TWI330379B - Field emission pixel tube - Google Patents

Field emission pixel tube Download PDF

Info

Publication number
TWI330379B
TWI330379B TW96142409A TW96142409A TWI330379B TW I330379 B TWI330379 B TW I330379B TW 96142409 A TW96142409 A TW 96142409A TW 96142409 A TW96142409 A TW 96142409A TW I330379 B TWI330379 B TW I330379B
Authority
TW
Taiwan
Prior art keywords
field emission
anode
tube
cathode
emission pixel
Prior art date
Application number
TW96142409A
Other languages
Chinese (zh)
Other versions
TW200921740A (en
Inventor
Yang Wei
Liang Liu
Shou-Shan Fan
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW96142409A priority Critical patent/TWI330379B/en
Publication of TW200921740A publication Critical patent/TW200921740A/en
Application granted granted Critical
Publication of TWI330379B publication Critical patent/TWI330379B/en

Links

Description

1330379 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種場發射裝置 管0 尤其涉及一種場發射像素 [0002] [0003] [0004] 096142409 【先前技術】 奈米碳管(Carbon + , 、 CNT)係一種新型碳材料 ’由日本研究人員I彳、 竹 ljlma在1991年發現,請參見"H ical Microtubule^ - 〇f Graphitic Carbon" S Iijima, Nature v , _ , · 呈右搞女的县π ’ 354, P56 (1991 )。奈米碳管 八 ^比(其長度在微米量級以上,直砰口有 幾個奈米或幾十個夸半、 且抂,、有 …古/… 具充、良好,電等熱性能, :且還:很好的機械強度和良好㈣定 性使得奈米碳管成為—種優良的場發射^。因此? ==射—―前奈米科技領域的 ^ 從气5_$翁碳管陣列抽出奈米 碳管薄膜,再經有機溶液收縮成纖維狀或用旋轉的方法 擰成繩狀。這種線狀奈米碳管材料具有宏觀的尺度,對 其進行一些操作極為方便。這種奈来碳管長線的端面具 有很好的場發射能力,係一種良好的場發射電子源。 場發射像素管係奈米碳管場發射電子__個重要應用 領域》先前的場發射像素管包括—個中空殼體,該殼體 具有-個出光部,該出光部的内壁依次塗覆有螢光粉層 和陽極層’該殼體内部與該出光部相對處有—陰極發射 表單編號A0101 第3頁/共25頁 0993213056-0 1330379 _ 099年06月18日梭正替换頁 體,該陰極發射體包括一奈米碳管長線作為場發射電子 源。當該場發射像素管工作時,在陽極層和陰極之間加 上電壓形成電場,通過電場作用使陰極發射體尖端發射 出電子,電子穿透陽極層轟擊螢光粉層,發出可見光。 [0005] 然而,先前的具有奈米碳管陰極發射體的像素管,因為 要將螢光粉層塗覆在殼體内一表面上,受製備工藝限制1330379 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a field emission device tube 0, and more particularly to a field emission pixel [0002] [0003] [0004] 096142409 [Prior Art] Carbon nanotubes ( Carbon + , , CNT) is a new type of carbon material 'discovered by Japanese researchers I彳, bamboo ljlma in 1991, see "H ical Microtubule^ - 〇f Graphitic Carbon" S Iijima, Nature v , _ , · Right to the female county π ' 354, P56 (1991). Nano carbon tube eight ^ ratio (its length is above the micron level, there are several nano or tens of exaggerated in the mouth, and 抂, ... ... ancient /... with charge, good, electrical and other thermal properties, : Also: good mechanical strength and good (four) qualitative makes the carbon nanotubes become an excellent field emission ^. Therefore? == shot--the former nanotechnology field ^ from the gas 5_$ Weng carbon tube array The carbon nanotube film is then shrunk into a fiber shape by an organic solution or twisted into a rope by a rotating method. The linear carbon nanotube material has a macroscopic scale and is extremely convenient for some operations. The end face of the long tube of the carbon tube has a good field emission capability and is a good source of field emission electrons. The field emission pixel tube is a carbon nanotube field emission electron __ an important application field. a hollow casing having a light-emitting portion, the inner wall of the light-emitting portion being sequentially coated with a phosphor layer and an anode layer. The interior of the casing is opposite to the light-emitting portion. - Cathode emission form No. A0101. Page / Total 25 pages 0993213056-0 1330379 _ June 18, 2017 Positively replacing the page body, the cathode emitter comprises a long carbon nanotube line as a field emission electron source. When the field emission pixel tube is operated, a voltage is applied between the anode layer and the cathode to form an electric field, and the cathode is emitted by an electric field. The tip of the body emits electrons, and electrons penetrate the anode layer to bombard the phosphor layer to emit visible light. [0005] However, the previous pixel tube with a carbon nanotube cathode emitter is coated with a layer of phosphor powder in the shell. On the surface of the body, limited by the preparation process

