TWI309428B - Emission source having carbon nanotube - Google Patents

Description

1309428 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種場發射電子源，尤其涉及一種夺米碳 管場發射電子源。 【先前技術】 奈米碳管（Carbon Nanotube，CNT)係一種新型碳材 料，由日本研究人員iijima於1991年發現，請束見 "Helical Microtubules of Graphitic Carbon", S. Iijim1309428 IX. Description of the Invention: [Technical Field] The present invention relates to a field emission electron source, and more particularly to a field source for capturing rice carbon nanotubes. [Prior Art] Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher iijima in 1991. Please see "Helical Microtubules of Graphitic Carbon", S. Iijim

Nature, vol. 354，p56 (1991)。奈米碳管具有極優異之導’ 電性肖b、良好之化學穩定性與大長徑比，且其且 接 之頂部表面積（頂部表面積愈小，其^部 碳官於場發射真空電子源領域具有潛在之應 之研絲明，奈米碳管係已知最好之場發射 (i於1，)，可傳輸極大之電流密度 二二命$ ’故非常適合作爲—種極佳點電子 電子顯微鏡（⑹一— m1c職，）等設備之電子_ Electron 體上。目前，夺乎#其二!該不未奴官形成於該導電基 機械方法與原之方法主要包括 微鏡操縱合成好之太以：：'^械方核通過原子力顯 導電基體上，此種將不米碳管用導電膠固定到 另，通過該方法tHi單’但操作不容易且效率低。 係通過導電膠粘覆於導以:場子源中奈米碳管 電基體之電接觸狀離=基用時，奈米碳管與導 射性能。、佳，不易充分發揮奈米碳管之場發 1309428 法係、先在導電基體上鍵上金屬催化劑，然後 太沈積或電狐放電等方法在導電基體上直接生 it ίίί ’此種方法雖然、操作簡單，奈^炭管與導電 =觸良好。然’奈米碳管與導電紐之結合能力 恭ίίϊ時奈ί碳管易脫落或被電場力拔出，從而導 源&壞H由於該方法無法控制奈米碳 ί方法之、生産成Γίίΐ效率低且可控性差之問題。另， 付管應用於場發射電子源往往需要通過奈 t欲電流。根據福勒—諾德漢（Fowler_Nordheim， π發射ί搞琢發射電流之大小決定於局域電場大小及作為 =電二先前之; (eV)，僅與金屬鶴之逸出功相當。 、 【發明内容】 胃 緊密接與導電基體結合 大％卷射電流之奈米碳管場發射電子源。 - 兮導ϊΐίΐΐ管場發射電子源，其包括··—導電基體， 該導電基體具有一頂部，·—奈半雜总子电娄瓶 ΙΖΐ體頂部電性連接，另二端:該 表面修飾層其:表場發射電子源進-步包括-之表面】至====於_碳管 修飾層之㈣功低於奈米碳管之逸^力_之·~~，該表面 該表面修飾層覆蓋整個奈米碳f解電基體之表面。 1309428Nature, vol. 354, p56 (1991). The carbon nanotubes have excellent conductivity, electrical conductivity, good chemical stability and large aspect ratio, and they are connected to the top surface area (the smaller the top surface area, the carbon emission from the field emission vacuum electron source) The field has the potential to be researched, and the carbon nanotubes are known to have the best field emission (i, 1,), which can transmit a very large current density of two or two life's, so it is very suitable as an excellent point electron. Electron microscopy ((6) one - m1c job,) and other equipment electronic _ Electron body. At present, it is the second of the two! The non-naked official formed in the conductive mechanical method and the original method mainly includes micro-mirror manipulation synthesis Too:: '^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ In the field source: the electrical contact of the carbon nanotube electric matrix in the field source = the base, the carbon nanotubes and the guiding performance, good, not easy to fully exert the field of the carbon nanotubes 1309428, First, a metal catalyst is bonded to the conductive substrate, and then deposited too Electric fox discharge and other methods directly on the conductive substrate it ίίί 'This method is simple, the operation is simple, the carbon tube and the conductive = good contact. However, the combination of the carbon nanotube and the conductive button is good. The tube is easy to fall off or is pulled out by the electric field force, so that the source & bad H cannot control the nano carbon method, and the production is ΐίίΐ low efficiency and poor controllability. In addition, the tube is applied to the field emission electron source. It is often necessary to pass the current to the current. According to Fowler_Nordheim, the magnitude of the emission current is determined by the magnitude of the local electric field and as the previous == (eV), only with the metal crane The work function is equivalent. [Inventive content] The stomach is closely connected to the conductive matrix to combine the large-volume current of the carbon nanotube field emission electron source. - 兮 ϊΐ ΐΐ ΐΐ ΐΐ ΐΐ 发射 发射 发射 发射 发射 ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ ΐΐ The conductive substrate has a top, and the nano-hetero-hybrid electrode is electrically connected at the top of the body, and the other end: the surface-modifying layer: the field-emitting electron source further includes a surface-to === =于_Carbon repair (Iv) lower than the power level of the carbon nanotube of Yi ^ _ ~ ~ power, the surface of the surface modification layer covers the surface of the base SOLUTIONS entire nanocarbon f. 1309428

培Training

面修飾層材料爲碳化鍅或碳化鈦。 功爲3=2 功4 3· 32電子伏㈣碳化鈦之逸出 該表·飾層之厚度爲1〜1〇夺米。 該表面修飾層之厚度爲5奈米。 ϊίίί:ί2部爲錐形、圓臺形或柱形。 $電基體材料可選自鎢、金、鉬或鉑。 該不米碳管爲多壁奈米碳管。 ί J米碳管之長度爲1〇,〇微米，直徑爲卜50太半 度尸微米，直徑爲么: 發射電子源之場發射電流為⑽微安 %發射電流密度為5. 7xl〇7A/cm2。 攻 斑導’奈米—射電子源中奈米碳管 導電基體、纟σ合緊在、、電性連接良好，太 面修飾層可以有效降低奈米碳管場發射原；子發2 時維持奈米碳管原有之 相同大小的發射電場作用下，該太半 3 有更高之電子發射密度與發射i流^ .子源具 【實施方式】 下面將結合附圖對本發明作進一步之詳細說明。The surface modification layer material is tantalum carbide or titanium carbide. The work is 3=2 work 4 3·32 electron volts (4) The escape of titanium carbide The thickness of the watch and the veneer is 1~1〇. The surface modification layer has a thickness of 5 nm. Ϊίίί: The ί2 part is a cone, a truncated cone or a column. The electrical matrix material can be selected from the group consisting of tungsten, gold, molybdenum or platinum. The carbon nanotube is a multi-walled carbon nanotube. x 米 A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A Cm2. In the nano-ejecting electron source, the nano carbon tube conductive matrix, 纟σ is tight, and the electrical connection is good. The surface modification layer can effectively reduce the carbon nanotube field emission original; Under the action of the same size of the emission electric field of the carbon nanotubes, the solar half has a higher electron emission density and emission i stream. [Embodiment] The present invention will be further described in conjunction with the accompanying drawings. Description.

請參閱圖1.與圖2,本發明實施例提供 =電子源1〇，該奈米碳管場發射電子源f J 電基體12、一奈米碳管14與一表面修飾層16。該 ΐη電材料製成’如鶴、金、鉬、鉑等。爲測量方便1 例導電基體丨2採用表面鍍有金層之原子力顯微鏡 18 (Atomic Force Microscope，AFM)之探針。該導電基 體12具有一頂部122，該頂部122爲錐形。該奈米碳管14 之第一端142與該導電基體12之頂部122電性連接，並 過凡德瓦爾力附著於該導電基體12上。該奈米碳管14之 第二端144沿該導電基體12之頂部122向遠離導電基 8 1309428Referring to FIG. 1 and FIG. 2, an embodiment of the present invention provides an electron source 1〇, the carbon nanotube field emission electron source f J an electric substrate 12, a carbon nanotube 14 and a surface modification layer 16. The ΐn electric material is made of, for example, crane, gold, molybdenum, platinum, or the like. For the convenience of measurement, a conductive substrate 丨2 is probed by an atomic force microscope 18 (AFM) with a gold layer on its surface. The conductive substrate 12 has a top portion 122 that is tapered. The first end 142 of the carbon nanotube 14 is electrically connected to the top portion 122 of the conductive substrate 12 and is attached to the conductive substrate 12 via a Van der Waals force. The second end 144 of the carbon nanotube 14 is away from the conductive base 8 along the top 122 of the conductive substrate 12.

12之方向延伸，作爲該場發射電子源ίο之電子發射端。 本實把例中，該奈米碳管14爲一多壁奈米碳管，其直徑範 圍爲1〜50奈米’優選爲15奈米，長度範圍爲10〜100微米， 優選爲50微米。該表面修飾層16浸潤于奈米碳管14之表 面，且至少覆蓋該奈米碳管14作爲電子發射端之第二端 144之表面。該表面修飾層π材料之逸出功低於奈米碳管 14的逸出功。優選的，該表面修飾層16選用碳化鈦或碳 化锆，其逸出功分別爲3. 82電子伏特與3. 32電子伏特。 該^面修飾層16之厚度爲1〜10奈米，優選爲5奈米。本 實施例中，該表面修飾層16也可覆蓋整個奈米碳管14與 ，電基體12之表面。由於奈米碳管14作爲電子發射端之 第二端144表面浸潤並覆蓋有比奈米碳管14更低逸出功之 表面修飾層16，在相同大小之電場作用下，該奈米碳管場 發射源10之發射電流比先前之奈米碳管場發射電子源之 發射電流顯著增大。本實施例中採用碳化鈦或碳化錘作爲 表面修飾層16之奈米碳管場發射電子源1〇之場發射電流 可達到100微安培，優選爲45〜65微安培，電流發射密度 可達到5. 7xl〇7A/cm2。進一步的，經測量，本實施例奈米 碳管場發射電子源1〇場發射電流爲45〜65微安培時，可^ 續發射電子5萬秒未發現衰竭現象，因而，該經過表面修 飾之奈米石反管場發射電子源1〇具有良好之使用壽命。 另，本發明實施例中導電基體12還可依實際需要执叶 ，其他形狀。該導電基體12之頂部也可爲其他形狀，二圓 ，形或細小之柱形，而不限於錐形。本實施例之奈米碳管 場發射電子源10可應用於場發射平板顯示器、電ϋ、^ 波放大器、X射線源或電子束平板印刷等場發射電 請參閱圖3與圖4，本發明實施例提供一種劁太 碳管場發射電子源之方法，主要由以下步驟組成。’τ〃、 (一）提供兩導電基體32與42 ’其分別具有錐形頂 9 1309428 部322與422。使該兩頂部322與422相對設置，並間隔 開一定距離。移取少量含奈米碳管之溶液5{)於該兩頂部 322與422之間，並使兩者能共同浸入該溶液5〇中。 (一）對該兩導電基體32與42施加一交流電壓， 直到至^一奈米碳管組裝於該兩頂部322與422之間。 (三） 切斷兩導電基體32與42之間之電流並移除上 述兩導電基體相對兩頂部322與422之間之溶液5〇。 (四） 分開上述兩相對之導電基體32與42，以使至 碳管附著於至少—導電基體之頂部，形成奈米碳 官％發射電子源。 (五） 修飾該奈米碳管之表面使該場發射電子源具 更低的逸出功。 ” 在本實施例中，所述之導電基體32與42均採用表面 鍍金之原子力顯微鏡探針。導電基體32與42也可以 其他導電材料製作，如鎢、金、鉬、鉑等，苴自 ，實際需要設計。頂部322與422也可爲其^形狀;^如圓 臺形或細小之柱形，而不限於錐形。另，當頂部322與似 之端面爲平面時，在組裝奈米碳管之過程中最 ，與422之部分端面相對設置，如兩端面之邊^兩目^ 置。另，該兩頂部322與422之間之距離應根據所採用之 奈米碳管長度加以設定’最好與奈米碳管長餘近 所述之含奈米碳管的溶液5〇係以異丙醇爲 六 劑’通過超聲震蕩之方法使奈米碳管在其 到的。爲使該溶液5G歡，還可加入少量的 奈米碳管爲採用低壓化學氣相沈積（L〇:pr:_ Chemical Vapor D印0Siti0n，LP-CVD)合成之 管。當然，溶液50還可採用其他方法製備 溶劑、穩定劑或者增加分_濾等處 ;以 1309428 .、 穩定的奈米碳管溶液爲宜，不必以具體實施例爲限。 . 另，溶液50之濃度可能影響後期被組裝之夺米碳管數 量二一般，溶液50濃度越大，後期則較容易組裝上多根奈 米碳管。因此，可根據實際需要調配溶液5〇之濃度，如g 組裝一根奈米碳管，則應儘量降低溶液5〇之濃度。反之1 也可以通過調整溶液50之濃度，在一定程度上控制被 之奈米碳管數量。爲避免發射電子時，奈米碳管之間之相 互干擾影響，本實施例只組裝一根奈米碳管在導電基體上。 溶液50可由吸管、移液管、注射器或其他適宜之裝置 移取並施加於導電基體頂部322與422之間。所施加之溶 液50不宜過多，以使該兩頂部322與422能共同浸入同一 ，溶液50即可。另，也可將兩頂部322與422直接浸入少 1由燒杯等容器盛放之溶液5〇中。該溶液5〇需移除時， 只需同樣通過吸管、移液管、注射器或其他適宜之裝置移 T即可，當兩頂部322與422係直接浸入少量由燒杯等容 器盛放之溶液50中時，只需將兩頂部322與422從溶液 50中移出即可。 另外，步驟（二）中，所述之交流電壓之峰值最好在 10伏以内，頻率在1千至1〇兆赫茲之間。本實施例主要 據雙向電泳法原理：在交流電場中，溶液50中之奈米 妷官向電場強度大之方向運動，最終運動到場強最大之兩 頂部322與422相對之區域，並被吸附到該兩頂部322與 422上。此後’奈米碳管依靠與該兩頂部322與422之凡 德瓦爾力牢固吸附在頂部322與422之表面上。'一般，通 電時間只需幾秒至幾十秒，因此該組裝方法耗時短，效率 高。 步驟（五）中，該奈米碳管表面之修飾方法進一步包 括以下步驟： 首先’在該奈来碳管之表面形成—金屬層，該金屬層 選用具有較低逸出功’較高之炫點，且與奈米碳管表面具 11 1309428Extending in the direction of 12, as the electron emission end of the field emission electron source ίο. In the present embodiment, the carbon nanotube 14 is a multi-walled carbon nanotube having a diameter ranging from 1 to 50 nm, preferably 15 nm, and a length ranging from 10 to 100 μm, preferably 50 μm. The surface modification layer 16 is infiltrated on the surface of the carbon nanotube 14 and covers at least the surface of the carbon nanotube 14 as the second end 144 of the electron-emitting end. The work function of the surface modification layer π material is lower than the work function of the carbon nanotubes 14. I. The electrons of the surface modification layer 16 are selected from the group consisting of titanium carbide or zirconium carbide, and the work function is 3.82 electron volts and 3.32 electron volts, respectively. The thickness of the surface modification layer 16 is 1 to 10 nm, preferably 5 nm. In this embodiment, the surface modification layer 16 may also cover the entire surface of the carbon nanotube 14 and the electrical substrate 12. Since the carbon nanotube 14 is infiltrated as the surface of the second end 144 of the electron-emitting end and covered with the surface modification layer 16 having a lower work function than the carbon nanotube 14, the carbon nanotube field is under the action of an electric field of the same magnitude. The emission current of the source 10 is significantly increased compared to the emission current of the previous nanotube field emission electron source. In this embodiment, the field emission electron current of the carbon nanotube field emission electron source using titanium carbide or carbonized hammer as the surface modification layer 16 can reach 100 microamperes, preferably 45 to 65 microamperes, and the current emission density can reach 5 7xl〇7A/cm2. Further, after measuring that the field emission current of the carbon nanotube field emission electron source of the present embodiment is 45 to 65 microamperes, the electron emission can be continuously emitted for 50,000 seconds, and thus the surface modification is performed. The nano-stone anti-tube emission electron source has a good service life. In addition, in the embodiment of the present invention, the conductive substrate 12 can also be implemented in other shapes according to actual needs. The top of the conductive substrate 12 may also have other shapes, two circles, a shape or a small column shape, and is not limited to a taper. The carbon nanotube field emission electron source 10 of the embodiment can be applied to field emission flat panel display, electric field, wave amplifier, X-ray source or electron beam lithography, etc. Please refer to FIG. 3 and FIG. 4, the present invention The embodiment provides a method for emitting electron source from a carbon nanotube field, which is mainly composed of the following steps. 'τ〃, (1) provides two conductive substrates 32 and 42' which respectively have tapered tops 9 1309428 portions 322 and 422. The two tops 322 and 422 are disposed opposite each other and spaced apart by a certain distance. A small amount of carbon nanotube-containing solution 5{) was pipetted between the two tops 322 and 422, and the two were co-impregnated into the solution. (1) An alternating voltage is applied to the two conductive substrates 32 and 42 until a carbon nanotube is assembled between the top portions 322 and 422. (iii) cutting off the current between the two conductive substrates 32 and 42 and removing the solution 5 上 between the two conductive substrates opposite the tops 322 and 422. (d) separating the two opposite conductive substrates 32 and 42 such that the carbon tube is attached to at least the top of the conductive substrate to form a nanocarbon emission electron source. (5) Modifying the surface of the carbon nanotube to make the field emission electron source have a lower work function. In the embodiment, the conductive substrates 32 and 42 are both surface-gold-plated atomic force microscope probes. The conductive substrates 32 and 42 can also be made of other conductive materials, such as tungsten, gold, molybdenum, platinum, etc. Actual design is required. The tops 322 and 422 can also be shaped as ^; for example, a truncated cone shape or a small column shape, not limited to a taper. In addition, when the top portion 322 and the end surface are plane, the nano carbon is assembled. The most part of the process is set opposite to the end face of 422, such as the edge of the two end faces. The distance between the two tops 322 and 422 should be set according to the length of the carbon nanotube used. It is best to use a carbon nanotube containing a solution of the carbon nanotubes in the vicinity of the solution of the carbon nanotubes with isopropyl alcohol as the six doses of 'the carbon nanotubes by means of ultrasonic vibration. To make the solution 5G Huan, a small amount of carbon nanotubes can also be added to the tube synthesized by low pressure chemical vapor deposition (L: pr: _ Chemical Vapor D-S0Siti0n, LP-CVD). Of course, solution 50 can also be prepared by other methods. , stabilizer or increase the point _ filter, etc.; to 1309428., stable nai The carbon nanotube solution is suitable, and it is not necessary to be limited to the specific examples. In addition, the concentration of the solution 50 may affect the number of the carbon nanotubes assembled in the later stage. Generally, the concentration of the solution 50 is larger, and it is easier to assemble multiple roots in the later stage. Nano carbon tube. Therefore, according to the actual needs of the concentration of 5 溶液 solution, such as g to assemble a carbon nanotube, you should try to reduce the concentration of the solution 5 。. Otherwise 1 can also adjust the concentration of the solution 50, To some extent, the number of carbon nanotubes controlled by the carbon nanotubes is controlled. In order to avoid the mutual interference between the carbon nanotubes when emitting electrons, this embodiment only assembles a carbon nanotube on the conductive substrate. The solution 50 can be made by a straw. A pipette, syringe or other suitable device is removed and applied between the tops 322 and 422 of the conductive substrate. The applied solution 50 should not be so excessive that the two top portions 322 and 422 can be immersed together in the same solution 50. Alternatively, the two tops 322 and 422 can be directly immersed in a solution of less than 1 in a container such as a beaker. The solution 5 needs to be removed only by a pipette, a pipette, a syringe or the like. Device By shifting T, when the two tops 322 and 422 are directly immersed in a small amount of the solution 50 contained in a container such as a beaker, it is only necessary to remove the two tops 322 and 422 from the solution 50. In addition, in step (2) The peak value of the alternating voltage is preferably within 10 volts and the frequency is between 1 and 1 megahertz. This embodiment is mainly based on the principle of two-dimensional electrophoresis: in the alternating electric field, the nanometer in the solution 50 Moving toward the direction of the electric field strength, and finally moving to the area where the top of the two fields 322 and 422 are the largest, and is adsorbed to the two tops 322 and 422. Thereafter, the carbon nanotubes rely on the two tops 322 and 422. The van der Waals force is firmly adsorbed on the surfaces of the tops 322 and 422. 'Generally, the power-on time is only a few seconds to tens of seconds, so the assembly method is short and efficient. In the step (5), the modification method of the surface of the carbon nanotube further comprises the following steps: First, forming a metal layer on the surface of the carbon nanotube, the metal layer is selected to have a lower work function. Point and surface with carbon nanotubes 11 1309428

有良好浸潤性之材料。本實施例中，該金屬層選用金屬鈦 或金屬錄。該金屬層之形成方法包括通過磁控濺射或電子 束蒸發的方法形成一厚度爲1〜10奈米之金屬層於該奈米 碳管表面。優選地，本實施例通過磁控濺射之方法形成一 厚度爲5奈米之金屬結層或金屬鈦層於該奈米碳管與附著 有奈米碳管之導電基體表面。 然後，在真空環境中，在該附著有奈米碳管之導電基 體上施加一較高電流發射電子預定時間，以使該奈米碳管 表面之金屬層與奈米碳管發生化學反應被碳化而形成表面 修飾層:完成對奈米碳管表面之修飾。本實施例中，該通 電時間爲30分鐘至2小時，優選爲30分鐘。如果時間太 =該金屬^不能完全被碳化，時間太長則會影響到奈米碳 管之使用壽命。優選地，形成之表面修飾層爲氧化鈦或氧 化錯層另，該奴化奈米碳管表面金屬層之過程也可通過 退火處理來實現。 本技術領域技術人員應明白，由於奈米碳管主要通過 其-端發射電子，實際上只需控制軸—金屬層覆蓋該 電:端，然後進-步碳化修飾該奈米碳管 另’可採用監測系統對整個奈米碳管組裝過程 而Γ見即時監控、即時調整，提高成品率。例如姐 ΐ據ΐ碳管之兩頂部322與422係處於斷路狀 進而，整個組裝過程均可實現自動化操作^監測，避 1309428 ίίϊ或半手動操作之偏差以及化學氣相沈積法中奈米碳 ^ 之不可控性，提高生産效率，增強可控性，同時所 吊之生產設備解’生産成本低，適合進行大規模生産。 ，本發明實施例可進一步製造包括多個奈米碳管場 if f子社奈米碳f場發射陣_於如平板場發射顯示 ^中作爲電子發射源。可將形成有多個導電基體之一陰極 電極層直接浸人含有奈米碳管之溶液巾。通過施加電壓於A material with good wettability. In this embodiment, the metal layer is selected from titanium metal or metal. The method of forming the metal layer comprises forming a metal layer having a thickness of 1 to 10 nm on the surface of the carbon nanotube by magnetron sputtering or electron beam evaporation. Preferably, in this embodiment, a metal junction layer or a metal titanium layer having a thickness of 5 nm is formed by magnetron sputtering on the surface of the carbon nanotube and the conductive substrate to which the carbon nanotube is attached. Then, in a vacuum environment, a higher current is emitted on the conductive substrate to which the carbon nanotube is attached to emit electrons for a predetermined time, so that the metal layer on the surface of the carbon nanotube is chemically reacted with the carbon nanotube to be carbonized. The surface modification layer is formed: the modification of the surface of the carbon nanotube is completed. In this embodiment, the power-on time is from 30 minutes to 2 hours, preferably 30 minutes. If the time is too = the metal ^ can not be completely carbonized, the time is too long will affect the service life of the carbon nanotubes. Preferably, the surface modifying layer formed is titanium oxide or a oxidized stagger layer, and the process of tempering the surface metal layer of the carbon nanotube can also be achieved by annealing. Those skilled in the art should understand that since the carbon nanotubes mainly emit electrons through their ends, it is actually only necessary to control the shaft-metal layer to cover the electricity: the end, and then further carbonization to modify the carbon nanotubes. The monitoring system is used for real-time monitoring and immediate adjustment of the entire carbon nanotube assembly process to improve the yield. For example, the two tops 322 and 422 of the carbon tube are in an open circuit, and the entire assembly process can be automated. Monitoring, avoiding deviations from 1309428 ίίϊ or semi-manual operation, and nanocarbon in chemical vapor deposition. Uncontrollable, improve production efficiency, enhance controllability, and at the same time, the production equipment that is hoisted has low production cost and is suitable for mass production. The embodiment of the present invention can further manufacture a plurality of carbon nanotubes, if f, a nano-carbon f field array, as shown in the flat field emission display ^ as an electron emission source. The cathode electrode layer on which one of the plurality of conductive substrates is formed may be directly immersed in a solution towel containing a carbon nanotube. By applying a voltage to

ίϊΐί極層與另—可活動之導電基體，並將該可活動之 ，，頂。卩逐=罪近形成於陰極電極層之導電基體頂 二官分別組裝於該多個導電基體上，最後通 過修2不米碳管表面形成表面修飾層即可。 …請參閱圖5,從掃描電子顯微鏡照片可看出，奈米碳 官被組裝^子力顯微鏡之尖端，並且已被拉直。其係因 f奈米碳管組裝於兩卿過財在電場巾被極化産生電偶 ，距，兩端帶有電荷，電場對其作用力有—沿其轴向之分 力’使奈米碳管拉伸變直。 收餘ΐ參經測量’本實施例通過碳化鈦或碳化鍅Ϊΐ 极 极 极 另 另 另 另 另 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可卩 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = ...See Figure 5. As can be seen from the scanning electron micrograph, the nanocarbon officer is assembled at the tip of the force microscope and has been straightened. It is caused by the assembly of the carbon nanotubes in the two carbons. The electric field is polarized to produce galvanic couples. The distance between the two ends is charged. The electric field has its force—the component along its axial direction. The carbon tube is stretched and straightened. The remaining enthalpy is measured. 'This example passes through titanium carbide or tantalum carbide.

官場發射電子源之開啓電場贿分別爲約 1丄2 v/p (伏特/微米）與105 v//zm，低 米碳管場發射電子源（社5 V/M) 場發射電子源場發射電流也㈣增A。另，經過=^ 過石反化^或碳化錯修飾後之奈米碳管場發射電子源對鹿于 開啓電場強度的奈米碳管拔出力分別爲35 2 nN (納牛 1 與26· 2nN，低於修飾前之奈米碳管場發射電 (54· 4nN)。因此’修飾後之奈米碳管 太平、 碳管與導電基體結合緊密，且電性連接良好。电亍原、中不赤 本發明奈米碳管場發射電子源之組裝方法 幾^幾十秒，耗時短，效率高。並且，整個過= 同時所需之生產設備簡單，生產成本:羊適模 13 1309428 i;場ί射效降低奈米 下，該奈料管場發射電子·^發之情況 發射電流。 本技術領域技術人員應明白，本發 =ΐ=ΐ可通過現有的其他方式如 縱减法絲位生長法域奈#碳管於導 奈米碳管的電子發射端部形成具有低 ^The electric field source of the official field emission electron source is about 1丄2 v/p (volts/micron) and 105 v//zm, respectively. The low-carbon carbon field emission electron source (5 V/M) field emission electron source field emission The current is also increased by four (A). In addition, after the =^ stone reversal or carbonization error modification, the carbon nanotube field emission electron source has a pull-out force of 35 2 nN for the deer opening electric field strength, respectively (Nano 1 and 26· 2nN, lower than the nano-carbon nanotube field emission before modification (54·4nN). Therefore, the modified carbon nanotube is too flat, the carbon tube is tightly combined with the conductive matrix, and the electrical connection is good. The assembly method of the electron source of the carbon nanotube field emission in the present invention is several tens of seconds, which is short in time and high in efficiency. Moreover, the entire production equipment required at the same time is simple, and the production cost is: Yang appropriate mold 13 1309428 i; ίThe effect of lowering the nanometer, the emission field of the electron field is emitted by the tube field. It will be understood by those skilled in the art that the present invention can be passed through other existing methods such as the longitudinal reduction method. Nai #carbon tube formed at the electron emission end of the carbon nanotubes has a low ^

修也刊樣增大奈米碳管場發魏子㈣發射電^ 提出發Τ已符合發明專利之要件，遂依法 ^出專利申‘惟，以上所述者僅為本發明之較佳實施例， 自不能以此_本案之申請專利範圍。舉凡熟悉本案技蓺 之人士援依本發明之精神所作之等效修飾或 ς 蓋於以下申請專利範_。 【圖式簡單說明】 一圖1爲本發明實施例之奈米碳管場發射電子源之立體 示意圖；The revision also increases the carbon nanotube field and sends Weizi (4) the launching power. 2. The hairpin has been in compliance with the requirements of the invention patent, and the patent application is only in accordance with the law. However, the above is only a preferred embodiment of the present invention. I can't use this _ this patent application scope. Any person skilled in the art will be able to use the equivalent modifications of the spirit of the present invention or the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a field emission electron source of a carbon nanotube according to an embodiment of the present invention;

向之電子發射密度與 圖2爲圖1中π部分縱向剖視圖； 圖3爲本發明實施例奈米碳管場發射電子源之 法之步驟示意圖； 圖4爲本發明實施例組裝奈来碳管場發射電子源之 置示意圖； ’、 圖5爲本發明實施例奈米碳管場發射電子源之掃 子顯微鏡照片。 ^圖6為本發明實施例之奈米碳管場發射電子源修飾前 後之電流-電壓曲線對比示意圖。 【主要元件符號說明】 奈米碳管場發射電子源 1〇FIG. 3 is a longitudinal cross-sectional view of the π portion of FIG. 1; FIG. 3 is a schematic diagram showing the steps of a method for emitting electron source of a carbon nanotube field according to an embodiment of the present invention; FIG. 4 is a view of assembling a carbon nanotube of the embodiment of the present invention. A schematic diagram of a field emission electron source; ', FIG. 5 is a micrograph of a scanning electron microscope of a carbon nanotube field emission electron source according to an embodiment of the present invention. Figure 6 is a schematic diagram showing the comparison of current-voltage curves before and after modification of the carbon nanotube field emission electron source according to an embodiment of the present invention. [Main component symbol description] Nano carbon tube field emission electron source 1〇

導電基體 12 H 14Conductive substrate 12 H 14

1309428 頂部 122 ， 322 ， 422 奈米碳管 14 第一端 142 第二端 144 表面修飾層 16 原子力顯微鏡 18 溶液 50 交流電壓 60 151309428 Top 122, 322, 422 Carbon nanotubes 14 First end 142 Second end 144 Surface finish 16 Atomic force microscope 18 Solution 50 AC voltage 60 15

Claims (1)

:1309428 、申請專利範圍 種奈米後管場發射電子源，其包括： 一導電基體，該導電基體具有一頂部；及 一奈米碳管，該奈米碳管一端與該導電基體頂部電性 建接，另一端沿該導電基體頂部方向向外延伸； 其改進在於，該奈米碳管場發射電子源進一步包括一 ^面修飾層，該表面修飾層均勻分佈並浸潤於該奈米碳 二之表面，並至少覆蓋該奈米碳管向外延伸之一端，該 2 飾層之逸出功低於奈米碳管之逸出功。 .复:請專利範圍第1項所述之奈米碳管場發射電子源， ^。，該表面修飾層覆蓋整個奈米碳管與導電基體之表 • 申請專利範圍第1項所述之奈米碳管場發射電子源， 4 該表面修飾層材料爲碳化鍅或碳化鈦。 清專利範圍第3項所述之奈米碳管場發射電子源， 該碳化結之逸出功爲3. 32電子伏特，該破化鈦之 5逸出功爲3.82電子伏特。 範财1項所述之奈米碳管場發射電子源， 6 : L該表面修飾層之厚度爲1〜奈米。 其軌圍第5項所述之奈米碳管場發射電子源， 7 1 a，該表面修飾層之厚度爲5奈米。 .申請|纖_ i項所述之奈米碳管場發射電子源， 8/如由電基體之頂部爲錐形、圓臺形或柱形。 其中&導1^7項所狀奈米碳管場發射電子源， 其中，今二1項所述之奈米碳管場發射電子源’ 10奈未反管爲多壁奈米碳管。 ^ 源，其第9項職之奈米碳管場發射電子 Uo奈米Γ不米碳管之長度爲10〜100微米，直徑爲 16 1309428 ψ * 11.如申請專利範圍第10項所述之奈米碳管場發射電子 源，其中，該奈米碳管之長度爲50微米，直徑爲15 奈米。 12.如申請專利範圍第1項所述之奈米碳管場發射電子 源，其中，該奈米碳管場發射電子源之場發射電流為100 微安培，場發射電流密度為5. 7xl07A/cm2。: 1309428 , the patent application scope of the nano-tube field emission electron source, comprising: a conductive substrate, the conductive substrate has a top; and a carbon nanotube, one end of the carbon nanotube and the top of the conductive substrate Constructed, the other end extending outward along the top direction of the conductive substrate; the improvement is that the carbon nanotube field emission electron source further comprises a surface modification layer, the surface modification layer is uniformly distributed and infiltrated into the nano carbon two The surface, and covering at least one end of the carbon nanotube extending outward, the work function of the 2 decorative layer is lower than the work function of the carbon nanotube. Fu: Please use the carbon nanotube field emission electron source described in item 1 of the patent scope, ^. The surface modification layer covers the entire surface of the carbon nanotube and the conductive substrate. • The carbon nanotube field emission electron source described in claim 1 is 4, and the surface modification layer material is tantalum carbide or titanium carbide. In the carbon nanotube field emission electron source described in Item 3 of the patent scope, the work function of the carbonization junction is 3.32 eV, and the work function of the broken titanium is 3.82 eV. The nano carbon tube field emission electron source described in Fan Cai, 6: L The thickness of the surface modification layer is 1 to nanometer. The carbon nanotube field emission electron source described in item 5 of the track, 7 1 a, has a surface modification layer thickness of 5 nm. Applying the carbon nanotube field emission electron source described in item _i, 8/, if the top of the electric substrate is tapered, truncated or cylindrical. Among them, the electron source of the carbon nanotube field emitted by the <1,7 item, wherein the nanocarbon field emission electron source described in the first item is not multi-walled carbon nanotube. ^ Source, its 9th position, the carbon nanotube field emission electron Uo nanometer, the length of the carbon tube is 10~100 microns, and the diameter is 16 1309428 ψ * 11. As described in claim 10 The carbon nanotube field emits an electron source, wherein the carbon nanotube has a length of 50 microns and a diameter of 15 nm. The field emission current density is 5. 7xl07A/, the field emission current of the field of the carbon nanotube field emission electron source is 100 microamperes, and the field emission current density is 5. 7xl07A/ Cm2. 1717