TWI425553B - Method for making carbon nantoube wire tip and method for making field emission structure - Google Patents
Method for making carbon nantoube wire tip and method for making field emission structure Download PDFInfo
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本發明涉及一種奈米碳管線尖端之製備方法以及具有該奈米碳管線尖端的場發射結構之製備方法。 The invention relates to a method for preparing a tip of a carbon carbon pipeline and a method for preparing a field emission structure having the tip of the carbon carbon pipeline.
場發射電子源於低溫或者室溫下工作，與電真空器件中之熱發射電子源相比具有能耗低、回應速度快、單色性好、電流密度大以及吸放氣少等優點，因此用場發射電子源替代電真空器件中之熱發射電子源成為了人們研究的一個熱點。 The field emission electrons are operated at low temperature or room temperature, and have the advantages of low energy consumption, fast response speed, good monochromaticity, high current density, and low suction and release gas compared with the thermal emission electron source in the electric vacuum device. The use of field emission electron sources to replace the heat-emitting electron sources in electric vacuum devices has become a hot topic.
奈米碳管(Carbon Nanotube,CNT)係一種新型碳材料，由日本研究人員Iijima於1991年發現，請參見"Helical Microtubules of Graphitic Carbon",S.Iijima,Nature,1991,vol.354,p56-58。奈米碳管具有極優異之導電性能、良好之化學穩定性和大的長徑比，且其具有幾乎接近理論極限的尖端表面積(尖端表面積愈小，其局部電場愈集中)，因而奈米碳管於場發射真空電子源領域具有潛在的應用前景。目前的研究表明，奈米碳管係已知的最好之場發射材料之一，它的尖端尺寸只有幾奈米至幾十奈米，具有低的開啟電壓，可傳輸極大的電流密度，並且電流穩定，使用壽命長，因而非常適合作為一種極佳的電子源，應用到場發射顯示器中。 Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher Iijima in 1991. See "Helical Microtubules of Graphitic Carbon", S.Iijima, Nature, 1991, vol. 354, p56- 58. The carbon nanotubes have excellent electrical conductivity, good chemical stability and large aspect ratio, and have a tip surface area close to the theoretical limit (the smaller the tip surface area, the more concentrated the local electric field), thus the nanocarbon It has potential application prospects in the field of field emission vacuum electron source. Current research shows that the carbon nanotube system is one of the best field emission materials known, its tip size is only a few nanometers to tens of nanometers, has a low turn-on voltage, can transmit a very large current density, and The current is stable and the service life is long, so it is very suitable as an excellent electron source for field emission displays.
然而，奈米碳管為一微觀結構，比較難於應用到各種領域中。宏觀的奈米碳管結構相對比較容易進行實際應用。惟，如何得到發射性質優良的宏觀之奈米碳管場發射體係奈米碳管場發射應用的一個重要環節。 However, the carbon nanotubes are a microstructure and are difficult to apply to various fields. The macroscopic carbon nanotube structure is relatively easy to use in practical applications. However, how to obtain an important part of the nano-carbon nanotube field emission application of the macro-nano carbon nanotube field emission system with excellent emission properties.
有鑒於此，確有必要提供一種可以用於發射電子的奈米碳管線尖端之製備方法，以及應用該奈米碳管線尖端的場發射結構之製備方法。 In view of this, it is indeed necessary to provide a method of preparing a nanocarbon pipeline tip that can be used for emitting electrons, and a method of preparing a field emission structure using the tip of the nanocarbon pipeline.
一種奈米碳管線尖端之製備方法，其包括：提供一奈米碳管線；以及僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光燒斷所述奈米碳管線，且形成一錐形奈米碳管線尖端。 A method for preparing a tip of a carbon carbon pipeline, comprising: providing a nano carbon line; and using only laser light having a scanning power of 1 watt or more and less than 10 watts, and a scanning speed of less than 200 mm/second to blow the nanometer A carbon carbon line and forming a tapered carbon carbon line tip.
一種奈米碳管線尖端之製備方法，其包括：提供複數奈米碳管線；以及僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光按照一預定路線依次燒斷所述複數奈米碳管線，形成複數錐形奈米碳管線尖端。 A method for preparing a tip of a carbon carbon pipeline, comprising: providing a plurality of nano carbon pipelines; and using only laser light having a scanning power of 1 watt or more and less than 10 watts, and a scanning speed of less than 200 mm/second according to a predetermined route The plurality of carbon nanotubes are blown to form a tip of a plurality of tapered carbon nanotubes.
一種場發射結構之製備方法，其包括：提供一奈米碳管線、一第一電極以及一與該第一電極間隔設置的第二電極；將所述奈米碳管線的兩端分別固定於所述第一電極及第二電極；以及僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光燒斷所述奈米碳管線，且於奈米碳管線的燒斷處形成一錐形奈米碳管線尖端。 A method for preparing a field emission structure, comprising: providing a nano carbon line, a first electrode, and a second electrode spaced apart from the first electrode; fixing the two ends of the nano carbon line to the respective Depicting the first electrode and the second electrode; and using only laser light having a scanning power of 1 watt or more and less than 10 watts, and a scanning speed of less than 200 mm/second to blow the nanocarbon line, and in the carbon nanotube line The tapped portion forms a tapered carbon carbon line tip.
與先前技術相比較，本發明提供之奈米碳管線尖端之製備方法可 以比較容易地製備出錐形的奈米碳管線尖端，該錐形的奈米碳管線尖端可以作為電子發射體的尖端，使得該電子發射體點尖端表面會出現電力線的匯聚，從而擁有較大的電場強度，進而使得所述發射體中之電子比較容易逸出。本發明提供之奈米碳管線尖端之製備方法可以實現批量製備所述奈米碳管線尖端。本發明提供之場發射結構之製備方法使得場發射結構的製造工序更加簡單，而且電子發射體的尖端和其他電極之間的距離更容易控制。 Compared with the prior art, the preparation method of the nano carbon line tip provided by the present invention can be In order to prepare a taper nano carbon line tip relatively easily, the tapered nano carbon line tip can serve as a tip end of the electron emitter, so that the electron emitter body tip surface may have a convergence of power lines, thereby having a larger The electric field strength, in turn, makes the electrons in the emitter easier to escape. The preparation method of the nano carbon line tip provided by the invention can realize the batch preparation of the nano carbon line tip. The method of fabricating the field emission structure provided by the present invention makes the manufacturing process of the field emission structure simpler, and the distance between the tip of the electron emitter and other electrodes is more easily controlled.
12；22‧‧‧奈米碳管線 12;22‧‧Non carbon pipeline
122；222‧‧‧奈米碳管線尖端 122; 222‧‧‧Nano carbon line tip
14；24‧‧‧雷射光 14;24‧‧‧Laser light
124；224‧‧‧預定位置 124;224‧‧‧Predetermined location
226‧‧‧發射體 226‧‧‧ emitter
26‧‧‧第一電極 26‧‧‧First electrode
28‧‧‧第二電極 28‧‧‧second electrode
20‧‧‧場發射結構 20‧‧‧ Field launch structure
第1圖係本發明實施例提供之奈米碳管線尖端的製作工藝流程圖。 FIG. 1 is a flow chart showing a manufacturing process of a tip of a carbon carbon pipeline provided by an embodiment of the present invention.