,幾何尺寸較大,一般發光區域為厘米量級,或更大, 這使得基於奈米碳管的場發射像素管的應用受到了極大 的限制,例如,先前的像素管無法用來組裝具有較高解 析度的大型戶外顯示器。先前的具有奈米碳管陰極發射 體的像素管,由於製造過程:中陰輕與陽雜'需)要準確對準 ,製造工藝難度大,良品率:低。男外先前袖像素管製 ' ... 備方法,先將螢光粉層塗覆在殼體内壁上,再在螢光粉 層上沈積一層有機物,然後在有機物層上鍍一陽極層, 最後將有機物蒸發掉,製造工藝較複雜。 [0006] 有鑒於此,提供一種尺寸小,更易於製造的場發射像素 管實為必要。 :’ 【發明内容】 [0007] 一種場發射像素管,其包括一殼體以及置於殼體内的一 陰極,一螢光粉層和一陽極,該陰極與陽極之間間隔設 置,其中,該陰極包括一陰極支撐體與一陰極發射體, 該陰極發射體一端與陰極支撐體電性連接,其中,該陽 極包括一端面,所述螢光粉層設置在該陽極端面上。 [0008] 所述的端面為拋光的平面、半球面、球面、錐面或凹面 096142409 表單編號Α0101 第4頁/共25頁 0993213056-0 1330.379 [0009] [0010] 099年06月18日修正替換頁 所述的陽極一端通過陽極引線連接到殼體外,端面設置 在陽極另一端。 所述的陽極為一金屬桿,該金屬桿直徑為100微米至1厘 米。 [0011] [0012]The geometric size is large, and the general illumination area is on the order of centimeters or larger, which makes the application of the field emission pixel tube based on the carbon nanotubes greatly limited. For example, the previous pixel tube cannot be used for assembly. Large outdoor display with high resolution. The previous pixel tube with a carbon nanotube cathode emitter has to be accurately aligned due to the manufacturing process: the light and the yang in the middle, and the manufacturing process is difficult, and the yield is low. In the male outer sleeve control, the phosphor layer is first coated on the inner wall of the casing, and then an organic layer is deposited on the phosphor layer, and then an anode layer is plated on the organic layer. The organic matter is evaporated and the manufacturing process is complicated. In view of this, it is necessary to provide a field emission pixel tube that is small in size and easier to manufacture. [0007] A field emission pixel tube includes a casing and a cathode disposed in the casing, a phosphor layer and an anode, and the cathode and the anode are spaced apart, wherein The cathode includes a cathode support and a cathode emitter. One end of the cathode emitter is electrically connected to the cathode support. The anode includes an end surface, and the phosphor layer is disposed on the anode end surface. [0008] The end face is a polished plane, hemispherical surface, spherical surface, tapered surface or concave surface 096142409 Form No. 1010101 Page 4 / Total 25 Page 0993213056-0 1330.379 [0009] [0010] Correction replacement on June 18, 099 One end of the anode described in the page is connected to the outside of the casing through an anode lead, and the end face is disposed at the other end of the anode. The anode is a metal rod having a diameter of from 100 micrometers to 1 centimeter. [0012] [0012]

[0013] [0014] [0015] [0016] [0017][0017] [0017] [0017] [0017]

[0018] [0019] 096142409 所述的陰極發射體為一奈米碳管長線、單根奈米碳管或 單根奈米碳纖維。 所述的奈米碳管長線包括一電子發射端,該電子發射端 為奈米碳管長線遠離陰極支撐體的一端。 所述的電子發射端包括多個突出的場發射尖端。 所述的場發射尖端的頂端突出有一根奈米碳管。 所述的電子發射端正對陽極端面設置、斜對陽極端面設 置或設置在陽極端面附近。 所述的電子發射端與陽極端面的距離小於5毫米。 所述的殼體為一中空透明的圓柱體、立方體或三棱柱。 ........ ·, 所述的場發射像素管進一步、包括_‘一吸氣劑位於殼體内。 相較于先前技術,所述的場發射像素管的陰極發射體為 奈米碳管長線,陽極為一個金屬桿,且該陽極端面設置 有螢光粉層,該螢光粉層受電子激發後發光。該場發射 像素管具有以下優點:第一,螢光粉層設置在陽極端面 上,因此這種場發射像素管的體積小,發光面積僅為毫 米量級,還可以更小。可以用來組裝具有較高解析度的 大型戶外顯示器。第二,這種場發射像素管中陰極與陽 表單編號A0101 第5頁/共25頁 0993213056-0 1330379 極無需精確對準,因此,更容易製^第三,這種場^ •射像素管採用金屬桿作為陽極,製備成本低’易於實現 大規模生產使用。 [0020] [0021] 【實施方式】 以下將結合附圖對本技術方案作進一步的詳細說明。 請參閱圖1,本技術方案實施例提供一種場發射像素管 100,其包括一殼體102,一陰極104,一螢光粉層11〇, 一陽極112以及一陰極引線116和一陽極引線114。該陰 極104與陽極112間隔設置於殼體1〇2内。該陰極1〇4包括 一陰極支撐體106與一陰冬^發^體1〇8。該陰極支撐體 106的第-端與陰極發射體“ 一端毫.,第二端通-^ ^ 116 f ^ f .J ^ U2^_ 端包括一端面120 »該螢光粉層11〇設置在陽極U2端面[0019] The cathode emitter described in 096142409 is a carbon nanotube long line, a single carbon nanotube or a single nano carbon fiber. The long carbon nanotube line includes an electron emitting end, which is an end of the long carbon nanotube line away from the cathode support. The electron emitting end includes a plurality of protruding field emission tips. The top of the field emission tip protrudes from a carbon nanotube. The electron-emitting end is disposed opposite to the anode end face, obliquely opposite to the anode end face, or disposed near the anode end face. The distance between the electron emitting end and the end face of the anode is less than 5 mm. The housing is a hollow transparent cylinder, a cube or a triangular prism. The field emission pixel tube further includes _ 'a getter located in the housing. Compared with the prior art, the cathode emitter of the field emission pixel tube is a long line of carbon nanotubes, the anode is a metal rod, and the anode end surface is provided with a phosphor powder layer, and the phosphor powder layer is excited by electrons. Glowing. The field emission pixel tube has the following advantages: First, the phosphor powder layer is disposed on the anode end face, so that the field emission pixel tube has a small volume, and the light emission area is only on the order of millimeters, and can be smaller. Can be used to assemble large outdoor displays with higher resolution. Second, in the field emission pixel tube, the cathode and the anode form number A0101 page 5 / 25 pages 0993213056-0 1330379 extremely need to be precisely aligned, therefore, it is easier to manufacture the third, this field ^ pixel tube The use of a metal rod as an anode results in a low production cost and is easy to achieve mass production. [0021] [Embodiment] Hereinafter, the technical solution will be further described in detail with reference to the accompanying drawings. 1 , a field emission pixel tube 100 includes a housing 102 , a cathode 104 , a phosphor layer 11 , an anode 112 , a cathode lead 116 , and an anode lead 114 . . The cathode 104 is spaced apart from the anode 112 in the housing 1〇2. The cathode 1〇4 includes a cathode support body 106 and an yindong body 1〇8. The first end of the cathode support body 106 and the cathode emitter are "one end milli.", the second end is connected to - ^ ^ 116 f ^ f . J ^ U2 ^ _ end includes an end face 120 » the phosphor layer 11 〇 is disposed at Anode U2 end face

