連結基A獨立地為2價之烴基。取代基R1及R2獨立地為含環氧基的有機基、烷基或芳基,其中R1及R2之至少一者為含環氧基的有機基。
Description
本發明係關於一種熱硬化性樹脂組成物、利用該熱硬化型環氧系接著劑之光反射性各向異性導電接著劑、使用該接著劑將發光元件構裝於配線板而成之發光裝置。
以往,為了防止伴隨於發光二極體(LED)元件之構裝所使用之各向異性導電漿料或各向異性導電膜等之各向異性導電接著劑之絕緣性接著成分之因熱或光所致之變色而使LED元件之發光效率(光取出效率)降低,而試著於各向異性導電漿料或各向異性導電膜中之絕緣性接著成分,採用作為LED密封用樹脂所上市之耐熱性、耐光性優異之2液硬化型甲基聚矽氧樹脂或2液硬化型苯基聚矽氧樹脂(非專利文獻1)。
又,除由防止各向異性導電接著劑之絕緣性接著成分之變色的觀點之外,亦進行藉由於構造上改良LED元件以改善其之發光效率。例如,元件使用發光二極體(LED)元件之舊型發光裝置的構造,係如第5圖所示,以晶粒接合接著劑32於基板31上接合LED元件33,將其上面之p電極34與n電極35以金線37打線(wire bonding)於基板31之連接端子36,並使為以透明模型樹
脂38密封LED元件33整體者;而於第5圖之發光裝置的場合,LED元件33所發出光之中之於上面側射出之400~500nm波長之光係以金線吸收,又,於下面側射出之光的一部分則被晶粒接合接著劑32所吸收,而有LED元件33之發光效率降低的問題,結果如第6圖所示,提案有倒晶封裝(flip chip)構裝LED元件33(專利文獻1)。
於該倒晶封裝構裝技術,係於p電極34與n電極35分別形成凸塊(bump)39,再者,於LED元件33之凸塊形成面,以使p電極34與n電極35絕緣之方式設置光反射層40。然後,LED元件33與基板31,使用各向異性導電漿料41或各向異性導電膜(未圖示),使該等硬化並連接固定。因此,第6圖之發光裝置中,朝LED元件33之上方射出的光不會被金線吸收,朝下方射出之光大致皆被光反射層40反射而朝上方射出,故發光效率(光取出效率)不會降低。
[專利文獻1]日本特開平11-168235號公報
[非專利文獻1]http://www.silicone.jp/j/products/not ice/118/index.shtml
然而,當於各向異性導電接著劑之絕緣性接著成分使用如非專利文獻1所記載之2液硬化型甲基聚矽氧樹脂或2液硬化型苯基聚矽氧樹脂時,雖可抑制因熱或光所致之絕緣性接著成分的變色,但LED元件對構裝基板之剝離強度(晶片剪切(die shear)強度)會有成為不適於實用上的等級之問題。
又,於專利文獻1之技術,必須將光反射層40藉由金屬蒸鍍法等以使p電極34與n電極35為絕緣的方式設置於LED元件33,於製造上會有無法避免成本上升的問題,另一方面,當未設置光反射層40時,硬化後之各向異性導電漿料或各向異性導電膜中之以金、鎳或銅所被覆之導電粒子的表面會呈茶色至暗茶色,又,分散有導電粒子之環氧樹脂黏結劑本身,亦因用以使其硬化之常用的咪唑系潛在性硬化劑而呈茶色,而會有難以使發光元件所發出之光的發光效率(光取出效率)提升之問題。
本發明之第1目的在於,解決以上之先前技術的問題點,而提供一種熱硬化性樹脂組成物,其於使用各向異性導電接著劑將發光二極體(LED)元件等發光元件倒晶封裝構裝於配線板而製造發光裝置之際,作為適於不易因熱或光而變色之呈示實用上充分的晶片剪切強度之各向異性導電接著劑的絕緣性接著成分;再者,本發明之第2目的在於,提供一種光反射性各向異性導電接著劑,即使不於LED元件設置導致製造成本增大之光反射層亦能改善發光效率;並且,提供一種發光裝置,其
係使用上述光反射性各向異性導電接著劑而將發光元件倒晶封裝構裝於配線板所成。
本發明人等,關於第1目的,發現作為各向異性導電接著劑之絕緣性接著成分,藉由使用具有特定構造之含有環氧基的矽氧烷化合物,更具體而言,藉由使用四(二環氧丙基異三聚氰酸基改性矽氧基)矽烷,可防止因熱或光而使各向異性導電接著劑變色,並且,亦呈示實用上充分的晶片剪切強度。又,本發明人等,關於第2目的,發現於只要各向異性導電接著劑本身具有光反射機能,則可不使發光效率降低的假設下,藉由於各向異性導電接著劑摻合光反射性絕緣粒子,可不使發光元件之發光效率降低。然後,根據該等發現而完成本發明。
亦即,本發明為了達成第1目的,提供一種熱硬化性樹脂組成物,其特徵係含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑。
式(1)中,取代基R獨立地為烷基或苯基。連結基A獨立地為2價之烴基。取代基R1及R2獨立地為含環氧基的有機基、烷基或芳基,惟,R1及R2之至少一者為含環氧基的有機基。
又,本發明為了達成第2目的,提供一種光反射性各向異性導電接著劑,其係用以將發光元件各向異性導電連接於配線板所使用之光反射性各向異性導電接著劑,其特徵係含有:含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑之本發明熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子。
