TW200905714A - Field emission pixel tube - Google Patents

Field emission pixel tube Download PDF

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Publication number
TW200905714A
TW200905714A TW96126538A TW96126538A TW200905714A TW 200905714 A TW200905714 A TW 200905714A TW 96126538 A TW96126538 A TW 96126538A TW 96126538 A TW96126538 A TW 96126538A TW 200905714 A TW200905714 A TW 200905714A
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TW
Taiwan
Prior art keywords
field emission
emission pixel
pixel tube
tube
casing
Prior art date
Application number
TW96126538A
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Chinese (zh)
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TWI394195B (en
Inventor
Yuan-Chao Yang
Liang Liu
Kai-Li Jiang
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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Priority to TW96126538A priority Critical patent/TWI394195B/en
Publication of TW200905714A publication Critical patent/TW200905714A/en
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Publication of TWI394195B publication Critical patent/TWI394195B/en

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Abstract

The present invention relates to a field emission pixel tube. The field emission pixel tube includes a shell, an anode and a cathode disposed on two ends of the shell respectively. The cathode includes a carbon nanotube yarn. The field emission pixel tube further includes a shielding electrode disposed adjacent to the shell and around the carbon nanotube yarn. The shielding electrode can reduce an electric field density on a surface of the carbon nanotube yarn, as a result, the carbon nanotube yarn can emit electron at a high voltage and a low current.