120上。該陽極112遠離端面12〇的另一端通過—陽極引 線114電性連接到殼體1〇2外。 ^ i-., ... 1.120 on. The other end of the anode 112 away from the end face 12〇 is electrically connected to the outside of the casing 1〇2 via the anode lead wire 114. ^ i-., ... 1.

[0022] 所述殼體102為一真空密封{的結構。該殼體1〇2的—端包 括一出光部124 ’其與端面Ci^目:對。該殼體1〇2材料^ ,透明材料如:石英石或破^在本實施例t,該殼體 102為-中空玻璃圓柱體’且該圓枉體直經為i毫米至5毫 米,高度為2毫米至5毫米。可以理解,該殼體…還可以 係中空的立方體、三棱柱或其他多邊形棱柱,本領域技 術人員可以根據實際情況進行選擇。[0022] The housing 102 is a vacuum sealed structure. The end of the housing 1〇2 includes a light exiting portion 124' which is opposite to the end surface Ci. The housing 1 〇 2 material ^, transparent material such as: quartz stone or broken ^ in this embodiment t, the housing 102 is - hollow glass cylinder ' and the round body straight through is i mm to 5 mm, height It is from 2 mm to 5 mm. It can be understood that the housing can also be a hollow cube, a triangular prism or other polygonal prism, which can be selected by a person skilled in the art according to the actual situation.

[0023] 096142409 所述陰極支賴106為-導電體,如:金屬絲或金屬桿。 該陰極支雜106形狀不限,且能夠導熱並具有—定干強度 。本實施例中該陰極支撐體106優選為鎳絲。 又 表單編號A0101 第6頁/共25頁 0993213056-0 1330.379 [0024][0023] 096142409 The cathode support 106 is an electrical conductor such as a wire or a metal rod. The cathode branch 106 is not limited in shape and is capable of conducting heat and having a constant dry strength. The cathode support 106 in the present embodiment is preferably a nickel wire. Form No. A0101 Page 6 of 25 0993213056-0 1330.379 [0024]

