TWI293991B - Sputtering target and method of manufacturing same - Google Patents

Description

1293991 _索號911姐迎一一 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於濺鍍及薄膜形成 造方法。 時所 採用的溽鍍靶之製 【先前技術】 法 習知薄膜形成法之一’已知有如減鏟法。所_ 面 一般係指在減壓下，使呈電漿狀態的惰氣撞$機鍵 (以下簡稱「靶」），隨此能量而令從靶中飛出的八濺錄乾 子，附著於基板上而形成薄膜的方法，因尨π L刀子或原 積化並獲得高性能的膜，因此被利用於工業上。 ％ Χ 此外，近年在濺鍍方式方面，已知有如：在 反應性氣 體中施行濺鍍的反應性濺鍍法、在靶背面設置磁石〜性 膜形成高速化的磁控濺鍍法等等。 俾達 薄 在採用此類濺鍍法所形成的薄膜中，特別係以& (I η 2〇 〇或氧化錫（Sn〇2)中至少其中一種為主成分、，化銦 (以下稱「I TO」）膜，因為可見光穿透性較高且導^化物 高，因此被當作透明導電膜並廣泛的使用於液晶翻、—性亦 或玻璃防霧用發熱膜、紅外線反射膜等。 曰曰頌示骏置 供形成此類I TO膜用的靶，如同其他氧化物 原料粉末成形後，利用進行燒結的粉末冶金法 ，在將 成靶材之後，對此靶材採用# 2 〇 〇前後的砂紙進結法）製 磨，並，用其他加工機器施行外形加工而製得。丁平面研 但是，若採用依此方式製得的濺鍍靶，來一 薄膜的話，將產生如下述問題點。 义、高性能 始初期將 換句話說，在施行濺鍍之際，特別在濺鍍1293991 _ 索号 911 sister welcomes one-fifth, invention description (1) Technical Field of the Invention The present invention relates to a method of sputtering and film formation. The ruthenium plating target used in the prior art [Prior Art] One of the conventional film forming methods is known as a reduced shovel method. The _ surface generally means that under the decompression, the inert gas in a plasma state is hit by a machine key (hereinafter referred to as "target"), and the splattered squid flying out from the target is attached to the energy. The method of forming a thin film on a substrate is utilized in the industry because of the 尨 L L knife or the original product and obtaining a high-performance film. In addition, in recent years, in the sputtering method, a reactive sputtering method in which sputtering is performed in a reactive gas, a magnetron sputtering method in which a magnet is formed on the back surface of the target, and a high-speed magnetization sputtering method is formed. In the thin film formed by such a sputtering method, in particular, at least one of & (I η 2〇〇 or tin oxide (Sn〇2) is mainly composed of indium (hereinafter referred to as " Since the film has a high visible light transmittance and a high chemical conductivity, it is widely used as a transparent conductive film and is widely used for a liquid crystal turning, a heat-generating film for glass anti-fogging, an infrared reflecting film, and the like.曰曰颂 骏 置 置 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成The sandpaper in the front and back is made into a grinding method, and is produced by performing other shapes processing by other processing machines. Ding plane research However, if a sputtering target prepared in this manner is used to produce a film, the following problems will occur. Righteousness, high performance, in the beginning, in other words, when sputtering is performed, especially during sputtering.

314023(修正版）· ptc 第8頁 1293991 _案號91121199_衫年 4月日 修正_ 五、發明說明（2) 產生所謂「產生電弧（arc i ng)」的異常放電（以下簡稱為 初期電弧），而將損害到成膜安定性，同時亦將產生粉 粒。而該粉粒將附著並沉積於濺鍍靶上，而形成所謂「結 塊（η 〇 d u 1 e )」的黑色附著物。此附著物乃造成初期電弧的 原因之一，此外亦將誘發出新粉粒的產生。另外，若粉粒 附著於薄膜上的話，薄膜性能便將惡化。 所以，當使用新的濺鍍靶之際，為迴避此類問題點， 即便將新的濺鍍靶設置於濺鍍裝置上，亦需要從剛剛開始 濺鍍之後起，至不會產生電弧而可進行產品製造之間的時 間進行空運轉，導致妨礙生產性的提昇。 習知此類產生電弧或結塊的產生，乃以對靶表面施行 研磨，越平滑越能降低此現象的發生，而對表面施行平面 研磨的表面研磨靶，截至目前為止乃屬主流。譬如藉由將 靶表面粗糙度設定在既定範圍内，而企圖防止產生電弧、 或結塊現象的ITO濺鍍靶，有如日本專利第2 7 5 0483號公 報、第3 1 5 2 1 0 8號公報等中所揭示。 但是，在為達成此類既定表面粗糙度方面上，便有在 製作濺鍍靶之後，利用機械研磨而施行粗研磨俾調整厚 度，然後必須再階段式的施行精研磨（研磨）俾達靶表面的 平滑化，導致製造時間及成本增加的問題發生。此外，即 便具有此種既定表面粗糙度的I TO乾，亦仍無法有效的防 止初期電弧，且將產生從將新的濺鍍靶設置於濺鍍裝置 起，必須耗費比較長時間進行空運轉的問題。 再者，此類問題在利用以I TO以外之其他氧化物、氮314023 (Revised Edition)· ptc Page 8 1393991 _ Case No. 91121199_April Day Correction _ V. Inventive Note (2) An abnormal discharge (hereinafter referred to as an initial arc) is generated (hereinafter referred to as "arc i ng") ), which will damage the film formation stability, and will also produce powder. The particles will adhere to and deposit on the sputtering target to form a black deposit called "n 〇 d u 1 e". This attachment is one of the causes of the initial arc and will also induce the production of new particles. In addition, if the particles adhere to the film, the film properties deteriorate. Therefore, when using a new sputtering target, in order to avoid such problems, even if a new sputtering target is placed on the sputtering device, it is necessary to start from the start of sputtering, and no arc can be generated. The time between product manufacturing is performed in an idle operation, which hinders the improvement of productivity. It is known that such an arc or agglomeration is produced by grinding the surface of the target, and the smoother the lower the phenomenon occurs, the surface grinding target for the surface grinding is the mainstream. For example, an ITO sputtering target that attempts to prevent arcing or agglomeration by setting the target surface roughness within a predetermined range is as disclosed in Japanese Patent No. 2 7 5 0483, No. 3 1 5 2 1 0 8 It is disclosed in the bulletin and the like. However, in order to achieve such a predetermined surface roughness, after the sputtering target is produced, the rough grinding is performed by mechanical grinding to adjust the thickness, and then the fine grinding (grinding) must be performed in a stepwise manner to reach the target surface. Smoothing, resulting in increased manufacturing time and cost issues. In addition, even if the I TO dry has such a predetermined surface roughness, the initial arc cannot be effectively prevented, and it takes a long time to perform the dry operation from the time when the new sputtering target is placed on the sputtering apparatus. problem. Furthermore, such problems are exploiting other oxides, nitrogen other than I TO

314023(修正版）.ptc 第9頁 1293991 修正 案號 91121199 五、發明說明（3) 化物、碳化物、硼化物等為主成分的粉末冶金法 法）’而所製得的陶篆系靶或金屬系靶亦將同樣ς ^。 本發明者有黎於上述狀況，遂經深入鑽研，结果發 在經機械研磨步驟所製造的濺鍍靶，會存在 磨=驟等在無表面出現初期粉粒，或由於熱衝= 而攸表層脫離產生粉粒，這些都是產生電弧與結塊的主要 原因，只要去除它們就可防止初期電弧的產生。° Α 此外，經本發明者的研究結果，發現上述部位是否合 因濺鍍時的熱衝擊而從表層脫離產生粉粒，盥竟說是因ς :^粗縫度所引起’倒不如說要更加歸咎於機械研磨使 乾表面在内部產生細微龜裂& i η _ 饿魏凌而造成。而且發現所有細微龜 表的存在並不是造成產生電弧與結塊的原因，特別是關於 初期電弧，存在既定值以上的深度與長度的細微龜裂才是 ，要的產生原因，藉由實質上消除此種細微龜裂，便可有 效的防止初期電弧的發生，至此遂完成本發明。 故’本發明之目的在於提供一種可防止初期電弧的產 生’並提昇賤鍍的初期穩定性，明顯提昇薄膜形成時的生 產性之濺鍍靶及其製造方法。 【發明内容】 本發明之錢鍍靶係經機械研磨步驟而所製得的濺鍍 乾’在出貨前’便預先對此靶的濺鍍面施行濺鍍處理。 在本發明之濺鍍靶中，對上述濺鍍靶之濺鍍面所施加 的濺鑛處理的積分投入功率量，最好為〇· 〇〇5Wh/cm^上， 尤以〇· 01 Wh/cm奴上為佳，更以〇. 02Wh/cm奴上為更佳。 本發明之藏鍍靶係最好在出貨時在上述濺鍍靶的濺鍍314023 (Revised Edition).ptc Page 9 1393991 Revision No. 91121199 V. Inventions (3) Powder metallurgy method based on compounds, carbides, borides, etc.) The metal target will also be the same. The present inventors have been in the above situation, and after intensive research, the result is that the sputtering target produced by the mechanical grinding step may have a grinding powder or the like in the initial stage without surface, or due to thermal shock = Detachment produces powder particles, which are the main cause of arcing and agglomeration, as long as they are removed to prevent the formation of an initial arc. ° Α In addition, according to the results of the study by the inventors, it was found that the above-mentioned parts were separated from the surface layer by the thermal shock during sputtering to produce powder particles, and it was said that it was caused by 粗 : ^ rough seam degree. This is attributed to the mechanical grinding that causes the dry surface to produce fine cracks & i η _ hungry Wei Ling inside. Moreover, it is found that the existence of all the fine turtles is not the cause of arcing and agglomeration. Especially for the initial arc, there are subtle cracks of depth and length above a predetermined value, which are caused by the substantial elimination. Such fine cracking can effectively prevent the occurrence of an initial arc, and thus the present invention has been completed. Therefore, the object of the present invention is to provide a sputtering target which can prevent the initial arc generation and improve the initial stability of the ruthenium plating, and which can significantly improve the productivity at the time of film formation, and a method for producing the same. SUMMARY OF THE INVENTION The sputter coating of the present invention is subjected to a mechanical polishing step to perform a sputtering process on the sputtered surface of the target prior to shipment. In the sputtering target of the present invention, the integrated input power amount of the sputtering treatment applied to the sputtering surface of the sputtering target is preferably 〇·〇〇5Wh/cm^, especially 〇· 01 Wh/ The cm slave is better, and it is better. 02Wh/cm slave is better. The present invention is preferably used for sputtering of the above-mentioned sputtering target at the time of shipment.

314023(修正版）.ptc 第10頁 1293991314023 (Revised).ptc Page 10 1293991

修正 五、發明說明（4) 面上貼附表面保護膜。 别〜^本發明中’上述濺鍍靶最好係依燒結法進行製作而 製知者。 ^ ^明之濺鑛靶係以氧化銦分，或含有以氧化 銦及氧化錫中5 +甘丄 , 本义其中一者的氧化物（I TO)。 〜ΛΑ * t明之賤鍵乾之製造方法，最好係將依燒結法而獲 得的靶表面谁AU _ S I、成Μ 邊订機械研磨’其次在出貨前便預先對此靶的 至少濺鍍面施行濺鍍處理。 ττη^ ^本么明之賤鑛乾係屬I TO錢鍍靶的情況時，該 之席斜\ /之製造方法’係對以氧化姻與氧化錫為主成分 / +、二乂了繞結而獲得的1 το乾表面施行機械研磨，其次 r ♦二二f先對此1 Τ〇把的至少_鍵面施行錢鑛處理。 L貝施方式】 以下’針對本發明進行具體說明。 由機I! : ί t明之濺鍍靶，帛一態樣與第二態樣均屬於經 由棧械研磨步驟進行製造的。 者便ί句：：明ί發明之濺鍍靶僅要屬於經機械研磨步驟 氮化物、碳化物、蝴化物等為主成分的陶竞 n〇=:構成的靶。此類靶材具體而言，可例舉如 以I η 2〇咸S η 0 2中至少其中一種為φ 或Ζηο中至少其中一種為主成八，成分的（ΙΤ0)、以1η2〇3 、Snf) 7 0 成刀的（ΙΖ0)、Ζη0-Α 1 20 3、Ιη20 3、bn02、ZnO、Al2〇3、Si09、Ta η μ a AIN、ς·Γ u w p 2 ㈣5、MS〇、NiO、Si3N4、 AIN、 SiC、 Mo、 W、 Cr、 Ti、 Zr、 Hf ml 聱夕由 TTn^ ^ ^ Hf、Nb、Ta、A1等。該 等之中’ I T Cb賤鑛乾’因為被要求古 _ 受水有效率的執行濺鍍，且Amendment 5. Inventive Note (4) A surface protective film is attached to the surface. Further, in the present invention, the sputtering target is preferably produced by a sintering method. ^ The Mingzhi splash target is made of indium oxide or contains an oxide (I TO) of one of the original meanings of indium oxide and tin oxide. ~ ΛΑ * t 明之贱 干 dry manufacturing method, it is best to use the target surface obtained by the sintering method AU _ SI, Μ 订 订 订 订 订 订 订 订 订 订The surface is sputtered. Ττη^ ^ When the 干 贱 贱 贱 贱 贱 属 属 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I The obtained 1 το dry surface is subjected to mechanical grinding, and then r ♦ 2 2 f is first subjected to the treatment of the at least _ key surface of the 1 Τ〇. L Besch method] The following is specifically described for the present invention. By the machine I! : ί t the splash target, both the first and second aspects are manufactured by the stack grinding step.便 句 ::: The invention of the splash target is only the mechanical composition of the nitride, carbide, butterfly and other components of the main composition of the Tao Jing n〇 =: the target. Specifically, such a target may be, for example, at least one of φ or Ζηο as at least one of I η 2 〇 S S η 0 2 is mainly composed of eight, a component of (ΙΤ0), a ratio of 1η2〇3, Snf) 7 0 Knife (ΙΖ0), Ζη0-Α 1 20 3, Ιη20 3, bn02, ZnO, Al2〇3, Si09, Ta η μ a AIN, ς·Γ uwp 2 (4) 5, MS〇, NiO, Si3N4 , AIN, SiC, Mo, W, Cr, Ti, Zr, Hf ml by TTn^ ^ ^ Hf, Nb, Ta, A1, and the like. The 'ITCb贱 mine dry' in these is required to be sprayed efficiently by water, and

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IHM 314023(修正版）· ptc 案號 9Π21199 1293991 修正 五、發明說明（5) :高度的初期安定性，θ此本發明之第—態樣 可特別有效適用於此。 $ ~悲樣 再者，製造上述乾材之方法並無特別的限制， 配比率進行混合的原料粉末，或依共沉搬二： k侍均勻混合物的原料粉末，就陶瓷系靶而言浐 :㈣知的各種乾式法或濕式法進行成形&，經燒結：用 再施行機械研磨的燒結法（粉末冶金法）而進行製― 金屬系靶的話，則可在真空熔解後，經鑄造並塑性加=就 後’再經機械研磨的真空溶解法、或H丨P (熱均壓燒、纟士 法、或C I P (冷均壓燒結）法進行成形後，再經燒結、 加工的粉末冶金法。 1 上述乾式法可舉例如CP (冷壓）法、HP (熱壓）法、 Η I P (熱均壓燒結）法等。c P法乃將經混合的原料粉末填充 入成形模中，而製成成形體，並在大氣環境下或氧氣琿产 下進行燒成（燒結）。HP法乃將經混合的原料粉末裝填/ ^ 爐内部的成形模中，一邊進行加熱加壓一邊同時執行成形 與燒結。HIP法則將經混合的原料粉末或預備成形體，在y 橡膠等袋或即便高溫中亦仍將形成被覆體的金屬箔等之中 進行封入脫氣之後，***容器中，通過非活性環境氣體媒 體，一邊施行等向性的加壓一邊施行加熱燒結。 /、 濕式法有如日本發明專利特開平i卜2 8 6 0 〇 2號公報中 所$載的過濾式成形法。此過濾式成形法係為從陶究原料 漿施行減壓排除水分而獲得成形體，而採用由非水溶性材 料所構成的過濾式成形模，在此過濾式成形模中，注入由 經混合過的原料粉末、離子交換水、有機添加劑所構成的IHM 314023 (Revised Edition) · ptc Case No. 9Π21199 1293991 Amendment 5, Invention Description (5): High initial stability, θ The first aspect of the present invention can be particularly effectively applied thereto. $ 悲 样 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , (4) Various dry or wet methods are known for forming & sintering: when a metal-based target is produced by a sintering method (powder metallurgy method) which performs mechanical grinding, it can be cast after vacuum melting. Plastic addition = after the vacuum dissolution method of mechanical grinding, or H丨P (hot pressure compression, gentleman method, or CIP (cold pressure equalization sintering) method, then sintered, processed powder metallurgy The above dry method may, for example, be a CP (cold press) method, an HP (hot press) method, a Η IP (heat equal pressure sintering) method, etc. The c P method fills a mixed raw material powder into a forming mold, The molded body is formed into a molded body and fired (sintered) in an atmosphere or under oxygen gas. The HP method is carried out by simultaneously charging and heating the mixed raw material powder in a forming mold inside the furnace. Forming and sintering. HIP law will be mixed original The powder or the preliminary molded body is sealed in a metal foil such as y rubber or a metal foil which forms a covering even at a high temperature, and then inserted into a container, and isotropically applied through an inert atmosphere gas medium. The heating method is performed while applying pressure. /, The wet method is a filter molding method as described in Japanese Laid-Open Patent Publication No. 2 8 6 0 No. 2, which is a slurry molding method. A vacuum forming material is obtained by decompressing water to obtain a molded body, and a filter forming mold composed of a water-insoluble material is used. In the filter forming mold, the mixed raw material powder, ion-exchanged water, and organic additives are injected. of