第2圖係本發明實施例採用的奈米碳管線的掃描電鏡照片。 Figure 2 is a scanning electron micrograph of a nanocarbon pipeline used in an embodiment of the present invention.
第3圖係具有毛刺狀的奈米碳管線尖端的透射電鏡照片。 Figure 3 is a transmission electron micrograph of the tip of a burr-like nanocarbon line.
第4圖係由本發明實施例提供之斷開的奈米碳管線的掃描電鏡照片，且該斷開的奈米碳管線具有一錐形奈米碳管線尖端。 Figure 4 is a scanning electron micrograph of a broken nanocarbon line provided by an embodiment of the present invention, and the broken nanocarbon line has a tapered carbon carbon line tip.
第5圖係圖4中之錐形奈米碳管線尖端的掃描電鏡放大照片。 Figure 5 is a SEM magnified photograph of the tip of a tapered nanocarbon line in Figure 4.
第6圖係圖4中之錐形奈米碳管線尖端的掃描電鏡照片。 Figure 6 is a scanning electron micrograph of the tip of a tapered nanocarbon line in Figure 4.
第7圖係圖4中之錐形奈米碳管線尖端的高倍透射電鏡照片。 Figure 7 is a high power transmission electron micrograph of the tip of a tapered nanocarbon line in Figure 4.
第8圖係由本發明實施例製備之錐形奈米碳管線尖端的發射性能圖。 Figure 8 is a graph showing the emission properties of the tip of a tapered nanocarbon pipeline prepared by an embodiment of the present invention.
第9圖係本發明實施例提供之場發射結構之製備工藝流程圖。 Figure 9 is a flow chart showing the preparation process of the field emission structure provided by the embodiment of the present invention.
第10圖係於不同的條件下，採用本發明實施例製備之場發射結構的照片。 Figure 10 is a photograph of a field emission structure prepared in accordance with an embodiment of the present invention under different conditions.
第11圖係由本發明實施例製備出的256個場發射結構中之發射間隙的寬度統計圖。 Figure 11 is a graph showing the width of the emission gap in the 256 field emission structures prepared by the embodiment of the present invention.
第12圖係由本發明實施例製備出的256個場發射結構中之發射體的錐形奈米碳管線尖端圓錐角的統計圖。 Figure 12 is a graph showing the tip taper angle of a tapered nanocarbon line of an emitter in 256 field emission structures prepared by an embodiment of the present invention.
第13圖係採用由本發明實施例製備出的場發射結構作為16×16畫素單元的場發射增強因數統計圖。 Figure 13 is a graph showing the field emission enhancement factor of the field emission structure prepared by the embodiment of the present invention as a 16 × 16 pixel unit.
第14圖係採用由本發明實施例製備出的場發射結構作為16×16畫素單元的場發射電流統計圖。 Fig. 14 is a graph showing the field emission current of the field emission structure prepared by the embodiment of the present invention as a 16 × 16 pixel unit.
第15圖係採用由本發明實施例製備出的場發射結構作為16×16畫素單元的場發射輝度統計圖。 Fig. 15 is a graph showing the field emission luminance of the field emission structure prepared by the embodiment of the present invention as a 16 × 16 pixel unit.
第16圖係由本發明實施例製備出的場發射結構的場發射電流及輝度與時間的關係圖。 Figure 16 is a graph showing the relationship between field emission current and luminance and time of a field emission structure prepared by an embodiment of the present invention.
第17圖係採用由本發明實施例製備出的場發射結構的顯示裝置的顯示照片。 Fig. 17 is a photograph showing the display device using the field emission structure prepared by the embodiment of the present invention.
下面將結合附圖及具體實施例，對本發明提供之奈米碳管線尖端之製備方法及應用該奈米碳管線尖端的場發射結構之製備方法作進一步的詳細說明。 The preparation method of the nano carbon line tip provided by the present invention and the preparation method of the field emission structure using the nano carbon line tip will be further described in detail below with reference to the accompanying drawings and specific embodiments.
請參閱圖1，本發明提供一種奈米碳管線尖端之製備方法。該方法包括以下步驟：(S110)：提供一奈米碳管線12；以及(S120)：僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速 度小於200毫米/秒的雷射光14燒斷所述奈米碳管線，且形成一錐形奈米碳管線尖端122。 Referring to Figure 1, the present invention provides a method of preparing a tip of a carbon carbon line. The method comprises the following steps: (S110): providing a nano carbon line 12; and (S120): using only scanning power of 1 watt or more and less than 10 watts, and scanning speed Laser light 14 having a degree of less than 200 mm/sec blows the nanocarbon line and forms a tapered carbon carbon line tip 122.
請參閱圖2，所述奈米碳管線12包括複數繞該奈米碳管線軸向螺旋排列的奈米碳管。具體地，該奈米碳管線12包括複數奈米碳管片段，該複數奈米碳管片段通過凡得瓦力(Van der Waals force)首尾相連，每一奈米碳管片段包括複數相互平行並通過凡得瓦力緊密結合的奈米碳管。該奈米碳管片段具有任意的長度、厚度、均勻性及形狀。該奈米碳管線12長度不限，直徑為0.5奈米~100微米。進一步地，該奈米碳管線12的直徑可以為0.5微米~50微米。本實施例中，該奈米碳管線12的直徑大約為5微米。該奈米碳管線12可以通過以下步驟製備： Referring to FIG. 2, the nanocarbon pipeline 12 includes a plurality of carbon nanotubes axially arranged around the nanocarbon pipeline. Specifically, the nanocarbon line 12 includes a plurality of carbon nanotube segments, which are connected end to end by a Van der Waals force, and each of the carbon nanotube segments includes a plurality of parallel and A carbon nanotube that is tightly bonded by van der Waals. The carbon nanotube segments have any length, thickness, uniformity, and shape. The nano carbon line 12 is not limited in length and has a diameter of 0.5 nm to 100 μm. Further, the nano carbon line 12 may have a diameter of 0.5 micrometers to 50 micrometers. In this embodiment, the nanocarbon line 12 has a diameter of about 5 microns. The nanocarbon line 12 can be prepared by the following steps:
(S111)：提供一奈米碳管陣列，該奈米碳管陣列形成於一基底，優選地，該奈米碳管陣列為超順排奈米碳管陣列。 (S111): providing a carbon nanotube array, the carbon nanotube array being formed on a substrate, preferably, the carbon nanotube array is a super-sequential carbon nanotube array.
所述奈米碳管陣列為單壁奈米碳管陣列、雙壁奈米碳管陣列及多壁奈米碳管陣列中之一種。該奈米碳管陣列的製備方法採用化學氣相沈積法，其具體步驟包括：(a)，提供一平整基底，該基底可選用P型或N型矽基底，或選用形成有氧化層的矽基底，本實施例中採用4英寸的矽基底；(b)，於所述基底表面均勻形成一催化劑層，該催化劑層材料可選用鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合的合金之一；(c)，將上述形成有催化劑層的基底於700℃~900℃的空氣中退火約30分鐘~90分鐘；以及(d)，將處理過的基底置於反應爐中，於保護氣體環境下加熱到500℃~740℃，然後通入碳源氣體反應約5分鐘~30分鐘，生長得到奈米碳管陣列，其高度為100微米左右。該奈米碳管陣列為一純超 順排奈米碳管陣列，且包括複數彼此平行且垂直於基底生長的奈米碳管。該超順排奈米碳管陣列與所述基底面積基本相同。通過上述控制生長條件，該超順排奈米碳管陣列中基本不含有雜質，如無定型碳或殘留的催化劑金屬顆粒等。 The carbon nanotube array is one of a single-walled carbon nanotube array, a double-walled carbon nanotube array, and a multi-walled carbon nanotube array. The method for preparing the carbon nanotube array adopts a chemical vapor deposition method, and the specific steps thereof include: (a) providing a flat substrate, the substrate may be selected from a P-type or N-type germanium substrate, or a germanium formed with an oxide layer. a substrate, in this embodiment, a 4-inch germanium substrate is used; (b) a catalyst layer is uniformly formed on the surface of the substrate, and the catalyst layer material may be iron (Fe), cobalt (Co), nickel (Ni) or (c), annealing the substrate on which the catalyst layer is formed in air at 700 ° C to 900 ° C for about 30 minutes to 90 minutes; and (d) placing the treated substrate in a reaction furnace In the protective gas atmosphere, the temperature is heated to 500 ° C ~ 740 ° C, and then the carbon source gas is introduced for about 5 minutes to 30 minutes to grow to obtain a carbon nanotube array, the height of which is about 100 microns. The carbon nanotube array is a pure super The array of carbon nanotubes is aligned and includes a plurality of carbon nanotubes that are parallel to each other and grow perpendicular to the substrate. The super-sequential carbon nanotube array is substantially the same area as the substrate. The super-sequential carbon nanotube array contains substantially no impurities such as amorphous carbon or residual catalyst metal particles, etc., by controlling the growth conditions described above.
所述碳源氣可選用乙炔、乙烯、甲烷等化學性質較活潑的碳氫化合物。所述保護氣體為氮氣或惰性氣體。本實施例中，所述碳源氣為乙炔；所述保護氣體為氬氣。 The carbon source gas may be a chemically active hydrocarbon such as acetylene, ethylene or methane. The shielding gas is nitrogen or an inert gas. In this embodiment, the carbon source gas is acetylene; and the shielding gas is argon gas.
可以理解，所述奈米碳管陣列不限於上述製備方法，也可為石墨電極恒流電弧放電沈積法、雷射蒸發沈積法等等。 It can be understood that the carbon nanotube array is not limited to the above preparation method, and may be a graphite electrode constant current arc discharge deposition method, a laser evaporation deposition method or the like.
(S112)：採用一拉伸工具從奈米碳管陣列中拉取奈米碳管獲得一奈米碳管膜。 (S112): A carbon nanotube film is obtained by pulling a carbon nanotube from the carbon nanotube array using a stretching tool.
該奈米碳管膜的製備具體包括以下步驟：(a)從上述奈米碳管陣列中選定一定寬度的複數奈米碳管片斷，本實施例優選為採用具有一定寬度的膠帶接觸奈米碳管陣列以選定一定寬度的複數奈米碳管束；(b)以一定速度沿基本垂直於奈米碳管陣列生長方向拉伸複數該奈米碳管束，以形成一連續的奈米碳管膜。 The preparation of the carbon nanotube film specifically includes the following steps: (a) selecting a plurality of carbon nanotube segments of a certain width from the carbon nanotube array, and in this embodiment, preferably contacting the nanocarbon with a tape having a certain width. The tube array is selected to have a plurality of carbon nanotube bundles of a certain width; (b) the plurality of carbon nanotube bundles are drawn at a rate substantially perpendicular to the growth direction of the carbon nanotube array to form a continuous carbon nanotube membrane.
於上述拉伸過程中，該複數奈米碳管束於拉力作用下沿拉伸方向逐漸脫離基底的同時，由於凡得瓦力作用，該選定的複數奈米碳管束分別與其他奈米碳管束首尾相連地連續地被拉出，從而形成所述奈米碳管膜。該奈米碳管膜包括複數首尾相連且定向排列的奈米碳管束。該奈米碳管膜中奈米碳管的排列方向基本平行於該奈米碳管膜的拉伸方向。 During the above stretching process, the plurality of carbon nanotube bundles are gradually separated from the substrate in the stretching direction by the tensile force, and the selected plurality of carbon nanotube bundles and the other carbon nanotube bundles are respectively end-to-end due to the effect of van der Waals force. The carbon nanotube film is formed continuously and continuously drawn. The carbon nanotube membrane comprises a plurality of end-to-end aligned carbon nanotube bundles. The arrangement direction of the carbon nanotubes in the carbon nanotube film is substantially parallel to the stretching direction of the carbon nanotube film.
(S113)：通過施加機械外力處理所述奈米碳管膜形成所述奈米 碳管線12。具體地，可以通過機械力沿相反方向扭轉所述奈米碳管膜的兩端，以得到所述奈米碳管線12，使得該奈米碳管線12中之大多數奈米碳管繞該奈米碳管線12的軸向螺旋排列。 (S113): treating the nano carbon tube film by applying a mechanical external force to form the nanometer Carbon line 12. Specifically, both ends of the carbon nanotube film may be twisted in opposite directions by mechanical force to obtain the nanocarbon line 12 such that most of the carbon nanotubes in the nanocarbon line 12 surround the naphthalene The axial carbon spiral of the carbon carbon line 12 is arranged.
進一步地，可採用一揮發性有機溶劑處理所述奈米碳管線12。具體地，可將有機溶劑浸潤所述奈米碳管線12，於揮發性有機溶劑揮發時產生的表面張力的作用下，處理後的奈米碳管線12中相鄰之奈米碳管通過凡得瓦力緊密結合，使奈米碳管線12的比表面積減小，密度及強度增大。該有機溶劑為揮發性有機溶劑，如乙醇、甲醇、丙酮、二氯乙烷或氯仿，本實施例中採用乙醇。 Further, the nanocarbon line 12 can be treated with a volatile organic solvent. Specifically, the organic carbon solvent can be infiltrated into the nano carbon line 12, and the adjacent nano carbon tubes in the treated nano carbon line 12 pass through the surface tension generated by the volatile organic solvent volatilization. The tight combination of the wattage reduces the specific surface area of the nanocarbon line 12, and the density and strength increase. The organic solvent is a volatile organic solvent such as ethanol, methanol, acetone, dichloroethane or chloroform, and ethanol is used in this embodiment.
