TWI417924B - Field emission electronic device - Google Patents

Field emission electronic device Download PDF

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TWI417924B
TWI417924B TW99146180A TW99146180A TWI417924B TW I417924 B TWI417924 B TW I417924B TW 99146180 A TW99146180 A TW 99146180A TW 99146180 A TW99146180 A TW 99146180A TW I417924 B TWI417924 B TW I417924B
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carbon nanotube
electron
tubular structure
electrode
cathode
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TW99146180A
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TW201227791A (en
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Yang Wei
Peng Liu
Hai-Yan Hao
Shou-Shan Fan
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Hon Hai Prec Ind Co Ltd
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場發射電子器件 Field emission electronics

本發明涉及一種場發射電子器件，尤其涉及一種應用奈米碳管作為電子發射體的場發射電子器件。 The present invention relates to a field emission electronic device, and more particularly to a field emission electronic device using a carbon nanotube as an electron emitter.

場發射電子器件在低溫或者室溫下工作，與電真空器件中的熱發射電子器件相比具有功耗低、回應速度快及低放氣等優點，因此用場發射電子器件有望替代電真空器件中的熱發射電子器件。 Field-emitting electronic devices operate at low temperatures or room temperature, and have the advantages of low power consumption, fast response speed, and low bleed air compared with thermal-emitting electronic devices in electric vacuum devices. Therefore, field emission electronic devices are expected to replace electric vacuum devices. Thermal emission electronics in the middle.

奈米碳管(Carbon Nanotube,CNT)係一種新型碳材料，由日本研究人員Iijima在1991年發現，請參見"Helical Microtubules of Graphitic Carbon",S.Iijima,Nature,vol.354,p56(1991)。奈米碳管具有極優異的導電性能、良好的化學穩定性及大的長徑比，且其具有幾乎接近理論極限的尖端表面積(尖端表面積越小，其局部電場越集中)，因而奈米碳管在場發射領域具有潛在的應用前景。目前的研究表明，奈米碳管係已知的最好的場發射材料之一，他的尖端尺寸只有幾奈米至幾十奈米，具有低的開啟電壓，可傳輸極大的電流密度，並且電流穩定，使用壽命長，因而非常適合作為一種極佳的點電子源，應用在場發射電子器件中作為電子發射體。 Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher Iijima in 1991. See "Helical Microtubules of Graphitic Carbon", S. Iijima, Nature, vol. 354, p56 (1991) . The carbon nanotubes have excellent electrical conductivity, good chemical stability and large aspect ratio, and have a tip surface area close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field), thus the nanocarbon The tube has potential application prospects in the field of field emission. Current research shows that one of the best field emission materials known for the carbon nanotube system, his tip size is only a few nanometers to tens of nanometers, has a low turn-on voltage, can transmit a very large current density, and The current is stable and the service life is long, so it is very suitable as an excellent point electron source for use as an electron emitter in field emission electronic devices.

傳統的場發射電子器件的電子發射體包括一奈米碳管長線。該奈 米碳管長線具有一第一端及與第一端相對的第二端，該奈米碳管長線的第一端可與一陰極電極電連接，該奈米碳管長線的第二端從陰極電極向外延伸。所述奈米碳管長線的第二端用做電子發射端。然而，所述奈米碳管長線的製備方法為將一較長的奈米碳管線機械切割後獲得，因此，奈米碳管長線的電子發射端為平齊結構。該種平齊結構的電子發射端的場增強因子較小，且電子發射端處複數奈米碳管緊密結合在一起，相互之間存在電場屏蔽效應，所以該種電子發射體的電子發射能力較差，導致該場發射器件的場發射能力較差。 The electron emitter of a conventional field emission electronic device includes a long carbon nanotube line. The nai The long carbon nanotube has a first end and a second end opposite to the first end, the first end of the long carbon nanotube may be electrically connected to a cathode electrode, and the second end of the long carbon nanotube is from the cathode The electrodes extend outward. The second end of the long carbon nanotube line is used as an electron-emitting end. However, the preparation method of the nano carbon tube long line is obtained by mechanically cutting a long nano carbon line, and therefore, the electron emission end of the long carbon nanotube line is flush. The electron emission end of the flush structure has a small field enhancement factor, and the plurality of carbon nanotubes at the electron emission end are closely combined, and there is an electric field shielding effect between each other, so the electron emission capability of the electron emitter is poor. The field emission capability of the field emission device is poor.

有鑑於此，提供一種具有較佳電子發射能力的場發射電子器件實為必要。 In view of this, it is necessary to provide a field emission electronic device having a better electron emission capability.

一種場發射電子器件，其包括：一絕緣基板；複數行電極間隔設置於所述絕緣基板的表面；複數陰極發射體設置於所述行電極表面，且呈矩陣狀分佈；一隔離層；複數列電極設置於該隔離層的表面，該複數列電極通過所述隔離層支撐且與所述行電極絕緣；一陽極裝置，該陽極裝置包括一陽極玻璃基板、一陽極電極及所述複數螢光粉區域，所述螢光粉區域對應於所述行電極及所述列電極相交叉的位置；所述複數陰極發射體中的每個陰極發射體均包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述行電極電連接，所述奈米碳管管狀結構的另一端向所述陽極延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈 米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a plurality of row electrodes are spaced apart from a surface of the insulating substrate; a plurality of cathode emitters are disposed on the surface of the row electrode and distributed in a matrix; an isolation layer; a plurality of columns An electrode is disposed on a surface of the isolation layer, the plurality of columns are supported by the isolation layer and insulated from the row electrode; and an anode device includes an anode glass substrate, an anode electrode, and the plurality of phosphors a region, wherein the phosphor powder region corresponds to a position at which the row electrode and the column electrode intersect; each of the plurality of cathode emitters includes at least one electron emitter, the electron emitter Including a carbon nanotube tubular structure, one end of the tubular structure of the carbon nanotube is electrically connected to the row electrode, and the other end of the tubular structure of the carbon nanotube extends toward the anode as an electron emission electron emitter End, the tubular structure of the carbon nanotube has a hollow linear axis, the nai The carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the carbon nanotube tubular structure extends at a plurality of electron emission tips along one end of the linear axis.

一種場發射電子器件，其包括：一絕緣基板；複數行電極與列電極分別平行且等間隔設置於所述絕緣基板上，該複數行電極與該複數列電極相互交叉設置，每二相鄰的所述行電極與二相鄰的所述列電極形成一網格，所述行電極與所述列電極之間電絕緣；複數電子發射單元，每個電子發射單元對應一網格設置，所述每個電子發射單元進一步包括間隔設置的一陰極電極與一陽極電極，且該陽極電極及陰極電極分別與上述行電極與上述列電極電連接，及一陰極發射體，該陰極發射體與陰極電極電連接；所述陰極發射體包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述陰極電極電連接，所述奈米碳管管狀結構的另一端向所述陽極電極延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device includes: an insulating substrate; a plurality of row electrodes and column electrodes are respectively disposed in parallel and equally spaced on the insulating substrate, and the plurality of row electrodes and the plurality of column electrodes are disposed to cross each other, each adjacent to each other The row electrode and the two adjacent column electrodes form a grid, and the row electrode and the column electrode are electrically insulated; a plurality of electron emission units, each electron emission unit corresponding to a grid, Each of the electron-emitting units further includes a cathode electrode and an anode electrode, and the anode electrode and the cathode electrode are electrically connected to the row electrode and the column electrode, respectively, and a cathode emitter, the cathode emitter and the cathode electrode Electrically connecting; the cathode emitter comprises at least one electron emitter, the electron emitter comprises a carbon nanotube tubular structure, one end of the tubular structure of the carbon nanotube is electrically connected to the cathode electrode, The other end of the tubular structure of the carbon nanotube extends toward the anode electrode as an electron-emitting end of the electron emitter, and the tubular structure of the carbon nanotube has a hollow a linear axis, the carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the carbon nanotube tubular structure extends a plurality of electrons along one end of the linear axis Launch the tip.

一種場發射電子器件，其包括：一絕緣基板；複數行電極與列電極分別平行且等間隔設置於所述絕緣基板上，該複數行電極與該複數列電極相互交叉設置，每二相鄰的所述行電極與二相鄰的所述列電極形成一網格，所述行電極與所述列電極之間電絕緣；複數電子發射單元，每個電子發射單元對應一網格設置，所述每個 電子發射單元進一步包括間隔設置的一陰極電極與一柵極電極，且該柵極電極及該陰極電極分別與上述行電極與上述列電極電連接，及一陰極發射體，該陰極發射體與所述陰極電極電連接；一陽極裝置，該陽極裝置包括一玻璃基板，一透明陽極及塗覆於透明陽極上的螢光粉層；所述陰極發射體均包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述陰極電極電連接，所述奈米碳管管狀結構的另一端向所述柵極電極延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device includes: an insulating substrate; a plurality of row electrodes and column electrodes are respectively disposed in parallel and equally spaced on the insulating substrate, and the plurality of row electrodes and the plurality of column electrodes are disposed to cross each other, each adjacent to each other The row electrode and the two adjacent column electrodes form a grid, and the row electrode and the column electrode are electrically insulated; a plurality of electron emission units, each electron emission unit corresponding to a grid, Each The electron emission unit further includes a cathode electrode and a gate electrode disposed at intervals, and the gate electrode and the cathode electrode are electrically connected to the row electrode and the column electrode, respectively, and a cathode emitter, the cathode emitter and the cathode The cathode electrode is electrically connected; an anode device comprising a glass substrate, a transparent anode and a phosphor powder layer coated on the transparent anode; the cathode emitters each comprising at least one electron emitter, the electron The emitter includes a carbon nanotube tubular structure, one end of the tubular structure of the carbon nanotube is electrically connected to the cathode electrode, and the other end of the tubular structure of the carbon nanotube extends toward the gate electrode as electron emission The electron-emitting end of the body, the tubular structure of the carbon nanotube has a hollow linear axis, and the tubular structure of the carbon nanotube is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, The carbon nanotube tubular structure extends along the one end of the linear axis to form a plurality of electron emission tips.

一種場發射電子器件，其包括：一絕緣基板；一陰極電極設置在所述絕緣基板表面，該陰極電極包括陰極電極及複數電子發射體與所述陰極電極電性連接；及一柵極，該柵極通過一隔離層與所述陰極電極間隔且電性絕緣設置，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述陰極電極電連接，所述奈米碳管管狀結構的另一端向所述柵極電極延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構的一端與所述陰極電極電性連接，所述奈米碳管管狀結構的另一端向所述柵極延伸並延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a cathode electrode disposed on a surface of the insulating substrate, the cathode electrode including a cathode electrode and a plurality of electron emitters electrically connected to the cathode electrode; and a gate The gate electrode is spaced apart from the cathode electrode by an isolation layer and electrically insulated, the electron emitter comprises a carbon nanotube tubular structure, and one end of the carbon nanotube tubular structure is electrically connected to the cathode electrode. The other end of the tubular structure of the carbon nanotube extends toward the gate electrode as an electron-emitting end of an electron emitter, the tubular structure of the carbon nanotube has a hollow linear axis, the carbon nanotube The tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, one end of the tubular structure of the carbon nanotube is electrically connected to the cathode electrode, and the other end of the tubular structure of the carbon nanotube The gate extends and extends out of the plurality of electron-emitting tips.

與先前技術相比，本發明提供的場發射電子器件具有以下優點： 其一，場發射電子器件中的電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端延伸出複數電子發射尖端，因此，可有效降低該電子發射體的電場屏蔽效應；其二，所述複數電子發射尖端的尖端狀可增強電子發射體的場增強因子，使電子發射體更易於發射電子，從而提高電子發射體的場發射性能；其三，所述電子發射體具有複數電子發射尖端，因此，電子發射體的電流密度較大，可適當減少場發射電子器件中的電子發射體的數量，使場發射電子器件更加易於製備。 Compared with the prior art, the field emission electronic device provided by the present invention has the following advantages: First, the electron emitter in the field emission electronic device comprises a tubular structure of a carbon nanotube, and one end of the tubular structure of the carbon nanotube extends a plurality of electron emission tips, thereby effectively reducing the electric field shielding of the electron emitter. Secondly, the tip of the complex electron emission tip can enhance the field enhancement factor of the electron emitter, making the electron emitter easier to emit electrons, thereby improving the field emission performance of the electron emitter; third, the electron emission The body has a plurality of electron emission tips. Therefore, the current density of the electron emitter is large, and the number of electron emitters in the field emission electronic device can be appropriately reduced, making the field emission electronic device easier to prepare.

10、20、218‧‧‧電子發射體 10, 20, 218‧‧‧ electron emitters

22、108‧‧‧電子發射部 22, 108‧‧‧Electronic Launch Department

24‧‧‧奈米碳管層 24‧‧‧Nanocarbon layer

26‧‧‧導電線狀結構 26‧‧‧Electrical wire structure

28、106‧‧‧電子發射尖端 28, 106‧‧‧Electronic emission tip

100a、100b、200、300‧‧‧場發射電子器件 100a, 100b, 200, 300‧‧‧ field emission electronics

102‧‧‧奈米碳管管狀結構的第一端 102‧‧‧ First end of the tubular structure of the carbon nanotube

104‧‧‧奈米碳管管狀結構的第二端 104‧‧‧The second end of the carbon nanotube tubular structure

110a、110b、202、302‧‧‧絕緣基板 110a, 110b, 202, 302‧‧‧ insulating substrate

111‧‧‧開口 111‧‧‧ openings

120a、120b、204、306‧‧‧行電極 120a, 120b, 204, 306‧‧‧ row electrodes

130a、130b、216‧‧‧隔離體 130a, 130b, 216‧‧ ‧ Isolation

140a、140b、206‧‧‧列電極 140a, 140b, 206‧‧‧ column electrodes

150a、150b、208、308‧‧‧陰極發射體 150a, 150b, 208, 308‧‧‧ cathode emitters

160a、160b‧‧‧陽極基板 160a, 160b‧‧‧ anode substrate

170a、170b‧‧‧通孔 170a, 170b‧‧‧through holes

180a、180b、210‧‧‧陽極電極 180a, 180b, 210‧‧‧ anode electrode

190a、190b、336‧‧‧螢光粉區域 190a, 190b, 336‧‧ ‧Flame powder area

212、312‧‧‧陰極電極 212, 312‧‧‧ cathode electrode

214‧‧‧網格 214‧‧‧Grid

220、320‧‧‧電子發射單元 220, 320‧‧‧Electronic emission unit

222‧‧‧電子發射端 222‧‧‧Electronic transmitter

310‧‧‧柵極電極 310‧‧‧ gate electrode

330‧‧‧陽極裝置 330‧‧‧Anode device

332‧‧‧玻璃基板 332‧‧‧ glass substrate

334‧‧‧透明陽極 334‧‧‧Transparent anode

第1圖係本發明第一實施例提供的場發射電子器件的剖視圖。 1 is a cross-sectional view of a field emission electronic device provided by a first embodiment of the present invention.

第2圖係本發明第一實施例提供的場發射電子器件的立體圖。 2 is a perspective view of a field emission electronic device provided by a first embodiment of the present invention.

第3圖係本發明第一實施例提供的場發射電子器件中的電子發射體的結構示意圖。 3 is a schematic structural view of an electron emitter in a field emission electronic device according to a first embodiment of the present invention.

第4圖係圖3中的電子發射體的掃描電鏡照片。 Figure 4 is a scanning electron micrograph of the electron emitter of Figure 3.

第5圖係圖3中的電子發射體的剖視圖。 Figure 5 is a cross-sectional view of the electron emitter of Figure 3.

