TW511199B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW511199B
TW511199B TW090121172A TW90121172A TW511199B TW 511199 B TW511199 B TW 511199B TW 090121172 A TW090121172 A TW 090121172A TW 90121172 A TW90121172 A TW 90121172A TW 511199 B TW511199 B TW 511199B
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Taiwan
Prior art keywords
metal plate
semiconductor device
patent application
scope
item
Prior art date
Application number
TW090121172A
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English (en)
Inventor
Yoshihiro Nakajima
Akira Fukuizumi
Original Assignee
Nec Corp
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Publication of TW511199B publication Critical patent/TW511199B/zh

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Description

五、發明說明（l) 發明領域： 本發明係關於一種半導體裝置，封 閉於一樹脂 -種塑膠封褒；更有關於—種塑膠封褒，其中半導體’曰、， 的電極以及接腳終端係藉由金屬板（例如：片 接。 电庇連 習知技術說明：
具有樹脂封裝，亦即塑膠封裝的半導體裝置，直 括-個半導體晶片（亦稱為peUe“dieV用以形成中周包 邊終端點（例如導線架）的打線材（wiring material )、以及用來密封半導體晶片的模造樹脂，使半導體晶 結合於打線材以及内側導引端（inner leads)。 曰片 上述打線材，舉例來說，可包括一帶具（tape cauier·)或薄膜具（film carrier ) 、_：、印刷電路板、 以及導線架等類似的裝置。模造樹脂主要以環氧樹脂來製 傳統上，是以打線法（Wire b〇nding meth〇d)來連 結半導體晶片的電極和打線材的導引終端。第丨A及丨β圖顯 不典型的、使用打線法的半導體裝置J。第以圖為平面 圖，而第1 B圖為剖面圖，顯示沿第丨A圖之丨-丨，線的剖面。 如第1A與1B圖所示，該半導體裝置1為8腳的s〇p (Small Outline Package );製造方法為設置一半導體 ‘ 晶片10 (該晶片具有一M0SFET )，使之連結導線架2〇、透· 過打線7構成電性連接；再以模造樹脂&包覆。半導體晶片
7061-4293-Pf.ptd $ 6頁 511199 五、發明說明（2) 在上端面1 0具有一閘極丨丨以及三源極丨2，並在下端面（圖 中未顯不）具有一汲極。導線架2〇提供複數導引端，由封 裝的，側伸出，其中有第丨A圖左側的四個汲極導端2丨，以 及在第1A圖右側的一個閘極導端22與三個源極導端㈡。汲 極導端21係一體成形於封裝的内側，藉以形成一島部24 (island part)。閘極導端22在封裝内側具有一内側導 引α卩2 5 (以下稱為閘極終端）。各個源極導端2 3在封裝内 侧都具有内側導引終端部26 (以下稱為源極終端）。半導 體晶片ίο透過晶片連結材料（die bond materiai) g連結 於島部24，其中汲極+ 丁又找I禾圖不）電性連接於島部24。半導 = ί〇Λ端查面：㈣1以及導線架2°的閉極終端25透過 連結線7相互連接。同時，泝搞】9 端26透過連結線7相互連接源架20的源極終 文 干等體晶片1〇、内铜莫她 (包括島部尸、严極終端25、以及源極終端26〕、導以及連 結線7係以模造樹脂8加以密封，形成封^ 上述半導體裝置1係用以說明1雷曰 transistor)，用於大電流，用以降低^日:以 閘極25係與金線或其他可能材料之連社構成'遠'以及 然而，透過打線法，使用如金線；Ϊ主構成連L。 產生若干問題。除了生產成*的大^ /貝的、、、田金屬線會 適合在大電流運作，因為細金屬::加以外，該封裝不 有人提出使用銅等金屬片來彤成φ :有斷裂發生。近來， 開專利第8-1 46623號），其中為一搔的方法（日本公 體。與金屬線相比較，因為可二 用大電流的電力電晶 具有較大的截面積，金屬 511199 五、發明說明（3) 片有減低電阻以及改進熱輻射的功能。 然而，對於半導體晶片電極以及線材導引端以金屬片 相互連接的塑膠封裝而言，仍具有以下的問題。 、首先，以半導體晶片電極以及線材導引端以金屬片相 互連接的塑膠封裝的應用例來加以說明。 第2A與2B圖係顯示以金屬片構成連接的半導體裝置 2。