另外，所述奈米碳管線12也可以為非扭轉之奈米碳管線，該非扭轉之奈米碳管線包括複數沿該奈米碳管線軸向基本平行排列的奈米碳管。具體地，該非扭轉之奈米碳管線係由複數首尾相連的奈米碳管束組成的束狀結構。所述相鄰之奈米碳管束之間通過凡得瓦力連接。該奈米碳管束包括複數定向排列的奈米碳管。該非扭轉之奈米碳管線可以從一奈米碳管陣列中直接拉伸獲得。 In addition, the nano carbon line 12 may also be a non-twisted nano carbon line including a plurality of carbon nanotubes arranged substantially parallel along the axial direction of the nano carbon line. Specifically, the non-twisted nanocarbon pipeline is a bundle structure composed of a plurality of bundles of carbon nanotubes connected end to end. The adjacent bundles of carbon nanotubes are connected by van der Waals force. The carbon nanotube bundle includes a plurality of aligned carbon nanotubes. The non-twisted nanocarbon line can be obtained by direct stretching from a carbon nanotube array.
所述奈米碳管線12及其製備方法請參見范守善等人於2002年11月5日申請的，2008年11月21日公告的，公告號為I303239的中華民國專利；以及於2005年12月16日申請的，2009年7月21日公告的，公告號為I312337的中華民國專利。 The nano carbon line 12 and its preparation method can be found in the patent of Fan Shoushan et al., which was filed on November 5, 2002, and announced on November 21, 2008, the publication number is I303239; and in December 2005 The application for the Republic of China on the 16th, announced on July 21, 2009, the announcement number is I312337.
步驟(S120)可以包括以下步驟：(S121)將所述奈米碳管線12置於含有氧化性氣體的氣氛中；以及(S122)採用掃描功率大於等於1瓦且小於10瓦和掃描速度小於200毫米/秒的雷射光14掃描該奈米碳管線12的一預定位置124，直至該奈米碳管線12於該預定位置124斷開成兩部分。其中，所述掃描功率係指雷射光的實 際輸出功率；所述掃描速度係指雷射光斑的移動速度。 The step (S120) may include the steps of: (S121) placing the nanocarbon line 12 in an atmosphere containing an oxidizing gas; and (S122) using a scanning power of 1 watt or more and less than 10 watts and a scanning speed of less than 200 The millimeters per second of laser light 14 scans a predetermined location 124 of the nanocarbon line 12 until the nanocarbon line 12 is broken into two portions at the predetermined location 124. Wherein, the scanning power refers to the reality of the laser light Output power; the scanning speed refers to the moving speed of the laser spot.
步驟(S121)中之氧化性氣體於所述含有氧化性氣體的氣氛中之體積百分比大於25%。所述含有氧化性氣體的氣氛可以係純的氧氣，也可以係空氣。本實施例中，所述含有氧化性氣體的氣氛為空氣。 The volume percentage of the oxidizing gas in the step (S121) in the atmosphere containing the oxidizing gas is more than 25%. The atmosphere containing an oxidizing gas may be pure oxygen or air. In this embodiment, the atmosphere containing the oxidizing gas is air.
步驟(S122)為：所述雷射光14垂直照射所述奈米碳管線12，所述奈米碳管線12固定不動，通過程式控制所述雷射光14的掃描路徑，使得雷射光14的光斑沿垂直於該奈米碳管線12的軸向方向移動，從而實現用雷射光14燒斷所述奈米碳管線12。另外，還可以通過固定所述雷射光14，使得所述奈米碳管線12沿垂直於該奈米碳管線軸向的方向作直線運動，從而使得所述雷射光14直射於該奈米碳管線12上，並燒斷該奈米碳管線12。其中，所述雷射光14的掃描功率優選為3.6瓦~6瓦，所述掃描速度可以大於等於5毫米/秒，且小於等於100毫米/秒；優選地，該雷射光14的掃描速度為大於等於5毫米/秒，且小於等於10毫米/秒。所述雷射光14可以係二氧化碳雷射、半導體雷射、紫外雷射、釔鋁石榴石(YAG)雷射等任何形式的雷射光，只要能產生加熱的效果即可。 Step (S122) is: the laser light 14 vertically illuminates the nano carbon line 12, the nano carbon line 12 is fixed, and the scanning path of the laser light 14 is controlled by a program to make the spot of the laser light 14 Moving perpendicular to the axial direction of the nanocarbon line 12, the nanocarbon line 12 is blown with the laser light 14. In addition, the laser light 14 can be linearly moved in a direction perpendicular to the axial direction of the nanocarbon pipeline by fixing the laser light 14, so that the laser light 14 is directly incident on the nano carbon pipeline. 12, and the carbon carbon line 12 is blown. Wherein, the scanning power of the laser light 14 is preferably 3.6 watts to 6 watts, and the scanning speed may be greater than or equal to 5 mm/second and less than or equal to 100 mm/second; preferably, the scanning speed of the laser light 14 is greater than Equal to 5 mm/sec and less than or equal to 10 mm/sec. The laser light 14 may be any type of laser light such as a carbon dioxide laser, a semiconductor laser, an ultraviolet laser, a yttrium aluminum garnet (YAG) laser, etc., as long as the heating effect can be produced.
本實施例中，控制YAG光纖雷射器，使其發射的雷射光14以大約為3.6瓦的掃描功率垂直照射所述奈米碳管線12。固定所述雷射光14，然後使得所述奈米碳管線12沿垂直於該奈米碳管線12的軸向方向以5毫米/秒的速度作直線運動。該雷射光14掃描位於該奈米碳管線12中間的預定位置124，位於該預定位置124的奈米碳管線12能夠獲得雷射光14的能量，使得該奈米碳管線12於該預定位置124處的奈米碳管被氧化或蒸發，直至該處的奈米碳管完全變 成氣體，使得該奈米碳管線12於該預定位置124處燒斷成兩段。每段奈米碳管線12具有所述奈米碳管線尖端122，所述奈米碳管線尖端122的圓錐角大約為14度。所述兩個奈米碳管線尖端122之間的間距大於等於20微米，且小於等於30微米。其中，所述預定位置122可以根據需要確定，只要於所述奈米碳管線12懸空設置的位置即可。 In this embodiment, the YAG fiber laser is controlled such that its emitted laser light 14 is vertically illuminated by the nanocarbon line 12 at a scanning power of approximately 3.6 watts. The laser light 14 is fixed, and then the nanocarbon line 12 is linearly moved at a speed of 5 mm/sec in an axial direction perpendicular to the nanocarbon line 12. The laser light 14 scans a predetermined location 124 intermediate the nanocarbon line 12, and the nanocarbon line 12 at the predetermined location 124 is capable of obtaining energy of the laser light 14 such that the nanocarbon line 12 is at the predetermined location 124. The carbon nanotubes are oxidized or evaporated until the carbon nanotubes are completely changed The gas is formed such that the nanocarbon line 12 is blown into two stages at the predetermined position 124. Each nanocarbon line 12 has the nanocarbon line tip 122 with a cone angle of about 14 degrees. The spacing between the two nanocarbon line tips 122 is greater than or equal to 20 microns and less than or equal to 30 microns. The predetermined position 122 may be determined as needed, as long as the nanocarbon line 12 is suspended.