314023(修正版）· ptc 第12頁 案號 Θ112119Θ 曰 具内成 成形為 等機械 步驟而 研磨步 等而引 離並形 上而產 結塊而 將產生 對經由 後述的 擊而較 1293991 五、發明說明（6) 襞料，減壓排除漿料中的 經乾燥脫脂後，再進行燒 另外，在上述各方法 原'料而所設定的適當溫度 如上述，使原料在模 材之後，為將此靶材加工 成平滑，而施行平面研磨 鑛乾至少要經由機械研磨 依此方式在經由機械 通常可能存在隨研磨步驟 時的熱衝擊而從表層上脫 錢链之際，將附著於基板 附著、沉積於靶上而將因 弧產生的原因，而可判定 所以，在本發明中， $鍍靶之濺鍍面，施行如 粉粒、或隨濺鍍時的熱衝 效的降低初期電弧。 <本發明之第一態樣> i先’針對本發明第 本發明第—態樣的濺 磨v驟而製作、敗 衣作磯鍍靶之後 ，而貫質的消除細微龜 切削機械研磨因為屬於利 切削，而研磨被加工物的 修正 水分而製作成形體，將 結。 中，燒結溫度最好為配 形並經燒 既定尺寸 研磨。換 製得。 驟而所製 起的初期 成粉粒的 生薄膜缺 產生黑色 新的粉粒 機械研磨 特定處理 容易脫離 結’而 ，或為 句話說 得的乾 粉粒、 部分。 陷，此 附著物 〇 步驟而 ’藉由 的部位 經機械研 後述的處 此成形體 合所使用 製作出靶 將表面形 ，一般濺 表面上， 或隨濺鐘 此粉粒在 外，隨再 ，導致電 所製造的 去除此種 ，便可有 一態樣進行說明。 鍵乾係如上述依常法， 裂或在製造過程中施行 用高速旋轉磨具之磨砂 技術，因此隨與磨砂間 刀刃進行 的接觸應314023 (Revised Edition) · ptc Page 12 Case No. Θ112119Θ The cookware is formed into an equal mechanical step, and the grinding step and the like are separated and shaped to produce agglomerates, which will result in a blow through the latter described. (6) Draining, drying and degreasing in the slurry after decompression, and then baking, and the appropriate temperature set in the above-mentioned respective methods is as described above, so that the raw material is after the molding, The target is processed to be smooth, and the planar grinding ore is applied at least by mechanical grinding in such a manner that adhesion to the substrate is adhered and deposited when the chain is removed from the surface by mechanical impact, which may normally occur with thermal shock during the grinding step. On the target, it is judged by the cause of the arc. Therefore, in the present invention, the sputtering target of the target plating is subjected to, for example, powder particles or thermal cracking at the time of sputtering to lower the initial arc. <First aspect of the present invention> i first 'produced after the sputtering of the first aspect of the present invention, and after the smashing of the target, the fine-grained fine-grain cutting mechanical grinding Because it is a sharp cut, the corrected moisture of the workpiece is ground to form a molded body, and the knot is formed. Preferably, the sintering temperature is matched and fired at a predetermined size. Changed. The initial film formed by the sudden formation of the powder is black. The new powder is mechanically ground. The specific treatment is easy to break off the knot, or in other words, the dry powder and the part. In the process of depositing, the adhering portion is formed by mechanically grinding the shape of the shaped body described later, and the surface of the target is formed, generally on the surface of the splash, or with the splashing of the powder, and then The removal of this by the electrician can be explained in one aspect. The key system is as described above according to the usual method, cracking or the use of a high-speed rotating abrasive sanding technology in the manufacturing process, so the contact with the blade between the matte should be

1293991 _案號91121199_P年（月％日 修正_ 五、發明說明（7) 力，在靶的表面（特別係供濺鍍用的面，以下稱「靶 面」）、及其内部中將產生龜裂。此種龜裂中，可從表面 觀察到的龜裂，雖被認為是研磨損傷或加工缺陷，但是截 至目前為止，並未針對從濺鍍面朝内部方向延伸的細微龜 裂進行任何探討。 該細微龜裂在形狀（深度與長度等）、或數量等的產生 程度雖有所差異，但只要是經由機械研磨步驟將不可避免 其產生，而產生的程度將受機械研磨步驟中所採用的磨具 荷重、速度、磨砂形狀、被加工物材質等的影響。 本發明第一態樣中，便著眼於此細微龜裂，可提供一 種可實質上消除具特定值以上深度與長度的細微龜裂，並 有效防止產生初期電弧的靶。 換句話說，如前述，所有細微龜裂的存在並不是造成 產生初期電弧的原因，而是具特定值以上深度與長度之細 微龜裂的存在，才是造成初期電弧的產生原因。當剖面觀 察乾之錢鑛面的情況時，藉由實質上消除此類特定細微龜 裂，便可有效的防止初期電弧的產生。 具體而言，本發明第一態樣的濺鍍靶係經由機械研磨 步驟而所製得的濺鍍靶，當剖面觀察靶之濺鍍面的情況 時，實質上已消除失深度1 5/z m以上且長度40/z m以上（最 好深度1 〇// m以上且長度30// m以上）的細微龜裂。 此處所謂實質上消除細微龜裂，係指對靶施行細微龜 裂去除處理，直到當剖面觀察靶之濺鍍面的情況時，並未 發現具上述特定值以上深度與長度的細微龜裂。 具體而言，乃意味著當剖面觀察靶濺鍍面之際，在寬1293991 _ Case No. 91121199_P Year (Monthly Revision _ V. Inventive Note (7) Force, a turtle will be produced on the surface of the target (especially for the surface for sputtering, hereinafter referred to as the "target surface") Crack. In this type of crack, the crack that can be observed from the surface is considered to be a grinding damage or a processing defect, but so far, no discussion has been made on the fine crack extending from the sputtering surface toward the inside. Although the degree of occurrence of the shape (depth, length, etc.), or the number of the fine cracks is different, as long as it is inevitably generated through a mechanical grinding step, the degree of occurrence will be adopted in the mechanical grinding step. In the first aspect of the present invention, attention is paid to the fine cracking of the abrasive article, and a microscopic crack can be provided to substantially eliminate the depth and length of a specific value or more. Cracking and effectively preventing the target from generating an initial arc. In other words, as mentioned above, the presence of all fine cracks does not cause the initial arc, but has a specific value or more. The existence of fine cracks in degrees and lengths is the cause of the initial arc. When the profile of the dry money surface is observed, the initial arc can be effectively prevented by substantially eliminating such specific fine cracks. Specifically, the sputtering target of the first aspect of the present invention is a sputtering target prepared by a mechanical polishing step, and substantially eliminates the depth of loss when the sputtering surface of the target is observed in a cross section. A fine crack of 5/zm or more and a length of 40/zm or more (preferably a depth of 1 〇//m or more and a length of 30//m or more). Here, the substantial elimination of fine cracking means that a fine turtle is applied to the target. The crack removal treatment does not find a fine crack with a depth and a length above the above specific value when the cross-section of the target is observed. In particular, it means that when the target is sputtered, In wide

314023(修正版）.ptc 第14頁 1293991 _mt 91121199_β年&月 修正__ 五、發明說明（8) 度方向上，長度2· 5mm範圍内，並未發現到深度1 5/z m以上 且長度40// m以上（最好深度1〇// m以上且長度30/z m以上） 的細微龜裂。此乃即便存在珠度與長度均低於上述值之細 微龜裂的話，在此情況下’該細微龜裂本身將不致形成產 生電弧的原因，而且亦不致隨濺鍍時的熱衝擊而引起切割 傷並產生粉粒產生源的現象。 更具體而言’當剔面觀察上述濺鍍靶之濺鍍面的情況 時’並未發現具上述特定值以上之深度與長度的細微龜 裂，甚至於深度5// m以上並低於10// m、且長度m以上 並低於30// m的細微龜裂數量，在截面的寬度方向上，平 均長度2 · 5mm，最好在5個以下，尤以在3個以丁為佳，更 以在1個以下為更佳。 當然，當剖面觀察靶濺鍍面之情況時，並未發現深度 5# m以上並低於1〇" m，且長度1〇〆m以上並低於3X〇" 細微龜裂，換句話說，上述細微龜裂的數量，最好在截面 的寬度方向上，平均長度2. 5mm為0個。 但是，若龜裂數在5個以下（最好為3個以下，尤以在i 個以下為佳）的話，便可有效的降低初期電弧，而不致對 濺鍍造成阻礙。 具體而言，譬如 子顯微鏡（SEM) 在此，靶濺鍍面的剖面觀察之手段， 採用光學顯微鏡、電子顯微鏡、掃描型電 等的顯微鏡觀察。 但是，&的賤鍍面乃如前述，通常因為經由機械研磨 步驟而具有細微凹凸，而上述細微龜裂的深声與長产將進 行何種的設定便將造成問題。所以，在本說ς書中^相關314023 (revised edition).ptc page 141293991 _mt 91121199_β year & month correction __ five, invention description (8) in the degree direction, length 2 · 5mm range, no depth of more than 1 5 / zm and length Fine cracks of 40//m or more (preferably 1 〇//m or more and 30/zm or more in length). This is because even if there are fine cracks whose bead and length are lower than the above values, in this case, the fine crack itself will not cause arcing, and will not cause cutting with thermal shock during sputtering. Injury and the phenomenon of the source of the powder. More specifically, 'when the face is sputtered to observe the sputtered surface of the sputter target', no fine cracks of depth and length above the above specific value are found, even above 5/m and below 10 / m, and the number of fine cracks of length m or more and less than 30 / / m, in the width direction of the section, the average length of 2 · 5mm, preferably less than 5, especially in 3 is better It is better to be less than one. Of course, when the cross-section of the target sputter surface is observed, the depth is not more than 5# m and less than 1〇" m, and the length is more than 1〇〆m and less than 3X〇" fine crack, in other words 5毫米为0。 The number of the above-mentioned fine cracks, preferably in the width direction of the cross section, the average length of 2. 5mm is 0. However, if the number of cracks is 5 or less (preferably 3 or less, particularly preferably i or less), the initial arc can be effectively reduced without impeding the sputtering. Specifically, as a sub-microscope (SEM), the means for observing the cross-section of the target sputter surface is observed by a microscope such as an optical microscope, an electron microscope, or a scanning type. However, the ruthenium plating surface of & is as described above, and usually has fine irregularities due to the mechanical polishing step, and the setting of the deep cracking and long-term production of the above-mentioned fine cracking will cause a problem. So, in this book, ^ related

