TWI223439B - Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them - Google Patents

Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them Download PDF

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Publication number
TWI223439B
TWI223439B TW091116370A TW91116370A TWI223439B TW I223439 B TWI223439 B TW I223439B TW 091116370 A TW091116370 A TW 091116370A TW 91116370 A TW91116370 A TW 91116370A TW I223439 B TWI223439 B TW I223439B
Authority
TW
Taiwan
Prior art keywords
trench
layer
contact area
capacitor electrode
insulating layer
Prior art date
Application number
TW091116370A
Other languages
English (en)
Chinese (zh)
Inventor
Albert Birner
Matthias Goldbach
Till Schloesser
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of TWI223439B publication Critical patent/TWI223439B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Jib Cranes (AREA)
TW091116370A 2001-08-14 2002-07-23 Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them TWI223439B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10139827A DE10139827A1 (de) 2001-08-14 2001-08-14 Speicherzelle mit Grabenkondensator und vertikalem Auswahltransistor und einem zwischen diesen geformten ringförmigen Kontaktierungsbereich

Publications (1)

Publication Number Publication Date
TWI223439B true TWI223439B (en) 2004-11-01

Family

ID=7695362

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091116370A TWI223439B (en) 2001-08-14 2002-07-23 Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them

Country Status (7)

Country Link
US (2) US20040104192A1 (de)
EP (1) EP1417707A2 (de)
JP (1) JP4050230B2 (de)
KR (1) KR100613927B1 (de)
DE (1) DE10139827A1 (de)
TW (1) TWI223439B (de)
WO (1) WO2003017331A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793835B (zh) * 2021-07-30 2023-02-21 南亞科技股份有限公司 具有垂直場效電晶體的記憶體元件及其製備方法

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309080B2 (en) * 2003-07-24 2007-12-18 Mein Gary W Extendable arm for a motor vehicle
KR100532509B1 (ko) * 2004-03-26 2005-11-30 삼성전자주식회사 ＳｉＧｅ를 이용한 트렌치 커패시터 및 그 형성방법
US7547945B2 (en) 2004-09-01 2009-06-16 Micron Technology, Inc. Transistor devices, transistor structures and semiconductor constructions
US7384849B2 (en) 2005-03-25 2008-06-10 Micron Technology, Inc. Methods of forming recessed access devices associated with semiconductor constructions
US7282401B2 (en) 2005-07-08 2007-10-16 Micron Technology, Inc. Method and apparatus for a self-aligned recessed access device (RAD) transistor gate
US7867851B2 (en) 2005-08-30 2011-01-11 Micron Technology, Inc. Methods of forming field effect transistors on substrates
US7700441B2 (en) 2006-02-02 2010-04-20 Micron Technology, Inc. Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array, and methods of forming integrated circuitry comprising a transistor gate array including first gates and second grounded isolation gates
US7602001B2 (en) 2006-07-17 2009-10-13 Micron Technology, Inc. Capacitorless one transistor DRAM cell, integrated circuitry comprising an array of capacitorless one transistor DRAM cells, and method of forming lines of capacitorless one transistor DRAM cells
US7772632B2 (en) 2006-08-21 2010-08-10 Micron Technology, Inc. Memory arrays and methods of fabricating memory arrays
US7589995B2 (en) 2006-09-07 2009-09-15 Micron Technology, Inc. One-transistor memory cell with bias gate
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US8072345B2 (en) * 2008-02-14 2011-12-06 Darren Gallo Electronic flare system and apparatus
DE502008002947D1 (de) * 2008-06-13 2011-05-05 Bauer Maschinen Gmbh Bauarbeitsgerät mit ausfahrbarem Mast und Verfahren zum Betrieb eines solchen Bauarbeitsgerätes
JP5248952B2 (ja) * 2008-08-29 2013-07-31 株式会社タダノ ジブ付きクレーン車のジブ格納装置
US8187938B2 (en) * 2009-04-13 2012-05-29 Hynix Semiconductor Inc. Non-volatile memory device and method for fabricating the same
US9815674B2 (en) * 2013-02-21 2017-11-14 Manitowoc Crane Companies, Llc Pin puller for crane connections
KR102154075B1 (ko) * 2013-10-21 2020-09-09 삼성전자주식회사 반도체 소자의 검사 방법 및 반도체 검사 시스템
DE202017101042U1 (de) 2017-02-24 2017-03-24 Manitowoc Crane Group France Sas Verbolzungseinheit
US10589966B2 (en) 2017-03-02 2020-03-17 Manitowoc Crane Companies, Llc Jib coupling system for jib stowage
EP3635782B1 (de) * 2017-05-08 2021-03-24 Micron Technology, Inc. Speicherarrays
EP3859780A1 (de) 2017-05-08 2021-08-04 Micron Technology, Inc. Speicherarrays
US11043499B2 (en) 2017-07-27 2021-06-22 Micron Technology, Inc. Memory arrays comprising memory cells
US10181472B1 (en) * 2017-10-26 2019-01-15 Nanya Technology Corporation Memory cell with vertical transistor
CN108167002A (zh) * 2018-01-31 2018-06-15 湖南五新隧道智能装备股份有限公司 一种用于拱架施工作业的伸缩臂组
CN110246841B (zh) * 2018-03-08 2021-03-23 联华电子股份有限公司 半导体元件及其制作方法
US10950618B2 (en) 2018-11-29 2021-03-16 Micron Technology, Inc. Memory arrays

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1746109A (en) * 1929-03-21 1930-02-04 Edwards Lowi Lifeboat-handling mechanism
DE1709504A1 (de) * 1966-02-26 1976-05-13 Wieger Teleskopbagger mit um seine laengsachse drehbarem ausleger
FR1601845A (de) * 1968-12-30 1970-09-14
US3863407A (en) * 1971-02-13 1975-02-04 Gottwald Kg Leo Telescopic crane jib
US3842985A (en) * 1972-12-15 1974-10-22 Harnischfeger Corp Means for extending and retracting crane boom section
US3840128A (en) * 1973-07-09 1974-10-08 N Swoboda Racking arm for pipe sections, drill collars, riser pipe, and the like used in well drilling operations
US5641694A (en) * 1994-12-22 1997-06-24 International Business Machines Corporation Method of fabricating vertical epitaxial SOI transistor
US5743149A (en) * 1996-02-26 1998-04-28 Skyjack Equipment Inc. Articulated telescopic boom having slide-through knuckle
US6383864B2 (en) * 1997-09-30 2002-05-07 Siemens Aktiengesellschaft Memory cell for dynamic random access memory (DRAM)
CN1213182A (zh) 1997-09-30 1999-04-07 西门子公司 用于动态随机存取存储器的存储单元
US6137128A (en) * 1998-06-09 2000-10-24 International Business Machines Corporation Self-isolated and self-aligned 4F-square vertical fet-trench dram cells
DE19844997A1 (de) * 1998-09-30 2000-04-13 Siemens Ag Vertikaler Feldeffekttransistor mit innenliegendem Gate und Herstellverfahren
US6144054A (en) * 1998-12-04 2000-11-07 International Business Machines Corporation DRAM cell having an annular signal transfer region
DE19942012A1 (de) 1999-03-02 2000-09-28 Muesing Anton Gmbh Co Kg Verfahren und Vorrichtung zur Beseitigung von Treibselgut aus dem Bereich eines Deiches
US6262448B1 (en) * 1999-04-30 2001-07-17 Infineon Technologies North America Corp. Memory cell having trench capacitor and vertical, dual-gated transistor
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6153902A (en) 1999-08-16 2000-11-28 International Business Machines Corporation Vertical DRAM cell with wordline self-aligned to storage trench
DE19944012B4 (de) * 1999-09-14 2007-07-19 Infineon Technologies Ag Grabenkondensator mit Kondensatorelektroden und entsprechendes Herstellungsverfahren
DE19946719A1 (de) 1999-09-29 2001-04-19 Infineon Technologies Ag Grabenkondensator und Verfahren zu seiner Herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793835B (zh) * 2021-07-30 2023-02-21 南亞科技股份有限公司 具有垂直場效電晶體的記憶體元件及其製備方法
US11665881B2 (en) 2021-07-30 2023-05-30 Nanya Technology Corporation Memory device with vertical field effect transistor and method for preparing the same

Also Published As

Publication number Publication date
KR100613927B1 (ko) 2006-08-21
WO2003017331A2 (de) 2003-02-27
WO2003017331A3 (de) 2003-10-09
EP1417707A2 (de) 2004-05-12
KR20040030962A (ko) 2004-04-09
US7268381B2 (en) 2007-09-11
DE10139827A1 (de) 2003-03-13
US20040104192A1 (en) 2004-06-03
JP2004538660A (ja) 2004-12-24
JP4050230B2 (ja) 2008-02-20
US20040232466A1 (en) 2004-11-25

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