TWI427663B - Field emission pixel tube - Google Patents

Description

場發射像素管 Field emission pixel tube

本發明涉及一種場發射像素管，尤其為一種應用奈米碳管作為場發射體之場發射像素管。 The invention relates to a field emission pixel tube, in particular to a field emission pixel tube using a carbon nanotube as a field emitter.

奈米碳管(Carbon Nanotube,CNT)為一種新型碳材料，由日本研究人員Iijima在1991年發現，請參見"Helical Microtubules of Graphitic Carbon",S.Iijima,Nature,vol.354,p56(1991)。奈米碳管具有極大之長徑比(其長度在微米量級以上，直徑只有複數奈米或幾十個奈米)，具有良好之導電導熱性能，並且還有很好之機械強度及良好之化學穩定性，這些特性使得奈米碳管成為一種優良之場發射材料。因此，奈米碳管在場發射裝置中之應用成為目前奈米科技領域之一研究熱點。 Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher Iijima in 1991. See "Helical Microtubules of Graphitic Carbon", S.Iijima, Nature, vol. 354, p56 (1991) . The carbon nanotubes have a very large aspect ratio (the length of which is above the order of micrometers and the diameter is only a few nanometers or tens of nanometers), have good electrical and thermal conductivity, and have good mechanical strength and good Chemical stability, these properties make the carbon nanotubes an excellent field emission material. Therefore, the application of nano carbon tubes in field emission devices has become one of the research hotspots in the field of nanotechnology.

然而，先前場發射像素管為將奈米碳管線作為電子發射體，而電子發射體中之奈米碳管聚集在一起，在工作過程中散熱不良，並且相鄰之奈米碳管之間存在電場屏蔽效應，因此電子發射體之電子發射能力不夠好。 However, the previous field emission pixel tube is a nano carbon line as an electron emitter, and the carbon nanotubes in the electron emitter are gathered together, which has poor heat dissipation during operation and exists between adjacent carbon nanotubes. The electric field shielding effect, so the electron emission capability of the electron emitter is not good enough.

有鑒於此，提供一種電子發射能力較強之場發射像素管實為必要。 In view of this, it is necessary to provide a field emission pixel tube with strong electron emission capability.

一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體，其中，所述至少一電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構之一端與所述陰極支撐體電連接，所述奈米碳管管狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，所述奈米碳管管狀結構為複數奈米碳管圍繞一中空之線狀軸心行成，所述奈米碳管管狀結構在電子發射端延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter, wherein the at least one electron emitter comprises a carbon nanotube tubular structure, and the carbon nanotube is tubular One end of the structure is electrically connected to the cathode support, and the other end of the tubular structure of the carbon nanotube extends toward the anode as an electron emission end of an electron emitter, and the tubular structure of the carbon nanotube is a plurality of nano carbon The tube is formed around a hollow linear axis extending from the electron emitting tip at the electron emitting end.

一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體，其中，所述至少一電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構之一端與所述陰極支撐體電連接，所述奈米碳管管狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，在所述電子發射端，所述奈米碳管管狀結構具有一開口，所述奈米碳管管狀結構從開口處延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter, wherein the at least one electron emitter comprises a carbon nanotube tubular structure, and the carbon nanotube is tubular One end of the structure is electrically connected to the cathode support, and the other end of the tubular structure of the carbon nanotube extends toward the anode as an electron emission end of an electron emitter, and at the electron emission end, the carbon nanotube The tubular structure has an opening from which the plurality of electron-emitting tips extend from the opening.

一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體，其中，所述至少一電子發射體包括一線狀支撐體及一奈米碳管管狀結構設置於所述線狀支撐體表面 組成一奈米碳管複合線狀結構，所述奈米碳管複合線狀結構之一端與所述陰極支撐體電連接，所述奈米碳管複合線狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，所述奈米碳管管狀結構具有一開口，所述奈米碳管管狀結構從開口處延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter, wherein the at least one electron emitter comprises a linear support and a carbon nanotube tubular structure disposed at the cathode Linear support surface Forming a carbon nanotube composite linear structure, one end of the carbon nanotube composite linear structure is electrically connected to the cathode support, and the other end of the carbon nanotube composite linear structure extends toward the anode As the electron-emitting end of the electron emitter, the nanotube structure has an opening, and the nanotube structure extends from the opening to the plurality of electron-emitting tips.

相較於先前技術，本發明所述場發射像素管之電子發射體為奈米碳管管狀結構，可提高電子發射體之機械強度及電子發射體之散熱能力，並且所述奈米碳管管狀結構進一步包括複數呈環狀排列之電子發射尖端，可有效減小相鄰電子發射尖端之間之屏蔽效應，提高電子發射體之電子發射能力，從而提高電子發射體之發射電流密度。 Compared with the prior art, the electron emitter of the field emission pixel tube of the present invention is a tubular structure of a carbon nanotube, which can improve the mechanical strength of the electron emitter and the heat dissipation capability of the electron emitter, and the nanotube is tubular. The structure further includes a plurality of electron-emitting tips arranged in a ring shape, which can effectively reduce the shielding effect between adjacent electron-emitting tips, improve the electron-emitting capability of the electron-emitting body, and thereby increase the emission current density of the electron-emitting body.

100,200,300,400‧‧‧場發射像素管 100,200,300,400‧‧‧ field emission pixel tube

101‧‧‧電子發射尖端 101‧‧‧Electronic emission tip

102,202,302,402‧‧‧殼體 102,202,302,402‧‧‧ housing

103‧‧‧第一端 103‧‧‧ first end

104,204,304,404‧‧‧陰極 104,204,304,404‧‧‧ cathode

105‧‧‧第二端 105‧‧‧second end

106,206,306,406‧‧‧陰極支撐體 106,206,306,406‧‧‧Cathodic support

107‧‧‧開口 107‧‧‧ openings

108,208,308‧‧‧電子發射體 108,208,308‧‧‧Electronic emitters

110,210,310,410‧‧‧螢光粉層 110,210,310,410‧‧‧Fluorescent powder layer

112,212,312‧‧‧陽極 112,212,312‧‧‧Anode

113‧‧‧閘極體 113‧‧‧gate body

114,214,314,414‧‧‧陽極引線 114,214,314,414‧‧‧Anode lead

115‧‧‧出射口 115‧‧‧Outlet

116,216,316,416‧‧‧陰極引線 116,216,316,416‧‧‧Cathode lead

117‧‧‧柵極電極 117‧‧‧ gate electrode

118,218,318,418‧‧‧吸氣劑 118,218,318,418‧‧‧ getter

122,222,322,422‧‧‧電子發射端 122,222,322,422‧‧‧Electronic transmitter

124‧‧‧出光部 124‧‧‧Lighting Department

126‧‧‧電子發射部 126‧‧‧Electronic Launch Department

128‧‧‧線狀支撐體 128‧‧‧Linear support

203,303,403‧‧‧場發射單元 203,303,403‧‧‧ field launching unit

220,320,420‧‧‧端面 220,320,420‧‧‧ end face

407‧‧‧第一電子發射體 407‧‧‧First electron emitter

408‧‧‧第二電子發射體 408‧‧‧Second electron emitter

409‧‧‧第三電子發射體 409‧‧‧ Third electron emitter

411‧‧‧第一陽極 411‧‧‧First anode

412‧‧‧第二陽極 412‧‧‧second anode

413‧‧‧第三陽極 413‧‧‧ Third anode

圖1為本發明第一實施例提供之場發射像素管之結構示意圖。 FIG. 1 is a schematic structural diagram of a field emission pixel tube according to a first embodiment of the present invention.

圖2為本發明第一實施例提供之場發射像素管中電子發射體之結構示意圖。 2 is a schematic structural view of an electron emitter in a field emission pixel tube according to a first embodiment of the present invention.

圖3為本發明第一實施例提供之場發射像素管中電子發射體之剖面示意圖。 3 is a cross-sectional view showing an electron emitter in a field emission pixel tube according to a first embodiment of the present invention.

圖4為本發明第一實施例提供之場發射像素管中電子發射體之掃描電鏡照片。 4 is a scanning electron micrograph of an electron emitter in a field emission pixel tube according to a first embodiment of the present invention.

圖5為本發明第一實施例提供之場發射像素管中電子發射體開口之掃描電鏡照片。 FIG. 5 is a scanning electron micrograph of an electron emitter opening in a field emission pixel tube according to a first embodiment of the present invention.

圖6為本發明第一實施例提供之場發射像素管中電子發射體之複 數電子發射尖端之掃描電鏡照片。 FIG. 6 is a diagram of an electron emitter in a field emission pixel tube according to a first embodiment of the present invention; Scanning electron micrograph of the number of electron emission tips.

圖7為本發明第一實施例提供之場發射像素管中電子發射尖端之透射電鏡照片。 FIG. 7 is a transmission electron micrograph of an electron emission tip in a field emission pixel tube according to a first embodiment of the present invention.

圖8為本發明第一實施例提供之場發射像素管中電子發射體及其線狀支撐體之剖面示意圖。 FIG. 8 is a cross-sectional view showing an electron emitter and a linear support body thereof in a field emission pixel tube according to a first embodiment of the present invention.

圖9為本發明第一實施例提供之場發射像素管中奈米碳管管狀結構之掃描電鏡照片。 FIG. 9 is a scanning electron micrograph of a tubular structure of a carbon nanotube in a field emission pixel tube according to a first embodiment of the present invention.

圖10為本發明第一實施例提供之具有閘極體之場發射像素管之結構示意圖。 FIG. 10 is a schematic structural diagram of a field emission pixel tube having a gate body according to a first embodiment of the present invention.

圖11為本發明第二實施例提供之場發射像素管之結構示意圖。 FIG. 11 is a schematic structural diagram of a field emission pixel tube according to a second embodiment of the present invention.

圖12至圖15為本發明第二實施例提供之場發射像素管中電子發射體與陽極之位置關係示意圖。 12 to FIG. 15 are schematic diagrams showing the positional relationship between an electron emitter and an anode in a field emission pixel tube according to a second embodiment of the present invention.

圖16為本發明第三實施例提供之場發射像素管之結構示意圖。 FIG. 16 is a schematic structural diagram of a field emission pixel tube according to a third embodiment of the present invention.

圖17為本發明第四實施例提供之場發射像素管之結構示意圖。 FIG. 17 is a schematic structural diagram of a field emission pixel tube according to a fourth embodiment of the present invention.

圖18為本發明第四實施例提供之場發射像素管之俯視示意圖。 FIG. 18 is a schematic top plan view of a field emission pixel tube according to a fourth embodiment of the present invention.

以下將結合附圖對本發明作進一步詳細說明。 The invention will be further described in detail below with reference to the accompanying drawings.

請參閱圖1，本發明第一實施例提供一種場發射像素管100，該場發射像素管100包括一殼體102及一場發射單元(圖未標示)，所述場發射單元位於所述殼體102內，所述殼體102為所述場發射單 元提供一真空空間。 Referring to FIG. 1 , a first embodiment of the present invention provides a field emission pixel tube 100. The field emission pixel tube 100 includes a housing 102 and a field emission unit (not shown). The field emission unit is located in the housing. 102, the housing 102 is the field emission list Yuan provides a vacuum space.

所述場發射單元包括一陰極104，一螢光粉層110，一陽極112及一陰極引線116及一陽極引線114。所述陰極104與陽極112相對且間隔設置，所述陰極引線116與陰極104電連接，所述陽極引線114與所述陽極112電連接，所述陰極104可發射電子，其發射之電子在所述陰極104與陽極112之間產生之電場作用下到達螢光粉層110，轟擊螢光粉層110中之螢光物質而使之發光。 The field emission unit includes a cathode 104, a phosphor layer 110, an anode 112 and a cathode lead 116 and an anode lead 114. The cathode 104 is opposite and spaced apart from the anode 112. The cathode lead 116 is electrically connected to the cathode 104. The anode lead 114 is electrically connected to the anode 112. The cathode 104 can emit electrons, and the emitted electrons are in the The electric field generated between the cathode 104 and the anode 112 reaches the phosphor layer 110, and bombards the phosphor in the phosphor layer 110 to emit light.

該殼體102為真空密封之中空結構。在本實施例中，該殼體102為中空圓柱體，且該殼體102之材料為石英石或玻璃。可理解，該殼體102還可為中空之立方體、三棱柱或其他多邊形棱柱。所述殼體102具有相對之兩端面(未標示)，其中一端面具有一出光部124，所述出光部124可為平面也可為球面或非球面，本領域技術人員可根據實際情況進行選擇。可理解，所述出光部124也可設置於殼體102之整個表面。所述陽極112設置於該殼體102設置有出光部124之內壁上，該陽極112為氧化銦錫薄膜或鋁膜，具有良好的透光性及導電性。所述陽極112通過所述陽極引線114電連接於殼體102外部。 The housing 102 is a vacuum sealed hollow structure. In this embodiment, the housing 102 is a hollow cylinder, and the material of the housing 102 is quartz stone or glass. It will be appreciated that the housing 102 can also be a hollow cube, a triangular prism or other polygonal prism. The housing 102 has opposite end faces (not shown), and one end of the mask has a light exiting portion 124. The light exiting portion 124 can be a flat surface or a spherical surface or an aspherical surface, and can be selected according to actual conditions by those skilled in the art. . It can be understood that the light exit portion 124 can also be disposed on the entire surface of the housing 102. The anode 112 is disposed on the inner wall of the housing 102 on which the light-emitting portion 124 is provided. The anode 112 is an indium tin oxide film or an aluminum film, and has good light transmittance and electrical conductivity. The anode 112 is electrically connected to the outside of the housing 102 through the anode lead 114.

