TWI272691B - SOI substrates, semiconductor substrate, and method for production thereof - Google Patents
SOI substrates, semiconductor substrate, and method for production thereof Download PDFInfo
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- TWI272691B TWI272691B TW093116911A TW93116911A TWI272691B TW I272691 B TWI272691 B TW I272691B TW 093116911 A TW093116911 A TW 093116911A TW 93116911 A TW93116911 A TW 93116911A TW I272691 B TWI272691 B TW I272691B
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- semiconductor substrate
- substrate
- oxygen
- protective film
- forming
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 34
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 32
- -1 oxygen ions Chemical class 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 230000001681 protective effect Effects 0.000 claims abstract description 17
- 238000005468 ion implantation Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims abstract description 5
- 238000002513 implantation Methods 0.000 claims abstract description 5
- 239000012212 insulator Substances 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims 1
- 239000011800 void material Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 238000000926 separation method Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000007943 implant Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- NPHULPIAPWNOOH-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(2,3-dihydroindol-1-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCC2=CC=CC=C12 NPHULPIAPWNOOH-UHFFFAOYSA-N 0.000 description 1
- HVTQDSGGHBWVTR-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-phenylmethoxypyrazol-1-yl]-1-morpholin-4-ylethanone Chemical compound C(C1=CC=CC=C1)OC1=NN(C=C1C=1C=NC(=NC=1)NC1CC2=CC=CC=C2C1)CC(=O)N1CCOCC1 HVTQDSGGHBWVTR-UHFFFAOYSA-N 0.000 description 1
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- VXZBYIWNGKSFOJ-UHFFFAOYSA-N 2-[4-[5-(2,3-dihydro-1H-inden-2-ylamino)pyrazin-2-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC=1N=CC(=NC=1)C=1C=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2 VXZBYIWNGKSFOJ-UHFFFAOYSA-N 0.000 description 1
