TW333647B - The semiconductor IC device - Google Patents
The semiconductor IC deviceInfo
- Publication number
- TW333647B TW333647B TW086103977A TW86103977A TW333647B TW 333647 B TW333647 B TW 333647B TW 086103977 A TW086103977 A TW 086103977A TW 86103977 A TW86103977 A TW 86103977A TW 333647 B TW333647 B TW 333647B
- Authority
- TW
- Taiwan
- Prior art keywords
- power source
- source potential
- potential
- memory
- data
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003139 buffering effect Effects 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8290963A JPH10135424A (ja) | 1996-11-01 | 1996-11-01 | 半導体集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW333647B true TW333647B (en) | 1998-06-11 |
Family
ID=17762718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086103977A TW333647B (en) | 1996-11-01 | 1997-03-26 | The semiconductor IC device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5872737A (zh) |
| JP (1) | JPH10135424A (zh) |
| KR (1) | KR100224960B1 (zh) |
| TW (1) | TW333647B (zh) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW324101B (en) | 1995-12-21 | 1998-01-01 | Hitachi Ltd | Semiconductor integrated circuit and its working method |
| US5748547A (en) * | 1996-05-24 | 1998-05-05 | Shau; Jeng-Jye | High performance semiconductor memory devices having multiple dimension bit lines |
| US20050036363A1 (en) * | 1996-05-24 | 2005-02-17 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
| JPH10133908A (ja) * | 1996-10-29 | 1998-05-22 | Mitsubishi Electric Corp | マイクロプロセッサ |
| US6314523B1 (en) * | 1997-04-09 | 2001-11-06 | Compaq Computer Corporation | Apparatus for distributing power to a system of independently powered devices |
| JPH1186548A (ja) * | 1997-09-16 | 1999-03-30 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH11144465A (ja) * | 1997-11-10 | 1999-05-28 | Texas Instr Japan Ltd | 半導体記憶装置 |
| JP3853513B2 (ja) * | 1998-04-09 | 2006-12-06 | エルピーダメモリ株式会社 | ダイナミック型ｒａｍ |
| US6009023A (en) * | 1998-05-26 | 1999-12-28 | Etron Technology, Inc. | High performance DRAM structure employing multiple thickness gate oxide |
| US6144221A (en) * | 1998-07-02 | 2000-11-07 | Seiko Epson Corporation | Voltage tolerant interface circuit |
| KR100557568B1 (ko) * | 1998-12-31 | 2006-05-22 | 주식회사 하이닉스반도체 | 센스앰프 전원공급회로 |
| JP3233911B2 (ja) * | 1999-03-17 | 2001-12-04 | 株式会社 沖マイクロデザイン | 半導体集積回路装置 |
| US6236605B1 (en) * | 1999-03-26 | 2001-05-22 | Fujitsu Limited | Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier |
| TW526497B (en) * | 1999-05-18 | 2003-04-01 | Nanya Technology Corp | Data sensing method of semiconductor memory device |
| US6078513A (en) * | 1999-06-09 | 2000-06-20 | Neomagic Corp. | NMOS dynamic content-addressable-memory CAM cell with self-booting pass transistors and local row and column select |
| JP4308985B2 (ja) | 1999-08-12 | 2009-08-05 | 株式会社ルネサステクノロジ | 半導体装置 |
| JP2011054270A (ja) * | 2000-03-24 | 2011-03-17 | Renesas Electronics Corp | 半導体記憶装置 |
| US6347058B1 (en) * | 2000-05-19 | 2002-02-12 | International Business Machines Corporation | Sense amplifier with overdrive and regulated bitline voltage |
| JP2002025264A (ja) * | 2000-07-05 | 2002-01-25 | Toshiba Corp | 半導体装置 |
| JP4565716B2 (ja) * | 2000-08-30 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP4656747B2 (ja) * | 2001-03-30 | 2011-03-23 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2003059273A (ja) * | 2001-08-09 | 2003-02-28 | Hitachi Ltd | 半導体記憶装置 |
| JP3874655B2 (ja) * | 2001-12-06 | 2007-01-31 | 富士通株式会社 | 半導体記憶装置、及び半導体記憶装置のデータアクセス方法 |
| JP3938309B2 (ja) * | 2002-01-22 | 2007-06-27 | 富士通株式会社 | リードディスターブを緩和したフラッシュメモリ |
| EP1331627B1 (en) | 2002-01-24 | 2012-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of driving the semiconductor device |
| US6584002B1 (en) * | 2002-01-31 | 2003-06-24 | Hewlett-Packard Development Company, L.P. | Method of querying a four-transistor memory array as a content addressable memory by rows or columns |
| JP2003282823A (ja) | 2002-03-26 | 2003-10-03 | Toshiba Corp | 半導体集積回路 |
| TW556226B (en) * | 2002-04-09 | 2003-10-01 | Winbond Electronics Corp | Dual-phase pre-charging circuit and the assembled static-current elimination circuit |
| US7170179B1 (en) * | 2002-04-29 | 2007-01-30 | Cypress Semiconductor Corp. | Chip select method through double bonding |
| JP2004040960A (ja) * | 2002-07-05 | 2004-02-05 | Mitsubishi Electric Corp | 半導体モジュール |
| JP2004213722A (ja) * | 2002-12-27 | 2004-07-29 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及び半導体集積回路装置 |
| JP2005174432A (ja) * | 2003-12-10 | 2005-06-30 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| US7341765B2 (en) * | 2004-01-27 | 2008-03-11 | Battelle Energy Alliance, Llc | Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates |
| US7400167B2 (en) * | 2005-08-16 | 2008-07-15 | Altera Corporation | Apparatus and methods for optimizing the performance of programmable logic devices |
| EP1619687A1 (en) * | 2004-07-21 | 2006-01-25 | STMicroelectronics S.r.l. | Distribution of a reference voltage through a circuit |
| US7012841B1 (en) * | 2004-08-24 | 2006-03-14 | Freescale Semiconductor, Inc. | Circuit and method for current pulse compensation |
| JP4792034B2 (ja) * | 2005-08-08 | 2011-10-12 | スパンション エルエルシー | 半導体装置およびその制御方法 |
| US20070090385A1 (en) * | 2005-10-21 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2007273072A (ja) * | 2006-03-09 | 2007-10-18 | Matsushita Electric Ind Co Ltd | 半導体記憶装置および半導体装置 |
| JP2007251351A (ja) | 2006-03-14 | 2007-09-27 | Renesas Technology Corp | 半導体装置 |
| JP2008011446A (ja) * | 2006-06-30 | 2008-01-17 | Toshiba Corp | 半導体集積回路 |
| JP2009009680A (ja) * | 2007-05-25 | 2009-01-15 | Nec Electronics Corp | 半導体装置 |
| JP5202248B2 (ja) | 2008-11-26 | 2013-06-05 | パナソニック株式会社 | 半導体記憶装置 |
| US8958263B2 (en) * | 2011-06-10 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6100460B2 (ja) * | 2011-12-21 | 2017-03-22 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置 |
| JP5408274B2 (ja) * | 2012-02-20 | 2014-02-05 | 富士通セミコンダクター株式会社 | 半導体出力回路及び外部出力信号生成方法並びに半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06101679B2 (ja) * | 1985-06-21 | 1994-12-12 | 株式会社日立製作所 | 半導体集積回路装置 |
| US5264743A (en) * | 1989-12-08 | 1993-11-23 | Hitachi, Ltd. | Semiconductor memory operating with low supply voltage |
| JPH03228368A (ja) * | 1990-02-02 | 1991-10-09 | Hitachi Ltd | 半導体集積回路装置 |
| US5202855A (en) * | 1991-01-14 | 1993-04-13 | Motorola, Inc. | DRAM with a controlled boosted voltage level shifting driver |
| JPH0562467A (ja) * | 1991-09-05 | 1993-03-12 | Hitachi Ltd | センスアンプ駆動回路 |
| JP3085782B2 (ja) * | 1992-05-29 | 2000-09-11 | 株式会社東芝 | 半導体記憶装置 |
| JP3068377B2 (ja) * | 1993-06-30 | 2000-07-24 | 日本電気株式会社 | ダイナミック形半導体記憶装置 |
| JP3755911B2 (ja) * | 1994-11-15 | 2006-03-15 | 富士通株式会社 | 半導体回路 |
-
1996
- 1996-11-01 JP JP8290963A patent/JPH10135424A/ja active Pending
- 1996-11-04 KR KR1019960051822A patent/KR100224960B1/ko not_active IP Right Cessation
-
1997
- 1997-03-26 TW TW086103977A patent/TW333647B/zh not_active IP Right Cessation
- 1997-04-04 US US08/833,171 patent/US5872737A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980033971A (ko) | 1998-08-05 |
| US5872737A (en) | 1999-02-16 |
| JPH10135424A (ja) | 1998-05-22 |
| KR100224960B1 (ko) | 1999-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |