TWI310409B - Sputtering target - Google Patents

Description

1310409 九、發明說明： 【發明所屬之技術領域】 本發明係關於濺鍍及薄膜形点拄 哥联办烕時所採用的濺鍍靶 【先前技術】 σ有如錢錢法。所謂濺鍍法 習知薄膜形成法 '一人ν厂丨明嗎殿法 -般係指㈣壓下，使呈電漿狀態的惰氣撞㈣餘⑷ 者=基板上而形成薄膜的方法，因為可較容易大面積化立 獲付雨性能的臈，因此被利用於工業上。 此外’近年在濺鍍方式方面， 已知有如·在反應性氣 體中=雜的反應㈣料、在㈣㈣置磁石俾達薄 膜形成高速化的磁控錢鍍法等等。/ 在制此類舰法所形成的薄財，_係以氧化鋼 (ι_)或氧化錫咖⑹中至少其中—種為主成分的氧 因此被當作透明導電膜並廣泛的使用於液晶顯示裝置或"玻 璃防霧用發熱膜、紅外線反射膜等。 供形成此類ΙΤ0膜用的靶，如同其他氧化物靶，在將 原料粉末成形後’洲進行燒結的粉末冶I法(燒結法）製 成靶材之後，對此靶材採用#200前後的砂紙進行平面 磨並利用其他加工機器施行外形加工而製得。 —但是，若採用依此方式製得的濺鍍靶，來形成高性 薄膜的話，將產生如下述問題點。 ^ 換句話說，在施行濺鍍之際，特別在濺鍍開始初期將 314023D01 5 1310409 產生所謂「產生電孤（arcing)」的異常放電（以下簡稱為初 期電弧）’而將損害到.成膜安定性，同時亦將產生粉粒。而 該粉粒將附著並沉積於濺鍍靶上，而形成所謂「結塊 (nodule)」的黑色附著物。此附著物乃造成初期電弧的原 因之一’此外亦將誘發出新粉粒的產生。另外，若粉粒附 著於薄膜上的話’薄膜性能便將惡化。 所以 虽汊用新的濺鍍靶之際，為迴避此類問題點， ，便將新的濺鍍靶設置於濺鍍裝置上，亦需要從剛剛開始 濺鍍之後起，至不會產生電弧而可進行產品製造之間的日^ 間進行空運轉’導致妨礙生產性的提昇。 習知此類產生或結塊的產生，.乃以對乾表面施行 研磨，越平滑越能降低此現象的發生，而對表面施行平面 的表面研磨，，截至目前為止乃屬主流。譬如藉由將 靶表面粗經度設定在既定範圍内，而企圖防止產生電弧、 f結塊現象的1㈣，有如日本專利第275G483號公 報、第3152108號公報等中所揭示。 制但是’在為達成此類既定表面粗糖度方面上，便有在 戶作：：靶之後’利用機械研磨而施行粗研磨 二::後式的施行精研磨(研磨)俾達乾表面： 致製造時間及成本增加的問題發生。此外，即 更八有此種既定表面粗糙度的ίτ〇靶，亦 止初期電弧，且將產生從將斩戚 /有效的防 如生從將新的濺鍍靶設置於濺铲#罟 起，必須耗費比較長時間進行空運轉的問題。鑛裝置 再者，此類問題在利用以ίτ〇以外之其他氧化物、氮1310409 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a sputtering target used for sputtering and film-shaped dots. [Prior Art] σ is like a money method. The so-called sputtering method is known as the method of forming a film. The method of forming a film on the substrate is as follows: (4) Pressing to make the inert gas in a plasma state collide (4) (4) = the film is formed on the substrate because It is easier to use a large area to obtain the enthusiasm for rain performance, so it is used in industry. Further, in recent years, in the sputtering method, there are known a reaction (four) in which a reactive gas is mixed, a magnetron plating method in which (4) (four) a magnet is placed, and a film is formed at a high speed. / In the thin money formed by such a ship method, oxygen, which is mainly composed of at least one of oxidized steel (ι_) or tin oxide coffee (6), is used as a transparent conductive film and is widely used in liquid crystal display. Device or "glass anti-fog heating film, infrared reflection film, etc. A target for forming such a ruthenium film, like other oxide targets, after the raw material powder is formed, the powder is sintered by the method of sintering, and the target is made of #200 before and after the target. Sandpaper is surface-grinded and processed by other processing machines for profile processing. - However, if a sputtering target prepared in this manner is used to form a high-performance film, the following problems will occur. ^ In other words, when sputtering is performed, especially in the initial stage of sputtering, 314023D01 5 1310409 generates an abnormal discharge (hereinafter referred to as initial arc) which is called "arcing" and will damage the film. Stability, and will also produce powder. The particles will adhere to and deposit on the sputtering target to form a so-called "nodule" of black deposits. This attachment is one of the causes of the initial arc' and will also induce the production of new particles. In addition, if the particles are attached to the film, the film properties will deteriorate. Therefore, in spite of the use of new sputtering targets, in order to avoid such problems, a new sputtering target is placed on the sputtering device, and it is necessary to start from the beginning of the sputtering to the point where no arc is generated. It is possible to carry out the empty operation between the manufactures of the products, which hinders the improvement of productivity. It is known that such generation or agglomeration is produced by grinding the dry surface, and the smoother the lower the occurrence of this phenomenon, the flat surface grinding of the surface, which is the mainstream until now. For example, it is disclosed in Japanese Patent No. 275G483, No. 3152108, etc., by setting the rough surface of the target surface within a predetermined range and attempting to prevent arcing and f-capping. But in the case of achieving such a rough surface sugar content, there is a household work:: after the target 'Using mechanical grinding to perform rough grinding 2:: After the type of fine grinding (grinding) 俾 dry surface: The problem of increased manufacturing time and cost occurs. In addition, even the ίτ〇 target with such a given surface roughness will also stop the initial arc, and will result from the 斩戚/effective protection from setting the new sputtering target to the splash shovel. It must take a long time to run empty. Mine installations, such problems are in the use of other oxides, nitrogen other than ίτ〇

314023D0I 6 1310409 化物、碳化物、氣物等為主成分的粉末冶金法（燒块 而所製得的陶£系乾或金屬系乾亦將同樣的存在。 在π t月者有#於上述狀況，遂經深入鑽研，結果發現 =機械研好_製造㈣餘，會存在有些部位因研 ^驟4在1巴表面出現初期粉粒，或由於賊時的献衝擊 =從表層脫離產生錄，這㈣是產生電弧與結塊的主要 ”因，只要去除它們就可防止初期電弧的產生。 此外，經本發明者的研究結果，發現上述部位是否會 因賤鑛時的熱衝擊而從表層脫離產生粉粒，與其說是因乾 =表面粗链度所引起，倒不如說要更加料於機械研磨使 表面往内部產生細微龜裂而造成。而且發現所有細微龜 f的存在並不疋造成產生電弧與結塊的原因，特別是關於 初期電弧’存在既定值以上的深度與長度的細微龜裂“ 主要的產生原因，藉由實質上消除此種細微龜裂，便可有 效的防止初期電弧的發生，至此遂完成本發明。 故j發明之目的在於提供一種可防止初#月電孤的產 生，並提昇雜的初期穩定性，明顯提昇薄膜形成時的生 產性之濺鍍靶及其製造方法。 【發明内容】 本發明之濺鍍靶係經機械研磨步驟而製得的濺鍍靶； 當觀察靶之濺鍍面的截面時，實質上已消除深度l5#m以 上且長度40/zm以上（最好深度1〇//m以上且長度3〇#m 以上）的細微龜裂。此外，上述濺鍍靶係深度5#瓜以上且 低於ΙΟ/zm，而長度ι〇/ζηι以上且低於3〇#m的細微龜裂 7 314023D01 1310409 數量’最好在截面寬 真去，士 見度方向上，平均2. 5mm在5個以下。 理、雷射處理發係最好對其麟面施行賤錢處 紅式蝕刻處理中之任一種而所獲得者。 所構成的，’ ^明^錢革巴最好由經粉末冶金法製得輕材 、 以氧化銦或氧化錫中之至少其中一種為主 成分。 上述執之賤鍍面表面粗糙度Ra 本發明之機鍍革巴中 可為1 · 0私m以上。 【實施方式】314023D0I 6 1310409 Powder metallurgy method based on compounds, carbides, gas and other components (the dried or metal-based stems produced by burning the blocks will also exist in the same way. In π t月有有# in the above situation After digging deeper into the study, it turns out that = mechanical research _ manufacturing (four), there will be some parts due to the research 4 step 4 on the surface of the 1 bar initial grain, or due to the thief's contribution to the impact = from the surface of the record, this (4) It is the main cause of arcing and agglomeration, and it is possible to prevent the generation of the initial arc by removing them. Furthermore, according to the findings of the present inventors, it is found whether the above-mentioned part is detached from the surface layer due to thermal shock during the antimony mining. Granules, not so much due to dry = surface thick chain, it is better to say that mechanical grinding causes the surface to produce fine cracks inside. And it is found that the existence of all fine turtles does not cause arcing and The reason for the agglomeration, especially the fine crack of the depth and length of the initial arc 'there is a predetermined value or more.' The main cause is that it can be effectively eliminated by substantially eliminating such fine cracks. In order to prevent the occurrence of an initial arc, the present invention has been completed. Therefore, the object of the invention is to provide a sputtering target which can prevent the generation of the first month and improve the initial stability of the impurities and significantly improve the productivity in film formation. And a method of manufacturing the same. The sputtering target of the present invention is a sputtering target prepared by a mechanical grinding step; when the cross section of the sputtering surface of the target is observed, the depth of l5#m or more is substantially eliminated. Fine cracking of 40/zm or more (preferably, depth of 1〇//m or more and length of 3〇#m or more). In addition, the above-mentioned sputtering target system has a depth of 5# or more and less than ΙΟ/zm, and the length is ι〇. / ζηι above and below 3〇#m of fine cracks 7 314023D01 1310409 Quantity 'best in the section width true to go, the direction of the visibility, the average 2. 5mm in 5 or less. Rational, laser processing hairline most It is good to obtain any one of the red etching treatments on the side of the lining. It is best to make a light material, indium oxide or tin oxide by powder metallurgy. At least one of them is a main component. Roughness Ra In the machine plating of the present invention, it may be 1 · 0 private m or more.

說明。 態樣與第二態樣均屬於經 以下，針對本發明進行具體 相關本發明之濺鍍靶，第一 由機械研磨步驟進行製造的。Description. Both the aspect and the second aspect belong to the following, and the sputtering target specifically related to the present invention is manufactured by the mechanical grinding step.

換句話說纟發明之錢鑛執僅要屬於經機械研磨步驟 者便可’本發明中所採用的純並無特別的限制，譬如可 ，以氧化物、氮化物、碳化物、魏物等為主成分的陶究 糸、或由金屬所構成的靶。此類靶材具體而言，可例舉如 以1n2〇3或Sn〇2中至少其中一種為主成分的UT0)、以In2〇3 或Zn〇巾至少其中一種為主成分的（ΙΖΟ)、ΖπΟ-ΑΙ2〇3、In other words, the invention of the money mine is only required to belong to the mechanical grinding step. The purity used in the present invention is not particularly limited, such as oxides, nitrides, carbides, and Weis. The main component of the pottery, or the target made of metal. Specifically, such a target may be, for example, UT0 having at least one of 1n2〇3 or Sn〇2 as a main component, and at least one of In2〇3 or Zn wipes as a main component (ΙΖΟ), ΖπΟ-ΑΙ2〇3,

Ih2〇3、Sn〇2、ZnO、Al2〇3、Si〇2、Ta2〇5、MgO、NiO、Si3N4、 MN、SiC、M〇、W、Cr、Ti、Zr、Hf、Nb、Ta、A1 等。該 荨之中I TO賤鍍乾，因為被要求有效率的執行賤鑛，且 需高度的初期安定性’因此本發明之第—態樣與第二態樣 可特別有效適用於此。 再者，製造上述靶材之方法並無特別的限制，譬如將 314023D01 8 1310409 - 依既定調配比率進行、、θ人 所獲得均勾混合物的原料粉末，或依共沉澱法等而 習知週知的各種乾式^末，就陶究絲而言，可採用 再施行機械研磨的燒進行成形後’經燒結後， 金屬系㈣話粉末冶金法）而進行製作；若就 再經機械研磨的真空炫真解;，，經鑄造綱 CIP(冷㈣燒結）法進^解/、或Ηίρ(熱均麗燒結）法、或 末冶金法。 如丁成形後’再經燒結、塑性加工的粉Ih2〇3, Sn〇2, ZnO, Al2〇3, Si〇2, Ta2〇5, MgO, NiO, Si3N4, MN, SiC, M〇, W, Cr, Ti, Zr, Hf, Nb, Ta, A1 Wait. The I TO 贱 is dried in the crucible because it is required to perform the antimony ore efficiently, and a high initial stability is required. Therefore, the first aspect and the second aspect of the present invention can be particularly effectively applied thereto. Further, the method for producing the target is not particularly limited, and for example, 314023D01 8 1310409 - a raw material powder which is obtained according to a predetermined ratio, a mixture obtained by θ, or a coprecipitation method is known. The various types of dry type, in the case of ceramics, can be produced by mechanical sintering after sintering, after sintering, metal (four) powder metallurgy method; if it is mechanically ground vacuum True solution;,, through the casting CIP (cold (four) sintering) method into the solution /, or Ηίρ (heat uniform sintering) method, or the final metallurgy method. If the butyl is formed, then the sintered, plastically processed powder