第6圖係圖3中的電子發射體的電子發射部的掃描電鏡照片。 Fig. 6 is a scanning electron micrograph of the electron-emitting portion of the electron emitter in Fig. 3.

第7圖係圖3中的電子發射體的開口的掃描電鏡照片。 Fig. 7 is a scanning electron micrograph of the opening of the electron emitter in Fig. 3.

第8圖係圖3中的電子發射體的場發射尖端的透射電鏡照片。 Figure 8 is a transmission electron micrograph of the field emission tip of the electron emitter of Figure 3.

第9圖係圖3中的電子發射體的製備過程中的奈米碳管預製體的掃描電鏡照片。 Fig. 9 is a scanning electron micrograph of a carbon nanotube preform in the preparation process of the electron emitter in Fig. 3.

第10圖係本發明第一實施例提供的另一種電子發射體的剖視圖。 Figure 10 is a cross-sectional view showing another electron emitter provided by the first embodiment of the present invention.

第11圖係本發明第二實施例提供的場發射電子器件的剖視圖。 Figure 11 is a cross-sectional view showing a field emission electronic device according to a second embodiment of the present invention.

第12圖係本發明第二實施例提供的場發射電子器件的立體圖。 Figure 12 is a perspective view of a field emission electronic device provided by a second embodiment of the present invention.

第13圖係本發明第三實施例提供的場發射電子器件的俯視圖。 Figure 13 is a plan view of a field emission electronic device provided by a third embodiment of the present invention.

第14圖係本發明第三實施例提供的場發射電子器件的剖視圖。 Figure 14 is a cross-sectional view showing a field emission electronic device provided by a third embodiment of the present invention.

第15圖係本發明第四實施例提供的場發射電子器件的剖視圖。 Figure 15 is a cross-sectional view showing a field emission electronic device according to a fourth embodiment of the present invention.

以下將結合附圖詳細說明本發明實施例的電子發射體及電子發射元件。 Hereinafter, an electron emitter and an electron emitting element of an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

請參閱圖1及圖2，本發明第一實施例提供一種場發射電子器件100a，其包括一絕緣基板110a、複數行電極120a、一隔離層、複數列電極140a、複數陰極發射體150a、一陽極基板160a、一陽極電極180a及複數螢光粉區域190a。所述複數行電極120a相互平行且間隔設置於絕緣基板110a的表面。所述陰極發射體150a設置於所述行電極120a表面且與該行電極120a電連接。所述複數陰極發射體150a呈矩陣狀分佈。所述隔離層包括複數條形的相互平行且間隔設置的隔離體130a。所述複數隔離體130a與所述複數行電極120a相互垂直交叉設置，且所述複數隔離體130a覆蓋部份行電極120a。所述複數隔離體130a對應於複數陰極發射體150a的位置處形成有複數通孔170a。所述複數列電極140a通過所述隔離體130a支撐並與所述行電極120a電絕緣。所述列電極140a與及所述複數行電極120a相交叉的位置處形成有複數通孔170b，所述通孔170a與170b連通設置。所述陰極發射體150a設置於所述隔離體130a及 列電極140a的通孔170a與170b內，並與所述行電極120a電性連接。即所述陰極發射體150a位於複數行電極120a及複數列電極140a相交叉的位置。所述每個陰極發射體150a的位置與一螢光粉區域190a正對設置。即所述複數行電極120a及複數列電極140a相交叉的位置正對於一螢光粉區域190a。 Referring to FIG. 1 and FIG. 2, a first embodiment of the present invention provides a field emission electronic device 100a including an insulating substrate 110a, a plurality of row electrodes 120a, an isolation layer, a plurality of column electrodes 140a, a plurality of cathode emitters 150a, and a An anode substrate 160a, an anode electrode 180a, and a plurality of phosphor regions 190a. The plurality of row electrodes 120a are parallel to each other and spaced apart from each other on the surface of the insulating substrate 110a. The cathode emitter 150a is disposed on a surface of the row electrode 120a and electrically connected to the row electrode 120a. The plurality of cathode emitters 150a are distributed in a matrix. The spacer layer includes a plurality of strips of spacers 130a that are parallel to each other and spaced apart from each other. The plurality of spacers 130a and the plurality of row electrodes 120a are perpendicularly disposed to each other, and the plurality of spacers 130a cover a portion of the row electrodes 120a. The plurality of vias 170a are formed at positions corresponding to the plurality of cathode emitters 150a. The plurality of column electrodes 140a are supported by the spacers 130a and electrically insulated from the row electrodes 120a. The column electrode 140a is formed with a plurality of through holes 170b at positions crossing the plurality of row electrodes 120a, and the through holes 170a and 170b are disposed in communication with each other. The cathode emitter 150a is disposed on the separator 130a and The through holes 170a and 170b of the column electrode 140a are electrically connected to the row electrode 120a. That is, the cathode emitter 150a is located at a position where the plurality of row electrodes 120a and the plurality of column electrodes 140a intersect. The position of each of the cathode emitters 150a is disposed opposite to a phosphor particle region 190a. That is, the position where the plurality of row electrodes 120a and the plurality of column electrodes 140a intersect each other is directed to a phosphor particle region 190a.

所述絕緣基板110a的材料為玻璃、陶瓷或二氧化矽等絕緣材料。本實施例中，所述絕緣基板110a的材料為玻璃。 The material of the insulating substrate 110a is an insulating material such as glass, ceramic or ceria. In this embodiment, the material of the insulating substrate 110a is glass.

所述複數行電極120a的形狀為長條形或帶狀，所述複數行電極120a平行且等間距間隔設置於絕緣基板110a表面，所述行電極120a的材料為銅、鋁、金或銀等金屬。所述複數行電極120a的材料還可為銦錫氧化物(ITO)或導電漿料。本實施例中，所述複數行電極120a為銀電極。 The plurality of row electrodes 120a are in the shape of a strip or a strip. The plurality of rows of electrodes 120a are disposed in parallel and at equal intervals on the surface of the insulating substrate 110a. The material of the row electrodes 120a is copper, aluminum, gold or silver. metal. The material of the plurality of row electrodes 120a may also be indium tin oxide (ITO) or a conductive paste. In this embodiment, the plurality of row electrodes 120a are silver electrodes.

所述複數隔離體130a設置於絕緣基板110a表面，覆蓋部份行電極120a，並對應每一陰極發射體150a處設置有通孔170a。所述陰極發射體150a設置於所述隔離體130a的通孔170a內。隔離體130a的具體形狀不限。所述隔離體130a的材料為玻璃、陶瓷或二氧化矽等絕緣材料，隔離體130a的高度大於15微米。所述隔離體130a的高度不宜太高，否則將會使列電極140a所需施加的電壓太高。可以理解，所述隔離層還可為一體成型具有複數通孔170a的絕緣面板，該絕緣面板還可以及絕緣基板110a一體成型。本實施例中，所述隔離層為複數隔離體130a，所述複數隔離體130a中每個隔離體130a的高度為20微米。 The plurality of spacers 130a are disposed on the surface of the insulating substrate 110a, cover a portion of the row electrodes 120a, and are provided with through holes 170a corresponding to each of the cathode emitters 150a. The cathode emitter 150a is disposed in the through hole 170a of the separator 130a. The specific shape of the separator 130a is not limited. The material of the separator 130a is an insulating material such as glass, ceramic or cerium oxide, and the height of the separator 130a is greater than 15 micrometers. The height of the spacer 130a is not too high, otherwise the voltage to be applied to the column electrode 140a will be too high. It can be understood that the isolation layer may also be an integrally formed insulating panel having a plurality of through holes 170a, and the insulating panel may also be integrally formed with the insulating substrate 110a. In this embodiment, the isolation layer is a plurality of spacers 130a, and each of the plurality of spacers 130a has a height of 20 micrometers.

所述列電極140a的材料可為銅、鋁、金、銀等金屬。所述列電極140a的材料還可為ITO或導電漿料。所述列電極140a上形成有一排通孔170b，該通孔170b與隔離體130a的通孔170a連通設置，以使電子發射單元150a發射的電子可以通過該通孔170b射出。優選地，所述列電極140a與所述隔離體130a一一對應且重疊設置。本實施例中，所述列電極140a的材料為銀電極。 The material of the column electrode 140a may be metal such as copper, aluminum, gold or silver. The material of the column electrode 140a may also be ITO or a conductive paste. A row of through holes 170b are formed in the column electrode 140a, and the through holes 170b are communicated with the through holes 170a of the spacer 130a so that electrons emitted from the electron emission unit 150a can be emitted through the through holes 170b. Preferably, the column electrodes 140a are in one-to-one correspondence with the spacers 130a and are disposed to overlap each other. In this embodiment, the material of the column electrode 140a is a silver electrode.

所述陽極電極180a為氧化銦錫薄膜。所述陽極基板160a、陽極電極180a及所述複數螢光粉區域190a組成一陽極裝置。該陽極裝置與所述絕緣基板110a相對且間隔一段距離設置，並可進一步封裝成一密封空間。 The anode electrode 180a is an indium tin oxide film. The anode substrate 160a, the anode electrode 180a, and the plurality of phosphor particles region 190a constitute an anode device. The anode device is disposed opposite to the insulating substrate 110a and spaced apart from each other, and can be further encapsulated into a sealed space.

所述陰極發射體150a包括至少一電子發射體10。請參閱圖3、圖4、圖5及圖6，所述第一電子發射體10包括一奈米碳管管狀結構，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿線狀軸心的一端延伸出複數電子發射尖端106。所述奈米碳管管狀結構中複數奈米碳管通過凡得瓦力相互連接成一體結構。所述奈米碳管管狀結構中大多數奈米碳管通過凡得瓦力首尾相連並圍繞中空的線狀軸心螺旋延伸。可以理解，該奈米碳管管狀結構中也存在少數隨機排列的奈米碳管。該少數隨機排列的奈米碳管的延伸方向沒有規則。然，所述少數隨機排列的奈米碳管不影響所述奈米碳管管狀結構中大多數奈米碳管的排列方式與延伸方向。在此，將線狀軸心的長度方向定義為複數奈米碳管的延伸方向，將複數奈米碳管圍繞所述線狀軸心螺旋形成的方向 定義為螺旋方向。在螺旋方向上相鄰的奈米碳管通過凡得瓦力首尾相連，在延伸方向上相鄰的奈米碳管通過凡得瓦力緊密結合。該奈米碳管管狀結構中的大多數奈米碳管的螺旋方向與所述線狀軸心的長度方向形成一定的交叉角α，且α大於0°且小於等於90°。 The cathode emitter 150a includes at least one electron emitter 10. Referring to FIG. 3, FIG. 4, FIG. 5 and FIG. 6, the first electron emitter 10 includes a carbon nanotube tubular structure, and the carbon nanotube tubular structure has a hollow linear axis. The carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the carbon nanotube tubular structure extends from the one end of the linear axis to the plurality of electron emission tips 106. The plurality of carbon nanotubes in the tubular structure of the carbon nanotubes are connected to each other by a van der Waals force to form an integral structure. Most of the carbon nanotubes in the tubular structure of the carbon nanotubes are connected end to end by a van der Waals force and spirally extend around a hollow linear axis. It can be understood that there are also a small number of randomly arranged carbon nanotubes in the tubular structure of the carbon nanotube. There is no rule in the direction in which the few randomly arranged carbon nanotubes extend. However, the few randomly arranged carbon nanotubes do not affect the arrangement and extension direction of most of the carbon nanotubes in the tubular structure of the carbon nanotubes. Here, the length direction of the linear axis is defined as the extending direction of the plurality of carbon nanotubes, and the direction in which the plurality of carbon nanotubes are spirally formed around the linear axis Defined as the spiral direction. The carbon nanotubes adjacent in the spiral direction are connected end to end by the van der Waals force, and the adjacent carbon nanotubes in the extending direction are tightly coupled by the van der Waals force. The helical direction of most of the carbon nanotubes in the tubular structure of the carbon nanotube forms a certain crossing angle α with the longitudinal direction of the linear axis, and α is greater than 0° and less than or equal to 90°.

所述線狀軸心係空的，係虛擬的，係該奈米碳管管狀結構的軸心。該線狀軸心的截面形狀可為方形、梯形、圓形或橢圓形等形狀，該線狀軸心的截面大小，可以根據實際要求而定。 The linear axis is hollow and is virtual, and is the axis of the tubular structure of the carbon nanotube. The cross-sectional shape of the linear axis may be a square, trapezoidal, circular or elliptical shape, and the cross-sectional size of the linear axis may be determined according to actual requirements.

所述奈米碳管管狀結構的一端具有複數電子發射尖端106，所述複數電子發射尖端106圍繞所述線狀軸心呈環形排列。具體地，所述奈米碳管管狀結構在沿線狀軸心長度的方向具有一第一端102及與該第一端102相對的一第二端104。所述奈米碳管管狀結構的第一端102與所述行電極120a電連接，所述奈米碳管管狀結構的第二端104向所述陽極電極180a延伸作為電子發射體10的電子發射端106。本實施例中，該奈米碳管管狀結構垂直於行電極120a設置。在第二端104，所述奈米碳管管狀結構的整體直徑沿遠離行電極120a的方向逐漸減小，並收縮形成一類圓錐形的縮口，作為所述第一電子發射體10的電子發射部108。所述第一電子發射體10在應用時，在電場作用下從電子發射部108發射出電子，由於第一電子發射體10的電子發射部108為類圓錐形，可使電子發射部108的局部電場集中，因此可增強電子發射部108的場增強因子，使第一電子發射體10易於發射出電子。 One end of the tubular structure of the carbon nanotube has a plurality of electron emission tips 106, and the plurality of electron emission tips 106 are arranged in a ring shape around the linear axis. Specifically, the carbon nanotube tubular structure has a first end 102 and a second end 104 opposite the first end 102 in a direction along the length of the linear axis. The first end 102 of the tubular structure of the carbon nanotube is electrically connected to the row electrode 120a, and the second end 104 of the tubular structure of the carbon nanotube extends toward the anode electrode 180a as electron emission of the electron emitter 10. End 106. In this embodiment, the carbon nanotube tubular structure is disposed perpendicular to the row electrode 120a. At the second end 104, the overall diameter of the tubular structure of the carbon nanotubes gradually decreases in a direction away from the row electrode 120a, and contracts to form a conical shaped constriction as electron emission of the first electron emitter 10. Part 108. The first electron emitter 10 emits electrons from the electron emission portion 108 under the action of an electric field. When the electron emission portion 108 of the first electron emitter 10 is conical, the electron emission portion 108 can be partially The electric field is concentrated, so that the field enhancement factor of the electron-emitting portion 108 can be enhanced, making it easy for the first electron-emitting body 10 to emit electrons.

請一併參閱圖7，所述類圓錐形的電子發射部108的末端具有一開 口111，及複數突出的奈米碳管束。即，所述奈米碳管管狀結構具有複數電子發射尖端106的一端具有一開口111，所述奈米碳管管狀結構從開口111處延伸出複數奈米碳管束作為複數電子發射尖端106。該複數奈米碳管束為所述奈米碳管管狀結構從第二端104延伸出來的複數由奈米碳管組成的束狀結構。該複數奈米碳管束圍繞所述線狀軸心呈環狀排列，且向陽極電極180a延伸，作為複數電子發射尖端106。由於該複數電子發射尖端106呈環形排列，因此，該複數電子發射尖端106之間的間距較大，降低了該複數電子發射尖端106之間的電場屏蔽效應。該複數奈米碳管束的延伸方向基本一致，即該複數電子發射尖端106基本沿所述線狀軸心的長度方向向陽極電極180a的方向延伸，所述遠離奈米碳管管狀結構的方向係指遠離奈米碳管管狀結構的第一端102的方向延伸。進一步地，該複數奈米碳管束圍繞所述線狀軸心呈發散狀排列，即該複數電子發射尖端106的延伸方向逐漸遠離所述線狀軸心。當該複數奈米碳管束呈發散狀排列時，雖然所述電子發射部108的徑向尺寸為沿遠離奈米碳管管狀結構的第一端102方向逐漸減小，但複數電子發射尖端106呈發散性的排列，進而電子發射部108的末端向外略微擴張，從而複數電子發射尖端106之間的距離沿延伸方向逐漸變大，使開口111處的複數電子發射尖端106相互間的間距更加擴大，降低了電子發射尖端106之間的電場屏蔽效應。所述開口111的徑向尺寸範圍為4微米-6微米，本實施例中，所述開口111為圓形，所述開口111的徑向尺寸為5微米，因此位於開口111的相對兩端的電子發射尖端106的間距大於等於5微米。 Referring to FIG. 7, the end of the conical electron-emitting portion 108 has an opening. Port 111, and a plurality of protruding carbon nanotube bundles. That is, the carbon nanotube tubular structure having a plurality of electron-emitting tips 106 has an opening 111 at one end thereof, and the carbon nanotube tubular structure extends from the opening 111 as a plurality of carbon nanotube bundles as a plurality of electron-emitting tips 106. The plurality of carbon nanotube bundles are bundle structures of a plurality of carbon nanotube tubes extending from the second end 104 of the tubular structure of the carbon nanotubes. The plurality of carbon nanotube bundles are arranged in a ring shape around the linear axis and extend toward the anode electrode 180a as a plurality of electron emission tips 106. Since the plurality of electron-emitting tips 106 are arranged in a ring shape, the spacing between the plurality of electron-emitting tips 106 is large, reducing the electric field shielding effect between the plurality of electron-emitting tips 106. The plurality of carbon nanotube bundles extend substantially in the same direction, that is, the plurality of electron emission tips 106 extend substantially in the direction of the longitudinal axis of the linear axis toward the anode electrode 180a, and the direction away from the tubular structure of the carbon nanotubes Refers to extending away from the first end 102 of the tubular structure of the carbon nanotube. Further, the plurality of carbon nanotube bundles are arranged in a divergent manner around the linear axis, that is, the extension direction of the plurality of electron emission tips 106 gradually moves away from the linear axis. When the plurality of carbon nanotube bundles are arranged in a divergent manner, although the radial size of the electron-emitting portion 108 is gradually decreased in a direction away from the first end 102 of the tubular structure of the carbon nanotube, the plurality of electron-emitting tips 106 are The divergent arrangement, and the end of the electron-emitting portion 108 is slightly expanded outward, so that the distance between the plurality of electron-emitting tips 106 gradually increases in the extending direction, so that the distance between the plurality of electron-emitting tips 106 at the opening 111 is further enlarged. The electric field shielding effect between the electron emission tips 106 is reduced. The opening 111 has a radial dimension ranging from 4 micrometers to 6 micrometers. In the embodiment, the opening 111 is circular, and the opening 111 has a radial dimension of 5 micrometers, so the electrons located at opposite ends of the opening 111 are The pitch of the emission tips 106 is greater than or equal to 5 microns.

請一併參閱圖8，每個電子發射尖端106包括複數基本平行排列的奈米碳管，並且每個電子發射尖端106的頂端突出有一根奈米碳管，即所述複數平行排列的奈米碳管的中心位置突出一根奈米碳管。該突出的奈米碳管的底端(即突出的奈米碳管的非自由端)周圍還圍繞有複數奈米碳管，該複數圍繞的奈米碳管起到固定該突出的奈米碳管的作用。該突出奈米碳管的直徑小於5奈米。本實施例中突出的奈米碳管的直徑為4奈米。由於該突出的奈米碳管的直徑極其小，因此，該突出的奈米碳管具有十分大的長徑比，進而增加了該突出的奈米碳管的場增強因子，使該突出的奈米碳管的場發射性能優異。所述複數電子發射尖端106中相鄰的電子發射尖端106中的突出的奈米碳管之間的距離為0.1微米至2微米。相鄰的兩電子發射尖端106中的突出的奈米碳管之間的距離與突出的奈米碳管直徑的比例的範圍為20：1至500：1。可以理解，相鄰的電子發射尖端106的突出的奈米碳管之間的間距遠大於突出的奈米碳管的直徑，可有效降低相鄰的突出奈米碳管之間的電場屏蔽效應。 Referring to FIG. 8 together, each of the electron emission tips 106 includes a plurality of carbon nanotubes arranged substantially in parallel, and a tip of each electron emission tip 106 protrudes from a carbon nanotube, that is, the plurality of parallel arranged nanometers. A carbon nanotube protrudes from the center of the carbon tube. The bottom end of the protruding carbon nanotube (ie, the non-free end of the protruding carbon nanotube) is also surrounded by a plurality of carbon nanotubes, and the plurality of surrounding carbon nanotubes serve to fix the protruding nanocarbon The role of the tube. The protruding carbon nanotubes have a diameter of less than 5 nanometers. The protruding carbon nanotubes in this embodiment have a diameter of 4 nm. Since the diameter of the protruding carbon nanotube is extremely small, the protruding carbon nanotube has a very large aspect ratio, thereby increasing the field enhancement factor of the protruding carbon nanotube, so that the protruding nanotube The carbon nanotubes have excellent field emission properties. The distance between the protruding carbon nanotubes in adjacent electron-emitting tips 106 of the plurality of electron-emitting tips 106 is between 0.1 micrometers and 2 micrometers. The ratio of the distance between the protruding carbon nanotubes in the adjacent two electron-emitting tips 106 to the diameter of the protruding carbon nanotubes ranges from 20:1 to 500:1. It can be understood that the spacing between the protruding carbon nanotubes of the adjacent electron-emitting tips 106 is much larger than the diameter of the protruding carbon nanotubes, which can effectively reduce the electric field shielding effect between adjacent protruding carbon nanotubes.

具體的，所述奈米碳管管狀結構係由至少一奈米碳管膜或至少一奈米碳管線沿該線狀軸心的軸向緊密環繞而形成。可以理解，該奈米碳管管狀結構的管壁具有一定的厚度，所述厚度可以通過控制所環繞奈米碳管膜或奈米碳管線的層數確定。該奈米碳管管狀結構內徑及外徑的大小可以根據實際需求製備。優選地，該奈米碳管管狀結構的內徑範圍為2微米至100微米，外徑為10微米至120微米。優選地，該奈米碳管管狀結構的內徑範圍為10微米至 40微米，外徑為20微米至50微米。本實施例中，該奈米碳管管狀結構的內徑約為18微米，外徑約為30微米。 Specifically, the tubular structure of the carbon nanotubes is formed by tightly surrounding at least one carbon nanotube film or at least one nano carbon line along the axial direction of the linear axis. It will be appreciated that the tube wall of the tubular structure of the carbon nanotubes has a thickness which can be determined by controlling the number of layers surrounding the carbon nanotube membrane or the carbon nanotube line. The inner diameter and the outer diameter of the tubular structure of the carbon nanotube can be prepared according to actual needs. Preferably, the carbon nanotube tubular structure has an inner diameter ranging from 2 micrometers to 100 micrometers and an outer diameter of 10 micrometers to 120 micrometers. Preferably, the inner diameter of the tubular structure of the carbon nanotubes ranges from 10 micrometers to 40 microns and an outer diameter of 20 microns to 50 microns. In this embodiment, the tubular structure of the carbon nanotube has an inner diameter of about 18 microns and an outer diameter of about 30 microns.

所述第一電子發射體10的製備方法，包括以下步驟：(S10)提供一線狀支撐體；(S20)提供至少一奈米碳管膜或至少一奈米碳管線，將所述至少一奈米碳管膜或至少一奈米碳管線纏繞在所述線狀支撐體表面形成一奈米碳管層；(S30)移除所述線狀支撐體，得到一由奈米碳管層圍成的管狀奈米碳管預製體；及(S40)將該管狀奈米碳管預製體熔斷，形成所述電子發射體10。 The method for preparing the first electron emitter 10 includes the following steps: (S10) providing a linear support; (S20) providing at least one carbon nanotube film or at least one nano carbon line, and the at least one nano a carbon nanotube film or at least one nano carbon line is wound around the surface of the linear support to form a carbon nanotube layer; (S30) removing the linear support to obtain a layer surrounded by a carbon nanotube layer a tubular carbon nanotube preform; and (S40) blowing the tubular carbon nanotube preform to form the electron emitter 10.

在步驟(S10)中，該線狀支撐體在一控制裝置的控制下既能夠繞其中心軸旋轉又能夠沿其中心軸延伸方向做直線運動。 In the step (S10), the linear support body is both rotatable about its central axis and linearly movable along the direction of its central axis under the control of the control device.

所述線狀支撐體的材料可為單質金屬、金屬合金或高分子材料等。所述單質金屬包括金、銀、銅或鋁等，所述金屬合金包括銅錫合金等。進一步的，所述銅錫合金表面可鍍銀。所述銅錫合金可為97%銅與3%錫的合金。 The material of the linear support may be an elemental metal, a metal alloy or a polymer material. The elemental metal includes gold, silver, copper or aluminum, etc., and the metal alloy includes a copper-tin alloy or the like. Further, the surface of the copper-tin alloy may be plated with silver. The copper-tin alloy may be an alloy of 97% copper and 3% tin.

所述線狀支撐體在纏繞奈米碳管膜或奈米碳管線的過程中，主要起支撐作用，其本身具有一定的穩定性及機械強度，且可以通過化學方法、物理方法或機械方法移除。因此，該線狀支撐體的材料可以選用符合上述條件的所有材料，不限於上述列舉的幾種。可以理解，該線狀支撐體可以選用不同的直徑。本實施例中選用直徑為18微米的金線作為該線狀支撐體。 The linear support body mainly plays a supporting role in the process of winding the carbon nanotube film or the nano carbon pipeline, and has a certain stability and mechanical strength, and can be moved by chemical methods, physical methods or mechanical methods. except. Therefore, the material of the linear support may be selected from all materials satisfying the above conditions, and is not limited to the above-listed ones. It can be understood that the linear support body can be selected from different diameters. In this embodiment, a gold wire having a diameter of 18 μm is selected as the linear support.

在步驟(S20)中，所述至少一奈米碳管膜或至少一奈米碳管線為自支撐結構。具體地，所述奈米碳管膜可為奈米碳管拉膜、奈 米碳管絮化膜或奈米碳管碾壓膜等。所述奈米碳管膜由若干奈米碳管組成，該若干奈米碳管無序或有序排列。所謂無序排列係指奈米碳管的排列方向無規則。所謂有序排列係指奈米碳管的排列方向有規則。具體地，當奈米碳管膜包括無序排列的奈米碳管時，奈米碳管相互纏繞或者各向同性排列；當奈米碳管膜包括有序排列的奈米碳管時，奈米碳管沿一方向或者複數方向擇優取向延伸。所謂“擇優取向”係指所述奈米碳管膜中的大多數奈米碳管在一方向或幾個方向上具有較大的取向機率；即，該奈米碳管膜中的大多數奈米碳管的軸向基本沿同一方向或幾個方向延伸。 In the step (S20), the at least one carbon nanotube film or the at least one nanocarbon line is a self-supporting structure. Specifically, the carbon nanotube membrane can be a carbon nanotube membrane, Carbon tube flocculation membrane or carbon nanotube membrane. The carbon nanotube membrane is composed of a plurality of carbon nanotubes, which are disorderly or orderedly arranged. The so-called disordered arrangement means that the arrangement direction of the carbon nanotubes is irregular. The so-called ordered arrangement means that the arrangement direction of the carbon nanotubes is regular. Specifically, when the carbon nanotube film comprises a disordered arrangement of carbon nanotubes, the carbon nanotubes are entangled or isotropically arranged; when the carbon nanotube film comprises an ordered arrangement of carbon nanotubes, The carbon nanotubes extend in a preferred orientation in one direction or in a plurality of directions. By "preferable orientation" is meant that most of the carbon nanotubes in the carbon nanotube membrane have a greater probability of orientation in one or more directions; that is, most of the naphthalene membranes. The axial direction of the carbon nanotubes extends substantially in the same direction or in several directions.

當所述奈米碳管膜為奈米碳管拉膜或奈米碳管線時，其步驟(S20)可包括以下步驟：步驟(S210)，形成至少一奈米碳管陣列。 When the carbon nanotube film is a carbon nanotube film or a nano carbon line, the step (S20) may include the following steps: step (S210), forming at least one carbon nanotube array.

提供一基底，所述奈米碳管陣列形成於所述基底表面。所述奈米碳管陣列由複數奈米碳管組成，該奈米碳管為單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中的一種或複數種。本實施例中，該複數奈米碳管為多壁奈米碳管，且該複數奈米碳管基本上相互平行且垂直於所述基底，該奈米碳管陣列不含雜質，如無定型碳或殘留的催化劑金屬顆粒等。所述奈米碳管陣列的製備方法包括化學氣相沈積法、電弧放電法、鐳射燒蝕法等，所述奈米碳管陣列的製備方法不限。優選地，該奈米碳管陣列為超順排奈米碳管陣列。 A substrate is provided, the array of carbon nanotubes being formed on a surface of the substrate. The carbon nanotube array is composed of a plurality of carbon nanotubes, which are one or a plurality of single-walled carbon nanotubes, double-walled carbon nanotubes, and multi-walled carbon nanotubes. In this embodiment, the plurality of carbon nanotubes are multi-walled carbon nanotubes, and the plurality of carbon nanotubes are substantially parallel to each other and perpendicular to the substrate, and the array of carbon nanotubes contains no impurities, such as amorphous Carbon or residual catalyst metal particles, etc. The preparation method of the carbon nanotube array includes a chemical vapor deposition method, an arc discharge method, a laser ablation method, and the like, and the preparation method of the carbon nanotube array is not limited. Preferably, the array of carbon nanotubes is a super-sequential carbon nanotube array.

步驟(S220)，從所述奈米碳管陣列中拉取獲得一奈米碳管拉膜 或奈米碳管線。 Step (S220), extracting a carbon nanotube film from the carbon nanotube array Or nano carbon pipeline.

本實施例採用具有一定寬度的膠帶、鑷子或夾子接觸奈米碳管陣列以選定一具有一定寬度的複數奈米碳管；以一定速度拉伸該選定的奈米碳管，該拉取方向沿基本垂直於奈米碳管陣列的生長方向。從而使得奈米碳管首尾相連地被拉出，進而形成一連續的奈米碳管拉膜。在上述拉伸過程中，該複數奈米碳管片段在拉力作用下沿拉伸方向逐漸脫離基底的同時，由於凡得瓦力作用，在拉伸方向上相鄰的複數奈米碳管之間首尾相連地連續地被拉出，從而形成一連續、均勻且具有一定寬度的奈米碳管拉膜。該奈米碳管拉膜的寬度與奈米碳管陣列所生長的基底的尺寸有關，該奈米碳管拉膜的長度不限，可根據實際需求製得。所述奈米碳管拉膜的結構及其製備方法請參見范守善等人於2007年2月12日申請的，於2010年07月11日公告的第I327177號之中華民國專利說明書。可以理解，當該奈米碳管拉膜的寬度很窄的情況下，可以形成所述奈米碳管線。 In this embodiment, the carbon nanotube array is contacted with a tape, a tweezers or a clip having a certain width to select a plurality of carbon nanotubes having a certain width; and the selected carbon nanotubes are stretched at a certain speed, the pulling direction along the pulling direction It is substantially perpendicular to the growth direction of the nanotube array. Thereby, the carbon nanotubes are pulled out end to end, thereby forming a continuous carbon nanotube film. In the above stretching process, the plurality of carbon nanotube segments are gradually separated from the substrate in the stretching direction under the action of the tensile force, and the plurality of carbon nanotubes adjacent to each other in the stretching direction are affected by the van der Waals force. The film is continuously pulled out end to end to form a continuous, uniform, and wide-width carbon nanotube film. The width of the carbon nanotube film is related to the size of the substrate on which the carbon nanotube array is grown. The length of the carbon nanotube film is not limited and can be obtained according to actual needs. For the structure of the carbon nanotube film and the preparation method thereof, please refer to the Republic of China patent specification No. I327177 which was filed on February 11, 2010 by Fan Shoushan et al. It can be understood that the nanocarbon line can be formed when the width of the carbon nanotube film is narrow.

步驟(S230)，將所述至少一奈米碳管拉膜或至少一奈米碳管線纏繞於所述線狀支撐體上形成一奈米碳管層。 In step (S230), the at least one carbon nanotube film or at least one nano carbon line is wound on the linear support to form a carbon nanotube layer.

將所述奈米碳管拉膜或奈米碳管線纏繞於所述線狀支撐體上形成一奈米碳管層的方法包括以下步驟：首先，將通過以上方法製備的所述奈米碳管拉膜或奈米碳管線的一端固定於所述線狀支撐體表面；其次，使該線狀支撐體繞其中心軸旋轉的同時沿其中心軸延伸方向做直線運動，即可得到一表面螺旋纏繞有奈米碳管膜或奈米碳管線的線狀支撐體。其中，所述奈米碳管拉膜或奈米碳管 線中大多數奈米碳管的螺旋方向與線狀支撐體的軸心的延伸方向具有一定的交叉角α，α大於0°小於等於90°。可以理解，在奈米碳管拉膜厚度或奈米碳管線直徑一定的情況下，交叉角α越小，則纏繞得到的奈米碳管層就越薄，交叉角α越大，則纏繞得到的奈米碳管層的厚度就越厚。本實施例中，將一奈米碳管拉膜纏繞於一直徑為18微米的金線的表面。所述奈米碳管拉膜的纏繞厚度為6微米，通過將一奈米碳管拉膜的一端固定於所述金線的表面，使金線繞其中心軸旋轉同時沿其中心軸延伸方向做直線運動，從而使奈米碳管拉膜纏繞於金線的表面。 The method of winding the carbon nanotube film or nano carbon line on the linear support to form a carbon nanotube layer comprises the following steps: First, the carbon nanotube prepared by the above method One end of the film or nano carbon line is fixed to the surface of the linear support; secondly, the linear support is linearly moved along the direction of its central axis while rotating about its central axis, thereby obtaining a surface spiral A linear support wound with a carbon nanotube film or a nano carbon line. Wherein the carbon nanotube film or carbon nanotube The spiral direction of most of the carbon nanotubes in the line has a certain crossing angle α with the extending direction of the axis of the linear support, and α is greater than 0° and less than or equal to 90°. It can be understood that, in the case where the thickness of the carbon nanotube film or the diameter of the carbon nanotube line is constant, the smaller the cross angle α, the thinner the carbon nanotube layer obtained by winding, and the larger the crossing angle α, the winding is obtained. The thicker the carbon nanotube layer is. In this embodiment, a carbon nanotube film is wound around a surface of a gold wire having a diameter of 18 μm. The carbon nanotube film is wound to a thickness of 6 micrometers, and a gold wire is rotated around a central axis thereof while extending along a central axis thereof by fixing one end of a carbon nanotube film to the surface of the gold wire. Make a linear motion so that the carbon nanotube film is wound around the surface of the gold wire.

步驟(S30)，移除所述線狀支撐體，得到一由奈米碳管層圍成的管狀的奈米碳管預製體。 Step (S30), removing the linear support body to obtain a tubular carbon nanotube preform surrounded by a carbon nanotube layer.

將所述的線狀支撐體通過化學方法、物理方法或機械方法移除。當採用活潑的單質金屬材料或金屬合金作該線狀支撐體時，如鐵或鋁及其合金，可以使用一酸性溶液與該活潑的金屬材料反應，將該線狀支撐體移除，例如採用濃度為0.5mol/L的鹽酸溶液腐蝕鋁線，將鋁線移除。當採用不活潑的單質金屬材料或金屬合金作該線狀支撐體時，如金或銀及其合金，可以使用加熱蒸發的方法，移除所述線狀支撐體；當採用高分子材料作線狀支撐體時，可以使用一拉伸裝置沿所述線狀支撐體的中心軸方向拉出所述線狀支撐體。可以理解，根據線狀支撐體直徑的不同可以得到不同內徑的管狀奈米碳管預製體。金線的移除可以通過將所述奈米碳管層及金線的兩端分別連接一電極，在真空環境中，通過電極給奈米碳管層及金線通電流，使奈米碳管層及金線升溫，當溫度升高 到高於金線的熔點時，金線被蒸發從而去除。 The linear support is removed by chemical, physical or mechanical means. When a reactive elemental metal material or metal alloy is used as the linear support, such as iron or aluminum and its alloy, an acidic solution may be reacted with the active metal material to remove the linear support, for example, The aluminum wire was etched by a hydrochloric acid solution having a concentration of 0.5 mol/L, and the aluminum wire was removed. When an inactive elemental metal material or metal alloy is used as the linear support, such as gold or silver and its alloy, the linear support may be removed by heating and evaporation; when a polymer material is used as the line In the case of the support, the linear support may be pulled out along the central axis direction of the linear support using a stretching device. It can be understood that the tubular inner diameter carbon nanotube preforms having different inner diameters can be obtained according to the diameter of the linear support body. The gold wire can be removed by connecting the two ends of the carbon nanotube layer and the gold wire to an electrode, and in a vacuum environment, the carbon nanotube layer and the gold wire are passed through the electrode to pass the current to make the carbon nanotube. Layer and gold wire warm up when temperature rises When it is above the melting point of the gold wire, the gold wire is evaporated to be removed.

請參閱圖9，本實施例中，該管狀奈米碳管預製體中的大多數奈米碳管均首尾相連地沿著線狀軸心的長度方向螺旋狀延伸。該管狀奈米碳管預製體中的大多數奈米碳管中每一奈米碳管與在延伸方向上相鄰的奈米碳管通過凡得瓦力首尾相連。該大多數奈米碳管中每一奈米碳管的延伸方向與所述管狀奈米碳管預製體的線狀軸心的長度方向形成一定的交叉角α，α大於0°小於等於90°。 Referring to FIG. 9, in the embodiment, most of the carbon nanotubes in the tubular carbon nanotube preform are spirally extended end to end along the length of the linear axis. Each of the carbon nanotubes in the majority of the nanotubes in the tubular carbon nanotube preform is connected end to end with a vanadium tube in the extending direction. The extending direction of each of the carbon nanotubes in the majority of the carbon nanotubes forms a certain intersection angle α with the longitudinal direction of the linear axis of the tubular carbon nanotube preform, and α is greater than 0° and less than or equal to 90°. .

步驟(S40)，將該管狀奈米碳管預製體熔斷，形成所述電子發射體10。 In step (S40), the tubular carbon nanotube preform is melted to form the electron emitter 10.

該管狀奈米碳管預製體的熔斷方法包括電流熔斷法、電子轟擊法及鐳射照射法。所述管狀奈米碳管預製體在沿其中空線狀軸心的長度方向的一處位置發生熔斷，所述管狀奈米碳管預製體在熔斷處形成複數奈米碳管束，形成二電子發射體10。 The method of fusing the tubular carbon nanotube preform includes a current fusing method, an electron bombardment method, and a laser irradiation method. The tubular carbon nanotube preform is melted at a position along the length direction of the hollow axis, and the tubular carbon nanotube preform forms a plurality of carbon nanotube bundles at the fuse to form a two-electron emission Body 10.

方法一：電流熔斷法，即將該管狀奈米碳管預製體通電流加熱熔斷。方法一可以在真空環境下或惰性氣體保護的環境下進行，其具體包括以下步驟：首先，將該管狀奈米碳管預製體懸空設置於一真空室內或充滿惰性氣體的反應室。 Method 1: Current fusing method, that is, the tubular carbon nanotube preform is heated and blown by current. The method 1 can be carried out under a vacuum environment or an inert gas protection environment, and specifically includes the following steps: First, the tubular carbon nanotube preform is suspended in a vacuum chamber or a reaction chamber filled with an inert gas.

該真空室包括一可視視窗及一陽極接線柱與一陰極接線柱，且其真空度低於1×10-1帕，優選為2×10-5帕。該管狀奈米碳管預製體兩端分別與陽極接線柱及陰極接線柱電性連接。本實施例中，該陽極接線柱與陰極接線柱為直徑0.5毫米的銅絲導線。 The vacuum chamber includes a visible window and an anode terminal and a cathode terminal, and has a vacuum of less than 1 × 10 -1 Pa, preferably 2 × 10 -5 Pa. The tubular carbon nanotube preform is electrically connected to the anode terminal and the cathode terminal respectively. In this embodiment, the anode terminal and the cathode terminal are copper wire wires having a diameter of 0.5 mm.

所述的充滿惰性氣體的反應室結構與真空室相同，惰性氣體可以係氦氣或氬氣等。 The reaction chamber filled with an inert gas has the same structure as the vacuum chamber, and the inert gas may be helium or argon.

其次，在該管狀奈米碳管預製體兩端施加一電壓，通入電流加熱熔斷。 Next, a voltage is applied across the tubular carbon nanotube preform, and a current is applied to heat the fuse.

在陽極接線柱與陰極接線柱之間施加一40伏特的直流電壓。本技術領域人員應當明白，陽極接線柱與陰極接線柱之間施加的電壓與所選的奈米碳管預製體的內徑、外經、壁厚及長度有關。在直流條件下通過焦耳熱加熱管狀奈米碳管預製體。加熱溫度優選為2000K至2400K，加熱時間小於1小時。在真空直流加熱過程中，通過管狀奈米碳管預製體的電流會逐漸上升，但很快電流就開始下降直到管狀奈米碳管預製體被熔斷。在熔斷前，管狀奈米碳管預製體上會出現一亮點，管狀奈米碳管預製體從該亮點處熔斷。 A 40 volt DC voltage is applied between the anode and cathode posts. Those skilled in the art will appreciate that the voltage applied between the anode and cathode posts is related to the inner diameter, outer diameter, wall thickness and length of the selected carbon nanotube preform. The tubular carbon nanotube preform is heated by Joule heat under direct current conditions. The heating temperature is preferably from 2000 K to 2400 K, and the heating time is less than 1 hour. During vacuum DC heating, the current through the tubular carbon nanotube preform gradually rises, but the current begins to drop until the tubular carbon nanotube preform is blown. Before the fusing, a bright spot appears on the tubular carbon nanotube preform, from which the tubular carbon nanotube preform is blown.

由於管狀奈米碳管預製體中各點的電阻不同，使得各點的分電壓也不同。在管狀奈米碳管預製體中電阻較大的一點，會得到較大的分電壓，從而具有較大的加熱功率，產生較多的焦耳熱，使該點的溫度迅速升高。在熔斷的過程中，該點的電阻會越來越大，導致該點的分電壓也越來越大，同時，溫度也越來越大直到該點斷裂，形成二電子發射體10。在熔斷的瞬間，陰極與陽極之間會產生一非常小的間隙，同時在熔斷點位置附近，由於碳的蒸發，真空度較差，這些因素會使熔斷的瞬間在熔斷點附近產生氣體電離。電離後的離子轟擊熔斷的管狀奈米碳管預製體的端部，在所述管狀奈米碳管預製體端部形成複數奈米碳管束，從而在該奈米碳管管狀結構的一端形成複數電子發射尖端106。由於在熔斷的 過程中，越靠近熔斷點，碳原子蒸發的越多，從而使管狀奈米碳管預製體的一端形成一縮口。 Since the resistance of each point in the tubular carbon nanotube preform is different, the partial voltages at the respective points are also different. In the tubular carbon nanotube preform, a larger resistance will result in a larger partial voltage, which has a larger heating power, and generates more Joule heat, so that the temperature at this point rises rapidly. During the fusing process, the resistance at this point will become larger and larger, causing the partial voltage at that point to become larger and larger, and at the same time, the temperature is also increased until the point is broken to form the two electron emitter 10. At the moment of melting, a very small gap is generated between the cathode and the anode, and at the same time, near the position of the melting point, the degree of vacuum is poor due to evaporation of carbon, and these factors cause gas ionization to occur near the melting point at the moment of melting. The ionized bombardment blows the end of the blown tubular carbon nanotube preform, forming a plurality of carbon nanotube bundles at the end of the tubular carbon nanotube preform, thereby forming a plurality at the end of the tubular structure of the carbon nanotube The electron emission tip 106. Due to the blown In the process, the closer to the melting point, the more the carbon atoms evaporate, thereby forming a constriction at one end of the tubular carbon nanotube preform.

本實施例採用的真空熔斷法，避免了奈米碳管預製體熔斷後得到的奈米碳管管狀結構一端的複數場發射尖端的污染，而且，加熱過程中奈米碳管預製體的機械強度會有一定提高，使之具備優良的場發射性能。 The vacuum melting method used in the embodiment avoids the contamination of the complex field emission tip at one end of the tubular structure of the carbon nanotube obtained after the carbon nanotube preform is melted, and the mechanical strength of the carbon nanotube preform during heating. There will be some improvement to make it have excellent field emission performance.

方法二：電子轟擊法，即首先加熱該管狀奈米碳管預製體，然後提供一電子發射源，使用該電子發射源轟擊該管狀奈米碳管預製體，使該管狀奈米碳管預製體在被轟擊處熔斷。方法二具體包括以下步驟：首先，加熱該管狀奈米碳管預製體。 Method 2: electron bombardment method, that is, first heating the tubular carbon nanotube preform, and then providing an electron emission source, using the electron emission source to bombard the tubular carbon nanotube preform to make the tubular carbon nanotube preform Blowed at the bombardment. The method 2 specifically includes the following steps: First, heating the tubular carbon nanotube preform.

將該管狀奈米碳管預製體放置於一真空系統。該真空系統的真空度維持1×10-4帕至1×10-5帕。在該管狀奈米碳管預製體中通入電流，加熱該管狀奈米碳管預製體至1800K至2500K。 The tubular carbon nanotube preform is placed in a vacuum system. The vacuum system maintains a vacuum of 1 x 10 -4 Pa to 1 x 10 -5 Pa. An electric current is introduced into the tubular carbon nanotube preform to heat the tubular carbon nanotube preform to 1800K to 2500K.

其次，提供一電子發射源，使用該電子發射源轟擊該管狀奈米碳管預製體，使該管狀奈米碳管預製體在被轟擊處熔斷。 Secondly, an electron emission source is provided, and the tubular carbon nanotube preform is bombarded with the electron emission source, so that the tubular carbon nanotube preform is blown at the bombardment.

提供一電子發射源，該電子發射源可採用奈米碳管線。將該電子發射源接入一低電位，該管狀奈米碳管預製體接入一高電位。將該電子發射源與該管狀奈米碳管預製體垂直放置，並使該電子發射源指向該管狀奈米碳管預製體被轟擊處。該電子發射源發射的電子束轟擊該管狀奈米碳管預製體的管壁，使該管狀奈米碳管預製體被轟擊處的溫度升高。這樣一來，該管狀奈米碳管預製體被 轟擊處具有最高的溫度。該管狀奈米碳管預製體會在該轟擊處熔斷，形成奈米碳管管狀結構，該奈米碳管管狀結構的一端形成複數電子發射尖端106。 An electron emission source is provided, and the electron emission source can be a carbon nanotube. The electron emission source is connected to a low potential, and the tubular carbon nanotube preform is connected to a high potential. The electron emission source is placed perpendicular to the tubular carbon nanotube preform, and the electron emission source is directed to the tubular carbon nanotube preform to be bombarded. The electron beam emitted from the electron emission source bombards the tube wall of the tubular carbon nanotube preform, so that the temperature of the tubular carbon nanotube preform is bombarded. In this way, the tubular carbon nanotube preform is The bombardment has the highest temperature. The tubular carbon nanotube preform is melted at the bombardment to form a tubular structure of carbon nanotubes having a plurality of electron-emitting tips 106 formed at one end of the tubular structure.

