TWI310409B - Sputtering target - Google Patents

Sputtering target Download PDF

Info

Publication number
TWI310409B
TWI310409B TW093119432A TW93119432A TWI310409B TW I310409 B TWI310409 B TW I310409B TW 093119432 A TW093119432 A TW 093119432A TW 93119432 A TW93119432 A TW 93119432A TW I310409 B TWI310409 B TW I310409B
Authority
TW
Taiwan
Prior art keywords
sputtering
fine
arc
target
grinding
Prior art date
Application number
TW093119432A
Other languages
English (en)
Chinese (zh)
Other versions
TW200426238A (en
Inventor
Sadao Senda
Naoki Ono
Hiromitsu Hayashi
Izumi Hayakawa
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001283658A external-priority patent/JP2003089869A/ja
Priority claimed from JP2001376247A external-priority patent/JP2003183820A/ja
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW200426238A publication Critical patent/TW200426238A/zh
Application granted granted Critical
Publication of TWI310409B publication Critical patent/TWI310409B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW093119432A 2001-09-18 2002-09-17 Sputtering target TWI310409B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001283658A JP2003089869A (ja) 2001-09-18 2001-09-18 スパッタリングターゲットおよびその製造方法
JP2001376247A JP2003183820A (ja) 2001-12-10 2001-12-10 スパッタリングターゲット

Publications (2)

Publication Number Publication Date
TW200426238A TW200426238A (en) 2004-12-01
TWI310409B true TWI310409B (en) 2009-06-01

Family

ID=26622432

Family Applications (2)

Application Number Title Priority Date Filing Date
TW091121199A TWI293991B (en) 2001-09-18 2002-09-17 Sputtering target and method of manufacturing same
TW093119432A TWI310409B (en) 2001-09-18 2002-09-17 Sputtering target

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW091121199A TWI293991B (en) 2001-09-18 2002-09-17 Sputtering target and method of manufacturing same

Country Status (4)

Country Link
KR (1) KR100541329B1 (ko)
CN (1) CN100457961C (ko)
TW (2) TWI293991B (ko)
WO (1) WO2003025247A1 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023487B2 (en) 2011-09-21 2015-05-05 Jx Nippon Mining & Metals Corporation Laminated structure and method for producing the same
US9139900B2 (en) 2011-03-01 2015-09-22 JX Nippon Mining Metals Corporation Indium target and manufacturing method thereof
US9490108B2 (en) 2010-09-01 2016-11-08 Jx Nippon Mining & Metals Corporation Indium target and method for manufacturing same
TWI565678B (zh) * 2011-03-24 2017-01-11 Idemitsu Kosan Co Sputtering target and its manufacturing method
US9758860B2 (en) 2012-01-05 2017-09-12 Jx Nippon Mining & Metals Corporation Indium sputtering target and method for manufacturing same
US9761421B2 (en) 2012-08-22 2017-09-12 Jx Nippon Mining & Metals Corporation Indium cylindrical sputtering target and manufacturing method thereof
US9922807B2 (en) 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112006000209T5 (de) * 2005-01-19 2007-12-06 ULVAC, Inc., Chigasaki Bedampfungsvorrichtung und Filmausbildungsverfahren
JP4948633B2 (ja) * 2010-08-31 2012-06-06 Ｊｘ日鉱日石金属株式会社 インジウムターゲット及びその製造方法
JPWO2016027540A1 (ja) 2014-08-22 2017-06-01 三井金属鉱業株式会社 ターゲット材、ターゲット材の製造方法および平板状ターゲット
JP7394085B2 (ja) * 2021-04-05 2023-12-07 Ｊｘ金属株式会社 スパッタリングターゲット及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60215761A (ja) * 1984-04-11 1985-10-29 Hitachi Ltd スパツタリング用タ−ゲツトの形成方法
JPH06248444A (ja) * 1993-02-26 1994-09-06 Mitsubishi Materials Corp スパッタリング用ターゲット
JPH09328376A (ja) * 1996-06-06 1997-12-22 Sumitomo Metal Ind Ltd 半導体製造装置用セラミックス部材の製造方法
JP4076000B2 (ja) * 1997-07-04 2008-04-16 宮城県 成膜装置用防着板及びその製造方法
JPH11219939A (ja) * 1998-02-04 1999-08-10 Tokyo Electron Ltd 基板載置台表面保護板、処理室内部のクリーニング方法及び基板載置台のクリーニング方法
JPH11302834A (ja) * 1998-04-22 1999-11-02 Nippon Electric Glass Co Ltd スパッタリング方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9490108B2 (en) 2010-09-01 2016-11-08 Jx Nippon Mining & Metals Corporation Indium target and method for manufacturing same
US9139900B2 (en) 2011-03-01 2015-09-22 JX Nippon Mining Metals Corporation Indium target and manufacturing method thereof
TWI565678B (zh) * 2011-03-24 2017-01-11 Idemitsu Kosan Co Sputtering target and its manufacturing method
US9023487B2 (en) 2011-09-21 2015-05-05 Jx Nippon Mining & Metals Corporation Laminated structure and method for producing the same
US9758860B2 (en) 2012-01-05 2017-09-12 Jx Nippon Mining & Metals Corporation Indium sputtering target and method for manufacturing same
US9761421B2 (en) 2012-08-22 2017-09-12 Jx Nippon Mining & Metals Corporation Indium cylindrical sputtering target and manufacturing method thereof
US9922807B2 (en) 2013-07-08 2018-03-20 Jx Nippon Mining & Metals Corporation Sputtering target and method for production thereof

Also Published As

Publication number Publication date
WO2003025247A1 (fr) 2003-03-27
TW200426238A (en) 2004-12-01
TWI293991B (en) 2008-03-01
KR100541329B1 (ko) 2006-01-10
CN1492941A (zh) 2004-04-28
KR20030057555A (ko) 2003-07-04
CN100457961C (zh) 2009-02-04

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