可以理解，所述兩個奈米碳管線尖端122之間的間距還可以小於70微米，甚至小於1微米。進一步，該兩個奈米碳管線尖端122之間的間距大於15微米，且小於等於65微米。當斷開後的奈米碳管線12應用於場發射領域時，所述兩個奈米碳管線尖端122之間的距離越小，就越比較容易發射電子。 It will be appreciated that the spacing between the two nanocarbon line tips 122 may also be less than 70 microns, or even less than 1 micron. Further, the spacing between the two nanocarbon line tips 122 is greater than 15 microns and less than or equal to 65 microns. When the disconnected nanocarbon line 12 is applied to the field emission field, the smaller the distance between the two nanocarbon line tips 122, the easier it is to emit electrons.
請參閱圖4至圖7，所述錐形的奈米碳管線尖端122中之大部分奈米碳管基本相互平行。所述錐形奈米碳管線尖端122的圓錐角小於等於17度，優選地，該奈米碳管線尖端122的圓錐角大於等於12度，且小於等於15度。由此可知，由上述方法製備之錐形奈米碳管線尖端122的直徑非常小，該錐形奈米碳管線尖端122作為電子發射體容易出現電力線的匯聚，因而可以擁有較大的電場強度，從而比較容易發射電子；因此，所述錐形的奈米碳管線尖端122具有較好的發射性能，請參閱圖8。另外，所述錐形的奈米碳管線尖端122中之大部分奈米碳管的端部係封閉的，即，該錐形的奈米碳管線尖端122中之大部分奈米碳管係閉口的，這樣有利於提高該錐形奈米碳管線尖端122的場發射穩定性。 Referring to Figures 4-7, most of the carbon nanotubes in the tapered carbon nanotube tip 122 are substantially parallel to each other. The tapered carbon nanotube tip 122 has a cone angle of less than or equal to 17 degrees. Preferably, the nanocarbon line tip 122 has a cone angle of 12 degrees or more and 15 degrees or less. It can be seen that the diameter of the tapered carbon nanotube tip 122 prepared by the above method is very small, and the tapered nanocarbon pipeline tip 122 is easy to appear as an electron emitter, and thus can have a large electric field strength. It is thus easier to emit electrons; therefore, the tapered carbon nanotube tip 122 has better emission properties, see Figure 8. Additionally, the ends of most of the carbon nanotubes in the tapered carbon nanotube tip 122 are closed, i.e., most of the carbon nanotubes in the tapered carbon nanotube tip 122 are closed. This is advantageous for improving the field emission stability of the tapered nanocarbon line tip 122.
可以理解，當所述雷射光14的掃描功率大於等於1瓦且小於10瓦，且該雷射光14的掃描速度大於等於200毫米/秒時，雷射光14能 夠掃描在所述奈米碳管線12上的幾率就比較小，從而使得預定位置124處的奈米碳管獲得的能量比較小，那麼所述奈米碳管線12就不容易燒斷。因此，所述雷射光14的掃描速度應小於200毫米/秒。另外，在所述雷射光14的掃描速度小於200毫米/秒時，當所述雷射光14的掃描功率大於10瓦時，所述奈米碳管線12能夠在預定位置124迅速地獲得較高的能量，使得該預定位置124處的奈米碳管迅速被氧化成氣體或蒸發，從而使得該奈米碳管線12於該預定位置124迅速被燒斷，所述奈米碳管線12在斷開處可能會形成如圖3所示的毛刺狀的奈米碳管線尖端，而不能形成錐形奈米碳管線尖端122。當所述雷射光14的掃描速度小於200毫米/秒，且所述雷射光14的功率小於1瓦時，所述奈米碳管線12於其預定位置124處獲得的能量就比較少，從而使得該奈米碳管線12不容易斷開；因此，當所述雷射的功率為1瓦~10瓦，且掃描速度小於200毫米/秒時，所述奈米碳管線12可以於其斷開處形成錐形的奈米碳管線尖端122。 It can be understood that when the scanning power of the laser light 14 is greater than or equal to 1 watt and less than 10 watts, and the scanning speed of the laser light 14 is greater than or equal to 200 mm/second, the laser light 14 can The probability of scanning on the nanocarbon line 12 is relatively small so that the energy obtained by the carbon nanotubes at the predetermined location 124 is relatively small, so that the nanocarbon line 12 is not easily blown. Therefore, the scanning speed of the laser light 14 should be less than 200 mm/sec. In addition, when the scanning speed of the laser light 14 is less than 200 mm/sec, when the scanning power of the laser light 14 is greater than 10 watts, the nanocarbon line 12 can be quickly obtained at a predetermined position 124. The energy causes the carbon nanotube at the predetermined location 124 to be rapidly oxidized to a gas or vaporized such that the nanocarbon line 12 is rapidly blown at the predetermined location 124, the nanocarbon line 12 being at the break A burr-like nanocarbon line tip as shown in FIG. 3 may be formed, and a tapered nanocarbon line tip 122 may not be formed. When the scanning speed of the laser light 14 is less than 200 mm/sec and the power of the laser light 14 is less than 1 watt, the nanocarbon line 12 obtains less energy at its predetermined position 124, thereby making The nanocarbon line 12 is not easily broken; therefore, when the power of the laser is 1 watt to 10 watts and the scanning speed is less than 200 mm/sec, the nanocarbon line 12 can be at its disconnection A tapered nanocarbon line tip 122 is formed.
在該步驟(S120)中不需要再增加其他步驟，如對所述奈米碳管線施加電壓，只需要通過所述雷射光照射就可以切斷所述奈米碳管線。在上述條件下，所述雷射光14可以均勻的照射所述奈米碳管線12的預定位置124，使得奈米碳管線12於預定位置124處均勻受熱，所述氧化性氣體會在該預定位置124氧化該奈米碳管線12中之奈米碳管，從而使得該奈米碳管線12在該預定位置124處慢慢地、逐漸變細，直至燒斷。 In this step (S120), it is not necessary to add other steps, such as applying a voltage to the nanocarbon line, and it is only necessary to cut the nanocarbon line by the irradiation of the laser light. Under the above conditions, the laser light 14 can uniformly illuminate the predetermined position 124 of the nanocarbon line 12 such that the nanocarbon line 12 is uniformly heated at a predetermined position 124 at which the oxidizing gas will be. 124 oxidizes the carbon nanotubes in the nanocarbon line 12 such that the nanocarbon line 12 slowly and gradually tapers at the predetermined location 124 until it is blown.
可以理解，所述奈米碳管線12也可以置於二氧化碳氣體、氮氣、氬氣等非氧化性氣體中。於該非氧化性氣體中，所述奈米碳管線 12在被雷射光14掃描的過程中，預定位置124處的奈米碳管會被氣化而蒸發掉，因此使得該奈米碳管線12於預定位置124處被燒斷。 It can be understood that the nanocarbon line 12 can also be placed in a non-oxidizing gas such as carbon dioxide gas, nitrogen gas or argon gas. In the non-oxidizing gas, the nano carbon pipeline 12 During scanning by the laser light 14, the carbon nanotubes at the predetermined location 124 are vaporized and evaporated, thus causing the nanocarbon line 12 to be blown at the predetermined location 124.
本發明第二實施例提供一種製備複數奈米碳管線尖端的方法，該方法以下步驟：提供複數奈米碳管線；以及僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光按照一預定路線燒斷所述複數奈米碳管線，形成複數錐形奈米碳管線尖端。具體地，當所述複數奈米碳管線平行排列時，該複數奈米碳管線與所述雷射光的光斑沿垂直於該複數奈米碳管線的軸向作相對運動，從而依次燒斷該複數奈米碳管線。另外，當所述複數奈米碳管線呈陣列排列時，所述雷射光的光斑或所述複數奈米碳管線按照一預定路徑作相對運動，使得該複數奈米碳管線陣列中之所有奈米碳管線被燒斷。 A second embodiment of the present invention provides a method for preparing a tip of a plurality of carbon carbon pipelines, the method comprising the steps of: providing a plurality of carbon nanotubes; and using only a scanning power of 1 watt or more and less than 10 watts, and a scanning speed of less than 200 mm The /second laser light blows the plurality of carbon carbon lines in accordance with a predetermined route to form a plurality of tapered carbon carbon line tips. Specifically, when the plurality of carbon nanotubes are arranged in parallel, the plurality of carbon nanotubes and the spot of the laser light move relative to each other in an axial direction perpendicular to the plurality of carbon nanotubes, thereby sequentially blowing the plurality Nano carbon pipeline. In addition, when the plurality of nano carbon pipelines are arranged in an array, the spot of the laser light or the plurality of carbon nanotubes are relatively moved according to a predetermined path, so that all the nanoparticles in the array of the plurality of carbon carbon pipelines The carbon line is blown.
請參閱圖8，本發明實施例還提供一種製備場發射結構20的方法，該方法包括以下步驟：(S210)：提供一奈米碳管線22、一第一電極26以及一與該第一電極26間隔設置的第二電極28；(S220)：將所述奈米碳管線22分別固定於所述第一電極26及所述第二電極28；以及(S230)：採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光24燒斷所述奈米碳管線22，且於奈米碳管線22的斷開處形成一錐形奈米碳管線尖端222。 Referring to FIG. 8 , an embodiment of the present invention further provides a method for preparing a field emission structure 20 , the method comprising the following steps: (S210): providing a nano carbon line 22 , a first electrode 26 , and a first electrode 26 spaced apart second electrodes 28; (S220): respectively fixing the nanocarbon line 22 to the first electrode 26 and the second electrode 28; and (S230): using a scanning power of 1 watt or more The laser light 24, which is less than 10 watts and has a scanning speed of less than 200 mm/second, blows the nanocarbon line 22 and forms a tapered nanocarbon line tip 222 at the break of the nanocarbon line 22.
在步驟(S210)中，所述奈米碳管線22的結構與本發明實施例提 供之奈米碳管線尖端之製備方法中之奈米碳管線12的結構相同。 In the step (S210), the structure of the nano carbon line 22 is compared with the embodiment of the present invention. The structure of the nanocarbon line 12 in the preparation method for the tip of the carbon carbon line is the same.
所述第一電極26及第二電極28之間的間距大約為300微米~500微米。所述第一電極26及第二電極28由導電材料製成，如銅、鎢、金、鉬、鉑、導電漿料等。該第一電極26及第二電極28的形狀可依實際需要設計，如錐形、細小的柱形或者圓臺形。所述第一電極26也可為形成在一絕緣基底上的導電薄膜。 The spacing between the first electrode 26 and the second electrode 28 is approximately 300 microns to 500 microns. The first electrode 26 and the second electrode 28 are made of a conductive material such as copper, tungsten, gold, molybdenum, platinum, conductive paste, or the like. The shape of the first electrode 26 and the second electrode 28 can be designed according to actual needs, such as a cone shape, a small column shape or a truncated cone shape. The first electrode 26 may also be a conductive film formed on an insulating substrate.
本實施例中，所述第一電極26為陰極。所述第二電極28為陽極，且該陽極表面設置有螢光層。該陰極及陽極均由導電漿料組成，且該導電漿料的成分包括金屬粉、低熔點玻璃粉和粘結劑。其中，該金屬粉優選為銀粉，該粘結劑優選為松油醇或乙基纖維素。該導電漿料中，金屬粉的重量比為50~90%，低熔點玻璃粉的重量比為2~10%，粘結劑的重量比為10~40%。所述螢光層的材料包括高壓螢光粉及低壓螢光粉。該螢光層可以採用沈積法或塗敷法設置在所述陽極的表面。該螢光層厚度為5微米~50微米。 In this embodiment, the first electrode 26 is a cathode. The second electrode 28 is an anode, and the anode surface is provided with a phosphor layer. The cathode and the anode are each composed of a conductive paste, and the components of the conductive paste include metal powder, low-melting glass powder, and a binder. Among them, the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50 to 90%, the weight ratio of the low melting point glass powder is 2 to 10%, and the weight ratio of the binder is 10 to 40%. The material of the phosphor layer includes high pressure phosphor powder and low pressure phosphor powder. The phosphor layer may be disposed on the surface of the anode by a deposition method or a coating method. The phosphor layer has a thickness of 5 micrometers to 50 micrometers.
步驟(S220)為將所述奈米碳管線22的一端固定於所述第一電極26，另一端固定於所述第二電極28。其中，所述奈米碳管線22可以通過一導電膠分別固定於所述第一電極26及第二電極28，也可以通過分子間力或者其他方式實現。本實施例中，所述奈米碳管線22通過導電銀膠分別固定於所述第一電極26及第二電極28。 Step (S220) is to fix one end of the nanocarbon line 22 to the first electrode 26 and the other end to the second electrode 28. The carbon nanotubes 22 may be respectively fixed to the first electrode 26 and the second electrode 28 by a conductive adhesive, or may be realized by intermolecular force or other means. In this embodiment, the nano carbon line 22 is respectively fixed to the first electrode 26 and the second electrode 28 by a conductive silver paste.
步驟(S230)與本發明實施例提供之奈米碳管線尖端之製備方法中之步驟(S120)基本相同。該步驟(S230)包括以下步驟：(S231)將分別固定於所述第二電極28及第一電極26的奈米碳管線22置於含有氧化性氣體的氣氛中；以及(S232)以掃描功率大於等於1瓦，且小於10瓦，及掃描速度小於200毫米/秒的雷射光24 掃描該奈米碳管線22的一預定位置224，該預定位置224優選靠近所述第二電極28，直至該奈米碳管線在該預定位置224斷開，形成一發射體226；該發射體226固定於所述第一電極26，且具有一錐形奈米碳管線尖端222，從而形成所述場發射結構20。其中，所述錐形的奈米碳管線尖端222包括複數端部閉口的奈米碳管。該複數奈米碳管的端部閉口有助於提高該發射體226的發射穩定性。所述奈米碳管線尖端222的圓錐角小於等於17度；優選地，該奈米碳管線尖端122的圓錐角大於等於12度，且小於等於15度。所述雷射光24之掃描功率優選為3.6瓦~6瓦。所述掃描速度可以為5毫米/秒~100毫米/秒；優選地，該雷射光24的掃描速度為5毫米/秒~10毫米/秒。 The step (S230) is substantially the same as the step (S120) in the method for preparing the nano carbon line tip provided by the embodiment of the present invention. The step (S230) includes the steps of: (S231) placing the nanocarbon line 22 respectively fixed to the second electrode 28 and the first electrode 26 in an atmosphere containing an oxidizing gas; and (S232) scanning power Laser light 24 or more and less than 10 watts, and scanning light having a scanning speed of less than 200 mm/sec Scanning a predetermined position 224 of the nanocarbon line 22, the predetermined position 224 preferably being adjacent to the second electrode 28 until the nanocarbon line is disconnected at the predetermined position 224 to form an emitter 226; the emitter 226 It is fixed to the first electrode 26 and has a tapered nanocarbon line tip 222 to form the field emission structure 20. Wherein the tapered carbon nanotube tip 222 comprises a plurality of closed carbon nanotubes. The end closure of the plurality of carbon nanotubes helps to improve the emission stability of the emitter 226. The cone angle of the nanocarbon line tip 222 is less than or equal to 17 degrees; preferably, the cone angle of the nanocarbon line tip 122 is greater than or equal to 12 degrees and less than or equal to 15 degrees. The scanning power of the laser light 24 is preferably 3.6 watts to 6 watts. The scanning speed may be from 5 mm/sec to 100 mm/sec; preferably, the scanning speed of the laser light 24 is from 5 mm/sec to 10 mm/sec.
