TWI424074B - Ti-Nb-based sintered body sputtering target, Ti-Nb-based oxide thin film, and method for producing the same - Google Patents

Ti-Nb-based sintered body sputtering target, Ti-Nb-based oxide thin film, and method for producing the same Download PDF

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TWI424074B
TWI424074B TW099109053A TW99109053A TWI424074B TW I424074 B TWI424074 B TW I424074B TW 099109053 A TW099109053 A TW 099109053A TW 99109053 A TW99109053 A TW 99109053A TW I424074 B TWI424074 B TW I424074B
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film
based oxide
refractive index
less
oxygen
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TW201035347A (en
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Hideo Takami
Masataka Yahagi
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Jx Nippon Mining & Metals Corp
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Description

Ti-Nb系氧化物燒結體濺鍍靶、Ti-Nb系氧化物薄膜及該薄膜之製造方法
本發明係關於一種能高速形成具有高折射率且低消光係數之薄膜的Ti-Nb系氧化物燒結體濺鍍靶、Ti-Nb系氧化物薄膜及該薄膜之製造方法。
近年來，開發一種無需磁頭而可覆寫之高密度光資訊記錄媒體的高密度記錄光碟技術，並急速地商品化。特別是CD-RW係作為可覆寫之CD出現於1977年，為目前最普及之相變化光碟。該CD-RW之覆寫次數為1000次左右。
又，作為DVD用途，DVD-RW被開發並被商品化，該碟片之層結構基本上與CD-RW相同或類似。其覆寫次數為1000～10000次左右。
該等係藉由照射光束，產生記錄材料之透射率、反射率等之光學變化，而進行資訊之記錄、播放、追記，為急速普及之電子零件。
通常，用於CD-RW或DVD-RW等之相變化光碟為四層結構：利用ZnS‧SiO2 等高熔點介電體之保護層，夾持Ag-In-Sb-Te系或Ge-Sb-Te系等之記錄薄膜層之兩側，並且設置銀或銀合金或者鋁合金反射膜。又，為了提高重複次數，視需要可於記憶體層與保護層之間加入界面層等。
反射層與保護層除了要求增大記錄層之非晶部與結晶部之反射率之差的光學性功能外，還要求記錄薄膜之耐濕性或防止因熱而變形之功能，並且要求控制記錄時之熱條件之功能(參照非專利文獻1)。
最近，為使大容量、高密度之記錄成為可能，而提出有單面2層光記錄媒體(參照專利文獻1)。該專利文獻1中，自雷射光之入射方向，具有形成於基板1上之第一資訊層以及形成於基板2上之第二資訊層，該等透過中間層而以資訊膜相互相對之方式貼合。
於此情形時，第一資訊層由記錄層與第1金屬反射層所構成，第二資訊層由第1保護層、第2保護層、記錄層、第2金屬反射層所構成。此外，亦可任意形成保護不受損傷、污垢等之硬塗層、熱擴散層等層。又，對該等之保護層、記錄層、反射層等提出多種材料。