第2A圖為平面圖，而第2B圖為言2A圖中π — π，線岭 面圖。 、如第2人與216圖所示，該半導體裝置2為8腳的SOP ;製 把方法為设置一半導體晶片30 (該晶片具有一M〇SFET )， =連結導線架40、透過打線7以及銅等構成之金屬片5〇 ，成電性連接：再以模造樹脂8包覆。半導體晶片3〇在上 =面具有一閘極31以及具有大面積之單一源極32，並在下 =面圖中未顯示）具有一汲極。導線架4〇提供複數導引 :，由封裝的兩側伸出；其中有第2八圖左側的四個汲極導 :’以及在第2A圖右側的一個閘極導端"與三個源 二：T極〗導？1係一、體成形於封裝的内側，藉以形成- Ξ二公 Ρ3ΓΪ)。閘極導端42在封裝内側且有一 内側導弓I部45。三個個源極導 、 並，、有一见大的的源極終端46。半導！^曰K qn% 、”口 = (dle bond material ) 9連結於島部44，並 (未圖不）電性連接於島部44。半二中才 極31以及導魂牟4〇的κ^等體曰曰片30上端面的閘 f導線木40的閘極終端45透過連 同時，源極32以及導線架40的源極 立連接 4 ％?46透過麵製的金屬
511199 五、發明說明（4) __ 5另0: ί ί。鋼製的金屬片50係一端連結於源極32，並 乂另一鈿透過導電膠6連結於源極4 6， 6 0 ^f|t0aa,3〇 ^ “、閘極終端45、以及源極終端46)、連、:：(、包括島部 製的金屬片50係以模造樹脂8加以密封，形成封以及銅 寸的：Γ，Α二斤示’金屬片50的寬度形成為封裝：。外部尺 電阻便降低了。 此该封裝的 半導體裝置要應付極端的環境，亦 唐、渴；f、以师丄 * 女裝後使用時溫 …、 及壓力的變化。由於半導體 續變化的影響，金屬# M i α ιν e y 體裝置焚到溫度連 、生杰厶麗Η Λ机屬片連結及模造樹脂會產生破P， k成金屬片由树脂分離。如此，水 生破裂 能由分離的部分滲入半導體晶片，而造氣體便可 餘。結果，便降低半導體裝置的可靠卜導體晶片的腐 使用金屬打線時，即使上述脫 生，由於金線的截面積小，其可渗入c的情形發 域相對地狹窄’因此水分與氣體 氣體的區 金屬線與模造樹脂之間。這可以 =入+導體晶片的 低的情形。 +導體裝置可靠度降 然而，由於金屬片的戴面積比 為減低電阻並增進熱轄射，需要有大的、C.大；而 模造樹脂的接點面積被增大，而、生成八- 積’其與 增加·，如此，便減低了半導體裝=的7 = 2氣體渗人區域 被滲入的水分與氣體破壞了。 罪X ’因為可靠度 第9頁 7061-4293-Pf.ptd 再者，即使在一些狀況中，會 :ste)以及樹脂型的導電膠來 用:錫二(_der 二’銲錫膠與樹脂型導電膠有 引端、金屬片的連 的連結區域漏出的情況中，若外=膠由”端與金屬片 散而行至封褒外周的部分，而到達2 ”朝向導引端擴 離。降，樹脂的接合強度，而造成模造樹 A丄；疋水分與氣體會容易由外側、央入半導俨曰y刀 成丰莫辦曰爹八干等體晶片，> =曰1的腐敍，減低半導體H的可靠度。 安萝厶厘Γ好在該半導體晶片之電極以及導引端精密地 女裝一金屬板（metal plate )。 啼谓在地 本發明係考慮上述習知技術的内容而設計。。苴 及導^ t導體裝置（—塑膠封裝），帛導體晶片之電極以 :導引知係電性連接至一金屬。例如銅板，以樹脂封 ^本發明係改良該樹脂的成模而改良該半導體裝置的可 #度’其中係藉由改進金屬板與封裝樹脂的接合性。 再者’本發明係改良導引端以及封裝樹脂間的接合 性’並改良模造樹脂的封裝性而改進半導體裝置的可靠 度’其中係藉由防止用以連接導引端以及金屬板的導電連 結材料（conductive bonding material)擴散至金屬板 以及導引端間的連接區域（b〇nding range )之外，特別 是封裝之導引端的外側。 再者’本發明提供一半導體裝置，其中一金屬板係方 便、並高·精密度地設置於一半導體晶片的電極以及導線架
7061-4293-Pf.ptd 第10頁 511199 五、發明說明（6) (leading frame)的導引端 發明概述： 本發明之第一實 導體晶片’具有複數 一金屬板，連接該複 樹脂，封裝該半導體 屬板，其中該金屬板 透過上述的組成 板與模造樹脂的接合 性（密封性）也被改 本發明之另一實 導體晶片，具有複數 "^金屬板’電性連接 模造樹脂，封裝該半 該金屬板，其中特別 於該模造樹脂。 施例是一 電極；打 數電極以 晶片、部 之 面係 ，由於該 性因此得 良，使得 施例是一 電極；打 該複數電 導體晶片 線#料，具 及複數導引 分之該打線 111可山區而連於 金屬板的表 到改良，而 半導體裝置 種半導體裝 線材料，具 極以及複數 、部分之該 地該金屬板之一面係 有複數導 端；以及 材料、以 該模造樹 面粗糙， 模造樹脂 的可靠度 置，包括 有複數導 導引端； 打線材料 具有渦槽 :一半 引端； 一模造 及該金 月旨〇 該金屬 的封閉 增加。 :一半 引端； 以及一 、以及 ，而連 透過上述的組成，由於該金屬板的表面粗糙，該金屬 板與模造樹脂的接合性因此得到改良，而模造樹脂的封閉 性（密封性）也被改良，使得半導體裝置的可靠度增加。 此外，本發明實施例之另一特性係一半導體裝置，其 中係藉由部分鍍膜於該金屬板而使該金屬板連接於該複數 電極以及該複數導引端，並且該模造樹脂係連接於該金屬 板的材料。 透過上述的組成，連結於該導引端以及該金屬板的導