當採用YAG光纖雷射器在表1中所述之雷射光掃描的條件下均可以燒斷所述奈米碳管線，從而形成所述發射體及場發射結構。其中，在表1的條件下得到的發射體及場發射結構可以參閱圖10。 The nanocarbon line can be blown under the conditions of the laser light scanning described in Table 1 using a YAG fiber laser to form the emitter and field emission structure. Among them, the emitter and field emission structure obtained under the conditions of Table 1 can be referred to FIG.
所述奈米碳管線22在經過所述雷射光24燒斷後，形成兩個奈米碳管線尖端，一個奈米碳管線尖端為所述發射體226的發射尖端，另一個奈米碳管線尖端與所述第二電極28電連接。所述場發射間隙小於等於65微米，優選地，兩者之間的最短的間距大於15微米，且小於等於65微米。其中，設置於所述第二電極28上的奈米碳 管線尖端與該第二電極28電連接，所以該固定於第二電極28上的奈米碳管線尖端相當於該場發射結構的第二電極的一部分。當所述第二電極28上的奈米碳管線尖端沒有伸出所述第二電極28時，所述場發射間隙係指所述發射體226的奈米碳管線尖端與該第二電極28之間的距離。當所述第二電極28上的奈米碳管線尖端露出該第二電極28時，所述場發射間隙係指所述發射體226的奈米碳管線尖端與該第二電極28的奈米碳管線尖端之間的距離。本實施例中，所述場發射間隙一般係指設置於第二電極28的奈米碳管線尖端與所述發射體226的奈米碳管線尖端之間的距離。由於所述第一電極26為陰極，所述第二電極28為陽極，當分別對所述陰極與陽極施加一電壓時，由於所述場發射間隙比較小，所述陰極與陽極上的奈米碳管線尖端之間將會形成較大的電勢差，從而電子比較容易通過所述發射體226的奈米碳管線尖端222發射出來並轟擊到陽極表面的螢光層上，使得該螢光層發光。所以，所述陽極上即使施加比較低的電壓，也可以保證所述場發射結構20正常工作。 The nanocarbon line 22 forms two nano carbon line tips after being blown by the laser light 24, one nano carbon line tip is the emission tip of the emitter 226, and the other nano carbon line tip is The second electrode 28 is electrically connected. The field emission gap is less than or equal to 65 microns, and preferably, the shortest spacing between the two is greater than 15 microns and less than or equal to 65 microns. Wherein the carbon carbon disposed on the second electrode 28 The tip of the line is electrically coupled to the second electrode 28 such that the tip of the nanocarbon line secured to the second electrode 28 corresponds to a portion of the second electrode of the field emission structure. When the tip of the carbon nanotube line on the second electrode 28 does not protrude from the second electrode 28, the field emission gap refers to the tip of the carbon carbon line of the emitter 226 and the second electrode 28 The distance between them. When the tip of the carbon nanotube line on the second electrode 28 exposes the second electrode 28, the field emission gap refers to the carbon nanotube tip of the emitter 226 and the carbon of the second electrode 28. The distance between the tips of the pipeline. In the present embodiment, the field emission gap generally refers to the distance between the tip of the nanocarbon line disposed at the second electrode 28 and the tip of the carbon nanotube of the emitter 226. Since the first electrode 26 is a cathode and the second electrode 28 is an anode, when a voltage is applied to the cathode and the anode respectively, since the field emission gap is relatively small, the cathode and the anode on the anode are A large potential difference will be formed between the carbon line tips so that electrons are relatively easily emitted through the nanocarbon line tip 222 of the emitter 226 and bombarded onto the phosphor layer of the anode surface such that the phosphor layer emits light. Therefore, even if a relatively low voltage is applied to the anode, the field emission structure 20 can be guaranteed to operate normally.
可以理解，本發明實施例還可以提供製備複數場發射結構20的方法，該方法包括：提供複數奈米碳管線22、複數第一電極26以及複數第二電極28，且該複數第一電極26與該複數第二電極28一一對應且間隔設置；將所述複數奈米碳管線22固定於所述複數第一電極26及所述複數第二電極28；以及僅採用掃描功率大於等於1瓦且小於10瓦，及掃描速度小於200毫米/秒的雷射光24燒斷所述複數奈米碳管線22，且在每個奈米碳管線22的斷開處形成一錐形奈米碳管線尖端222，從而形成複數場發射結構20。其中，當該複數場發射結構20用於顯示器件中時，所述複數第一電極26與其 對應的第二電極28及奈米碳管線22呈陣列排列，所述雷射光24按照預定的路徑掃描所述複數奈米碳管線22直至每個奈米碳管線22斷開；從而形成場發射結構陣列。因此，上述方法可以實現批量生產場發射結構20。 It can be understood that the embodiment of the present invention can also provide a method for preparing a complex field emission structure 20, the method comprising: providing a plurality of nano carbon pipelines 22, a plurality of first electrodes 26, and a plurality of second electrodes 28, and the plurality of first electrodes 26 One-to-one correspondence with the plurality of second electrodes 28 and spaced apart; fixing the plurality of nanocarbon lines 22 to the plurality of first electrodes 26 and the plurality of second electrodes 28; and using only scanning power of 1 watt or more And less than 10 watts, and laser light 24 having a scanning speed of less than 200 mm/sec blows the plurality of carbon nanotubes 22 and forms a tapered carbon carbon line tip at the break of each nanocarbon line 22. 222, thereby forming a complex field emission structure 20. Wherein, when the complex field emission structure 20 is used in a display device, the plurality of first electrodes 26 and Corresponding second electrode 28 and nano carbon line 22 are arranged in an array, and the laser light 24 scans the plurality of carbon carbon lines 22 according to a predetermined path until each nano carbon line 22 is disconnected; thereby forming a field emission structure Array. Therefore, the above method can realize the mass production field emission structure 20.