所述螢光粉層110設置於陽極112靠近陰極104之表面，該螢光粉層110可為白色螢光粉，也可為彩色螢光粉，例如紅色、綠色、藍色螢光粉等，當電子轟擊螢光粉層110時可發出白色或彩色可見光。 The phosphor layer 110 is disposed on the surface of the anode 112 near the cathode 104. The phosphor layer 110 may be a white phosphor or a color phosphor, such as red, green, blue phosphor, or the like. White or colored visible light can be emitted when electrons bombard the phosphor layer 110.

所述陰極104設置於所述殼體102內部與出光部124相對之一端且 垂直於所述出光部124。所述陰極104包括一陰極支撐體106及一電子發射體108。所述電子發射體108一端與所述陰極支撐體106電連接，另一端向所述陽極112延伸作為電子發射端122，用於發射電子，所述電子發射體108可通過導電膠等黏結劑固定於所述陰極支撐體106靠近螢光粉層110之一端。所述陰極支撐體106遠離螢光粉層110之一端可通過所述陰極引線116電連接於所述殼體102外部。所述陰極支撐體106為一能夠導電、導熱並具有一定強度之金屬絲或其他導電結構，在本實施例中該陰極支撐體106為銅絲。 The cathode 104 is disposed at one end of the housing 102 opposite to the light exit portion 124 and It is perpendicular to the light exit portion 124. The cathode 104 includes a cathode support 106 and an electron emitter 108. One end of the electron emitter 108 is electrically connected to the cathode support 106, and the other end extends toward the anode 112 as an electron emission end 122 for emitting electrons. The electron emitter 108 can be fixed by a bonding agent such as a conductive adhesive. The cathode support 106 is adjacent to one end of the phosphor layer 110. One end of the cathode support 106 away from the phosphor layer 110 may be electrically connected to the outside of the casing 102 through the cathode lead 116. The cathode support body 106 is a wire or other conductive structure capable of conducting, conducting heat and having a certain strength. In the embodiment, the cathode support body 106 is a copper wire.

請參閱圖2至圖4，所述電子發射體108包括一由複數奈米碳管圍成之奈米碳管管狀結構，所述奈米碳管管狀結構具有一中空之線狀軸心。所述奈米碳管管狀結構中複數奈米碳管通過凡得瓦力(van der Waals force)相互連接成一體結構。所述奈米碳管管狀結構中大多數奈米碳管圍繞該中空之線狀軸心螺旋延伸，可理解，所述奈米碳管管狀結構中也存在極少數並非圍繞線狀軸心螺旋而為隨機排列之奈米碳管，該少數隨機排列之奈米碳管的延伸方向沒有規則。然，該少數隨機排列之奈米碳管並不影響所述奈米碳管管狀結構之排列方式及奈米碳管之延伸方向。在此，將線狀軸心之長度方向定義為複數奈米碳管之延伸方向，將複數奈米碳管圍繞所述線狀軸心螺旋形成之方向定義為螺旋方向。在螺旋方向上相鄰之奈米碳管通過凡得瓦力首尾相連，在延伸方向上相鄰之奈米碳管通過凡得瓦力緊密結合。所述奈米碳管管狀結構中大多數奈米碳管之螺旋方向與所述線狀軸心之長度方向形成一定 之交叉角α，且0°<α≦90°。 Referring to FIG. 2 to FIG. 4, the electron emitter 108 includes a tubular structure of a carbon nanotube surrounded by a plurality of carbon nanotube tubes having a hollow linear axis. The plurality of carbon nanotubes in the tubular structure of the carbon nanotubes are connected to each other by a van der Waals force to form an integral structure. Most of the carbon nanotubes in the tubular structure of the carbon nanotubes extend spirally around the hollow axis of the hollow. It is understood that there are also very few spirals in the tubular structure of the carbon nanotubes that do not surround the linear axis. For randomly arranged carbon nanotubes, the direction of extension of the minority of randomly arranged carbon nanotubes is not regular. However, the minority of randomly arranged carbon nanotubes does not affect the arrangement of the tubular structure of the carbon nanotubes and the direction in which the carbon nanotubes extend. Here, the longitudinal direction of the linear axis is defined as the extending direction of the plurality of carbon nanotubes, and the direction in which the plurality of carbon nanotubes are spirally formed around the linear axis is defined as the spiral direction. The carbon nanotubes adjacent in the spiral direction are connected end to end by van der Waals force, and the adjacent carbon nanotubes in the extending direction are tightly coupled by van der Waals force. The spiral direction of most of the carbon nanotubes in the tubular structure of the carbon nanotube forms a certain length with the longitudinal direction of the linear axis The crossing angle α is 0° < α ≦ 90°.

所述線狀軸心為空的，為虛擬的。該奈米碳管管狀結構中線狀軸心之截面形狀可為方形、梯形、圓形或橢圓形等形狀，該線狀軸心之截面大小，可根據實際要求製備。 The linear axis is empty and virtual. The cross-sectional shape of the linear axis in the tubular structure of the carbon nanotube can be square, trapezoidal, circular or elliptical, and the cross-sectional size of the linear axis can be prepared according to actual requirements.

請一併參閱圖5至圖7，所述奈米碳管管狀結構之一端具有複數電子發射尖端101，所述複數電子發射尖端101圍繞所述線狀軸心呈環形排列。具體地，所述奈米碳管管狀結構在沿線狀軸心之方向上包括一第一端103及與該第一端103相對之一第二端105。所述奈米碳管管狀結構之第一端103與所述陰極支撐體106電連接。所述第二端105作為所述電子發射體108之電子發射端122，在電子發射端122，所述奈米碳管管狀結構之整體直徑沿遠離第一端103之方向逐漸減小，並收縮形成一類圓錐形的縮口，形成一電子發射部126，即所述奈米碳管管狀結構在電子發射端122具有一類圓錐形之電子發射部126。所述奈米碳管管狀結構之電子發射部126之末端具有一開口107，及複數突出之奈米碳管束。所述每一奈米碳管束為所述奈米碳管管狀結構從開口107延伸出來且由複數奈米碳管組成的束狀結構。該複數奈米碳管束圍繞所述線狀軸心排列成環形，且向陽極112延伸作為複數電子發射尖端101。該複數電子發射尖端101之延伸方向基本一致，即該複數電子發射尖端101基本沿所述線狀軸心之長度方向向遠處延伸，所述遠處為指遠離所述陰極支撐體106之方向。進一步的，該複數電子發射尖端101圍繞所述線狀軸心呈發散狀排列，即該複數電子發射尖端101之延伸方向逐漸遠離所述線狀軸心。當該複數奈米碳管束 呈發散狀排列時，所述電子發射部126之徑向尺寸雖然整體上為沿遠離奈米碳管管狀結構之第一端103方向逐漸減小，但由於複數電子發射尖端101呈發散性之排列，進而電子發射部126末端向外略微擴張，從而所述複數電子發射尖端101之間的距離沿延伸方向逐漸變大，使圍繞開口107環形排列之複數電子發射尖端101相互間的間距變大，進而進一步降低了電子發射尖端101之間的屏蔽效應。所述開口107之尺寸範圍為4-6微米，本實施例中，所述開口107為圓形，其直徑為5微米，因此位於開口107之相對二端的電子發射尖端101的間距大於等於5微米。 Referring to FIG. 5 to FIG. 7 together, one end of the tubular structure of the carbon nanotube has a plurality of electron emission tips 101, and the plurality of electron emission tips 101 are arranged in a ring shape around the linear axis. Specifically, the carbon nanotube tubular structure includes a first end 103 and a second end 105 opposite the first end 103 in a direction along the linear axis. The first end 103 of the carbon nanotube tubular structure is electrically connected to the cathode support 106. The second end 105 serves as an electron emitting end 122 of the electron emitter 108. At the electron emitting end 122, the overall diameter of the tubular structure of the carbon nanotube is gradually reduced and contracted away from the first end 103. A conical shaped constriction is formed to form an electron emissive portion 126, i.e., the carbon nanotube tubular structure has a conical electron emitting portion 126 at the electron emitting end 122. The end of the electron-emitting portion 126 of the tubular structure of the carbon nanotube has an opening 107 and a plurality of protruding carbon nanotube bundles. Each of the carbon nanotube bundles is a bundle structure in which the nanotube structure is extended from the opening 107 and composed of a plurality of carbon nanotubes. The plurality of carbon nanotube bundles are arranged in a ring shape around the linear axis and extend toward the anode 112 as a plurality of electron emission tips 101. The extension direction of the plurality of electron-emitting tips 101 is substantially uniform, that is, the plurality of electron-emitting tips 101 extend substantially distally along the length direction of the linear axis, and the far-end refers to a direction away from the cathode support 106. . Further, the plurality of electron emission tips 101 are arranged in a divergent manner around the linear axis, that is, the extension direction of the plurality of electron emission tips 101 gradually moves away from the linear axis. When the plurality of carbon nanotube bundles When arranged in a divergent arrangement, the radial dimension of the electron-emitting portion 126 is gradually reduced in the direction away from the first end 103 of the tubular structure of the carbon nanotubes, but the plurality of electron-emitting tips 101 are arranged in a divergent manner. Further, the end of the electron-emitting portion 126 is slightly expanded outward, so that the distance between the plurality of electron-emitting tips 101 gradually becomes larger in the extending direction, so that the distance between the plurality of electron-emitting tips 101 arranged annularly around the opening 107 becomes larger. The shielding effect between the electron emission tips 101 is further reduced. The opening 107 has a size ranging from 4 to 6 micrometers. In the embodiment, the opening 107 is circular and has a diameter of 5 micrometers. Therefore, the distance between the electron-emitting tips 101 at opposite ends of the opening 107 is greater than or equal to 5 micrometers. .

請參閱圖7，每一電子發射尖端101包括複數基本平行排列之奈米碳管，並且每一電子發射尖端101之頂端突出有一根奈米碳管，即所述複數平行排列之奈米碳管中突出一根奈米碳管，優選的，所述每一電子發射尖端101之中心位置突出有一根奈米碳管，該奈米碳管之直徑小於5奈米。本實施例中突出的奈米碳管之直徑為4奈米。相鄰的電子發射尖端101中突出的奈米碳管之間的距離為0.1微米至2微米。相鄰的電子發射尖端101中突出的奈米碳管之間的距離與突出的奈米碳管直徑之比例的範圍為20：1-500：1。可理解，由於電子發射尖端101之頂端突出有一根奈米碳管，且相鄰的電子發射尖端101中突出奈米碳管之間的距離與突出的奈米碳管之直徑的比值大於20：1，故相鄰之電子發射尖端101中突出的奈米碳管之間的間距遠大於突出的奈米碳管之直徑，從而可有效降低相鄰之突出奈米碳管之間的屏蔽效應。進一步地，由於所述複數電子發射尖端101呈環形排列於奈米碳管管狀結構之一 端，且相鄰電子發射尖端101中突出的奈米碳管之間的距離的最小值為0.1微米，則所述複數電子發射尖端101中任意兩突出的奈米碳管之間的距離均大於0.1微米。如此可進一步降低該電子發射體之電場屏蔽效應，獲得具有較大密度之場發射電流。 Referring to FIG. 7, each electron emission tip 101 includes a plurality of substantially parallel arranged carbon nanotubes, and a tip of each electron emission tip 101 protrudes from a carbon nanotube, that is, the plurality of parallel arranged carbon nanotubes. A carbon nanotube is protruded from the center. Preferably, a central carbon nanotube protrudes from a center of the electron-emitting tip 101, and the diameter of the carbon nanotube is less than 5 nm. The diameter of the protruding carbon nanotubes in this embodiment is 4 nm. The distance between the protruding carbon nanotubes in the adjacent electron-emitting tips 101 is from 0.1 micrometers to 2 micrometers. The ratio of the distance between the protruding carbon nanotubes in the adjacent electron-emitting tips 101 to the diameter of the protruding carbon nanotubes ranges from 20:1 to 500:1. It can be understood that since the top end of the electron emission tip 101 protrudes with a carbon nanotube, and the ratio between the distance between the protruding carbon nanotubes in the adjacent electron emission tip 101 and the diameter of the protruding carbon nanotube is greater than 20: 1. Therefore, the spacing between the protruding carbon nanotubes in the adjacent electron emission tip 101 is much larger than the diameter of the protruding carbon nanotubes, so that the shielding effect between adjacent protruding carbon nanotubes can be effectively reduced. Further, since the plurality of electron emission tips 101 are arranged in a ring shape in one of the tubular structures of the carbon nanotubes And the minimum distance between the protruding carbon nanotubes in the adjacent electron emission tip 101 is 0.1 micrometer, and the distance between any two protruding carbon nanotubes in the plurality of electron emission tips 101 is greater than 0.1 micron. In this way, the electric field shielding effect of the electron emitter can be further reduced, and a field emission current having a large density can be obtained.

另外，所述陰極104可進一步包括複數電子發射體108與一陰極支撐體106電連接，所述複數電子發射體108相互間隔設置，所述複數電子發射體108之一端均與陰極支撐體106電連接，所述複數電子發射體108之另一端分別向陽極112之方向延伸。 In addition, the cathode 104 may further include a plurality of electron emitters 108 electrically connected to a cathode support body 106, the plurality of electron emitters 108 being spaced apart from each other, and one end of the plurality of electron emitters 108 being electrically connected to the cathode support body 106. Connected, the other ends of the plurality of electron emitters 108 extend toward the anode 112, respectively.