Description

200905714 九、發明說明: 【發明所屬之技術領域】 尤其涉及一種場發射像 本發明涉及一種場發射元件 素管。 【先前技術】 場發射電子源以及利用該電 之場發射發光技術已經於場發射平::瓦先物質而發光 用。這種場發射技術係於真空環境 …于1應 將尖端之電子激發出來。於傳统;用外加電場作用 用微細尖侧目尖端、=中:-般採 技術之發展,還採用奈米碳管作為電子發射:。,F"者奈米 .舞米碳管線(CNT yarn)具右 ' 較低之陽極電壓下具有較大之發射之=發射性能,於 場發射像素管中卻為缺點。因概,然而這—優點於 係電子轟擊螢光粉發光,而鸯光::::素管之工作原理 壓、小電流。於低電壓、大電、、* 取土工作條件為高電 电Λ丨L之γ冬J/L· —r- 螢光粉之發光效率和壽命。 /、 作會嚴重降低 有繁於此’有必要提供—種可於古命… 下工作之奈米碳管線場發射像素管。、Ν兒壓、小電流條件 【發明内容】 以下將以實施例說明一種可於言兩 工作之奈米碳管線場發射像素管。、阿私堅、小電流條件下 200905714 一種場發射像素管,其包括殼體、分別設置於殼體兩 ‘端之陽極與陰極,該陰極包括奈米碳管線,該場發射像素 管還包括屏蔽極,該屏蔽極環繞該奈米碳管線設置。 該場發射像素管於工作時,陰極與屏蔽極上接低電 位,陽極接高電位。由於屏蔽極可屏蔽陽極之高壓,其可 顯著降低奈米碳管線表面之電場強度,場發射像素管之直 徑越小,則這種屏蔽效應越明顯。由於奈米碳管線表面之 電場強度較低,因此其發射電流降低,但其工作電壓卻很 高。符合場發射像素管之理想工作條件,具有良好之發射 效果與長使用壽命。 【實施方式】 參閱圖1,第一實施例之場發射像素管100包括殼體 10、陰極11、陽極12、螢光層13及屏蔽極14。 殼體10具有一出光部102。殼體10由絕緣材料如石 英、玻璃、陶瓷、塑膠等製成。其可為中空之圓柱體、長 k 方體、立方體、多棱柱體等。出光部102之光出射面可為 平面也可為對光線具發散或會聚作用之曲面。殼體10内被 抽成真空狀態。優選地,為使殼體10内之真空度得以保持, 可於殼體10内添加吸氣劑(圖未示),如蒸散型吸氣劑金 屬膜。吸氣劑可採用蒸鍍之方式於殼體密封前形成於殼體 10之内壁上。 陰極11與陽極12位於殼體10内,並相對設置於殼體 10之兩端。其中陽極設置於靠近殼體10出光部102之一 7 200905714 石山l 1包括支掠體in及設置於支㈣lu上之奈米 反U 112,支撐體lu 一端位於殼體1〇内,另一端延伸 至殼體H)外,用料接電源(圖未示) =支:體⑴位於殼體内之-端上。支撐二為導 體m為奈米碳管線112提供支樓並將奈米 反s線112電連接到電源上。 “奈米碳管線m可包括多根相互之間基 石反官’奈米碳管可為單壁奈米碳管或多壁奈米石户其。= 也可以採用奈米碳管膠線結構。多二=&田’、、、 瓦爾力連接於一起。太平石山〜二不未石反官之間靠凡得 10毫乎吉,未反官線112之長度可為〇.!毫米至 0毛未’直徑可為】微米至!毫米。奈米 通過導電膠如㈣㈣於支撐體m i 線112熔接於古俨髀1 L 有將不未石反g 樓體山上, 將奈米碳管線112連接到支 :11上之河,可將奈米碳管線m浸泡於溶劑如乙醇 於真空中通電流進行熱處理,使溶劑抑。細過 強,理之奈米碳管線112之導電性及機械強度都祕 =12可為透明導電薄膜如氧化姻錫薄膜或電子易於 勞:=3銘膜。當陽極12採用透明導電薄臈時: 12r : °又置於除極12面向陰極11之-側上。者陽桎 12採用電子易於穿透之導電薄膜時,螢光層13可心%極 體^内壁上’或者設置於陽極12背離陰極u之::威 ===殼體10之間。本實施心,陽極 、螢先層13汉置於陽極12背離陰極21之—側上。 8 200905714 螢光層可為白色螢光粉或彩色螢光粉如紅色螢光粉、藍色 營光粉或綠色螢光粉。 本實施例當中,屏蔽極14為環狀電極,其可粘接於殼 體10之外壁,並且環繞奈米碳管線112發射出之電子之飛 行路徑設置。於外加電場之作用下,奈米碳管線Π2發射 之電子從陰極11飛向陽極12並穿透陽極12轟擊螢光層 13,使螢光層13發光。即電子之飛行方向大體沿殼體之中 心轴之方向前進。因此屏蔽極14環繞殼體10之中心軸設 置即可,優選地,屏蔽極14與殼體10形狀一致,且與殼 體10同軸設置。 請參閱圖2,第二實施例之場發射像素管200與第一實 施例之場發射像素管100相似,不同之處在於,屏蔽極24 為設置於殼體20内壁或外壁上之筒狀導電薄膜。屏蔽極24 可由金、銀、銅或銘等導電率高之金屬形成。優選地,屏 蔽極’24為金膜。屏蔽極24可以採用濺鍍或蒸鍍之方法形 成。當屏蔽極24設置於殼體20内壁上時,須於殼體20封 閉之前形成。 以上各實施例之場發射像素管於工作時,陰極與屏蔽 極上接低電位,陽極接高電位。由於屏蔽極可以屏蔽陽極 之高壓,其可以顯著降低奈米碳管線表面之電場強度,場 發射像素管之直徑越小,由於屏蔽極離陰極之距離越近, 這種屏蔽效應越明顯。由於奈米碳管線表面之電場強度較 低,因此其發射電流降低,但其工作電壓卻很高。符合場 發射像素管之理想工作條件,具有良好之發射效果與較長 9 200905714 之使用壽命。 另外’由於屏蔽極與陰 米碳管線發射出之電子且右轴免^低電位,屏敗極對於奈 奈米碳管線設置,其對電子 用’且由於屏蔽極環繞 电 斥作用使奈米碳管線發射 出之電子束更加集中的飛向陽極, 壁,從而提高電子之利用率^向设體1〇之内 生\射線。 科叫可避免於殼體内壁上產 提出:本發明確已符合發明專利之要件,遂依法 。惟’以上所述者僅為本發明之較佳實施方 祜蓺夕A丄〆 料木之申明專利範圍。舉凡熟悉本案 士援依本發明之精神所作之等效修飾或變化,皆 應涵盍於以下申請專利範圍内。 【圖式簡罩說明】 圖1係第-實施例之場發射像素管結構之刮面示意圖。 圖2係第二實施例之場發射像素管結構之剖面示意圖。 【主要元件符號說明 ] 陰極 11 陽極 12 螢光層 13 屏蔽極 14,24 殼體 10,20 場發射像素管 100 出光部 102 111 200905714 支撐體 11200905714 IX. Description of the invention: [Technical field to which the invention pertains] In particular, the invention relates to a field emission element tube. [Prior Art] The field emission electron source and the field emission illuminating technology using the electric field have been used to emit light in the field: watt first material and illuminate. This field emission technique is in a vacuum environment...1 should excite the electrons at the tip. In the past; using an external electric field to use the tip of the fine tip, the medium: the development of the technology, the use of carbon nanotubes as electron emission:. , F" Nano. The CNT yarn has a right 'lower anode voltage with a larger emission = emission performance, which is a disadvantage in field emission pixel tubes. Because of this, however, this is advantageous in that the electron bombardment of the fluorescent powder is emitted, and the working principle of the light::::the tube is pressed and the current is small. The working conditions of low voltage, large electricity, and * are high luminous efficiency and lifetime of γ winter J/L·-r-fluorescent powder. /, will be seriously reduced. There is a need to provide a kind of nano-carbon pipeline field emission pixel tube that can work under the ancient life. Ν