又,本發明,作為該光反射性各向異性導電接著劑之特佳樣態,提供一種光反射性各向異性導電接著劑,其中導電粒子係由以金屬材料所被覆之核粒子、與於其表面之包含選自氧化鈦粒子、氮化硼粒子、氧化
鋅粒子或氧化鋁粒子中之至少1種無機粒子所形成之光反射層所構成的光反射性導電粒子。
又,本發明亦提供一種發光裝置,其係透過上述之光反射性各向異性導電接著劑,將發光元件以倒晶封裝方式構裝於配線板所成之發光裝置。
作為用以將發光元件各向異性導電連接於配線板所使用之各向異性導電接著劑之黏結劑有用的本發明之熱硬化性樹脂組成物,含有:以環氧樹脂用硬化劑硬化之以式(1)所示之含有環氧基的矽氧烷化合物。該矽氧烷化合物,具有下述構造:對其中心之矽原子鍵結有4個亞矽烷基氧基,並且於各亞矽烷基氧基之末端,鍵結有以含環氧基的有機基取代之異三聚氰酸基烷基。因此,可防止各向異性導電接著劑因熱或光而變色,並且可實現實用上充分的晶片剪切強度。又,該熱硬化性樹脂組成物,不僅各向異性導電接著劑,亦有用於作為絕緣性接著劑或導電接著劑之黏結劑。
又,本發明之光反射性各向異性導電接著劑,除熱硬化性樹脂組成物的效果之外,由於含有光反射性絕緣粒子,故可將光反射。特別是,當光反射性絕緣粒子,為選自包含氧化鈦、氮化硼、氧化鋅及氧化鋁所構成群組中之至少一種無機粒子、或將鱗片狀或球狀金屬粒子的表面以絕緣性樹脂所被覆之樹脂被覆金屬粒子時,由於粒子本身大致為白色,故對可見光之反射特性的波長依存性小,因此,可提升發光效率,並且可將發
光元件之發光色以原本的色反射。
又,再者,作為導電粒子,當使用由以金屬材料所被覆之核粒子、與在其表面之由氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子所形成之白色~灰色之光反射層所構成的光反射性導電粒子時,由於該光反射性導電粒子本身呈現白色~灰色,故對可見光之反射特性的波長依存性小,因此,可進一步提升發光效率,並且可將發光元件之發光色以原本的色反射。
1‧‧‧核粒子
2‧‧‧無機粒子
3‧‧‧光反射層
4‧‧‧熱可塑性樹脂
10、20‧‧‧光反射性導電粒子
11‧‧‧熱硬化性樹脂組成物之硬化物
21、31‧‧‧基板
22、36‧‧‧連接端子
23、33‧‧‧LED元件
24、34‧‧‧n電極
25、35‧‧‧p電極
26、39‧‧‧凸塊
32‧‧‧晶粒接合接著劑
37‧‧‧金線
38‧‧‧透明模型樹脂
40‧‧‧光反射層
41‧‧‧各向異性導電漿料
100‧‧‧光反射性各向異性導電接著劑之硬化物
200‧‧‧發光裝置
第1A圖係光反射性各向異性導電接著劑用之光反射性導電粒子之截面圖。
第1B圖係光反射性各向異性導電接著劑用之光反射性導電粒子之截面圖。
第2圖係本發明之發光裝置之截面圖。
第3圖係實施例1所製造之式(1a)之含有環氧基的矽氧烷化合物之FT-IR測定圖表。
第4圖係實施例1所製造之式(1a)之含有環氧基的矽氧烷化合物之1H-NMR測定圖表。
第5圖係先前發光裝置之截面圖。
第6圖係先前發光裝置之截面圖。
本發明之熱硬化性樹脂組成物,係含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬
化劑。該熱硬化性樹脂組成物,係有用於作為將發光元件各向異性導電連接於配線板所使用之光反射性各向異性導電接著劑的黏結劑。
<熱硬化性組成物>
如前述,本發明之熱硬化性組成物,係含有式(1)所表示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑。藉由含有式(1)所表示之含有環氧基的矽氧烷化合物,可防止各向異性導電接著劑因熱或光而變色,並且可實現實用上充分的晶片剪切強度。
<取代基R>
式(1)中,R係獨立地為烷基或苯基。由不易變色的觀點而言,以烷基為佳。作為烷基,由對基材之接著性的觀點而言,較佳為碳數1~6之烷基,例如甲基、乙基
、丙基、異丙基、丁基、異丁基、二級丁基、三級丁基、戊基、異戊基、己基,其中,較佳為碳數1~3之低級烷基,例如甲基、乙基、丙基、異丙基。特別是,由對熱、光之耐黃變性的觀點,以甲基為佳。
<連結基A>
A獨立地為2價之烴基,例如,碳數2以上之伸烷基、伸芳基、伸芳烷基,而由不易變色的觀點,以碳數2以上之伸烷基為佳。
作為碳數2以上之伸烷基,例如,以碳數6為止之伸烷基為佳,具體而言,可舉例如伸乙基、伸丙基、伸丁基、伸戊基、伸己基。於該等伸烷基,亦可鍵結有甲基等之烷基。
作為伸芳基,可舉例如,1,4-伸苯基、1,3-伸苯基、1,2-伸苯基、1,4-伸萘基、1,5-伸萘基。較佳為1,4-伸苯基。
作為伸芳烷基,可舉例如,苯基伸乙基、苯基伸丙基。
<取代基R1、R2>
取代基R1、R2獨立地為含環氧基的有機基、烷基或芳基,但R1及R2之至少一者,較佳為兩者為含環氧基的有機基。
作為含環氧基的有機基,可舉例如,環氧丙基、1,2-環氧基-5-己烯基、2,6-二甲基-2,3-環氧基-7-辛烯基、1,2-環氧基-9-癸烯基。其中,由與基材之接著性的觀點考量,以環氧丙基為佳。
因此,以式(1)所示之含有環氧基的矽氧烷化合物之較佳樣態,係取代基R為碳數1~3之低級烷基、連結基A為碳數2~6之伸烷基、取代基R1、R2一同為含環氧基的有機基之樣態。
以式(1)所示之含有環氧基的矽氧烷化合物之特佳樣態,係以下述式(1a)所示之化合物。
以式(1)至(1a)所示之含有環氧基的矽氧烷化合物之熱硬化性樹脂組成物中之含量,若過少則接著性能有降低的傾向,若過多則未硬化環氧基成分增多,故較佳為45~65質量%,更佳為50~60質量%。
又,以式(1)所示之含有環氧基的矽氧烷化合物,可藉由以下之反應式(所謂之矽氫化反應
(hydrosilylation))所示,將式(a)之四(氫亞矽烷基氧基矽烷)、與式(b)之異三聚氰酸酯均勻混合後,於卡斯特(Karstedt)觸媒(1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷鉑(O)錯合物溶液)的存在下,加熱至室溫~150℃來製造。可藉一般方法(濃縮處理、管柱處理等)由反應混合物分離式(1)之化合物。
於化學反應式中,R、A、R1及R2,係如式(1)中所說明。A’,係對應於連結基A之末端烯基。例如,當A為伸乙基時為乙烯基、為伸丙基時為烯丙基、為伸己基時為5-己烯基。
式(1)之含有環氧基的矽氧烷化合物之特佳樣態之式(1a)之化合物,亦可依據以下之反應式,使式
(a’)之四(氫二甲基矽氧基)矽烷、與式(b’)之1-烯丙基-3,5-二環氧丙基異三聚氰酸酯進行矽氫化反應而製造。
本發明之熱硬化性樹脂組成物,除式(1)之含有環氧基的矽氧烷化合物之外,於不損及本發明效果的範圍內,可含有雜環系環氧化合物、脂環式環氧化合物或加氫環氧化合物等。
作為雜環系環氧化合物,可舉例如具有三環之環氧化合物,例如,1,3,5-三(2,3-環氧基丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮(換言之,三環氧丙基異三聚
氰酸酯)。
作為脂環式環氧化合物,較佳可舉例如於分子內具有2個以上環氧基者。該等可為液狀、亦可為固體狀。具體而言,可舉例如環氧丙基六氫雙酚A、3,4-環氧基環己烯基甲基-3’,4’-環氧基環己烯羧酸酯等。其中,由可確保硬化物適於LED元件之構裝等之光透過性、快速硬化性亦優異的觀點而言,較佳可使用環氧丙基六氫雙酚A、3,4-環氧基環己烯基甲基-3’,4’-環氧基環己烯羧酸酯。
作為加氫環氧化合物,可使用前述之雜環系環氧化合物或脂環式環氧化合物之加氫添加物、或其他周知之加氫環氧樹脂。
該等脂環式環氧化合物、雜環系環氧化合物或加氫環氧化合物,相對於式(1)之含有環氧基的矽氧烷化合物,能以單獨併用、亦可併用2種以上。又,除該等環氧化合物之外,只要不損及本發明之效果,亦可併用其他環氧化合物。可舉例如,使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、氫醌、兒茶酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯基酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、參(羥基苯基)甲烷、聯二甲苯酚(bixylenol)、酚醛清漆(phenol novolac)、甲酚醛清漆等多元酚與表氯醇反應所得之環氧丙基醚;使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應所得之聚環氧丙基醚;使對氧苯甲酸、β-
氧萘甲酸(β-oxynaphthoic acid)等之羥基羧酸與表氯醇反應所得之環氧丙基醚酯;由苯二甲酸(phthalic acid)、甲基苯二甲酸、間苯二甲酸、對苯二甲酸、四氫苯二甲酸、內亞甲四氫苯二甲酸、內亞甲六氫苯二甲酸、偏苯三酸、聚合脂肪酸等之多元酸所得之聚環氧丙基酯;由胺苯酚、胺基烷基苯酚所得之環氧丙基胺基環氧丙基醚;由胺基苯甲酸所得之環氧丙基胺基環氧丙基酯;由苯胺、甲苯胺、三溴苯胺、苯二甲二胺、二胺基環己烷、雙胺基甲基環己烷、4,4’-二胺基二苯基甲烷、4,4’-二胺基二苯碸等所得之環氧丙基胺;環氧化聚烯烴等周知之環氧樹脂類。
作為環氧樹脂用硬化劑,可使用周知之環氧樹脂用硬化劑。例如,可由胺系硬化劑、聚醯胺系硬化劑、酸酐系硬化劑、咪唑系硬化劑、聚硫醇系硬化劑、多硫化物(polysulfide)系硬化劑、三氟化硼-胺錯合物系硬化劑、二氰二胺、有機酸醯肼等中選擇使用。其中,由光透過性、耐熱性等之觀點而言,較佳可使用酸酐系硬化劑。
作為酸酐系硬化劑,可舉例如,琥珀酸酐、苯二甲酸酐、馬來酸酐、偏苯三酸酐、六氫苯二甲酸酐、3-甲基-六氫苯二甲酸酐、4-甲基-六氫苯二甲酸酐、或4-甲基-六氫苯二甲酸酐與六氫苯二甲酸酐之混合物、四氫苯二甲酸酐、甲基-四氫苯二甲酸酐、納迪克酸酐(nadic anhydride)、甲基納迪克酸酐、降莰烷-2,3-二羧酸酐、甲基降莰烷-2,3-二羧酸酐、甲基環己烯二羧酸酐等。
酸酐系硬化劑等之環氧樹脂用硬化劑之熱硬化性樹脂組成物中之摻合量,相對於以式(1)所示之含有環氧基的矽氧烷化合物100質量份,若過少則未硬化環氧成分增多,若過多則由於剩餘之硬化劑的影響而有促進被著體材料腐蝕的傾向,故較佳為50~120質量份,更佳為60~100質量份。
本發明之熱硬化性樹脂組成物,為了使硬化反應順利地、且以短時間結束,可含有周知之硬化促進劑。作為較佳的硬化促進劑,可舉例如四級鏻鹽系硬化促進劑或咪唑系硬化促進劑。具體而言,可舉例如四級鏻之溴化物鹽(「U-CAT5003」(商標),San-Apro公司製)、2-乙基-4-甲基咪唑等。特別是,作為酸酐系硬化劑用之硬化促進劑,較佳可使用咪唑系硬化促進劑。於該場合,咪唑系硬化促進劑之添加量,若過少則會有硬化不足的傾向,若過多則對熱、光之變色會有增大的傾向,故相對於酸酐系硬化劑100質量份,咪唑系硬化促進劑較佳為0.20~2.00質量份,更佳為0.60~1.00質量份。
以上說明之本發明之熱硬化性樹脂組成物,當作為用以構裝發光元件之光反射性各向異性導電接著劑之絕緣性接著成分的黏結劑使用時,盡可能以無色透明為佳。其係因不使光反射性各向異性導電接著劑之光反射導電粒子之光反射效率降低、並且以不改變入色光的光色來反射之故。此處,所謂無色透明,係意指光反射性各向異性導電接著劑之硬化物,對於波長380~780nm之可見光之光徑長度1mm之光透過率(JIS K7105)
為80%以上,較佳為90%以上。
本發明之熱硬化性樹脂組成物,可藉由將式(1)之含有環氧基的矽氧烷化合物與環氧用硬化劑、與視需要所摻合之其他成分,以周知之手法混合來製造。
接著,說明用以將發光元件各向異性導電連接於配線板所使用之本發明光反射性各向異性導電接著劑。該光反射性各向異性導電接著劑,其係含有熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子,其中熱硬化性樹脂組成物其特徵係含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑之本發明熱硬化性樹脂組成物。
<光反射性絕緣粒子>
含有本發明之光反射性各向異性導電接著劑之光反射性絕緣粒子,係用以將入射於各向異性導電接著劑之光反射至外部者。
又,具有光反射性之粒子,包含金屬粒子、以樹脂被覆金屬粒子之粒子、自然光下為灰色至白色之金屬氧化物、金屬氮化物、金屬硫化物等之無機粒子、將樹脂核粒子以無機粒子被覆之粒子,無拘於例子之材質,其之表面具有凹凸之粒子。然而,該等粒子之中,於本發明可使用之光反射性絕緣粒子,由期望呈示絕緣性的關係上,不含未絕緣被覆之金屬粒子。又,金屬氧化物粒子之中,無法使用如ITO之具有導電性者。又,即使呈示光反射性且絕緣性之無機粒子,亦無法使用如SiO2等之其折射率較所使用的熱硬化性樹脂組成物之折
射率低者。
作為如此的光反射性絕緣粒子的較佳具體例,可舉例如選自氧化鈦(TiO2)、氮化硼(BN)、氧化鋅(ZnO)及氧化鋁(Al2O3)所構成群組中之至少一種無機粒子。其中,由高折射率的觀點而言,以使用TiO2為佳。
作為光反射性絕緣粒子之形狀,可為球狀、鱗片狀、不定形條、針狀等,而若考量反射效率,則以球狀、鱗片狀為佳。又,就其之大小而言,當為球狀時,若過小則反射率降低,若過大則有阻礙各向異性導電粒子所致之連接的傾向,故較佳為0.02~20μm,更佳為0.2~1μm;當為鱗片狀時,長徑較佳為0.1~100μm,更佳為1~50μm,短徑較佳為0.01~10μm,更佳為0.1~5μm,厚度較佳為0.01~10μm,更佳為0.1~5μm。
無機粒子所構成之光反射性絕緣粒子,其之折射率(JIS K7142)較佳為大於熱硬化性樹脂組成物之硬化物之折射率(JIS K7142),更佳為至少大0.02左右。其係因折射率差若小則於該等之界面之反射效率降低之故。
作為光反射性絕緣粒子,可使用以上所說明之無機粒子,亦可使用將鱗片狀或球狀金屬粒子之表面以透明的絕緣性樹脂被覆之樹脂被覆金屬粒子。就金屬粒子而言,可舉例如鎳、銀、鋁等。就粒子之形狀而言,可舉例如無定型、球狀、鱗片狀、針狀等;惟,其中,由光擴散效果的觀點而言,以球狀為佳;而由全反射效果的觀點而言,以鱗片狀的形狀為佳。特別是,由光
之反射率的觀點而言,以鱗片狀銀粒子或球狀銀粒子為佳。
作為光反射性絕緣粒子之樹脂被覆金屬粒子之大小,雖隨形狀而異,但一般而言若過大,則會有阻礙各向異性導電粒子所致之連接之虞,而若過小則難以將光反射,故當為球狀時,粒徑較佳為0.1~30μm,更佳為0.2~10μm,當為鱗片狀時,長徑較佳為0.1~100μm,更佳為1~50μm,厚度較佳為0.01~10μm,更佳為0.1~5μm。此處,光反射性絕緣粒子之大小,當以絕緣被覆時,係亦包含絕緣被覆的大小。
就如此的樹脂被覆金屬粒子中之該樹脂而言,可使用各種絕緣性樹脂。由機械強度及透明性等之觀點而言,較佳可利用丙烯酸系樹脂之硬化物。較佳可舉例如,於過氧化苯甲醯等之有機過氧化物等之自由基起始劑的存在下,使甲基丙烯酸甲酯與甲基丙烯酸2-羥基乙酯自由基共聚合之樹脂。於該場合,更佳為,以2,4-甲苯二異氰酸酯等之異氰酸酯系交聯劑交聯。又,就金屬粒子而言,較佳為事先以矽烷耦合劑將γ-環氧丙氧基或乙烯基等導入金屬表面。
如此的樹脂被覆金屬粒子,例如,可將金屬粒子與矽烷耦合劑投入甲苯等之溶劑中,室溫下攪拌約1小時後,投入自由基單體與自由基聚合起始劑、與視需要之交聯劑,邊加溫至自由基聚合起始溫度邊進行攪拌,藉此來製造。
以上說明之光反射性絕緣粒子之於光反射性
各向異性導電接著劑之摻合量,若過少則無法實現充分的光反射,又,若過少則會阻礙所併用之導電粒子所致之連接,故光反射性各向異性導電接著劑中之光反射性絕緣粒子,較佳為1~50體積%,更佳為5~25體積%。
<導電粒子>
就構成本發明之光反射性各向異性導電接著劑之導電粒子而言,可利用各向異性導電連接用之先前導電粒子所使用之金屬的粒子。可舉例如,金、鎳、銅、銀、焊錫(solder)、鈀、鋁、該等之合金、該等之多層化物(例如,鍍鎳/閃鍍金物)等。其中,由於金、鎳、銅,會使導電粒子變成茶色,故可較其他金屬更能享受本發明之效果。
又,作為導電粒子,可使用將樹脂粒子以金屬材料被覆之金屬被覆樹脂粒子。如此的樹脂粒子,可舉例如苯乙烯系樹脂粒子、苯并胍胺樹脂粒子、耐綸樹脂粒子等。將樹脂粒子以金屬材料被覆之方法,可採用習知之方法、亦可利用無電鍍法(electroless plating)、電解鍍敷法等。又,所被覆之金屬材料之層厚,係能足以確保良好之連接可靠性的厚度,雖亦視樹脂粒子之粒徑或金屬之種類,但通常為0.1~3μm。
又,樹脂之粒徑,若過小則產生導通不良,若過大則圖型間會有產生短路的傾向,故較佳為1~20μm,更佳為3~10μm,特佳為3~5μm。於該場合,就核粒子1之形狀而言較佳為球形,而亦可為薄片狀、橄欖球狀。
較佳的金屬被覆樹脂粒子為球狀形狀,其之粒徑若過大則連接可靠性降低,故較佳為1~20μm,更佳為3~10μm。
特別是,本發明中,較佳為,作成如上述對導電粒子賦予光反射性之光反射性導電粒子。第1A圖、第1B圖,係如此的光反射性導電粒子10、20之截面圖。首先,由第1A圖之光反射性導電粒子開始說明。
光反射性導電粒子10,係由以金屬材料所被覆之核粒子1、與其表面之由選自氧化鈦(TiO2)粒子、氮化硼(BN)粒子、氧化鋅(ZnO)粒子或氧化鋁(Al2O3)粒子中之至少1種無機粒子2所形成之光反射層3所構成。氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子,係於太陽光下呈白色的無機粒子。因此,由該等所形成之光反射層3係呈白色~灰色。呈白色~灰色,表示對可見光之反射特性的波長依存性小、且容易反射可見光。
又,氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子之中,當對硬化後之光反射性各向異性導電接著劑之熱硬化性樹脂組成物之硬化物的光劣化有懸念時,較佳可使用對光劣化無催化性、折射率亦高之氧化鋅粒子。
核粒子1,係一同各向異性導電連接者,故其之表面係以金屬材料構成。此處,表面以金屬材料被覆之樣態,如前述,可舉例如,核粒子1本身為金屬材料之樣態、或樹脂粒子之表面以金屬材料被覆之樣態。
無機粒子2所形成之光反射層3之層厚,由與
核粒子1之粒徑之相對大小的觀點考量,相對於核粒子1之粒徑,若過小則反射率顯著降低,若過大則會產生導通不良,故較佳為0.5~50%,更佳為1~25%。
又,光反射性導電粒子10中,構成光反射層3之無機粒子2之粒徑,若過小則難以產生光反射現象,若過大則會有難以形成光反射層的傾向,故較佳為0.02~4μm,更佳為0.1~1μm,特佳為0.2~0.5μm。於該場合,由所光反射之光之波長的觀點考量,無機粒子2之粒徑,為了不使應反射之光(亦即,發光元件所發出之光)透過消失,較佳為該光之波長之50%以上。於該場合,無機粒子2之形狀可舉例如無定型、球狀、鱗片狀、針狀等,但其中,由光擴散效果的觀點以球狀為佳,而由全反射效果的觀點,以鱗片狀的形狀為佳。
第1A圖之光反射性導電粒子10,可藉由將大小之粉末彼此物理地碰撞以於大粒徑粒子之表面形成小粒徑粒子所構成之膜的周知成膜技術(所謂之機械融合法)來製造。於該場合,無機粒子2,係以侵入核粒子1之表面之金屬材料的方式來固定,另一方面,由於無機粒子彼此難以熔接固定,故係以無機粒子之單層構成光反射層3。因此,第1圖之情況,光反射層3之層厚,可推測為與無機粒子2之粒徑同等或些微薄一點。
接著,說明第1B圖之光反射性導電粒子20。於該光反射性導電粒子20中,光反射層3含有作為接著劑功能的熱可塑性樹脂4,藉由該熱可塑性樹脂4使無機粒子2彼此也固定,而於無機粒子2為多層化(例如多層化為
2層或3層)方面係與第1A圖之光反射性導電粒子10相異。藉由含有如此的熱可塑性樹脂4,光反射層3之機械強度提升、不易產生無機粒子之剝落。
熱可塑性樹脂4,為了成為環境低負荷而較佳為使用無鹵素之熱可塑性樹脂,例如,可使用聚乙烯、聚丙烯等之聚烯烴或聚苯乙烯、丙烯酸樹脂等。
如此的光反射性導電粒子20,亦可藉由機械融合法製造。適用於機械融合法之熱可塑性樹脂4之粒徑,若過小則接著機能降低,若過大則難以附著於核粒子,故較佳為0.02~4μm,更佳為0.1~1μm。又,如此的熱可塑性樹脂4之摻合量,若過少則接著機能降低,若過多則會形成粒子之凝集體,故相對於100質量份之無機粒子2,較佳為0.2~500質量份,更佳為4~25質量份。
本發明之光反射性各向異性導電接著劑中之光反射性導電粒子等之導電粒子的摻合量,若過少則會有產生導通不良的傾向,若過多則圖型間會有產生短路的傾向,故相對於熱硬化性樹脂組成物100質量份,光反射性導電粒子等之導電粒子的摻合量,較佳為1~100質量份,更佳為10~50質量份。
<光反射性各向異性導電接著劑之製造>
本發明之光反射性各向異性導電接著劑,可藉由將以上說明之光反射性絕緣粒子、導電粒子與熱硬化性樹脂組成物,依一般方法均勻混合來製造。又,當欲作成光反射性各向異性導電膜時,將該等與甲苯等溶劑一同分散混合,於經剝離處理之PET薄膜塗布成所欲之厚度
,以約80℃左右之溫度乾燥即可。
<光反射性各向異性導電接著劑之反射特性>
本發明之光反射性各向異性導電接著劑之反射特性,為了使發光元件之發光效率提升,較佳為,光反射性各向異性導電接著劑之硬化物之對於波長450nm之反射率(JIS K7105)至少為30%。為了成為如此的反射率,可適當地調整所使用之光反射性導電粒子之反射特性或摻合量、熱硬化性樹脂組成物之摻合組成等。通常,只要將反射特性良好之光反射性導電粒子之摻合量增量,則反射率亦有增大的傾向。
又,光反射性各向異性導電接著劑之反射特性,亦可由折射率的觀點評價。亦即,其之硬化物之折射率,若較除去導電粒子與光反射性絕緣粒子之熱硬化性樹脂組成物之硬化物的折射率大,則於光反射性絕緣粒子與將其捲繞之熱硬化性樹脂組成物之硬化物之界面的光反射量增大。具體而言,光反射性粒子之折射率(JIS K7142)減去熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)的差,較佳為0.02以上,更佳為0.2以上。又,通常以環氧樹脂為主體之熱硬化性樹脂組成物之折射率為約1.5。
<發光裝置>
接著,參照第2圖說明本發明之發光裝置。發光裝置200,係於基板21上之連接端子22、與分別形成於發光元件之LED元件23之n電極24與p電極25之連接用之凸塊26之間,塗布前述之本發明之光反射性各向異性導電接著
劑,以將基板21與LED元件23倒晶封裝構裝之發光裝置。此處,光反射性各向異性導電接著劑之硬化物100,係光反射性絕緣粒子10分散於熱硬化性樹脂組成物之硬化物11中所成者。又,視需要,亦可以被覆LED元件23整體的方式以透明模型樹脂密封。又,亦可與以往同樣地於LED元件23設置光反射層。
如此所構成之發光裝置200中,LED元件23所發出之光中之朝基板21側所發出之光,係被光反射性各向異性導電接著劑之硬化物100中之光反射性絕緣粒子10反射,而朝LED元件23之上面射出。因此,可防止發光效率之降低。
本發明之發光裝置200中之光反射性各向異性導電接著劑之外之構成(LED元件23、凸塊26、基板21、連接端子22等),可與先前發光裝置之構成相同。又,本發明之發光裝置200,除使用本發明之光反射性各向異性導電接著劑以外,可利用先前各向異性導電連接技術來製造。又,就發光元件而言,除LED元件之外,於不損及本發明效果之範圍內亦可適用周知之發光元件。
參考例(式(1a)之含有環氧基的矽氧烷化合物之製造)
於氮氣流中,於具備回流冷卻管與磁性攪拌子之100ml三口燒瓶,投入28.37g(100.88mmol)之1-烯丙基-3,5-二環氧丙基異三聚氰酸酯(MADGIC,四國化成工業(股))、與6.63g(20.17mmol)之四(氫二甲基矽氧基)矽烷
(SIT7278.0,Gelest Inc.),將混合物以80℃攪拌至均勻熔融。接著,於該熔融混合物添加2%Karstedt觸媒溶液(二甲苯溶液)30.2μL,於攪拌之下加熱至140℃,於熔融混合物之溫度到達140℃之後,保持於該溫度9小時,使1-烯丙基-3,5-二環氧丙基異三聚氰酸酯與四(氫二甲基矽氧基)矽烷產生反應。
反應結束後,將反應混合物冷卻,將未反應單體於減壓下(150℃/0.1kPa)蒸餾除去,製得式(1a)之含有環氧基的矽氧烷化合物。
<矽氫化反應之進行程度評價>
為了確定矽氫化反應之進行情況,以以下所說明之方式進行FT-IR測定與1H-NMR測定。
(FT-IR測定)
分別對矽氫化反應之減壓蒸餾殘渣、及原料之1-烯丙基-3,5-二環氧丙基異三聚氰酸酯(MADGIC)與四(氫二甲基矽氧基)矽烷(SIT7278.0),進行FT-IR測定(測定裝置:傅立葉轉換紅外線分光光度計FT-IR-460PLUS,日本分光(股)製),將所得之結果示於第3圖。對於原料之四(氫二甲基矽氧基)矽烷(SIT7278.0),檢測出Si-H基特有之光譜之2140cm-1附近之伸縮波峰、900cm-1附近之彎曲振動波峰。又,於1690cm-1及1460cm-1附近,檢測出來自異三聚氰酸酯之尖銳之羰基伸縮波峰。關於反應物之減壓蒸餾殘渣,則未檢測出Si-H基所特有之2140cm-1附近與900cm-1附近之波峰,另一方面,亦未檢測出來自異三聚氰酸酯之1690cm-1及1460cm-1附近之波峰。
因此,可確認生成有式(1a)之含有環氧基的矽氧烷化合物。亦即,亦可確認矽氫化(氫矽化(hydrosilyl)反應)結束。
(1H-NMR測定)
對矽氫化反應之減壓蒸餾殘渣,進行1H-NMR測定(測定裝置:MERCURY300,VARIAN製),將所得之結果示於第4圖。於化學位移0ppm附近,觀測到來自聚矽氧之Si-Me基所對應之訊號。又,於化學位移4.12~2.66ppm,確認到多數來自環氧丙基異三聚氰酸酯之訊號。另一方面,皆未確認到烯丙基之α、β位碳相鄰質子可見之特有之訊號與Si-H基之訊號(兩者化學位移皆為6.00~5.00ppm)。
因此,可確認生成有式(1a)之含有環氧基的矽氧烷化合物。亦即,亦可確認矽氫化(矽氫化反應)結束。又,藉由控制MADGIC之投入量,能期待可意圖地製造殘存有部分Si-H基之化合物。
實施例1
藉由使用所得之含有環氧基的矽氧烷化合物並將表1所示之摻合組成的成分均勻混合,以調製成作為絕緣性接著劑之本發明之熱硬化性樹脂組成物。又,於實施例1中,係以使環氧基/酸酐之官能基數之比為1/1.1的方式摻合環氧化合物與酸酐系硬化劑。
比較例1~3
又,比較例1之作為絕緣性接著劑之熱硬化性樹脂組成物,係使用1,3,5-三環氧丙基異三聚氰酸酯取代式(1a)之含有環氧基的矽氧烷化合物作為環氧化合物之例;比較例2之作為絕緣性接著劑之熱硬化性樹脂組成物,為2液硬化型二甲基聚矽氧樹脂(IVS4742,Momentive Materials公司);比較例3之作為絕緣性接著劑之熱硬化性樹脂組成物,為2液硬化型苯基聚矽氧樹脂(SCR-1012,信越化學工業(股))。
<評價>
針對所得之作為絕緣性接著劑之熱硬化性樹脂組成物,進行晶片剪切強度試驗、耐熱試驗與耐熱光試驗。將所得之結果示於表2。
<晶片剪切強度試驗>
於具有形成有金凸塊(高10μm、直徑80μm、間距190μm)之10μm厚之銀固體電極的LED用玻璃環氧基板(訂製品,關西電子工業(股)),以使直徑為4mm的方式塗布絕緣性接著劑,於其乘載0.3mm邊長之倒晶封裝型LED元件(GM35R460G,昭和電工(股)),以使倒晶封裝型LED元件為表側的方式將玻璃環氧基板置於保持為80℃之加熱板,加熱2分鐘以將LED元件暫時固定於LED用玻璃環氧基板。將該暫時固定有該LED元件之LED用玻璃環氧基板使用於熱壓接裝置,於對LED元件施加80gf/chip之壓力之下以230℃進行熱壓接處理15秒,藉此製作成於LED用玻璃環氧基板構裝有LED元件之LED裝置。當為使用實施例1或比較例1之絕緣性接著劑所製作之LED裝置時,於熱壓接處理後,再進行260℃、20秒之迴流焊(reflow)處理。
對如此製作之LED裝置,測定晶片剪切強度(gf/chip)。實用上,晶片剪切強度至少為200gf/chip,較佳為250gf/chip以上。
<耐熱試驗>
以於四角配置有高度1mm之間隔物之2片鋁平板(長100mm×寬50.0mm×厚0.50mm)夾持絕緣性接著劑,對實施例1及比較例1之絕緣性接著劑,首先以120℃加熱30
分鐘,接著以140℃加熱1小時,藉此製作成硬化樹脂薄片樣品。又,對比較例2及3之絕緣性接著劑,首先以80℃加熱1小時,接著以150℃加熱2小時,藉此製作成硬化樹脂薄片樣品。
將所得之硬化樹脂薄片樣品,放置於設定為150℃之烘箱內1000小時,使用分光測色計(CM-3600d,柯尼卡美能達精密光學(股))測定放置前後之分光特性(L*、a*、b*),由所得之測定值計算出色差(△E)。實用上,△E以35以下為佳。
<耐熱光試驗>
製作與供以耐熱試驗之硬化樹脂薄片樣品同樣的硬化樹脂薄片樣品,將其放置於設定為溫度120℃、光強度16mW/cm2之熱光試驗機(SUPER WIN MINI,DAYPLA WINTES(股);使用金屬鹵素燈)內1000小時,將所得之硬化樹脂薄片,放置於設定為150℃之烘箱內1000小時,使用分光測色計(CM-3600d,柯尼卡美能達精密光學(股))測定放置前後之分光特性(L*、a*、b*),由所得之測定值計算出色差(△E)。實用上,△E以20以下為佳。
由表2可知,使用實施例1之含有環氧基的矽氧烷化合物作為硬化成分之硬化樹脂薄片樣品,於晶片剪切強度試驗、耐熱試驗與耐熱光試驗之結果皆為實用
上較佳者,而比較例1之情況,由於係使用熱硬化性環氧樹脂組成物,故雖於晶片剪切強度試驗得到較佳結果,但由於未使用式(1a)之含有環氧基的矽氧烷化合物,故於耐熱試驗未得到可滿足的結果。
又,關於比較例2及3,不僅未使用式(1a)之含有環氧基的矽氧烷化合物,亦未使用熱硬化性環氧樹脂組成物,故晶片剪切強度顯著降低,並不足以進行耐熱試驗、耐熱光試驗。
實施例2
相對於作為絕緣性接著劑之實施例1之熱硬化性樹脂組成物100質量份,將24.0質量份光反射性絕緣粒子(平均粒徑0.5μm之二氧化鈦酸粉末(KR-380,鈦工業(股)))、與5.00質量份導電粒子(平均粒徑0.5μm之金被覆樹脂導電粒子(於平均例徑4.6μm之球狀丙烯酸樹脂粒子施以0.2μm厚之無電解鍍金的粒子(萊德20GNB4,日本化學工業(股)))均勻地混合,藉此調製成實施例2之光反射性各向異性導電接著劑。
比較例4
除未使用光反射性絕緣粒子以外,藉由與實施例4同樣之操作調製成各向異性導電接著劑。
(評價)
以以下所說明之方式測定所得之光反射性各向異性導電接著劑之光反射率評價試驗、LED構裝樣品中之總光束量評價試驗。
(光反射率評價試驗)
將所得之實施例2及比較例4之各向異性導電接著劑,以使乾燥厚度為100μm的方式塗布於陶瓷製之白色板,以200℃加熱1分鐘,使其硬化。針對該硬化物,使用分光光度計(U3300,日立製作所(股)),測定對波長450nm之光的反射率(JIS K7150)。反射率實用上為30%以上,而實施例2之光反射性各向異性導電接著劑呈示超過30%之反射率,相對於此,比較例4之各向異性導電接著劑,未呈示超過30%的反射率。
(LED構裝樣品中之總光束量評價試驗)
於具有對100μm間距之銅配線施以Ni/Au(5.0μm厚/0.3μm厚)鍍敷處理之配線的玻璃環氧基板,使用凸塊接合器(FB700,Kaijo(股))形成高度15μm之金凸塊。於該附有金凸塊之環氧基板,使用實施例2之光反射性各向異性導電接著劑或比較例4之各向異性導電接著劑,將藍色LED(Vf=3.2(If=20mA))以200℃、60秒鐘、1Kg/晶片之條件倒晶封裝構裝,製得試驗用LED模組。
針對所得之試驗用LED模組,使用總光束測定系統(積分球)(LE-2100,大塚電子股份有限公司)測定總光束量(測定條件If=20mA(定電流控制))。總光束量,實用上以300mlm以上為佳,而實施例2之光反射性各向異性導電接著劑呈示超過300mlm之反射率,相對於此,比較例4之各向異性導電接著劑未呈示超過300mlm之反射率。
本發明之熱硬化性樹脂組成物、以及含有其
作為絕緣性接著成分之光反射性各向異性導電接著劑,於使用各向異性導電接著劑將發光二極體(LED)元件等發光元件倒晶封裝構裝於配線板而製造發光裝置之際,即使未將會導致製造成本增大之光反射層設置於發光元件,亦能不使發光效率降低。並且,亦可維持高晶片剪切強度且耐熱性、耐熱光性亦優異。因此,本發明之熱硬化性樹脂組成物及光反射性各向異性導電接著劑,於將LED元件倒晶封裝進行構裝之際為有用。
Claims (15)
- 一種熱硬化性樹脂組成物,其特徵係:含有以式(1)所示之含有環氧基的矽氧烷化合物、與環氧樹脂用硬化劑;
- 如請求項1之熱硬化性樹脂組成物,其中,取代基R為碳數1~3之低級烷基,連結基A為碳數2~6之伸烷基,取代基R1、R2同時為含環氧基的有機基。
- 如請求項2之熱硬化性樹脂組成物,其中,取代基R為 甲基,連結基A為伸丙基,取代基R1、R2同時為環氧丙基。
- 如請求項1至3中任一項之熱硬化性樹脂組成物,其中,環氧樹脂用硬化劑係酸酐系硬化劑。
- 如請求項4之熱硬化性樹脂組成物,其進一步含有咪唑系硬化促進劑。
- 如請求項5之熱硬化性樹脂組成物,其中,相對於100質量份之酸酐系硬化劑,含有0.20~2.00質量份之咪唑系硬化促進劑。
- 一種光反射性各向異性導電接著劑,其係用以將發光元件各向異性導電連接於配線板所使用之光反射性各向異性導電接著劑;其特徵係:含有如請求項1至6中任一項之熱硬化性樹脂組成物、導電粒子及光反射性絕緣粒子。
- 如請求項7之光反射性各向異性導電接著劑,其中,光反射性絕緣粒子係選自包含氧化鈦、氮化硼、氧化鋅及氧化鋁所構成群組中之至少一種無機粒子。
- 如請求項7或8之光反射性各向異性導電接著劑,其中,光反射性絕緣粒子之折射率(JIS K7142)較熱硬化性樹脂組成物之硬化物之折射率(JIS K7142)大。
- 如請求項7或8之光反射性各向異性導電接著劑,其中,光反射性絕緣粒子係將鱗片狀或球狀銀粒子的表面以絕緣性樹脂所被覆而成之樹脂被覆金屬粒子。
- 如請求項7或8之光反射性各向異性導電接著劑,其中,光反射性各向異性導電接著劑係以1~50體積%含有 光反射性絕緣粒子。
- 如請求項7或8之光反射性各向異性導電接著劑,其中,導電粒子係包含以金屬材料所被覆之核粒子、與於其表面之由選自氧化鈦粒子、氮化硼粒子、氧化鋅粒子或氧化鋁粒子中之至少1種無機粒子所形成之光反射層所構成的光反射性導電粒子。
- 如請求項12之光反射性各向異性導電接著劑,其中,相對於100質量份熱硬化性樹脂組成物,光反射性導電粒子的摻合量為1~100質量份。
- 一種發光裝置,其係藉由如請求項7至13中任一項之光反射性各向異性導電接著劑,並將發光元件以倒晶封裝方式構裝於配線板而成。
- 如請求項14之發光裝置,其中,發光元件係發光二極體。
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