CN101241308A - 浸入式光刻***及对基底曝光的方法 - Google Patents

浸入式光刻***及对基底曝光的方法 Download PDF

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CN101241308A
CN101241308A CNA2008100030143A CN200810003014A CN101241308A CN 101241308 A CN101241308 A CN 101241308A CN A2008100030143 A CNA2008100030143 A CN A2008100030143A CN 200810003014 A CN200810003014 A CN 200810003014A CN 101241308 A CN101241308 A CN 101241308A
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赫尔曼·沃格
克劳斯·斯蒙
安东尼尔斯·T·A·M·德克森
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Abstract

本申请公开了一种***，包括：投影光学***，被配置成采用形成有图案的辐射束对基底曝光，其中基底和投影光学***被配置成沿着扫描方向的轴彼此相对移动；以及喷头，包括与所述轴平行并且彼此平行的多个通道，所述喷头位于投影光学***和基底之间，并被配置成在投影光学***和基底局部区域之间的空间中提供浸入液体，形成有图案的束通过所述浸入液体而投射。本申请还涉及使用投影光学***对基底曝光的方法。

Description

浸入式光刻***及对基底曝光的方法
本申请是申请日为2004年6月18日是、申请号为200410059735.8、发明名称为“浸入式光刻***及使用微通道喷嘴的方法”的发明专利申请的分案申请。
技术领域
本发明涉及液体浸入式光刻术，更明确地说，涉及用以控制于浸入式光刻***中的液体流动的速度分配的方法与***。
背景技术
光刻术的实际限制假定为发生影像的媒介为空气。这实际限制系由有效波长公式 Λ eff = λ 2 · n · NA , 其中λ为入射光波长，NA为投影光学***的数值孔径，及n为媒介的折射率。现在，藉由引入液体(替代空气)于投影光学***的最后透镜组件与一被成像的晶片之间，该折射率改变(增加)，藉以藉由降低光源的有效波长，而增加分辨率。降低一光源的波长自动地完成更细微的分辨率。以此方式，浸入式光刻术例如藉由有效地降低157nm光源为115nm光源波长而变成有吸引力，藉以增加分辨率同时也使得现行工业所惯用之相同光刻工具可以完成更临限的印刷。
同样地，浸入式光刻术也可以将193nm光刻术向下推至145nm。于理论上，例如193nm工具的较旧技术现在仍可以使用。同时，理论上，很多157nm光刻术的困难，如大量的CaF2、硬薄膜、氮冲洗等也可以避免。
然而，尽管浸入式光刻术有前途，但仍有若干问题，这些问题使得浸入式光刻***不能商业化。这些问题包含光学失真。例如，在浸入式光刻扫描时，足够g-负载被建立，而干扰了***效能。这些加速负载可能引起与透镜的振动、流体剪切交互作用，因而，造成光学劣化。在浸入式光刻术的透镜流体环境内的上下扫描动作可能在光学组件上产生变化的流体剪切力。这可能造成透镜振动不稳定，而造成光学“褪色”。其它的速度分布不均匀也可能造成光学失真。
发明内容
本发明有关在曝光区内液体的近均匀速度分布的浸入式光刻***，以实质地免除相关技术中之一或多个问题及缺点。
本发明提供一种液体浸入式光刻***，其包含一曝光***，其以电磁辐射曝光一基底并包含一投影光学***，其将电磁辐射对焦于基底上。一液体供给***提供液体流于该投影光学***与基底之间。多个微喷嘴系可选用地安排在投影光学***的一侧***上，以提供于基底被曝光的区域中的液体流的实质均匀速度分布。
于另一方面中，提供一液体浸入式光刻***，包含一曝光***，其以电磁辐射曝光一基底上的曝光区及包含一投影光学***。一液体流系产生在投影光学***及该曝光区之间。一微喷头系在投影光学***的一侧上，并提供曝光区以想要速度分布的液体流。
根据本发明，提供一种***，包括：投影光学***，被配置成采用形成有图案的辐射束对基底曝光，其中基底和投影光学***被配置成沿着扫描方向的轴彼此相对移动；以及喷头，包括与所述轴平行并且彼此平行的多个通道，所述喷头位于投影光学***和基底之间，并被配置成在投影光学***和基底的局部区域之间的空间中提供浸入液体，形成有图案的束通过所述浸入液体而投射。
根据本发明，还提供一种液体浸入式光刻***，包括：投影光学***，被配置成对基底曝光，其中所述基底和所述投影光学***沿扫描方向的轴彼此相对移动；以及液体供给***，在投影光学***和基底之间提供液体流动，液体流动的方向可调节，其中所述液体供给***包括形成微通道的多个微喷嘴，每一个微通道与基底平行并且彼此平行，被安排在投影光学***的***，并被配置成在基底和投影光学***之间提供实质上均匀的液体流动的流体速度分布。
根据本发明，还提供一种对基底曝光的方法，包括：使用投影光学***对基底曝光，使得基底和投影光学***沿扫描方向的轴彼此相对移动；使用包括多个通道的喷头，在投影光学***和基底之间输送液体流，使得每一个通道独立地控制通过各自通道的流动速率，并且通道在投影光学***和基底之间一起产生可控制的流体速度分布；以及维持液体流动的实质均匀的流体速度分布。
根据本发明，还提供一种***，包括：投影光学***，被配置成对基底曝光，其中基底和投影光学***被配置成沿着扫描方向的轴彼此相对移动；以及喷头，包括与所述轴平行并且彼此平行的多个通道，所述喷头位于投影光学***和基底之间，以及液体供给***，包括：输入通道，被配置成向第一充填室中输送液体；以及第一漫射屏，液体可通过该第一漫射屏流入第二充填室中，其中液体通过喷头流入曝光区域中。
根据本发明，还提供一种液体浸入式光刻***，包括：投影光学***，被配置成对基底曝光，其中所述基底和所述投影光学***被配置成沿扫描方向的轴彼此相对移动；以及喷头，包括与所述轴平行并且彼此平行的多个通道，喷头位于投影光学***和基底之间，其中从所述喷头喷出的液体的流动方向是可逆转的。
本发明的其它特性及优点将说明于以下的说明中。本发明的其它特性及优点将为本领域技术人员基于以下说明及本发明的教导加以了解。本发明的优点将藉由说明及其申请专利范围与附图加以了解及体现。
应可以了解的是，前述一般说明及以下的详细说明作为例示目的，并想要以对本发明所主张者提供进一步的说明。
附图说明
包含以提供对本发明例示实施例的进一步了解及构成本说明书一部份的附图例示了本发明的实施例，其与说明一起作用以说明本发明的原理。
图1为一基本液体浸入式光刻组件侧视图。
图2为图1之组件平面图。
图3为相比较于图1的基本液体浸入式光刻组件，其中的液体流方向相反。
图4显示液体浸入式光刻***的其它细节。
图5为图4的结构的部份立体图。
图6为一例示液体速度分布。
具体实施方式
现参考本发明的实施例，其例示于附图中。
于浸入式光刻术中的一主要问题为液体流的不均匀，尤其是在垂直方向中的梯度。该不均匀主要是由于其接近一移动面，液体系与该表面(例如一晶片的表面)接触。例如，于扫描时，该晶片相对于曝光***移动，在接近其表面建立一“拖曳效应”。因此，液体动力学原理指出在这些区域中，相对于晶片表面的流体速度为零(或至少接近零)，而当远离晶片表面时，流体速度为最大。同样地，相对于透镜底面的流体速度为零。这些流体速度变量被称为“边界层”速度分布。这些作用的组合在液体中，产生一剪切力，其建立了两倍的光学失真问题：1)于孔径硬件上，惯性振动力的产生(造成光学失真)，及2)在流体内形成速度的条纹，这进一步造成光学失真。
另外，液体注入曝光区中也同时提供在速度分布上可能额外的不均匀性。例如，若干条纹可以存在于该流体中，进一步降低了曝光品质。同样地，因为光学失真引入曝光程序之故，所以，空气泡、光学流体振动、或于液体流中的涡流也降低光刻***的整体效能。因此，由光刻***中的成像品质观点看来，有关速度分布不均匀是重要的。于理想下，液体速度分布是在每一地方都应均匀。
图1为本发明的液体浸入式光刻***的方块图。如图1所示，一光刻工具的投影光学***100包含一透镜102(其典型由多个透镜组件构成)。于此图中，透镜102具有一平坦底面108，但也可以不必如此。透镜高度409(见图4)可以调整，以维持对晶片101的一特定距离。
投影光学***100同时也包含一外壳103(只有下部份被显示)。外壳103包含一环形液体通道105A、及选用地，包含多个其它此等通道105B等等。液体流经通道105(于此图中，流入经通道105A，并经由通道105B流出)。箭头107A、107B表示当晶片101被扫描于整个投影光学***100的视域中时，在晶片101上的液体流动方向。
图2例示图1中所述的结构的仰视图。如图2所示，一通光孔径区216定义投影光学***100及透镜102的曝光区。各种箭头107A-107D、211A-211D例示在任意给定时间中可能的液体流方向。可以由图2看出，外壳103也包含若干加压室215A-215D。每一加压室215也被称为“充填室”。因此，充填室215如下所述作为一压力源。可以了解的是，当不发生曝光或晶片101被更换时，液体流可以完全地关闭。
再者，如图2所示，外壳103的下部份可以被分为若干区。于此图中，可以为间隙217A-217D所分割开为四个此种区(四分)。可以了解的是，这些区的数目可以多于或少于四个，但于多个应用中，期待四分系为一最佳数。例如，对于沿着一轴的动作，将外壳103分割为两区也就足够了。对于X-Y动作，四个区(四分)是较佳的。为了更大地控制，也可能需要八个区。此分区允许对液体流方向的控制，这将如下所详述。控制液体流方向使得其可能对抗在透镜102上的机械应变，因此，在X方向中的流动分布(特别是在一步骤中)可能与在Y方向(特别是在一扫描中)中的流动分布不同。
图3例示与图1相同的结构，除了液体流动方向相反。可以为本领域技术人员了解的是，于实际光刻***中，将液体流方向反转的能力是重要的，因为晶片动作的方向通常并不只限定于一方向。同样地，可以为本领域技术人员所了解，如图2中，晶片101可以移动于X方向及Y方向中。因此，将外壳103分为四分允许液体流方向被调整，用于晶片移动的任何方向。
图4例示本发明之一实施例的其它细节。如图4所示，透镜102被安装在外壳103中。外壳103具有环形通道105A、105B，液体经由该等通道流进出一液体供给***(于这些图中未显示)。由通道105A中，液体然后进入一第一大充填室215A。其然后流经一漫射屏412A进入一第一小充填室414A(其是典型小于第一充填室215A)。该漫射屏412A协助可能出现在第一大充填室215A中的涡流及气泡。漫射屏412也作为一压力下降筛网。
第一小充填室414A也作为一压力室。由第一小充填室414A，液体流经多个微通道喷嘴(微喷嘴)416A，其是安排呈一微喷头的形式。因此，藉由液体到达微喷嘴416的时间，在入口至所有微喷嘴416的压力为均匀的，及涡流及气泡已经由液体上实际移除。在微喷嘴416后，液体流入在透镜102下的通光孔径区216，使得于透镜102及晶片101之间的空间被填满该液体。