進一步地，上述電子發射源相對於該管狀奈米碳管預製體的具體定位，可以通過一操作臺來實現。其中，該電子發射源與該管狀奈米碳管預製體之間的距離為50微米至2毫米。本發明實施例優選將該管狀奈米碳管預製體固定到一可以實現三維移動的操作臺上。通過調節該管狀奈米碳管預製體在三維空間的移動，使該電子發射源與該管狀奈米碳管預製體在同一平面內並且互相垂直。該電子發射源與該管狀奈米碳管預製體之間的距離為50微米。 Further, the specific positioning of the electron emission source relative to the tubular carbon nanotube preform can be realized by a console. Wherein, the distance between the electron emission source and the tubular carbon nanotube preform is 50 micrometers to 2 millimeters. In an embodiment of the invention, the tubular carbon nanotube preform is preferably fixed to a station on which three-dimensional movement can be achieved. By adjusting the movement of the tubular carbon nanotube preform in three dimensions, the electron emission source is in the same plane and perpendicular to the tubular carbon nanotube preform. The distance between the electron emission source and the tubular carbon nanotube preform is 50 microns.

可以理解，為了提供更大的場發射電流以提高該管狀奈米碳管預製體局域的溫度，可以使用複數電子發射源同時提供場發射電流。進一步地，還可以使用其他形式的電子束來實現該管狀奈米碳管預製體的定點熔斷，比如傳統的熱陰極電子源發射的電子束或者其他常見場發射電子源發射的電子束。 It will be appreciated that in order to provide a greater field emission current to increase the temperature of the tubular carbon nanotube preform local, a plurality of electron emission sources may be used to simultaneously provide a field emission current. Further, other forms of electron beams can also be used to effect spot-spotting of the tubular carbon nanotube preform, such as an electron beam emitted by a conventional hot cathode electron source or an electron beam emitted by other common field emission electron sources.

方法三：鐳射照射法，即以一定功率及掃描速度的鐳射照射該管狀奈米碳管預製體，在該管狀奈米碳管預製體通入電流，該管狀奈米碳管預製體在被鐳射照射處熔斷，形成所述電子發射體10。方法三具體包括以下步驟：首先，以一定功率及掃描速度的鐳射照射該管狀奈米碳管預製體。 Method 3: a laser irradiation method, that is, irradiating the tubular carbon nanotube preform with a laser of a certain power and a scanning speed, and introducing a current into the tubular carbon nanotube preform, the tubular carbon nanotube preform being laser-injected The electron beam 10 is formed by melting at the irradiation place. The third method specifically includes the following steps: First, the tubular carbon nanotube preform is irradiated with laser light of a certain power and scanning speed.

將上述的管狀奈米碳管預製體放置於空氣或者含有氧化性氣體的 氣氛中。以一定功率及掃描速度的鐳射照射該管狀奈米碳管預製體。當該管狀奈米碳管預製體的某一位置被鐳射照射溫度升高後，空氣中的氧氣會氧化該位置處的奈米碳管，產生缺陷，從而使該位置處的電阻變大。 Place the above tubular carbon nanotube preform in air or contain an oxidizing gas In the atmosphere. The tubular carbon nanotube preform is irradiated with laser light of a certain power and scanning speed. When a position of the tubular carbon nanotube preform is raised by the laser irradiation temperature, oxygen in the air oxidizes the carbon nanotube at the position to cause a defect, thereby increasing the electric resistance at the position.

可以理解，鐳射照射該管狀奈米碳管預製體的時間及該鐳射的功率成反比。即鐳射功率較大時，鐳射照射該管狀奈米碳管預製體的時間較短；鐳射功率較小時，鐳射照射該管狀奈米碳管預製體的時間較長。 It will be appreciated that the time that the laser illuminates the tubular carbon nanotube preform is inversely proportional to the power of the laser. That is, when the laser power is large, the time for the laser to irradiate the tubular carbon nanotube preform is short; when the laser power is small, the laser irradiates the tubular carbon nanotube preform for a long time.

鐳射的功率為1瓦~60瓦，掃描速度為100-2000毫米/秒。優選的，鐳射的功率為12瓦，掃描速度為1000毫米/秒。鐳射可以係二氧化碳鐳射、半導體鐳射、紫外鐳射等任何形式的鐳射，只要能產生加熱的效果即可。 The laser power is 1 watt to 60 watts and the scanning speed is 100-2000 mm/sec. Preferably, the laser power is 12 watts and the scanning speed is 1000 mm/second. The laser can be any type of laser such as carbon dioxide laser, semiconductor laser, ultraviolet laser, etc., as long as it can produce heating effect.

其次，在該管狀奈米碳管預製體通入電流，管狀奈米碳管預製體在被鐳射照射處熔斷，形成二奈米碳管管狀結構，且奈米碳管管管狀結構的一端形成有複數電子發射尖端106。 Secondly, a current is applied to the tubular carbon nanotube preform, and the tubular carbon nanotube preform is melted by the laser irradiation to form a tubular structure of the carbon nanotubes, and one end of the tubular structure of the carbon nanotube tube is formed. A plurality of electron emission tips 106.

將經過鐳射照射後的管狀奈米碳管預製體放置於一真空系統中，該奈米碳管管狀結構兩端分別與陽極接線柱及陰極接線柱電性連接後通入電流。該管狀奈米碳管預製體中被鐳射照射的部位係溫度最高的部位，最後該管狀奈米碳管預製體會在該處熔斷，形成二奈米碳管管狀結構。 The tubular carbon nanotube preform after laser irradiation is placed in a vacuum system, and the carbon nanotube tubular structure is electrically connected to the anode terminal and the cathode terminal respectively, and then an electric current is supplied. The portion of the tubular carbon nanotube preform that is irradiated with laser light is the portion with the highest temperature, and finally the tubular carbon nanotube preform is melted there to form a tubular structure of two carbon nanotubes.

可以理解，還可以將該管狀奈米碳管預製體設置在一真空或者充滿惰性氣體的氣氛中。該管狀奈米碳管預製體在被電流加熱的同 時，以一定功率及掃描速度的鐳射照射該管狀奈米碳管預製體。由於係真空或者惰性氣體的氣氛，故該管狀奈米碳管預製體可以被穩定地加熱。當該管狀奈米碳管預製體的某一位置被鐳射照射溫度升高後，該位置係溫度最高的部位，最後該管狀奈米碳管預製體會在該處燒斷。 It will be appreciated that the tubular carbon nanotube preform can also be placed in a vacuum or an atmosphere filled with an inert gas. The tubular carbon nanotube preform is heated by current The tubular carbon nanotube preform is irradiated with laser light of a certain power and scanning speed. The tubular carbon nanotube preform can be stably heated due to a vacuum or an atmosphere of an inert gas. When a position of the tubular carbon nanotube preform is raised by the laser irradiation temperature, the position is the highest temperature portion, and finally the tubular carbon nanotube preform is blown there.

由於管狀奈米碳管預製體兩端分別固定於陽極接線柱與陰極接線柱，並且相鄰奈米碳管之間存在凡得瓦力，因此在熔斷的過程中，熔斷處的奈米碳管在遠離熔斷處並與之相鄰的奈米碳管的作用下，其螺旋方向逐漸趨向於延伸方向，即，奈米碳管的螺旋方向與所述延伸方向所形成的交叉角α逐漸接近於0°並分散，形成所述複數發散的電子發射尖端106。 Since the two ends of the tubular carbon nanotube preform are respectively fixed to the anode terminal and the cathode terminal, and the van der Waals force exists between adjacent carbon nanotubes, the carbon nanotube at the fuse is blown during the fusing process. Under the action of the carbon nanotubes away from the fuse and adjacent thereto, the spiral direction gradually tends to extend, that is, the intersection angle α formed by the spiral direction of the carbon nanotubes with the extending direction is gradually close to 0° and dispersed to form the plurality of diverging electron emission tips 106.

通過上述三種熔斷管狀奈米碳管預製體的方法得到的電子發射體10中的奈米碳管的質量得到了極大的提高。這一方面係由於奈米碳管經過熱處理後缺陷減少，另一方面係因為富含缺陷的石墨層容易在高溫下崩潰，剩下一些質量較高的石墨層。本實施例中採用電流熔斷法熔斷上述管狀奈米碳管預製體。 The quality of the carbon nanotubes in the electron emitter 10 obtained by the above three methods of fusing a tubular carbon nanotube preform is greatly improved. This is due to the reduced defects of the carbon nanotubes after heat treatment, and the fact that the graphite layer rich in defects is liable to collapse at high temperatures, leaving some higher quality graphite layers. In the embodiment, the tubular carbon nanotube preform is melted by a current fusing method.

本發明提供的第一電子發射體10的製備方法具有如下優點：其一，該種電子發射體10的製備方法簡單，可以提高電子發射體10的製備效率；其二，通過熔斷的方法使管狀奈米碳管預製體熔斷後得到的奈米碳管管狀結構的一端形成有複數電子發射尖端106，進而使該奈米碳管管狀結構具有較好的電子發射性能。 The method for preparing the first electron emitter 10 provided by the invention has the following advantages: First, the preparation method of the electron emitter 10 is simple, and the preparation efficiency of the electron emitter 10 can be improved; and second, the tubular method is made by fusing. One end of the tubular structure of the carbon nanotube obtained after the carbon nanotube preform is melted is formed with a plurality of electron emission tips 106, so that the tubular structure of the carbon nanotubes has better electron emission performance.

請一併參閱圖10，所述陰極發射體150還可以包括至少一另一種 電子發射體20。所述電子場發射體20包括一奈米碳管複合線狀結構。所述奈米碳管複合線狀結構包括一導電線狀結構26及一奈米碳管層24設置在所述導電線狀結構26的表面，所述奈米碳管層24環繞所述導電線狀結構26形成一奈米碳管管狀結構，在所述奈米碳管複合線狀結構的一端，所述奈米碳管管狀結構伸出複數電子發射尖端28。所述奈米碳管複合線狀結構具有複數電子發射尖端28的一端為類圓錐形，作為電子發射部22。具體地，所述導電線狀結構26的整個表面被所述奈米碳管層24包覆。該奈米碳管管狀結構的長度大於所述導電線狀結構26的長度。所述奈米碳管層24為至少一自支撐的奈米碳管膜或奈米碳管線纏繞在所述導電線狀結構26的表面形成。該種電子發射體20的結構與電子發射體10的結構基本相似，所述第二電子發射體20中奈米碳管層24形成的奈米碳管管狀結構與所述第一電子發射體10中的奈米碳管管狀結構完全相同。其區別在於：所述電子發射體20進一步包括一導電線狀結構26設置於該奈米碳管管狀結構的內部。即，所述導電線狀結構26設置在所述奈米碳管管狀結構的中空的線狀軸心的位置，並取代了中空的線狀軸心。 Referring to FIG. 10 together, the cathode emitter 150 may further include at least one other Electron emitter 20. The electron field emitter 20 includes a carbon nanotube composite wire structure. The carbon nanotube composite linear structure includes a conductive linear structure 26 and a carbon nanotube layer 24 disposed on a surface of the conductive linear structure 26, and the carbon nanotube layer 24 surrounds the conductive line The tubular structure 26 forms a tubular structure of carbon nanotubes, and at one end of the composite structure of the carbon nanotubes, the tubular structure of the carbon nanotubes extends beyond the plurality of electron-emitting tips 28. The carbon nanotube composite linear structure having one end of the complex electron emission tip 28 is a conical shape as the electron emission portion 22. Specifically, the entire surface of the electrically conductive linear structure 26 is covered by the carbon nanotube layer 24. The length of the carbon nanotube tubular structure is greater than the length of the electrically conductive linear structure 26. The carbon nanotube layer 24 is formed by winding at least one self-supporting carbon nanotube film or a nanocarbon line on the surface of the conductive linear structure 26. The structure of the electron emitter 20 is substantially similar to that of the electron emitter 10. The carbon nanotube tubular structure formed by the carbon nanotube layer 24 in the second electron emitter 20 and the first electron emitter 10 The tubular structure of the carbon nanotubes in the middle is identical. The difference is that the electron emitter 20 further includes a conductive linear structure 26 disposed inside the tubular structure of the carbon nanotube. That is, the electrically conductive linear structure 26 is disposed at a position of a hollow linear axis of the tubular structure of the carbon nanotubes, and replaces a hollow linear axis.

所述導電線狀結構26具有支撐所述奈米碳管管狀結構的作用，所以該導電線狀結構26應具有一定的強度及韌性。導電線狀結構26的材料可為單質金屬，所述單質金屬材料可為金、銀、銅或鋁等金屬材料。所述導電線狀結構26的材料也可為金屬合金材料，如銅錫合金。所述導電線狀結構26的材料還可為碳纖維等導電的非金屬材料或導電的金屬氧化物等。所述導電線狀結構26還可為具 有一導電層的複合線狀結構，如在銅錫合金表面進一步塗覆一層鋁膜；還可以在一柔性材料如纖維絲的表面鍍金膜。所述導電線狀結構26的直徑不限，只要該導電線狀結構26具有一定強度即可。優選地，所述導電線狀結構26的直徑範圍為10微米到30微米。當導電線狀結構26為鋁絲，該鋁絲的直徑可為25微米。本實施例中，該導電線狀結構26為金絲，該金絲的直徑可為18微米。 The electrically conductive linear structure 26 has the function of supporting the tubular structure of the carbon nanotubes, so the electrically conductive linear structure 26 should have a certain strength and toughness. The material of the conductive linear structure 26 may be an elemental metal, and the elemental metal material may be a metal material such as gold, silver, copper or aluminum. The material of the conductive linear structure 26 may also be a metal alloy material such as a copper-tin alloy. The material of the conductive linear structure 26 may also be a conductive non-metal material such as carbon fiber or a conductive metal oxide or the like. The conductive wire structure 26 can also be A composite linear structure having a conductive layer, such as a further coating of an aluminum film on the surface of the copper-tin alloy; a gold-plated film may also be applied to the surface of a flexible material such as a filament. The diameter of the conductive linear structure 26 is not limited as long as the conductive linear structure 26 has a certain strength. Preferably, the electrically conductive linear structure 26 has a diameter ranging from 10 micrometers to 30 micrometers. When the electrically conductive wire structure 26 is an aluminum wire, the aluminum wire may have a diameter of 25 microns. In this embodiment, the conductive linear structure 26 is a gold wire, and the gold wire may have a diameter of 18 micrometers.

所述電子發射體20的奈米碳管管狀結構中設置有一導電線狀結構26，該導電線狀結構26可支撐所述奈米碳管管狀結構，使奈米碳管管狀結構不易變形，且該導電線狀結構26可使電子發射體20的導電性增加，使電子發射體20更易於發射電子。 The tubular structure of the carbon nanotubes of the electron emitter 20 is provided with a conductive linear structure 26, which can support the tubular structure of the carbon nanotubes, so that the tubular structure of the carbon nanotubes is not easily deformed, and The electrically conductive linear structure 26 increases the conductivity of the electron emitter 20, making it easier for the electron emitter 20 to emit electrons.

該電子發射體20的製備方法，其包括以下步驟：步驟S201，提供一導電線狀結構26，及至少一奈米碳管膜或至少一奈米碳管線。步驟S202，將所述至少一奈米碳管膜或至少一奈米碳管線纏繞在所述導電線狀結構26表面形成一奈米碳管複合線狀結構。步驟S203，熔斷所述奈米碳管複合線狀結構得到電子發射體20。 The method for preparing the electron emitter 20 includes the following steps: Step S201, providing a conductive linear structure 26, and at least one carbon nanotube film or at least one nano carbon line. Step S202, winding the at least one carbon nanotube film or at least one nano carbon line on the surface of the conductive linear structure 26 to form a carbon nanotube composite linear structure. In step S203, the carbon nanotube composite linear structure is melted to obtain an electron emitter 20.

在熔斷的過程中，設置於奈米碳管管狀結構內部的導電線狀結構26在電流的作用下，或者在電子束、鐳射及電流的共同作用下，該導電線狀結構26及奈米碳管管狀結構處於很高的溫度。當溫度達到一定程度，導電線狀結構26及奈米碳管管狀結構中熔點較低之一將會首先熔斷。若導電線狀結構26首先熔斷，則奈米碳管管狀結構中與導電線狀結構26對應的一點的電阻將會迅速升高，溫度迅速升高，從而使奈米碳管管狀結構及導電線狀結構26在同一點熔斷。若奈米碳管管狀結構先熔斷，則導電線狀結構26中與奈 米碳管管狀結構相對應的一點的電阻將會迅速升高，溫度迅速升高，從而使導電線狀結構26也在該點熔斷，最終導電線狀結構26及奈米碳管管狀結構在同一點熔斷。當所述導電線狀結構26為金屬材料時，在熔斷的過程中，金屬原子發生蒸發，從而使熔斷後的奈米碳管管狀結構的縮口部份內的金屬不存在。 In the process of fusing, the electrically conductive linear structure 26 disposed inside the tubular structure of the carbon nanotubes is under the action of electric current, or under the action of electron beam, laser and current, the electrically conductive linear structure 26 and the nano carbon The tubular structure is at a very high temperature. When the temperature reaches a certain level, one of the lower melting points of the electrically conductive linear structure 26 and the tubular structure of the carbon nanotube will be first melted. If the conductive linear structure 26 is first blown, the electrical resistance of the point corresponding to the conductive linear structure 26 in the tubular structure of the carbon nanotube will rapidly increase, and the temperature rapidly rises, thereby making the tubular structure and the conductive wire of the carbon nanotube. The structure 26 is blown at the same point. If the tubular structure of the carbon nanotube is first melted, the conductive linear structure 26 and the nai The resistance of the corresponding point of the tubular structure of the carbon tube will increase rapidly, and the temperature will rise rapidly, so that the conductive linear structure 26 is also blown at this point, and finally the conductive linear structure 26 and the tubular structure of the carbon nanotube are in the same A little blown. When the electrically conductive linear structure 26 is a metallic material, during the fusing process, the metal atoms are evaporated, so that the metal in the constricted portion of the blown carbon nanotube tubular structure is absent.

可以理解，該奈米碳管管狀結構的第一端102可以通過一導電膠與該行電極120a電連接。該電連接的方式也可以通過分子間力或者其他方式實現。奈米碳管管狀結構與行電極120a之間的位置關係不限，只需確保該奈米碳管管狀結構的第一端102與該行電極120a電連接即可。 It can be understood that the first end 102 of the tubular structure of the carbon nanotube can be electrically connected to the row electrode 120a through a conductive paste. The manner of electrical connection can also be achieved by intermolecular forces or other means. The positional relationship between the tubular structure of the carbon nanotubes and the row electrode 120a is not limited, and it is only necessary to ensure that the first end 102 of the tubular structure of the carbon nanotube is electrically connected to the row electrode 120a.

所述電子發射體10，20可通過植絨法、逐一黏結等方法設置於所述隔離層的通孔170b內作為陰極發射體150a，每個陰極發射體150a可包括一電子發射體10，20或複數電子發射體10，20。複數電子發射體10，20時，相互間隔設置。 The electron emitters 10, 20 may be disposed in the through holes 170b of the isolation layer as a cathode emitter 150a by a flocking method, one by one bonding, or the like, and each cathode emitter 150a may include an electron emitter 10, 20 Or a plurality of electron emitters 10, 20. When the plurality of electron emitters 10, 20 are spaced apart from each other.

分別施加不同電壓給行電極120a、列電極140a及陽極電極180a(一般情況下，行電極120a為接地或零電壓，列電極140a的電壓為幾十伏至幾百伏左右，陽極電極180a的電壓高於列電極140a的電壓)。由於陰極發射體150a包括至少一第一電子發射體10或至少一第二電子發射體20。第一電子發射體10或第二電子發射體20首先在行電極120a、列電極140a的電場作用下發射出電子。該部份所發射出的電子向列電極140a的方向運動，通過列電極140a的通孔170b中發射出去，之後在陽極電極180a之電場作用下，最終到達陽極電極180a。陽極電極180a上塗敷的熒光區域190a與陰極發 射體150a正對設置，該部份電子打在熒光區域190a上發光，從而實現場發射電子器件100a之顯示功能。由於行電極120a之間相互絕緣、列電極140a之間相互絕緣，因此，通過選擇性地在不同的行電極120a及列電極140a之間施加不同的電壓，可控制不同位置的陰極發射體150a發射電子，電子打在陽極電極180a之不同位置，從而使陽極上的熒光區域190a的不同位置發光，使場發射電子器件100a根據需要顯示不同的畫面。 Different voltages are respectively applied to the row electrode 120a, the column electrode 140a, and the anode electrode 180a (generally, the row electrode 120a is grounded or zero voltage, and the voltage of the column electrode 140a is about several tens of volts to several hundreds of volts, and the voltage of the anode electrode 180a Higher than the voltage of the column electrode 140a). The cathode emitter 150a includes at least one first electron emitter 10 or at least one second electron emitter 20. The first electron emitter 10 or the second electron emitter 20 first emits electrons under the action of the electric field of the row electrode 120a and the column electrode 140a. The electrons emitted from the portion move in the direction of the column electrode 140a, are emitted through the through hole 170b of the column electrode 140a, and then finally reach the anode electrode 180a under the action of the electric field of the anode electrode 180a. The fluorescent region 190a and the cathode coated on the anode electrode 180a The emitter 150a is disposed oppositely, and the portion of the electrons is illuminated on the fluorescent region 190a, thereby realizing the display function of the field emission electronic device 100a. Since the row electrodes 120a are insulated from each other and the column electrodes 140a are insulated from each other, the cathode emitter 150a at different positions can be controlled to be emitted by selectively applying different voltages between the different row electrodes 120a and the column electrodes 140a. Electrons, electrons are placed at different positions of the anode electrode 180a, thereby causing different positions of the fluorescent region 190a on the anode to emit light, so that the field emission electronic device 100a displays different pictures as needed.

本發明第一實施例提供的場發射電子器件100a具有以下有益效果：其一，場發射電子器件100a中的電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端延伸出複數電子發射尖端，因此，可有效降低該電子發射體的電場屏蔽效應；其二，所述複數電子發射尖端的尖端狀可增強電子發射體的場增強因子，使電子發射體更易於發射電子，從而提高電子發射體的場發射性能；其三，所述電子發射體具有複數電子發射尖端，因此，電子發射體的電流密度較大，可適當減少場發射電子器件100a中的電子發射體的數量，每個陰極發射體150a可僅包括一電子發射體10、20，從而使場發射電子器件更易於製備。 The field emission electronic device 100a provided by the first embodiment of the present invention has the following beneficial effects: First, the electron emitter in the field emission electronic device 100a includes a carbon nanotube tubular structure, and one end of the carbon nanotube tubular structure Extending out the complex electron emission tip, thereby effectively reducing the electric field shielding effect of the electron emitter; second, the tip of the complex electron emission tip enhances the field enhancement factor of the electron emitter, making the electron emitter easier to emit Electrons, thereby improving the field emission performance of the electron emitter; third, the electron emitter has a complex electron emission tip, and therefore, the current density of the electron emitter is large, and the electron emitter in the field emission electronic device 100a can be appropriately reduced. The number of cathode emitters 150a can include only one electron emitter 10, 20, making field emission electronics easier to prepare.

請參閱圖11及圖12，本發明第二實施例提供一種場發射電子器件100b，該種場發射電子器件100b包括一絕緣基板110b、複數行電極120b、複數隔離體130b、複數列電極140b、複數陰極發射體150b、一陽極基板160b、一陽極電極180b及複數螢光粉區域190b。所述複數行電極120b設置於基板110b的表面。所述複數隔離體130b為垂直於所述行電極120b的條形結構。所述複數隔離體130b 覆蓋部份行電極120b。所述複數列電極140b通過所述隔離體130b支撐並與所述行電極120b電絕緣。所述陰極發射體150b設置於所述行電極120b表面且與該行電極120b電連接。所述複數陰極發射體150b呈矩陣狀分佈。所述陰極發射體150b位於相鄰的兩列電極140b之間，且通過隔離體130b與列電極140b絕緣。所述列電極140b與行電極120b相交的位置對應於螢光粉區域190b。第二實施例中所述的絕緣基板110b、複數行電極120b、複數隔離體130b、複數列電極140b、複數陰極發射體150b、陽極基板160b、陽極電極180b及複數螢光粉區域190b與第一實施例中所述的絕緣基板110a、複數行電極120a、一隔離體130a、複數列電極140a、複數陰極發射體150a、陽極基板160a、陽極電極180a及複數螢光粉區域190a的結構、材料及製備方法均相同。 Referring to FIG. 11 and FIG. 12, a second embodiment of the present invention provides a field emission electronic device 100b. The field emission electronic device 100b includes an insulating substrate 110b, a plurality of row electrodes 120b, a plurality of spacers 130b, and a plurality of column electrodes 140b. A plurality of cathode emitters 150b, an anode substrate 160b, an anode electrode 180b, and a plurality of phosphor regions 190b. The plurality of row electrodes 120b are disposed on a surface of the substrate 110b. The plurality of spacers 130b are strip structures perpendicular to the row electrodes 120b. The plurality of spacers 130b A portion of the row electrode 120b is covered. The plurality of column electrodes 140b are supported by the separator 130b and electrically insulated from the row electrode 120b. The cathode emitter 150b is disposed on a surface of the row electrode 120b and electrically connected to the row electrode 120b. The plurality of cathode emitters 150b are distributed in a matrix. The cathode emitter 150b is located between adjacent columns of electrodes 140b and is insulated from the column electrode 140b by the separator 130b. The position at which the column electrode 140b intersects the row electrode 120b corresponds to the phosphor powder region 190b. The insulating substrate 110b, the plurality of row electrodes 120b, the plurality of spacers 130b, the plurality of columns of electrodes 140b, the plurality of cathode emitters 150b, the anode substrate 160b, the anode electrode 180b, and the plurality of phosphor regions 190b and the first described in the second embodiment The structure and material of the insulating substrate 110a, the plurality of row electrodes 120a, a spacer 130a, the plurality of columns of electrodes 140a, the plurality of cathode emitters 150a, the anode substrate 160a, the anode electrode 180a, and the plurality of phosphor regions 190a described in the embodiments The preparation methods are all the same.

第二實施例的場發射電子器件100b與第一實施例的場發射電子器件100a的結構的區別在於：第一實施例中，所述陰極發射體150a設置於所述隔離體130a及列電極120a的通孔170a及170b內。所述隔離體130a對應於複數陰極發射體150a的位置處形成有複數通孔170a。所述複數列電極140a對應於複數陰極發射體150a的位置處形成有複數通孔170b。所述陰極發射體150a位於隔離體130a及列電極140a的通孔170a及170b內。所述複數陰極發射體150a的位置為所述複數行電極120a及複數列電極140a相交叉的位置。所述複數陰極發射體150a的位置分別對應於所述複數螢光粉區域190a。即所述複數行電極120a及複數列電極140a相交叉的位置對應於一螢光粉區域190a。 The field emission electronic device 100b of the second embodiment is different from the structure of the field emission electronic device 100a of the first embodiment in that, in the first embodiment, the cathode emitter 150a is disposed on the spacer 130a and the column electrode 120a. Inside the through holes 170a and 170b. The spacer 130a is formed with a plurality of via holes 170a at positions corresponding to the plurality of cathode emitters 150a. The plurality of via electrodes 140a are formed with a plurality of via holes 170b at positions corresponding to the plurality of cathode emitters 150a. The cathode emitter 150a is located in the vias 170a and 170b of the spacer 130a and the column electrode 140a. The position of the plurality of cathode emitters 150a is a position at which the plurality of row electrodes 120a and the plurality of column electrodes 140a intersect. The positions of the plurality of cathode emitters 150a correspond to the plurality of phosphor regions 190a, respectively. That is, the position at which the plurality of row electrodes 120a and the plurality of column electrodes 140a intersect corresponds to a phosphor particle region 190a.

第二實施例中，所述隔離體130b與列電極140b均未設置有通孔，所述陰極發射體150b位於相鄰的兩列電極140b之間，所述列電極140b與行電極120b相交的位置對應於螢光粉區域190b。所述陰極發射體150b對應設置於列電極140b的兩側。 In the second embodiment, neither the spacer 130b nor the column electrode 140b is provided with a through hole, the cathode emitter 150b is located between the adjacent two columns of electrodes 140b, and the column electrode 140b intersects with the row electrode 120b. The position corresponds to the phosphor area 190b. The cathode emitters 150b are disposed on opposite sides of the column electrode 140b.

分別施加不同電壓給行電極120b、列電極140b及陽極電極180b(一般情況下，行電極120b為接地或零電壓，列電極140b的電壓為幾十伏至幾百伏左右，陽極電極180b的電壓高於列電極140b的電壓)。對應於每個螢光粉區域190b，設置於所述列電極140b兩側且靠近列電極140b的電子發射體首先在行電極120b、列電極140b的電場作用下發射出電子。該部份電子向列電極140b的方向運動，之後在陽極電極180b的電場作用下，最終到達陽極電極180b。由於熒光區域190b位於列電極140b的正上方，電子在陽極電極180b的作用下，打在陽極電極180b上塗敷的熒光區域190b，從而實現場發射電子器件100b的顯示功能。由於行電極120b之間相互絕緣、列電極140b之間相互絕緣，因此，通過選擇性地在不同的行電極120b及列電極140b之間施加不同的電壓，可控制不同位置的陰極發射體150b發射電子，電子打在透明陽極180b的不同位置，從而使陽極電極180b上的熒光區域190b的不同位置發光，使場發射電子器件100b根據需要顯示不同的畫面。 Different voltages are applied to the row electrode 120b, the column electrode 140b, and the anode electrode 180b (in general, the row electrode 120b is grounded or zero voltage, and the voltage of the column electrode 140b is about several tens of volts to several hundreds of volts, and the voltage of the anode electrode 180b Higher than the voltage of the column electrode 140b). Corresponding to each of the phosphor particles 190b, the electron emitters disposed on both sides of the column electrode 140b and adjacent to the column electrode 140b first emit electrons under the action of the electric field of the row electrode 120b and the column electrode 140b. The portion of the electron moves in the direction of the column electrode 140b, and then reaches the anode electrode 180b under the action of the electric field of the anode electrode 180b. Since the fluorescent region 190b is located directly above the column electrode 140b, electrons are applied to the fluorescent region 190b coated on the anode electrode 180b by the action of the anode electrode 180b, thereby realizing the display function of the field emission electronic device 100b. Since the row electrodes 120b are insulated from each other and the column electrodes 140b are insulated from each other, the cathode emitter 150b can be controlled to be emitted at different positions by selectively applying different voltages between the different row electrodes 120b and the column electrodes 140b. Electrons and electrons are struck at different positions of the transparent anode 180b, thereby causing different positions of the fluorescent regions 190b on the anode electrode 180b to emit light, so that the field emission electronic device 100b displays different screens as needed.

本發明第二實施例提供的場發射電子器件100b進一步地具有以下有益效果：由於列電極140b與熒光區域190b對應設置，因此可有效地利用電子的偏轉作用實現更好地聚焦，同時無需開孔使場發射電子器件100b的工藝更簡單。 The field emission electronic device 100b provided by the second embodiment of the present invention further has the following beneficial effects: since the column electrode 140b is disposed corresponding to the fluorescent region 190b, the deflection of the electron can be effectively utilized to achieve better focusing without opening the hole. The process of field emitting electronic device 100b is made simpler.

請參閱圖13及圖14，本發明第三實施例提供一種場發射電子器件200，包括一絕緣基板202、複數電子發射單元220、複數行電極204與複數列電極206。所述複數行電極204相互平行且等間隔設置於絕緣基板202上。所述複數列電極206相互平行且等間隔設置於絕緣基板202上。所述複數行電極204與複數列電極206相互交叉設置，而且，在行電極204與列電極206交叉處設置有一隔離體216，該隔離體216將行電極204與列電極206電隔離，以防止短路。每二相鄰的行電極204與二相鄰的列電極206形成一網格214，且每個網格214定位一電子發射單元220。 Referring to FIG. 13 and FIG. 14 , a third embodiment of the present invention provides a field emission electronic device 200 including an insulating substrate 202 , a plurality of electron emitting units 220 , a plurality of row electrodes 204 , and a plurality of column electrodes 206 . The plurality of row electrodes 204 are disposed parallel to each other and equally spaced on the insulating substrate 202. The plurality of column electrodes 206 are disposed parallel to each other and equally spaced on the insulating substrate 202. The plurality of row electrodes 204 and the plurality of column electrodes 206 are disposed to cross each other, and a spacer 216 is disposed at a intersection of the row electrode 204 and the column electrode 206. The spacer 216 electrically isolates the row electrode 204 from the column electrode 206 to prevent Short circuit. Each two adjacent row electrodes 204 and two adjacent column electrodes 206 form a grid 214, and each grid 214 is positioned with an electron emission unit 220.

所述複數電子發射單元220對應設置於上述網格214中，且每個網格214中設置一電子發射單元220。每個電子發射單元220包括一陽極電極210，一陰極電極212，一螢光粉層226及一陰極發射體208。該陽極電極210與陰極電極212對應且間隔設置，螢光粉層226設置於陽極電極210的表面。該陰極發射體208設置於陽極電極210與陰極電極212之間，且，陰極發射體208一端與陰極電極212電連接，另一端指向陽極電極210。該陰極發射體208可與絕緣基板202間隔設置或直接設置於絕緣基板202上。其中，當陰極發射體208與絕緣基板202間隔設置，可以增強陰極發射體208的場發射能力。本實施例中，同一行的電子發射單元220中的陽極電極210與同一行電極204電連接，同一列的電子發射單元220中的陰極電極212與同一列電極206電連接。 The plurality of electron emission units 220 are correspondingly disposed in the grid 214, and an electron emission unit 220 is disposed in each of the grids 214. Each electron-emitting unit 220 includes an anode electrode 210, a cathode electrode 212, a phosphor layer 226, and a cathode emitter 208. The anode electrode 210 is disposed corresponding to and spaced apart from the cathode electrode 212, and the phosphor powder layer 226 is disposed on the surface of the anode electrode 210. The cathode emitter 208 is disposed between the anode electrode 210 and the cathode electrode 212, and one end of the cathode emitter 208 is electrically connected to the cathode electrode 212, and the other end is directed to the anode electrode 210. The cathode emitter 208 may be spaced apart from the insulating substrate 202 or disposed directly on the insulating substrate 202. Wherein, when the cathode emitter 208 is spaced apart from the insulating substrate 202, the field emission capability of the cathode emitter 208 can be enhanced. In the present embodiment, the anode electrode 210 in the electron emission unit 220 of the same row is electrically connected to the same row electrode 204, and the cathode electrode 212 in the electron emission unit 220 of the same row is electrically connected to the same column electrode 206.

本發明第三實施例提供的場發射電子器件200的結構與本發明第一實施例及第二實施例提供的場發射電子器件100a、100b的結構 的主要區別在於：第三實施例中陰極發射體208平行於絕緣基板202，第一實施例及第二實施例提供的場發射電子器件100a、100b中陰極發射體150a及陰極發射體150b垂直於絕緣基板110a及絕緣基板110b。 The structure of the field emission electronic device 200 provided by the third embodiment of the present invention and the structures of the field emission electronic devices 100a, 100b provided by the first embodiment and the second embodiment of the present invention The main difference is that the cathode emitter 208 is parallel to the insulating substrate 202 in the third embodiment, and the cathode emitter 150a and the cathode emitter 150b in the field emission electronic devices 100a, 100b provided in the first embodiment and the second embodiment are perpendicular to The insulating substrate 110a and the insulating substrate 110b.

所述的絕緣基板202為一絕緣基板，如陶瓷基板、玻璃基板、樹脂基板、石英基板等。所述絕緣基板202的大小與厚度不限，本領域技術人員可以根據實際需要選擇。本實施例中，所述絕緣基板202優選為一玻璃基板，其厚度大於1毫米，邊長大於1釐米。 The insulating substrate 202 is an insulating substrate such as a ceramic substrate, a glass substrate, a resin substrate, a quartz substrate or the like. The size and thickness of the insulating substrate 202 are not limited, and those skilled in the art can select according to actual needs. In this embodiment, the insulating substrate 202 is preferably a glass substrate having a thickness greater than 1 mm and a side length greater than 1 cm.

所述行電極204與列電極206為導電體，如金屬層等。本實施例中，該複數行電極204與複數列電極206優選為採用導電漿料印製的平面導電體，且該複數行電極204的行間距為50微米~2釐米，複數列電極206的列間距為50微米~2釐米。該行電極204與列電極206的寬度為30微米~100微米，厚度為10微米~50微米。本實施例中，該行電極204與列電極206的交叉角度為10度到90度，優選為90度。本實施例中，可通過絲網印刷法將導電漿料印製於絕緣基板202上製備行電極204與列電極206。該導電漿料的成分包括金屬粉、低熔點玻璃粉及黏結劑。其中，該金屬粉優選為銀粉，該黏結劑優選為松油醇或乙基纖維素。該導電漿料中，金屬粉的重量比為50~90%，低熔點玻璃粉的重量比為2~10%，黏結劑的重量比為8~40%。 The row electrode 204 and the column electrode 206 are electrical conductors such as a metal layer or the like. In this embodiment, the plurality of row electrodes 204 and the plurality of column electrodes 206 are preferably planar conductors printed with a conductive paste, and the row spacing of the plurality of row electrodes 204 is 50 micrometers to 2 centimeters, and the columns of the plurality of column electrodes 206 are arranged. The spacing is 50 microns to 2 cm. The row electrode 204 and the column electrode 206 have a width of 30 micrometers to 100 micrometers and a thickness of 10 micrometers to 50 micrometers. In this embodiment, the intersection angle of the row electrode 204 and the column electrode 206 is 10 degrees to 90 degrees, preferably 90 degrees. In this embodiment, the row electrode 204 and the column electrode 206 can be prepared by printing a conductive paste on the insulating substrate 202 by a screen printing method. The composition of the conductive paste includes metal powder, low-melting glass powder, and a binder. Among them, the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50 to 90%, the weight ratio of the low melting point glass powder is 2 to 10%, and the weight ratio of the binder is 8 to 40%.

所述陰極電極212與陽極電極210為導電體，如金屬層等。本實施例中，該陰極電極212與陽極電極210均為平面導電體，其尺寸依據網格214的尺寸決定。該陰極電極212及陽極電極210直接與上 述電極連接，從而實現電連接。所述陰極電極212與陽極電極210的長度為20微米~1.5釐米，寬度為30微米~1釐米，厚度為10微米~500微米。優選地，所述陰極電極212與陽極電極210的長度為100微米~700微米，寬度為50微米~500微米，厚度為20微米~100微米。本實施例中，該陰極電極212與陽極電極210的材料為導電漿料，通過絲網印刷法印製於絕緣基板202上。該導電漿料的成分與上述電極所用的導電漿料的成分相同。 The cathode electrode 212 and the anode electrode 210 are conductors such as a metal layer or the like. In this embodiment, the cathode electrode 212 and the anode electrode 210 are both planar conductors, and the size thereof is determined according to the size of the grid 214. The cathode electrode 212 and the anode electrode 210 directly and above The electrodes are connected to achieve electrical connection. The cathode electrode 212 and the anode electrode 210 have a length of 20 micrometers to 1.5 centimeters, a width of 30 micrometers to 1 centimeter, and a thickness of 10 micrometers to 500 micrometers. Preferably, the cathode electrode 212 and the anode electrode 210 have a length of 100 micrometers to 700 micrometers, a width of 50 micrometers to 500 micrometers, and a thickness of 20 micrometers to 100 micrometers. In this embodiment, the material of the cathode electrode 212 and the anode electrode 210 is a conductive paste, which is printed on the insulating substrate 202 by screen printing. The composition of the conductive paste is the same as the composition of the conductive paste used for the above electrode.

所述陰極發射體208包括至少一平行且等間隔排列的電子發射體218。該電子發射體218可為第一實施例中提供的電子發射體10，20。該電子發射體218為一奈米碳管管狀結構，該奈米碳管管狀結構平行於絕緣基板202的表面。該電子發射體218具有一電子發射端222。該電子發射端222指向陽極電極210。 The cathode emitter 208 includes at least one parallel and equally spaced array of electron emitters 218. The electron emitter 218 can be the electron emitters 10, 20 provided in the first embodiment. The electron emitter 218 is a carbon nanotube tubular structure that is parallel to the surface of the insulating substrate 202. The electron emitter 218 has an electron emission end 222. The electron emission end 222 is directed to the anode electrode 210.

在製備過程中，將至少一奈米碳管預製體或至少一奈米碳管複合線狀結構鋪設覆蓋於陰極電極212與陽極電極210上，切割奈米碳管預製體，使陰極電極212與陽極電極210之間的奈米碳管預製體或奈米碳管複合線狀結構熔斷，形成至少一電子發射體固定於陰極電極212上作為陰極發射體208。所述切割奈米碳管預製體的方法為鐳射燒蝕法、電子束掃描法或加熱熔斷法。 In the preparation process, at least one carbon nanotube preform or at least one carbon nanotube composite linear structure is laid on the cathode electrode 212 and the anode electrode 210, and the carbon nanotube preform is cut to make the cathode electrode 212 and The carbon nanotube preform or the carbon nanotube composite linear structure between the anode electrodes 210 is melted to form at least one electron emitter fixed on the cathode electrode 212 as the cathode emitter 208. The method of cutting the carbon nanotube preform is a laser ablation method, an electron beam scanning method or a heat melting method.

請參閱圖15，本發明第四實施例提供一種場發射電子器件300，該場發射電子器件300的結構與第二實施例中的場發射電子器件200的結構相似，其區別在於，採用一柵極電極310取代第二實施例中的陽極電極210，且第三實施例中的場發射電子器件300進一步包括一陽極裝置330。 Referring to FIG. 15, a fourth embodiment of the present invention provides a field emission electronic device 300. The structure of the field emission electronic device 300 is similar to that of the field emission electronic device 200 in the second embodiment, and the difference is that a gate is used. The electrode electrode 310 replaces the anode electrode 210 in the second embodiment, and the field emission electronic device 300 in the third embodiment further includes an anode device 330.

所述場發射電子器件300包括複數行電極306及複數列電極(圖未示)。所述複數行電極306及複數列電極形成複數網格。複數電子發射單元320設置於網格內。 The field emission electronic device 300 includes a plurality of row electrodes 306 and a plurality of column electrodes (not shown). The plurality of row electrodes 306 and the plurality of column electrodes form a complex grid. The complex electron emission unit 320 is disposed within the grid.

所述電子發射單元320包括一柵極電極310，一陰極電極312，及一陰極發射體308。所述柵極電極310與一列電極電連接。 The electron emission unit 320 includes a gate electrode 310, a cathode electrode 312, and a cathode emitter 308. The gate electrode 310 is electrically connected to a column of electrodes.

該柵極電極310與陰極電極312對應且間隔設置。該陰極發射體308設置於柵極電極310與陰極電極312之間，且，陰極發射體308一端與陰極電極312電連接，另一端指向柵極電極310。該陰極發射體308可與絕緣基板302間隔設置或直接設置於絕緣基板302上。其中，當陰極發射體308與絕緣基板302間隔設置，可以增強陰極發射體308的場發射能力。本實施例中，同一行的電子發射單元320中的柵極電極310與同一行電極306電連接，同一列的電子發射單元320中的陰極電極312與同一列電極電連接。 The gate electrode 310 corresponds to the cathode electrode 312 and is spaced apart. The cathode emitter 308 is disposed between the gate electrode 310 and the cathode electrode 312, and one end of the cathode emitter 308 is electrically connected to the cathode electrode 312, and the other end is directed to the gate electrode 310. The cathode emitter 308 may be spaced apart from the insulating substrate 302 or disposed directly on the insulating substrate 302. Wherein, when the cathode emitter 308 is spaced apart from the insulating substrate 302, the field emission capability of the cathode emitter 308 can be enhanced. In this embodiment, the gate electrode 310 in the electron emission unit 320 of the same row is electrically connected to the same row electrode 306, and the cathode electrode 312 in the electron emission unit 320 of the same row is electrically connected to the same column electrode.

所述陽極裝置330包括一玻璃基板332，一透明陽極334及塗覆於透明陽極334上的螢光粉區域336。所述透明陽極334可為氧化銦錫薄膜。所述電子發射單元320與所述螢光粉區域336相對設置。 The anode device 330 includes a glass substrate 332, a transparent anode 334 and a phosphor powder region 336 coated on the transparent anode 334. The transparent anode 334 can be an indium tin oxide film. The electron emission unit 320 is disposed opposite to the phosphor powder region 336.

所述陰極發射體308包括至少一電子發射體，該複數電子發射體的結構可為第一實施例中的電子發射體10，20。 The cathode emitter 308 includes at least one electron emitter, and the structure of the complex electron emitter may be the electron emitters 10, 20 in the first embodiment.

場發射電子器件300在應用過程中，分別給陰極電極312、柵極電極310及陽極334上施加不同的電壓。所述場發射電子器件300的陰極發射體308在陰極電極312及柵極電極310的電場的作用下發射出電子。該部份電子在陽極334的電場作用下飛向陽極334，並 打在塗覆於透明陽極334上的螢光粉區域336上而發光。通過選擇性給不同的陰極電極312、柵極電極310及陽極334上施加電壓，可實現所述螢光粉區域336的發光區域不同從而顯示不同的畫面。 The field emission electronics 300 applies different voltages to the cathode electrode 312, the gate electrode 310, and the anode 334, respectively, during application. The cathode emitter 308 of the field emission electronic device 300 emits electrons under the action of the electric field of the cathode electrode 312 and the gate electrode 310. The portion of electrons fly toward the anode 334 under the electric field of the anode 334, and The phosphor is applied to the phosphor powder region 336 coated on the transparent anode 334 to emit light. By selectively applying voltages to the different cathode electrodes 312, gate electrodes 310, and anodes 334, the light-emitting regions of the phosphor powder regions 336 can be made different to display different screens.