7061-4293-Pf.ptd 第11頁 子防止流出導腳（leads )的封裝，而該 曰的接合力因此得到改良，而模造樹脂的 也被改良，使得半導體裝置的可靠度增 五、發明說明（7) 電連結材料，可 導腳與模造樹脂 封閉性（密封性 加。 本發明之另 導體晶片，具有 一金屬板，電性 模造樹脂，封裝 該金屬板，其中 Part )，形成朝 )’而導電連結 透過上述的 封裝’使得該導 造樹脂的封閉性 可靠度增加。 再者，本發 括：一半導體晶 導引端，一金屬 端，以及一模造 材料、以及該金 (claw part ) 透過上述的 線架的爪合部， 造。 一實施例是一種 複數電極；打線 連接該複數電極 該半導體晶片、 特別地該導引端 向該金屬板之一 材料細施用於該 組成，該導電連 腳與模造樹脂間 (密封性）也被 半導體裝置，包括：一半 材料，具有複數導引端； 以及複數導引端；以吸一 部分之該打線材料、以及 具有一漸斜部（stepping 凹面形(concave shape 漸斜部。 結材料被防止流出導腳的 的接合力得到改良，而模 改良，使得半導體裝置的 明之另一實施例是一種半導體裝置，包 片，具有複數電極；一導線架，具有複數 板，電性連接該複數電極以及複數導引 樹脂，封裝該半導體晶片、部分之該打線 屬板，其中特別地該金屬板具有一爪合部 1配合於該導線架。 組成:由於該金屬板的表面具有對應於導 因此該半導體裝置便报容易以高精密度製
五 、發明說明（8) 括：—半導ϋ Γ之ί:實f例是一種半導體裝置，包 導引端，· 一金屬柄，2钹數電極，·打線材料，具有複數 端；以及-模造樹脂，封數，極以及複數導引 材料、以及該金屬杯，:μ半導體晶片、部分之該打線 接於該模造樹脂，而該該金屬板之粗糙面係連 電極與導引端之間，該：】；；？至少-彎曲介於該 電極與導引端，並且上述邱=係猎由部分銀鍍膜連接淤該 至該電極與導引端之部分=刀銀鍍膜係僅施行於該金屬板
I 透過上述的組成，由於 與模造樹脂間的接人力烊~金屬板的表面粗糙，金屬板 被改良，使；半。裝】：巧；二封閉 於金屬板係透過部分參膣 的了罪度乓加。並且，由 該金屬板氧化，可減‘電=電極以及導引端，可防止 再者，本發明m與導引端之間的接觸電阻。 括、半導體晶片ί;:;:是-種半導體裝置，包 導引端；一金屬板，電性遠=極，打線材料，具有複數 端；以及-模造樹脂，封襄電極以及複數導引 材料、以及該金屬板，“ 2 ^體晶片、部分之該打線 (di_ed)面係連接於該中模特='該金屬板之渦槽 少一彎曲部，介於哼雷搞、化祕知，而該金屬板具有至 部分銀鑛膜連接於；電極斑^弓丨端之間，該金屬板係藉由 係僅施行於該金屬板之t /曲引柒，並且上述部分銀鍍膜 透過上述的組成，；二:2電極與導引端之部分。 由於遠金屬板的表面具有渦槽，金
iWlH1 II 7061-4293-Pf.ptd 第13頁
接於該模造 電極與導引 電極與導引 連接該電極 透過上 屬板與模造 (密封性） 且’由於金 可防止該金 阻。 再者， 其中導引端 該導引端以 料而連接。 樹脂’而該 端之間，該 端，並且上 與導引端之 述的組成， 樹脂間的I妾 也被改良， 屬板透過部 屬板氧化， 本發明之另 具有漸斜部 及金屬板係 透過上 而擴散，並 樹脂的封閉 靠度增加。 以及導引端 之間的接觸 再者， 其中形成於 透過上 可將該金屬 述組成 且金屬 性（密 並且， ，可防 電阻。 本發明 金屬板 述組成 板對應 金屬板具有至少一彎曲部， 金屬板係藉由部分銀鍍膜連結於= 部分。膜係不知仃該金屬板不 由於該金屬板的表面具 合力增加，而模造樹脂性金 使得半導體裝置的可靠度增加 刀鐘膜連結於該電極以及導引端、，’ 可減低電極與導引端之間的接觸電 一較佳實施例是一種半導體裝置， 丄形成朝向金屬板一侧之凹面形而 藉由施用於該漸斜部之導引連結材 邊導電連結材料可被防止流出至導 板與模造樹脂間的接合力增加，而模造 封性）也被改良，使得半導體裝置的= 由於金屬板透過部分鍍膜連結於該電極 止該金屬板氧化，可減低電極與導引端 之另一較佳實施例是一種半導體裝置， 的爪合部係配合於該導線架。 由於4金屬板之表面具有爪合部，厭 於該導線架而定位。因此，該半導體裝
511199 發明說明（11) 置可以容易地以高精密度製造。 再者’本發明之另一較隹實施例的特點是，該金屬板 的弓曲部具有溝槽，騎方向係交叉於該導端的延伸方
tin 〇 T 士 +透過上述組成，由於該金屬板可以在製造半導體裝置 時容易彎曲，使得半導體裝置的製造容易。再者，即^該 導電連結材料流到導腳，也會被該溝槽止住。結果，金屬^ 板與模造樹脂間的接合力增加，而模造樹脂的封閉性（密 封性）也被改良。 * 开> 点ΐϊιΐ發明之另一較佳實施例的特點是，該溝槽係 办成於该金屬板之彎曲部的凹面一侧。 時办ΐίί述Μ’由於該金屬Μ以在製造半導體裝置 守谷易写曲，而模造樹脂的封閉性（密封性）也被改良。 再者，本發明之另一較佳實施例的特點 連結至該金屬板的部分係部分鍍臈。 等W% 高。透過上述組成，該金屬板的抗氧化能力被進一步提 括：ΐ:導二：m ξ施例是-種半導體裝置’包 導弓1 @ ^複數電極；打線材料，具有複數 端；以及-模造樹脂，封電極以及複數導引 材料、以及該金屬板，1中=+導體晶片、部分之該打線 接於該模造樹脂，而該溝样地該金屬板之粗糙面係連 交又於該導引端的延伸方^糸形成於導引端，其方向係