于该通光孔径区216中，液体流于高度上是均匀的，并没有涡流、气泡、条纹及其它会影响光学影像品质的不完美。
在通光孔径区216的另一侧上，液体再一次流经一组微通道喷嘴416B进入一第二小充填室414B，经由一漫射屏412B，进入一大充填室215B及离开通道105B。
因此，于图4中，晶片101由左向右的相对移动，晶片101在液体上，建立“拖曳效应”。因此，液体流方向需要由右至左，以对抗“拖曳效应”，并造成实质均匀速度分布。
于图4中，420表示在通光孔径区216中为晶片101移动所造成的有效流体流速分布。421表示由微通道喷嘴416的抗注入流体分布，得到在透镜102与在通光孔径区216中的液体间之界面，接近净零之所得流体速度。
微通道喷嘴416同时也必须经常地更新(即更换)工作液体(其必须防止随着时间解离，因为受到密集电磁辐射的曝射可能破坏液体分子)，以排除热梯度，造成折射率失真及影像品质劣化。避免由于定流量的液体(例如水)的解离为另一优点。在短曝光波长时，水可以解离于约2.86J/cm2RT及正常P下降至4.75×10-19J每分子。于193nm，一光子承载1.03×10-18J。另外，保持液体更新允许维持液体的定温。液体可以于曝光时，或于曝光间更新。
微喷嘴416同时也作为一缓冲器，以对抗于光学件与液体间的惯性剪切力。注意剪切力是由公式 F = A · μ · dv dx , 其中A为面积，p为速度参数，x为距离变量、及v为速度。在晶片101及透镜102间的典型100微米间隙中，剪切力大约1牛顿。这些剪切力的中和化是藉由惯性阻尼于透镜102及流体间的相对加速动作加以完成。这是藉由简单地在相反于扫描的方向中，建立流体动作加以完成。微通道喷嘴416也作为一缓冲器，以对抗于光学件与流体间的惯性剪切力。
另外，外壳103包含一***，用以供给气体以由晶片101移除过量的液体。外壳103包含一供给侧环带406A，用以气体由气体供给***(未示于图4中)流动；一气封410A，其桥接至晶片101的距离并完成一“刮板”，以包含及移除过量液体，及一回来侧气体流出环带405A(过量液体经由该处加以移除)。过量液体可以经由送回侧气体流出环带405A与排出气体加以移除。一类似结构可以在外壳103的相对四分之一中找出，如图4的左侧所示。气体供给***配合液体供给***动作，只有液体流出现时，当有液体流动于通光孔径区216时，随后，气体供给***需要被用上。
于图4中，应注意，晶片由左向右移动时，液体流是在通道105A“内”，及在通道105B“外”。当扫描方向逆转时，液体流也逆转。
图5显示图4的微喷嘴结构区的部份等角图。通道105A-105D(未示于图5中)是连接至外管507A-507D，液体是经由这些外管加以供给。同样地，虽然未示于图中，但环带405、406也可以连接至管状气体联结管。
图6为可以用于本发明的液体排出速度分布例。可以为本领域技术人员所知，一“自然”速度分布是随着图4的高度为不均匀，而是具有一垂直梯度，这可能造成光学失真。为了补偿此自然梯度，可以使用不同长度的管(微喷嘴416)，如图6所示。于图6中，微通道长度范围由最大值L1至一最小值L2，造成显示在图6左侧所示的微喷嘴416的出口处的速度分布。微喷嘴416愈长，则由特定喷嘴的液体输出速度愈低。再者，如果需要对速度分布作进一步控制，则微喷嘴416本身可能具有不同直径。注意，为了更进一步控制速度分布，微喷嘴416的管并不必然平行于晶片101。
在典型***中的晶片101上的液体高度大约100微米。由于较大高度造成需要控制较大量的速度分布，所以会造成需要更多微喷嘴416A。