本發明提供的場發射電子器件具有以下優點：其一，本發明提供的場發射電子器件中的電子發射體包括複數電子發射尖端，因此電子發射體具有較大的發射電流，該場發射電子器件也具有較大的工作電流；其二，場發射電子器件中的電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端延伸出所述複數電子發射尖端，因此，可有效降低該複數電子發射體的電場屏蔽效應；其三，所述複數電子發射尖端的尖端狀可增強電子發射體的場增強因子，使電子發射體更易於發射電子，從而提高電子發射體的場發射性能；其四，所述電子發射體具有複數電子發射尖端，因此，電子發射體的電流密度較大，可適當減少場發射電子器件中的電子發射體的數量，使場發射電子器件更加易於製備。 The field emission electronic device provided by the invention has the following advantages: First, the electron emitter in the field emission electronic device provided by the invention comprises a plurality of electron emission tips, so that the electron emitter has a large emission current, and the field emission electronic device Also having a large operating current; second, the electron emitter in the field emission electronic device comprises a carbon nanotube tubular structure, one end of the tubular structure of the carbon nanotube extending out of the plurality of electron emitting tips, therefore, The electric field shielding effect of the complex electron emitter can be effectively reduced; thirdly, the tip shape of the complex electron emission tip can enhance the field enhancement factor of the electron emitter, making the electron emitter easier to emit electrons, thereby improving the electron emitter. Field emission performance; Fourthly, the electron emitter has a plurality of electron emission tips. Therefore, the current density of the electron emitter is large, and the number of electron emitters in the field emission electronic device can be appropriately reduced, so that the field emission electronic device is more Easy to prepare.

綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

Claims (16)

一種場發射電子器件，其包括：一絕緣基板；複數行電極相互平行且間隔設置於所述絕緣基板的表面；複數陰極發射體設置於所述行電極表面，且呈矩陣狀分佈；一隔離層，所述隔離層設置於所述絕緣基板表面且覆蓋部份所述行電極；複數列電極相互平行且間隔設置於所述隔離層的表面，該複數列電極通過所述隔離層支撐且與所述複數行電極異面垂直且交叉設置；一陽極裝置，該陽極裝置包括一陽極玻璃基板、一陽極電極及複數螢光粉區域，上述行電極及上述列電極相交叉的位置與所述複數螢光粉區域一一對應設置；其改良在於：所述陰極發射體包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述行電極電連接，所述奈米碳管管狀結構的另一端向所述陽極電極延伸作為所述電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a plurality of row electrodes are parallel to each other and spaced apart from each other on a surface of the insulating substrate; a plurality of cathode emitters are disposed on the surface of the row electrodes and distributed in a matrix; an isolation layer The isolation layer is disposed on the surface of the insulating substrate and covers a portion of the row electrode; the plurality of column electrodes are parallel to each other and spaced apart from the surface of the isolation layer, and the plurality of columns are supported by the isolation layer and The plurality of row electrodes are vertically and crosswise disposed; an anode device comprising an anode glass substrate, an anode electrode and a plurality of phosphor regions, wherein the row electrode and the column electrode intersect with each other The light powder regions are arranged one by one; the improvement is that the cathode emitter comprises at least one electron emitter, the electron emitter comprises a carbon nanotube tubular structure, and one end of the tubular structure of the carbon nanotube Electrically connected to the row electrode, the other end of the tubular structure of the carbon nanotube extends toward the anode electrode as electron emission of the electron emitter The tubular structure of the carbon nanotube has a hollow linear axis, and the tubular structure of the carbon nanotube is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the tubular structure of the carbon nanotube A plurality of electron-emitting tips extend along one end of the linear axis. 如請求項1所述之場發射電子器件，其中，在每個所述行電極及所述列電極相交叉的位置，所述隔離層與所述列電極均設置有通 孔，所述陰極發射體設置於所述通孔內與所述行電極電連接。 The field emission electronic device of claim 1, wherein the isolation layer and the column electrode are both provided at a position where each of the row electrode and the column electrode intersect And a cathode emitter disposed in the through hole and electrically connected to the row electrode. 如請求項1所述之場發射電子器件，其中，所述隔離層包括複數相互平行且間隔設置的隔離體，所述複數隔離體與所述複數行電極垂直且交叉設置，所述複數列電極與所述複數隔離體一一對應且層疊設置。 The field emission electronic device of claim 1, wherein the isolation layer comprises a plurality of spacers arranged in parallel and spaced apart from each other, the plurality of spacers being perpendicular and intersecting with the plurality of row electrodes, the plurality of column electrodes One-to-one correspondence with the plurality of spacers and stacked. 如請求項3所述之場發射電子器件，其中，在每個所述行電極及所述列電極相交叉的位置，所述陰極發射體沿所述行電極的延伸方向設置於所述列電極的兩側，並與所述行電極電連接。 The field emission electronic device of claim 3, wherein, at a position where each of the row electrodes and the column electrodes intersect, the cathode emitter is disposed at the column electrode along an extending direction of the row electrode Both sides are electrically connected to the row electrodes. 如請求項1所述之場發射電子器件，其中，所述奈米碳管管狀結構中大多數奈米碳管圍繞所述中空的線狀軸心螺旋延伸，在螺旋方向相鄰的奈米碳管之間通過凡得瓦力首尾相連。 The field emission electronic device of claim 1, wherein a majority of the carbon nanotubes in the tubular structure of the carbon nanotubes extend helically around the hollow linear axis, and the nanocarbons adjacent in the spiral direction The tubes are connected end to end by Van der Waals. 如請求項1所述之場發射電子器件，其中，所述奈米碳管管狀結構具有所述複數電子發射尖端的一端為類圓錐形。 The field emission electronic device of claim 1, wherein the carbon nanotube tubular structure has one end of the plurality of electron emission tips that is conical. 如請求項1所述之場發射電子器件，其中，所述奈米碳管管狀結構具有所述複數電子發射尖端的一端具有一開口，所述奈米碳管管狀結構從開口處延伸出複數奈米碳管束作為複數電子發射尖端。 The field emission electronic device of claim 1, wherein the carbon nanotube tubular structure has an opening at one end of the plurality of electron emission tips, and the tubular structure of the carbon nanotube extends from the opening to a plurality of The carbon nanotube bundle serves as a complex electron emission tip. 如請求項1所述之場發射電子器件，其中，所述複數電子發射尖端圍繞所述線狀軸心呈環狀排列，且向所述陽極延伸。 The field emission electronic device of claim 1, wherein the plurality of electron emission tips are arranged in a ring shape around the linear axis and extend toward the anode. 如請求項1所述之場發射電子器件，其中，所述複數電子發射尖端圍繞所述線狀軸心呈發散狀延伸。 The field emission electronic device of claim 1, wherein the plurality of electron emission tips extend in a divergent shape around the linear axis. 如請求項1所述之場發射電子器件，其中，所述每個電子發射尖端包括複數基本平行的奈米碳管，所述每個電子發射尖端的中心位置突出有一根奈米碳管。 The field emission electronic device of claim 1, wherein each of the electron emission tips comprises a plurality of substantially parallel carbon nanotubes, and a center of each of the electron emission tips protrudes from a carbon nanotube. 如請求項10所述之場發射電子器件，其中，所述複數電子發射尖端中相鄰的二電子發射尖端中突出的奈米碳管之間的間距與突出的奈米碳管的直徑的比值為20：1至500：1。 The field emission electronic device of claim 10, wherein a ratio of a pitch between the protruding carbon nanotubes in the adjacent two electron emission tips of the plurality of electron emission tips to a diameter of the protruding carbon nanotubes It is 20:1 to 500:1. 一種場發射電子器件，其包括：一絕緣基板；複數行電極與列電極分別平行且等間隔設置於所述絕緣基板表面，該複數行電極與該複數列電極相互交叉設置且電絕緣，每二相鄰的所述行電極與二相鄰的所述列電極形成一網格；複數電子發射單元，每個電子發射單元對應一網格設置，該每個電子發射單元進一步包括間隔設置的一陰極電極與一陽極電極，且該陽極電極及該陰極電極分別與上述行電極與上述列電極電連接，及一陰極發射體，該陰極發射體與所述陰極電極電連接；其改良在於，所述陰極發射體包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述陰極電極電連接，所述奈米碳管管狀結構的另一端向所述陽極電極延伸作為所述電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device includes: an insulating substrate; a plurality of row electrodes and column electrodes are respectively disposed in parallel and equally spaced on the surface of the insulating substrate, and the plurality of row electrodes and the plurality of column electrodes are disposed to be mutually intersected and electrically insulated, and each of the two The adjacent row electrodes form a grid with two adjacent column electrodes; a plurality of electron emission units each corresponding to a grid arrangement, the electron emission units further including a cathode disposed at intervals An electrode and an anode electrode, wherein the anode electrode and the cathode electrode are electrically connected to the row electrode and the column electrode, respectively, and a cathode emitter electrically connected to the cathode electrode; The cathode emitter comprises at least one electron emitter, the electron emitter comprises a carbon nanotube tubular structure, one end of the tubular structure of the carbon nanotube is electrically connected to the cathode electrode, and the tubular structure of the carbon nanotube The other end extends toward the anode electrode as an electron-emitting end of the electron emitter, and the carbon nanotube tubular structure has a hollow line An axial center, wherein the carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the carbon nanotube tubular structure extends at a plurality of electron emission tips along one end of the linear axis . 如請求項12所述之場發射電子器件，其中，一螢光粉層設置在所述陽極電極表面。 The field emission electronic device of claim 12, wherein a phosphor layer is disposed on the surface of the anode electrode. 一種場發射電子器件，其包括：一絕緣基板；複數行電極與列電極分別平行且等間隔設置於所述絕緣基板表面 ，該複數行電極與該複數列電極相互交叉設置且電絕緣，每二相鄰的所述行電極與二相鄰的所述列電極形成一網格；複數電子發射單元，每個電子發射單元對應一網格設置，該每個電子發射單元進一步包括間隔設置的一陰極電極與一柵極電極，且該柵極電極及陰極電極分別與上述行電極與上述列電極電連接，及一陰極發射體，該陰極發射體與所述陰極電極電連接；一陽極裝置，該陽極裝置包括一玻璃基板，一透明陽極及塗覆於該透明陽極上的複數螢光粉區域，每個螢光粉區域對應一電子發射單元；其改良在於，所述陰極發射體包括至少一電子發射體，所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述陰極電極電連接，所述奈米碳管管狀結構的另一端向所述柵極電極延伸作為所述電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構沿所述線狀軸心的一端延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a plurality of row electrodes and column electrodes are respectively disposed in parallel and equally spaced on the surface of the insulating substrate The plurality of row electrodes and the plurality of column electrodes are disposed across each other and electrically insulated, and each of the two adjacent row electrodes forms a grid with two adjacent column electrodes; a plurality of electron emission units, each of the electron emission units Corresponding to a grid arrangement, each of the electron-emitting units further includes a cathode electrode and a gate electrode disposed at intervals, and the gate electrode and the cathode electrode are electrically connected to the row electrode and the column electrode, respectively, and a cathode emission The cathode emitter is electrically connected to the cathode electrode; an anode device comprising a glass substrate, a transparent anode and a plurality of phosphor particles coated on the transparent anode, each phosphor powder region Corresponding to an electron-emitting unit; the improvement is that the cathode emitter comprises at least one electron emitter, the electron emitter comprises a carbon nanotube tubular structure, one end of the nanotube structure and the cathode An electrode is electrically connected, and the other end of the tubular structure of the carbon nanotube extends toward the gate electrode as an electron emission end of the electron emitter, the carbon nanotube The tubular structure has a hollow linear axis, and the carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and the carbon nanotube tubular structure is along the linear axis One end extends beyond the complex electron emission tip. 一種場發射電子器件，其包括：一絕緣基板；一第一導電體設置在所述絕緣基板表面；複數電子發射體與所述第一導電體電性連接；及一第二導電體，該第二導電體與所述第一導電體空間間隔設置且電絕緣，一電場施加在所述第一導電體與所述第二導電體之間，其改良在於：所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述第一導電體電連接，所述奈米碳管 管狀結構的另一端向所述第二導電體延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構的一端與所述陰極電極電性連接，所述奈米碳管管狀結構的另一端向所述柵極延伸並延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a first electrical conductor disposed on a surface of the insulating substrate; a plurality of electron emitters electrically connected to the first electrical conductor; and a second electrical conductor The two electrical conductors are spaced apart from the first electrical conductor and electrically insulated, and an electric field is applied between the first electrical conductor and the second electrical conductor. The improvement is that the electron emitter comprises a nanometer. a tubular structure of carbon nanotubes, one end of the tubular structure of the carbon nanotubes being electrically connected to the first electrical conductor, the carbon nanotube The other end of the tubular structure extends toward the second electrical conductor as an electron-emitting end of the electron emitter, the tubular structure of the carbon nanotube has a hollow linear axis, and the tubular structure of the carbon nanotube is a complex a carbon nanotube is formed around the hollow linear axis, one end of the tubular structure of the carbon nanotube is electrically connected to the cathode electrode, and the other end of the tubular structure of the carbon nanotube extends toward the gate and Extend the complex electron emission tip. 一種場發射電子器件，其包括：一絕緣基板；一第一導電體與一第二導電體相互間隔設置且設置在所述絕緣基板表面，一電場施加在所述第一導電體與所述第二導電體之間；及複數電子發射體與所述第一導電體電性連接；其改良在於：所述電子發射體包括一奈米碳管管狀結構，所述奈米碳管管狀結構的一端與所述第一導電體電連接，所述奈米碳管管狀結構的另一端向所述第二導電體延伸作為電子發射體的電子發射端，所述奈米碳管管狀結構具有一中空的線狀軸心，所述奈米碳管管狀結構為複數奈米碳管圍繞該中空的線狀軸心組成，所述奈米碳管管狀結構的一端與所述陰極電極電性連接，所述奈米碳管管狀結構的另一端向所述柵極延伸並延伸出複數電子發射尖端。 A field emission electronic device comprising: an insulating substrate; a first electrical conductor and a second electrical conductor are spaced apart from each other and disposed on a surface of the insulating substrate, an electric field is applied to the first electrical conductor and the first And between the two electrical conductors; and the plurality of electron emitters are electrically connected to the first electrical conductor; the improvement is that the electron emitter comprises a tubular structure of carbon nanotubes, and one end of the tubular structure of the carbon nanotubes Electrically connected to the first electrical conductor, the other end of the tubular structure of the carbon nanotube extends toward the second electrical conductor as an electron emitting end of the electron emitter, and the tubular structure of the carbon nanotube has a hollow a linear axis, the carbon nanotube tubular structure is composed of a plurality of carbon nanotubes surrounding the hollow linear axis, and one end of the carbon nanotube tubular structure is electrically connected to the cathode electrode, The other end of the tubular structure of the carbon nanotube extends toward the gate and extends beyond the plurality of electron-emitting tips.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
US6794814B2 (en) * 2001-02-16 2004-09-21 Samsung Sdi Co., Ltd. Field emission display device having carbon nanotube emitter
TW200616000A (en) * 2004-11-12 2006-05-16 Hon Hai Prec Ind Co Ltd Field emission cathode and field emission device using same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102298A1 (en) * 1999-11-05 2001-05-23 Iljin Nanotech Co., Ltd. Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof
US6794814B2 (en) * 2001-02-16 2004-09-21 Samsung Sdi Co., Ltd. Field emission display device having carbon nanotube emitter
TW200616000A (en) * 2004-11-12 2006-05-16 Hon Hai Prec Ind Co Ltd Field emission cathode and field emission device using same

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