所述奈米碳管管狀結構為由至少一奈米碳管膜或至少一奈米碳管線圍繞該線狀軸心之軸向緊密環繞而形成。可理解，該奈米碳管管狀結構之管壁具有一定厚度，所述厚度可通過控制所述奈米碳管膜或奈米碳管線之層數確定。該奈米碳管管狀結構內徑及外徑之大小可根據實際需求製備，所述奈米碳管管狀結構之內徑可為10微米~30微米，外徑可為15微米~60微米，本實施例中，該奈米碳管管狀結構之內徑約為18微米，最大外徑即奈米碳管管狀結構之最大直徑約為50微米。 The carbon nanotube tubular structure is formed by tightly surrounding an axial direction of the linear axis by at least one carbon nanotube film or at least one nano carbon line. It can be understood that the wall of the tubular structure of the carbon nanotube has a certain thickness, which can be determined by controlling the number of layers of the carbon nanotube film or the carbon nanotube. The inner diameter and the outer diameter of the tubular structure of the carbon nanotube can be prepared according to actual needs, and the inner diameter of the tubular structure of the carbon nanotube can be 10 micrometers to 30 micrometers, and the outer diameter can be 15 micrometers to 60 micrometers. In an embodiment, the inner diameter of the tubular structure of the carbon nanotubes is about 18 microns, and the largest outer diameter, that is, the tubular structure of the carbon nanotubes, has a maximum diameter of about 50 microns.

請參考圖8，所述電子發射體108可進一步包括一線狀支撐體128設置於所述奈米碳管管狀結構之中空的線狀軸心處。所述奈米碳管管狀結構通過所述線狀支撐體128支撐並與所述陰極支撐體電連接。所述奈米碳管管狀結構即為設置於所述線狀支撐體128之表面的一奈米碳管層，即所述奈米碳管層套設於所述線狀支撐體128之表面，所述奈米碳管層與所述線狀支撐體128組成一奈米碳管複合線狀結構。所述奈米碳管複合線狀結構中之奈米碳管層與 上述奈米碳管管狀結構整體上基本一致，即所述奈米碳管層與上述奈米碳管管狀結構之結構相同，奈米碳管層中奈米碳管之排列及延伸方式與上述奈米碳管管狀結構中之奈米碳管之排列及延伸方式相同。所述線狀支撐體128可為導電體或非導電體，其直徑可為10微米~30微米，所述線狀支撐體128可進一步提高所述電子發射體108之機械強度。所述奈米碳管複合線狀結構之一端與所述陰極支撐體106電連接，所述奈米碳管複合線狀結構之另一端向所述陽極112延伸作為電子發射體108之電子發射端，所述奈米碳管複合線狀結構中之所述奈米碳管層在電子發射端延伸出複數電子發射尖端101。所述奈米碳管複合線狀結構向陽極112延伸之一端具有一與上述實施例中之電子發射端122相同的結構。所述奈米碳管複合線狀結構可通過導電膠固定於所述陰極支撐體106靠近螢光粉層110之一端，也可通過焊接之方式將所述複合線狀結構與所述陰極支撐體106電連接。所述電子發射端中線狀支撐體128之延伸長度小於所述奈米碳管層在所述線狀支撐體128延伸方向上之延伸長度。 Referring to FIG. 8, the electron emitter 108 may further include a linear support body 128 disposed at a hollow linear axis of the tubular structure of the carbon nanotube. The carbon nanotube tubular structure is supported by the linear support 128 and electrically connected to the cathode support. The tubular structure of the carbon nanotubes is a carbon nanotube layer disposed on the surface of the linear support body 128, that is, the carbon nanotube layer is sleeved on the surface of the linear support body 128. The carbon nanotube layer and the linear support body 128 form a carbon nanotube composite linear structure. The carbon nanotube layer in the carbon nanotube composite linear structure The tubular structure of the above-mentioned carbon nanotubes is basically the same as a whole, that is, the structure of the carbon nanotube layer is the same as that of the tubular structure of the above-mentioned carbon nanotubes, and the arrangement and extension manner of the carbon nanotubes in the carbon nanotube layer and the above-mentioned nai The arrangement and extension of the carbon nanotubes in the tubular structure of the carbon nanotubes are the same. The linear support body 128 can be an electrical conductor or a non-conductor, and the diameter can be 10 micrometers to 30 micrometers. The linear support body 128 can further improve the mechanical strength of the electron emitter 108. One end of the carbon nanotube composite linear structure is electrically connected to the cathode support 106, and the other end of the carbon nanotube composite linear structure extends toward the anode 112 as an electron emission end of the electron emitter 108. The carbon nanotube layer in the carbon nanotube composite linear structure extends a plurality of electron emission tips 101 at an electron emission end. One end of the carbon nanotube composite linear structure extending toward the anode 112 has the same structure as the electron emission end 122 in the above embodiment. The carbon nanotube composite linear structure may be fixed to one end of the cathode support 106 near the phosphor powder layer 110 by a conductive adhesive, or the composite linear structure and the cathode support may be welded. 106 electrical connection. The extension length of the linear support body 128 in the electron emission end is smaller than the extension length of the carbon nanotube layer in the extending direction of the linear support body 128.

所述奈米碳管電子發射體108之製備方法，包括以下步驟：(S10)提供一線狀支撐體；(S20)提供至少一奈米碳管膜或奈米碳管線，將所述奈米碳管膜或奈米碳管線纏繞在所述線狀支撐體表面形成一奈米碳管層；(S30)移除所述線狀支撐體，得到一由奈米碳管層圍成之中空之管狀奈米碳管預製體；及 (S40)將該管狀奈米碳管預製體熔斷，形成所述奈米碳管電子發射體108。 The method for preparing the carbon nanotube electron emitter 108 comprises the steps of: (S10) providing a linear support; (S20) providing at least one carbon nanotube film or a nano carbon line, the nano carbon a tubular film or a nanocarbon line is wound around the surface of the linear support to form a carbon nanotube layer; (S30) removing the linear support to obtain a hollow tubular naphthalene surrounded by a carbon nanotube layer Carbon tube preform; and (S40) The tubular carbon nanotube preform is melted to form the carbon nanotube electron emitter 108.

步驟(S10)中，該線狀支撐體在一控制裝置之控制下既能夠繞其中心軸旋轉又能夠沿其中心軸延伸方向做直線運動。 In the step (S10), the linear support body is both rotatable about its central axis and linearly movable along the direction of its central axis under the control of the control device.

所述線狀支撐體之材料可為單質金屬金屬、金屬合金、高分子材料等。所述單質金屬包括金、銀、銅、鋁等，所述金屬合金包括銅錫合金。進一步的，所述銅錫合金表面可鍍銀。所述銅錫合金可為97%銅與3%錫之合金。 The material of the linear support may be an elemental metal metal, a metal alloy, a polymer material or the like. The elemental metal includes gold, silver, copper, aluminum, etc., and the metal alloy includes a copper-tin alloy. Further, the surface of the copper-tin alloy may be plated with silver. The copper-tin alloy may be an alloy of 97% copper and 3% tin.

所述線狀支撐體在纏繞奈米碳管線膜或奈米碳管線之過程中，主要起支撐作用，其本身具有一定穩定性及機械強度，且可通過化學方法、物理方法或機械方法移除。該線狀支撐體之材料可選用符合上述條件之所有材料。可理解，該線狀支撐體可選用不同之直徑。本實施例中選用直徑為25微米之鋁線作為該線狀支撐體。 The linear support body mainly plays a supporting role in the process of winding the nano carbon pipeline film or the nano carbon pipeline, and has a certain stability and mechanical strength, and can be removed by chemical, physical or mechanical methods. . The material of the linear support may be selected from all materials meeting the above conditions. It can be understood that the linear support body can be selected with different diameters. In this embodiment, an aluminum wire having a diameter of 25 μm is selected as the linear support.

步驟(S20)中，所述奈米碳管膜或奈米碳管為自支撐結構。所述奈米碳管膜可為奈米碳管拉膜或奈米碳管碾壓膜等。所述奈米碳管膜由複數奈米碳管組成，該複數奈米碳管無序或有序排列。所謂無序排列為指奈米碳管之排列方向無規則。所謂有序排列為指奈米碳管之排列方向有規則。具體地，當奈米碳管膜包括無序排列之奈米碳管時，奈米碳管相互纏繞或者各向同性排列；當奈米碳管膜包括有序排列之奈米碳管時，奈米碳管沿一方向或者複數方向擇優取向排列。所謂“擇優取向”為指所述奈米碳管膜中之大多數奈米碳管在一方向或複數方向上具有較大之取向幾率； 即，該奈米碳管膜中之大多數奈米碳管的軸向基本沿同一方向或複數方向延伸。 In the step (S20), the carbon nanotube film or the carbon nanotube is a self-supporting structure. The carbon nanotube film may be a carbon nanotube film or a carbon nanotube film or the like. The carbon nanotube membrane is composed of a plurality of carbon nanotubes, and the plurality of carbon nanotubes are disorderly or orderedly arranged. The so-called disordered arrangement means that the arrangement direction of the carbon nanotubes is irregular. The so-called ordered arrangement means that the arrangement direction of the carbon nanotubes is regular. Specifically, when the carbon nanotube film comprises a disordered arrangement of carbon nanotubes, the carbon nanotubes are entangled or isotropically aligned; when the carbon nanotube film comprises an ordered arrangement of carbon nanotubes, The carbon nanotubes are arranged in a preferred orientation in one direction or in a plurality of directions. By "preferred orientation" is meant that most of the carbon nanotubes in the carbon nanotube film have a greater probability of orientation in one or more directions; That is, the axial direction of most of the carbon nanotubes in the carbon nanotube film extends substantially in the same direction or in the plural direction.

當所述奈米碳管膜為奈米碳管拉膜或奈米碳管線時，步驟(S20)可包括以下具體步驟： When the carbon nanotube film is a carbon nanotube film or a nano carbon line, the step (S20) may include the following specific steps:

步驟(S210)，形成至少一奈米碳管陣列。 In step (S210), at least one carbon nanotube array is formed.

提供一基底，所述奈米碳管陣列形成於所述基底表面。所述奈米碳管陣列由複數奈米碳管組成，該奈米碳管為單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中之一種或多種。本實施例中，該複數奈米碳管為多壁奈米碳管，且該複數奈米碳管基本上相互平行且垂直於所述基底，該奈米碳管陣列不含雜質，如無定型碳或殘留之催化劑金屬顆粒等。所述奈米碳管陣列之製備方法包括化學氣相沈積法、鐳射蒸發法、鐳射燒蝕法等，所述奈米碳管陣列之製備方法不限，可參見公告號為I303239之中華民國專利說明書。優選地，該奈米碳管陣列為超順排奈米碳管陣列。 A substrate is provided, the array of carbon nanotubes being formed on a surface of the substrate. The carbon nanotube array is composed of a plurality of carbon nanotubes, which are one or more of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. In this embodiment, the plurality of carbon nanotubes are multi-walled carbon nanotubes, and the plurality of carbon nanotubes are substantially parallel to each other and perpendicular to the substrate, and the array of carbon nanotubes contains no impurities, such as amorphous Carbon or residual catalyst metal particles, etc. The preparation method of the carbon nanotube array includes a chemical vapor deposition method, a laser evaporation method, a laser ablation method, etc., and the preparation method of the carbon nanotube array is not limited, and the publication number is I303239, the Republic of China patent. Instructions. Preferably, the array of carbon nanotubes is a super-sequential carbon nanotube array.

步驟(S220)，從所述奈米碳管陣列中位取獲得一奈米碳管拉膜或奈米碳管線。 In step (S220), a carbon nanotube film or a nanocarbon line is obtained from the carbon nanotube array.

本實施例採用具有一定寬度之膠帶、鑷子或夾子接觸奈米碳管陣列以選定一具有一定寬度之複數奈米碳管；以一定速度拉伸該選定之奈米碳管，該拉取方向沿基本垂直於奈米碳管陣列之生長方向。從而形成首尾相連之複數奈米碳管片段，進而形成一連續之奈米碳管拉膜。在上述拉伸過程中，該複數奈米碳管片段在拉力作用下沿拉伸方向逐漸脫離基底之同時，由於凡得瓦力作用，該 選定之複數奈米碳管片段分別與其他奈米碳管片段首尾相連地連續地被拉出，從而形成一連續、均勻且具有一定寬度之奈米碳管拉膜。該奈米碳管拉膜之寬度與奈米碳管陣列所生長之基底之尺寸有關，該奈米碳管拉膜之長度不限，可根據實際需求制得。可理解，當該奈米碳管拉膜之寬度很窄之情況下，可形成所述奈米碳管線。 In this embodiment, a carbon nanotube array having a certain width is used to contact the carbon nanotube array to select a plurality of carbon nanotubes having a certain width; and the selected carbon nanotubes are stretched at a certain speed, the pulling direction along the pulling direction It is substantially perpendicular to the growth direction of the carbon nanotube array. Thereby, a plurality of carbon nanotube segments connected end to end are formed, thereby forming a continuous carbon nanotube film. In the above stretching process, the plurality of carbon nanotube segments are gradually separated from the substrate in the stretching direction under the action of tension, and due to the effect of van der Waals force, The selected plurality of carbon nanotube segments are continuously pulled out end to end with other carbon nanotube segments, thereby forming a continuous, uniform carbon nanotube film having a certain width. The width of the carbon nanotube film is related to the size of the substrate on which the carbon nanotube array is grown. The length of the carbon nanotube film is not limited and can be obtained according to actual needs. It can be understood that the nanocarbon pipeline can be formed when the width of the carbon nanotube film is narrow.

步驟(S230)，將所述奈米碳管拉膜或奈米碳管線纏繞於所述支撐體上形成一奈米碳管層。 In step (S230), the carbon nanotube film or nano carbon line is wound on the support to form a carbon nanotube layer.

將所述奈米碳管拉膜或奈米碳管線纏繞於所述支撐體上形成一奈米碳管層之方法包括以下步驟：首先，將通過以上方法製備之所述奈米碳管拉膜或奈米碳管線之一端固定於所述線狀支撐體表面；其次，使該線狀支撐體繞其中心軸旋轉之同時沿其中心軸延伸方向做直線運動，即可得到一表面螺旋纏繞有奈米碳管拉膜或奈米碳管線之線狀支撐體。其中，所述奈米碳管拉膜或奈米碳管線中大多數奈米碳管之螺旋方向與支撐體之軸心之延伸方向具有一定之交叉角α，0°<α≦90°。可理解，在奈米碳管拉膜厚度或奈米碳管線直徑一定之情況下，交叉角α越小，則纏繞得到之奈米碳管層就越薄，交叉角α越大，則纏繞得到之奈米碳管層之厚度就越厚。 The method for winding the carbon nanotube film or nano carbon line on the support to form a carbon nanotube layer comprises the following steps: First, the carbon nanotube film prepared by the above method is drawn Or one end of the carbon carbon pipeline is fixed to the surface of the linear support body; secondly, the linear support body is linearly moved along the direction of the central axis while rotating around the central axis thereof, thereby obtaining a surface spirally wound A carbon nanotube pull film or a linear support of a carbon nanotube line. Wherein, the spiral direction of most of the carbon nanotubes in the carbon nanotube film or the nanocarbon pipeline has a certain intersection angle α with the extending direction of the axis of the support body, 0°<α≦90°. It can be understood that, in the case where the thickness of the carbon nanotube film or the diameter of the carbon nanotube line is constant, the smaller the cross angle α, the thinner the carbon nanotube layer obtained by winding, and the larger the crossing angle α, the winding is obtained. The thickness of the carbon nanotube layer is thicker.

步驟(S30)，移除所述線狀支撐體，得到一由奈米碳管層圍成之中空之管狀奈米碳管預製體。 Step (S30), removing the linear support body to obtain a hollow tubular carbon nanotube preform surrounded by a carbon nanotube layer.

將所述的線狀支撐體通過化學方法、物理方法或機械方法移除。 當採用活潑之金屬材料及其合金作該線狀支撐體時，如鐵或鋁及其合金，可使用一酸性溶液與該活潑之金屬材料反應，並將該線狀支撐體移除；當採用不活潑之金屬材料及其合金作該線狀支撐體時，如金或銀及其合金，可使用加熱蒸發之方法，移除所述線狀支撐體；當採用高分子材料作線狀支撐體時，可使用一拉伸裝置沿所述線狀支撐體之中心軸方向拉出所述線狀支撐體。本實施例採用濃度為0.5mol/L之鹽酸溶液腐蝕纏繞有奈米碳管拉膜之鋁線，將該鋁線移除。可理解，根據線狀支撐體直徑之不同可得到不同內徑之奈米碳管結構。 The linear support is removed by chemical, physical or mechanical means. When a living metal material and an alloy thereof are used as the linear support, such as iron or aluminum and alloys thereof, an acidic solution may be used to react with the active metal material, and the linear support may be removed; When the inactive metal material and its alloy are used as the linear support, such as gold or silver and its alloy, the linear support can be removed by heating and evaporation; when the polymer material is used as the linear support At the time, the linear support may be pulled out along the central axis direction of the linear support using a stretching device. In this embodiment, an aluminum wire wound with a carbon nanotube film is etched using a hydrochloric acid solution having a concentration of 0.5 mol/L, and the aluminum wire is removed. It can be understood that different inner diameter carbon nanotube structures can be obtained according to the diameter of the linear support.

如圖9所示，所述管狀奈米碳管預製體為複數奈米碳管圍成之一奈米碳管管狀結構，所述奈米碳管管狀結構中所述複數奈米碳管圍繞一中空之線狀軸心螺旋延伸，相鄰之奈米碳管之間通過凡得瓦力緊密相連。 As shown in FIG. 9, the tubular carbon nanotube preform is a tubular carbon nanotube tubular structure surrounded by a plurality of carbon nanotubes, and the plurality of carbon nanotubes surround the tubular carbon nanotube tubular structure. The hollow linear axis extends spirally, and adjacent carbon nanotubes are closely connected by van der Waals.

步驟(S40)，將該管狀奈米碳管預製體熔斷，形成所述電子發射體。 In step (S40), the tubular carbon nanotube preform is melted to form the electron emitter.

該管狀奈米碳管預製體之熔斷方法主要有三種。 There are three main methods of fusing the tubular carbon nanotube preform.

方法一：電流熔斷法，即將該管狀奈米碳管預製體通電流加熱熔斷。方法一可在真空環境下或惰性氣體保護之環境下進行，其具體包括以下步驟：首先，將該管狀奈米碳管預製體懸空設置於一真空室內或充滿惰性氣體之反應室。 Method 1: Current fusing method, that is, the tubular carbon nanotube preform is heated and blown by current. The method 1 can be carried out under a vacuum environment or an inert gas protection environment, and specifically includes the following steps: First, the tubular carbon nanotube preform is suspended in a vacuum chamber or a reaction chamber filled with an inert gas.

該真空室包括一可視視窗及一陽極接線柱與一陰極接線柱，且其 真空度低於1×10^-1帕，優選為2×10^-5帕。該管狀奈米碳管預製體兩端分別與陽極接線柱及陰極接線柱電性連接。本實施例中，該陽極接線柱與陰極接線柱為直徑0.5毫米之銅絲導線，該管狀奈米碳管預製體之直徑25微米，長度2厘米。 The vacuum chamber includes a visible window and an anode terminal and a cathode terminal, and has a vacuum of less than 1 × 10 ^-1 Pa, preferably 2 × 10 ^-5 Pa. The tubular carbon nanotube preform is electrically connected to the anode terminal and the cathode terminal respectively. In this embodiment, the anode terminal and the cathode terminal are copper wire wires having a diameter of 0.5 mm, and the tubular carbon nanotube preform has a diameter of 25 μm and a length of 2 cm.

所述的充滿惰性氣體之反應室結構與真空室相同，惰性氣體可為氦氣或氬氣等。 The reaction chamber filled with an inert gas has the same structure as the vacuum chamber, and the inert gas may be helium or argon.

其次，在該管狀奈米碳管預製體兩端施加一電壓，通入電流加熱熔斷。 Next, a voltage is applied across the tubular carbon nanotube preform, and a current is applied to heat the fuse.

在陽極接線柱與陰極接線柱之間施加一40伏特直流電壓。本技術領域人員應當明白，陽極接線柱與陰極接線柱之間施加之電壓與所選之管狀奈米碳管預製體之內徑、外經、壁厚及長度有關。在直流條件下通過焦耳熱加熱管狀奈米碳管預製體。加熱溫度優選為2000K至2400K，加熱時間小於1小時。在真空直流加熱過程中，通過管狀奈米碳管預製體之電流會逐漸上升，但很快電流就開始下降直到管狀奈米碳管預製體被熔斷。在熔斷前，管狀奈米碳管預製體上會出現一亮點，奈米碳管長線從該亮點處熔斷。 A 40 volt DC voltage is applied between the anode and cathode posts. Those skilled in the art will appreciate that the voltage applied between the anode and cathode posts is related to the inner diameter, outer diameter, wall thickness and length of the selected tubular carbon nanotube preform. The tubular carbon nanotube preform is heated by Joule heat under direct current conditions. The heating temperature is preferably from 2000 K to 2400 K, and the heating time is less than 1 hour. During vacuum DC heating, the current through the tubular carbon nanotube preform gradually rises, but the current begins to drop until the tubular carbon nanotube preform is melted. Before the fuse, a bright spot appears on the tubular carbon nanotube preform, and the long carbon nanotube line is blown from the bright spot.

由於管狀奈米碳管預製體中各點之電阻不同，使得各點之分電壓也不同。在管狀奈米碳管預製體中電阻較大之一點，會得到較大之分電壓，從而具有較大加熱功率，產生較多之焦耳熱，使該點之溫度迅速升高。在熔斷之過程中，該點之電阻會越來越大，導致該點之分電壓也越來越大，同時，溫度也越來越大直到該點斷裂，形成二電子發射端。在熔斷之瞬間，陰極與陽極之間會產生 一非常小的間隙，同時在熔斷點位置附近，由於碳蒸發，真空度較差，並且越靠近熔斷處，碳之揮發越明顯，這些因素會使熔斷之瞬間在熔斷點附近產生氣體電離。電離後之離子轟擊熔斷之管狀奈米碳管預製體之端部，越靠近熔斷處，轟擊之離子越多，從而該管狀奈米碳管預製體端部形成一類圓錐形縮口，形成所述電子發射部。 Since the resistance of each point in the tubular carbon nanotube preform is different, the voltages at the respective points are also different. At one point of the larger resistance in the tubular carbon nanotube preform, a larger partial voltage is obtained, thereby having a larger heating power, generating more Joule heat, and the temperature of the point is rapidly increased. During the fusing process, the resistance at this point will become larger and larger, causing the voltage of the point to become larger and larger, and at the same time, the temperature is also increased until the point breaks, forming a two-electron emitting end. At the moment of melting, between the cathode and the anode A very small gap, at the same time near the location of the melting point, due to carbon evaporation, the vacuum is poor, and the closer to the fuse, the more pronounced the volatilization of carbon, these factors will cause gas ionization near the melting point at the moment of melting. After the ionization, the end of the tubular carbon nanotube preform is blown, and the closer to the fuse, the more ions are bombarded, so that the tubular carbon nanotube preform forms a conical shape at the end of the tubular carbon nanotube preform. Electronic emission department.

本實施例採用之真空熔斷法，避免了管狀奈米碳管預製體熔斷後得到的奈米碳管管狀結構的錐面形結構之開口受到污染，而且，加熱過程中管狀奈米碳管預製體之機械強度會有一定提高，使之具備優良場發射性能。 The vacuum melting method adopted in the embodiment avoids contamination of the opening of the tapered structure of the tubular structure of the carbon nanotube obtained after the tubular carbon nanotube preform is melted, and the tubular carbon nanotube preform in the heating process The mechanical strength will be improved to give it excellent field emission performance.

方法二：電子轟擊法，即首先加熱該管狀奈米碳管預製體，然後提供一電子發射源，使用該電子發射源轟擊該管狀奈米碳管預製體，使該管狀奈米碳管預製體在被轟擊處熔斷。方法二具體包括以下步驟：首先，加熱該管狀奈米碳管預製體。 Method 2: electron bombardment method, that is, first heating the tubular carbon nanotube preform, and then providing an electron emission source, using the electron emission source to bombard the tubular carbon nanotube preform to make the tubular carbon nanotube preform Blowed at the bombardment. The method 2 specifically includes the following steps: First, heating the tubular carbon nanotube preform.

將該管狀奈米碳管預製體放置於一真空系統。該真空系統之真空度維持1×10^-4帕至1×10^-5帕。在該管狀奈米碳管預製體中通入電流，加熱該管狀奈米碳管預製體至1800K至2500K。 The tubular carbon nanotube preform is placed in a vacuum system. The vacuum of the vacuum system is maintained at 1 x 10 ^-4 Pa to 1 x 10 ^-5 Pa. An electric current is introduced into the tubular carbon nanotube preform to heat the tubular carbon nanotube preform to 1800K to 2500K.

其次，提供一電子發射源，使用該電子發射源轟擊該管狀奈米碳管預製體，使該管狀奈米碳管預製體在被轟擊處熔斷。 Secondly, an electron emission source is provided, and the tubular carbon nanotube preform is bombarded with the electron emission source, so that the tubular carbon nanotube preform is blown at the bombardment.

該電子發射源包括一具有複數場發射尖端之奈米碳管長線。將該電子發射源接入一低電位，該管狀奈米碳管預製體接入一高電位 。將該電子發射源與該管狀奈米碳管預製體垂直放置，並使該電子發射源指向該管狀奈米碳管預製體被轟擊處。該電子發射源發射之電子束轟擊該管狀奈米碳管預製體之側壁，使該管狀奈米碳管預製體被轟擊處之溫度升高。這樣一來，該管狀奈米碳管預製體被轟擊處具有最高之溫度。該管狀奈米碳管預製體會在該轟擊處熔斷，形成複數場發射尖端。 The electron emission source comprises a long line of carbon nanotubes having a plurality of field emission tips. The electron emission source is connected to a low potential, and the tubular carbon nanotube preform is connected to a high potential . The electron emission source is placed perpendicular to the tubular carbon nanotube preform, and the electron emission source is directed to the tubular carbon nanotube preform to be bombarded. The electron beam emitted by the electron emission source bombards the sidewall of the tubular carbon nanotube preform, so that the temperature of the tubular carbon nanotube preform is bombarded. In this way, the tubular carbon nanotube preform has the highest temperature at the bombardment. The tubular carbon nanotube preform will be blown at the bombardment to form a plurality of field emission tips.

進一步地，上述電子發射源相對於該管狀奈米碳管預製體之具體定位，可通過一操作臺來實現。其中，該電子發射源與該管狀奈米碳管預製體之間之距離為50微米至2毫米。本發明實施例優選將該管狀奈米碳管預製體固定到一可實現三維移動之操作臺上。通過調節該管狀奈米碳管預製體在三維空間之移動，使該電子發射源與該管狀奈米碳管預製體在同一平面內並且互相垂直。該電子發射源與該管狀奈米碳管預製體之間之距離為50微米。 Further, the specific positioning of the electron emission source relative to the tubular carbon nanotube preform can be realized by a console. Wherein, the distance between the electron emission source and the tubular carbon nanotube preform is 50 micrometers to 2 millimeters. In an embodiment of the invention, the tubular carbon nanotube preform is preferably fixed to a console capable of three-dimensional movement. By adjusting the movement of the tubular carbon nanotube preform in three dimensions, the electron emission source is in the same plane and perpendicular to the tubular carbon nanotube preform. The distance between the electron emission source and the tubular carbon nanotube preform is 50 microns.

可理解，為了提供更大之場發射電流以提高該管狀奈米碳管預製體局域之溫度，可使用複數電子發射源同時提供場發射電流。進一步地，還可使用其他形式之電子束來實現該管狀奈米碳管預製體之定點熔斷，比如熱陰極電子源發射之電子束或者其他常見場發射電子源發射之電子束。 It will be appreciated that in order to provide a larger field emission current to increase the temperature of the tubular carbon nanotube preform local, a plurality of electron emission sources can be used to simultaneously provide a field emission current. Further, other forms of electron beams may be used to effect spot-spotting of the tubular carbon nanotube preform, such as an electron beam emitted by a hot cathode electron source or an electron beam emitted by other common field emission electron sources.

方法三：鐳射照射法，即以一定功率及掃描速度之鐳射照射該管狀奈米碳管預製體，在該管狀奈米碳管預製體通入電流，該管狀奈米碳管預製體在被鐳射照射處熔斷，形成所述電子發射體。方法三具體包括以下步驟： 首先，以一定功率及掃描速度之鐳射照射該管狀奈米碳管預製體。 Method 3: a laser irradiation method, that is, irradiating the tubular carbon nanotube preform with a laser of a certain power and a scanning speed, and introducing a current into the tubular carbon nanotube preform, the tubular carbon nanotube preform being laser-injected The irradiation is blown to form the electron emitter. Method 3 specifically includes the following steps: First, the tubular carbon nanotube preform is irradiated with laser light of a certain power and scanning speed.

將上述之管狀奈米碳管預製體放置於空氣或者含有氧化性氣體之氣氛中。以一定功率及掃描速度之鐳射照射該管狀奈米碳管預製體。當該碳管狀奈米碳管預製體之某一位置被鐳射照射溫度升高後，空氣中之氧氣會氧化該位置處之奈米碳管，產生缺陷，從而使該位置處之電阻變大。 The above-described tubular carbon nanotube preform is placed in an atmosphere of air or an oxidizing gas. The tubular carbon nanotube preform is irradiated with laser light of a certain power and scanning speed. When a position of the carbon tubular carbon nanotube preform is raised by the laser irradiation temperature, the oxygen in the air oxidizes the carbon nanotube at the position to cause a defect, thereby increasing the electric resistance at the position.

可理解，鐳射照射該管狀奈米碳管預製體之時間及該鐳射之功率成反比。即鐳射功率較大時，鐳射照射該管狀奈米碳管預製體之時間較短；鐳射功率較小時，鐳射照射該管狀奈米碳管預製體之時間較長。 It can be understood that the time during which the laser irradiates the tubular carbon nanotube preform is inversely proportional to the power of the laser. That is, when the laser power is large, the time for the laser to irradiate the tubular carbon nanotube preform is short; when the laser power is small, the laser irradiates the tubular carbon nanotube preform for a long time.

本發明中，鐳射之功率為1瓦~60瓦，掃描速度為100-2000毫米/秒。本發明實施例優選的鐳射之功率為12瓦，掃描速度為1000毫米/秒。本發明實施例中之鐳射可為二氧化碳鐳射、半導體鐳射、紫外鐳射等任何形式之鐳射，只要能產生加熱之效果即可。 In the present invention, the laser power is 1 watt to 60 watts, and the scanning speed is 100-2000 mm/second. Preferably, the laser power of the embodiment of the invention is 12 watts and the scanning speed is 1000 mm/second. The laser in the embodiment of the present invention may be any form of laser such as carbon dioxide laser, semiconductor laser, or ultraviolet laser, as long as the effect of heating can be produced.

其次，在該管狀奈米碳管預製體通入電流，管狀奈米碳管預製體在被鐳射照射處熔斷，形成兩個奈米碳管管狀結構。 Secondly, a current is applied to the tubular carbon nanotube preform, and the tubular carbon nanotube preform is melted by the laser irradiation to form two tubular structures of carbon nanotubes.

將經過鐳射照射後之管狀奈米碳管預製體放置於一真空系統中，該奈米碳管管狀結構兩端分別與陽極接線柱及陰極接線柱電性連接後通入電流。該管狀奈米碳管預製體中被鐳射照射之部位為溫度最高之部位，最後該管狀奈米碳管預製體會在該處熔斷，形成兩個奈米碳管管狀結構。 The tubular carbon nanotube preform after laser irradiation is placed in a vacuum system, and the carbon nanotube tubular structure is electrically connected to the anode terminal and the cathode terminal respectively, and then an electric current is supplied. The portion of the tubular carbon nanotube preform that is irradiated with laser light is the portion with the highest temperature, and finally the tubular carbon nanotube preform is melted there to form two tubular structures of carbon nanotubes.

可理解，還可將該管狀奈米碳管預製體設置於一真空或者充滿惰性氣體之氣氛中。該管狀奈米碳管預製體在被電流加熱之同時，以一定功率及掃描速度之鐳射照射該管狀奈米碳管預製體。由於為真空或者惰性氣體之氣氛，故該管狀奈米碳管預製體可被穩定地加熱。當該管狀奈米碳管預製體之某一位置被鐳射照射溫度升高後，該位置為溫度最高之部位，最後該管狀奈米碳管預製體會在該處燒斷。 It will be appreciated that the tubular carbon nanotube preform can also be placed in a vacuum or an atmosphere filled with an inert gas. The tubular carbon nanotube preform irradiates the tubular carbon nanotube preform with laser light of a certain power and scanning speed while being heated by current. The tubular carbon nanotube preform can be stably heated due to the atmosphere of a vacuum or an inert gas. When a position of the tubular carbon nanotube preform is raised by the laser irradiation temperature, the position is the highest temperature portion, and finally the tubular carbon nanotube preform is blown there.

同時由於管狀奈米碳管預製體兩端分別固定於陽極接線柱與陰極接線柱，並且相鄰奈米碳管之間存在凡得瓦力，因此在熔斷之過程中，熔斷處之奈米碳管在遠離熔斷處並與之相鄰之奈米碳管之作用下，其螺旋方向逐漸趨向於延伸方向，即，奈米碳管之螺旋方向與所述延伸方向所形成之交叉角α逐漸接近於0°並分散，形成所述複數發散之電子發射尖端。同時，由於管狀奈米碳管預製體在熔斷之瞬間，在熔斷點位置附近，由於碳之蒸發，真空度較差，且越接近熔斷處，碳之揮發越明顯，使得所述管狀奈米碳管預製體熔斷處形成一類圓錐形縮口，從而形成所述奈米碳管發射部。 At the same time, since the two ends of the tubular carbon nanotube preform are respectively fixed to the anode terminal and the cathode terminal, and the van der Waals force exists between the adjacent carbon nanotubes, the carbon of the fuse is melted. Under the action of the carbon nanotubes away from the fuse and adjacent thereto, the spiral direction gradually tends to extend, that is, the spiral direction of the carbon nanotubes gradually approaches the intersection angle α formed by the extending direction. Disperse at 0° to form the complex divergent electron-emitting tip. At the same time, since the tubular carbon nanotube preform is at the moment of melting, near the position of the melting point, due to the evaporation of carbon, the degree of vacuum is poor, and the closer to the fuse, the more volatile the carbon is, so that the tubular carbon nanotube The preform fuse forms a conical shaped constriction to form the carbon nanotube emitter.

另一方面，如果省略步驟(S30)移除所述線狀支撐體之步驟，而直接在(S20)步驟之基礎進行(S40)熔斷之步驟，則可得到所述一線狀支撐體表面設置有奈米碳管層之奈米碳管複合結構，所述線狀支撐體可提高所述電子發射體之機械強度。 On the other hand, if the step of removing the linear support in step (S30) is omitted, and the step of fusing (S40) is performed directly on the basis of the step (S20), the surface of the linear support can be obtained. A carbon nanotube composite structure of a carbon nanotube layer, which can increase the mechanical strength of the electron emitter.

如圖10所示，進一步的，所述場發射像素管100包括一閘極體113，所述閘極體113為一具有筒狀結構之中空柱體，其具有一頂面 及一從該頂面沿遠離陽極112之方向延伸之環狀側壁。該閘極體113之頂面具有一正對於電子發射體108之電子發射端122之出射口115。該閘極體113之橫截面可為圓形，橢圓形或三角形，四邊形等多邊形。該閘極體113環繞電子發射體108設置，即電子發射體108收容於閘極體113內，且電子發射體108之電子發射端122正對於閘極體113頂面之出射口115。在本實施例中，該閘極體113為一中空圓柱體，其材料為導電材料，且與所述陰極104與陽極112分別間隔設置。所述閘極體113通過柵極電極117電連接於殼體102外部。當給場發射像素管100施加工作電壓時，該閘極體113與電子發射體108之間形成電場，奈米碳管管狀結構在該電場作用下發射電子，穿過閘極體頂面之出射口115，再在陽極112高電壓作用下加速以轟擊螢光粉層110。同時由於電子發射體108位於閘極體113內，閘極體113可起到屏蔽作用，以屏蔽陽極112之高壓，保護電子發射體108，延長奈米碳管管狀結構之使用壽命。通過調節柵極電極117上之電壓可控制電子發射體108之發射電流，從而調節螢光屏之亮度。可理解，所述閘極體113為一可選結構。 As shown in FIG. 10, further, the field emission pixel tube 100 includes a gate body 113, and the gate body 113 is a hollow cylinder having a cylindrical structure and has a top surface. And an annular sidewall extending from the top surface in a direction away from the anode 112. The top mask of the gate body 113 has an exit 115 for the electron emitting end 122 of the electron emitter 108. The gate body 113 may have a circular, elliptical or triangular shape, a quadrangular shape or the like. The gate body 113 is disposed around the electron emitter 108, that is, the electron emitter 108 is received in the gate body 113, and the electron emission end 122 of the electron emitter 108 is opposite to the exit port 115 of the top surface of the gate body 113. In the present embodiment, the gate body 113 is a hollow cylinder, the material of which is a conductive material, and is spaced apart from the cathode 104 and the anode 112, respectively. The gate body 113 is electrically connected to the outside of the casing 102 through the gate electrode 117. When an operating voltage is applied to the field emission pixel tube 100, an electric field is formed between the gate body 113 and the electron emitter 108, and the tubular structure of the carbon nanotube emits electrons under the electric field and exits through the top surface of the gate body. The port 115 is further accelerated by the high voltage of the anode 112 to bombard the phosphor layer 110. At the same time, since the electron emitter 108 is located in the gate body 113, the gate body 113 can serve as a shielding function to shield the high voltage of the anode 112, protect the electron emitter 108, and prolong the service life of the tubular structure of the carbon nanotube. The brightness of the phosphor screen can be adjusted by adjusting the voltage on the gate electrode 117 to control the emission current of the electron emitter 108. It can be understood that the gate body 113 is an optional structure.

另外，該場發射像素管100進一步包括一位於殼體102內之吸氣劑118，用於吸附場發射像素管內之殘餘氣體，維持場發射像素管內部之真空度。該吸氣劑118可為蒸散型吸氣劑金屬薄膜，在殼體102封接後通過高頻加熱蒸鍍之方式形成於殼體102之內壁上。該吸氣劑118也可為非蒸散型吸氣劑，設置於陰極支撐體106上。所述的非蒸散型吸氣劑118之材料主要包括鈦、鋯、鉿、釷、稀 土金屬及其合金。 In addition, the field emission pixel tube 100 further includes a getter 118 disposed in the housing 102 for adsorbing residual gas in the field emission pixel tube to maintain the vacuum inside the field emission pixel tube. The getter 118 may be an evaporable getter metal film formed on the inner wall of the casing 102 by high-frequency heating and evaporation after the casing 102 is sealed. The getter 118 may also be a non-evaporable getter disposed on the cathode support 106. The material of the non-evaporable getter 118 mainly includes titanium, zirconium, hafnium, tantalum and rare Earth metal and its alloys.

當該場發射像素管100工作時，分別給陽極112及陰極104施加不同之電壓使得陽極112及陰極104之間形成電場，通過電場作用使電子發射體108尖端即奈米碳管線發射出電子，電子轟擊螢光粉層110上之螢光物質，發出可見光。可見光透過陽極112通過場發射像素管100之出光部124射出，複數這樣之場發射像素管100排列起來就可用來照明或資訊顯示。 When the field emission pixel tube 100 is operated, different voltages are applied to the anode 112 and the cathode 104 respectively, so that an electric field is formed between the anode 112 and the cathode 104, and an electron field acts to emit electrons at the tip of the electron emitter 108, that is, the nanocarbon pipeline. The electrons bombard the fluorescent material on the phosphor layer 110 to emit visible light. The visible light is transmitted through the anode 112 through the light exit portion 124 of the field emission pixel tube 100, and a plurality of such field emission pixel tubes 100 are arranged for illumination or information display.

請參閱圖11，本發明第二實施例提供一種場發射像素管200，其基本結構與第一實施例所述場發射像素管100結構基本相同，其不同點在於，所述場發射像素管200中螢光粉層設置於一陽極端面上，且遠離出光部設置。所述場發射像素管200包括一殼體202及一場發射單元203，所述場發射單元203位於所述殼體202內，所述殼體202為所述場發射單元提供一真空空間。 Referring to FIG. 11 , a second embodiment of the present invention provides a field emission pixel tube 200 having a basic structure substantially the same as that of the field emission pixel tube 100 of the first embodiment, except that the field emission pixel tube 200 is different. The medium phosphor layer is disposed on an anode end surface and disposed away from the light exit portion. The field emission pixel tube 200 includes a housing 202 and a field emission unit 203. The field emission unit 203 is located in the housing 202. The housing 202 provides a vacuum space for the field emission unit.

所述場發射單元包括一陰極204，一螢光粉層210，一陽極212及一陰極引線216及一陽極引線214。所述陰極204與陽極212間隔設置，所述陰極引線216與陰極204電連接，所述陽極引線214與所述陽極212電連接，所述陰極204可發射電子，其發射之電子在所述陰極204與陽極212產生之電場之作用下到達螢光粉層210，轟擊螢光粉層210中之螢光物質而使之發光。 The field emission unit includes a cathode 204, a phosphor layer 210, an anode 212 and a cathode lead 216 and an anode lead 214. The cathode 204 is spaced apart from the anode 212, the cathode lead 216 is electrically coupled to the cathode 204, the anode lead 214 is electrically coupled to the anode 212, and the cathode 204 can emit electrons that emit electrons at the cathode. 204 and the electric field generated by the anode 212 reach the phosphor layer 210, and bombard the phosphor in the phosphor layer 210 to emit light.

所述殼體202為一真空密封之結構。在本實施例中，該殼體202為一中空玻璃圓柱體，且該圓柱體直徑為1毫米至5毫米，高度為2毫米至5毫米。該殼體202之一端包括一出光部224。該殼體202材 料為一透明材料如：石英石或玻璃。可理解的，該殼體202還可為中空之立方體、三棱柱或其他多邊形棱柱，本領域技術人員可根據實際情況進行選擇。 The housing 202 is a vacuum sealed structure. In the present embodiment, the housing 202 is a hollow glass cylinder having a diameter of 1 mm to 5 mm and a height of 2 mm to 5 mm. One end of the housing 202 includes a light exit portion 224. The shell 202 material The material is a transparent material such as quartz or glass. It can be understood that the housing 202 can also be a hollow cube, a triangular prism or other polygonal prism, and can be selected by a person skilled in the art according to actual conditions.

所述陰極204包括一陰極支撐體206與一電子發射體208。該陰極支撐體206之一端與電子發射體208一端電性連接，另一端通一陰極引線216電性連接到殼體202外。所述陰極支撐體206為一導電體，如：金屬絲或金屬桿。該陰極支撐體206形狀不限，且能夠導熱並具有一定強度。本實施例中該陰極支撐體206優選為鎳絲。 The cathode 204 includes a cathode support 206 and an electron emitter 208. One end of the cathode support body 206 is electrically connected to one end of the electron emitter 208, and the other end is electrically connected to the outside of the casing 202 through a cathode lead 216. The cathode support 206 is an electrical conductor such as a wire or a metal rod. The cathode support body 206 is not limited in shape and is capable of conducting heat and having a certain strength. The cathode support 206 in the present embodiment is preferably a nickel wire.

所述電子發射體208包括一由複數奈米碳管圍成之奈米碳管管狀結構。所述奈米碳管管狀結構中大多數奈米碳管圍繞一中空之線狀軸心螺旋延伸，可理解，所述奈米碳管管狀結構中也存在極少數並非圍繞線狀軸心螺旋而為隨機排列之奈米碳管，該少數隨機排列之奈米碳管的延伸方向沒有規則。然，該少數隨機排列之奈米碳管並不影響所述奈米碳管管狀結構之排列方式及奈米碳管之延伸方向。在此，將線狀軸心之長度方向定義為複數奈米碳管之延伸方向，將複數奈米碳管圍繞所述線狀軸心螺旋形成之方向定義為螺旋方向。在螺旋方向上相鄰之奈米碳管通過凡得瓦力首尾相連，在延伸方向上相鄰之奈米碳管通過凡得瓦力緊密結合。所述奈米碳管管狀結構中大多數奈米碳管之螺旋方向與所述線狀軸心之長度方向形成一定之交叉角α，且0°<α≦90°。所述電子發射體208與第一實施例所述場發射像素管100中之電子發射體108的材料、結構及製備方法相同。 The electron emitter 208 includes a tubular structure of a carbon nanotube surrounded by a plurality of carbon nanotubes. Most of the carbon nanotubes in the tubular structure of the carbon nanotubes extend spirally around a hollow linear axis. It is understood that there are also a few of the tubular structures of the carbon nanotubes that are not spiral around the linear axis. For randomly arranged carbon nanotubes, the direction of extension of the minority of randomly arranged carbon nanotubes is not regular. However, the minority of randomly arranged carbon nanotubes does not affect the arrangement of the tubular structure of the carbon nanotubes and the direction in which the carbon nanotubes extend. Here, the longitudinal direction of the linear axis is defined as the extending direction of the plurality of carbon nanotubes, and the direction in which the plurality of carbon nanotubes are spirally formed around the linear axis is defined as the spiral direction. The carbon nanotubes adjacent in the spiral direction are connected end to end by van der Waals force, and the adjacent carbon nanotubes in the extending direction are tightly coupled by van der Waals force. The helical direction of most of the carbon nanotubes in the tubular structure of the carbon nanotube forms a certain intersection angle α with the longitudinal direction of the linear axis, and 0° < α ≦ 90°. The electron emitter 208 is the same as the material, structure, and preparation method of the electron emitter 108 in the field emission pixel tube 100 of the first embodiment.

所述電子發射體208具有一電子發射端222，所述電子發射端222 設置於電子發射體208遠離陰極支撐體206之一端，並向所述陽極212延伸。所述電子發射體208與電子發射端222相對之另一端與所述陰極支撐體206電連接。進一步的，所述電子發射體208之電子發射端222之正投影位於所述螢光粉層210之表面。 The electron emitter 208 has an electron emitting end 222, and the electron emitting end 222 The electron emitter 208 is disposed away from one end of the cathode support 206 and extends toward the anode 212. The other end of the electron emitter 208 opposite to the electron emission end 222 is electrically connected to the cathode support 206. Further, an orthographic projection of the electron emission end 222 of the electron emitter 208 is located on the surface of the phosphor layer 210.

所述的陽極212遠離所述殼體202之出光部224設置，即所述陽極212並未設置於所述殼體202之出光部224之位置。所述的陽極212為一導電體，如：金屬桿。該陽極212形狀不限，且能夠導熱並具有一定強度。本實施例中，陽極212優選為銅金屬桿。該銅金屬桿直徑為100微米至1厘米。可理解，該銅金屬桿直徑可根據實際需要選擇。所述陽極212之一端包括一端面220，該陽極212遠離端面220之另一端通過一陽極引線214電性連接到殼體202外。所述的端面220為一拋光之端面。該拋光之端面220可為平面、半球面、球面、錐面、凹面或其他形狀端面。 The anode 212 is disposed away from the light exit portion 224 of the housing 202, that is, the anode 212 is not disposed at the light exit portion 224 of the housing 202. The anode 212 is an electrical conductor such as a metal rod. The anode 212 is not limited in shape and is capable of conducting heat and having a certain strength. In this embodiment, the anode 212 is preferably a copper metal rod. The copper metal rod has a diameter of from 100 micrometers to 1 centimeter. It can be understood that the diameter of the copper metal rod can be selected according to actual needs. One end of the anode 212 includes an end surface 220, and the other end of the anode 212 away from the end surface 220 is electrically connected to the outside of the housing 202 through an anode lead 214. The end face 220 is a polished end face. The polished end face 220 can be a planar, hemispherical, spherical, tapered, concave or other shaped end face.

所述的螢光粉層210設置於陽極212之端面220上。該螢光粉層210之材料可為白色螢光粉，也可為單色螢光粉，例如紅色，綠色，藍色螢光粉等，當電子轟擊螢光粉層210時可發出白光或其他顏色可見光。該螢光粉層210可採用沈積法或塗敷法設置於陽極212之一端之端面220上。該螢光粉層210厚度為5至50微米。所述端面220可反射螢光粉層210發出之光。 The phosphor layer 210 is disposed on the end surface 220 of the anode 212. The material of the phosphor layer 210 may be white fluorescent powder or monochromatic fluorescent powder, such as red, green, blue fluorescent powder, etc., when the electron bombards the fluorescent powder layer 210, it may emit white light or other Color visible light. The phosphor layer 210 may be disposed on the end face 220 of one end of the anode 212 by a deposition method or a coating method. The phosphor layer 210 has a thickness of 5 to 50 microns. The end surface 220 can reflect the light emitted by the phosphor layer 210.

所述的電子發射體208與陽極212之設置可為多種位置關係，請參見圖12至圖15。可使電子發射體208之電子發射端222與陽極212之端面220正對設置；可使電子發射體208與陽極212軸向成一銳角，使電子發射端222與端面220斜對設置；可使電子發射體208 與陽極212軸向互相垂直或平行，使電子發射端222設置於端面220附近。可理解，上述設置之位置關係不限於此，只需滿足所述電子發射體208之電子發射端222為所述電子發射體208最靠近所述陽極212之端面220之一端即可。優選地，電子發射端222與端面220距離小於5毫米。 The arrangement of the electron emitter 208 and the anode 212 can be in various positional relationships, please refer to FIG. 12 to FIG. The electron emitting end 222 of the electron emitter 208 can be disposed opposite to the end surface 220 of the anode 212; the electron emitter 208 can be axially formed at an acute angle with the anode 212, so that the electron emitting end 222 and the end surface 220 are diagonally disposed; Emitter 208 The anode 212 is axially perpendicular or parallel to each other such that the electron emission end 222 is disposed adjacent to the end surface 220. It can be understood that the positional relationship of the above arrangement is not limited thereto, and only the electron emission end 222 of the electron emitter 208 is required to be one end of the end face 220 of the electron emitter 208 closest to the anode 212. Preferably, the electron emitting end 222 is less than 5 mm from the end face 220.

另外，該場發射像素管200進一步包括一位於殼體202內之吸氣劑218，用於吸附場發射像素管內殘餘氣體，維持場發射像素管內部之真空度。該吸氣劑218可為蒸散型吸氣劑金屬薄膜，在殼體202封接後通過高頻加熱蒸鍍之方式形成於靠近陰極204之殼體202內壁上。該吸氣劑218也可為非蒸散型吸氣劑，固定在陰極支撐體206上。所述的非蒸散型吸氣劑218材料主要包括鈦、鋯、鉿、釷、稀土金屬及其合金。 In addition, the field emission pixel tube 200 further includes a getter 218 located in the housing 202 for adsorbing residual gas in the field emission pixel tube to maintain the vacuum inside the field emission pixel tube. The getter 218 may be an evaporable getter metal film formed on the inner wall of the casing 202 near the cathode 204 by high frequency heating evaporation after the casing 202 is sealed. The getter 218 may also be a non-evaporable getter fixed to the cathode support 206. The non-evaporable getter 218 material mainly includes titanium, zirconium, hafnium, tantalum, rare earth metals and alloys thereof.

當該場發射像素管200工作時，在陽極212及陰極204之間加上電壓形成電場，通過電場作用使電子發射體208之電子發射端222發射出電子，發射電子到達陽極212，轟擊陽極212表面之螢光粉層210，發出可見光。其中，一部份可見光直接透過殼體202之出光部224射出，另一部份可見光則經過陽極212端面220反射後，透過殼體202之出光部224射出。 When the field emission pixel tube 200 is operated, a voltage is applied between the anode 212 and the cathode 204 to form an electric field, and the electron emission end 222 of the electron emitter 208 emits electrons by the electric field, and the emitted electrons reach the anode 212, bombarding the anode 212. The surface of the phosphor layer 210 emits visible light. The visible light is directly transmitted through the light exit portion 224 of the housing 202, and the other visible light is reflected by the end surface 220 of the anode 212 and then transmitted through the light exit portion 224 of the housing 202.

請參閱圖16，本發明第三實施例提供一種場發射像素管300，其基本結構與第二實施例所述場發射像素管200結構基本相同，其不同點在於，所述場發射像素管300包括一殼體302及設置於該殼體302內之複數場發射單元303，所述的複數場發射單元303相互間隔一定距離設置，且按照預定規律排列。所述場發射單元303 與第二實施例所述場發射單元203之材料與結構相同。每一場發射單元303包括一陰極304、一陽極312、一陰極引線316、一陽極引線314及一螢光粉層310。所述陰極304包括一陰極支撐體306與一電子發射體308，所述電子發射體308包括一電子發射端322。該陽極312之一端包括一端面320。該螢光粉層310設置於陽極312端面320上。該陽極312遠離端面320之另一端通過一陽極引線314電性連接到殼體302外。 Referring to FIG. 16, a third embodiment of the present invention provides a field emission pixel tube 300 having a basic structure substantially the same as that of the field emission pixel tube 200 of the second embodiment, except that the field emission pixel tube 300 is different. The device includes a casing 302 and a plurality of field emission units 303 disposed in the casing 302. The plurality of field emission units 303 are disposed at a distance from each other and arranged according to a predetermined rule. The field emission unit 303 The material and structure of the field emission unit 203 described in the second embodiment are the same. Each of the firing cells 303 includes a cathode 304, an anode 312, a cathode lead 316, an anode lead 314, and a phosphor layer 310. The cathode 304 includes a cathode support 306 and an electron emitter 308, and the electron emitter 308 includes an electron emission end 322. One end of the anode 312 includes an end face 320. The phosphor layer 310 is disposed on the end face 320 of the anode 312. The other end of the anode 312 away from the end surface 320 is electrically connected to the outside of the housing 302 through an anode lead 314.

另外，該場發射像素管300進一步包括一位於殼體302內壁之吸氣劑318，用於吸附場發射像素管300內殘餘氣體，維持場發射像素管300內部之真空度。該吸氣劑318可為蒸散型吸氣劑金屬薄膜，在殼體302封接後通過高頻加熱蒸鍍之方式形成於殼體302內壁上。該吸氣劑318也可為非蒸散型吸氣劑，固定在所述陰極304上或單獨一根陰極引線316上。所述的非蒸散型吸氣劑318材料主要包括鈦、鋯、鉿、釷、稀土金屬及其合金。 In addition, the field emission pixel tube 300 further includes a getter 318 on the inner wall of the housing 302 for adsorbing residual gas in the field emission pixel tube 300 to maintain the vacuum inside the field emission pixel tube 300. The getter 318 may be an evaporable getter metal film formed on the inner wall of the casing 302 by high-frequency heating and evaporation after the casing 302 is sealed. The getter 318 can also be a non-evaporable getter fixed to the cathode 304 or to a single cathode lead 316. The non-evaporable getter 318 material mainly includes titanium, zirconium, hafnium, tantalum, rare earth metals and alloys thereof.