因此，小心选择微喷嘴416的长度、直径及方向，在晶片101的通光孔径区216中的速度分布可以被控制，而造成在整个通光孔径区216区的相当均匀的速度分布，藉以改良曝光品质。本质上，由例如图6所示的结构所产生的速度分布可以“相反”于“自然”分布。因此，微喷嘴416的特性被调整，以造成实质均匀速度分布。
于扫描时，当液体再循环并注入于一方向时，晶片101移动于一相反方向。本发明的作用是中和化为扫描动作所造成的液体速度分布，造成在透镜102及液体间的惯性阻尼。换句话说，净作用为“零”净惯性及速度分布与动作无关。取决于液体流的方向，可以完成剪切力的降低或免除，或者是光学失真的降低。因此，浸入式光刻制程能执行由于定流体更新在峰值位准，避免了气泡、及缓冲了光流体振动。
注意虽然于充填室215中的液体可能具有涡流及气泡，但在其行经漫射屏412时，其流量为均匀。因此，在通过漫射屏412、充填室414及离开微喷嘴416后，液体流具有一想要速度分布，而不会有由条纹、光流体振动、涡流、气泡、及其它不均匀所造成的缺陷，因而改良了影像品质。
如上所述，透镜102的底面108并不必为平坦。也可能使用具有曲面底部表面108的透镜102，用以补偿适当安排微喷嘴长度、直径及方向之造成的速度分布不均匀，以完成一接近均匀速度分布。
微喷嘴416也可以使用传统光刻技术于硅材料上加以建构。于显微镜规格上，微喷嘴416组合由管构成的螺巢材料，这些管是以交错方式堆栈，以展现液压直径及长度的主要特征规格。微喷嘴416也可以具有扩大口，进入通光孔径区216中。
微喷嘴416的典型管形直径可以变化，例如由几微米到几十微米(例如5至50微米)，在部份例子中，于直径多至5mm，及长度于约10至100直径。也可以使用其它长度及/或直径。圆喷嘴外的狭缝也可以使用。每单位面积的微喷嘴的数量也可以变化。
对于193nm成像，液体较佳为水(例如去离子水)，但其它液体，例如环辛烷、Krypton(Fomblin石油)及过氟聚醚油也可以使用。
本发明对于一液体浸入式光刻***有着若干优点。例如，于一步进及扫描***中，穿透率被改良，因此，有较低的失真。于空气中灰尘微粒不能进入于透镜102及晶片101间的通光孔径区216，因为液体本身并不包含任何灰尘，及液体的出现会对曝光时出现在通光孔径区216中的灰尘的一种阻障。较佳地，液体在晶片101被加载一晶片台后被带入，及在晶片101被卸载前被移除。这最小化灰尘及微粒污染。另外，于晶片交换时，防止液体溢出的方法也有好几种，及本发明并不限定于上述的一种。
为扫描动作所引入的流体速度分布被中和化，造成在透镜102及剪切流体间的惯性阻尼。除了作为惯性阻尼外，微喷嘴416也作用以更新工作流体容积，藉以免除由于光源造成的热梯度所引起的折射失真。微喷嘴416的另一优点为其于容积更新时不利于气泡的形成。同时，这些微喷嘴416的大小防止气泡的形成，气泡的形成损及了很多传统更新技术。所有这些优点允许使用现行光刻工具及波长，以在一半导体表面上，定义更小的特性。
结论
虽然本发明的各种实施例已经说明如上，但应了解的是，这些是作为例示，而不是限定用。可以为本领域技术人员所了解，各种于形式及细节上的变化可以在不脱离本发明的精神及范围下加以完成。
本发明已经在功能方块图及方法步骤的协助下，例示了其特定功能及关系。这些方块图及方法步骤的边界已经任意定义。其它边界也可以定义，只要其特定功能及关系被适当地执行。同时，方法步骤的顺序也可以再排列。这些替代边界也在本发明的精神及范围内。本领域技术人员可以了解，这些方块图可以由分立组件、客户指定集成电路、处理机执行适当软件等等或其组合。因此，本发明的范围应不为上述例示实施例所限定，应依据以下的权利要求书及其等效加以定义。

Claims (20)

1.一种***，包括：
投影光学***，被配置成采用形成有图案的辐射束对基底曝光，其中基底和投影光学***被配置成沿着扫描方向的轴彼此相对移动；以及