由高熔點介電體所構成之保護層必須對因升溫與冷卻所致之熱的反覆應力具有耐性，並且要使該等熱影響不會對反射膜或其他部位造成影響，且其本身亦要薄，具有低反射率且不會變質之強韌性。於該含義中，介電體保護層具有重要之作用。又，當然，無須論證記錄層、反射層、干涉膜層等在上述之CD、DVD等之電子零件中，在發揮各自之功能的含義上，亦同樣重要。
該等多層結構之各薄膜，通常係藉由濺鍍法而形成。該濺鍍法係利用以下原理：使由正電極與負電極所構成之基板與靶相對向，於惰性氣體環境氣氛下，在該等基板與靶之間施加高電壓而產生電場，此時電離之電子與惰性氣體碰撞而形成電漿，該電漿中之陽離子衝撞於靶(負電極)之表面而撞出靶構成原子，該飛出之原子附著於相對向之基板表面而形成膜。
於此種背景下，提出使用氧化鈦(TiOx )之靶作為用以形成熱線反射膜、抗反射膜之濺鍍靶(參照專利文獻2)。於此情形時，為了使濺鍍時之放電穩定，而將比電阻值設定為0.35Ωcm以下，並使DC濺鍍成為可能，而獲得高折射率之膜。然而，由於膜之透射率下降，因此進一步採取導入氧使氧含量達到35重量%以上之策略。
然而，該氧之導入會有問題，有成膜速度下降之缺點。因此，雖欲添加其他物質以謀求提高成膜速度，但適用作為要求折射率高、吸收少之膜的精密光學構件與電子零件，特別是於400nm附近之短波長側會有問題。因此，氧化鈦靶之成膜速度之下降呈未解決之狀態。
此外，提出有形成由氧化鈦與氧化鈮或氧化鉭所構成之膜來作為高折射率介電體膜之技術(參照專利文獻3)。但，於此情形時，係藉由以鈦與鈮之合金或混合物作為靶，於含有氧氣之環境氣氛中(反應性)進行濺鍍所形成。其結果，有記載所得之高折射率介電體膜之折射率在2.5以下。於此情形時，會產生難以藉由反應濺鍍來得到穩定之膜特性的問題，及光記錄媒體中重要之消光係數變高的問題。
相對於此，亦揭示有氧化鈦系(氧化鈦與氧化鈮)薄膜之光記錄媒體用薄膜中使折射率為2.5以上之技術(參照專利文獻3)。於此情形時，採取添加氧化鈮來降低電阻率而達成DC濺鍍之方法，但儘管如此，作為光記錄媒體用途亦不夠充分。
此外，存在記載有於光記錄媒體用薄膜中組合大量的氧化物之專利文獻(專利文獻4、專利文獻5)。該等情形下，光記錄媒體用薄膜之折射率當然很重要，但卻完全未對此提及。推測即便考慮到複數之組合，但折射率會隨組成而變化，從而無法進行充分之研究。又，該等文獻中係使用濺鍍靶製作薄膜，但薄膜之性質會受到靶之成分組成與該靶之性狀的強烈影響。但，該等文獻中並無該揭示，僅不過列出組成，而且作為參考資料，其技術內容之揭示並不夠充分。
專利文獻1：日本特開2006-79710號公報
專利文獻2：日本第3836163號公報
專利文獻3：日本特開2002-277630號公報
專利文獻4：日本特開2003-13201號公報
專利文獻5：日本特開2004-158145號公報
專利文獻6：日本特開2009-157990號公報
非專利文獻1：技術雜誌「光學」第26卷第1號，第9～15頁
本發明有鑒於上述之問題，係以提高Ti系氧化物燒結體濺鍍靶之成膜速度作為主要目的，其課題在於，使用該改良之靶於基板上濺鍍形成Ti系氧化物薄膜，藉此獲得具有高折射率、低消光係數、且透射率優異、折射率之下降少、適用作為光資訊記錄媒體之干涉膜或保護膜的薄膜。又，適用於玻璃基板，即亦可使用作為熱線反射膜、抗反射膜、干涉濾光器。
為了解決上述課題，本發明人等進行潛心研究之結果，獲得如下見解：於氧化鈦中添加氧化鈮極為有效，藉此可獲得能大幅提高Ti系氧化物燒結體靶之濺鍍成膜速度，且亦無損及作為光資訊記錄媒體之干涉膜或保護膜之特性，並可維持透射率、防止反射率之下降的材料。
基於該見解，提供以下發明。
1)一種Ti-Nb系氧化物燒結體濺鍍靶，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，含有TiO2 與Nb2 O5 之中間化合物TiNb2 O7 ，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79。