314023(修正版）.ptc 第15頁 1293991 修正 案號 91121199 五、發明說明（9) 細微龜裂的深度與長度之定義，便根據第丨圖進行以下說 明0 一在本說明書中，所謂細微龜裂的深度，係如第丨圖 不處在靶厚度方向的截面3中，從存在細微龜裂5之區域 對應的濺鍍面1，與戴面3所形成的稜線最高之山頂起， 到細微龜裂5最深處為止，稱為深度D。 岡所再者甚在本說明書+ ’所謂細微龜裂長度係指如第1 圖所不，截面3之細微龜裂5在水平方向上的最大距離l。 另外，本發明第一態樣的濺鍍靶僅要實質上已將1 定值以上深度與長度之細微龜裂消除的靶的話便可。靶濺 鍍面的表面粗糙度（粗糙度曲線的算數平均粗糙度）Ra(根 據JIS B0 60 1 C 1 994 )進行測量）可在ίο" m以上，亦可 5 // m以上，亦可為2 . 0 // m以上。 · 所以，本發明第一態樣的濺鍍靶，在為如習知所施 般的降低表面粗链度方面’因為乾表面並未必要研 滑，因此便可省略此種研磨步驟，而符作 两十 昇把之生產性。 《化生產步驟，並提 當然亦 再者，此外即便靶的Ra低於1 · 0// m之情況時 仍適合於本發明。 $ 質上 在獲得本發明第一態樣的璣鑛革巴（換句★舌說 ^ 已消除具特定值以上深度與長度之細微龜裂的& 灵 必須進行細微龜裂去除處理，直到並未發現^ 、方面’ 微龜裂為止。 Λ 上述特定細 實質上消除此種細微龜裂的方法（細微龜 理），僅要實質上可消除上述細微龜裂的咭 < 的去除處314023 (Revised Edition).ptc Page 151293991 Amendment No. 91121199 V. Description of invention (9) The definition of the depth and length of the fine crack is described below according to the figure. 0 In this specification, the so-called fine turtle The depth of the crack is, as in the third section, the cross section 3 in the direction of the target thickness, from the sputter surface 1 corresponding to the region where the fine crack 5 exists, and the top of the ridge line formed by the wearing surface 3, to the subtle The depth of the crack 5 is called the depth D. Okamoto is even more in this specification + 'The so-called fine crack length means the maximum distance l in the horizontal direction of the fine crack 5 of the section 3 as shown in Fig. 1. Further, the sputtering target according to the first aspect of the present invention may be a target which has substantially eliminated a fine crack of a depth of a predetermined value or more and a length. The surface roughness of the target sputtering surface (the arithmetic mean roughness of the roughness curve) Ra (measured according to JIS B0 60 1 C 1 994) may be ίο" m or more, or 5 // m or more, or 2 . 0 // m or more. Therefore, in the sputtering target of the first aspect of the present invention, in order to reduce the surface thick chain as is conventionally known, since the dry surface does not need to be slipped, the grinding step can be omitted. Make two twenty liters to make it productive. The production step, and of course the above, is further suitable for the present invention even when the Ra of the target is less than 1.0 m/m.质 在 在 获得 获得 获得 获得 获得 获得 获得 获得 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( 已 已 已 已 已 已 已 已 已 已 已 已It is not found that ^, the aspect 'microcracking. Λ The above specific fine method to substantially eliminate such fine cracking (fine turtle), only to substantially eliminate the above-mentioned fine cracking of the 咭<

314023(修正版）.ptc ° ’便可採用任 1293991 -^^91121199 修止 五、發明說明（10) 何方法。譬如可例舉如對靶 磨磨具荷重或旋轉速度等的錢面，⑯行嚴格控制著研 理、兹$鉍*丨老 + 精毯、研磨、濺鍍處理、雷射處 理、乾式蝕刻處理、喷砂處理 該等之中，就說之夺甚卩、 / 鑛處理、雷射處理、乾式的觀點而言，最好為濺 妒聲：：2細微龜裂之去除處⑨’舉對靶之濺鍍面施行 濺鍍，=的方法為例進行具體的說明。 仃 # J?=貝上述細微龜裂消失的方法（細微龜裂的去除 處：），係當採用賤鍍處理之情況時，對濺鍍方式；ϊ 、商告站、$埋：別的限制’ ▼配合需要進行 ==二，。4'如濺鑛氣體可配合需要在氬等惰性氣I#中 使用乳=，並最好將該等的氣體壓力設定為is ι〇ιητ〇^。 再者，濺鍍之際的積分投入功率量（Wh/cm2)(即， 時所投入之平均靶單位面積的總功率量），最好為〇 i至歲鍍 10Wh/cm2，尤以〇· 5至5Wh/cm範圍為佳。 若積分投入功率量在上述範圍内的話，除實質上 細微龜裂消失之外，就濺鍍靶之製造上所需的時間及:^ 成本等生產性方面而言均較為有利。 產 具體而言，譬如在採用DC磁控濺鍍方式的濺鍍裝置 中’设置經機械研磨步驟而所製得之靶（亦可為接合於广 板上），然後採用上述組成的濺鍍氣體，直到達上&積= 投入功率量為止均施行濺鍍處理，便可獲得本發 、刀〜 樣的錢鑛乾。 您 以 此 所獲得乾在當剖面觀察濺鍍面的情況時，具特定值 上之深度與長度的細微龜裂實質上已消失，若藉由採用314023 (corrected version).ptc ° ' can be used to 1293991 -^^91121199 repair 5, invention description (10) What method. For example, the surface of the target grinding tool load or rotation speed, such as the weight of the target grinding, 16 lines strictly control the research, 铋 铋 * 丨 old + fine blanket, grinding, sputtering, laser processing, dry etching In the case of sand blasting, it is best to say that it is very good, / mine treatment, laser treatment, dry view, splashing sound:: 2 fine crack removal point 9' lifting target The sputtering method is performed by sputtering, and the method of = is specifically described as an example.仃# J?=Bei method for the above-mentioned fine crack disappearance (the removal of fine cracks:), when using bismuth plating, the method of sputtering; ϊ, 商告站, 埋埋: other restrictions ' ▼ Matching needs to be done == two. 4' If the splashing gas can be used in combination with the inert gas I# such as argon, it is preferable to set the gas pressure to is ι〇ιητ〇^. Furthermore, the integrated input power amount (Wh/cm2) at the time of sputtering (that is, the total power amount of the average target unit area to be input at the time) is preferably 〇i to aging for 10Wh/cm2, especially 〇· A range of 5 to 5 Wh/cm is preferred. When the integrated input power amount is within the above range, it is advantageous in terms of productivity required for the production of the sputtering target and productivity such as cost, in addition to the substantial fine cracking. Specifically, for example, in a sputtering device using a DC magnetron sputtering method, a target (which may be bonded to a wide plate) prepared by a mechanical grinding step is disposed, and then a sputtering gas of the above composition is used. Until the upper and & product = the amount of power input, the sputtering process is performed, and the money and dryness of the hair and the knife are obtained. When you obtain the dry surface when the sputter surface is observed in the cross section, the fine crack of the depth and length at a specific value has virtually disappeared.

1293991 五、發明說明（11) ~~~-^~t月汐日~ ，的滅鐘法而形成薄膜的 ^' 之產生，且具優越的初期 ^了有效的防止初期電弧 本發明第—能详 β β 裝置採用二=無的初期電弧特性係譬如 (公司名，音譯）產製），並使 ^ k馬克科技公司 執行薄膜形成之際，即可藉對二I 丁 =上述處理的靶而 :^h/Cm %累積電弧“而^二?時的：分投入功 樣的減鑛乾係對此種積分投入功率發明第-態 父，且初期電弧特性較佳。 累積電弧次數較 <本發明之第二態樣> 其次’針對本發明之第二能 本發明第二態樣的丄以：二 在從濺鐘㈣商出貨前，便 機械研磨後， 理。 凡了，賤鍍面施行濺鍍處 如前述，初期電弧的原因，可切 磨步驟而所制/曰说城* j w為乃因在經由機械研 雄少驟而所製得濺鍍靶之濺鍍面 酵沾勒忠般& Α 〇 存在粉粒、或隨濺鍍 呀的熱衝擊而較容易脫離的部位。 所以，若可藉由預先對濺鍍靶之璐線二丄Α # ^二时， ^ ^ < 濺鍍面本身施行濺鍍 處理，而將此種微粉或隨濺鍍時的埶衝 Μ ΛΑ Μ , …野擎而較容易產生脫 離的部位，從濺鍍面上予以去除的話 、 期電弧。 的居，便可有效的降低初 另外， 衝擊而產生 靶表面至内 態樣之特定 即便在此情 脫離，可認 部產生的細 值以上深度 況下，上述 為將依存於 微龜裂，特 與長度的細 濺鍵時的熱 械研磨而從 本發明第一 部位是否隨 存在有隨機 別係具有如 微龜裂。1293991 V. Invention description (11) ~~~-^~t month ~~, the formation of the film ^', and the superior initial ^ effective to prevent the initial arc of the present invention - The β β device adopts the initial arc characteristic of the second = no system (such as the company name, transliteration), and enables the company to perform the film formation, and then the target of the above treatment can be used. :^h/Cm % Accumulated arc "When ^2?: The demining system of the input power is the first state of the invention, and the initial arc characteristics are better. The cumulative arc times are more than < The second aspect of the present invention is as follows: Secondly, the second aspect of the present invention which can be used in the second aspect of the present invention is: after the mechanical polishing is performed before the shipment from the splashing clock (four), it is reasonable. The sputtering surface of the plating surface is as described above, and the reason for the initial arc can be made by the cutting step, and the steel is coated with the sputtered surface of the sputtering target. Le Zhong-like & Α 〇 There is a powder, or a part that is easily separated from the thermal shock of the splash. By pre-sputtering the sputtering target ^2丄Α, ^ ^ < the sputtering surface itself is sputtered, and the micro-powder or the sputtering 溅 溅 Μ If the part that is more likely to be detached from the splatter is removed from the sputtered surface, the arc can effectively reduce the initial and other impacts, and the specific surface of the target surface can be removed even if it is detached. In the case of a depth value higher than the fine value generated by the recognition unit, the above-mentioned is a thermogravimetric polishing which is dependent on the micro-cracking and the fine-split key of the length, and whether or not there is a random turtle such as a micro-turtle from the first part of the present invention. crack.