- WTFUTSCZYYCBAY-SXBRIOAWSA-N 6-[(E)-C-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-N-hydroxycarbonimidoyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C/C(=N/O)/C1=CC2=C(NC(O2)=O)C=C1 WTFUTSCZYYCBAY-SXBRIOAWSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 241000361919 Metaphire sieboldi Species 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- IGJWHVUMEJASKV-UHFFFAOYSA-N chloronium Chemical compound [ClH2+] IGJWHVUMEJASKV-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000002757 inflammatory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Element Separation (AREA)
Description
1272691 五、發明說明α) 一、【發明=屬之技術領域】 在此之如,藉SIM〇x法製造一部 SIM〇X級離子植入器之結構,通常由於一普通 注入屏蔽之透空部分。 "固疋方向將氧離子 本質上’此項技術旨在··(〗)透 膜2内形成之透空部分3,藉將氧離子植法於保護薄 埋式氧化物薄膜5之形成,(2)將接二= f面完成掩 之清洗處理,及(3)於高溫下在其上加^之基^施以規定 專利文獻1及專利文獻2)。 只e”,、處理(請參閱 二、【先前技術】 在該等專利文獻1及2中,曾介 面編相對夾角約7度之理:。二方角向 該掩埋式氧化物薄膜之邊料以曝光(nu 專利文獻3)。所稱用以解釋此現象之理由是閱專如 =因^透空部分之部分未藉保護薄膜徹底屏蔽離子而 避免地將氧離子植入該基片之表面,當熱處理形成掩 埋式氧化物薄膜時,該掩埋式氧化物薄膜終於在表面曝光 。因在用氫氟酸清洗表面以移除氧化物薄膜之後續步驟内 ,該曝光部分不可避免地形成凹痕或孔穴,以致:(丨)因 務必需要納入一裝置_隔離結構而妨礙電路設計及(2 )因化 學機械拋光步驟内產生過多漿液造成加工方面之問題。 專利文獻2及專利文獻3曾建議若干措施以解決該等問
$ 6頁 1272691
五、發明說明(2) 題。但,該等措施不易於用在 專利文獻2内建議之垂直 入際商業生產上。 低該BOX之品質,蓋因| #罝植入法干涉到β〇Χ之形成並降 部。如專利文獻3内;片之:佈中通道會產生-尾 實施之各向異性蝕刻作;^表面法線成7到1 0度傾角 旋加速器共振法採用導致蓋因即使該電子回 與基片間電位差之斤理及:=基片表面方向發生電聚 =心=保方向特性。利用氮化物薄膜之方法,其 工作步驟數量增加、工作時間延長,…成本 體區 未致 路圖 減低 報 公報 公報 =所建4之部分矽絕緣體在矽絕緣體區與非矽絕緣 二必兩增加一個步驟。既未提出解決困惑之措施亦 澄清現存問題。可包容之步驟則視預期積體電路電 1之尺寸。雖稱大概不超過20 0奈米,但容許幅 趨勢。 巧 [專利文獻1 ] 日本專利JP-A-08-0 1 7694之正式公 [專利文獻2] 日本專利JP-A-20 0 1 -3 080 25之正式 [專利文獻3] 日本專利JP-A-20 (Π-30 81 72之正式 三、【發明内容】 八本發明之内容係··一種具有一由SIM0X(藉植入氧實施 分離)技術所製SOI (矽絕緣體)結構元件及一裝在其上面如
第7頁 1272691 五、發明說明(3) 同整合在一起之主體結構元件之部分SOI基片及一種用以 製造部分SOI基片之方法。 本發明之另一内容係一種用以製造前述矽絕緣體基片 之方法,該方法將所形成之氧化石夕薄膜作為保護薄膜2。 四、【實施方式】 么至目别為止’利用植入氧分離(SIΜ 0 X)技術製造部 分石夕絕緣體基片時,普通方法必然使Β〇χ(掩埋式氧化物薄 層)曝光且所建議之若干解決問題之措施在付諸具體商業 利用時必然遭到困難。本發明旨在提供··(丨)一種方法, 該方法可藉商業化及低成本之植入氧分離(SIM0X)技術製 ^掩埋式氧化物薄膜不曝光之完美部分矽絕緣體結構及 (2\—種由該方法製得之矽絕緣體基片。再者,本發明旨 ,提供·( 1 ) 一種製造方法,該方法可避免矽絕緣體區盥 :巧絕緣體區 < 間發生問㉟及(2) — ·由 絕緣體基片。 / 導_ I I 從硬式乳化初潯膜之矽單晶體製成之半 ί 絕緣f基片可達成上述目的,其特ί 氧化物i胺 里式乳化物溥膜之矽絕緣體區與無掩埋式 二化物涛膜之非⑪絕緣體區間之表面高度差*超過2〇〇奈 該製迕方去::種製::所製矽絕緣體基片達成, 成;:於一矽皁:體製半導體基片之表面上形 形成Ϊίί 子植蔽之步冑,於該保護薄膜内 $成規疋圖型透空部分之梦驟 :