2)一種Ti-Nb系氧化物燒結體濺鍍靶，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，含有TiO2 與Nb2 O5 之中間化合物TiNb2 O7 ，Ti與Nb之原子比為0.57≦(Nb/(Ti+Nb))≦0.75。
又，本案提供以下發明。
3)一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79，於400～410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
4)一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.46≦(Nb/(Ti+Nb))≦0.79，於400～410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
5)一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.57≦(Nb/(Ti+Nb))≦0.75，於400～410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
6)如上述3)至5)項中任一項之Ti-Nb系氧化物薄膜，其折射率變動在0.012以下，消光係數在0.01以下。
7)如上述3)至5)項中任一項之Ti-Nb系氧化物薄膜，其折射率變動在0.01以下，消光係數在0.001以下。
8)如上述3)至7)項中任一項之Ti-Nb系氧化物薄膜，其係用於光干涉膜、保護膜或光記錄媒體之構成層之一部分的薄膜。
9)一種製造方法，係用以製造上述3)至8)項中任一項之Ti-Nb系氧化物薄膜，其特徵在於：藉由使用由混合有0.5～5%之氧氣的氬氣與氧氣所構成之混合濺鍍氣體進行濺鍍而於基板上成膜。
如上所述，本發明可獲得具有高折射率、且低消光係數之Ti-Nb系氧化物薄膜，該薄膜具有可藉由對Ti-Nb系氧化物燒結體靶進行濺鍍來提高成膜速度之優異特性。藉由本發明而獲得之薄膜作為光資訊記錄媒體之膜、層具有優異之效果。本發明之薄膜其透射率亦優異，反射率之下降少，特別適用作為光資訊記錄媒體之干涉膜或保護膜。
高熔點介電體之保護層對因升溫與冷卻所致之熱的反覆應力必需具有耐性，並且必須使該等之熱影響不會對反射膜或其他部位造成影響，且其本身亦要薄，具有低反射率且不會變質之強韌性。本發明之Ti-Nb系氧化物薄膜具備有可適用於此種材料之特性。
本發明之Ti-Nb系氧化物燒結體濺鍍靶係由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，含有TiO2 與Nb2 O5 之中間化合物TiNb2 O7 ，使Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79。藉此，可獲得比電阻在100Ωcm以下之Ti-Nb系氧化物燒結體靶。靶中之中間化合物TiNb2 O7 可利用XRD測定來加以確認。
於靶之製造階段中，鈦以TiO2 之形式，鈮以Nb2 O5 之形式，調整該等之莫耳比而製作上述原子比率之靶。並且生成兩種氧化物之中間化合物的TiNb2 O7 。因此，氧含量為該等之靶製作階段中之成分比率。於靶製造階段中，會有發生缺氧之情形，該等成為降低比電阻之主要原因，係較佳之形態。然而，當然並非對其期待之成分比率。
藉由使用上述本發明之靶進行濺鍍，可獲得大致相同組成之Ti-Nb系氧化物薄膜。即，可獲得由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79之Ti-Nb系氧化物薄膜。
於濺鍍時，由於使用附加氧氣之氬氣作為通常之濺鍍氣體，因此有時會有靶之組成與薄膜之組成稍微不同之情形，但其並非本質性問題。即若獲得由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，且Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79之Ti-Nb系氧化物薄膜，則可製成具有本發明之特性的薄膜。
鈦(Ti)與鈮(Nb)之成分組成之比例係各自補充關係，任一種為主要成分之情形均可獲得同樣之特性。即，可具有作為使用於光干涉膜、保護膜或光記錄媒體之構成層之一部分的薄膜之功能。
本發明之Ti-Nb系氧化物濺鍍靶，係將Nb/(Ti+Nb)之下限值設定為0.39，將上限值設定為0.79。其原因在於：若下限值未達0.39，則會導致成膜速度下降，添加效果變小，又，若上限值超過0.79，則會導致濺鍍膜之折射率變低，無法獲得具備所欲特性之薄膜。成膜速度有隨著Nb量增加而提高之傾向。
當欲使薄膜之折射率變動更加穩定時，較佳為本發明之Ti-Nb系氧化物薄膜係由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，並使Ti與Nb之原子比在0.46≦(Nb/(Ti+Nb))≦0.79之範圍。
其原因在於：若下限值未達0.46，則會導致折射率之變動量增大，添加效果小；又，若上限值超過0.79，則由於會導致濺鍍膜之折射率下降，而無法獲得具備所欲特性之薄膜。折射率之變動有隨著Nb量增加而提高之傾向。
當欲使薄膜之非晶質穩定性更加提高時，較佳為由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，並使Ti與Nb之原子比在0.57≦(Nb/(Ti+Nb))≦0.75之範圍。該情形下所使用之靶，可藉由使用相同成分組成之靶進行濺鍍而獲得。
如此薄膜之非晶質穩定性獲得提高之理由雖未必明確，但一般認為原因係中間化合物TiNb2 O7 難以容易地結晶化。為使薄膜之非晶質穩定性提高，較為重要是靶中之中間化合物TiNb2 O7 之存在。
該等薄膜，能獲得於400～410nm之波長區域之折射率超過2.5，且消光係數在0.01以下之膜。又，可獲得於400～410nm之波長區域之消光係數在0.005以下，並且消光係數在0.001以下之薄膜。
上述400～410nm之波長區域為藍光雷射之波長區域，於該波長區域中，如上所述折射率超過2.5，該折射率以較高為佳。又，消光係數可達成0.01以下、0.005以下、進而0.001以下，該消光係數越低越適用於多層化。該Ti-Nb系氧化物薄膜係適用作為干涉膜或保護膜，特別是適用作為光記錄媒體。
此時之濺鍍，可藉由調整成將氧氣導入濺鍍氣體，來獲得低消光係數之薄膜。於Ti-Nb系氧化物薄膜之製造時，較佳為使用由混合有0.5～5%之氧氣的氬氣與氧氣所構成之混合濺鍍氣體來進行濺鍍。藉此可於基板上形成消光係數更低之Ti-Nb系氧化物薄膜。
如此，由於在氬氣之濺鍍氣體中導入氧氣來進行濺鍍，因而本發明之燒結體靶會有近似於薄膜之成分組成但並不相同之情形。然而，若可獲得靶與薄膜之成分組成稍微不同，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79之Ti-Nb系氧化物薄膜，則可製成具有本發明之特性的薄膜。
為了提高濺鍍效率，靶之導電性為必要，本發明之靶具備該條件，可進行DC(直流)濺鍍。
存在於燒結體濺鍍靶中之TiNb2 O7 相係以細微顆粒形式均勻分散，其可發揮防止裂縫之效果。平均粒徑較佳在20μm以下。可使用該燒結體濺鍍靶，於含有0.5～5%之氧氣的氬氣環境氣氛中進行濺鍍，而於基板上形成Ti-Nb系氧化物薄膜。
於製造靶時，較佳為使用高純度(通常在4N以上)、平均粒徑在10μm以下(較佳為平均粒徑在1μm以下)之氧化鈦(TiO2 )及高純度(通常在4N以上)、平均粒徑在10μm以下(較佳為平均粒徑在5μm以下)之氧化鈮(Nb2 O5 )粉作為原料。以成為本發明之組成比之方式調合該等粉末。接著，使用濕式球磨機或乾式摻合機(混合機)對經調整成分之該等粉末進行混合。
混合後，填充至碳製之模具中後進行熱壓。熱壓之條件可根據組成成分而改變，通常於900～1300℃之範圍、面壓力100～500kgf/cm2 之範圍中進行。然而，該條件係表示代表性之條件，其選擇為任意，並無特別限定。燒結後對燒結體進行機械加工而精加工成靶形狀。以此方式所製得之靶可保有90%以上之相對密度。
再者，較佳為，使用上述濕式球磨機或乾式摻合機(混合機)進行混合後，於1000～1300℃下進行煅燒，並且藉由濕式球磨機處理12～25小時左右，進行微粉碎至粒徑1μm來製作漿料，藉由乾燥機將該漿料乾燥，然後進行熱壓。該步驟係為獲得均勻之靶組織的推薦步驟。藉由上述方式，可獲得特定組成之Ti-Nb系氧化物燒結體濺鍍靶。
實施例
以下，基於實施例及比較例加以說明。再者，本實施例僅是用以表示較佳之例者，本發明並非限定於該例。即，本發明僅受到申請專利範圍之限制，包括本發明所含之實施例以外之各種變形。
(實施例1～5)
準備高純度(4N)、平均粒徑為1μm之氧化鈦(TiO2 )及高純度(4N)、平均粒徑為3μm之氧化鈮(Nb2 O5 )粉作為原料，調合成下述表所示之組成比。接著，使用乾式摻合機將經調整成分之該等粉末加以混合後，於1000℃下進行煅燒。然後，進一步藉由濕式球磨機處理20小時左右，進行微粉碎至粒徑1μm而製得漿料。
接著，將該漿料藉由乾燥機乾燥後，填充至碳製之模具中並進行熱壓。熱壓之條件係於1200℃、面壓力300kgf/cm2 下進行。以此方式所製得之靶均具有90%以上之相對密度。
藉由上述方式，可獲得表1所示之特定組成之Ti-Nb系氧化物燒結體濺鍍靶。如表1所示，靶之比電阻為0.01～0.5Ωcm。藉由自本燒結體採取之樣品之XRD測定，確認存在TiNb2 O7 。
接著，使用以此方式所製得之濺鍍靶，於玻璃基板上形成濺鍍膜。濺鍍條件，如表1所示，係於Ar氣-O2 (0.5～5%)氣體環境氣氛中，於氣壓：0.5Pa、氣體流量：50sccm、濺鍍功率：500～1000W下實施DC濺鍍。
其結果，可確認能夠無問題地實施DC濺鍍，且該靶具有導電性。又，濺鍍中並無發生異常放電。
於玻璃基板上形成1μm之濺鍍膜。成膜速度、藉由EPMA所分析之膜的組成分別示於表1。
測定該濺鍍膜之折射率及消光係數。折射率及消光係數係使用光波長：405nm，藉由橢圓偏光計進行測定。
又，折射率變動量，係將於玻璃基板上濺鍍成膜之樣品在80℃、80%環境下保管200小時，根據該環境保管前後之折射率之差求得。
該等之結果同樣示於表1。
關於實施例1，靶組成及薄膜組成之Ti與Nb之原子比均為0.39，雖在本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍，但為下限值。其結果，比電阻低至0.5Ωcm，成膜速度為2.1/sec/kW，為符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.57，折射率變動量為稍微不穩定之0.012，消光係數稍高至0.005，但可形成較佳之光記錄媒體之干涉膜或保護膜等。
關於實施例2，靶組成及薄膜組成之Ti與Nb之原子比均為0.57，為本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍內。其結果，比電阻低至0.01Ωcm，成膜速度高達2.6/sec/kW，係符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.56，折射率變動量為穩定之0.007，消光係數低至0.0001，可形成較佳之光記錄媒體之干涉膜或保護膜等。
關於實施例3，就靶組成而言，Ti與Nb之原子比為0.67，就薄膜組成而言，Ti與Nb之原子比為0.66，為本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍內。
其結果，比電阻低至0.02Ωcm，成膜速度高達2.7/sec/kW，係符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.55，折射率變動量為穩定之0.005，消光係數低至0.0001，可形成較佳之光記錄媒體之干涉膜或保護膜等。
關於實施例4，就靶組成而言，Ti與Nb之原子比為0.75，就薄膜組成而言，Ti與Nb之原子比為0.75，為本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍內。