099年06月18日修正替換頁 所述的陰極發射體108可以選自奈米碳管長線、單根奈米 碳管、單根奈米碳纖維或其他場發射電子源。本實施例 中,陰極發射體108優選為一奈米碳管長線。該奈米碳管 長線的長度為0.1毫米至10毫米,直徑為1微米至100微 米。該奈米碳管長線係由多個平行的首尾相連的奈米碳 管束組成的束狀結構或由多個首尾相連的奈米碳管束組 成的絞線結構,該相鄰的奈米碳管束之間通過凡德瓦爾 力緊密結合,該奈米碳管束中包括多個首尾相連且定向 排列的奈米碳管。該奈米碳管長線中的奈米碳管為單壁 、雙壁或多壁奈米碳管。該奈米碳管的長度範圍為 10〜100微米,且奈米碳管尖端的直徑小於5奈米。該奈米 碳管長線包括一電子發射端122。請參見圖2,該電子發 射端122可以包括多個突出的場發射尖嬙300。該場發射 尖端300的頂端突出有一根奈米碳管302。請參閱圖3,從 奈米碳管長線的電子發射端122的掃描電鏡照片可以看出 該電子發射端包括多個突出的場發射尖端。請參閱圖4, 從奈米碳管長線的電子發射端T22的透射電鏡照片上,可 以看出奈米碳管長線中的場發射尖端的頂端突出有一根 奈米碳管。 [0025] 所述的陽極112為一導電體,如:金屬桿。該陽極112形 狀不限,且能夠導熱並具有一定強度。本實施例中,陽 極11 2優選為銅金屬桿。該銅金屬桿直徑為100微米至1厘 米。可以理解,該銅金屬桿直徑可以根據實際需要選擇 。所述的端面120設置於陽極112靠近電子發射端122的 一端,且為一拋光端面120。該拋光的端面120可以為平 096142409 表單編號A0101 第7頁/共25頁 0993213056-0 1330379 _— 099年06月18日按正替换頁 面、半球面、球面、雜面、凹面或其他形狀端面。該抛 光的端面120可以反射螢光粉層110發出的光。 [0026] 所述的螢光粉層110設置在陽極112的端面120上。該螢 光粉層110的材料可以為白色螢光粉,也可以為單色螢光 粉,例如紅色,綠色,藍色螢光粉等,當電子轟擊螢光 粉層110時可發出白光或其他顏色可見光。該螢光粉層 110可以採用沈積法或塗敷法設置在陽極112的一端的端 面120上。該螢光粉層110厚度為5至50微米。The cathode emitter 108 described in the revised replacement page of June 18, 099 may be selected from the group consisting of a long carbon nanotube tube, a single carbon nanotube, a single nanocarbon fiber, or other field emission electron source. In this embodiment, the cathode emitter 108 is preferably a long carbon nanotube tube. The carbon nanotube long wire has a length of 0.1 mm to 10 mm and a diameter of 1 μm to 100 μm. The carbon nanotube long line is a bundle structure composed of a plurality of parallel end-to-end connected carbon nanotube bundles or a strand structure composed of a plurality of end-to-end connected carbon nanotube bundles, the adjacent carbon nanotube bundles Intimately coupled by Van der Waals force, the carbon nanotube bundle includes a plurality of carbon nanotubes connected end to end and aligned. The carbon nanotubes in the long line of the carbon nanotubes are single-walled, double-walled or multi-walled carbon nanotubes. The carbon nanotubes have a length ranging from 10 to 100 microns and the carbon nanotube tip has a diameter of less than 5 nanometers. The nano carbon tube long line includes an electron emitting end 122. Referring to Figure 2, the electron emitting end 122 can include a plurality of protruding field emission tips 300. A carbon nanotube 302 protrudes from the top end of the field emission tip 300. Referring to Figure 3, it can be seen from the scanning electron micrograph of the electron-emitting end 122 of the long carbon nanotube line that the electron-emitting end includes a plurality of protruding field emission tips. Referring to Figure 4, from the transmission electron micrograph of the electron-emitting end T22 of the long carbon nanotube line, it can be seen that a carbon nanotube is protruded from the top of the field emission tip in the long line of the carbon nanotube. [0025] The anode 112 is an electrical conductor, such as a metal rod. The anode 112 is not limited in shape and is capable of conducting heat and having a certain strength. In the present embodiment, the anode 11 2 is preferably a copper metal rod. The copper metal rod has a diameter of from 100 micrometers to 1 centimeter. It can be understood that the diameter of the copper metal rod can be selected according to actual needs. The end surface 120 is disposed at one end of the anode 112 near the electron emission end 122 and is a polished end surface 120. The polished end face 120 can be flat 096142409 Form No. A0101 Page 7 of 25 0993213056-0 1330379 _—June 18, 2017 Replace the page, hemispherical, spherical, miscellaneous, concave or other shaped end faces. The polished end face 120 can reflect the light emitted by the phosphor layer 110. The phosphor layer 110 is disposed on the end surface 120 of the anode 112. The material of the phosphor layer 110 may be white fluorescent powder or monochromatic fluorescent powder, such as red, green, blue fluorescent powder, etc., when the electron bombards the fluorescent powder layer 110, it may emit white light or other Color visible light. The phosphor layer 110 may be disposed on the end face 120 of one end of the anode 112 by a deposition method or a coating method. The phosphor layer 110 has a thickness of 5 to 50 microns.