1272691 五、發明說明(4) 方向將氧離子植入該半導體美 體基片施以熱處理,俾在該步驟,及對該半導 膜之矽絕緣體區盥鉦掩埋式毫ff.具有掩埋式氧化物薄 /、…、。掩埋式虱化物薄膜之非矽絕緣體區間 之表面冋度差不超過2〇〇奈米。 二系由:種用以製造石夕絕緣體基片之方法達成 一S護薄i作我ί二石夕早晶體製半導體基片之表面上形成 招、二阁、’、’、 植入屏蔽之步驟,於該保護薄膜内形 向將氧離子植入該半導體L 2垂ί於半導體基片之方 干命篮暴片表面之步驟,及對該半導體 基片施以熱處理,俾在該半導體基片内形成一掩埋式薄膜 之步驟’該矽I巴緣體基片之特徵為·· I有掩埋式氧化物薄 膜之石夕絕緣體區與無掩埋丨氧化物、薄膜之非石夕絕緣體區之 表面高度差不超過2GG奈米,其特徵為··在將氧離子植入 該半導體基片表面之步驟内,引起增添至少兩個由氧離子 植入流之投影與基片主體之特定方位所形成之夾角。 藉助於本發明,如以上所述,可獲得:(1)一種方法 ,該方法係用商業化及低成本之植入氧化物分離技術製造 一避免透過表面曝光掩埋式氧化物薄膜之完美部分矽絕緣 體結構,及(2 )用該方法所製之石夕絕緣體基片。 茲參恥附圖將具體實施本發明之模式加以詳細說明。 但本發明之適用範圍並不以此為限。 此處,第1(A)、(B)、(c)及(D)圖係用以示本發明矽 絕緣體基片製造方法實驗例之流程圖。下列說明中將假設
第9頁 1272691 五、發明說明(5) 使用一熱氧化物薄膜作為保護薄膜。 參照第1 ( A )圖,
斗f定作為離子植入屏蔽之氧化物薄膜(保護薄膜2)係 藉熱氧化作用形成於由矽單晶體所製半導體基片1之表面 上〃。之後,如第1(B)圖所示,具有一特定圖型之透空部八 3係^用印型法形成在保護薄膜2内。再者,如第丨(c)圖所示 ,氧離子4係沿非垂直於半導體基片表面之方向植入半導 ,,片1之表面,如第1(D)圖所示,藉將半導體基片丨施以 …处理,則於半導體基片1内形成一掩埋式氧化物薄膜5。 此時,透空部分3最好藉各向異性蝕屏 使其末端部分以逐漸接近基片垂線之夾角而形成鸟屏蔽 ^,緣體基片係藉植入氧分離技術由一種方法 =為二電(= 成-古、.曲Λ電子伏特以植入氧離子直至於規定深度處形 和氣二:又巩離子植入層,(2)在13 50 °C退火溫度下,於 ί濃Li:;二氬氣環境中將該薄膜退火4小時。並於 氧分離二Ϊ 下將其進一步退火4小時。但,植入 =J片之製造條件無需特別局限於此。
=丄所形成者)係^夕或石夕鍺半導體基片。 與植入離,如第HA)及(β)圖所示,將基片方法[110] Ο及点條=平:上之投影Ο所形成之夾“變 部分之末她^ 夾角,精助於保護薄膜可將屏蔽内透空 部分之離子屏蔽作用加以均句化。 之另一目的係提供一種用以製造前述矽絕緣體
第10頁 1272691
基片之適當方法,抱+ u 職咖俾在植入氧離子至半導體基片表面之步 植入氧離子产在其T i屏蔽將植入工作分成許多循環,且 π Α Θ二ί基片平面上之投影與基片主體特定方位所 7成之夾角ik各個分離之循環有所差異。 工作id:! ΐ述夾角φ不能自由設定’藉將植入 乍刀成卉夕循裱程序並改變每個分離循環之夾角 =於保護溥膜可將屏蔽内透空部分之末端部分‘ 作用加以均勻化。 τ听敝 本發明之另_目的係提供一種用以製造前述石夕絕緣體 =片之適當方法,俾在用前述保護薄膜作為屏蔽以植入氧 、、子4至前述半導體基片表面上之步驟内,由氧離子植入 机42與岫述基片主體之法線了所形成之夾角不低於1 〇 , 尤以11至1 6度更佳。 若植入氧離子4之流動體42與前述基片主體丨表面之法 $所形成之夾角θ(參閱第2圖)不低於10度,掩埋式氧化物 薄膜曝光之抑制作用較該角低於丨〇度時更為有效。 藉助於離子植入及熱處理作用(可防止掩埋層或孔穴 之曝光),本發明之以上說明可應用於掩埋絕緣薄膜、掩 埋孔穴或掩埋矽化合物(例如:S丨c或s “ )。 再者,本發明之另一目的係提供一種用以製造前述石夕 絕緣體基片之方法,俾前述熱處理步驟採納一適當熱處理 步驟所用溫度不超過1 2 5 0 °C,但以不超過1 3 0 〇 °c較佳,尤 以不超過1 32 5 °C更佳,其氧流率不超過5%,尤以不超過 20%更佳’歷時不超過1〇分鐘,尤以不超過3〇分鐘更佳。
1272691
將此熱處理步驟併入該方法中, 體兩區間之表面高度差。 w ’肖除石夕絕緣體/本 雖然僅要求該保護薄膜能阻攔氧離子 在更廣泛之條件下實施;絕:體 因此,本發明提供一種用上述方 ^ 2 ’其特徵為:掩埋式氧化物薄膜不會體基 光且矽絕緣體/本體兩區間之表面古 匕土片表面而曝 [實驗例] 衣面同度差不超過200奈米。 茲參考諸實驗例將本發明加以詳細說明。 實驗例1至1 7及比較例1至5 依照左科拉斯基法、藉生長一摻硼單晶矽製得一 | 棺面作為基片主表面及直徑為200公厘之晶圓。實施氧 離子植入之條件是:基片溫度為550ct,加速電壓為18 電子伏特,植入氧離子總劑量為4>< 101T個原子/平方公0八 ^本發明之實驗例中,植入工作係分作四個循環,每個刀 裱之劑量為1 X 1 〇π個原子/平方公分。每個晶圓外周沿 <、11 〇>方向所含切口係用以指示方位。每個分離循環植入 /”L體之投影與< 1 1 〇〉方向間所形成之夾角ρ每個循環旋轉 9^0度。在每個植入工作分離循環過程中夾角p係固定者。 母個植入工作分離循環内基片表面法線與植入流體間所形 成之炎角<9係固定在1 5度。部分矽絕緣體係依照上述程序 ’於1 0至1 6度範圍内,每次將夹角0改變1度而製得。分 別地’藉將植入工作分成兩個循環及每個分離循環内在