(執^^法可舉例如CP(冷幻法，（熱壓）法、HIP U法等。cp法乃將經混合的原料粉末填充入， 形模中，而製成成形體，並在大氣環 々ff充入成 扞焯忐广換社、Ιτη 你入乳银境下或氧氣環境下進 #的成形模中’ 一邊進行加熱加壓 电，内 =ίΡ法則將經物原料粉末或預備成形：，在橡： =或即便u中亦仍將形成被覆體的： 封入脫氣之後，插人容器中，通過非活性心^中進仃 一邊施行等向性的加a —邊施行加熱燒結^錢體媒體’嚷 濕式法有如日本發明專利特開平u 咕 所記載的㈣式成形法。此職式成料報中 衆施行減屢排除水分而獲得成形體， :仗）竞原料 ::構成的過攄式成形模，在此式成形模：水:性： 經混合過的原料粉末、離子交換水、有夭/入由 聚料，減壓排除漿料中的水分而製作成:劑所構成的 經乾燥脫脂後，再進行燒結。^ ’將此成形體 3I4023D01 9 .1310409 另外’在上述各方法中，燒結溫度最好為配合所使用 原料而所設定的適當温度。 如上述’使原料在模具内成形並經燒結，而製作出靶 ^後’為將此乾材加工成形為既定尺寸，或為將表面形 、’滑.’而施行平面研料機械研磨。換句話說，-般濺 鍍靶至少要經由機械研磨步驟而製得。 依此方式在經由機械研磨步驟而所製得的靶表面上， 能存在隨研磨步驟等而引起的#期粉粒、或隨雜 ^ L衝擊而從表層上脫離並形成粉粒的部分。此粉粒在 錢鑛之際，將附料基板上而產生薄膜缺陷，此外，隨再 附著、沉積妹上而將因結棟而產生黑色附著物，導致電 弧產生的原因，而可判定將產生新的粉粒。 所以，在本發明中，對經由機械研磨步驟而所製造的 歲齡之減鍍面，施行如後述的特定.處理，藉由去除此種 粉粒、或隨濺鍍時的熱衝擊而較容易脫離的部位，便可有 效的降低初期電弧。 〈本發明之第一態樣&gt; 首先，針對本發明第一態樣進行說明。 丰本發明第-態樣的雌㈣如上述依常法，經機械研 磨步驟而製作濺鍍靶之後，戋在 理，而實質的消除細微^ “過㈣施行後述的處 機械研磨因為屬於利用高速旋轉磨具之磨砂刀刀進行 力在rrf被Γ工物白_，因此隨與磨砂間的接觸應 力在乾的表面（特別係供濺錢用#φ，以下稱「I面」）、 314023D01 10 •1310409 :内邛中將產生龜裂。此種龜裂中，可從表面觀察到的 龜襄丄雖被認為是研磨損傷或加工缺陷，但是截 =刖為止’並未針對從濺鍍面朝内部方向延伸的細微龜 裂進行任何探討。 、曰Μ龜4在形狀（深度與長度等）、或數量等的產生 =度雖有所差異，但只要是經由機械研磨步驟將不可避免 二生而產生的程度將受機械研磨步驟中所採用的磨具 荷重、速度、磨砂形狀、被加工物材質等的影響。 士發明第一態樣中，便著眼於此細微龜裂，可提供一 種可貫質上消除具特定值以上深度與長度的細微龜裂，並 有效防止產生初期電弧的靶。 換句話說，如前述，所有細微龜裂的存在並不是造成 產生初期電弧的原因’而是具特定值以上深度與長度之細 微龜裂的存在，才是造成初期電孤的產生原因。當剖面觀 ^之減鍍面的情況時’藉由實質上消除此類特定細微龜 衣，便可有效的防止初期電弧的產生。 具體而吕，本發明第一態樣的錢鏡革巴係經由機械研磨 步驟一而所製得的濺鍍無’當剖面觀察輕之⑽面的情況 時:貫質上已消除失深度15/zm以上且長度4〇㈣以上(最 好冰度10#m以上且長度3〇y m以上）的細微龜裂。 匕处·所叫貝貞上消除細微龜裂，係指對把施行細螽 裂去除處理’直到當剖面觀察乾之雜面的情况時'，並未 發現具上述特定值以上深度與長度的細微龜裂。 具體而言，乃意味著當剖面觀察靶濺鍍面之際，在寬 314023D01 11 1310409 度方向上，長度2. 5mm範圍内’並未發現到深度15&quot;出以 上且長度40“m以上（最好深度1〇#m以上且長度 以上）的細微龜裂。此乃即便存在深度與長度均低於上述值 之細微龜裂的話’在此情況下，該細微龜裂本身將不致形 成產生電弧的原因，而且亦不致隨濺鍍時的熱衝擊而引起. 切割傷並產生粉粒產生源的現象。 士更具體而言，當剖面觀察上述濺餘之賤鐘面的情況 時，並未發現具上述特定貧以上之深度與長度的細微龜 裂，甚至於深度5/zm以上並低於心m、且長度1〇&quot;以馨 上並低於30#m的細微龜裂數量，在截面的寬度方向上， 平均長度2. 5mm，最好在5個以下’尤以在3個以下為隹， 更以在1個以下為更佳。 當然，當刮面觀察靶濺鍍面之情況時， 庐 的細微龜裂，換句話說，上述細微龜裂的數量，最好在截 面的寬度方向上，平均長度2. 5mm為〇個。 但是，若龜裂數在5個以下（最好為3個以下，尤以在 1個以下為佳）的話，便可有效的降低初期冑弧，而不致對 濺鏡造成阻礙。 ^在此，靶濺鍍面的剖面觀察之手段.，具體而言，嬖如 採用光學顯微鏡、電子顯微鏡掃 &quot; &amp; ，項倣鏡卸捂型電子顯微鏡（SEM) 4的顯微鏡觀察.。 但是，乾的麟面乃如前述，通常因為經由機械研磨 乂驟而具有細微凹凸，而上述細微龜裂的深度與長度將進 314023D01 12 1310409 行何種的設定便將造成問 細微龜裂的深度與長度之t ::本說明書中’相關 明。 又義’便根據第1圖進行以下說 在本說明書中，所謂細列 - y- r ^ 、’诚龜表的深度，係如第1圖所 不，絲厚度方向的截面3中，從存在細微龜丄【斤 所對應的濺鍍面1，與截面 11域 ^ t A 戳面3所形成的稜線最高之山頂起， 直到細微龜裂5最深處為止，稱為深度D。 闽再者，在本說明書中，所謂細微龜裂長度係指如第」 圖所示，截面3之細微龜裂彳γ ..士政口妨 在水平方向上的最大距離L。 θ 一悲樣的濺鍍靶僅要實質上已將且特 定值以上深度盥長声之鈿奴Α , 貝負上匕將，、特 、長度之細微龜裂消除的靶的話便可。靶濺 ==表面粗糙度（_度曲線的算數平均造） 據㈣晴刪)進行測量）可在ι.一以上弋可(:' 1.5/zm以上，亦可為2 〇/zm以上。 所以’本發明第一態樣的賤鏡無，在為如習知所施行 般的降低表面粗糙度方面’因為靶表面並未必要研磨為平 Γ因此便可省略此種研磨步驟，而簡化生產步驟，並提 昇靶之生產性。 再者’此外即便無的R a低於L 〇私m之情況時，當然 亦仍適合於本發明。 ’ 在獲得本發明第一態樣的濺鍍乾（換句話說，實質上已 消除具特定值以上深度與長度之細微龜裂的乾）方面、，必須 ^于細微龜裂去除處理，直到並未發現如上述特定細微龜 314023D01 13 1310409 貫質上消除此種細微龜裂的方法(細微 艾僅f實質上可_上述細微龜裂的話，便可採用= ’ s如可例舉如對靶的溅鍍面，施行嚴格控制著研磨 或旋轉速度等的精密研磨、_處理、雷射處理、 乾式蝕刻處理、噴砂處理等等方法。 命該等之中，絲之生產性較佳的觀點而言，最好為賤 .鍍處理、雷射處理、乾式蝕刻處理。 以下，就細微龜裂之去除處理，舉餘之濺鑛面施行 濺鍍處理的方法為例進行具體的說明。 實質上使上述細微龜裂消失的方法（細微龜裂的去除 =理），係當採用讀處理之情況時，對濺鍍方式、錢艘氣 體及氣體壓力等條件並無特別的限制，可配合需要進行適 當的選擇。譬如濺鑛氣體可配合需要在氬等情性氣體中使 用乳軋，並最好將該等的氣體壓力設定為！至ι〇πτ〇π。 士再者，濺鍍之際的積分投入功率量（Wh/cin2)(即，濺鍍 ¥所投入之平均乾單位面積的總功率量）’最好為U至 l〇Wh/cm2，尤以〇.5至5Wh/cm2範圍為佳。 若積分投入功率量在上述範圍内的話，除實質上可使 細微龜裂消失之外’就減鍍乾之製造上所需的時間及生產 成本等生產性方面而言均較為有利。 /、體而σ，言如在採用DC磁控濺鍍方式的濺鍍裝置 中’設置經機械研磨步驟而所製得之乾（亦可為接合於底板 上），，後採用上述組成的雜氣體，直到達上述積分投入 功率量為止均施行舰處理，便可獲得本發明第一態樣的 314023D01 14 1310409 濺鍍乾。 所獲传乾在當剖面觀察濺 上之深度與長度的細微 ㈣Ί叫’具特定值以 ^ 遇裂只質上已消失，.若ίέτ+··ι- 種靶的濺鍍法而形成 月天右猎由採用此 之產生，… 便可有效的防止初期雷孤 產生且具優越的初期電弧特性。月電弧 本么明帛一態樣之濺鍍靶的初期電弧特性在链 裝置採用&quot;電弧監視器(_Genes: 口 =測量 行薄膜形成之際，;施行過上述處理的乾而執 量⑽/cm2)的累積電弧次曰數订雜時的積分投入功率 的濺㈣係對此種積分产入評估。本發明第一態樣 且初期電弧特性較佳。又 里的累積電弧次數較少， &lt;本發明之第二態樣&gt; 其次’針對本發明之第二態樣進行㈣。 在從it:態樣的賤爾對乾材施行機械研磨後， 在從=㈣商出貨前，便已預先對魏面施行濺鑛處理。 座牛/述’㈣電弧的原因’可認為乃因在經由機械研 製得濺餘之賤鍍面上，存在粉粒、或隨祕 Η寸的熱衝擊而較容易脫離的部位。 斤、#可藉由預先對錢錄乾之濺鑛面本身施行藏鍍 :理，而將此種微粉或隨濺鍍時的熱衝擊而較容易產生脫 的4位^賤鐘面上予以去除的話’便效的降低初 期電弧。 另外，即便在此情況下，上述部位是否隨賴時的熱 314023D01 15 1310409 衝擊而產生脫離，可認為將依存於存在有隨機械研磨而從 靶表面至内部產生的細微龜裂，特別係具有如本發明第— 態樣之特定值以上深度與長度的細微龜裂。 所以在本發明弟一態樣中，亦最好藉由對濺鏡乾的 濺鍍面預先施行濺鍍，而如本發明第一態樣，形成將具特 疋值以上之深度與長度的細微龜裂，實質的予以消除的 乾。但疋’當並未要求至此種性能之情況時，則並未必 定於此.。 , 、換句純，在本發m樣巾，預先施加於濺錄 之濺鍍面上的齋鍍處理用積分投入功率量， 〇.〇〇5Wh/em2以上，尤以在G·嶋/on2以上為佳，更以在 〇二2Wh/cm2以上為更佳’特別以在〇肩心2以上為佳。 :所謂的積分投入功率量(Wh/cm2)係指對出貨前的靶之 預先綺濺㈣理，其平均單位面制投人的積分 若上述積分投入功率量在〇 〇〇_心2以上的話， =亍該_處理的乾，在初期電弧特性上將較佳，且: 上二便不需要進行空運轉，可直接採用該濺錄w :有專:成形用的濺鑛處理，而提昇薄 生產 性並有效率的執行薄膜形成。王座 制t 先執行賤鏡處理的濺錢條件並盎特別的π 分投入功率量為止的話便可。_處理直到達上述積 314023D01 16 ’1310409 再者，本發明第二態樣中，積 並無特別的限制，1β '又入功率罝的上限值 i日;I丨艮制，就濺鍍靶製 產性觀點而言:通常最好在磨hAj=間、成本面等生(The method of the method can be, for example, CP (Cold phantom method, (hot pressing) method, HIP U method, etc.) The cp method fills the mixed raw material powder into a mold to form a formed body and is in the atmosphere. 々 々 充 捍焯忐 捍焯忐 捍焯忐 捍焯忐 捍焯忐 捍焯忐 η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η η :, in the rubber: = or even in the u will still form the covering: After sealing and degassing, insert into the container, and apply an isotropic addition of a through the inactive heart to perform heating sintering. The Qianshen Media's phlegm-dampening method is similar to the (four) type forming method described in the Japanese invention patent special Kaiping u 。. This type of material is reported in the public to reduce the water and obtain the formed body, : 仗) competition raw materials:: composition Over-type forming die, in this type of forming die: water: property: mixed raw material powder, ion-exchanged water, enthalpy/into the aggregate, decompression to remove moisture in the slurry to prepare: agent After the composition is dried and degreased, it is sintered. ^ 'This shaped body 3I4023D01 9 .1310409 In each of the above methods, the sintering temperature is preferably an appropriate temperature set in accordance with the raw materials used. As described above, "forming the raw material in a mold and sintering it to produce a target" is to form the dried material into For a given size, or for the surface shape, 'slip.', a planar grinding machine is mechanically ground. In other words, the sputtering target is at least produced by a mechanical grinding step. In this way, through the mechanical grinding step. On the surface of the target to be produced, there may be a #-phase powder particle which is caused by a grinding step or the like, or a portion which is detached from the surface layer and forms a powder particle with the impact of the impurity, and the powder particle is attached at the time of the money mine. A film defect occurs on the substrate, and a black deposit is generated due to the reattachment and deposition, which causes a generation of an arc, and it is determined that a new powder is generated. Therefore, in the present invention, For the age-reduced plating surface produced by the mechanical polishing step, a specific treatment as described later can be performed by removing the powder or the portion which is easily separated by thermal shock during sputtering. Effective drop Low initial arc. <First aspect of the present invention> First, the first aspect of the present invention will be described. The female (four) of the first aspect of the present invention is subjected to a mechanical grinding step as described above according to the usual method. After the target, the ruthlessness is removed, and the substantial elimination of the fine ^ "over (four) after the implementation of the mechanical grinding, because of the use of high-speed rotating abrasive abrasive blade knife force in the rrf is finished white _, so with the matte The contact stress is on the dry surface (especially for splashing money #φ, hereinafter referred to as "I surface"), 314023D01 10 • 1310409: cracks will occur in the inner ridge. In this crack, the turtle can be observed from the surface. Although it is considered to be a grinding damage or a processing defect, it does not discuss any fine cracks extending from the sputtering surface toward the inside. The size of the turtle 4 is different in shape (depth, length, etc.), or the number of generations, etc., but the degree of occurrence of the inevitable life through the mechanical grinding step will be adopted in the mechanical grinding step. The weight of the abrasive, the speed, the shape of the matte, the material of the workpiece, etc. In the first aspect of the invention, attention is paid to the fine cracking, and it is possible to provide a target which can eliminate fine cracks having a depth and length of a specific value or more, and effectively prevent an initial arc. In other words, as described above, the presence of all the fine cracks is not the cause of the initial arc, but the presence of a microcrack having a depth and a length of a specific value or more is the cause of the initial electric orphan. When the profile of the reduced surface is observed, the initial arc generation can be effectively prevented by substantially eliminating such specific fine turtles. Specifically, the first aspect of the present invention is characterized by the fact that the sputtering process produced by the mechanical grinding step 1 does not have a '10' surface when the cross section is observed: the depth has been eliminated 15/ Fine cracks of zm or more and a length of 4 〇 (four) or more (preferably, the ice degree is 10 #m or more and the length is 3 〇 ym or more).匕 · 所 所 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除 消除Cracked. Specifically, when the cross-section of the target sputter surface is observed, in the direction of width 314023D01 11 1310409 degrees, the length of 2. 