所述殼體302為一真空密封之結構。該殼體302正對每一場發射單元303中陽極312之端面320之部份為一出光部324，所述出光部324遠離所述陽極312設置。所述場發射單元303在殼體302中可有不同之排列方式，如線性排列或按一定之陣列排列，本領域技術人員可根據實際情況進行設置。本實施例中，場發射單元303為線性等距離排列在殼體302中。可理解，當用該場發射像素管300組裝大螢幕顯示器時，複數場發射單元303之間之行距與列距要保持相等。 The housing 302 is a vacuum sealed structure. A portion of the housing 302 facing the end surface 320 of the anode 312 of each field emission unit 303 is a light exit portion 324, and the light exit portion 324 is disposed away from the anode 312. The field emission unit 303 can be arranged in a different arrangement in the housing 302, such as linearly arranged or arranged in a certain array, and can be set by a person skilled in the art according to actual conditions. In this embodiment, the field emission units 303 are linearly equidistantly arranged in the housing 302. It can be understood that when the large-screen display is assembled by the field emission pixel tube 300, the line spacing and the column spacing between the plurality of field emission units 303 are kept equal.

當該場發射像素管300工作時，在一陽極312及一陰極304之間加 上電壓形成電場，通過電場作用使電子發射體308之電子發射端322發射出電子，發射之電子到達陽極312，轟擊陽極312表面之螢光粉層310，發出可見光。其中，一部份可見光直接透過殼體302之出光部324射出，另一部份可見光則經過陽極312端面320反射後，透過殼體302之出光部324射出。由於所述場發射像素管300包括複數場發射單元303，可通過外接控制電路控制實現該複數場發射單元303單獨工作或同時工作。 When the field emission pixel tube 300 is operated, an anode 312 and a cathode 304 are added. The upper voltage forms an electric field, and the electron emission end 322 of the electron emitter 308 emits electrons by the electric field, and the emitted electrons reach the anode 312, bombarding the phosphor powder layer 310 on the surface of the anode 312, and emitting visible light. A portion of the visible light is directly transmitted through the light exit portion 324 of the housing 302, and the other portion of the visible light is reflected by the end surface 320 of the anode 312 and then transmitted through the light exit portion 324 of the housing 302. Since the field emission pixel tube 300 includes a plurality of field emission units 303, the complex field emission unit 303 can be operated alone or simultaneously by an external control circuit control.

所述場發射像素管300包括複數場發射單元303，而且，每一場發射單元303體積較小，可方便的用來組裝大型戶外顯示器，且組裝之大型戶外顯示器解析度較高。另外，該場發射像素管300中，複數場發射單元303置於一殼體302內，且每一場發射單元303中陰極304與陽極312無需精確對準，可簡化製備工藝，降低製備成本。 The field emission pixel tube 300 includes a plurality of field emission units 303. Moreover, each field emission unit 303 is small in size, and can be conveniently used to assemble a large outdoor display, and the assembled large outdoor display has a high resolution. In addition, in the field emission pixel tube 300, the plurality of field emission units 303 are placed in a housing 302, and the cathode 304 and the anode 312 in each field emission unit 303 need not be precisely aligned, which simplifies the preparation process and reduces the manufacturing cost.

請參閱圖17及圖18，本發明第四實施例提供一種場發射像素管400，所述場發射像素管400包括一殼體402及至少一場發射單元403，所述場發射單元403位於所述殼體402內。所述場發射像素管400之基本結構與第二實施例所述場發射像素管200之結構基本相同，其不同點在於，所述每一場發射單元包括複數陽極，所述複數陽極按一定規則排列。 Referring to FIG. 17 and FIG. 18, a fourth embodiment of the present invention provides a field emission pixel tube 400. The field emission pixel tube 400 includes a housing 402 and at least one field emission unit 403. Inside the housing 402. The basic structure of the field emission pixel tube 400 is substantially the same as that of the field emission pixel tube 200 of the second embodiment, except that each field emission unit includes a plurality of anodes, and the plurality of anodes are arranged according to a certain rule. .

所述每一場發射單元403包括一陰極404，一螢光粉層410，一第一陽極411，一第二陽極412及一第三陽極413。所述陰極404與所述第一陽極411、第二陽極412及第三陽極413間隔設置於所述殼體402內。所述第一陽極411、所述第一陽極411、第二陽極412及 第三陽極413圍繞所述陰極404設置，且其正投影呈三角形排列，三個陽極之正投影分別對應位於所述三角形之三個頂點。所述陰極404包括一第一電子發射體407、一第二電子發射體408及一第三電子發射體409，所述第一電子發射體407、一第二電子發射體408及一第三電子發射體409分別向與之對應之第一陽極411、第二陽極412及第三陽極413之方向延伸。該第一電子發射體407、第二電子發射體408及第三電子發射體409分別包括一電子發射端422。所述第一電子發射體407、第二電子發射體408及第三電子發射體409分別與所述第一陽極411、第二陽極412及第三陽極413一一對應，且所述第一電子發射體407、第二電子發射體408及第三電子發射體409之電子發射端422分別向所述第一陽極411、第二陽極412及第三陽極413延伸設置。所述第一陽極411、第二陽極412及第三陽極413分別具有一端面420。所述第一電子發射體407、第二電子發射體408及第三電子發射體409之電子發射端422之正投影分別位於每一電子發射體對應之陽極之端面所在之範圍內。所述螢光粉層410分別設置於所述第一陽極411、第二陽極412及第三陽極413端面之表面。 Each of the field emission units 403 includes a cathode 404, a phosphor layer 410, a first anode 411, a second anode 412, and a third anode 413. The cathode 404 is disposed in the housing 402 at intervals from the first anode 411, the second anode 412, and the third anode 413. The first anode 411, the first anode 411, the second anode 412, and The third anode 413 is disposed around the cathode 404, and its orthographic projection is arranged in a triangle, and the orthographic projections of the three anodes respectively correspond to the three vertices of the triangle. The cathode 404 includes a first electron emitter 407, a second electron emitter 408, and a third electron emitter 409, the first electron emitter 407, a second electron emitter 408, and a third electron. The emitters 409 extend in the direction of the first anode 411, the second anode 412, and the third anode 413 corresponding thereto, respectively. The first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 respectively include an electron emission end 422. The first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 are in one-to-one correspondence with the first anode 411, the second anode 412, and the third anode 413, respectively, and the first electron The electron emitters 422 of the emitter 407, the second electron emitter 408, and the third electron emitter 409 extend toward the first anode 411, the second anode 412, and the third anode 413, respectively. The first anode 411, the second anode 412, and the third anode 413 respectively have an end surface 420. The orthographic projections of the electron-emitting ends 422 of the first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 are respectively located within the range of the end face of the anode corresponding to each electron emitter. The phosphor layer 410 is disposed on the surfaces of the end faces of the first anode 411, the second anode 412, and the third anode 413, respectively.

所述殼體402為一真空密封之結構。該殼體402包括一出光部424，該出光部424與所述第一陽極411、第二陽極412及第三陽極413端面相對設置。當所述殼體402包括複數場發射單元403時，所述複數場發射單元403可有不同之排列方式，如線性排列或按一定之陣列排列，本領域技術人員可根據實際情況進行設置。 The housing 402 is a vacuum sealed structure. The housing 402 includes a light exiting portion 424 disposed opposite the end faces of the first anode 411, the second anode 412, and the third anode 413. When the housing 402 includes a plurality of field emission units 403, the plurality of field emission units 403 may be arranged in different manners, such as linearly arranged or arranged in a certain array, and those skilled in the art may set according to actual conditions.

所述陰極404進一步包括一陰極支撐體406，該陰極支撐體406為 一導電體，如：金屬絲或金屬桿。該陰極支撐體406形狀不限，且能夠導電並具有一定強度。本發明實施例中所述陰極支撐體406優選為鎳絲。所述第一電子發射體407、第二電子發射體408及第三電子發射體409之一端分別與所述陰極支撐體406之一端電性連接，且所述第一電子發射體407、第二電子發射體408及第三電子發射體409之電子發射端422分別靠近每一電子發射體對應陽極之端面設置。該場發射像素管400進一步包括一陰極引線416，所述陰極支撐體406遠離所述第一電子發射體407、第二電子發射體408及第三電子發射體409之一端通過該陰極引線416連接到所述殼體402外。 The cathode 404 further includes a cathode support 406, and the cathode support 406 is An electrical conductor, such as a wire or a metal rod. The cathode support 406 is not limited in shape and is electrically conductive and has a certain strength. The cathode support 406 in the embodiment of the invention is preferably a nickel wire. One ends of the first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 are electrically connected to one end of the cathode support 406, respectively, and the first electron emitter 407, the second The electron emitters 422 of the electron emitter 408 and the third electron emitter 409 are respectively disposed near the end faces of the corresponding anodes of the respective electron emitters. The field emission pixel tube 400 further includes a cathode lead 416, and the cathode support 406 is connected to the one end of the first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 through the cathode lead 416. Outside the housing 402.

本實施例所述的第一電子發射體407、第二電子發射體408及第三電子發射體409分別包括一奈米碳管管狀結構，所述奈米碳管管狀結構中大多數奈米碳管圍繞一中空之線狀軸心螺旋延伸，可理解，所述奈米碳管管狀結構中也存在極少數並非圍繞線狀軸心螺旋而為隨機排列之奈米碳管，該少數隨機排列之奈米碳管之延伸方向沒有規則。然，該少數隨機排列之奈米碳管並不影響所述奈米碳管管狀結構之排列方式及奈米碳管之延伸方向。在此，將線狀軸心之長度方向定義為複數奈米碳管之延伸方向，將複數奈米碳管圍繞所述線狀軸心螺旋形成之方向定義為螺旋方向。在螺旋方向上相鄰之奈米碳管通過凡得瓦力首尾相連，在延伸方向上相鄰之奈米碳管通過凡得瓦力緊密結合。所述奈米碳管管狀結構中大多數奈米碳管之螺旋方向與所述線狀軸心之長度方向形成一定之交叉角α，且0°<α≦90°。所述的第一電子發射體407、第二 電子發射體408及第三電子發射體409之結構、材料及製備方法與第一實施例所述電子發射體108相同。 The first electron emitter 407, the second electron emitter 408, and the third electron emitter 409 according to the embodiment respectively include a carbon nanotube tubular structure, and most of the nano carbon in the tubular structure of the carbon nanotube The tube extends spirally around a hollow linear axis. It can be understood that there are very few carbon nanotubes in the tubular structure of the carbon nanotube which are not randomly arranged around the linear axis, and the minority is randomly arranged. There is no rule in the direction in which the carbon nanotubes extend. However, the minority of randomly arranged carbon nanotubes does not affect the arrangement of the tubular structure of the carbon nanotubes and the direction in which the carbon nanotubes extend. Here, the longitudinal direction of the linear axis is defined as the extending direction of the plurality of carbon nanotubes, and the direction in which the plurality of carbon nanotubes are spirally formed around the linear axis is defined as the spiral direction. The carbon nanotubes adjacent in the spiral direction are connected end to end by van der Waals force, and the adjacent carbon nanotubes in the extending direction are tightly coupled by van der Waals force. The helical direction of most of the carbon nanotubes in the tubular structure of the carbon nanotube forms a certain intersection angle α with the longitudinal direction of the linear axis, and 0° < α ≦ 90°. The first electron emitter 407, the second The structure, material, and preparation method of the electron emitter 408 and the third electron emitter 409 are the same as those of the electron emitter 108 described in the first embodiment.

所述的第一陽極411、第二陽極412及第三陽極413均為一導電體，如：金屬桿。該第一陽極411、第二陽極412及第三陽極413形狀不限，且能夠導熱並具有一定強度。本發明實施例中，所述的第一陽極411、第二陽極412及第三陽極413均優選為鎳金屬桿。該金屬桿直徑為100微米至1厘米。可理解，該金屬桿直徑可根據實際需要選擇。所述第一陽極411、第二陽極412及第三陽極413呈一等邊三角形放置，其中所述陰極404設置於該等邊三角形之中心。可理解，所述第一陽極411、第二陽極412及第三陽極413之間之位置關係可根據需要進行適當之調整。所述第一陽極411、第二陽極412及第三陽極413分別包括一拋光之端面420。所述端面420可為平面、半球面、球面、錐面、凹面或其他形狀端面。所述端面420可反射螢光粉層發出之光。該場發射像素管400進一步包括一陽極引線415。所述第一陽極411、第二陽極412及第三陽極413遠離其端面420之一端分別通過該陽極引線415電性連接到所述殼體402外。 The first anode 411, the second anode 412 and the third anode 413 are each an electric conductor such as a metal rod. The first anode 411, the second anode 412, and the third anode 413 are not limited in shape, and are capable of conducting heat and having a certain strength. In the embodiment of the present invention, the first anode 411, the second anode 412 and the third anode 413 are preferably nickel metal rods. The metal rod has a diameter of from 100 micrometers to 1 centimeter. It can be understood that the diameter of the metal rod can be selected according to actual needs. The first anode 411, the second anode 412, and the third anode 413 are placed in an equilateral triangle, wherein the cathode 404 is disposed at the center of the equilateral triangle. It can be understood that the positional relationship between the first anode 411, the second anode 412 and the third anode 413 can be appropriately adjusted as needed. The first anode 411, the second anode 412, and the third anode 413 respectively include a polished end surface 420. The end surface 420 can be a flat surface, a hemispherical surface, a spherical surface, a tapered surface, a concave surface or other shaped end surfaces. The end surface 420 can reflect light emitted by the phosphor layer. The field emission pixel tube 400 further includes an anode lead 415. The first anode 411, the second anode 412, and the third anode 413 are electrically connected to the outside of the housing 402 through the anode lead 415, respectively, away from one end of the end surface 420 thereof.

所述螢光粉層410分別設置於所述第一陽極411、第二陽極412及第三陽極413之端面420之表面。所述第一陽極411、第二陽極412及第三陽極413上之螢光粉層410可分別為三種不同顏色之螢光粉。當電子轟擊所述第一陽極411、第二陽極412及第三陽極413上之螢光粉層410時可發出白光或其他顏色可見光。所述第一陽極411、第二陽極412及第三陽極413上之螢光粉層410可採用沈積法 或塗敷法設置於所述第一陽極411、第二陽極412及第三陽極413之端面420之表面。所述第一陽極411、第二陽極412及第三陽極413上之螢光粉層410厚度為5微米至50微米。可理解，所述第一陽極411、第二陽極412及第三陽極413上之螢光粉層410也可進一步分別對應設置於所述第一陽極411、第二陽極412及第三陽極413上之表面其他位置。只要所述第一電子發射體407，第二電子發射體408及第三電子發射體409所發射之電子能轟擊到對應之螢光粉層410即可。 The phosphor layer 410 is disposed on the surfaces of the end faces 420 of the first anode 411, the second anode 412, and the third anode 413, respectively. The phosphor layer 410 on the first anode 411, the second anode 412 and the third anode 413 can be three different colors of phosphor powder. White light or other color visible light may be emitted when electrons bombard the phosphor layer 410 on the first anode 411, the second anode 412, and the third anode 413. The phosphor layer 410 on the first anode 411, the second anode 412, and the third anode 413 may be deposited. Or a coating method is provided on the surfaces of the end faces 420 of the first anode 411, the second anode 412, and the third anode 413. The phosphor layer 410 on the first anode 411, the second anode 412, and the third anode 413 has a thickness of 5 micrometers to 50 micrometers. It can be understood that the phosphor layers 410 on the first anode 411, the second anode 412, and the third anode 413 can be further disposed on the first anode 411, the second anode 412, and the third anode 413, respectively. Other locations on the surface. As long as the first electron emitter 407, the electrons emitted by the second electron emitter 408 and the third electron emitter 409 can be bombarded to the corresponding phosphor layer 410.

所述的每一電子發射體與陽極之設置可為多種位置關係，其位置關係可參照第二實施例所述場發射像素管200中電子發射體與陽極之間之位置關係。 The arrangement of each of the electron emitters and the anodes may be in a plurality of positional relationships. For the positional relationship, refer to the positional relationship between the electron emitters and the anodes in the field emission pixel tube 200 of the second embodiment.

另外，該場發射像素管400進一步包括一位於殼體402內壁之吸氣劑418，用於吸附場發射像素管400內殘餘氣體，維持場發射像素管400內部之真空度。該吸氣劑418可為蒸散型吸氣劑金屬薄膜，在殼體402封接後通過高頻加熱蒸鍍之方式形成於殼體402內壁上。該吸氣劑418也可為非蒸散型吸氣劑，固定在所述陰極404上或單獨之一根陰極引線416上。所述的非蒸散型吸氣劑418材料主要包括鈦、鋯、鉿、釷、稀土金屬及其合金。 In addition, the field emission pixel tube 400 further includes a getter 418 on the inner wall of the housing 402 for adsorbing residual gas in the field emission pixel tube 400 to maintain the vacuum inside the field emission pixel tube 400. The getter 418 may be an oxidized getter metal film formed on the inner wall of the casing 402 by high-frequency heating and evaporation after the casing 402 is sealed. The getter 418 can also be a non-evaporable getter fixed to the cathode 404 or to a single cathode lead 416. The non-evaporable getter 418 material mainly includes titanium, zirconium, hafnium, tantalum, rare earth metals and alloys thereof.

當該場發射像素管400工作時，分別在所述第一陽極411、第二陽極412及第三陽極413及陰極404之間加上電壓形成電場，通過電場作用使第一電子發射體407、第二電子發射體408及第三電子發射體409發射出電子，發射之電子到達第一陽極411、第二陽極412及第三陽極413，分別轟擊第一陽極411、第二陽極412及第三 陽極413上螢光粉層410，發出可見光。其中，一部份可見光直接透過出光部424射出，另一部份可見光則經過端面420反射後，透過該出光部424射出。該場發射像素管400可用來組裝具有較高解析度之大型戶外彩色顯示器。 When the field emission pixel tube 400 is operated, a voltage is applied between the first anode 411, the second anode 412, and the third anode 413 and the cathode 404 to form an electric field, and the first electron emitter 407 is caused by an electric field. The second electron emitter 408 and the third electron emitter 409 emit electrons, and the emitted electrons reach the first anode 411, the second anode 412, and the third anode 413, respectively bombarding the first anode 411, the second anode 412, and the third The phosphor layer 410 on the anode 413 emits visible light. Among them, part of the visible light is directly transmitted through the light exit portion 424, and the other portion of the visible light is reflected by the end surface 420 and then transmitted through the light exit portion 424. The field emission pixel tube 400 can be used to assemble a large outdoor color display with higher resolution.

相對於先前技術，本發明採用奈米碳管管狀結構作為電子發射體，使得電子發射體之機械強度及散熱效率得到提高，且該奈米碳管管狀結構包括複數突出之環狀排列之電子發射尖端，可有效降低該電子發射體之電場屏蔽效應，獲得具有較大密度之場發射電流。所述場發射單元可用於組裝照明設備或顯示設備。 Compared with the prior art, the present invention adopts a tubular structure of a carbon nanotube as an electron emitter, so that the mechanical strength and heat dissipation efficiency of the electron emitter are improved, and the tubular structure of the carbon nanotube includes a plurality of protruding and arranged electron emission in a ring shape. The tip can effectively reduce the electric field shielding effect of the electron emitter and obtain a field emission current with a large density. The field emission unit can be used to assemble a lighting device or a display device.

綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

101‧‧‧電子發射尖端 101‧‧‧Electronic emission tip

103‧‧‧第一端 103‧‧‧ first end

105‧‧‧第二端 105‧‧‧second end

107‧‧‧開口 107‧‧‧ openings

108‧‧‧電子發射體 108‧‧‧Electronic emitters

126‧‧‧電子發射部 126‧‧‧Electronic Launch Department

Claims (19)

一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體；其改良在於，所述至少一電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構之一端與所述陰極支撐體電連接，所述奈米碳管管狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，所述奈米碳管管狀結構為複數奈米碳管圍繞一中空之線狀軸心組成，所述奈米碳管管狀結構在電子發射端延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter; and the improvement is that the at least one electron emitter comprises a carbon nanotube tubular structure, the nanocarbon One end of the tubular structure is electrically connected to the cathode support, and the other end of the tubular structure of the carbon nanotube extends toward the anode as an electron emission end of an electron emitter, and the tubular structure of the carbon nanotube is a complex The carbon nanotubes are formed around a hollow linear axis extending from the electron emission tip at the electron emission end. 如請求項第1項所述的場發射像素管，其中，所述奈米碳管管狀結構中大多數奈米碳管通過凡得瓦力首尾相連並圍繞中空之線狀軸心螺旋延伸。 The field emission pixel tube of claim 1, wherein the majority of the carbon nanotubes in the tubular structure of the carbon nanotubes are connected end to end by a van der Waals force and spirally extend around the hollow axis of the hollow. 如請求項第2項所述的場發射像素管，其中，所述奈米碳管管狀結構中大多數奈米碳管之螺旋方向與所述線狀軸心之長度方向形成一定之交叉角α，且0°<α≦90°。 The field emission pixel tube of claim 2, wherein a spiral direction of a plurality of carbon nanotubes in the tubular structure of the carbon nanotube forms a certain crossing angle with a length direction of the linear axis And 0 ° < α ≦ 90 °. 如請求項第1項所述的場發射像素管，其中，在所述電子發射體之電子發射端，所述奈米碳管管狀結構具有一類圓錐形之電子發射部。 The field emission pixel tube of claim 1, wherein the carbon nanotube tubular structure has a conical electron emitting portion at an electron emission end of the electron emitter. 如請求項第1項所述的場發射像素管，其中，所述奈米碳管管狀結構之電子發射部之末端具有一開口，所述奈米碳管管狀結構從開口處延伸出複數奈米碳管束作為複數電子發射尖端。 The field emission pixel tube of claim 1, wherein an electron emission portion of the tubular structure of the carbon nanotube has an opening, and the tubular structure of the carbon nanotube extends from the opening to a plurality of nanometers. The carbon tube bundle acts as a complex electron emission tip. 如請求項第5項所述的場發射像素管，其中，所述開口之直徑為4微米至6微米。 The field emission pixel tube of claim 5, wherein the opening has a diameter of from 4 micrometers to 6 micrometers. 如請求項第5項所述的場發射像素管，其中，所述複數電子發射尖端圍繞所述線狀軸心呈環狀排列，且向所述陽極延伸。 The field emission pixel tube of claim 5, wherein the plurality of electron emission tips are arranged in a ring shape around the linear axis and extend toward the anode. 如請求項第7項所述的場發射像素管，其中，所述複數電子發射尖端之延伸方向逐漸遠離所述線狀軸心。 The field emission pixel tube of claim 7, wherein the extension direction of the plurality of electron emission tips is gradually away from the linear axis. 如請求項第5項所述的場發射像素管，其中，所述每一電子發射尖端包括複數基本平行之奈米碳管，每一電子發射尖端之中心處突出有一根奈米碳管。 The field emission pixel tube of claim 5, wherein each of the electron emission tips comprises a plurality of substantially parallel carbon nanotubes, and a carbon nanotube is protruded from a center of each electron emission tip. 如請求項第9項所述的場發射像素管，其中，所述相鄰之電子發射尖端中突出之奈米碳管之間之距離為0.1微米~2微米。 The field emission pixel tube of claim 9, wherein a distance between the protruding carbon nanotubes in the adjacent electron emission tips is 0.1 micrometers to 2 micrometers. 如請求項第9項所述的場發射像素管，其中，所述複數電子發射尖端中，相鄰的二電子發射尖端中突出的奈米碳管之間的間距與突出的奈米碳管直徑的比值為20：1至500：1。 The field emission pixel tube of claim 9, wherein a spacing between the protruding carbon nanotubes in the adjacent two electron emission tips and the protruding carbon nanotube diameter in the plurality of electron emission tips The ratio is 20:1 to 500:1. 如請求項第1項所述的場發射像素管，其中，所述電子發射體進一步包括一線狀支撐體設置於所述奈米碳管管狀結構之中空之線狀軸心處。 The field emission pixel tube of claim 1, wherein the electron emitter further comprises a linear support disposed at a hollow linear axis of the tubular structure of the carbon nanotube. 如請求項第11項所述的場發射像素管，其中，所述線狀支撐體為導電體。 The field emission pixel tube of claim 11, wherein the linear support is an electrical conductor. 如請求項第12項所述的場發射像素管，其中，所述奈米碳管管狀結構通過所述線狀支撐體支撐並與所述陰極支撐體電連接。 The field emission pixel tube of claim 12, wherein the carbon nanotube tubular structure is supported by the linear support and electrically connected to the cathode support. 如請求項第1項所述的場發射像素管，其中，所述陰極包括複數電子發射體相互間隔設置並與所述陰極支撐體電連接。 The field emission pixel tube of claim 1, wherein the cathode comprises a plurality of electron emitters spaced apart from each other and electrically connected to the cathode support. 如請求項第1項所述的場發射像素管，其中，所述場發射像素管進一步包括一柵極設置於陰極與陽極之間，且與所述陰極及所述陽極分別間隔設置。 The field emission pixel tube of claim 1, wherein the field emission pixel tube further comprises a gate disposed between the cathode and the anode, and spaced apart from the cathode and the anode, respectively. 如請求項第1項所述的場發射像素管，其中，所述場發射像素管進一步包括一位於殼體內之吸氣劑。 The field emission pixel tube of claim 1, wherein the field emission pixel tube further comprises a getter located in the housing. 一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體，其改良在於，所述至少一電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構之一端與所述陰極支撐體電連接，所述奈米碳管管狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，在所述電子發射端，所述奈米碳管管狀結構具有一開口，所述奈米碳管管狀結構從開口處延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter, and the improvement is that the at least one electron emitter comprises a carbon nanotube tubular structure, the nanocarbon One end of the tubular tubular structure is electrically connected to the cathode support, and the other end of the tubular structure of the carbon nanotube extends toward the anode as an electron emission end of an electron emitter, and at the electron emission end, the nanometer The carbon tube tubular structure has an opening, and the carbon nanotube tubular structure extends from the opening to a plurality of electron-emitting tips. 一種場發射像素管，其包括：一殼體，所述殼體具有一出光部；一螢光粉層及一陽極，所述陽極及螢光粉層設置於所述殼體出光部；一陰極，所述陰極與所述陽極間隔設置，該陰極包括一陰極支撐體與至少一電子發射體； 其改良在於，所述至少一電子發射體包括一線狀支撐體及一奈米碳管管狀結構設置於所述線狀支撐體表面組成一奈米碳管複合線狀結構，所述奈米碳管複合線狀結構之一端與所述陰極支撐體電連接，所述奈米碳管複合線狀結構之另一端向所述陽極延伸作為電子發射體之電子發射端，所述奈米碳管管狀結構具有一開口，所述奈米碳管管狀結構從開口處延伸出複數電子發射尖端。 A field emission pixel tube includes: a housing having a light exiting portion; a phosphor layer and an anode; the anode and the phosphor layer disposed on the housing light exit portion; a cathode The cathode is spaced apart from the anode, the cathode includes a cathode support and at least one electron emitter; The improvement is that the at least one electron emitter comprises a linear support body and a carbon nanotube tubular structure disposed on the surface of the linear support body to form a carbon nanotube composite linear structure, the carbon nanotube One end of the composite linear structure is electrically connected to the cathode support, and the other end of the carbon nanotube composite linear structure extends toward the anode as an electron emission end of the electron emitter, and the carbon nanotube tubular structure There is an opening, and the carbon nanotube tubular structure extends from the opening to the plurality of electron-emitting tips.