Ν 、 、 、 、 、 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 200905714 A field emission pixel tube comprising a housing, an anode and a cathode respectively disposed at two ends of the housing, the cathode comprising a nano carbon pipeline, the field emission pixel tube further comprising a shield The pole is disposed around the nanocarbon line. When the field emission pixel tube is in operation, the cathode and the shield electrode are connected to a low potential, and the anode is connected to a high potential. Since the shield can shield the high voltage of the anode, it can significantly reduce the electric field strength on the surface of the nanocarbon pipeline. The smaller the diameter of the field emission pixel tube, the more obvious the shielding effect. Due to the low electric field strength of the surface of the nanocarbon pipeline, its emission current is reduced, but its operating voltage is very high. It meets the ideal working conditions of the field emission pixel tube and has good emission effect and long service life. [Embodiment] Referring to Fig. 1, a field emission pixel tube 100 of a first embodiment includes a housing 10, a cathode 11, an anode 12, a phosphor layer 13, and a shield electrode 14. The housing 10 has a light exit portion 102. The casing 10 is made of an insulating material such as quartz, glass, ceramic, plastic or the like. It may be a hollow cylinder, a long k square, a cube, a polygonal prism, or the like. The light exit surface of the light exiting portion 102 may be a flat surface or a curved surface that diverges or converges on the light. The inside of the casing 10 is evacuated. Preferably, in order to maintain the degree of vacuum in the casing 10, a getter (not shown) such as an evapotranspiration getter metal film may be added to the casing 10. The getter may be formed on the inner wall of the casing 10 by vapor deposition before the casing is sealed. The cathode 11 and the anode 12 are located inside the casing 10 and are oppositely disposed at both ends of the casing 10. The anode is disposed adjacent to one of the light exiting portions 102 of the casing 10. 200905714 The rocky mountain 1 includes a ram body in and a nano-anti-U 112 disposed on the branch (four) lu. One end of the support body lu is located in the casing 1 and extends at the other end. Outside the housing H), the power supply (not shown) = support: the body (1) is located at the end of the housing. The support two is a conductor m that provides a branch for the nanocarbon line 112 and electrically connects the nano anti-s line 112 to the power source. "Nano carbon pipeline m can include multiple basestones between each other'. The carbon nanotubes can be single-walled carbon nanotubes or multi-walled nano-stones. = It is also possible to use a carbon nanotube glue line structure. More than two = & Tian ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The hair is not 'diameter' can be micron to! mm. The nanometer is welded to the support mi line 112 through the conductive adhesive such as (4) (4) on the support mi line 112 to the ancient 俨髀1 L. There will be no stone anti-g building on the mountain, connecting the nano carbon line 112 To the branch: the river on the 11th, the nano carbon line m can be immersed in a solvent such as ethanol in a vacuum to heat treatment, so that the solvent is too strong, and the conductivity and mechanical strength of the nano carbon line 112 are both Secret = 12 can be a transparent conductive film such as oxidized tin film or electrons easy to work: = 3 Ming film. When the anode 12 uses a transparent conductive thin :: 12r: ° is placed on the side of the depolarizer 12 facing the cathode 11. When the anode 11 is made of an electron-transparent conductive film, the phosphor layer 13 can be on the inner wall of the body or the anode 1 2 away from the cathode u:: Wei == = between the shells 10. In this embodiment, the anode, the first layer of the fluorescent layer 13 is placed on the side of the anode 12 away from the cathode 21. 