其結果，比電阻低至0.05Ωcm，成膜速度高達2.9/sec/kW，係符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.55，折射率變動量為穩定之0.005，消光係數低至0.0001，可形成較佳之光記錄媒體之干涉膜或保護膜等。
關於實施例5，就靶組成而言，Ti與Nb之原子比為0.79，就薄膜組成而言，Ti與Nb之原子比為0.79，為本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍內。
其結果，比電阻低至0.03Ωcm，成膜速度高達2.7/sec/kW，係符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.54，折射率變動量為穩定之0.004，消光係數低至0.0001，可形成較佳之光記錄媒體之干涉膜或保護膜等。
關於實施例6，就靶組成而言，Ti與Nb之原子比為0.46，就薄膜組成而言，Ti與Nb之原子比為0.46，為本發明之0.46≦(Nb/(Ti+Nb))≦0.79之範圍內。
其結果，比電阻低至0.1Ωcm，成膜速度高達2.3/sec/kW，係符合本發明之目的之濺鍍靶。又，薄膜之折射率高達2.56，折射率變動量為穩定之0.01，消光係數低至0.0001，可形成較佳之光記錄媒體之干涉膜或保護膜等。
(比較例1～4)
與實施例1同樣，準備高純度(4N)、平均粒徑為1μm之氧化鈦(TiO2 )及高純度(4N)、平均粒徑為3μm之氧化鈮(Nb2 O5 )粉作為原料，調合成下述表所示之組成比。
接著，使用乾式摻合機將經成分調整之該等粉末混合後，於1000℃下煅燒。然後，進一步藉由濕式球磨機處理20小時左右，進行微粉碎至粒徑1μm製成漿料。
接著，將該漿料藉由乾燥機乾燥後，填充至碳製之模具中進行熱壓。熱壓之條件係於1000～1300℃、面壓力300kgf/cm2 下進行。以此方式所製得之靶均具有90%以上之相對密度。
藉由上述上述，可獲得表1所示之特定組成之Ti-Nb系氧化物燒結體濺鍍靶。如表1所示，靶之比電阻為1～100(超)Ωcm。
接著，使用以上述方式所製得之濺鍍靶於玻璃基板上形成濺鍍膜。濺鍍條件，如表1所示，係於Ar氣-O2 (2%)氣體環境氣氛中，於氣壓：0.5Pa、氣體流量：50sccm、濺鍍功率：500～1000W下實施DC濺鍍。其結果，雖可進行DC濺鍍，但成膜速度顯著緩慢。以下，敍述比較例之綜合評價。
藉由濺鍍之實施，而於玻璃基板上形成500之濺鍍膜。成膜速度、藉由EPMA分析之膜之組成分別示於表1。並且，測定該濺鍍膜之折射率及消光係數。折射率及消光係數係使用光波長：405nm，利用橢圓偏光計測定。該等之結果同樣示於表1。
比較例1係不含有鈮(Nb)之氧化鈦靶，該靶之比電阻為＞100Ωnm較高，成膜速度顯著降低至0.85/sec/kW，係不符合本發明之目的之濺鍍靶。
關於比較例2，Ti與Nb之原子比為0.01，超出本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍。其結果：比電阻高達80Ωcm，成膜速度低至0.88/sec/kW，係不符合本發明之目的之濺鍍靶。
關於比較例3，Ti與Nb之原子比為0.95，超出本發明之0.39≦(Nb/(Ti+Nb))≦0.79之範圍。其結果：雖然比電阻為1Ωcm，成膜速度稍高至3.2/sec/kW，但因折射率降低至2.48，因而係不符合本發明之目的之濺鍍靶。
關於比較例4，Ti與Nb之原子比為0.1，超出本發明之0.39≦(Nb/(Ti+Nb))≦0.79。比電阻為1.5Ωcm，成膜速度低至1.2/sec/kW，係不符合本發明之目的之濺鍍靶。
(實施例與比較例之總結)
若將上述實施例與比較例進行比較，則處於本發明之範圍內者，均係折射率較高較穩定，消光係數變小。同樣，濺鍍靶之各成分處於本發明之條件內者取得以下良好效果：靶之比電阻均在100Ωcm以下，成膜速度高，膜之非晶質性較穩定。
[產業上之可利用性]
本發明係關於一種Ti-Nb系氧化物燒結體濺鍍靶及使用該靶進行濺鍍成膜之Ti-Nb系氧化物薄膜，藉由本發明而得之薄膜具有高折射率、且低消光係數，可用作Blu-Ray Disc(註冊商標)等之電子零件等光資訊記錄媒體之膜、層。
又，本發明之薄膜同時透射率優異，反射率之降低較少，特別有效用作用於光資訊記錄媒體之干涉膜、保護膜或光記錄媒體之構成層的一部分之膜。高熔點介電體之保護層對因升溫與冷卻所致之熱的反覆應力具有耐性，進而，該等之熱影響不會對反射膜或其他部位帶來影響，且其本身亦薄，可有效用作必需低反射率且不變質之強韌性的介電體保護層。
進而，具有此種特性之材料可適用於建築用玻璃、汽車用玻璃、CRT用、平面顯示器用途，即，亦可用作熱線反射膜、抗反射膜、干涉濾光器。

Claims (11)

  1. 一種Ti-Nb系氧化物燒結體濺鍍靶，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，可藉由XRD測定而確認TiO2 與Nb2 O5 之中間化合物TiNb2 O7 之存在，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79，相對密度為90%以上，比電阻為0.5Ωcm以下。
  2. 一種Ti-Nb系氧化物燒結體濺鍍靶，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，可藉由XRD測定而確認TiO2 與Nb2 O5 之中間化合物TiNb2 O7 之存在，Ti與Nb之原子比為0.57≦(Nb/(Ti+Nb))≦0.75，相對密度為90%以上，比電阻為0.5Ωcm以下。
  3. 一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.39≦(Nb/(Ti+Nb))≦0.79，於400~410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
  4. 一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.46≦(Nb/(Ti+Nb))≦0.79，於400~410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
  5. 一種Ti-Nb系氧化物薄膜，其特徵在於：由鈦(Ti)、鈮(Nb)、剩餘部分為氧及不可避免之雜質所構成，Ti與Nb之原子比為0.57≦(Nb/(Ti+Nb))≦0.75， 於400~410nm之波長區域之折射率超過2.5，且消光係數在0.01以下。
  6. 如申請專利範圍第3至5項中任一項之Ti-Nb系氧化物薄膜，其於80℃、相對濕度80%之環境下保管濺鍍成膜於玻璃基板上之樣品200小時，根據該環境保管前後之折射率之差所求得之折射率變動在0.012以下，消光係數在0.01以下。
  7. 如申請專利範圍第3至5項中任一項之Ti-Nb系氧化物薄膜，其於80℃、相對濕度80%之環境下保管濺鍍成膜於玻璃基板上之樣品200小時，根據該環境保管前後之折射率之差所求得之折射率變動在0.01以下，消光係數在0.001以下。
  8. 如申請專利範圍第3至5項中任一項之Ti-Nb系氧化物薄膜，其係用於光干涉膜、保護膜或光記錄媒體之構成層之一部分的薄膜。
  9. 如申請專利範圍第6項之Ti-Nb系氧化物薄膜，其係用於光干涉膜、保護膜或光記錄媒體之構成層之一部分的薄膜。
  10. 如申請專利範圍第7項之Ti-Nb系氧化物薄膜，其係用於光干涉膜、保護膜或光記錄媒體之構成層之一部分的薄膜。
  11. 一種製造方法，係用以製造申請專利範圍第3至10項中任一項之Ti-Nb系氧化物薄膜，藉由使用由混合有0.5~5%之氧氣的氬氣與氧氣所構 成之混合濺鍍氣體進行濺鍍而於基板上成膜。
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