[0027] 所述的陰極發射體108與陽極112的設置可以為多種位置 關係,請參見圖5至圖8。可以使電子發射端122與陽極 112的端面120正對設置;可以使'奈米碳管長線與金屬桿 .if'i 轴向成一銳角,使電子發射端12½與端面丨20斜對設置; 可以使奈米碳管長線與金屬桿軸向互相垂直或平行,使 電子發射端122設置在端面120附近。其中,電子發射端 122與端面120距離小於5毫米。: [0028] 另外,該場發射像素管100進一步包括一位於殼體102内 的吸氣劑118,用於吸附場發射像士管内殘餘氣體,維持 場發射像素管内部的真空度。該吸氣劑118可以為蒸散型 吸氣劑金屬薄膜,在殼體102封接後通過高頻加熱蒸鍍的 方式形成於靠近陰極104的殼體102内壁上。該吸氣劑 118也可以為非蒸散型吸氣劑,固定在陰極支撐體106上 。所述的非蒸散型吸氣劑118材料主要包括鈦、锆、铪、 灶、稀土金屬及其合金。 096142409 表單編號A0101 第8頁/共25頁 0993213056-0 1330379 ’—部分可見光直接透過殼體1G2_端的出光部124射出 ’另一部分可見光則經過陽極112端面⑵反射後,透過 殼體102-端的出光部124射出。該場發射像素管,由於 將榮光粉層U0設置於陽極112端面m上避免了製備 工藝限制,所以體積可以做到更小,其發光面積僅為毫 未量級1且’該場發射像素管t陰極㈣極無需精確 對準目此,更容易製造。另外,這種場發射像素管採 用金屬桿作為陽極’製備成本低,易於實現大規模生產 使用。 ….'ϊΛ [0030] 明,閱圖9 ’本技術方案實施例還進—步提供—場發射像 素s 10G的製備方法,具體包括以下步驟: [0031] [0032] aa 099年06月18日修正替換頁 間加上電壓形成電場’通過電場作用使陰極發射體1〇8尖 端即電子發射端122發射出電子,發射電子到達陽極ιι2 ’轟擊陽極112表面的螢光粉層11〇,發出可見光。其中 乂驟提供—㈣芯m雜雜包括《%個金屬絲 分別作為陰極引線116與_弓_4。 ;·- - · 所述的兩個金屬絲被玻璃H並被玻璃隔開,形成Η形 狀玻璃芯柱。該金屬絲為可以實現和玻璃炫封的材料, 通常為杜美絲、鎢絲、鉬絲等。 [0033] 步驟- ’提供-金屬桿作為陽極112 上述陽極⑽114 —端電性連接。 ’並將該陽極112與 [0034] 將作為陽極112的金屬桿的一端通過點焊技術與陽極引線 114 一端電性遠垃 逆接。本技術方案實施例中,該金屬桿優選 的為銅金屬桿,直彳i為mmi厘米。將金屬桿的另 096142409 表單編號A0101 第9頁/共25頁 0993213056-0 1330379 [0035] [0036] [0037] [0038} [0039] [0040] [0041] I 099年06月18日| 端端面120抛光’該抛光端面12◦可以為平面、半球面 '球面 '錐面、凹面或其他形狀端面。 步驟一,提供一螢光粉並將該簦光粉設置於上述陽極 112一端的端面120上,形成一螢光粉層110。 將上述登光粉採用塗敷或沈積的方法設置於陽極11 2拋光 的^面120 °該螢光粉可以為白色螢光粉,也可以為單色 螢光粉,例如紅色,綠色,藍色螢光粉等。 步驟四’提供一金屬絲作為陰極支撐體106,並將該陰極 支撐體106與上述陰極引線116 —端電性連接》 將陰極支撐體1Q6與陰極引線11 6-,落性連接的方法為 點焊法。本技術方案實施例中’陰,極《%體106優選為鎳 絲。 ,一, ’、 步驟五,提供一陰極發射體108,並將該陰極發射體1〇8 與陰極支撐體1〇6遠離陰極引線11丑的,_端電性連接,形 成一場發射像素管100預製;體。. 陰極發射體108為奈米碳管長漆,^根奈米碳管單根奈 米碳纖維或其他場發射電子源《本實施例中,陰極發射 體1〇8優選為奈米碳管長線。其中,該奈米碳管長線的長 度為〇. 1毫米至10毫米,直徑為1微米至1毫米。奈米碳管 長線通過導電膠與陰極支撐體106—端電性連接。當使用 奈来碳管長線作為陰極發射體108時’製備該陰極發射體 108具體包括以下步驟: 首先,提供一超順排奈米碳管陣列形成於一發基板上。 096142409 表單編號A0101 第10頁/共25頁 0993213056-0 1330379 [0042] 其次,從上述超順排奈米碳管陣列中插出 099年06月18日 一奈米碳管薄 修正 膜或-奈米碳管絲’通過使用有機溶料者施加機械外 力處理該奈米碳管薄膜或者奈米碳管絲得到一奈卡碳管 長線。 [0043] 從超順排奈米碳管陣列令抽出一束奈米碳管時,相鄰的 奈米碳管由於凡德瓦爾力的作用而相互連接在一起而形 成一奈米碳管薄膜或一奈米碳管絲。本實施例中,也可 以採用扭轉紡紗技術製備一奈米碳管長線。[0027] The arrangement of the cathode emitter 108 and the anode 112 may be in various positional relationships, as shown in FIGS. 5-8. The electron emitting end 122 can be disposed opposite to the end surface 120 of the anode 112; the 'nano carbon tube long line can be made at an acute angle to the metal rod .if'i axial direction, so that the electron emitting end 121⁄2 and the end surface 丨20 are diagonally disposed; The carbon nanotube long wire and the metal rod are axially perpendicular or parallel to each other such that the electron emission end 122 is disposed near the end surface 120. The distance between the electron emitting end 122 and the end surface 120 is less than 5 mm. [0028] In addition, the field emission pixel tube 100 further includes a getter 118 disposed in the housing 102 for adsorbing a field emission of residual gas in the tube to maintain the vacuum inside the field emission pixel tube. The getter 118 may be an evaporable getter metal film which is formed on the inner wall of the casing 102 close to the cathode 104 by high-frequency heating evaporation after the casing 102 is sealed. The getter 118 may also be a non-evaporable getter fixed to the cathode support 106. The non-evaporable getter 118 material mainly includes titanium, zirconium, hafnium, stove, rare earth metal and alloys thereof. 096142409 Form No. A0101 Page 8 of 25 0993213056-0 1330379 '—Partial visible light is directly transmitted through the light exit portion 124 of the housing 1G2_ end. 