7061-4293-Pf.ptd 第16頁 511199 五、發明說明（12) 與模ίίΐΐ = ΐ力ί力於該金屬板的表面粗糙’金屬板 性）也被改良，使得二丄：模造f脂的封閉性（密封 於形λ右湛播如 ν體裝置的可罪度增加。並且，由 被該溝槽部二：電連結材料流至導腳，該材料可 毁壞，而半導體装；的可腳間的接合力不會 再者，本發明之另—音Α 括：-半導體晶片，具有複G : 了種：導體裝置’咆 導引端；-金屬板，電極線材料’具有複數 端•以及Μ 1 Μ π 連接5亥稷數電極以及複數導引 :料部分之該打線 •並連接於該模造樹:特=有 鳊，其方向係交叉於該導引端的延伸方向/ 、 屬板ίϋ:二u t该金屬板的表面具有滿槽，金 (密封性）也被改良，使得半導體Γ=性、 :’由於形成有溝槽部’即使導電連結材；2 ‘二$ 材料可被該溝槽部止住。結果，模造# 4;至導腳，戎 力不會毀壞，❿半導體裝置的可靠度；：J:腳間的接合 再者，本發明之另一實施例為_半 雖 性為該金屬板具有至少一彎曲部，介於該u钤^中特 之間’該金屬板係藉由部分鍍膜連結於 ° /、Μ 引端 端，而該部分銀鍍膜系僅施用於該金屬以及該導引 端之部分。 仝屬板至電極以及導引
五、發明說明（13) 透過上 屬板與模造 (密封性） 且’由於該 弓I端，該金 觸電阻可以 再者， 為該金屬板 間，該金屬 端，而該部 及導引端之 透過上 屬板與模造 (密封性） 且，由於該 引端，該金 觸電阻可以 再者， 為該導引端 部，而該導 導電連結材 透過上 腳而擴散， 樹脂的封閉 述的組成， 樹脂間的接 也被改良， 金屬板係藉 屬板可被防 降低。 本發明之另一 具有至少一 板係藉由部 分銀鍍膜系 部分。 述的組成， 樹脂間的接 也被改良， 金屬板係藉 屬板可被防 降低。 本發明之另 具有一漸斜 引端以及該 料連接。 述的組成， 而金屬板與 性（密封性 由於該金屬板的表面具有渦槽，金 合力增加，而模造樹脂的封閉性 使得半導體裝置的可靠度增加。並 由部分銀鍍膜連結於該電極以及導 止氧化，而電極與導引端之間的接 .徵為一半導體裝置，其中♦性 彎曲部，介於該電極與該導引端之 刀銀鑛膜連結於該電極以及該導弓丨 不施用於該金屬板不連結於電極以 由於該金屬板的表面具有渦槽，金 合力增加，而模造樹脂的封閉性 使得半導體裝置的可靠度增加。並 由部分銀鍍膜連結於該電極以及導 止氧化，而電極與導引端之間的接 一特徵為一半導體裝置，其中特性 部，用以形成朝向該金屬板之凹 金屬板系透過施用於該漸斜部之一 該導電連結材料係被防止流出至導 模造樹脂間的接合力增加，而模造 )也被改良，使得半導體裝置的可
)11199
靠度增加。 再者，本發明之另一特徵為一半導體骏置，其中 為該金屬板形成有爪合部，配合於該導線架。 ’、 、性 透過上述的組成，該半導體裝置可以進 制冰。 史仃同積铪度的 再者，本發明之另一特徵為一半導體装置，其中 為該金屬板彎曲部之底部形成有溝槽，其方向係^ : 導引端之延伸方向。 ϋ ’、μ置於該 透過上述的組成，即使該導電連結材料流出至 力私加，而杈造樹脂的封閉性（密封性） 半導體裝置的可靠度增加。 a被改良，使得 、再者，本發明之另一特徵為一半導體，琶，豆中转祕 為該導引端係部分鍍膜於連結該金屬板之；八。^ 、 透過上述的組成，該金屬板之抗ιϋ 步之改良。 饥虱化效果可獲付進一 圖式簡單說明·· 優點、以及特色係 步之解釋。 置1，以打線法 ，而圖1 B是其沿著
本發明之上述、以及其他的目的、 藉由以下說明以及所附圖示加以更進— 圖1Α與1Β係顯示一典型之半導體麥 (wire bonding )製造。圖1Α為平面^ 線圖1Α上I - Γ產生之剖面圖； ° 圖2A與2B係顯示一典型之半導體穿 置2，其中使用有
7061-4293-Pf.ptd 第19頁 511199 五、發明說明（15) 一用以連結的金屬板。圖2A為平面圖，而圖2B是其沿著線 圖2A上ΙΙ-ΙΓ產生之剖面圖； ’、 、 圖3A與3B係顯示本發明之第i實施例的半導體裝置3。 圖3A為平面圖，而圖3B是其沿著線圖3A上III-III，產生之 剖面圖； 圖4A至4C係顯示本發明之第i實施例的半導體裝置3銅 板51 (例1 )。圖4A為平面圖，而圖4B是其沿著線圖4A上 IV- IV’產生之剖面圖，而圖4C顯示圖4B的底面； 圖5A至5C係顯示本發明之第i實施例的半導體裝置3銅 板51 (例2)。圖5A為平面圖，而圖5B是其沿著線圖5A上 V- V’產生之剖面圖，而圖5C顯示圖5B的底面； 圖6A至6C係顯示本發明之第1實施例的半導體裝置3銅 板51 (例3)。圖6A為平面圖，而圖6B是其沿著線圖6A上 VI- VI’產生之剖面圖，而圖6C顯示圖“的底面； 圖7A至7C係顯示本發明之第1實施例的半導體裝置3銅 板51 (例4)。圖7A為平面圖，而圖7B是其沿著線圖4A上 VII- VII’產生之剖面圖，而圖7C顯示圖7B的底面； 圖8A與8B係顯示本發明之第1實施例的半導體裝置3所 使用之導線架60上的源極導腳63。圖^為平面圖而圖8B是 其側視圖； 圖9A與9B係顯示本發明之第2實施例的半導體裝置4。 圖9A為平面圖’而圖9B是其沿著線圖9A上線VI I I_VI I Γ產 生之剖面圖；以及 圖1 0 A至1 〇 D係顯示本發明之第2實施例的半導體裝置4
7061-4293-Pf.ptd 第20頁 511199 五、發明說明（16) 所使用 的鋼板56。圖10A為平面圖，而圖UR是其沿著 10A上IX-IX’產生之剖面 圖’圖丨〇(：顯示圖10B的底面， 圖10D顯示圖10A上線X-X’ 符號說明： 產生之剖面圖。 1、 2〜實施例； 3、4〜半導體裝置； 7 - y連結線； 8〜模造樹脂； 9 ^ “晶片連結材料； 3 0〜半導體晶片； 31 〜閘極； 3 2〜源極； 51 〜銅板； 52〜銀鍍膜； 53 〜渦槽； 5 4〜粗糙面； 56 〜銅板； Ma 'Mb〜銀鍍膜； 58 〜爪合部； 6 0〜導線架； 61 〜汲極導腳； 6 2〜閘極導腳； 63 〜源極導腳； 64〜島部； 65 〜閘極終端； 6 6〜寬源極終端； 67 〜漸斜部； 67a 〜壁面（rising wall) 68 81 〜溝槽； 〜外形。 70〜溝槽；
實施例之詳細說明 、本發明之實施例係藉由所附之圖示加以說明。其中， 以下對於貫施例的說明係完全不用以對本發進行任何的限
7061-4293-Pf.ptd 第21頁 511199 五、發明說明（17) 貫施例1 首先，本發明實施例1之一半導體裝置3係以圖3 A與圖 3 B加以說明。圖3 A與圖3 B係顯不本發明實施例1的半導體 裝置。圖3A是爭面圖，而圖3B是一剖面圖，言線11 I-I 11 進行剖視。 如圖3 A與圖所示’半導體裝置3係一 8PI N SOP，其 製造包括設置速結一半導體晶片3 0於其上。該半導體冲片 30具有一M0SFET的導線架60 ’透過連結線7 (例如金線）
以及鋼板5 1形成電性連結’並封裝於模造樹脂8 (例如環 氧樹脂等物）。半導體晶片30具有閘極3 1以及上部具有大 面積單一源極3 2、還有一汲極（未圖示）設於底部。這些 電極為或是錄合金電極、金合金電極、或是藉由電艘 金、銀等形成之電極。導線架6 0中，導腳由封裝之反面伸 出，3 A圖中’四個》及極導腳設於左側，一閘極導腳β 2與三
源極導腳63設於右侧。汲極導腳6 1係在封裝内侧一體成 形，所以形成一島部64。閘極導腳62具有閘極終端65，設 於封裝内部。三個源極導腳63係一體成形於封裝内部，並 具有一個單一整合的寬源極終端（wide s〇urce terminal )66。半導體晶片30係藉由晶片連結（die b〇nding )材 料9連結於島部64，而一汲極（未圖示）係電性連接於島 P64同日守半導體晶片30上，島部64中的安裝區可以鍍 5 Π導ί晶片3〇之上表面的閘極31以及導線架60的閘 極故線連結。導線架60的源極32以及源 極終端6 6係與鋼柄$ 1. r ,,. 運…。銅板5 1係以一端透過導電膠6
五、發明說明（18) =接^極32 ’並以另—端透過導電膠6連結於原終端 曰二二透過銅板51電性連接於源極32和原終端66。半導體 ^ 内導腳（包括島部6 4、閘極終端6 5、以及源極終 =)=連結線7、以及銅板51係封裝於模造樹脂8以形成 ^。物（外導腳）係暴露於模造樹脂8而形成外終 端。 膠係一黏接物’具有樹脂例如環氧樹脂、壓克力 (ACRYLIC)樹脂等類為主要材料，加入保存劑“…叫 afe η')以及導電物質例如銀粉。導電膠也可以用銲錫取 ΪήΪ好使用的《彈性低的導電膠以冑節因冑熱膨脹係數 不同所形成的熱應力。 姑料以銅合金製成。雖然Fe—nu2合金，或其他 ^^也可以代替使用，銅合金的銅板是較好的選 擇’因為散熱性較佳。 一銅板51,疋一條帶狀的銅板，寬度約為3A圖所示封裝的 其^狀在源極3 2以及源極終端6 6的接合面處呈現 I ί却而在源極32以及源極終端66的接合面之間設有兩處 1曲部，如3Β圖所示。銅板51可以衝壓製成。 銅，51的上表面（連接於源極以及源極終端的該面之 反）粗糙，並在底部部分鍍有銀鍍膜52。 其中，使表面粗糙的其況包括微粗糙（micro r^ughemng，形成微米尺寸的粗糙面）以及大粗糙 macro roughening，形成大尺寸的粗糙面）。這是因 為，微粗糙以及大粗糙製程都可以增加模造樹脂的接合
7061-4293-Pf.ptd
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五、發明說明（19) 性。 其中，形成粗链的方法包括在金屬板的面上形成渦槽 製程（dimpled process )，在金屬表面上形成渦槽，以曰 連結於上述的模造樹脂。 曰 、表面粗糙的金屬板也可以藉由移除表面上的材料而形 成。還有擊打上述材料的方法、使材料塑性變形的方法、 以及其他。進一步講，可以利用蝕刻、化學印刷、以粒子 *(例如絲狀、鬚狀粒子）衝擊植入材料表面、喷沙法、以 模具成轉印不平整表面的方法等等。 / 再者’在鍍膜形成金屬板51的製程中，較好的是採用 部分鍍膜，在金屬板與半導體晶片之電極的接合面鍍膜， f金屬板與導引終端的接合面鍍膜，但不在整個金屬板的 、面鍍膜。這是因為，如果在金屬板與模造樹脂的接合面 上進行鍍膜的話，會形成光滑的表面，而減少與模造樹脂 的接合力。亦即，上述的金屬板透過部分鍍膜與上述電極 =及導引終端接合，同時上述模造樹脂也與該金屬板結 上述構成，更詳細的圖形可以參照圖4A至4(：、5A黾
5CW，m7Am4u4G#^^515(A^ )用於本發明半導體裝置3之第一實施例。圖“係說明其 ^視圖，圖4B說明其沿剖面線^—；^，剖開的剖視圖，而圖 4C顯示其下視圖。 如圖4A與圖4B所示，銅板51在上表面具有渦槽53。渦 曰3形成於銅板5 1，製程可以採用蝕刻以及衝壓。使用蝕
7061.4293-Pf.ptd 511199 五、發明說明（20) 刻法時，係採用半蝕刿 使用蝕刻法時，移除的二糸不完全採用蝕刻’套。在完全 電阻。未避免銅較多，而會增加銅板51的 貫孔的方式，ίό不用：成：電阻產生’蝕刻時可以用形成 枝人丄 不用k成渦槽53的方法。與模造抖日匕S认 接合力可以藉由貫孔來增加。 、4树知8的 ，，，銅板51的底部係具有銀鑛膜52，銀鑛可防 間的ί ^ *改進導電性，並降低源極32以及源極終端日6 ^ 二；=阻。隨與4C中，銀鍍膜52並沒有施行於整個 面 ^底部’僅施行在其與源極32與源極終物的接 面上。另一方面，銅板的上表面則完全不實施銀鍍膜。 _ Ϊ ί膜最好僅僅施行於銅板5 1與源極32以及源極終端 的接&面處。再者，銅板51與源極32以及源極级端Μ 接合面以外的地方最好不要實施任何銀鍍膜。藉此，可以 ^加模造樹脂與銅板之間的接合力，而該半導體裝置的可 罪度便可以增加。 再者’銀鑛膜可以施行於源極終端66與鋼板51的接a 處。藉此可以進一步防止源極終端66與銅板51的接合處二 氧化。 如圖3A與3B所示地，以樹脂封裝上述的銅板51以及相 關結構’其中部分的模造樹脂8充滿渦槽並且硬化，於是 銅板51與模造樹脂之間的接合力便改良了，而且整體半導 體裝置的可靠度增加。 _ 圖5A至5C以及圖6A至6C所示的結構也可以用於表面粗 糙的銅板51的結構。圖5A至5C係說明銅板51 (例2 )用於
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本發明半導體裝置3之第一 圖，圖5B說明其沿剖面線¥ 其下視圖。 貫施例。圖5A係說明其上視 -V剖開的剖視圖，而圖5C顯示 如圖5Δ與圖5β所示，鋼板η扁 + 學印刷的方法所形成的表面粗糙^具有靜法或化 具有粗糙面54。如圖3Α與3Β，將且有：过上表面 分之模造樹脂充滿於粗糙面的、;:、，並且部 , ^ t w w日7細儆餘枓中並且硬化，因 =Λ模：樹脂8之間的接合力增加，而整體半導體 裝置3的可靠度也增加。 再者， 銅板51氧化 之間的接觸 個銅板51的 合面上。另 膜。 銅板5 1的底 ，改進導電 電阻。圖5Β 底部，僅施 一方面，銅 部係具有銀 性，並降低 與5C中，銀 行在其與源 板51的上表 鍍膜52。銀 源極32以及 鍍膜52並沒 極32與源極 面則完全不 鍍52可防止 源極終端6 6 有施行於整 終端6 6的接 實施銀鍍 銀鍍膜最好僅僅施行於銅板51與源極32以及源極終端 66的接合面處。再者，銅板51與源極32以及源極終端“的 接合面以外的地方最好不要實施任何銀鍍膜。藉此，可以 增加模造樹脂8與銅板之間的接合力，而該半導體裝置的 可靠度便可以增加。 再者’銀鍍膜可以施行於源極終端6 6與銅板5 1的接合 處。藉此可以進一步防止源極終端66與銅板51的接合處的 氧化。 511199
圖6 A至6 C係說明銅板5 1 (例3 )用於本發明半導體裝 置3之第一貫施例。圖6A係說明其上視圖，圖6β說明其沿 剖面線vI-Vγ剖開的剖視圖，而圖6C顯示其下視圖。 如圖6A與圖6B所示，銅板51的上表面，鬚狀 (whisker)鍍膜55接合並固定著。如圖3所示地，將具有上 述結構的銅板51封裝於樹脂中，模造樹脂8參入了銅板5 1 的材料中’並且部分之模造樹脂充滿於不規則面的鬚欲 (whi sker)鍍膜之細微邊緣中並且硬化，因此，銅板與模 造樹脂8之間的接合力增加，而整體半導體裝置3的可靠度 也增加。 一再者’銅板51的底部係具有銀鍍膜52。銀鍍52可防止 銅板51氧化’維持導電性，並降低源極32以及源極終端 之間的接觸電阻。圖6B與6C中，銀鍍膜52並沒有施行於整 個銅板51的底部，僅施行在其與源極32與源極終端66的接 合面上。另一方面，銅板5丨的上表面則完全不實施銀鍍 膜。 銀鍍膜最好僅僅施行於銅板5丨與源極32以及源極終端 66的接合面處。再者，銅板51與源極32以及源極終端的 接合面以外的地方最好不要實施任何銀鍍膜。藉此，可以 增加模造樹脂8與銅板之間的接合力，而該半導體装置的 可靠度便可以增加。 再者，銀鍍膜可以施行於源極終端6 6與銅板5丨的接合 處。藉此可以進一步防止源極終端6 6與銅板5丨的接合 氧化。
