TWI288308B - Immersion photolithography system and method using microchannel nozzles - Google Patents
Immersion photolithography system and method using microchannel nozzles Download PDFInfo
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- TWI288308B TWI288308B TW093117405A TW93117405A TWI288308B TW I288308 B TWI288308 B TW I288308B TW 093117405 A TW093117405 A TW 093117405A TW 93117405 A TW93117405 A TW 93117405A TW I288308 B TWI288308 B TW I288308B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Description
1288308 (1) 玖、發明說明 【發明所屬之技術領域】 '本發明關係於液體浸入式光微影術,更明確地說,係 有關於用以控制於浸入式光微影系統中之液體流動之速度 分配的方法與系統。 【先前技術】 光微影術的實際限制假定爲發生影像的媒介爲空氣。 這實際限制係由有效波長公式Λ eff= —^―,其中λ爲入 2 * 77 · ΝΑ 射光波長,ΝΑ爲投影光學系統之數値孔徑,及η爲媒介 之折射率。現在,藉由引入液體(替代空氣)於投影光學 系統之最後透鏡元件與一被成像之晶圓之間,該折射率改 變(增加),藉以藉由降低光源之有效波長,而增加解析 度。降低一光源的波長自動地完成更細微之解析度。以此 方式’浸入式微影術例如藉由有效地降低1 5 7nm光源爲 1 15nm光源波長而變成有吸引力,藉以增加解析度同時也 使得現行工業所慣用之相同光微影工具可以完成更臨限之 印刷。 同樣地’浸入式微影術也可以將微影術向下 推至145nm。於理論上,例如193nm工具之較舊技術現 在仍可以使用。同時,理論上,很多l57nm微影術之困 難’如大量之CaF2、硬薄膜、氮沖洗等也可以避免。 然而’儘管浸入式微影術有前途,但仍有若千問題, 這些問題使得浸入式光微影系統不能商業化。這些問題包 (2) 1288308 曰光學失真。例如’在浸入式微影掃描時,足夠g -負載 被建立,而干擾了系統效能。這些加速負載可能造造與透 鏡之振動、流體剪切交互作用,因而,造成光學劣化。在 浸入式微影術之透鏡流體環境內之上下掃描動作可能在光 學元件上產生變化之流體剪切力。這可能造成透鏡振動不 穩定’而造成光學”褪色”。其他之速度分佈不均勻也可能 造成光學失真。 【發明內容】 本發明有關於在曝光區內液體的近均勻速度分佈之浸 入式光微影系統,以實質地免除相關技藝中之一或多數問 題及缺點。 本案提供一種液體浸入式光微影系統,其包含一曝光 系統,其以電磁輻射曝光一基材並包含一投影光學系統, 其將電磁輻射對焦於基材上。一液體供給系統提供液體流 於該投影光學系統與基材之間。多數微噴嘴係可選用地安 排在投影光學系統之一側週邊上,以提供於基材被曝光之 區域中之液體流的實質均勻速度分佈。 於另一態樣中,提供一液體浸入式光微影系統,包含 一曝光系統,其以電磁輻射曝光一基材上之曝光區及包含 一投影光學系統。一液體流係產生在投影光學系統及該曝 光區之間。一微噴頭係在投影光學系統之一側上’並提供 曝光區以想要速度分佈之液體流。 本發明之其他特性及優點將說明於以下之說明中。本 -6- 1288308 (3) 發明之其他特性及優點將爲熟習於本技藝者基於以下說明 及本發明之教導加以了解。本發明之優點將藉由說明及其 申請專利範圍與附圖加以了解及體現。 應可以了解的是,前述一般說明及以下之詳細說明係 爲例示目的,並想要以對本發明所主張者提供進一步之說 明。 包含以提供對本發明例示實施例的進一步了解及構成 本說明書一部份之附圖例示了本發明之實施例,其與說明 一起作用以說明本案之原理。 【實施方式】 現參考本發明之實施例,其係例示於附圖中。 於浸入式光微影術中的一主要問題爲液體流的不均勻 ,尤其是在垂直方向中之梯度。該不均勻主要是由於其接 近一移動面,液體係與該表面(例如一晶圓的表面)接觸 。例如,於掃描時,該晶圓相對於曝光系統移動,在接近 其表面建立一 ”拖曳效應”。因此,液體動力學原理指出在 這些區域中,相對於晶圓表面之流體速度爲零(或至少接 近零),而當遠離晶圓表面時,流體速度爲最大。同樣地 ,相對於透鏡底面之流體速度爲零。這些流體速度變量被 稱爲”邊界層”速度分佈。這些作用的組合在液體中’產生 一剪切力,其建立了兩倍的光學失真問題:1 )於孔徑硬 體上,慣性振動力的產生(造成光學失真),及2 )在流 體內形成速度之條紋,這進一步造成光學失真。 -7- 1288308 (4) 另外,液體之注入曝光區中也同時提供在 之可能額外之不均勻性。例如’若干條紋可以 體中,進一步降低了曝光品質。同樣地,因爲 入曝光程序之故,所以’空氣泡、光學流體振 體流中之渦流也降低光微影系統之整體效能。 微影系統中之成像品質觀點看來’有關速度分 重要的。於理想下,液體速度分佈係在每一地 〇 第1圖爲本發明之液體浸入式光微影系統 如第1圖所示,一光微影工具的投影光學系統 透鏡1 02 (其典型由多數透鏡元件構成)。於 鏡]〇2具有一平坦底面108,但也可以不必如 度409 (見第4圖)可以調整,以維持對晶圓 定距離。 投影光學系統100同時也包含一外殼103 份被顯示)。外殼103包含一環形液體通道 用地,包含多數其他此等通道105B等等。液 1 〇 5 (於此圖中,流入經通道1 〇 5 A,並經由通 出)。箭頭107A、107B表示當晶圓101被掃 影光學系統1〇〇之視域中時,在晶圓101上之 向。 第2圖例示第1圖中所述之結構的仰視圖 所示’ 一通光孔徑區2 1 6定義投影光學系統 102之曝光區。各種箭頭i〇7A-107D、211A-2 速度分佈上 存在於該流 光學失真引 動、或於液 因此,由光 佈不均勻是 方都應均勻 之方塊圖。 1 0 0包含一* 此圖中’透 此。透鏡高 101之一特 (只有下部 105A、及選 體流經通道 道105B流 描於整個投 液體流動方 。如第2圖 I 〇 〇及透鏡 Π D例示在 1288308 (5) 任意給定時間中之可能液體流方向。可以由第2圖看出, 外殼103也包含若干加壓室215A-215D。每一加壓室215 也被稱爲”充塡室”。因此,充塡室215如下所述作爲一壓 力源。可以了解的是’當不發生曝光或晶圓1 01被更換時 ,液體流可以完全地關閉。 再者,如第2圖所示,外殼1 〇3的下部份可以被分爲 若干區。於此圖中,可以爲間隙217A-217D所分割開爲 四個此種區(四分)。可以了解的是,此等區的數目可以 多於或少於四個,但於多數應用中,期待四分係爲一最佳 數。例如,對於沿著一軸之動作,將外殼1 0 3分割爲兩區 也就足夠了。對於X-Y動作,四個區(四分)係較佳的 。爲了更大之控制,也可能需要八個區。此分區允許對液 體流方向的控制,這將如下所詳述。控制液體流方向使得 其可能對抗在透鏡ί〇2上之機械應變,因此,在X方向 中之流動分佈(特別是在一步驟中)可能與在 Υ方向( 特別是在一掃描中)中之流動分佈不同。 第3圖例示與第1圖相同之結構,除了液體流動方向 相反。可以爲熟習於本技藝者了解的是,於實際光微影系 統中,將液體流方向反轉的能力係重要的,因爲晶圓動作 的方向通常並不只限定於一方向。同樣地,可以爲熟習於 本技藝者所了解,如第2圖中,晶圓1 01可以移動於X 方向及Υ方向中。因此,將外殼103分爲四分允許液體 流方向被調整,用於晶圓移動的任何方向。 第4圖例示本發明之一實施例的其他細節。如第4圖 1288308 (6) 所示,透鏡透鏡102被安裝在外殻103 環形通道1 〇 5 A、1 0 5 B,液體經由該等 供給系統(於這些圖中未顯示)。由通 然後進入一第一大充塡室 215A。其: 41 2A進入一第一小充塡室41 4A (其係 室215A )。該漫射屏412A協助可能出 2 1 5 A中之渦流及氣泡。漫射屏4 1 2也 網。 第一小充塡室414A也作爲一壓力 室4 1 4 A,液體流經多數微通道噴嘴( 係安排呈一微噴頭的形式。因此,藉 4 1 6的時間,在入口至所有微噴嘴4 1 6 及渦流及氣泡已經由液體上實際移除。 液體流入在透鏡1 02下之通光孔徑區 1 〇2及晶圓1 0 1間之空間被塡滿該液體 於該通光孔徑區2 1 6中,液體流於 並沒有渦流、氣泡、條紋及其他會影響 兀夹° 在通光孔徑區2 1 6的另一側上,液 微通道噴嘴41 6Β進入一第二小充塡室 屏412Β,進入一大充塡室215Β及離開: 因此,於第4圖中,晶圓1 〇 1由左 晶圓101在液體上,建立”拖曳效應”。 需要由右至左,以對抗”拖曳效應”’並 中。外殼1 〇 3具有 通道流進出一液體 道105Α中,液體 然後流經一漫射屏 t典型小於第一充塡 ^現在第一大充塡室 作爲一壓力下降篩 室。由第一小充塡 微噴嘴)416A,其 由液體到達微噴嘴 之壓力爲均勻的, 在微噴嘴4 1 6後, 2 1 6,使得於透鏡 〇 高度上係均勻的, 光學影像品質之不 體再一次流經一組 4 1 4 B,經由一漫射 通道105B 。 向右的相對移動, 因此,液體流方向 造成實質均勻速度 -10- 1288308 (7) 分佈。 於第4圖中,420表示在通光孔徑區216中爲晶圓 1〇1移動所造成之有效流體流速分佈。421表示由微通道 噴嘴4 1 6之抗注入流體分佈,得到在透鏡〗〇2與在通光孔 徑區2 1 6中之液體間之界面,接近淨零之所得流體速度。 微通道噴嘴4 1 6同時也必須經常地更新(即更換)工 作液體(其必須防止隨著時間解離,因爲受到密集電磁輻 射的曝射可能破壞液體分子),以排除熱梯度,造成折射 率失真及影像品質劣化。避免由於定流量之液體(例如水 )的解離爲另一優點。在短曝光波長時,水可以解離於約 2.86J/cm2RT及正常 P下降至 4.75xl(T19J每分子。於 193nm,一光子承載l.〇3xl(T]8J。另外,保持液體更新允 許維持液體的定溫。液體可以於曝光時,或於曝光間更新 〇 微噴嘴4 1 6同時也作爲一緩衝器,以對抗於光學件與 液體間之慣性剪切力。注意剪切力係由公式F = A · // · 土 dx ,其中A爲面積,//爲速度參數,X爲距離變數、及v爲 速度。在晶圓101及透鏡102間之典型100微米間隙中, 剪切力大約1牛頓。這些剪切力之中和化係藉由慣性阻尼 於透鏡1 〇 2及流體間之相對加速動作加以完成。這係藉由 簡單地在相反於掃描之方向中,建立流體動作加以完成。 微通道噴嘴4 1 6也作爲一緩衝器,以對抗於光學件與流體 間之慣性剪切力。 另外,外殼1 0 3包含一系統,用以供給氣體以由晶圓 -11 - 1288308 (8) 1 〇 1移除過量之液體。外殻1 〇 3包含一供給側環帶4 0 6 A ,用以氣體由氣體供給系統(未示於第4圖中)流動;一 氣封410A,其橋接至晶圓10】之距離並完成—,,刮板”, 以包含及移除過量液體,及一回來側氣體流出環帶4 〇 5 A (過量液體經由該處加以移除)。過量液體可以經由送回 側氣體流出環帶4 0 5 A與排出氣體加以移除。一類似結構 可以在外殼1 0 3之相對四分之一中找出,如第4圖之左側 所示。氣體供給系統配合液體供給系統動作,只有液體流 出現時,當有液體流動於通光孔徑區2 1 6時,隨後,氣體 供給系統需要被用上。 於第4圖中,應注意,晶圓由左向右移動時,液體流 係在通道105 A”內”,及在通道105B”外,,。當掃描方向逆 轉時,液體流也逆轉。 第5圖顯示第4圖之微噴嘴結構區之部份等角圖。通 道105 A-105D (未示於第5圖中)係連接至外管507八-5 〇 7 D,液體係經由這些外管加以供給。同樣地,雖然未 示於圖中,但環帶405、406也可以連接至管狀氣體聯結 管。 第6圖爲可以用於本發明之液體排出速度分佈例。可 以爲熟習於本技藝者所知,一 ”自然”速度分佈係隨著第4 圖之高度爲不均勻,而是具有一垂直梯度,這可能造成光 學失真。爲了補償此自然梯度,可以使用不同長度之管( 微噴嘴416),如第6圖所示。於第6圖中,微通道長度 範圍由最大値L;至一最小値L2,造成顯示在第6圖左側 -12- 1288308 (9) 所示之微噴嘴4 1 6的出口處之速度分佈。微噴嘴4 1 6愈長 ’則由特定噴嘴之液體輸出速度愈低。再者,如果需要對 速度分佈作進一步控制,則微噴嘴4 1 6本身可能具有不同 直徑。注意,爲了更進一步控制速度分佈,微噴嘴4 1 6之 管並不必然平行於晶圓1 0 1。 在典型系統中之晶圓1 〇 1上之液體高度大約1 〇〇微米 。由於較大高度造成需要控制較大量之速度分佈,所以會 造成需要更多微噴嘴416A。 因此,小心選擇微噴嘴4 1 6之長度、直徑及方向,在 晶圓1 〇 1之通光孔徑區2 1 6中之速度分佈可以被控制,而 造成在整個通光孔徑區216區之相當均勻之速度分佈,藉 以改良曝光品質。本質上,由例如第6圖所示之結構所產 生之速度分佈可以”相反”於”自然”分佈。因此,微噴嘴 4 1 6之特性係被調整,以造成實質均勻速度分佈。 於掃描時,當液體再循環並注入於一方向時,晶圓 1 〇 1移動於一相反方向。本發明之作用係中和化爲掃描動 作所造成之液體速度分佈,造成在透鏡1 〇2及液體間之慣 性阻尼。換句話說,淨作用爲”零”淨慣性及速度分佈與動 作無關。取決於液體流之方向,可以完成剪切力的降低或 免除,或者是光學失真的降低。因此,浸入式光微影製程 能執行由於定流體更新在峰値位準,避免了氣泡、及緩衝 了光流體振動。 注意雖然於充塡室2 1 5中之液體可能具有渦流及氣泡 ,但在其行經漫射屏4 1 2時,其流量爲均勻。因此,在通 -13- 1288308 (10) 過漫射屏4 1 2、充塡室4 1 4及離開微噴嘴4 1 6後,液體流 具有一想要速度分佈,而不會有由條紋、光流體振動、渦 流、氣泡、及其他不均勻所造成之缺陷,因而改良了影像 品質。 如上所述,透鏡102之底面108並不必爲平坦。也可 能使用具有曲面底部表面1 〇 8之透鏡1 02,用以補償適當 安排微噴嘴長度、直徑及方向之造成之速度分佈不均勻, 以完成一接近均勻速度分佈。 微噴嘴4 1 6也可以使用傳統微影技術於矽材料上加以 建構。於顯微鏡規格上,微噴嘴4 1 6組合由管構成之螺巢 材料,該等管係以交錯方式堆疊,以展現液壓直徑及長度 的主要特徵規格。微噴嘴4 1 6也可以具有擴大口,進入通 光孔徑區2 1 6中。 微噴嘴4 1 6之典型管形直徑可以變化,例如由幾微米 到幾十微米(例如5至50微米),及於部份例子中,於 直徑多至5mm,及長度於約1〇至1〇〇直徑。也可以使用 其他長度及/或直徑。圓噴嘴外之狹縫也可以使用。每單 位面積之微噴嘴的數量也可以變化。 對於1 9 3 nm成像,液體較佳爲水(例如去離子水) ,但其他液體,例如環辛烷、Krypton ( FombI in石油)及 過氟聚醚油也可以使用。 本發明對於一液體浸入式光微影系統有著若千優點。 例如’於一步進及掃描系統中,穿透率被改良,因此,有 較低之失真。於空氣中灰塵微粒不能進入於透鏡]〇2及晶 -14 - 1288308 (11) 圓1 0 1間之通光孔徑區2 1 6,因爲液體本身並不包含任何 灰塵,及液體的出現會對曝光時出現在通光孔徑區2 1 6中 之灰塵的一種阻障。較佳,液體在晶圓1 〇 1被載入一晶圓 台後被帶入,及在晶圓1 〇 1被卸載前被移除。這最小化灰 塵及微粒污染。另外,於晶圓交換時,防止液體溢出的方 法也有好幾種,及本發明並不限定於上述之一種。 爲掃描動作所引入之流體速度分佈係被中和化,造成 在透鏡1 02及剪切流體間之慣性阻尼。除了作爲慣性阻尼 外,微噴嘴4 1 6也作用以更新工作流體容積,藉以免除由 於光源造成之熱梯度所引起之折射失真。微噴嘴4 1 6的另 一優點爲其於容積更新時不利於氣泡的形成。同時,這些 微墳嘴4 1 6的大小防止氣泡的形成,氣泡的形成損及了很 多傳統更新技術。所有這些優點允許使用現行光微影工具 及波長,以在一半導體表面上,定義更小的特性。 結論 雖然本發明之各種實施例已經說明如上,但應了解的 是,這些係作爲例示,而不是限定用。可以爲熟習於本技 藝者所了解,各種於形式及細節上之變化可以在不脫離本 發明之精神及範圍下加以完成。 本發明已經在功能方塊圖及方法步驟的協助下,例示 了其特定功能及關係。這些方塊圖及方法步驟的邊界已經 任意定義。其他邊界也可以定義,只要其特定功能及關係 被適當地執行。同時,方法步驟的順序也可以再排列。此 -15- 1288308 (12) 等替代邊界也在本發明之精神及範圍內。熟習於本技藝者 可以了解,這些方塊圖可以由分立元件、客戶指定積體電 路、處理機執行適當軟體等等或其組合。因此,本發明之 範圍應不爲上述例示實施例所限定,應依據以下之申請專 利範圍及其等效加以定義。 【圖式簡單說明】 第1圖爲一基本液體浸入式光微影組件側視圖。 第2圖爲第1圖之組件平面圖。 第3圖爲相較於第1圖之基本液體浸入式光微影組件 ’其中之液體流方向相反。 第4圖顯示液體浸入式光微影系統之其他細節。 第5圖爲第4圖之結構的部份立體圖。 第6圖爲一例示液體速度分佈。 &要元件對照表 1〇〇 :投影光學系統 1 〇 1 :晶圓 102 :透鏡 103 :外殼 105 :通道 1 0 5 A,B :通道 ]0 7 A - D :箭頭 1 08 :底面 - 16- 1288308 (13) 2 1 1 A 2 15: 2 16: 2 1 7 A 4 0 5, 4 0 6, 409 : 4 1 0 A 4 1 2 A 4 1 4 A 4 16, • D :箭頭 加壓室 通光孔徑區 D :間隙 405 A :環帶 406A :環帶 透鏡高度 :氣封 ,B :漫射屏 ,B :充塡室 416A :微噴嘴 5 07 A-D :外管
Claims (1)
- (1) 1288308 拾、申請專利範圍 附件二A :第93117405號修正後無劃線之 中文申請專利範圍替換本民國95年9月8日呈 1 · 一種液體浸入式光微影系統,包含: $ —曝光系統,其以電磁輻射曝光一基材及包含一投影 w i 光學系統,其將電磁輻射對焦在基材上; f?:.: S 一液體供給系統,其在投影光學系統及基材間,提供 r 液體流;及 V 多數微噴嘴,安排在該投影光學系統之一週邊旁,以 % 在基材及投影光學系統間,提供液體流之實質均勻速度分 佈。 | 2.如申請專利範圍第1項所述之液體浸入式光微影 系統,其中上述之多數微噴嘴包含多數變化長度之管。 3 .如申請專利範圍第2項所述之液體浸入式光微影 系統,其中上述之多數長度變化的管提供速度分佈,其補 壤不均勻性。 4.如申請專利範圍第1項所述之液體浸入式光微影 系統,其中上述之液體供給系統包含: 一輸入通道,用以輸送液體進入一第一充塡室; 一第一漫射屏,該液體可以經由該漫射屏流入一第二 充塡室; 其中該液體可以然後流入微噴嘴。 1288308 (2) 5 ·如申請專利範圍第4項所述之液體浸入式光微影 系統’其中上述之液體供給系統更包含: 一第二多數微噴嘴,用以由曝光區移除該液體進入一 第三充塡室; 一第二漫射屏,經由該漫射屏,液體流入一第四充塡 室;及 一輸出通道,液體係經由該通道循環。 6 ·如申請專利範圍第1項所述之液體浸入式光微影 系統’其中上述之投影光學系統包含一外殼,在外殼及基 材間有一氣封。 7 ·如申請專利範圍第6項所述之液體浸入式光微影 系統’其中該外殻包含多數環帶通道,連接至該氣封,一 負壓係經由該氣封維持在該曝光區旁,以移除殘留液體。 8 ·如申請專利範圍第1項所述之液體浸入式光微影 系統’其中上述之多數微噴嘴直徑係於5微米至5毫米間 〇 9 ·如申請專利範圍第1項所述之液體浸入式光微影 系統,其中上述之多數微噴嘴爲狹縫形。 10·如申請專利範圍第1項所述之液體浸入式光微影 系統,其中上述多數微噴嘴的至少一部份包含一擴大口部 份’進入在基材與投影光學系統間之一區域。 1 1 ·如申請專利範圍第i項所述之液體浸入式光微影 系統,其中上述之液體流的方向爲可逆的。 12*如申請專利範圍第1項所述之液體浸入式光微影 -2 - 1288308 (3) 系統,其中上述之液體供給系統包含至少三通道’其中可 以流通有液體。 13.如申請專利範圍第1項所述之液體浸入式光微影 系統,其中上述之液體供給系統補償於速度分佈中之不均 勻。 1 4 . 一種液體浸入式光微影系統,包含: 一曝光系統,其以電磁輻射曝光在一基材上之一曝光 區並包含一投影光學系統; 提供機構,用以提供一液體流於該投影光學系統與該 曝光區之間;及 一第一微噴頭,在該投影光學系統之一側,其當液體 流出現在曝光區時,提供具有想要速度分佈之液體流。 1 5 ·如申請專利範圍第14項所述之液體浸入式光微 影系統,其中上述之微噴頭包含多數具有變化長度之管。 1 6 ·如申請專利範圍第1 5項所述之液體浸入式光微 影系統’其中上述之多數長度變化的管提供一速度分佈, 其補償不均勻。 17·如申請專利範圍第14項所述之液體浸入式光微 影系統’更包含一液體供給系統,其包含: 一輸入通道,用以輸送該液體進入一第一充塡室; 一第一漫射屏,經由該漫射屏,流體可以流入一第二 充塡室, 其中該液體經由該微噴頭流入該曝光區。 Ϊ 8 ·如申請專利範圍第1 7項所述之液體浸入式光微 -3 - 1288308 (4) 影系統,其中上述之液體供給系統更包含: 一第二微噴頭,用以自曝光區移除液體進入一第三充 塡室; 一第二漫射屏,液體經由該漫射屏可以流入一第四充 塡室;及 一輸出通道,液體可以經由該通道循環出曝光區。 19·如申請專利範圍第14項所述之液體浸入式光微 影系統,其中上述之投影光學系統包含一外殼,在外殼與 修 該基材之間具有一氣封。 20.如申請專利範圍第1 9項所述之液體浸入式光微 影系統,其中上述之外殻包含多數通道,一負壓係經由該 等通道維持在曝光區旁,以移除殘留液體。 2 1 ·如申請專利範圍第14項所述之液體浸入式光微 影系統,其中上述之微噴頭具有多數微噴嘴,其直徑係在 5微米至5毫米之間。 22. 如申請專利範圍第21項所述之液體浸入式光微 鲁 影系統,其中上述之至少部份之微噴嘴包含一擴大口部份 ,其進入該曝光區。 23. 如申請專利範圍第21項所述之液體浸入式光微 影系統,其中上述之多數微噴嘴爲狹縫形。 24. 如申請專利範圍第14項所述之液體浸入式光微 影系統,其中上述之液體流的方向爲可逆的。 2 5 .如申請專利範圍第1 7項所述之液體浸入式光微 影系統,其中上述之液體供給系統包含至少三通道,液體 -4 - 1288308 (5) 可以流經該等通道。 26.如申請專利範圍第14項所述之液體浸入式光微 影系統,其中上述之微噴頭補償由於掃描造成之速度分佈 之不均勻。 27· —種液體浸入式光微影系統,包含: 一曝光系統,其以電磁輻射曝光一基材上之一曝光區 並包含一投影光學系統;及 一液體流動於該投影光學系統與該曝光區之間,並具 有一速度分佈,以補償該曝光系統與該基材之相對運動。 28· —種液體浸入式光微影系統,包含: 一曝光系統,其以電磁輻射曝光一基材上之一曝光區 並包含一投影光學系統; 多數微噴嘴,在該投影光學系統之一透鏡週邊旁,該 等微噴嘴在曝光區提供一液體流。 29. —種液體浸入式光微影系統,包含: 一曝光系統,其以電磁輻射曝光一基材上並包含一投 影光學系統,其將該電磁輻射對焦至該基材上;及 一液體供給系統,其提供液體流於該投影光學系統與 該基材之間, 其中該液體流之方向可以改變,以補償基材移動的方 向。 30. 如申請專利範圍第29項所述之液體浸入式光微 影系統,更包含多數微噴嘴,安排在該投影光學系統之一 週邊,以提供在基材與該投影光學系統間之液體流的實質 -5- 1288308 (6) 均勻速度分佈。 3 1·如申請專利範圍第3 0項所述之液體浸入式光微 影系統,其中該等多數噴嘴包含多數變化長度之管。 3 2 ·如申請專利範圍第3 1項所述之液體浸入式光微 影系統,其中上述之變化長度管提供一速度分佈,用以補 償不均勻。 33·如申請專利範圍第29項所述之液體浸入式光微 影系統,其中該液體供給系統包含·· 一輸入通道,用以輸送液體進入一第一充塡室; 一第一漫射屏,液體可以經由該漫射屏流入一第二充 塡室, 其中該液體可以然後流入該等微噴嘴。 34·如申請專利範圍第33項所述之液體浸入式光微 影系統,其中該液體供給系統更包含: 一第二多數微噴嘴,由該曝光區去除液體進入一第三 充塡室; 一第二漫射屏,液體經由該漫射屏流入一第四充塡室 :及 一輸出通道,液體經由該處加以循環。 35·如申請專利範圍第29項所述之液體浸入式光微 影系統,其中該液體供給系統補償於一速度分佈中之不均 勻。 3 6 · —種曝光一基材的方法,包含步驟: 使用一投影光學系統,投射電磁輻射至該基材; -6 - 流;及 速度分佈 更包含步 髀0 更包含步 材上; ;及 方向中之 更包含步 1288308 (7) 在投影光學系統與該基材之間,輸送一液體 控制液體流的速度分佈,以提供實質均勻的 〇 37·如申請專利範圍第36項所述之方法, 驟:使用一氣體供給系統,自該基材移除過量液 38. 如申請專利範圍第36項所述之方法, 驟:逆轉該液體流的方向。 39. —種曝光一基材的方法,包含步驟: 使用一投影光學系統,將電磁輻射投射至基 在該投影光學系統及基材間,輸送一液體流 改變該液體流的方向,以補償在基材移動的 變化。 40·如申請專利範圍第39項所述之方法, 驟:使用一氣體供給系統,由基材移除過量之液體
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TWI457180B (zh) * | 2011-08-15 | 2014-10-21 | Hermes Epitek Corp | 氣體噴頭 |
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