'The other part of the visible light is reflected by the end face (2) of the anode 112, and then transmitted through the end of the housing 102. The part 124 is emitted. The field emission pixel tube avoids the preparation process limitation by arranging the glory powder layer U0 on the end surface m of the anode 112, so the volume can be made smaller, and the light-emitting area is only millimeter 1 and 'the field emission pixel tube The cathode (four) pole does not need to be precisely aligned and is easier to manufacture. In addition, the field emission pixel tube uses a metal rod as the anode. The preparation cost is low and it is easy to realize mass production. [0030] As shown in FIG. 9 , the embodiment of the present technical solution further provides a method for preparing the field emission pixel s 10G, which specifically includes the following steps: [0032] [0032] aa June 18, 18 The correction of the replacement page between the voltages and the formation of the electric field 'by the electric field causes the cathode emitter 1 〇 8 tip, that is, the electron emission end 122 to emit electrons, and the emitted electrons reach the anode ιι 2 'the phosphor powder layer 11 轰 bombards the surface of the anode 112, and emits Visible light. Among them, the step - (4) core m miscellaneous includes "% of wires as cathode lead 116 and _ bow_4, respectively. ;·- - · The two wires are separated by glass H and separated by glass to form a Η-shaped glass stem. The wire is a material that can be glazed with glass, usually Dumet wire, tungsten wire, molybdenum wire, and the like. [0033] Step - 'Provide - metal rod as anode 112 The anode (10) 114 is electrically connected at the end. And the anode 112 and one end of the metal rod as the anode 112 are electrically reversely connected to one end of the anode lead 114 by spot welding. In the embodiment of the technical solution, the metal rod is preferably a copper metal rod, and the straight 彳 i is mmi cm. Another 096142409 form number of the metal rod A0101 page 9 / 25 pages 0993213056-0 1330379 [0036] [0037] [0038] [0040] [0041] I June 18, 099 | The end face 120 is polished. The polished end face 12 can be a flat, hemispherical 'spherical' cone, concave or other shaped end face. In step one, a phosphor powder is provided and the phosphor powder is disposed on the end surface 120 of one end of the anode 112 to form a phosphor powder layer 110. The above-mentioned polishing powder is applied to the anode 11 by polishing or coating. The phosphor powder may be white fluorescent powder or monochromatic fluorescent powder, such as red, green, blue. Fluorescent powder, etc. Step 4' provides a wire as the cathode support 106, and electrically connects the cathode support 106 to the cathode lead 116. The method of connecting the cathode support 1Q6 and the cathode lead 11 6- is Welding method. In the embodiment of the technical solution, the negative electrode "% body 106 is preferably a nickel wire. , a, step five, providing a cathode emitter 108, and electrically connecting the cathode emitter 1〇8 and the cathode support body 1〇6 away from the cathode lead 11 to form a field emission pixel tube 100. Prefabricated; body. The cathode emitter 108 is a carbon nanotube long lacquer, a single carbon nanotube single carbon fiber or other field emission electron source. In the present embodiment, the cathode emitter 1 〇 8 is preferably a carbon nanotube long line. Wherein, the long length of the carbon nanotube is from 1 mm to 10 mm and the diameter is from 1 μm to 1 mm. The carbon nanotube long wire is electrically connected to the cathode support 106 through a conductive paste. When the Neflon carbon nanotube long line is used as the cathode emitter 108, the preparation of the cathode emitter 108 specifically includes the following steps: First, an array of super-aligned carbon nanotubes is provided on a substrate. 096142409 Form No. A0101 Page 10/Total 25 Page 0993213056-0 1330379 [0042] Next, insert a thin carbon nanotube thin correction film or a naphthalene from the above-mentioned super-sequential carbon nanotube array on June 18, The carbon nanotube wire 'is processed by the organic solvent to apply the mechanical external force to treat the carbon nanotube film or the carbon nanotube wire to obtain a long carbon nanotube line. [0043] When extracting a bundle of carbon nanotubes from a super-sequential carbon nanotube array, adjacent carbon nanotubes are connected to each other by a van der Waals force to form a carbon nanotube film or One nanometer carbon tube wire. In this embodiment, a long carbon nanotube tube can also be prepared by a twist spinning technique.