511199 五、發明說明（23) 再者，不論是否採用以上所述的渦槽5 3、粗糙面$ 4、 以及鬚狀（鬚狀鍍膜55，模造樹脂都會連結於銅板5丨材 料，而銅板5 1表面的氧化層會增加模造樹脂8的接合力， 而增進半導體裝置3的可靠性。 圖7A至7C係說明銅板51 (例4)用於本發明半導體裝 置3之第一實施例。圖7A係說明其上視圖，圖7B說明其沿 剖面線V 11 - VI Γ剖開的剖視圖，而圖7 C顯示其下視圖.。 如圖7A與圖7C所示，溝槽70係形成於銅板51的兩個彎 曲部70，其方向與源極66的方向交叉。溝槽70的形成方式 可以是蝕刻或衝壓。在製造半導體裝置3時，形成溝槽7〇 後，銅板51會易於彎曲，而增加半導體裝置的生產容易 性。並且，銅板與模造樹脂8之間的接合力增加，而整體 半導體裝置3的可靠度也增加。 圖7 A至7 C中，溝槽7 0係形成於上述金屬板彎曲部的凹 側。該溝槽也可以形成於上述彎曲部凹側的反面，亦即， 突出面側。 另一方面，如圖3A與3B所示，一漸斜部67形成凹部， 朝向銅板51，而溝槽部68係形成於導線架60。圖8A與8B將 說明此結構。圖8A與8B係部分說明該導線架60之源極導腳 63的部分（為本發明之半導體裝置的第一實施例）。圖8A 為一平面圖’而圖8 B是一側視圖。 如圖8A與8B所示，漸斜部67形成於源極終端66。源極 終端6 6因此形成寬、並且集合成三源極導腳的結構。亦 即’形成長軸方向平行於封裝的外部形狀8丨的情形。如圖
7061-4293-Pf.ptd 第28頁 M1199 五、發明說明（24) 8A與8B所示，漸斜部67是一個漸斜的部八， 、 上部朝向銅板51的方向凹入。在某種情二下，周圍導腳的 6:ίί點：沿著導腳的延伸方向觀察源極終端以 升（土面（riSing wall)67 a。壁面6?& 日少成 外形，並垂直於源極導腳6 3的延伸方向。丁；子裝8 1的 再者，三個源極導腳63上分別形成有、、盖 t ’並垂直於源極導腳63的延伸方向。 ^外 :於=的漸斜部以及溝槽並沒有形成於 4t ΐ一連串的製程中，銲錫或導電膠被施用於源極ί &、女裝上金屬板、然後重新塗佈或修整膠料，、有時、+ 勝會流出到封裝的外侧，到達源二：時二 模造樹脂的接合性便減低，而半導體裝 67以姚本發明之實施例的半導體裝置中，由於漸斜部 鳴 及溝槽部68形成於導線架60，銲錫膠或導電膠塗佈 :刷在漸斜部67之底部時，會被漸斜部67以及：面I佈限或 ,不會流到源極導腳而擴散。並且，在某些情況下， 1 =錫膠或導電膠流出壁面67a外，其流出終會被溝槽部 截斷。結果，源極導腳63與模造樹脂δ之間的接合力不 曰減少’而整體半導體裝置3的可靠度也增加。 漸斜邛6 7以及溝槽部6 8可以在衝壓導線架時形成。 /邛7係一漸斜部份，藉由在衝壓時擠壓部分之源極終端
M1199 五、發明說明（25) 66而形成。然 法形成。 再者，漸 使之形成於漸 銲錫膠或導電 到源極終端6 3 點。因為，形 部銲錫膠或導 流至封裝的内 該漸斜部 理由是，如果 將只在由基點 現下降。這樣 流動。 ’該漸斜部也可以不經過衝壓而以彎曲方 斜部6 7以 斜部6 7的 膠流出溝 的外側， 成漸斜部 電膠的流 部。 的形成， 這些漸斜 、由導引 的漸降壁 外，也可以使用約成ϋ形的溝槽， 位置。然而，在形成溝槽時，如果 槽部，該銲錫膠或導電膠可能合流 因此，形成上述的漸斜部實有其優 日寸，並沒有形成壁面來阻擋封-裝内 出，因此多出的銲錫膠或導電膠將 對應於鄰近的板件，係略為降低。 部是略高的漸斜部，所形成的壁面 終端沿著導腳的延伸方向觀察時呈 面降不能有效阻止導電結合材料的 壤。者’由於部分的模造樹脂8充滿於溝槽部68，並在 田、μβ中侍到修整，導線架60與模造樹脂8之間的接合力 曰8而得改善。因此，如圖3 Α以及3 Β所示，溝槽6 8部 形、於封裝終端面的内部之汲極導腳6丨以及閘極導腳6 2。 以下’本發明的半導體裝置4的一實施例2係說明於圖 =以及10Α至i〇c。圖9Α與⑽係說明本發明之實施例2 的、…/體裝置4，而圖9Α是其平面圖，圖9Β是剖面圖，剖 面1係參照圖^之剖面線¥111-¥111，。圖1(^至1〇(：係說明 ^ =明之實施例2的半導體裝置4所使用的銅板56。圖1〇Α 疋其平面圖’圖1 0 Β是剖面圖，剖面圖係參照圖1 Ο Α之剖面
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線IX-IX’ ，而圖10C是下視圖。 實施例2的半導體裝置4具有與實施例1之半導體裝置3 的相同組成。然而，其不同處在於銅板56上形成的爪合 58 〇 相同於實施例1的鋼板51，銅板56鍍有銀鍍膜57a、 5 7b。圖1〇β與l〇C所示，銀鍍膜57^、57b並沒有出現於整 個銅板56的底面，而銀鍍膜56a係形成於源極32的接觸 面’而銀鍍膜57b出現在源極終端66的接觸面。另一方 面’銅板56的上表面沒有任何銀鑛膜。
雖然銅板5 6具有與實施例1的銅板5丨相銅的形狀，銅 板56在末端之源極導腳63侧形成有三個爪合部58。如圖 所示，二個爪合部5 8的形成係藉由朝向底面彎曲銅板5 6， 並在銀鍍膜57b之面形成突出。圖“與⑽中，第二與第三 爪合部58由上部開始，係對應配合於閘極導腳62與源極導 腳63間的間隙。圖9A與9B中，第一爪合部58由上部開始， 係對應配合於閘極導腳6 2與源極導腳6 3間的間隙，但並不 與閘極導腳6 2接觸’而隔絕於閘極導腳6 2。第一爪合^ μ 係配合於源極導腳6 3。 爪合部5 8可形成於銅板5 6進行衝壓時。