8 200905714 The fluorescent layer can be white fluorescent Powder or color fluorescent powder such as red fluorescent powder, blue camping powder or green fluorescent powder. In the present embodiment, the shielding electrode 14 is a ring-shaped electrode which can be bonded to the outer wall of the casing 10 and surrounds the naphthalene The flight path of the electrons emitted by the carbon carbon line 112. Under the action of the applied electric field, the electrons emitted by the nanocarbon line Π2 fly from the cathode 11 to the anode 12 and penetrate the anode 12 to bombard the phosphor layer 13, so that the phosphor layer 13 illuminating, that is, the direction of flight of the electrons generally proceeds in the direction of the central axis of the casing. Therefore, the shield pole 14 is disposed around the central axis of the casing 10. Preferably, the shield pole 14 conforms to the shape of the casing 10, and the casing The body 10 is coaxially disposed. Referring to FIG. 2, the field emission pixel tube 200 of the second embodiment is similar to the field emission pixel tube 100 of the first embodiment, except that the shield electrode 24 is disposed on the inner or outer wall of the housing 20. a tubular conductive film on the top. The shield electrode 24 can be made of gold, silver or copper. Or a high conductivity metal is formed. Preferably, the shield electrode '24 is a gold film. The shield electrode 24 can be formed by sputtering or evaporation. When the shield electrode 24 is disposed on the inner wall of the casing 20, it must be The casing 20 is formed before the casing 20 is closed. When the field emission pixel tube of the above embodiments is in operation, the cathode and the shielding pole are connected to a low potential, and the anode is connected to a high potential. Since the shielding pole can shield the anode from the high voltage, the nano carbon pipeline can be significantly reduced. The electric field strength of the surface, the smaller the diameter of the field emission pixel tube, the closer the shielding effect is to the cathode. The shielding effect is more obvious. Because the electric field strength of the surface of the nanocarbon pipeline is lower, the emission current is lower, but the emission current is lower. Its working voltage is very high. It meets the ideal working conditions of the field emission pixel tube, and has a good emission effect and a long service life of 9 200905714. In addition, due to the electrons emitted from the shield pole and the cathode carbon line and the right axis is free of low potential, the screen is pole-set for the carbon nanotubes, which is used for electronic use and because of the shielding pole surrounding the repulsion to make the nano carbon pipeline The emitted electron beam is more concentrated toward the anode and the wall, thereby improving the utilization of the electrons. The name can be avoided on the inner wall of the casing. The invention has indeed met the requirements of the invention patent, and is legal. However, the above description is only the preferred embodiment of the present invention. Equivalent modifications or variations made by the applicant in accordance with the spirit of the invention are intended to be within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a scraping surface of a field emission pixel tube structure of a first embodiment. 2 is a cross-sectional view showing the structure of a field emission pixel tube of the second embodiment. [Main component symbol description] Cathode 11 Anode 12 Fluorescent layer 13 Shielding pole 14,24 Housing 10,20 Field emission pixel tube 100 Light exiting part 102 111 200905714 Supporting body 11

Claims (1)

200905714 十申凊專利範圍: •之陽極射像素官,其包括殼體、分別設置於殼體兩端 光陰極,該陰極包括奈米碳管線,該殼體一端設置 發射像素管還包括严置’其改進在於,該場 置於殼體表面^ 該屏蔽極環繞該奈米碳管線設 2尸\如/請專㈣圍第1項所狀場發射像素管,並中,該 屏敝極為環狀電極。 ϋ申,專利範圍第1項所述之場發射像素管,其中,該 屏敗極為導電薄膜。 要求第3項所述之場發射像素管,其中,該導電 涛膜為金Hy、^ρ臨· 犋銀膜、銅膜或鋁膜。 5中,如=#專則®^ 2或3賴叙場發射像素管,其 該屏敝極與該殼體同軸設置。 6_如申請專利範圍第”所述之場發射像素 中 L屏敝極設置於該殼體内表面或外表面上。 、中 專利範圍帛1項所述之場發射像素管,其中,該 包括支撐體,該奈米碳管線設置於該支撐體上 8太如申請專利範圍第7項所述之場發射像素管,复中,該 “===_導電膠枯接或者該奈米破 利範圍第1項所述之場發射像素管,其中,該 丁 /、反S線之長度為01毫米至1〇毫米。 10·如申請專利範圍第i項所述之場發射像素管,其中, 12 200905714 該奈米碳管線之直徑為i微米至1毫米。 13200905714 The scope of the patent application: • The anode of the pixel projector, comprising a housing, respectively disposed at the photocathode at both ends of the housing, the cathode comprising a carbon nanotube line, the housing is provided with a transmitting pixel tube at one end and includes a strict ' The improvement is that the field is placed on the surface of the casing. The shielding pole is arranged around the nano carbon pipeline, and the field emission pixel tube of the first item is surrounded by the first item. electrode. The field emission pixel tube of the first aspect of the patent, wherein the screen is extremely conductive film. The field emission pixel tube according to Item 3 is claimed, wherein the conductive film is a gold Hy, a ρ 临 犋 silver film, a copper film or an aluminum film. In 5, for example, the =#Special®^2 or 3 ray field emission pixel tube, the screen drain is coaxially disposed with the housing. 6_ The field emission pixel of the field emission pixel according to the invention is provided on the inner surface or the outer surface of the casing, wherein the field emission pixel tube of the above-mentioned patent scope, wherein the a support body, the nano carbon line is disposed on the support body 8 as in the field emission pixel tube described in claim 7 of the patent application, in the middle, the "===_ conductive adhesive is dead or the nanometer is broken The field emission pixel tube of item 1, wherein the length of the D/S line is from 01 mm to 1 mm. 10. The field emission pixel tube of claim i, wherein 12 200905714 the diameter of the nano carbon line is from i micrometer to 1 millimeter. 13
TW96126538A 2007-07-20 2007-07-20 Field emission pixel tube TWI394195B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111293016A (en) * 2020-03-20 2020-06-16 西门子爱克斯射线真空技术(无锡)有限公司 X-ray tube and X-ray imaging apparatus

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* Cited by examiner, † Cited by third party
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JP3494583B2 (en) * 1999-01-13 2004-02-09 松下電器産業株式会社 Method for manufacturing electron-emitting device
TW480537B (en) * 2001-01-19 2002-03-21 Ind Tech Res Inst Method for enhancing emission efficiency of carbon nanotube emission source field
CN100419943C (en) * 2003-04-03 2008-09-17 清华大学 Field emission display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111293016A (en) * 2020-03-20 2020-06-16 西门子爱克斯射线真空技术(无锡)有限公司 X-ray tube and X-ray imaging apparatus
CN111293016B (en) * 2020-03-20 2023-03-14 西门子爱克斯射线真空技术(无锡)有限公司 X-ray tube and X-ray imaging apparatus

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