314023(修正版）· ptc 第18頁 911211¾¾ 1293991 修正 五、發明說明（12) 所以’在本發明第二態樣中，亦最好藉由對濺鍍靶的 濺鍍面預先施行濺鍍，而如本發明第一態樣，形成將具特 定值以上之珠度與長度的細微龜裂，實質的予以消除的 靶。但是，當並未要求至此種性能之情況時，則並未必限 定於此。 換句話說，在本發明第二態樣中，預先施加於濺鍍靶 之濺鍍面上的濺鍍處理用積分投入功率量，最好在 0. 0 0 5Wh/cm^ 上，尤以在 〇 〇1Wh/cm^ 上為佳， 〇2Wh/ci^上為更佳，特別以在〇^上為二。2 ; =量i:/Cm2)係指對出貨前的乾之濺鑛 量。 慝理其平均單位面積所投入的積分功率 若上述積分 施行該濺鍍處理的把^量在〇.〇〇5Wh/Cm^上的話，預先 可有效的防止初期Ϊ =期電孤特性上將較佳，且因為 面實質上便不需要進一 2產生，因此在濺鍍靶的使用者方 進行薄膜成形用的海:，運轉，彳直接採用該機鍍馬上 並有效率的執行薄理，而提昇薄膜形成的生產性， 再者，預先執行勝& 制，若在通常的條；a處理的濺鍍條件並無特別的限 分投入功率量為止卜，施行上述濺鍍處理直到達上述積 再者，本發明；：，可。 、 弧特性係當採用p 6吋靶進行濺鍍處314023 (Revised Edition) · ptc Page 18 9112113⁄43⁄4 1293991 Amendment 5, Invention Description (12) Therefore, in the second aspect of the present invention, it is also preferable to perform sputtering on the sputtering surface of the sputtering target in advance. According to the first aspect of the present invention, a target which is finely cracked with a specific value or more and a substantial degree of cracking is formed. However, when such performance is not required, it is not necessarily limited to this. In other words, in the second aspect of the present invention, the integral input power amount for the sputtering treatment previously applied to the sputtering surface of the sputtering target is preferably at 0. 0 0 5Wh/cm^, especially 〇〇1Wh/cm^ is better, 〇2Wh/ci^ is better, especially for 〇^. 2 ; = quantity i: /Cm2) means the amount of dry splash before shipment. If the integral power of the average unit area is calculated, if the above-mentioned integration is performed on the 〇.〇〇5Wh/Cm^, it can effectively prevent the initial Ϊ = period electric soli characteristics. Preferably, since the surface does not need to be generated in a second, the user of the sputtering target performs the sea for film forming: operation, and the plating is directly performed by the machine and the thinning is performed efficiently. The productivity of film formation, in addition, the pre-execution of the win & system, if the sputtering condition of the normal strip; a treatment is not particularly limited to the amount of power input, the above-mentioned sputtering process is performed until the above product is reached. The present invention;:, can. , arc characteristics when using p 6 吋 target for sputtering

314〇23(修正版）.Ptc 第19頁 並無特別的限制，:您樣中，積分投入功率量的上限值 產性觀點而言，通常，鍍靶製造上所需時間、成本面等生 上述靶之初期電取好在10Wh/Cm奴下。 1293991 _ 案號91121199_办年 b月—修正 五、發明說明（13) · ~ _ ^ 理之情況時，可利用直到電弧產生間隔為丨〇秒以上為止所 投入的積分投入功率量（Wh/cm2)進行評估。具體而言，當 執行賤鍍處理時，測量裝置乃採用電弧計數器（藍德馬克$ 科技公司（公司名，音譯）產製）感測出電弧，並利用截至 P 6忖乾的初期電弧收束為止（即，電弧與次一個電弧間的 產生間隔達1 〇秒以上為止）的積分投入功率量進行評估。 此積分投入功率量的值越小的話，且電弧產生次數越少的 話’靶之初期電弧特性可謂將越佳。 再者，在本發明第二態樣中，為對靶之濺鍍面預先施 行賤鍍處理，通常將本發明第二態樣之濺鍍靶的表面粗糙 度R a設定為大於剛完成機械研磨後的初始值。所以，本發 明第二態樣之濺鍍靶的R a亦可設定為大於習知較佳的〇. 5 # m。此外，即便靶之Ra在〇. 5// m以下的情況下，當然亦 可適用於本發明第二實施態樣。 再者，本說明書中所謂的表面粗糙度Ra係指根據J I S B 0 6 0 1 ( 1 9 9 4年）而所測得粗糙度曲線的算數平均粗糙度。 更具體而言，本發明第二態樣之濺鍍靶的Ra值係若繼 續濺鍍的話，便將無關於初期值而將收束於大致一定值， 就濺鍍處理的生產性觀點而言，濺鍍靶的Ra值可設定在0 · 1至5· 0# m範圍内，亦可設定在〇· 1至3· 0// m範圍内。 再者，本發明第二態樣的藏鐘把係對濺鍍面施行濺;鍍 處理之後，最好馬上在賤鑛面上貼附表面保護薄膜。若將 此保護薄膜貼附於藏鍵面上的話，便可防止雜質附著、氣 體吸附於濺鍍面上。 上述表面保護薄膜乃為防止雜質附著、氣體吸附於濺 1293991314〇23 (Revised Edition). Ptc No. 19 on page 19: In your sample, the upper limit of the amount of integrated input power is usually the time required for the manufacture of the target, the cost, etc. The initial electricity of the above target is taken at 10Wh/cm. 1293991 _ Case No. 91121199_Announcement of the Year of the Year - Amendment 5, Invention Description (13) · ~ _ ^ In the case of the case, the amount of integrated input power that is input until the arc generation interval is more than leap seconds (Wh/ Cm2) for evaluation. Specifically, when the ruthenium plating process is performed, the measuring device senses the arc using an arc counter (manufactured by Randmark® Technology Co., Ltd.), and uses the initial arc converging up to P6. The integrated input power amount up to the point where the interval between the arc and the next arc is equal to or greater than 1 sec. is evaluated. The smaller the value of the integrated input power amount, and the smaller the number of arc generations, the better the initial arc characteristics of the target. Furthermore, in the second aspect of the present invention, in order to perform a ruthenium plating treatment on the sputtering surface of the target, the surface roughness Ra of the sputtering target of the second aspect of the present invention is generally set to be larger than that of the mechanical polishing. After the initial value. Therefore, the Ra of the sputtering target of the second aspect of the present invention can also be set to be larger than the conventionally preferred 〇. 5 # m. Further, even in the case where the Ra of the target is 5% or less, it is of course also applicable to the second embodiment of the present invention. In addition, the surface roughness Ra in this specification means the arithmetic mean roughness of the roughness curve measured by J I S B 0 6 0 1 (199.4). More specifically, if the Ra value of the sputtering target according to the second aspect of the present invention is continued to be sputtered, it will be converged to a substantially constant value regardless of the initial value, from the viewpoint of productivity of the sputtering treatment. The Ra value of the sputtering target can be set in the range of 0 · 1 to 5 · 0 # m, and can also be set in the range of 〇 · 1 to 3 · 0 / / m. Further, in the second aspect of the present invention, the bell is sprayed on the sputtered surface; after the plating treatment, it is preferable to immediately attach the surface protective film to the tantalum surface. If the protective film is attached to the surface of the storage surface, impurities can be prevented from adhering and the gas can be adsorbed on the sputtering surface. The above surface protection film is for preventing adhesion of impurities and gas adsorption to the splash 1293991

^至少貼附於濺鍍面 表面保護薄膜的貼附方 ’亦可乾整體 五、發明說明 錢面上， 均貼附。 薄膜密貼 整體施行 靶之間較 薄膜的樹 於靶面上 其次 說明。 本發 利用燒結 前，預先 再者 情況時， 錫為主成 施行機械 錢面施行 本發 濺鑛面施 造方法。 -^^91121199 (14) 真空包裝的方法。ί中亦=樹脂製薄膜將無 難殘留氣泡，®此屬較:匕褒乃因為薄膜與 脂製薄膜並無特別的限：，;θ θ 2用為表面保護 ’因此最好採用未含脫為防止粉粒轉印 ，針對本發明g r:離性私粒的樹脂製薄膜。 悲樣之濺鍍靶的製造方法進行 明第二態樣之濺鍍靶的 法所製得靶）的矣；a 1 去，係對靶（最好 對tl· L A 、表面^行機械研磨，直次在屮皆 ，者本發二2賤鍍面施行濺鑛處理厂 、 田本發明弟二態樣之 该ϊ Τ 0賤鍍乾的製生、 ；I Τ 0濺錢無的 分的原料，進行婷纟士法，乃對以氧化銦與氧化 研磨，然後在出=二处理而所獲得的1 το把表面 濺鍍處理。 貝别’便預先對減鍍乾的至少滅 J二Ϊ k的錢鍍乾之製造方法，除對藏鍵把的 订/、、x处理之外’其餘均可使用一般濺鍍靶的製^ At least the attached side of the protective film on the sputter surface can be dried as a whole. 5. Description of the invention On the surface of the money, it is attached. The film is adhered to the whole process. The thinner tree between the targets is on the target surface. In the case of pre-sintering, in the case of pre-sintering, tin is mainly used as a mechanical surface for the implementation of the splashing surface. -^^91121199 (14) Vacuum packaging method. ί中也=Resin film will be free of residual bubbles, this is more than: 匕褒 is because there is no special limit for film and grease film:; θ θ 2 is used for surface protection 'so it is better to use To prevent the transfer of the powder particles, the present invention relates to a resin film made of exfoliating granules. The method of manufacturing a sad sputtering target is to perform the target of the sputtering target of the second aspect; a 1 to remove the target (preferably to tl· LA, surface mechanical grinding, Straight in the 屮, the hair of the 2nd 贱 贱 施 施 施 施 施 施 溅 溅 溅 溅 溅 溅 溅 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱 贱For the Ting gentleman method, the surface is sputtered with 1 το obtained by indium oxide and oxidized grinding, and then treated in the second=2. Bebe' pre-deposited at least J Ϊ k The manufacturing method of the money plating dry, except for the ordering of the Tibetan key, the processing of the general sputtering target can be used.

饮勺話說，如上沭，銥丄 、J 空溶解法等，使原料ΐ模結法(粉末冶”久 為使表面带#玉沐為將此靶材加工成形為既定尺寸， 通常在機械研磨之後，二Γ面研磨等機械研磨。此 _____^便4接於底板上而形成濺鍍靶cDrinking spoons, as described above, 铱丄, J empty dissolution method, etc., so that the raw material ΐ mold method (powder smelting) for a long time to make the surface belt #玉 Mu for the target processing into a given size, usually after mechanical grinding Mechanical grinding such as two-face grinding. This _____^4 is connected to the bottom plate to form a sputtering target c.

1293991 月 修正 五、發明說明（15) 磨 研磨，一般配合需要而適當的採取平面研 磨之等方法’在施行為上述成形加工的研 面形成平二” ：b而對表面施行粗研磨，然後為使表 面心成千，月，而階段性的使用細粒磨砂，而施 (，下亦稱「研磨」），或施行以玻璃珠、銘珠、錯= :了砂而所進行的研磨(以下，合併精研磨稱之為 ^發明第二態樣的濺鍍靶之製造方法，在如上述對靶 表面施行機械研磨後，於出貨前便預先對此靶的至少濺铲 面再施行濺鍍處理，而製造出濺鍍靶。此濺鍍處理可在= 研磨後實施，亦可在精研磨後、噴砂的研磨後、 底板後才實施。 、 藉由此種至少對無之濺鍵面施行濺鍍處理，便可將隨 研磨所產生的毛邊或研磨粉末、或隨濺鍍時的熱衝擊而較 容易脫離的處所予以去除，結果便可有效的降低初期電 弧。 / 所以，依照本發明第二態樣的話，即便未對表面施行 鏡面狀平滑的研磨，且即便未施行為抑制表面粗糙度而利 用粒度較細的喷砂處理，亦可獲得降低初期電弧且可有效 施行濺鍍處理的靶。換句話說，當採用本發明第二態樣的 靶之情況時，可省略研磨步驟，藉由對靶之濺鍍面施行濺 鍍處理，便可形成濺鍍靶。 【發明效果】 依照第一態樣的話，可 生細微龜裂的電弧產生， 產 有效的降低源自機械研磨時所 特別對降低初期電弧更為有1293991 Rev. 5, invention description (15) Grinding and grinding, generally adopting the method of plane grinding, etc., to form the flat surface of the above-mentioned forming process: b and rough grinding the surface, then Make the surface of the heart thousands, month, and stage the use of fine-grained matte, and apply (hereinafter also referred to as "grinding"), or perform grinding with glass beads, pearl beads, and wrong sand: The method of manufacturing the sputtering target, which is referred to as the second aspect of the invention, is subjected to mechanical polishing of the target surface as described above, and then at least the sputter surface of the target is previously sputtered before shipment. The sputtering target is produced by the treatment. The sputtering treatment can be carried out after the grinding, or after the fine grinding, after the sandblasting, and after the bottom plate, by using at least the splash surface. By sputtering, it is possible to remove the burrs or abrasive powder generated by the polishing or the spaces which are easily separated by thermal shock during sputtering, and as a result, the initial arc can be effectively reduced. Two-state Even if the surface is not subjected to mirror-like smooth polishing, and the blasting treatment with a fine particle size is performed without suppressing the surface roughness, a target which can reduce the initial arc and can effectively perform the sputtering treatment can be obtained. When the target of the second aspect of the present invention is used, the polishing step can be omitted, and the sputtering target can be formed by performing a sputtering treatment on the sputtering surface of the target. [Effect of the Invention] According to the first aspect It can produce fine cracked arcs, and the effective reduction of production is derived from the mechanical polishing, especially to reduce the initial arc.

314023(修正版）_ ptc 第22頁 案號 91121199 1293991314023 (Revised Edition)_ ptc Page 22 Case No. 91121199 1293991

修正 五、發明說明（16) 效’可明顯的提昇初期穩定性。 驟1此可簡化生產步驟，而提昇省略研磨步 再者，依照本發明之第二離 初期電弧的初期穩定性較高:二龢的話，可獲得有效降低 施行濺鍍處理，便可有效率/曰1靶。藉由採用此濺鍍靶 膜。此外，因為可省略研磨牛生產性並形成咼性能的薄 並達低成本化的功效。 乂 ” ’因此亦可簡化研磨步驟 私=下，根據實施例針對本發明、鱼^ 毛月並不僅限於該等實施例。 進行更詳細說明❺惟本 百先本發明第—實施態樣的 卜 只例及比較例敘述如 列 A1 &lt;靶之製造&gt; 實施例A 1 $ q u , 式所制撂 至3及比較例A 1中所採用沾^ 巧所衣传。 休用的靶，乃依如下方 一將In2〇粉與Sn〇粉 行混合’並發A 23 8^0 2=90: 曾吾。/ 相對穷声ί常法製作1T0燒結體而形成釙j 的比進 相對始度為99.7%。 彬成靶材。此靶材的 將此乾材 a 平面研磨韃上广:)01· 6随切成8片，並將該等安置於— 接的面（焊接面^後再利用#170的鑽石磨具對濺鍍面^二 至a8。 ）進仃雙面研磨，而獲得厚度6mm的靶队、于 A1、 &lt;細微龜裂去除處理&gt;Amendment 5. Inventive Note (16) Effect can significantly improve initial stability. In the first step, the production step can be simplified, and the polishing step is omitted. Further, the initial stability of the second off-arc arc according to the present invention is high: if the sum is second, the sputtering process can be effectively reduced, and the efficiency can be improved.曰 1 target. By using this sputtering target film. In addition, since it is possible to omit the productivity of grinding cattle and to form a thinness of the performance of the crucible and to achieve a low cost.因此" 'Therefore, it is also possible to simplify the grinding step. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The examples and comparative examples are as described in the column A1 &lt;Production of the target&gt; Example A 1 $ qu , the formula made to 3 and the comparative example A 1 used in the dyeing method. For example, the following is a mixture of In2 powder and Sn powder. Concurrent A 23 8^0 2=90: Zengwu. / Relatively poor ί conventional method for making 1T0 sintered body to form 钋j ratio relative initiality is 99.7 %. Bin into the target. This target of the dry material a plane grinding 鞑 wide:) 01·6 with 8 pieces, and placed in the joint surface (welding surface ^ then use # 170 diamond grinding tools on the sputtered surface ^2 to a8.) Double-sided grinding, to obtain a target team with a thickness of 6mm, in A1, &lt;fine crack removal treatment>

314023(修正版）ptc 第23頁 1293991 修正 _91121199 五、發明說明（17) .將上述製造例A1所獲得的靶Ν0·&amp;1&amp; a2,分別焊接於 銅製底板之後，再安裝於濺鍍裝置（Εχ_3〇13Μ，真空器械 工業公司產製）上，然後依下述條件施行為去除細微龜裂 用的濺鍍處理。 (錢鑛條件）濺鍍方式：DC磁控濺鍍 處理氣體：A r 處理壓力：3mTorr 氧分壓· O.OZniTor'r 投入功率：3W/cm2 積分投入功率量：l〇Wh/cm2 對此錢錢處理前後的把N 〇 · a 1及a 2之錢鍵面的表面粗 糙度，根據JISB 0 6 0 1 ( 1 9 94 )且表面粗縫度計採用 SE 1 70 0 C小坂研究所產製），依觸針半徑：m、饋送速 度：0_5mm/sec、截止：λ c 0.8mm、評估長度：的心、 件，進行測量。結果如第1表所示。 &lt;革巴之截面觀察&gt; 採用研磨盤（岡本工作機械公司產製），利用β 2 0 5111111 X厚度1 mm的鑽石# 1 8 0切斷刀，對經施行過上述濺被嚴 的把No.al’朝厚度方向進行切斷。 其次，採用研磨盤（岡本工作機械公司產製）’利用 “ +77割面 205mmx厚度10mm的#60 0鑽石輪，對上述把No·3:的7 進行研磨。 # 其次，採用單面研光機（速彼得發姆公司（公司名’二 〇 1的切 譯）產製），使用GC# 1 0 0 0的游離磨砂，對上述靶N〇· ai314023 (Revised Edition) ptc Page 23 1393991 Revision _91121199 V. Invention Description (17) The target Ν0·&amp;1&amp; a2 obtained in the above manufacturing example A1 is respectively soldered to a copper base plate and then mounted on the sputtering plate. The apparatus (Εχ_3〇13Μ, manufactured by Vacuum Instruments Industrial Co., Ltd.) was used to remove the sputtering treatment for fine cracking according to the following conditions. (money ore condition) sputtering method: DC magnetron sputtering treatment gas: A r treatment pressure: 3mTorr oxygen partial pressure · O.OZniTor'r input power: 3W/cm2 integral input power: l〇Wh/cm2 The surface roughness of the surface of the money of N 〇· a 1 and a 2 before and after the processing of money and money is based on JISB 0 6 0 1 (1 9 94) and the surface roughness test is made by SE 1 70 0 C. Measured according to the stylus radius: m, feed speed: 0_5mm/sec, cutoff: λ c 0.8mm, evaluation length: heart, piece. The results are shown in Table 1. &lt;Cross-section observation of Geba&gt; Using a grinding disc (manufactured by Okamoto Machine Co., Ltd.), the cutter was cut by a diamond #1 0 0 with a thickness of 1 mm of β 2 0 5111111 X, and the above-mentioned splash was strictly applied. No.al' is cut in the thickness direction. Next, using a grinding disc (manufactured by Okamoto Machine Co., Ltd.), the No. 3: 7 was polished by the #60 0 diamond wheel of 205 mm x 10 mm thickness with a +77 cut surface. # Next, single-sided grinding Machine (speed Peterfam company (company name "two 〇 1 translation" production), using GC# 1 0 0 0 free scrub, the above target N〇· ai