藉由形成上述的爪合部58，藉由在安裝銅板56時，將 爪合部58***導腳間而配合於源極導腳63，銅板56可以梦 準地定位於一半導體晶片30的源極32以及源極終端66。= 好形成有兩個或更多個爪合部。若只有一個，上述的 配合將指能出現於一點。結果，金屬板可能會有沿爪合部
7061.4293-Pf.ptd 511199 五、發明說明（27) 為中心轉動的可能，造成金屬板位置的誤差。 以下，將揭露銅板的表面平均粗度Ra之例。 沒有經過表面粗糙化的銅板，其表面粗縫度是〇 · 1 # m
Ra ° 經過化學印刷（c h e m i c a 1 p u b 1 i s h i n g，化學溶液處 理）表面粗糙化的銅板，其表面平均粗糙度是〇· 2至〇· 3从 \ Ra。經過喷沙法表面粗糙化的銅板，其表面平均粗趟度 是0.3至0.4 Ra。經過鬚狀鍍膜表面粗糙化的銅板，其 表面平均粗糙度是0.3至〇.4/zm Ra 的接合 合，並 佈樹脂 側凹入 模造樹 水、氣 再 片的電 金屬板 雖 以限定 精神和 護範圍 上所述，本發 力’因為模造 且藉此也可以 的地方，在導 ，因此’本發 脂所提供的封 體等等的滲透 者，本發明有 極以及導線架 上形成爪合部 然本發明已以 本發明，任何 範圍内，當可 當視後附之申
樹脂與 有效防 引終端 明有效 閉特性 ，而改 效、簡 的導引 ，使其 具體之 熟習此 進行更 請專利 經過表面粗糙化的金屬板結 止導電接合材料的流出；在 部分形成有漸斜部，朝金屬 改進模造樹脂與的接合力以 (封裝特性），防止半導體 ，半導體裴置的可靠度。 早地安裝一金屬板於半導體 終螭，藉由配合於導線架而 ΐ有精準的安裝位置。 :苑例說明如上，然其並非 :?藝者，在不脫離本發明 $圍潤飾。因A，本發明之 耗圍所界定者為準。

Claims (1)

  1. 511199 六、申請專利範圍 1. 一種半導體裝置，包括： 一半導體晶片，具有複數電極； 打線材料，具有複數導引端； 一金屬板，以第一部連接該複數電極，並以第 接該複數導引端；以及 一模造樹脂，封裝該半導體晶片、部分之該打線 料、以及該金屬板， 其中該金屬板之一面係崎嶇而連結於該模造樹脂。 2· μ請專利範圍第上項所述的半導體裝置，其 由在該金屬板鍍膜而使該全屬姑在鱼拉 曰 該複數導引端。 /金屬板係連接於該複數電極以及 3·如申請專利範圍第2項^ ^ ^ ^ ^ ^ ^ ^ ^ 鍵膜4係:Ξ Ϊ圍ΓΛ所述:半導趙裝* 金屬板具有—溝禅，^ f4項所述的半導體裝置 6. 如申古f # 成於該金屬板之該彎曲部 溝槽係形述的半導體裝置 7. 如申請專部的-凹部。 複數導引蠕係加以鍍膜。員所述的半導體裝置： 、卜8·如申請專利範圍第3 Jg ^ 複數導引端具有一凹面以及所述的半導體裝置， 連 其中該 其中該 其中該 其中該 其中該 1 7061-4293-Pf.ptd 第33頁 其中该金屬板係藉由— 其中該 9 ·如申請寻利範圍第8 引連結金屬連接於該凹面‘ 金屬板之該面係形成粗糙面頃所述的半導體裝置，其中該 1 0 ·如申請專利範圍第 其中該 金屬板之該面係具有渦槽。、所述的半導體裝置 1 1 ·如申請專利範圍第 金屬板具有至少一貫孔。項所述的半導體裝置 12.如f請專利範圍第8項所述的半導中 金屬板之該面具有複數鬚狀鍍膜。 、置，、中该 13·如申請專利範圍第3項所°述 金屬板具有複數爪合部，配入T等體裝置其中该 I 配合於該打線材料。 14.如申請專利範圍第13項 該金屬板之該面係粗#。 幻千等體裝置’其中 的半導體裝置，其中 的半導體裝置，其中 的半導體裝置，其中 15·如申請專利範圍第13項所述 該金屬板之該面具有渦槽。 1 6 ·如申請專利範圍第1 3項所述 該金屬板具有至少一貫孔。 1 7·如申請專利範圍第1 3項所述 該金屬板之該面具有複數鬚狀鍍膜。 18· —種半導體裝置，包括·· 一半導體晶片，具有複數電極； 一打線材料，具有複數導引端； 、了金屬板，藉由鍍膜而以第一部連接於該複數電極， 並以第二部連接該複數導引端，該金屬板在該第一部與第
    第34頁 7061-4293-Pf.ptd 511199 六、申請專利範圍 二部具有至少一彎曲部，而該彎曲部形成有一溝槽，該溝 槽之方向係交叉於該導引端之方向；以及 一模造樹脂，封裝該半導體晶片、部分之該打線裝 置、以及該金屬板， 其中該金屬板之一面細崎喂並連結於該模造樹脂。 1 9.如申請專利範圍第1 8項所述的半導體裝置，其中 該金屬板之該面係形成粗糙面。 - 2 0.如申請專利範圍第18項所述的半導體裝置，其中 該金屬板之該面具有渦槽。
    7061-4293-Pf.ptd 第35頁
TW090121172A 2000-08-31 2001-08-28 Semiconductor device TW511199B (en)

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