JP4948633B2 - インジウムターゲット及びその製造方法 - Google Patents
インジウムターゲット及びその製造方法 Download PDFInfo
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- JP4948633B2 JP4948633B2 JP2010194532A JP2010194532A JP4948633B2 JP 4948633 B2 JP4948633 B2 JP 4948633B2 JP 2010194532 A JP2010194532 A JP 2010194532A JP 2010194532 A JP2010194532 A JP 2010194532A JP 4948633 B2 JP4948633 B2 JP 4948633B2
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- JP
- Japan
- Prior art keywords
- indium
- target
- average roughness
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- indium target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052738 indium Inorganic materials 0.000 title claims description 49
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000005266 casting Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 230000002159 abnormal effect Effects 0.000 description 13
- 229910001220 stainless steel Inorganic materials 0.000 description 11
- 239000010935 stainless steel Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D21/00—Casting non-ferrous metals or metallic compounds so far as their metallurgical properties are of importance for the casting procedure; Selection of compositions therefor
- B22D21/02—Casting exceedingly oxidisable non-ferrous metals, e.g. in inert atmosphere
- B22D21/027—Casting heavy metals with low melting point, i.e. less than 1000 degrees C, e.g. Zn 419 degrees C, Pb 327 degrees C, Sn 232 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D23/00—Casting processes not provided for in groups B22D1/00 - B22D21/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
直径250mm、厚さ5mmの銅製のバッキングプレート上の周囲を直径205mm、高さ7mmの円柱状の鋳型で囲い、その内部に160℃で溶解させたインジウム原料(純度5N)を流し込んだ後、室温まで冷却して、円盤状のインジウムインゴット(直径204mm×厚み6mm)を形成した。続いて、このインジウムインゴットの表面を、刃幅20mmのステンレス製スクレーパーによって切削加工し、インジウムターゲットを得た。
ステンレス製スクレーパーの刃幅を40mmとした以外は、実施例1と同様の条件でインジウムターゲットを作製した。
ステンレス製スクレーパーの刃幅を10mmとした以外は、実施例1と同様の条件でインジウムターゲットを作製した。
(実施例4)
ステンレス製スクレーパーの刃幅を5mmとした以外は、実施例1と同様の条件でインジウムターゲットを作製した。
ターゲット表面の切削を行わなかった以外は、実施例1と同様の条件でインジウムターゲットを作製した。
ステンレス製スクレーパーによるターゲット表面の切削加工に代えて、フライス加工を行った以外は、実施例1と同様の条件でインジウムターゲットを作製した。
実施例及び比較例で得られたインジウムターゲットについて、JIS B0601−1994の規定による「算術平均粗さ(Ra)」及び「十点平均粗さ(Rz)」を測定した。
また、これら実施例及び比較例のインジウムターゲットを、ANELVA製SPF−313Hスパッタ装置で、スパッタ開始前のチャンバー内の到達真空度圧力を1×10-4Pa、スパッタ時の圧力を0.5Pa、アルゴンスパッタガス流量を5SCCM、スパッタパワーを650Wで30分間スパッタし、目視により観察されたスパッタ中の異常放電の回数を計測した。
各測定結果を表1に示す。
実施例2は、ターゲット表面を、実施例1に比べて刃幅が40mmと広いステンレス製スクレーパーによって切削加工しており、算術平均粗さ(Ra)が1.6μmで十点平均粗さ(Rz)が15μmと実施例1より表面がやや粗かったが、異常放電は確認されなかった。
実施例3は、ターゲット表面を、実施例1に比べて刃幅が10mmと狭いステンレス製スクレーパーによって切削加工しており、算術平均粗さ(Ra)が1.2μmで十点平均粗さ(Rz)が10μmと実施例1より表面が平坦で、異常放電は確認されなかった。
実施例4は、ターゲット表面を、実施例1及び3に比べて刃幅が5mmと狭いステンレス製スクレーパーによって切削加工しており、算術平均粗さ(Ra)が0.8μmで十点平均粗さ(Rz)が8μmと実施例1及び3より表面が滑らかで、異常放電は確認されなかった。
比較例1は、ターゲット表面の切削を行っておらず、算術平均粗さ(Ra)が2μmで十点平均粗さ(Rz)が20μmと粗く、異常放電も80回と多かった。
比較例2は、スクレーパーによるターゲット表面の切削加工に代えてフライス加工により表面処理を行っているため、算術平均粗さ(Ra)が50μmで十点平均粗さ(Rz)が150μmと粗く、異常放電も250回と多かった。
Claims (4)
- ターゲット表面の算術平均粗さ(Ra)が1.6μm以下であり、ターゲット表面の十点平均粗さ(Rz)が15μm以下であるインジウムターゲット。
- 前記算術平均粗さ(Ra)が1.2μm以下である請求項1に記載のインジウムターゲット。
- 前記十点平均粗さ(Rz)が10μm以下である請求項1又は2に記載のインジウムターゲット。
- インジウム原料を溶解鋳造後、スクレーパーによる切削加工を行うことにより請求項1〜3のいずれかに記載のインジウムターゲットを作製するインジウムターゲットの製造方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010194532A JP4948633B2 (ja) | 2010-08-31 | 2010-08-31 | インジウムターゲット及びその製造方法 |
CN201410641327.7A CN104480435A (zh) | 2010-08-31 | 2011-05-12 | 铟靶材及其制造方法 |
US13/809,296 US20130105311A1 (en) | 2010-08-31 | 2011-05-12 | Indium Target And Method For Producing The Same |
EP11821373.5A EP2612952B1 (en) | 2010-08-31 | 2011-05-12 | Indium target and method for producing same |
PCT/JP2011/060969 WO2012029355A1 (ja) | 2010-08-31 | 2011-05-12 | インジウムターゲット及びその製造方法 |
KR1020127013556A KR101274385B1 (ko) | 2010-08-31 | 2011-05-12 | 인듐 타깃 및 그 제조 방법 |