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月 五、發明說明（18) 其次，採用單面研光機（速彼得發姆公司（公司名 立 譯）產製）’使用平均粒徑〇 · 1 # m的鑽石磨砂，斜μ 曰 N 〇 · a 1的切剖面進行拋光處理。 ％ 對上述乾No. a 1的切剖面使用光學顯微鏡[奥 學公司（公司名，音譯）產製，Βχ5〇一33p(附落射 ，光 行觀察。結果如第i表中所示。 、罝）]進 &lt;初期電弧特性之評估&gt; 除處： = 濺鑛處理來作為細微龜裂去 工業公司產製X：，鑛裝置（ΕΧ_3013Μ，真空器械 科技公司（公司名，音 皿視态（MAM Genesis)(藍德馬克 的電弧。此時的濺鍍^牛)）進行感測該減鑛時所發生 果如第1表中所示。’、 /、電弧感測條件係如下所述。結 (濺鍍條件 (Μ電弧監視 璣鍍方式 處理氣體 處理壓力 1)0¾控錢鍍 Ar ^ 3mTorr ^ 分壓：0.02mT〇rr 投入功率：3W/Cm2 積分扭 器感測仪又入功率量：5wh/cm2 &quot; '条件）感測模式：能量Month 5, invention description (18) Secondly, using a single-sided polishing machine (speeded by Peter Pem (company name)), using diamond grinding with an average particle size of 〇·1 # m, oblique μ 曰N 〇 · The cut section of a 1 is polished. % The cut profile of the above dry No. a 1 was produced using an optical microscope [Austrian Co., Ltd. (company name, transliteration), Βχ5〇-33p (attached to the spotlight, light observation). The results are shown in the table i. )]Into &lt;Evaluation of Initial Arc Characteristics&gt; Division: = Splashing treatment as a fine crack to go to the industrial company to produce X:, mining equipment (ΕΧ_3013Μ, vacuum equipment technology company (company name, sound dish visual state ( MAM Genesis) (Spark of Randmark. Sputtering at this time)) The results of sensing the reduction are shown in Table 1. ', /, arc sensing conditions are as follows. Junction (sputtering condition (ΜArc monitoring 玑 plating method processing gas processing pressure 1) 03⁄4 control money plating Ar ^ 3mTorr ^ Partial pressure: 0.02mT 〇rr Input power: 3W/Cm2 Integral torque sensor and power input amount: 5wh/cm2 &quot; 'conditions' sensing mode: energy

±JkMk2 硬電弧最低時間：1 00// S±JkMk2 Hard arc minimum time: 1 00// S

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電弧感測電壓：100V 大-中能量邊界：50mJ 案號 91121199Arc sensing voltage: 100V large-medium energy boundary: 50mJ Case number 91121199

1293991 五、發明說明（19) 除用靶No· a3與a4取代粑N〇· al與a2，並將細微龜裂去 除處理所執行之濺鍍處理條件中的積分投入功率量從 1 OWh/οιηϊ文為6Wh/cm之外，其餘κ ^也方式均如同實施例 Α1。結果如第1表中所示。 豈施例A3 除用靶No· a5與a6取代Ν〇· al與a2，並將細微龜裂去除 處理所執行之濺鍍處理條件中的積分投入功率量從 牙、 1 0 W h / c m饮為3 W h / c m之外，其餘貫施方式均如同實施 A1。結果如第1表中所示。 、 _比較例A1 且並未執行細微龜 實施例A1。結果如 除用靶No· a7與a8取代No· a 1與a2， 裂去除處理之外，其餘實施方式均如同 第1表中所示。 第1表1293991 V. INSTRUCTIONS (19) In addition to replacing 粑N〇· al and a2 with target No. a3 and a4, the integrated input power in the sputtering treatment conditions performed by the fine crack removal treatment is from 1 OWh/οιηϊ The text is 6Wh/cm, and the other κ^ modes are the same as the embodiment Α1. The results are shown in Table 1. Example A3 In addition to the target No. a5 and a6, Ν〇· al and a2 are replaced, and the integrated input power in the sputtering treatment conditions performed by the fine crack removal treatment is from the tooth, 1 0 W h / cm Except for 3 W h / cm, the remaining modes are as implemented A1. The results are shown in Table 1. , Comparative Example A1, and the fine turtle Example A1 was not executed. As a result, the other embodiments were as shown in Table 1, except that the targets No. a7 and a8 were substituted for No. a 1 and a2, and the split removal treatment was carried out. Table 1

No. 細微龜裂數(個)*^ 濺錢(龜 裂去除 處理)前 的表面 粗糙度 Ra( μ, m) 錢鏡(龜 裂去除 處理)後 的表面 粗糙度 Ra( μ m) 電弧產 生次數 (次） D^15 D^IO —^ 0^5 L^40 L^30 L^IO 實施例 A1 _ al 0 0 0 1.1 1.3 - a2 轉 晒 1.2 1.2 1 實施例 _ a3 0 0 1 1.1 1.1 - A2 a4 - 一 - 1.0 1.2 2 實施例 _ a5 0 0 3 1.1 1.1 - A3 a6 - • 一 1.0 1.1 7 比較例 ^ a7 5 8 10 1.1 - - A1 Γ a8 - - - 1.2 - 21No. The number of fine cracks (number)*^ Surface roughness Ra (μ, m) before splashing (crack removal treatment) Surface roughness Ra (μ m) after the money mirror (crack removal treatment) Arc generation Number of times (times) D^15 D^IO —^ 0^5 L^40 L^30 L^IO Example A1 _ al 0 0 0 1.1 1.3 - a2 Transfer 1.2 1.2 1 Example _ a3 0 0 1 1.1 1.1 - A2 a4 - one - 1.0 1.2 2 Example _ a5 0 0 3 1.1 1.1 - A3 a6 - • a 1.0 1.1 7 Comparative example ^ a7 5 8 10 1.1 - - A1 Γ a8 - - - 1.2 - 21

314023(修正版）.ptc 第26頁 1293991314023 (Revised).ptc Page 26 1293991

mi 911211flQMi 911211flQ

π年士月Y 曰 五、發明說明（20) *…….D係細微龜裂深度U m) L係細微龜裂長度（// m) 其次，針對本發明第二實施態樣 實施例B 1 他例呪 明如下 =In2〇 粉與 Sn0 粉依 In2〇3: Sn〇2=9〇: 行混合，並依常法製作IT〇燒結體而形成0貝的比進 材切成“吋大小之後，利用平面研磨 施=二 理的面（濺鍍面）與進行 /、知仃濺鍍處 俾調整為5_度Λ?接:二=行雙面研磨， 磨具進行研磨，而製VV面:：不同號數的鑽石 1侍No. bl至b4。此外，取代對濺鍍面 也订、’磨具的研磨，改用剛鋁石之投射材進行喷砂研 磨，而製得靶No.b5。 逆仃噴/崎 其-人’將該等靶焊接於銅製底板上之後，再安裝於手 製的錢鑛裝置上，並依以下條件施行濺鍍處理。 G賤鍵條件）濺鍍方式：DC磁控濺鍍 處理氣體：Ar 處理壓力：3mTorr 氧分壓：0.03mTorr 投入功率：1. 64W/cm2 在此錢錢處理之際，電弧計數器係採用//電弧監視器 y AM Genes is)(藍德馬克科技公司（公司名，音譯）產 製），且將測量條件設定為：感測模式：能量、電弧感測 電壓· 100V、大—中能量邊界：5〇mj、硬電弧最低時間： 1 0 0// s ’而執行電弧感測，在測量截至初期電弧收束為止 時（截至電弧間隔為丨〇秒以上為止）的積分投入功率量，然π年士月 曰五, invention description (20) *.......D series fine crack depth U m) L series fine crack length (/ / m) Next, for the second embodiment of the present invention 1 He exemplified the following = In2 〇 powder and Sn0 powder according to In2 〇 3: Sn 〇 2 = 9 〇: line mixing, and according to the usual method of making IT 〇 sintered body to form 0 shells than the input material cut into "吋 size After that, the surface is polished by a flat surface (sputtering surface) and the surface of the sputtering is adjusted to 5 degrees. 二: 2 = row double-side grinding, grinding tool grinding, and VV Face::Different number of diamonds 1 wait No. bl to b4. In addition, instead of the sputtered surface, the 'grinding tool' is ground and the raw material of the alumina is used for sandblasting to obtain the target No. .b5. Reverse squirting / Saki-man's welding of these targets on a copper base plate, and then mounting them on a hand-made money mining device, and performing sputtering treatment under the following conditions: G贱 bond condition) sputtering method : DC magnetron sputtering process gas: Ar Processing pressure: 3mTorr Oxygen partial pressure: 0.03mTorr Input power: 1. 64W/cm2 At this time, the arc counter is used // Arc monitor y AM Genes is) (Landmark Technology Co., Ltd.), and the measurement conditions are set to: sensing mode: energy, arc sensing voltage · 100V, large-medium energy boundary: 5〇mj, hard arc minimum time: 1 0 0// s ' and perform arc sensing, the measured input power amount when the arc is closed up to the end of the arc (before the arc interval is more than leap seconds),