第12頁 1272691
1 80度範圍内改變夾角θ及將 分離循環内在120度範圍内改総工为成二個循環及每個 體。作為比較例,植人工作^角,以製得-部分石夕絕緣 其中包含在植入工作排除採.用以1所示之條件實施, 一熱處理爐内並在下列兩種條 ^ :該等晶圓置入 條件A :溫度135(rc,氯ϋ内施以熱處理。 時。 衣兄+〇· 5/°氧,加熱時間四小 條件Β 時,隨後施 + 7 0 %氧,加 用氫氟 除並利用一 緣體部分掩 未發現太大 樣,矽表面 米,經發現 式氧化物層 :溫度1 3 5 0 〇C ,顏援ρ丄n e 〇/ β 虱衣境+ 0· 5%氧,加熱時間四々 …處理,所用條件為:溫度135〇,
熱時間三小時。 ^ ^ ^ 酸將所製部分矽絕緣體晶圓之表面氧化物層教 光譜橢圓(偏振)測量法以測試表面矽層及發續 埋式氣化物層之厚度。結果,在該等試樣中益 差異。視熱處理條件而定,經發現條件A之試 尽度為340奈米及掩埋式氧化物層厚度為μ奈 條件B之試樣,矽層表面厚度為175奈米及掩埋 厚度為1 0 5奈米。
之後’利用一原子力顯微鏡(A F Μ )可看出石夕絕緣體/本 體之界面。所觀察到之結果經彙整如表1所示。由矽絕緣 體/本體界面掩埋式氧化物之曝光情形評定試樣之等級。 結果等級之評定採三級制:S表示完全未觀察到,Ρ表示部 分觀察到,及F表示整個界面曝光。
第13頁 1272691 五、發明說明(9) [表1]
分割數目 夾角0 保護薄膜 矽絕緣體/本體 界面 實驗例1 4 15 Si02 S 實驗例2 4 15 Si3N4 S 實驗例3 3 15 Si02 S 實驗例4 3 15 Si3N4 S 實驗例5 2 15 Si02 S 比較例1 15 Si02 F 實驗例6 4 16 Si02 S 實驗例7 4 16 Si3N4 S 實驗例8 4 14 Si02 S 實驗例9 4 14 Si3N4 S 實驗例10 4 13 Si02 S 實驗例11 4 13 Si3N4 P 實驗例12 4 12 Si02 S 實驗例13 4 12 Si3N4 P 實驗例14 4 11 Si02 S 實驗例15 4 11 Si3N4 F 實驗例16 4 10 Si02 S 實驗例17 4 10 Si3N4 F 比較例2 4 9 Si02 F 比較例3 4 9 Si3N4 F 比較例4 4 8 Si02 F 比較例5 4 8 Si3N4 F ΙΙϋΗ 第14頁 1272691 五、發明說明(ίο) 若熱處理加工所採熱處理步驟之實施條件是··溫度不 超過1 2 5 0 °C,熱處理過程中氧流率不超過5%,熱處理時間 不低於1 0分鐘,若不採用上述步驟矽絕緣體/本體兩區間 所發生之表面高度差則予以消除。(附帶地,第3圖示一流 率-處理溫度相圖。)在空心圓(〇 )所指示之每個點,觀察 到超過2 0 0奈米之表面高度差及在實心圓(·)所指示之每 個點未觀察到超過200奈米之表面高度差。
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Claims (1)
127¾^^ (bR 六、申請專利範圍 • 種用以製造石夕絕緣體基片之方法,該製造方法包括 •於石夕單晶體製半導體基片(1 )之表面上形成一保護薄 膜(2 )作為離子植入屏蔽(光罩)之步驟,於該保護薄膜(2 )
内形成規定圖型(案)透空部分(3 )之步驟,沿非垂直於半 導體基片之方向將氧離子(4)植入該半導體基片表面 (8)之步驟,其中在植入氧離子(4)之流動體以”之投影 (41)與基片(1)主體之特定方位(11〇)之間形成至少兩個夾 角(Φ _),及一個熱處理該半導體基片(1)之步驟,由此在該 半導體基片(1)内形成一掩埋式氧化物薄膜(5),該熱處理 之ν,之特彳玫為包括一熱處理之步驟,所用之溫度不低於 1 2 5 0 C ’氧之流速不低於5 %,及期間不少於丨〇分鐘。 2 ·>如申請專利範圍第1項之方法,其中在將氧離子(4 )植 入4半導體基片(1)表面(8)之步驟内,用該保護薄膜(2) ^為屏,實施植入作用時係分成許多循環,所分成之諸循 J哀間’氧離子植入流(42)在基片平面上之投影(41)與基片 主體特定方位(1 1 0 )所形成之夾角有所差異。 3 ·如申請專利範圍第1或2項之方法,其中在將氧離子
(^)植入邊半導體基片(1 )表面(8 )上之步驟内,用該保護 雜f(2)作為屏蔽,氧離子植入流動體(42)與該基片(1)主 /面(8)>之法線(7)之間所形成之夾角(0 )小於1〇度。 $如申請專利範圍第1或2項之方法,其中形成一氧化矽 溥膜作為該保護薄膜(2)。
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JPH08176694A (ja) | 1994-12-21 | 1996-07-09 | Mitsubishi Materials Corp | 半導体装置のヒートシンク用薄肉焼結板材の製造法 |