[0044] 最後’使上述奈米碳管長線斷裂,從而得到_陰極發射 體 108» 闺上述使奈《管紐_的$法為_㈣法或鐘射燒 灼炫斷法4米碳管長線斷裂後,奸斷點形成兩二 子發射端122。其中,採用機械切割法得到的電子發射端 122包括多個平行排列且長度-致的奈米碳管束。採用錯 射燒灼熔斷法得到的電子魏端;122包衫個突㈣^[0044] Finally, 'the above-mentioned nano carbon tube is broken, so that the cathode emitter 108» is obtained. The above-mentioned method of making the tube is _ (four) method or the clock firing method is used to break the long line of the 4 meter carbon tube. Thereafter, the traitor points form two or two sub-transmitters 122. Wherein, the electron-emitting end 122 obtained by the mechanical cutting method comprises a plurality of carbon nanotube bundles arranged in parallel and having a length-induced length. The electron Wei end obtained by the misfire burning method; 122 shirts (4) ^

射尖端300,且每個場發射嚷端3〇〇的頂端突出有一根夺 米碳管302 » $ [0046] 步驟六H«管料贿1()2,將上料發射像素 管100預製體縣在玻璃管内,得到1發射像素管100 [0047] 玻璃管為一端開口 括以下步驟: 另一端封口的_管。封裝具體包 [0048] 096142409 ==ΓΓ素營通過管壁裝- 密封時在密封處留- 笫11頁/共25頁 該玻 排氣 0993213056-0 1330379 孔 [0049] [0050] [0051] [0052] [0053] [0054] [0055] [0056] [0057] 099年 06月 18 日 其次,將該排氣心卜接真空m將殼體1G2抽真空, 使殼體102内達到-定的真空度。 取後’ &封排,得賴述場發射像素管100。 可r理解在封敦上述場發射像素管1GG前,進-步還可 以在場發射像素管⑽内設置—吸氣劑118,該吸氣劑 118設置於殼體1〇2内壁。 本實把例中,採用機械切割法或鐳射燒灼炫斷法製備奈 米碳管長線作為陰極發射體1〇8,製備方法簡單,且奈求 碳管長線中包括多個場發射尖端300 效降低該陰 極發射體108的電場遮罩效應。 細上所述,本發明確已符合發明專利之要件,遂依法提 出專利申請。惟,以上所述者僅為本發明之較佳實施例 ’自不能以此限制本案之申f請專科範輿。舉凡熟悉本案 技藝之人士援依本發明之精:神所作之等效修飾或變化, 皆應涵蓋於以下申請專利範® :内·》 ® 【圖式簡單說明】 圖1係本技術方案實施例的場發射像素管的結構示意圖。 圖2係本技術方案實施例的奈米碳管長線的電子發射端放 大示意圖。 圖3係本技術方案實施例的奈米碳管長線的電子發射端的 掃描電鏡照片。 圖4係本技術方案實施例的奈米碳管長線的場發射尖端的 096142409 表單編號A0101 第12買/共25頁 0993213056-0 1330379 099年06月18日修正替換頁 透射電鏡照片。 [0058] 圖5至圖8係本技術方案實施例的陰極發射體與陽極的位 置關係示意圖。 [0059] 圖9係本技術方案實施例的場發射像素管的製備方法的流 程示意圖。 【主要元件符號說明】The tip 300 is shot, and the top end of each field emission end 3〇〇 protrudes with a carbon nanotube 302 » $ [0046] Step 6 H «tube bribe 1 () 2, will be loaded into the pixel tube 100 preform In the glass tube, the county obtains 1 emission pixel tube 100. [0047] The glass tube is open at one end and includes the following steps: The tube sealed at the other end. Package specific package [0048] 096142409 == ΓΓ素营 through the wall of the tube - seal at the seal - 笫 11 pages / total 25 pages of the glass exhaust 0993213056-0 1330379 hole [0049] [0050] [0051] [ [0057] [0057] [0057] [0057] [0057] Next, on June 18, 099, the exhaust core is vacuumed to vacuum the housing 1G2, so that the inside of the housing 102 reaches a certain Vacuum degree. After taking the && sealing, it depends on the field emission pixel tube 100. It can be understood that before the field emission pixel tube 1GG of Fengdun, the getter 118 can be disposed in the field emission pixel tube (10), and the getter 118 is disposed on the inner wall of the casing 1〇2. In the present example, the long carbon wire of the carbon nanotube is prepared by the mechanical cutting method or the laser cauterization method as the cathode emitter 1〇8, and the preparation method is simple, and the plurality of field emission tips are reduced in the long line of the carbon tube. The electric field masking effect of the cathode emitter 108. As described above, the present invention has indeed met the requirements of the invention patent and has filed a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the application of this case. Anyone who is familiar with the skill of the present invention shall be in accordance with the essence of the present invention: the equivalent modification or variation made by God shall be covered by the following patent application:: ··· ® [Simplified description of the drawings] FIG. 1 is an embodiment of the present technical solution. Schematic diagram of the field emission pixel tube. Fig. 2 is a schematic view showing the electron emission end of the long carbon nanotube line of the embodiment of the present technical solution. Fig. 3 is a scanning electron micrograph of the electron-emitting end of the long carbon nanotube line of the embodiment of the present technical solution. 4 is a field emission tip of a long carbon nanotube of the embodiment of the present invention. 096142409 Form No. A0101 12th Buy/Total 25 Page 0993213056-0 1330379 Correction replacement page of June 18, 1999 TEM photo. 5 to FIG. 8 are schematic diagrams showing the positional relationship between a cathode emitter and an anode according to an embodiment of the present technical solution. 9 is a schematic flow chart of a method of fabricating a field emission pixel tube according to an embodiment of the present technical solution. [Main component symbol description]

[0060] 場發射像素管 :100 [0061] 殼體:102 [0062] 陰極:104 [0063] 陰極支撐體: 106 [0064] 陰極發射體: 108 [0065] 螢光粉層:110 [0066] 陽極:11 2 [0067] 陽極引線:114 [0068] 陰極引線:116 [0069] 吸氣劑:118 [0070] 端面:120 [0071] 電子發射端: 122 [0072] 出光部:124 [0073] 場發射尖端: 300 表單编號A0101 096142409 第13頁/共25頁 0993213056-0 1330379 [0074] 奈米碳管:302 099年06月18日核正替換頁Field emission pixel tube: 100 [0061] Housing: 102 [0062] Cathode: 104 [0063] Cathode support: 106 [0064] Cathode emitter: 108 [0065] Phosphor layer: 110 [0066] Anode: 11 2 [0067] Anode lead: 114 [0068] Cathode lead: 116 [0069] Getter: 118 [0070] End face: 120 [0071] Electron emitting end: 122 [0072] Light exiting section: 124 [0073] Field emission tip: 300 Form number A0101 096142409 Page 13 of 25 0993213056-0 1330379 [0074] Nano carbon tube: 302 June 18, 1999, nuclear replacement page

096142409 表單編號A0101 第14頁/共25頁 0993213056-0096142409 Form No. A0101 Page 14 of 25 0993213056-0

Claims (1)

1330379 099年06月18日按正替換頁 七、申請專利範圍: 1 . 一種場發射像素管,其包括一殼體以及置於殼體内的一陰 極,一螢光粉層和一陽極,該陰極與陽極之間間隔設置, 其中,該陰極包括一陰極支撐體與一陰極發射體,該陰極 發射體一端與陰極支撐體電性連接,其改良在於,該陽極 為一桿狀體且包括一端面,該螢光粉層設置在該陽極端面 上。 2 .如申請專利範圍第1項所述的場發射像素管,其中,所述1330379 On June 18, 099, according to the replacement page, the patent application scope: 1. A field emission pixel tube, comprising a casing and a cathode disposed in the casing, a phosphor powder layer and an anode, The cathode and the anode are spaced apart from each other, wherein the cathode comprises a cathode support and a cathode emitter, and one end of the cathode emitter is electrically connected to the cathode support, and the improvement is that the anode is a rod and includes a The end face, the phosphor layer is disposed on the anode end face. 2. The field emission pixel tube of claim 1, wherein the 的端面為拋光的平面、半球面、球面、錐面或凹面。 3 .如申請專利範圍第1項所述的場發射像素管,其中,所述 的陽極一端通過陽極引線連接到殼體外,端面設置在陽極 另一端。 4 .如申請專利範圍第1項所述的場發射像素管,其中,所述 的陽極為一金屬桿。 5 .如申請專利範圍第4項所述的場發射像素管,其中,所述 的金屬桿直徑為100微米至1厘米。The end faces are polished flat, hemispherical, spherical, tapered or concave. 3. The field emission pixel tube of claim 1, wherein one end of the anode is connected to the outside of the casing through an anode lead, and the end surface is disposed at the other end of the anode. 4. The field emission pixel tube of claim 1, wherein the anode is a metal rod. 5. The field emission pixel tube of claim 4, wherein the metal rod has a diameter of from 100 micrometers to 1 centimeter. 6 .如申請專利範圍第1項所述的場發射像素管,其中,所述 ..; 的陰極發射體為一奈米碳管長線、單根奈米碳管或單根奈 米碳纖維。 7.如申請專利範圍第6項所述的場發射像素管,其中,所述 的奈米碳管長線包括一電子發射端,該電子發射端為奈米 碳管長線遠離陰極支撐體的一端。 8 .如申請專利範圍第7項所述的場發射像素管,其中,所述 的電子發射端包括多個突出的場發射尖端。 9.如申請專利範圍第8項所述的場發射像素管,其中,所述 096142409 表單編號A0101 第15頁/共25頁 0993213056-0 1330379 099年06月18日修正替換頁 的場發射尖端的頂端突出有一根奈米碳管。 10 .如申請專利範圍第7項所述的場發射像素管,其中,所述 的電子發射端正對陽極端面設置、斜對陽極端面設置或設 置在陽極端面附近。 11 .如申請專利範圍第10項所述的場發射像素管,其中,所述 的電子發射端與陽極端面的距離小於5毫米。 12 .如申請專利範圍第1項所述的場發射像素管,其中,所述 的殼體為一中空透明的圓柱體、立方體或三棱枉。6. The field emission pixel tube of claim 1, wherein the cathode emitter of the .. is a carbon nanotube long line, a single carbon nanotube or a single carbon fiber. 7. The field emission pixel tube of claim 6, wherein the nano carbon tube long line comprises an electron emission end, wherein the electron emission end is an end of the nano carbon tube long line away from the cathode support. 8. The field emission pixel tube of claim 7, wherein the electron emission end comprises a plurality of protruding field emission tips. 9. The field emission pixel tube of claim 8, wherein the 096142409 form number A0101 page 15 / total 25 page 0993213056-0 1330379 099 June 18 correction of the field emission tip of the replacement page A carbon nanotube protrudes from the top. The field emission pixel tube of claim 7, wherein the electron emission end is disposed opposite to the anode end surface, obliquely to the anode end surface, or disposed adjacent to the anode end surface. The field emission pixel tube of claim 10, wherein the distance between the electron emitting end and the anode end surface is less than 5 mm. The field emission pixel tube of claim 1, wherein the housing is a hollow transparent cylinder, a cube or a triangular ridge. 13 .如申請專利範圍第1項所述的場發射像素管,其中,所述 的場發射像素管進一步包括一吸氣劑位於殼體内。 096142409 表單編號A0101The field emission pixel tube of claim 1, wherein the field emission pixel tube further comprises a getter located in the housing. 096142409 Form number A0101 第16頁/共25頁 0993213056-0Page 16 of 25 0993213056-0
TW96142409A 2007-11-09 2007-11-09 Field emission pixel tube TWI330379B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96142409A TWI330379B (en) 2007-11-09 2007-11-09 Field emission pixel tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96142409A TWI330379B (en) 2007-11-09 2007-11-09 Field emission pixel tube

Publications (2)

Publication Number Publication Date
TW200921740A TW200921740A (en) 2009-05-16
TWI330379B true TWI330379B (en) 2010-09-11

Family

ID=44727980

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96142409A TWI330379B (en) 2007-11-09 2007-11-09 Field emission pixel tube

Country Status (1)

Country Link
TW (1) TWI330379B (en)

Also Published As

Publication number Publication date
TW200921740A (en) 2009-05-16

Similar Documents

Publication Publication Date Title
CN101441972B (en) Field emission pixel tube
TWI467616B (en) Field emission cathode device and field emission equipment using the same
JP2003123623A (en) Carbon nano tube for electron emitting source and its manufacturing method
US20140185777A1 (en) X-ray tube
CN102074442A (en) Field emission electronic device
CN102024653B (en) Field emission unit and field emission pixel tube
TWI330379B (en) Field emission pixel tube
CN101425443B (en) Field emission pixel tube
TWI356438B (en) Field emission pixel tube
TWI362676B (en) Field emission pixel tube
CN101441969B (en) Field emission pixel tube
CN102013376B (en) Field emission unit and field emission pixel tube
TWI393160B (en) Field emission cathode structure and display using the same
CN102024654B (en) Field emission pixel tube
TWI246103B (en) Carbon nanotube substrate structure and the manufacturing method thereof
TWI309428B (en) Emission source having carbon nanotube
TWI425553B (en) Method for making carbon nantoube wire tip and method for making field emission structure
TW201415509A (en) Field emitter array and field emission device
TWI436399B (en) The field emission unit and the field emission pixel tube
TWI436398B (en) The field emission unit and the field emission pixel tube
TWI427663B (en) Field emission pixel tube
TW200905714A (en) Field emission pixel tube
TWI417924B (en) Field emission electronic device