314023(修正版）.ptc 第27頁 1293991 ^ ^ _tE 91121199_/3年（月，日 _修正_ 五、發明說明（21) 後繼續施行濺鍍處理直到積分投入功率量為〇 . 1Wh/cm 2為 止。結果如第2表中所示。 對此濺鍍處理前的靶之濺鍍面的表面粗糙度Ra，係根 據JISB 0 6 0 1 ( 1 9 94 )進行測量，結果如第2表中所示。表面 粗糙度計係採用SE 1 7 0 0 (小坂研究所產製），依觸針半捏： 2// m、饋送速度：（K5mm/sec、截止：λ c (K8mm、評估長 度：4mm的條件，進行測量。 第2表 樣本 No. 密度 (%) 密度 (g/cm3) 舰處理前技 面相糖度 m) 積分投入功率量 (Wh/cm2)1! 電弓瓜產生次婁欠 (次)12 bl 99.1 7.09 035 0.0100 261 b2 99.5 7.12 1.38 H 0.0120 1 一 1119 b3 1 99.1 7.09 1.01 0.0073 740 Μ 99.3 7.10 0.79 0.0091 __83 b5 99.6 7.13 2.47 0.0064 1052314023 (Revised).ptc Page 27 1393991 ^ ^ _tE 91121199_/3 years (month, day _ correction _ five, invention description (21) continue to perform sputtering process until the integral input power is 〇. 1Wh/cm 2 The results are shown in Table 2. The surface roughness Ra of the sputtering surface of the target before the sputtering treatment was measured according to JIS B 0 0 0 1 (1 9 94), and the results are as shown in Table 2. The surface roughness meter is based on SE 1 7 0 0 (manufactured by Otaru Research Institute), semi-pinch according to stylus: 2// m, feed speed: (K5mm/sec, cutoff: λ c (K8mm, evaluation length) : 4mm condition, measurement. Table 2 sample No. Density (%) Density (g/cm3) Pre-treatment technology surface sugar degree m) Integrated input power (Wh/cm2) 1! Electric bow melon generation (times) 12 bl 99.1 7.09 035 0.0100 261 b2 99.5 7.12 1.38 H 0.0120 1 -1119 b3 1 99.1 7.09 1.01 0.0073 740 Μ 99.3 7.10 0.79 0.0091 __83 b5 99.6 7.13 2.47 0.0064 1052

314023(修正版）.ptc314023 (revised edition).ptc

1 1 ···截至電弧產生間隔為1 0秒以上時的積分投入功率 量 * 2 ···截至電弧產生間隔為1 〇秒以上時的電弧產生次數 實施例B 2 從手製濺鍍裝置上剝除實施例B 1中所使用的樣本，並 施行真空包裝且靜置1天。然後，從真空包裝中取出樣 本，並安裝於上述手製濺鑛裝置上，依如同實施例B 1的满； 鍵條件，配合實施例B1的積分投入功率量’施行賤鍍處理 直到變為5Wh/cm 2為止。此外，如同實施例B1，進行濺鍛處 理前之表面粗糙度Ra的測量。結果如第3表中所示。 1293991銳隱⑽ 五、發明說明（22) 第3表 樣本 No. 糍前積分投入 功率量(Wh/cm2) 繼麟_理前之表面 .树級 Ra(/zm) 積分投入功率量 (Wh/cm2)” 電弧產生次數 (次)*2 bl 0.1 0.37 0.0004 2 b2 0.1 1.35 0.0009 2 b3 0.1 1.09 0.0005 3 b4 0.1 0.81 0.0009 4 b5 0.1 2.48 0.0004 2 * 1 ···截至電弧產生間隔為1 0秒以上時的積分投入功率 量 * 2 ···截至電弧產生間隔為1 0秒以上時的電弧產生次數 由第3表得知，有執行濺鍍處理者，在剛濺鍍後的電 弧收束上將較快速，電弧次數亦減少，具優越的初期電弧 特性。 實施例B 3 將實施例B2中所使用的樣本從手製濺鍍裝置上剝除 後，再安裝上，並依如同實施例B 1的丨賤鑛條件，配合實施 例B 1與實施例B 2的積分投入功率量，施行濺鍍處理直到變 為6 Wh/cm 2為止。結果，每個靶均未產生電弧間隔低於1 〇秒 的電弧。此外，如同實施例B 1，進行濺鍍處理前之表面粗 糙度Ra的測量。結果如第4表中所示。1 1 ··· The amount of integrated input power when the arc generation interval is 10 seconds or longer * 2 · The number of arc generations when the arc generation interval is 1 〇 or more Example B 2 Stripping from a hand-spraying device The sample used in Example B 1 was subjected to vacuum packaging and allowed to stand for 1 day. Then, the sample was taken out from the vacuum package and mounted on the above-mentioned hand-made sputtering apparatus, and the enthalpy plating treatment was carried out in accordance with the full-key condition of Example B1 in accordance with the integral input power amount of Example B1 until it became 5 Wh/ Up to cm 2 . Further, as in the example B1, the measurement of the surface roughness Ra before the sputter treatment was performed. The results are shown in Table 3. 1293991 sharp hidden (10) V. Description of invention (22) Sample No. 3 No. 积分 Integral input power (Wh/cm2) Sub-Lin _ front surface. Tree level Ra (/zm) Integrated input power (Wh/ Cm2)" Number of arc generations (times) *2 bl 0.1 0.37 0.0004 2 b2 0.1 1.35 0.0009 2 b3 0.1 1.09 0.0005 3 b4 0.1 0.81 0.0009 4 b5 0.1 2.48 0.0004 2 * 1 ···The arc generation interval is more than 10 seconds The amount of integrated input power* 2 ···· The number of arc generations when the arc generation interval is 10 seconds or longer is known from the third table. If the sputtering process is performed, the arc after the sputtering will be closed. Faster, the number of arcs is also reduced, and has superior initial arc characteristics. Example B 3 The sample used in Example B2 was stripped from the hand-sputtering apparatus and then mounted, as in Example B1. The antimony conditions were matched with the integrated input power of Example B 1 and Example B 2, and sputtering treatment was performed until it became 6 Wh/cm 2 . As a result, no arc interval was generated for each target of less than 1 〇. Arc. In addition, as in Example B 1, the surface before the sputter treatment Roughness Ra measurement. The results are shown in Table 4.

314023(修正版）.ptc 第29頁 1293991 «91121199 β年 6月介曰 修正 五、發明說明（23) 第4表 樣本 No. 前積分投入功 率量(Wh/cm2) 滅鍍處理前之表面 梱糙 積分投入功率量 (Wh/cm2)*! 電弧產生次數 (次)*2 bl 5.0 2.01 0 0 b2 5.0 1.74 0 0 b3 5.0 2.23 0 0 b4 5.0 2.92 0 0 b5 5.0 2.36 0 0 * 1 ···截至電弧產生間隔為1 0秒以上時的積分投入功率 量 * 2 ···截至電弧產生間隔為1 0秒以上時的電弧產生次數 【產業上可利用性】 本發明之濺鍍靶因為可有效的降低初期電弧的產生， 因此頗適於當作濺鍍與薄膜形成時所用的靶。314023 (Revised Edition).ptc Page 29 1139991 «91121199 Beta Year 6 Introduction Revision 5, Invention Description (23) Table 4 Sample No. Pre-Integrated Input Power (Wh/cm2) Surface 灭 before the plating treatment Rough integral input power (Wh/cm2)*! Number of arc generations (times)*2 bl 5.0 2.01 0 0 b2 5.0 1.74 0 0 b3 5.0 2.23 0 0 b4 5.0 2.92 0 0 b5 5.0 2.36 0 0 * 1 ··· The amount of integrated electric power when the arc generation interval is 10 seconds or more * 2 · The number of arc generations when the arc generation interval is 10 seconds or more [Industrial Applicability] The sputtering target of the present invention is effective It reduces the generation of the initial arc and is therefore suitable as a target for sputtering and film formation.

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Claims (1)

公 12㈣ 號 91121199 办年纟月々 曰 修正 _ 六、申请專iTIEll 1. 一種濺鍍靶之製造方法，係對靶表面進行機械研磨， 其次在出貨前預先對此靶的至少濺鍍面施行濺鍍處 理，而且，對該丨賤鍵之賤鍵面所施加的滅鍵處理之 積分投入功率量為0.0 0 5至10 Wh/cm2。 2. 如申請專利範圍第1項之濺鍍靶之製造方法，其中，該 靶係由燒結法所獲得的靶。 3. —種ITO濺鍍靶之製造方法，係對以氧化銦與氧化錫為 主成分之原料進行燒結而獲得的I TO輕之表面施行機械 研磨，其次在出貨前預先對此I TO乾的至少濺鍍面施行 濺鍍處理，而且，對該濺鍍靶之濺鍍面所施加的濺鍍 處理之積分投入功率量為0.0 0 5至10 Wh/cm2。Public 12 (4) No. 91121199 Office Year 々曰 Amendment _ VI. Application for iTIEll 1. A method of manufacturing a sputtering target, which is to mechanically grind the target surface, and then pre-spray at least the sputtering surface of the target before shipment. The plating treatment, and the integral input power amount of the key-off treatment applied to the 贱 key surface of the 丨贱 key is 0.005 to 10 Wh/cm2. 2. The method of producing a sputtering target according to the first aspect of the invention, wherein the target is a target obtained by a sintering method. 3. A method for producing an ITO sputtering target, which is a mechanical polishing of an I TO light surface obtained by sintering a raw material containing indium oxide and tin oxide as a main component, and secondarily pre-drying this I TO before shipment At least the sputtered surface is sputtered, and the integrated input power of the sputtering treatment applied to the sputtered surface of the sputter target is 0.05 to 10 Wh/cm2. 314023(修正版）.ptc 第32頁314023 (Revised).ptc第32页