喷头，包括与所述轴平行并且彼此平行的多个通道，所述喷头位于投影光学***和基底之间，并被配置成在投影光学***和基底的局部区域之间的空间中提供浸入液体，形成有图案的束通过所述浸入液体而投射。
2.根据权利要求1的***，其中所述通道包括各个长度变化的管。
3.根据权利要求2的***，其中所述长度变化的管提供对不均匀进行补偿的速度分布。
4.根据权利要求1的***，其中所述投影光学***包括外壳，以及外壳和基底之间的气封。
5.根据权利要求4的***，其中所述外壳包括多个通道，通过所述多个通道在基底处维持负压以去除残留液体。
6.根据权利要求1的***，其中所述喷头具有直径在大约5微米至5毫米之间的微喷嘴。
7.根据权利要求6的***，其中至少一些微喷嘴包括扩大口部分，进入曝光区域中。
8.根据权利要求6的***，其中所述微喷嘴为狭缝形。
9.根据权利要求2的***，其中长度变化范围为相应的管直径的大约10倍至100倍之间。
10.一种液体浸入式光刻***，包括：
投影光学***，被配置成对基底曝光，其中所述基底和所述投影光学***沿扫描方向的轴彼此相对移动；以及
液体供给***，在投影光学***和基底之间提供液体流动，液体流动的方向可调节，
其中所述液体供给***包括形成微通道的多个微喷嘴，每一个微通道与基底平行并且彼此平行，被安排在投影光学***的***，并被配置成在基底和投影光学***之间提供实质上均匀的液体流动的流体速度分布。
11.根据权利要求10的液体浸入式光刻***，其中所述微通道包括长度变化的多个相应的管。
12.根据权利要求10的液体浸入式光刻***，其中每个通道被配置成独立地控制通过各自通道的流动速率，使得通道一起产生可控制的流体速度分布。
13.一种对基底曝光的方法，包括：
使用投影光学***对基底曝光，使得基底和投影光学***沿扫描方向的轴彼此相对移动；
使用包括多个通道的喷头，在投影光学***和基底之间输送液体流，使得每一个通道独立地控制通过各自通道的流动速率，并且通道在投影光学***和基底之间一起产生可控制的流体速度分布；以及
维持液体流动的实质均匀的流体速度分布。
14.根据权利要求13的方法，还包括使用气体供给***从基底去除过量液体的步骤。
15.根据权利要求13的方法，还包括逆转液体流动方向的步骤。
16.一种***，包括：
投影光学***，被配置成对基底曝光，其中基底和投影光学***被配置成沿着扫描方向的轴彼此相对移动；以及
喷头，包括与所述轴平行并且彼此平行的多个通道，所述喷头位于投影光学***和基底之间，以及
液体供给***，包括：
输入通道，被配置成向第一充填室中输送液体；以及
第一漫射屏，液体可通过该第一漫射屏流入第二充填室中，
其中液体通过喷头流入曝光区域中。
17.根据权利要求16的***，其中所述液体供给***还包括：
包括与所述喷头的多个通道相对应的多个通道的额外的喷头，该额外的喷头被配置成从曝光区域向第三充填室中去除液体；
第二漫射屏，液体可通过该第二漫射屏流入第四充填室；以及
输出通道，液体可通过该输出通道在曝光区域外循环。
18.一种液体浸入式光刻***，包括：
投影光学***，被配置成对基底曝光，其中所述基底和所述投影光学***被配置成沿扫描方向的轴彼此相对移动；以及
喷头，包括与所述轴平行并且彼此平行的多个通道，喷头位于投影光学***和基底之间，其中从所述喷头喷出的液体的流动方向是可逆转的。
19.根据权利要求18的液体浸入式光刻***，其中通过改变多个通道的空间方向，可控制液体流动的速度分布。
20.根据权利要求19的液体浸入式光刻***，其中每个通道被配置成独立地控制通过各自通道的流动速率，使得通道一起产生可控制的流体速度分布。
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