JP3288554B2 (ja) * | 1995-05-29 | 2002-06-04 | 株式会社日立製作所 | イオン注入装置及びイオン注入方法 |
JPH1197377A (ja) * | 1997-09-24 | 1999-04-09 | Nec Corp | Soi基板の製造方法 |
AU2993600A (en) | 1999-02-12 | 2000-08-29 | Ibis Technology Corporation | Patterned silicon-on-insulator devices |
EP1264339B1 (en) | 2000-03-10 | 2010-05-19 | Nippon Steel Corporation | Method for production of simox substrate |
JP2001308025A (ja) * | 2000-04-21 | 2001-11-02 | Mitsubishi Materials Silicon Corp | Soi基板の製造方法 |
US6548369B1 (en) * | 2001-03-20 | 2003-04-15 | Advanced Micro Devices, Inc. | Multi-thickness silicon films on a single semiconductor-on-insulator (SOI) chip using simox |
JP2002289552A (ja) * | 2001-03-28 | 2002-10-04 | Nippon Steel Corp | Simox基板の製造方法およびsimox基板 |
US7112509B2 (en) * | 2003-05-09 | 2006-09-26 | Ibis Technology Corporation | Method of producing a high resistivity SIMOX silicon substrate |
-
2003
- 2003-09-25 JP JP2003333908A patent/JP4790211B2/ja not_active Expired - Fee Related
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2004
- 2004-06-02 US US10/858,646 patent/US7320925B2/en not_active Expired - Fee Related
- 2004-06-03 DE DE602004008537T patent/DE602004008537T2/de not_active Expired - Lifetime
- 2004-06-03 EP EP04013119A patent/EP1487010B1/en not_active Expired - Fee Related
- 2004-06-09 KR KR1020040042265A patent/KR100593373B1/ko not_active IP Right Cessation
- 2004-06-11 TW TW093116911A patent/TWI272691B/zh not_active IP Right Cessation
- 2004-06-14 CN CNB2004100489211A patent/CN1315175C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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EP1487010A2 (en) | 2004-12-15 |
CN1585106A (zh) | 2005-02-23 |
EP1487010A3 (en) | 2005-03-16 |
DE602004008537D1 (de) | 2007-10-11 |
US7320925B2 (en) | 2008-01-22 |
JP4790211B2 (ja) | 2011-10-12 |
EP1487010B1 (en) | 2007-08-29 |
TW200504925A (en) | 2005-02-01 |
DE602004008537T2 (de) | 2007-12-27 |
CN1315175C (zh) | 2007-05-09 |
JP2005026644A (ja) | 2005-01-27 |
KR100593373B1 (ko) | 2006-06-28 |
US20040253793A1 (en) | 2004-12-16 |
KR20040107377A (ko) | 2004-12-20 |
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