CN2011800048448A CN102652185A (zh) | 2010-08-31 | 2011-05-12 | 铟靶材及其制造方法 |
TW100116983A TW201209203A (en) | 2010-08-31 | 2011-05-16 | Indium target and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010194532A JP4948633B2 (ja) | 2010-08-31 | 2010-08-31 | インジウムターゲット及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012052173A JP2012052173A (ja) | 2012-03-15 |
JP4948633B2 true JP4948633B2 (ja) | 2012-06-06 |
Family
ID=45772468
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010194532A Active JP4948633B2 (ja) | 2010-08-31 | 2010-08-31 | インジウムターゲット及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20130105311A1 (ja) |
EP (1) | EP2612952B1 (ja) |
JP (1) | JP4948633B2 (ja) |
KR (1) | KR101274385B1 (ja) |
CN (2) | CN104480435A (ja) |
TW (1) | TW201209203A (ja) |
WO (1) | WO2012029355A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4948634B2 (ja) | 2010-09-01 | 2012-06-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5140169B2 (ja) | 2011-03-01 | 2013-02-06 | Jx日鉱日石金属株式会社 | インジウムターゲット及びその製造方法 |
JP5026611B1 (ja) | 2011-09-21 | 2012-09-12 | Jx日鉱日石金属株式会社 | 積層構造体及びその製造方法 |
JP5074628B1 (ja) | 2012-01-05 | 2012-11-14 | Jx日鉱日石金属株式会社 | インジウム製スパッタリングターゲット及びその製造方法 |
KR20160085907A (ko) | 2012-08-22 | 2016-07-18 | 제이엑스금속주식회사 | 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법 |
US9922807B2 (en) | 2013-07-08 | 2018-03-20 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
JP6066018B2 (ja) * | 2014-07-03 | 2017-01-25 | 住友金属鉱山株式会社 | スパッタリング用ターゲット材とその製造方法 |
CN108165936A (zh) * | 2017-12-21 | 2018-06-15 | 清远先导材料有限公司 | 制备铟靶材的方法 |
CN112030119A (zh) * | 2020-08-27 | 2020-12-04 | 苏州思菲科新材料科技有限公司 | 一种铟管靶及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6344820A (ja) | 1986-08-11 | 1988-02-25 | 萩原工業株式会社 | 植物を直接被覆する保護シ−ト |
JP3152108B2 (ja) * | 1994-06-13 | 2001-04-03 | 東ソー株式会社 | Itoスパッタリングターゲット |
US5630918A (en) * | 1994-06-13 | 1997-05-20 | Tosoh Corporation | ITO sputtering target |
JPH08281208A (ja) * | 1995-04-07 | 1996-10-29 | Sumitomo Light Metal Ind Ltd | アルミニウム合金研削部の塗装前処理方法 |
CN100457961C (zh) * | 2001-09-18 | 2009-02-04 | 三井金属鉱业株式会社 | 溅射靶及其制备方法 |
JP2003089869A (ja) * | 2001-09-18 | 2003-03-28 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットおよびその製造方法 |
JP2005002364A (ja) * | 2003-06-09 | 2005-01-06 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲット及びその製造方法 |
JP2006257510A (ja) * | 2005-03-17 | 2006-09-28 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
US8003432B2 (en) * | 2008-06-25 | 2011-08-23 | Stion Corporation | Consumable adhesive layer for thin film photovoltaic material |
JP4992843B2 (ja) * | 2008-07-16 | 2012-08-08 | 住友金属鉱山株式会社 | インジウムターゲットの製造方法 |
-
2010
- 2010-08-31 JP JP2010194532A patent/JP4948633B2/ja active Active
-
2011
- 2011-05-12 CN CN201410641327.7A patent/CN104480435A/zh active Pending
- 2011-05-12 CN CN2011800048448A patent/CN102652185A/zh active Pending
- 2011-05-12 KR KR1020127013556A patent/KR101274385B1/ko active IP Right Grant
- 2011-05-12 WO PCT/JP2011/060969 patent/WO2012029355A1/ja active Application Filing
- 2011-05-12 EP EP11821373.5A patent/EP2612952B1/en active Active
- 2011-05-12 US US13/809,296 patent/US20130105311A1/en not_active Abandoned
- 2011-05-16 TW TW100116983A patent/TW201209203A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN104480435A (zh) | 2015-04-01 |
JP2012052173A (ja) | 2012-03-15 |
EP2612952A4 (en) | 2014-02-12 |
TW201209203A (en) | 2012-03-01 |
TWI372186B (ja) | 2012-09-11 |
US20130105311A1 (en) | 2013-05-02 |
WO2012029355A1 (ja) | 2012-03-08 |
KR101274385B1 (ko) | 2013-06-17 |
EP2612952A1 (en) | 2013-07-10 |
KR20120091246A (ko) | 2012-08-17 |
EP2612952B1 (en) | 2014-11-12 |
CN102652185A (zh) | 2012-08-29 |
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