5mm is not found to be 15&quot; Fine cracks with a depth of 1 〇#m or more and longer than this. This is even if there is a slight crack with a depth and length lower than the above value. 'In this case, the fine crack itself will not form an arc. The reason, and it is not caused by the thermal shock during sputtering. The cutting injury and the generation of the powder source. In particular, when the section of the clock surface of the splash is observed, it is not found. The above-mentioned specific depth and length of the fine crack, even above the depth of 5 / zm and below the heart m, and the length of 1 〇 &quot; the number of fine cracks in the sin and less than 30 #m, in the cross section In the width direction, the average length is 2. 5mm, preferably 5 or less. In particular, it is preferably 3 or less, and more preferably 1 or less. Of course, when the scraping surface is used to observe the target sputtering surface, The tiny cracks of the dragonfly, in other words, the above-mentioned fine turtle The number of cracks is preferably in the width direction of the cross section, and the average length is 2. 5 mm. However, if the number of cracks is 5 or less (preferably 3 or less, especially preferably 1 or less) , can effectively reduce the initial xenon arc, without causing obstacles to the splashing mirror. ^ Here, the target of the target sputter surface observation. Specifically, for example, using optical microscope, electron microscope sweep &quot;&amp; Microscope observation of the SEM image 4. However, the dry lining is as described above, and usually has fine irregularities due to mechanical grinding, and the depth and length of the above-mentioned fine cracks will be 314023D01 12 1310409 What kind of setting will cause the depth and length of the micro crack? :: In this manual, 'relevantly related. Also meaning' will be described below according to Figure 1. In this specification, the so-called column - y-r ^, 'The depth of the natural turtle table, as shown in Figure 1, the cross section 3 in the thickness direction of the wire, from the presence of fine turtles [the corresponding sputtering surface 1 and the section 11 domain ^ t A The top of the ridge line formed by the face 3, Until the finest crack 5 is deepest, it is called depth D. In addition, in this specification, the so-called fine crack length means the fine crack of the section 3 as shown in the figure. The maximum distance L in the horizontal direction. θ A sad-like sputter target can only be used for a target that has a depth of more than a certain value and a long sound, and a target that is finely cracked and removed. Target splash == Surface roughness (calculation of the average of the _ degree curve) According to (4) Clearing) Measurements can be made in ι. One or more (: '1.5/zm or more, or 2 〇/zm or more. 'The first aspect of the present invention does not reduce the surface roughness as is conventionally done' because the target surface does not have to be ground to a flat surface, so that the grinding step can be omitted and the production steps can be simplified. And improve the productivity of the target. Furthermore, in addition, even if there is no R a lower than L, it is of course still suitable for the present invention. 'In the first aspect of the invention, the sputtering is dry (change) In other words, the aspect of the fine cracking of the depth and length with a specific value or more has been eliminated, and the fine crack removal treatment must be performed until the specific fine turtle 314023D01 13 1310409 is not found to be eliminated. A method of finely cracking (a fine AI only f can be substantially _ the above-mentioned fine cracking, you can use = ' s, for example, for the sputtering surface of the target, strict control of the grinding or rotation speed, etc. Grinding, _ processing, laser processing, dry etching Processing, sand blasting, etc. Among the above, in terms of the productivity of the wire, it is preferable to carry out the plating treatment, the laser treatment, and the dry etching treatment. The method of performing the sputtering treatment on the spattered ore surface is specifically described as an example. The method of substantially eliminating the above-mentioned fine cracks (removal of fine cracks = rationality) is when the read processing is used, The conditions of the sputtering method, the gas and the gas pressure are not particularly limited, and may be appropriately selected in accordance with the need. For example, the splashing gas may be used in conjunction with the argon gas, and it is preferable to use the same. The gas pressure is set to ! to ι〇πτ〇π. In addition, the integrated input power (Wh/cin2) at the time of sputtering (ie, the total amount of power per unit area of the average dry unit input by sputtering) Preferably, it is U to l〇Wh/cm2, especially preferably in the range of 〇5 to 5Wh/cm2. If the integrated input power is within the above range, the plating is reduced except that the fine crack is substantially eliminated. Time required for manufacturing and production costs, etc. In terms of productivity, it is more advantageous. /, body and σ, as in the sputtering device using DC magnetron sputtering, 'setting the mechanical grinding step to make the dry (can also be bonded to the bottom plate) After that, the gas of the above composition is used until the above-mentioned integrated input power amount is applied to perform the ship processing, and the first aspect of the present invention can be obtained by sputtering 314023D01 14 1310409. The obtained dryness is observed when the profile is splashed. The depth and length of the top (four) squeaking 'has a specific value to ^ cracked only on the quality has disappeared. If the έ έ + + · · ι - the target of the sputtering method to form the moon right hunting by the use of this,... It can effectively prevent the initial generation of lightning and has excellent initial arc characteristics. The initial arc characteristic of the moon-shaped arc-like sputtering target is adopted in the chain device &quot;Arc monitor (_Genes: mouth = measurement line) At the time of formation of the film, the cumulative input power of the dry (quantity) (10)/cm2) subjected to the above-described treatment is the evaluation of the integral input power. The first aspect of the invention and the initial arc characteristics are preferred. Further, the number of accumulated arcs is small, &lt;Second aspect of the present invention&gt; Next, the fourth aspect of the present invention is carried out (4). After the mechanical grinding of the dry material from the it: the appearance of the dry material, before the shipment from the = (four) business, the surface of the surface has been pre-sprayed. The reason why the cow is described as the "fourth arc" is considered to be due to the fact that there is a powder particle or a portion which is easily separated from the thermal shock of the crucible on the plated surface which has been splashed by mechanical grinding.斤,# can be removed by pre-existing the splashing surface of the dry surface of the money recording, and removing the micro-powder or the 4-position surface of the smashing surface which is more likely to be generated by thermal shock during sputtering. The words 'effectively reduce the initial arc. Further, even in this case, whether or not the above-mentioned portion is detached by the impact of the heat 314023D01 15 1310409 at the time of the glare is considered to be dependent on the presence of fine cracks generated from the target surface to the inside with mechanical grinding, particularly A fine crack of depth and length above a specific value of the first aspect of the present invention. Therefore, in one aspect of the present invention, it is also preferable to perform sputtering on the sputtered surface of the splash mirror in advance, and as in the first aspect of the present invention, the depth and length of the sprite having a characteristic value or more are formed. Crack, the essence of the dry to eliminate. However, when it is not required to achieve such performance, it is not necessarily the case. , in other words pure, in the hair m sample, the amount of integrated input power applied to the sputtered surface of the splashed surface, 〇.〇〇5Wh/em2 or more, especially in G·嶋/on2 The above is better, and it is better to use it at 2Wh/cm2 or more, especially in the shoulder 2 or more. : The so-called integral input power amount (Wh/cm2) refers to the pre-splashing (four) principle of the target before shipment, and the average unit-level investment of the integral is the above-mentioned integral input power amount in the 〇〇〇_heart 2 or more. If it is, the dryness of the treatment will be better in the initial arc characteristics, and the upper two will not need to be idling, and the smear can be used directly: there is special: splashing treatment for forming, and lifting Film formation is performed thinly and efficiently. The throne system t is the first to perform the splashing condition of the frog mirror processing and to input the power amount with a special π division. _Processing until the above product 314023D01 16 '1310409 Furthermore, in the second aspect of the present invention, there is no particular limitation on the product, and the upper limit value of the 1β 'input power i is i day; From a production point of view: it is usually best to grind hAj=, cost surface, etc.

上述革巴之初期電弧特性係 A 理之情況時，可利用直到丄Λ:用&quot;料進行輯 投入的積分投入= 執行賤鍍處理㈣㈣置乃讀估。具體而言，當 技公^八^ 乃㈣電弧計數器（藍德馬克科 β α5 ，音譯）產製）感測出電弧，並利用截至ωβ 吋靶的初期電弧收虔A 卫扪用截至ρδ 電弧與次&quot;'個電輯的產生 :=二以上為止)的積分投入功率量進行評估。此積 二：:力的值越小的話’且電弧產生次數越少的話，、 靶之初期電弧特性可謂將越佳。In the case where the initial arc characteristics of the above-mentioned Geba are in the case of A, it is possible to use the integral input of the 丄Λ: using the &quot;material; = performing the 贱 plating process (4) (4). Specifically, when the gong gong 八 ^ 乃 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The amount of integrated input power is evaluated with the number of times "the generation of the electric series: = two or more." If the value of the force is smaller, and the number of arc generations is smaller, the initial arc characteristics of the target will be better.

行靜i f在本發明第一態樣中，為對歡之賤鍍面預先施 H、又处王’通常將本發明第二態樣之減鍍輕的表面粗糙 度:a設定為大於剛完成機械研磨後的初始值。所以，本 明弟二態樣之賤㈣的Ra亦可設定為大於習知較佳的U ㈣。此外’即便乾之心在〇 5_以下的情況下，當然亦 可適用於本發明第二實施態樣。 再者本说明書中所謂的表面粗糙度h係指根據 B 0601 (1994年）而所測得粗趟度曲線的算數平均粗棱度。 更具體而言，本發明第二態樣之雜柄Ra值係若繼 績濺鍍的話’便將無關於初期值而將收束於大致一定值， 就_處理的生產性觀點而言，越|&amp;的Ra值可設定在 (^至^^範圍内’亦可設定在^至^^範圍内。 314023D01 17 1310409 處理:態樣的崎係對_面施行藏鍍 麦取好馬上在濺鍍面上貼附表面保護 — 此保護薄膜貼附於濺鍍面上的話， 雜夂、。右將 體吸附於濺鍍面上。 、雜質附著、氣 上述表面保護薄膜乃為防止 鍍面上，僅要至少貼附於齡面上可 ㈣。表面保護薄膜的貼附方法，可舉例k : :膜密貼附在濺鑛面上的方法，亦可採用樹脂製薄 ς體施灯真空包|的方法。其中，真空包裝利為薄 =間較難殘留氣泡，因此屬較佳方法。使用為表=護 #目此《朴时含麟性粉粒⑽ 說明其次，針對本發明第二態樣之錢㈣的製造方$行In the first aspect of the present invention, in order to apply H to the plating surface of Huanqiu, and then to the king, the surface roughness of the second aspect of the invention is generally set to be lighter than the finish. The initial value after mechanical grinding. Therefore, the Ra of the second aspect of the present invention (4) can also be set to be larger than the well-known U (four). Further, it is of course applicable to the second embodiment of the present invention even if the dry heart is below _5_. Further, the surface roughness h referred to in the present specification means the arithmetic mean coarseness of the roughness curve measured in accordance with B 0601 (1994). More specifically, if the value of the Ra handle of the second aspect of the present invention is to be sputtered, it will be converged to a substantially constant value regardless of the initial value, and in terms of the productivity of the treatment, the more The Ra value of |&amp; can be set in the range of (^ to ^^'. It can also be set in the range of ^ to ^^. 314023D01 17 1310409 Processing: The pattern of the slate is on the _ surface. Surface protection on the plated surface - if the protective film is attached to the sputtered surface, the crucible, the right body is adsorbed on the sputtered surface. The impurity is adhered to, and the surface protective film is used to prevent the plating surface. It should be attached to at least the age of the face (4). The method of attaching the surface protective film can be exemplified by k: : the method of attaching the film to the splashing surface, or using a resin-made thin body to apply the vacuum package | The method of vacuum packaging is thin = it is difficult to leave air bubbles, so it is a preferred method. The use is Table = Guard #目 This "Park time arsenic powder (10) is explained next, for the second aspect of the present invention Money (4) manufacturer's line

本發明第二態樣之賤鍍乾的製造方法，係對乾（最好刺 用燒結法所製_)的表面施行機械研磨，其次 預先對此靶的至少濺鍍面施行濺鍍處理。 、月J =者田本發明第二態樣之舰革巴屬於H賤鐵革 情況時，、該ΙΤ0賤鍍革巴的製造方法，乃對以氧化銦與氧化In the second aspect of the present invention, the surface of the ruthenium plating is subjected to mechanical polishing on the surface of the dry (preferably by the sintering method), and secondly, at least the sputtering surface of the target is subjected to a sputtering treatment. , month J = the second aspect of the invention, the ship's leather bar belongs to the case of H贱 iron leather, the manufacturing method of the ΙΤ0贱 plating bar is to indium oxide and oxidation

錫為主成分的原料，進行燒結處理而所獲得的IT 施行機械研磨，然後在出貨前，便預先對賤鏡心 鎪面施行藏鏡處理。 錢 本發明第二態樣的缝萆巴之製造方法，除對賤鏡 歲鍍面施行錢鍍處理之外，其餘均可使用—般巍鑛乾的製 314023D01 18 1310409 造方法。 、句話說如上述’藉由燒結法（粉末冶金法）、或真 二，解法等，使原料在模具内成形之後，經燒結、或禱造 、衣作乾材。然後’為將此無材加工成形為既定尺寸，或 為，表面形成平滑，而施行平面研磨等機械研磨。此外， U在機械研磨之後’便烊接於底板上而形成藏鍵革巴。 上述機械研磨’ _般配合需要而適當的採取平面研 麻=轉研磨、切等方法，在施行為上述成形加工的研 *游1、W為調整厚度’而對表面施行粗研磨，然後為使表 二:：’月’而階段性的使用細粒磨砂，而施行精研磨(以 下亦稱「研磨，、，忐 、）次施仃以玻璃珠、鋁珠、锆珠等為投射 磨」、）、/而所進行的研磨（以下，合併精研磨稱之為「研 表面：發：第二態樣的崎之製造方法，在如上糖 2施賴械研磨後，於出貨前㈣辆 研磨後實施，亦可在斧研= ° 處理可在粗 底板後才實施。後、喷砂的研磨後、或焊接於 研磨之賤鍍面施行_處&quot; 粉末、韻 令易脫離的處所予以去除，蛀 4手7平乂 所以，依照本發明第一、、、;/的可有效的降低勒期電弧。 鏡面狀平清的研磨，且；：=的二？便未對表面施行 用粒度較細的嘴砂處理，亦可养:上:制表面粗較度而利 J J獲仵降低初期電弧且可有效 314023D01 19 1310409 施行濺鍍處理㈣。換句話說，當採 靶之情況時，可省略研磨步驟，藉由：：第二態樣的 鍍處理，便可形成濺鍍靶。 、 濺鍍面施行濺 [發明效果] ' 依照第一態樣的話，女 產生細微龜裂的電弧產生，特別:源自機械研磨時所 效’可明顯的提昇初期稃生氏初期電弧更為有The raw material of tin as the main component is subjected to sintering treatment, and the obtained IT is subjected to mechanical polishing, and then the mirror is processed in advance before shipment. The manufacturing method of the second aspect of the invention is not limited to the method of manufacturing the 314 巍 岁 岁 岁 314 314 314 314 314 314 314023D01 18 1310409. In other words, as described above, the raw material is formed in a mold by sintering (powder metallurgy), or the second method, solution, etc., and then sintered, or prayed, and cloth is used as a dry material. Then, mechanical processing such as planar polishing is performed to shape the unprocessed material into a predetermined size or to form a smooth surface. In addition, after mechanical grinding, U is attached to the bottom plate to form a Tibetan key. In the above-mentioned mechanical polishing, it is necessary to adopt a method such as plane grinding, turning, and cutting, and to perform rough grinding on the surface of the above-mentioned forming process, and to adjust the thickness, and then to Table 2:: 'Month' and the use of fine-grained sanding in stages, and fine grinding (hereinafter also referred to as "grinding, grinding, 忐,"), using glass beads, aluminum beads, zirconium beads, etc. as projection projections, ) and / or the grinding performed (hereinafter, the combined fine grinding is called "grinding surface: hair: the second aspect of the method of manufacturing the Saki, after the above-mentioned sugar 2 polishing machine, before the shipment (four) grinding After the implementation, it can also be carried out in the axe grinding = ° treatment can be carried out after the rough bottom plate. After the grinding, after sandblasting, or welding on the polished enamel plating surface, the _ place &quot; powder, rhyme easy to remove the space to remove Therefore, according to the invention, the first, the, and the / can effectively reduce the arc of the arc. The mirror-like clear grinding, and: = = two, the surface is not used for particle size comparison Fine mouth sand treatment, can also be raised: on: the surface roughness and the benefit of JJ won Low initial arc and effective 314023D01 19 1310409 Sputtering treatment (4). In other words, when the target is taken, the grinding step can be omitted, and the sputtering target can be formed by the plating treatment of the second aspect. Splashing on the sputtered surface [Invention effect] 'According to the first aspect, the woman produces a fine cracked arc, especially: from the mechanical grinding effect, it can obviously improve the initial stage of the early generation of the twin arc.

:者’依照本發明之第二態樣的話，可獲得有 初期電弧的初期穩定性較高之滅餘。藉用 化 :行:咖，便可有效率提昇生產性並形成高性能= _低成本1 =略研磨步驟，因此亦可簡化研磨步驟 言施例 以下，根據實施例針對本發明進行更詳細說明 發明並不僅限於該尊實施例。According to the second aspect of the present invention, it is possible to obtain a high level of initial stability of the initial arc. Borrowing: line: coffee, can effectively improve productivity and form high performance = _ low cost 1 = slightly grinding step, so it can also simplify the grinding step. The following examples, the present invention will be described in more detail according to the embodiment. The invention is not limited to the embodiment of the invention.

首先，本發明第―實施態樣的實施例及比較例教述如 下。 SAfeLAi . 〈靶之製造〉 實施例A1至3及比較例A1中所採用的靶，乃依如下 方式所製得。 將In2〇3粉與Sn〇2粉依in2〇3 : Sn〇2=90 : 1〇質量％的比 進行混合，並依常法製作IT〇燒結體而形成靶材。此靶材 314〇23D〇l 20 1310409 的相對密度為99.7%。 、，將此靶材依p l0l 6mm切成8片，並將該等安置於同 平面研磨盤上’然後再利用# 17 〇的鑽石磨具對濺鍍面與 焊接的面（焊接面）進行雙面研磨，而獲得厚度6咖的靶First, the embodiments and comparative examples of the first embodiment of the present invention are as follows. SAfeLAi. <Manufacture of target> The targets used in Examples A1 to 3 and Comparative Example A1 were obtained in the following manner. The In2〇3 powder and the Sn〇2 powder were mixed at a ratio of in2〇3 : Sn〇2 = 90 : 1 〇 mass %, and an IT 〇 sintered body was produced by a usual method to form a target. The relative density of this target 314〇23D〇l 20 1310409 was 99.7%. Cut the target into 8 pieces according to p l0l 6mm, and place the same on the same plane grinding disc. Then use the #17 〇 diamond grinding tool to cast the sputtered surface and the welded surface (welded surface). Double-sided grinding to obtain a target with a thickness of 6

No. al 至 a8。 f施例A1 &lt;細微龜裂去除處理〉 將上述製造例A1所獲得的靶N〇 al及a2，分別焊接 於鋼製底板之後，再安裝於雜裝置（Εχ_3()13Μ，真空器械 工業公司產製）上，然後依下述條件施行為去除細微龜裂用 的濺鍍處理。 少 (濺鍍條件）濺鍍方式：DC磁控濺鍍 處理氣體：Ar 處理壓力：3mTorr 氧分屋：〇. OgmToi'i· 投入功率：3W/cm2 積分投入功率量：l〇Wh/cm2 對此濺鍍處理前後的乾No. al&amp;a2之錢鍍面的表面粗 糙度’根據JISB 0601 (1994)且表面粗糙度計採用邠17〇〇 (小坂研究所產製）’依觸針半徑：、饋送速度Hm/ Γ:果止如 &lt;靶之截面觀察&gt; 採用研磨盤（岡本工作機械公司產製），利用㈣5麗 314023D01 21 1310409 x厚度Ιπππ的鑽石幻80切斷刀，對經施行過上述濺鍍處王 的靶No. al ’朝厚度方向進行切斷。 ^ ^ 'No. al to a8. fExample A1 &lt;Subtle crack removal treatment> The targets N〇al and a2 obtained in the above Production Example A1 were respectively welded to a steel base plate, and then mounted on a miscellaneous device (Εχ_3()13Μ, Vacuum Instrument Industry Co., Ltd. On the production system, the sputtering treatment for removing fine cracks is then carried out according to the following conditions. Less (sputtering conditions) Sputtering method: DC magnetron sputtering process gas: Ar Processing pressure: 3mTorr Oxygen room: 〇. OgmToi'i· Input power: 3W/cm2 Integral input power: l〇Wh/cm2 The surface roughness of the surface of the dry No. al&a2 before and after the sputtering treatment is 'according to JIS B 0601 (1994) and the surface roughness meter is 邠17〇〇 (manufactured by Otaru Research Institute)' according to the stylus radius: Feeding speed Hm/ Γ: If the result is as follows, the cross section of the target is observed. Using a grinding disc (manufactured by Okamoto Machine Co., Ltd.), using a diamond phantom 80 cutting knife with a thickness of Ιπππ (5) 5 314023D01 21 1310409 The target No. al ' of the above-mentioned sputtering site was cut in the thickness direction. ^ ^ '

其次，採用研磨盤（岡本工作機械公司產製）利甩 _順厚们_的細鑽石輪，對上述乾 面進行研磨。 J 其次，採用單面研光機（速彼得發姆公司（公司名、音 #)產製），使用GC#1000的游離磨砂，對上述靶此d的 切剖面進行研光。 ' 其次，採用單面研光機（速彼得發姆公司（公司名，立 產製），使用平均粒徑的鑽石磨砂，對上述^ No. al的切剖面進行拋光處理。 央風2㈣I』1的切剖面使用光學顯微鏡[奥林巴斯 _ 曰澤）產1，BX50-33P(附落射裝置）] 進仃觀察。結果如第1表中所示。 〈初期電弧特性之評估&gt; 如同靶No.ai，以經施行濺鍍處理來作為細微龜裂去 :::的靶N〇. a2，安裝於濺鍍裝置(EX-3013M，真空器械 ^車製）上，然後依下述條件施行為形成薄膜用的賤 = = 並抓用&quot;電弧監視器（MAM Genesis)(藍德馬克科 後公司（公司名，立士罢、 抓 9 11 )產製）進行感測該濺鑛時所發生的電 第1本J的賤锻條件與電弧感測條件係如下所述 。結果如 弟1表中所示。 (濺鍍條件） J賤緩方式·· DC磁控濺鍍 處理氣體：Ar 22 314023D01 1310409 處理壓力：3mTo;rr 氧分壓：0. 02mTorr 投入功率：3W/cm2 價at八功竿 Λ電狐監視器感測條件）感測模式：能量Next, the above-mentioned dry surface was ground using a grinding disc (manufactured by Okamoto Machine Co., Ltd.) with a fine diamond wheel. J Next, the cut surface of the target d was polished using a single-sided polishing machine (speeded by Peter Pem (company name, sound #)) using a free scrub of GC#1000. 'Secondly, the single-faced rayon machine (speed Peter's company (company name, established system), using the diamond grinding of the average particle size, polished the cut section of the above ^ No. al. Central wind 2 (four) I 』 1 The cut section was observed using an optical microscope [Olympus _ 曰泽)1, BX50-33P (with an epi-illumination device). The results are shown in Table 1. <Evaluation of initial arc characteristics> Like the target No. ai, the target is sprayed as a fine crack::: target N〇. a2, mounted on a sputtering device (EX-3013M, vacuum instrument) On the basis of the following conditions, the film is used to form the film 贱 = = and grab the &quot;Arc Monitor (MAM Genesis) (Landmark Co., Ltd. (company name, Lishi, grab 9 11) The electric forging condition and the arc sensing condition of the first J which are generated when the sputtering is sensed are as follows. The results are shown in Table 1 of the brother. (Sputter condition) J 方式 方式 · · DC magnetron sputtering process gas: Ar 22 314023D01 1310409 Processing pressure: 3mTo; rr Oxygen partial pressure: 0. 02mTorr Input power: 3W/cm2 Price at eight power 竿Λ electric fox Monitor sensing condition) sensing mode: energy

電弧感測電壓：loov 大-中能量邊界：50mJ 硬電弧最低時間：1QM 裂去與a4取代把No.al舆a2 ’並將細微-1叫“二仃：_處理條件中的積分投入功率” A1。結果如其餘實施方式均如同㈣ 實施例A&amp; 去除ΐ=Γ.，5與a6取代N°_al與a2 ’並將細微龜 處理所執行之_處理條件中的積分投入功率量 :，崎為3wh/cm2之外，其餘實… A1。結果如第丨表中所示。 比較例A1_ 除用乾17與4取代N〇.aua2，且並未執行細 微龜裂去除處理之外，其餘實施方式均如同實施例Μ。結 果如第1表中所示。 314023D01 23 1310409 第1表 靶 No. 細微龜裂數（個）* 濺鍍（龜裂 去除處理） 前的表面 粗糙度 Ra( β m) 濺鍍（龜裂 去除處理） 後的表面 粗糙度 Ra( /z m) 電弧產 生次數 (次） Dg 15 10 5 40 30 l〇 實施例1 al 0 0 0 1. 1 1.3 __ A1 a2 - - 一 1.2 1.2 1 實施例 a3 0 0 1 1. 1 ί. 1 一' A2 a4 - - - 1.0 1.2 2 實施例 a5 0 0 3 1.1 1. 1 一 A3 a6 - - - 1.0 1.1 7 比較例 a7 5 8 10 1.1 - 一 A1 a8 - - — 1.2 - 21 *.......D係細微龜裂深度（/zm) L係細微龜裂長度（/i m) 其次，針對本發明第二實施態樣的實施例說明如下。 f施例 將In2〇3粉與Sn〇2粉依In2〇3 : Sn〇2 = 90 : 10質量％的比 進行混合’並依常法製作ITO燒結體而形成靶材。在將此 靶材切成P6吋大小之後，利用平面研磨盤對供施行濺鍍 處理的面（濺鍍面）與進行焊接的面（焊接面）進行雙面^ 磨，俾調整為5mm厚度。其次，對濺鍍面利用不同號數的 鑽石磨具進行研磨’而製得NQ.bUb4。此外，取代對減 鍍面施行鑽石磨具的研磨’改用剛鋁石之 進砂 研磨，而製得靶No.b5。 制其次，將該等革巴焊接於銅製底板上之後，再安裝於手 -的濺鍍裝置上’並依以下條件施行濺鍍處理。 314023D01 24 1310409 D_C磁控減:錢 Ar 3mTorr 03mTorr 1.64W/Cffl: (濺鍍條件）濺鍍方式 處理氣體 處理壓力 氧分壓：[ 投入功率 丄…】”〜出 在此濺錢處理之降，垂· γ &amp; 除電弧計數器係採用#電弧龄调5 (MAMGenesis)(藍德馬克 々#冤弧|視容 且將測量條件設定為：减桓.处曰 譯）產幻 l〇H中輪式.月&quot;置、電弧感測電壓： 而執行電弧感測，在測量截至初 Ms 弧間隔為m灿…收束為止時(截至電 ' y 1上為止）的積分投入功率量，缺 行濺鍍處理直到積分谇安曰&amp; …、後繼續施 且J檟刀才又入功率量為〇.1Wh/ 2 如第2表中所示。 Cm為止。結果 對此雜處理前的乾之濺鍍面的表面粗糖 = _0，)進行測量，結果如第2表中所』 :粗^計：採用，(小坂研究所產製)’依觸針半 估县貝柄度· G.Wsec、截止：G.8随、評 估長度：4mm的條件，進行測量。 314023D01 25 1310409 第2表 樣本 No. ,bl b2 T 密度 (%) ~99ΤΪ~ --—------ 99. 5 密度 (g/cni3) 7. 09 — 7. 12 T濺錄處理前 之表面粗糙 度 Ra( // m) ~ 0. 35 -------- 1. 38 積分投入 功率量 (Wh/cm2)*l ~~~〇ΓοΤόα~ 0.0120 --—· —_____ 0.0073 ~~〇T〇09l~~~ 電弧產Ϊ~~ 1 次數 __(次）*2 261 ---~~-~~__ 1119 ~~^---___. 740 —--—----- 83 b3 b4 99. 1 7. 09 7.10 1.01 — ~---- 0. 79 b5 氺1 · · 量 99. 6 •截至電 7. 13 弧產生丨 ,2.47 ----------- 間隔為1 〇秒 0. 0064, -------- 以上時的積 1052 ------J 分投入功率 *2· ··截至電弧產生間隔為1〇秒以上時的電弧產生次數 實施例B 2 從手製錢鑛裝置上剝除實施例B1中所使用的樣本，並 施彳丁真空包裝且靜置丨天。然後’從真空包裝中取出樣本， 並安裝於上述手製.濺鍍襞置上，依如同實施例M的濺鍍條 件配a貝％例B1的積分投入功率量，施行濺鍍處理直到 ^為5Wh/cm為止。此外’如同實施例μ，進行藏鐘處理 刖之表面粗糙度如的測量。結果如第3表中所示。 26 314023D01 1310409 第3表 濺鍍處理前之 表面粗趟度 _^a( β m)Arc Sensing Voltage: Loov Large-Medium Energy Boundary: 50mJ Hard Arc Minimum Time: 1QM Splitting with a4 Replacement No.al舆a2 ' and Subtle-1 is called "Two::Integral Input Power in Processing Conditions" A1. As a result, the remaining embodiments are as in (4) Example A & ΐ=Γ., 5 and a6 are substituted for N°_al and a2' and the integrated input power in the processing conditions performed by the fine turtle treatment: Beyond /cm2, the rest are... A1. The results are shown in the table. Comparative Example A1_ The other embodiments were as in the examples except that N?.aa2 was replaced with dry 17 and 4, and the fine crack removal treatment was not performed. The results are shown in Table 1. 314023D01 23 1310409 No. 1 target No. Fine crack number (number)* Sputtering (crack removal treatment) Surface roughness Ra (β m) Surface roughness Ra after sputtering (crack removal treatment) /zm) Number of arc generations (times) Dg 15 10 5 40 30 l〇Example 1 al 0 0 0 1. 1 1.3 __ A1 a2 - - 1.2 1.2 1 Example a3 0 0 1 1. 1 ί. 1 ' A2 a4 - - - 1.0 1.2 2 Example a5 0 0 3 1.1 1. 1 A3 a6 - - - 1.0 1.1 7 Comparative example a7 5 8 10 1.1 - A1 a8 - - 1.2 - 21 *.... ...D series fine crack depth (/zm) L series fine crack length (/im) Next, an embodiment of the second embodiment of the present invention will be described below. f Example The In 2 〇 3 powder and the Sn 〇 2 powder were mixed at a ratio of In 2 〇 3 : Sn 〇 2 = 90 : 10% by mass. The ITO sintered body was produced by a usual method to form a target. After the target was cut into a size of P6, the surface to be sputtered (sputtered surface) and the surface to be welded (welded surface) were double-sided polished by a flat grinding disc, and adjusted to a thickness of 5 mm. Next, NQ.bUb4 was obtained by grinding the sputtered surface with a different number of diamond grindstones. Further, instead of performing the grinding of the diamond abrasive article on the deplating surface, the sanding was performed by using a silica stone to obtain the target No. b5. Secondly, after the leather was welded to the copper base plate, it was attached to the hand-spraying apparatus and subjected to sputtering treatment under the following conditions. 314023D01 24 1310409 D_C magnetic control minus: money Ar 3mTorr 03mTorr 1.64W/Cffl: (sputtering conditions) sputtering method treatment gas treatment pressure oxygen partial pressure: [input power 丄...]" ~ out of this splashing treatment,垂 · γ &amp; arc counter is based on #Arc age adjustment 5 (MAMGenesis) (Landmark 々 #冤Arc | visual capacity and the measurement conditions are set to: reduced 桓. 曰 translation) 幻幻 l〇H middle wheel Type. Month &quot;Set, arc sensing voltage: While performing arc sensing, the measured input power amount (before the power 'y1) is measured until the initial Ms arc interval is m... Sputtering treatment until the integral 谇安曰 &amp; ..., and then continue to apply and the J knives only after the amount of power is 〇.1Wh / 2 as shown in the second table. Cm up to the results before the miscellaneous treatment The surface of the sputtered surface is raw sugar = _0,), and the result is as shown in the second table: the thickness of the meter: used, (produced by the small sputum research institute) 'according to the needle pin half-estimated county bellows degree · G.Wsec, cutoff :G.8 With the evaluation length: 4mm, measure. 314023D01 25 1310409 Table 2 sample No., bl b2 T density (%) ~99ΤΪ~ --------- 99. 5 Density (g/cni3) 7. 09 — 7. 12 T Surface roughness before smearing treatment Ra ( // m) ~ 0. 35 --- ----- 1. 38 Integral input power (Wh/cm2)*l ~~~〇ΓοΤόα~ 0.0120 ---· —_____ 0.0073 ~~〇T〇09l~~~ Arc calving ~~ 1 times _ _(次)*2 261 ---~~-~~__ 1119 ~~^---___. 740 —-------- 83 b3 b4 99. 1 7. 09 7.10 1.01 — ~-- -- 0. 79 b5 氺1 · · Quantity 99. 6 • Up to 7.13 arc generation 丨, 2.47 ----------- The interval is 1 〇 seconds 0. 0064, ----- --- The product at the time of 1052 ------J is the input power *2 · · The number of arc generations when the arc generation interval is 1 〇 or more. Example B 2 Stripping from the hand-made mining equipment The sample used in Example B1 was vacuum packed and allowed to stand for a day. Then the sample was taken out from the vacuum package and mounted on the above-mentioned hand-made sputter plate, as in the sputtering condition of Example M. With the integral input power amount of the example B1, the sputtering process was performed until the voltage was 5 Wh/cm. Further, as in the example μ, the measurement of the surface roughness of the sputum was performed. The results are shown in Table 3. 26 314023D01 1310409 Table 3 Surface roughness before sputtering treatment _^a( β m)

1. 35 Οϊ 一 一 2. 48 積分投入 功率量 (Wh/cm2)^l &quot;〇~0004 ~〇009 〇Γ〇005 ^Γ〇0〇91. 35 Οϊ one one 2. 48 integral input power (Wh/cm2)^l &quot;〇~0004 ~〇009 〇Γ〇005 ^Γ〇0〇9

, 0004 。 截至電弧產生間 截至，弧產生間隔為10秒以上時的電弧產生次數· 由第3表得知’有執行賤鐘處理者，在剛濺錢後的電 弧收束上將較快速，電弧次數亦減少，具優越的初瓜、 特性。 、 實施例B3 將實施例B2中所使用的樣本從手製_裝置上剝除 後，再安裝上，並依如同實施例B1的濺鍍條件，配合實施鲁 例B1與實施例B2白々積分投入功率量，施行♦鑛處理直到 變為6Wh/cm2為止。結果，每個靶均未產生電弧間隔低於 10秒的電弧。此外，如同實施例B1，進行濺鍍處理前之表 面粗糙度Ra的測量。結果如第4表中所示。 314023D01 27 )1310409 弟.4表 樣本 No. 濺鍍前積分 投入功率量 (Wh/cm2) T7 b2 5. 0 b3 -：------- 5. 0 b4 5. 0 b5 5. 0 ••截至電弧產生 濺鍍處理前之 表面粗趟度 β m)iToT —--- 1. 74 ~2~23 Y792rji 積分投入 .功率署 CWh/cra2)*l 電弧產生 次數 (次）*2 *1 量 *2 办以上時的積分投入功率 •.截至電弧產生間隔為10 立 上時的電弧產生次數 [產業上可利用性] 本發明之濺鍍靶因為可有效的降日 因此頗適於當作濺鍍與薄膜形成時所用的：電弧的… 【圖式簡單說明】 ' . 1 第1圖係當剖面觀察靶之濺鍍面 細微龜裂例子的說明概略圖。 ^况知，所觀察到 【主要元件符號說明】 1 錢錢面 3 截面 5 細微龜裂 314023D01 28, 0004. As of the arc generation interval, the number of arc generations when the arc generation interval is 10 seconds or more. • It is known from the third table that the person who performs the squall clock processing will have a faster arc after the money has been splashed, and the number of arcs is also high. Reduced, with superior first melon, characteristics. Example B3 The sample used in Example B2 was peeled off from the hand-made device, and then mounted, and the sputtering power of Example B1 was used in accordance with the sputtering conditions of Example B1. Quantitatively, the treatment was carried out until it became 6 Wh/cm2. As a result, no arc was generated for each target with an arc interval of less than 10 seconds. Further, as in the example B1, the measurement of the surface roughness Ra before the sputtering treatment was performed. The results are shown in Table 4. 314023D01 27 )1310409 弟.4表样第. Integral input power before sputtering (Wh/cm2) T7 b2 5. 0 b3 -:------- 5. 0 b4 5. 0 b5 5. 0 • • Surface roughness before the arc is sputtered. β m)iToT —--- 1. 74 ~2~23 Y792rji integral input. Power Unit CWh/cra2)*l Number of arc generations (times)*2 *1 Quantity*2 The integrated input power at the time of the above • The number of arc generations when the arc generation interval is 10 is set up [Industrial Applicability] The sputtering target of the present invention is suitable for use as an effective fall. Sputtering and film formation: arc... [Simplified illustration] '. 1 Fig. 1 is a schematic diagram showing an example of fine cracking of a sputter surface of a cross-sectional observation target. ^Knowledge, observed [Main component symbol description] 1 Money face 3 Section 5 Fine cracks 314023D01 28

Claims (1)

I3104O9L· ；口 十 錄’係經機械研磨步驟而製得的濺錄，為有 ㈣電弧的產生，採用可去除細微龜裂之任一方 法，以進行細微龜裂去除處理，直鉸 的截面時，益法發現深产Η直到田镜察歡之淹鑛面 的細微龜裂為/ _上且長度4°…上 2 ·如申請專利範圍第1項之減鍍乾，其中.，為有效防r 期電弧的產生，採用可去除細微龜裂之任—方法，以= 除處理，直到當觀察乾之賤鑛面的截面 龜裂為，深度1 一上且長度3一以上的細微 I 圍第2項之賤_，其中’當觀⑽之濺 =的截面時’深度一以上且低於…m，而 ==於=的細微龜裂數量，係在截面寬 母2. 5mm在5個以下。 專利範圍第1至3項中任-項之濺鍍靶，其中， 理、面施行精密研磨、_處理、雷射處 细後1喷砂處理中之任一種，以作為前述 、、’田微龜裂之去除處理。 5.=專利範圍第、至3項中任一項之濺…中， 6二2=由„末冶金法所製得㈣所構成的: _你 3項中任一項之濺鍍靶，苴中， =錢她氧化鋼或氧化錫中之至少其中―種為中主 314023D01 29 )1310409 _ 7.如申請專利範圍第1至3項中任一項之濺鍍靶，其中， 該藏鑛革巴之減鐘面的表面粗糙度Ra係1. 0 /z m以上。 30 314023D01 1310409 七、指定代表圖： (一） 本案指定代表圖為：第（1 )圖。 (二) 本代表圖之元件符號簡單說明： 1 減鑛面 3 截面 5 細微龜裂 八、本案若有化學式時，請揭示最能顯示發明特徵的化學式： 本案無化學式。 4 314023Ό01I3104O9L· ; 口十录' is a splatter made by the mechanical grinding step. For the generation of (4) arc, any method that can remove fine cracks is used to perform fine crack removal treatment. , Yifa found that the deep-growing Η until the Tianjingcha Huan's submerged surface of the fine crack is / _ and the length of 4 ° ... on 2 · as claimed in the scope of the first paragraph of the deplating dry, which, for effective prevention The r-phase arc is generated by the method of removing fine cracks, and is treated by = until the cross-section crack of the dry ore surface is observed, and the depth is 1 and the length is 3 or more. 5毫米以下5以下。 The 2 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ . The sputtering target according to any one of the first to third aspects of the patent range, wherein the fine surface is subjected to precision grinding, _treatment, and one of the laser blasting treatments, as the aforementioned, Crack removal treatment. 5.= In the splash range of any of the patent scopes to 3, 6 2 2 = consists of (4) made by the last metallurgical method: _ your sputter target of any of the 3 items, 苴In the middle of the oxidized steel or the tin oxide, at least one of the oxidized steels or the tin oxides is a 314023D01 29) 1310409 _ 7. The sputtering target according to any one of claims 1 to 3, wherein the Tibetan leather The surface roughness Ra of the clock surface of Ba is 1. 0 / zm or more. 30 314023D01 1310409 VII. Designation of representative drawings: (1) The representative figure of the case is: (1). (2) The components of the representative figure Brief description of the symbol: 1 Reduced ore surface 3 Section 5 Fine cracks 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: There is no chemical formula in this case. 4 314023Ό01