本實施例中，提供256條奈米碳管線22，256個陰極和256個陽極。其中，一個陰極、一個陽極及一條奈米碳管線22組成一個場發射結構前驅體。該場發射結構前驅體中之陰極與陽極間隔設置，且奈米碳管線22固定於該陰極與陽極。即，本實施例提供256個場發射結構前驅體。該256個場發射結構前驅體按照16×16的陣列方式排列。然後，僅採用掃描功率為3.6瓦，掃描速度為5毫米/秒的雷射光按照預設的路線掃描所述256條奈米碳管線，使得該奈米碳管線斷開，從而形成256個、按照16×16的陣列方式排列的場發射結構。 In this embodiment, 256 nanocarbon lines 22, 256 cathodes and 256 anodes are provided. Among them, a cathode, an anode and a nanocarbon line 22 constitute a field emission structure precursor. The cathode of the field emission structure precursor is spaced apart from the anode, and the nanocarbon line 22 is fixed to the cathode and the anode. That is, the present embodiment provides 256 field emission structure precursors. The 256 field emission structure precursors are arranged in a 16 x 16 array. Then, only the laser light having a scanning power of 3.6 watts and a scanning speed of 5 mm/sec is scanned according to a preset route to scan the 256 nanocarbon pipelines, so that the nanocarbon pipeline is disconnected, thereby forming 256, according to A field emission structure of 16 x 16 array arrangement.
請參閱圖11及圖12，該256個場發射結構20中之發射體的奈米碳管線尖端222的圓錐角的分佈係相對集中的，該奈米碳管線尖端222與陽極上的奈米碳管線尖端之間的間距的分佈也係相對集中的；因此，所述發射體的奈米碳管線尖端222能夠均勻的發射電子。另外，陰極與陽極上的奈米碳管線尖端之間的間距小於等於65微米，施加電壓之後，奈米碳管線尖端222可以在較低的電壓下發射電子，使得所述陰極上的奈米碳管線尖端222比較容易發生電流；所以，即使陽極上施加較小的電壓，所述發射體的奈米碳管線尖端222也能夠發射電子。 Referring to FIGS. 11 and 12, the distribution of the cone angles of the nanocarbon line tips 222 of the emitters in the 256 field emission structures 20 is relatively concentrated. The carbon nanotube tip 222 and the carbon on the anode are relatively concentrated. The distribution of the spacing between the tips of the pipelines is also relatively concentrated; therefore, the carbon nanotube tip 222 of the emitter is capable of uniformly emitting electrons. In addition, the spacing between the cathode and the tip of the nanocarbon line on the anode is less than or equal to 65 microns. After the voltage is applied, the carbon nanotube tip 222 can emit electrons at a lower voltage, such that the carbon on the cathode The line tip 222 is relatively prone to current flow; therefore, the nanocarbon line tip 222 of the emitter is capable of emitting electrons even if a small voltage is applied across the anode.
請參閱圖13至圖15，當所述256個場發射結構20作為16×16畫素單元應用於顯示裝置時，所述奈米碳管線尖端222的場發射增強因 數(γ)分佈比較集中；場發射電流和輝度雖然呈指數分佈，惟大多數還係落在一個比較小的範圍。請參閱圖16，所述場發射結構20的場發射電流和輝度都係比較穩定的，雖然場發射電流在電子發射初始階段表現出一個明顯的衰減，惟最終能夠趨於穩定。另外，從圖17可以看出：當採用本發明實施例提供之場發射結構20作為顯示裝置的畫素單元時，通過控制電路可以使該顯示裝置顯示動態圖像。由此可見，所述奈米碳管線尖端222可以在場發射器件中正常的工作。 Referring to FIG. 13 to FIG. 15, when the 256 field emission structures 20 are applied as a 16×16 pixel unit to a display device, the field emission enhancement factor of the nano carbon line tip 222 is enhanced. The number (γ) distribution is relatively concentrated; although the field emission current and luminance are exponentially distributed, most of them are still in a relatively small range. Referring to Figure 16, the field emission current and luminance of the field emission structure 20 are relatively stable, although the field emission current exhibits a significant attenuation in the initial stage of electron emission, but eventually can be stabilized. In addition, it can be seen from FIG. 17 that when the field emission structure 20 provided by the embodiment of the present invention is used as the pixel unit of the display device, the display device can display the dynamic image through the control circuit. As can be seen, the nanocarbon line tip 222 can function properly in a field emission device.
本發明實施例提供之奈米碳管線尖端之製備方法能夠比較容易地製備出錐形的奈米碳管線尖端，該錐形的奈米碳管線尖端可以作為電子發射體的尖端，使得該電子發射體的尖端表面會出現電力線的匯聚，從而擁有較大的電場強度，進而使得所述發射體中之電子比較容易逸出。本發明提供之製備方法可以批量生產所述奈米碳管線尖端。由該方法製備之奈米碳管線尖端用作電子發射體的尖端時，能夠均勻的發射電子，發射性能比較穩定，而且可以正常工作。本發明實施例提供之場發射結構之製備方法使得場發射結構的製造工序更加簡單，而且電子發射體的尖端和其他電極之間的距離更容易控制。另外，由本發明實施例提供之製備場發射結構的方法可以批量生產場發射結構；該場發射結構的發射性能比較穩定，而且可以正常工作. The preparation method of the nano carbon line tip provided by the embodiment of the invention can relatively easily prepare a tapered nano carbon line tip, which can serve as the tip of the electron emitter, so that the electron emission The tip surface of the body will have a convergence of power lines, which will have a large electric field strength, which in turn makes it easier for electrons in the emitter to escape. The preparation method provided by the present invention can mass produce the nano carbon line tip. When the tip of the nanocarbon pipeline prepared by the method is used as the tip of the electron emitter, it can uniformly emit electrons, the emission performance is relatively stable, and it can work normally. The method for preparing the field emission structure provided by the embodiment of the present invention makes the manufacturing process of the field emission structure simpler, and the distance between the tip of the electron emitter and other electrodes is more easily controlled. In addition, the method for preparing a field emission structure provided by the embodiment of the present invention can mass produce a field emission structure; the emission performance of the field emission structure is relatively stable, and can work normally.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
12‧‧‧奈米碳管線 12‧‧‧Nano carbon pipeline
122‧‧‧奈米碳管線尖端 122‧‧‧Nano carbon line tip
14‧‧‧雷射光 14‧‧‧Laser light
124‧‧‧預定位置 124‧‧‧Predetermined location
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| US638345A (en) * | 1898-04-21 | 1899-12-05 | Koelner Wassermesses Werk Ges Mit Beschraenkter Haftung | Gas lighting or extinguishing apparatus. |
| EP1111647A2 (en) * | 1999-12-21 | 2001-06-27 | Sony Corporation | Electron emission device, cold cathode field emission device and method for the production thereof, and cold cathode field emission display and method for the production thereof |
| CN101425435A (en) * | 2007-11-02 | 2009-05-06 | 清华大学 | Field emission type electron source and its manufacturing method |
| TW200943378A (en) * | 2008-04-03 | 2009-10-16 | Hon Hai Prec Ind Co Ltd | Method for making field emission electron source |
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| Publication number | Publication date |
|---|---|
| TW201230139A (en) | 2012-07-16 |
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