TWI324283B - - Google Patents

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Publication number
TWI324283B
TWI324283B TW095137692A TW95137692A TWI324283B TW I324283 B TWI324283 B TW I324283B TW 095137692 A TW095137692 A TW 095137692A TW 95137692 A TW95137692 A TW 95137692A TW I324283 B TWI324283 B TW I324283B
Authority
TW
Taiwan
Prior art keywords
laser light
substrate
irradiation
moving
laser
Prior art date
Application number
TW095137692A
Other languages
English (en)
Chinese (zh)
Other versions
TW200719101A (en
Original Assignee
Orc Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orc Mfg Co Ltd filed Critical Orc Mfg Co Ltd
Publication of TW200719101A publication Critical patent/TW200719101A/zh
Application granted granted Critical
Publication of TWI324283B publication Critical patent/TWI324283B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095137692A 2005-11-04 2006-10-13 Laser beam exposure apparatus and method therefor TW200719101A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005321256 2005-11-04
JP2006246266A JP4533874B2 (ja) 2005-11-04 2006-09-12 レーザビーム露光装置

Publications (2)

Publication Number Publication Date
TW200719101A TW200719101A (en) 2007-05-16
TWI324283B true TWI324283B (ja) 2010-05-01

Family

ID=38209773

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095137692A TW200719101A (en) 2005-11-04 2006-10-13 Laser beam exposure apparatus and method therefor

Country Status (3)

Country Link
JP (1) JP4533874B2 (ja)
KR (1) KR100931712B1 (ja)
TW (1) TW200719101A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101048785B1 (ko) * 2008-09-25 2011-07-15 에이티엘(주) 디지털 노광 장치
KR102225208B1 (ko) * 2019-05-13 2021-03-09 디아이티 주식회사 반도체 표면처리 시스템 및 방법
JP2024042874A (ja) * 2022-09-16 2024-03-29 株式会社Ｓｃｒｅｅｎホールディングス 露光方法および露光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3915851B2 (ja) 1996-12-27 2007-05-16 オムロン株式会社 レーザビームを用いてマーキングするための方法、並びに、表示パネルの製造工程においてガラス基板に識別情報をマーキングするための方法
JP2000294501A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP2000294500A (ja) * 1999-04-09 2000-10-20 Nikon Corp 周辺露光装置及び方法
JP3091460B1 (ja) * 1999-12-10 2000-09-25 東レエンジニアリング株式会社 露光装置
JP4342663B2 (ja) * 1999-12-20 2009-10-14 株式会社オーク製作所 周辺露光装置
JP2001201862A (ja) * 2000-01-19 2001-07-27 Nikon Corp 周辺露光装置
JP3321733B2 (ja) * 2000-09-20 2002-09-09 東レエンジニアリング株式会社 露光装置
JP2002365811A (ja) * 2001-06-08 2002-12-18 Mitsubishi Corp フォトレジスト塗布基板の露光方法及び装置
JP3547418B2 (ja) * 2001-10-25 2004-07-28 三菱商事株式会社 レーザビームによる液晶パネルのマーキング方法及び装置
CN1288502C (zh) * 2001-10-25 2006-12-06 东丽工程株式会社 利用激光束的识别码的打印装置
KR20060053045A (ko) * 2004-11-13 2006-05-19 삼성전자주식회사 갈바노미터 스캐너를 이용한 레이저 마킹 장치 및 방법
JP4664102B2 (ja) * 2005-03-18 2011-04-06 東レエンジニアリング株式会社 露光装置及び露光方法

Also Published As

Publication number Publication date
JP4533874B2 (ja) 2010-09-01
KR20070048613A (ko) 2007-05-09
KR100931712B1 (ko) 2009-12-14
JP2007148359A (ja) 2007-06-14
TW200719101A (en) 2007-05-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees