TW202004875A - 基板處理系統、基板處理方法、程式及電腦記錄媒體 - Google Patents

基板處理系統、基板處理方法、程式及電腦記錄媒體 Download PDF

Info

Publication number: TW202004875A
Authority: TW; Taiwan
Prior art keywords: substrate; wafer; processed; substrate processing; processing system
Prior art date: 2018-04-16

Application number

TW108112582A

Other languages

English (en)

Chinese (zh)

Inventor

田之上隼斗

Original Assignee

日商東京威力科創股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-04-16

Filing date

2019-04-11

Publication date

2020-01-16

2019-04-11 Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司

2020-01-16 Publication of TW202004875A publication Critical patent/TW202004875A/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 155
238000003672 processing method Methods 0.000 title claims description 14
238000010438 heat treatment Methods 0.000 claims abstract description 75
238000001816 cooling Methods 0.000 claims abstract description 46
239000000853 adhesive Substances 0.000 claims description 16
230000001070 adhesive effect Effects 0.000 claims description 16
238000005520 cutting process Methods 0.000 claims description 16
230000007246 mechanism Effects 0.000 claims description 14
238000000227 grinding Methods 0.000 claims description 8
238000005498 polishing Methods 0.000 claims description 7
238000005304 joining Methods 0.000 claims description 5
238000000034 method Methods 0.000 abstract description 16
230000008569 process Effects 0.000 abstract description 11
239000002131 composite material Substances 0.000 abstract 2
235000012431 wafers Nutrition 0.000 description 204
239000012790 adhesive layer Substances 0.000 description 32
239000002390 adhesive tape Substances 0.000 description 31
206010040844 Skin exfoliation Diseases 0.000 description 18
239000000498 cooling water Substances 0.000 description 10
230000007423 decrease Effects 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
239000004065 semiconductor Substances 0.000 description 4
239000011248 coating agent Substances 0.000 description 3
238000000576 coating method Methods 0.000 description 3
239000006260 foam Substances 0.000 description 3
239000010410 layer Substances 0.000 description 3
239000002184 metal Substances 0.000 description 3
230000004048 modification Effects 0.000 description 3
238000012986 modification Methods 0.000 description 3
230000032258 transport Effects 0.000 description 3
238000004140 cleaning Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
238000005187 foaming Methods 0.000 description 2
239000011521 glass Substances 0.000 description 2
230000001678 irradiating effect Effects 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000003287 optical effect Effects 0.000 description 2
230000002787 reinforcement Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 1
239000013078 crystal Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
238000007517 polishing process Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Dicing (AREA)

TW108112582A 2018-04-16 2019-04-11 基板處理系統、基板處理方法、程式及電腦記錄媒體 TW202004875A (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018078144A JP2021108306A (ja)	2018-04-16	2018-04-16	基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体
JP2018-078144		2018-04-16

Publications (1)

Publication Number	Publication Date
TW202004875A true TW202004875A (zh)	2020-01-16

Family

ID=68238862

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW108112582A TW202004875A (zh)	2018-04-16	2019-04-11	基板處理系統、基板處理方法、程式及電腦記錄媒體

Country Status (3)

Country	Link
JP (1)	JP2021108306A (ja)
TW (1)	TW202004875A (ja)
WO (1)	WO2019202980A1 (ja)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2004047770A (ja) *	2002-07-12	2004-02-12	Sony Corp	ウエーハのダイシング方法
JP4592270B2 (ja) *	2003-10-06	2010-12-01	日東電工株式会社	半導体ウエハの支持材からの剥離方法およびこれを用いた装置
JP6025759B2 (ja) *	2010-08-23	2016-11-16	東京エレクトロン株式会社	剥離システム
JP6466217B2 (ja) *	2014-04-10	2019-02-06	東京エレクトロン株式会社	剥離装置及び剥離システム

2018
- 2018-04-16 JP JP2018078144A patent/JP2021108306A/ja active Pending
2019
- 2019-04-03 WO PCT/JP2019/014742 patent/WO2019202980A1/ja active Application Filing
- 2019-04-11 TW TW108112582A patent/TW202004875A/zh unknown

Also Published As

Publication number	Publication date
WO2019202980A1 (ja)	2019-10-24
JP2021108306A (ja)	2021-07-29

Publication	Publication Date	Title
US9006085B2 (en)	2015-04-14	Adhesive and protective member used in a wafer processing method
JP3761444B2 (ja)	2006-03-29	半導体装置の製造方法
JP2008034623A (ja)	2008-02-14	ウエハの接着方法、薄板化方法、及び剥離方法
JP4239974B2 (ja)	2009-03-18	半導体素子の製造方法およびリング状補強部材
TW202349488A (zh)	2023-12-16	基板處理系統及基板處理方法
JP6158721B2 (ja)	2017-07-05	洗浄装置、剥離システム、洗浄方法、プログラム及びコンピュータ記憶媒体
TWI645502B (zh)	2018-12-21	電子構件的製造方法及處理系統
TW201324648A (zh)	2013-06-16	洗淨方法、電腦記憶媒體、洗淨裝置及剝離系統
JP6956788B2 (ja)	2021-11-02	基板処理方法及び基板処理システム
JP2012114265A (ja)	2012-06-14	半導体ウェーハ用保持具及び半導体ウェーハの取り扱い方法
JP2019057526A (ja)	2019-04-11	ウエーハの加工方法
TW202004875A (zh)	2020-01-16	基板處理系統、基板處理方法、程式及電腦記錄媒體
JP4462940B2 (ja)	2010-05-12	半導体装置の製造方法
JP2015088620A (ja)	2015-05-07	剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
TWI762698B (zh)	2022-05-01	基板處理方法
JP2012256666A (ja)	2012-12-27	ウェーハ保持ジグ
JP6466217B2 (ja)	2019-02-06	剥離装置及び剥離システム
JP4801644B2 (ja)	2011-10-26	基板保持装置、基板処理装置および基板処理方法
JP7477325B2 (ja)	2024-05-01	加工方法
TW201921473A (zh)	2019-06-01	基板處理方法、程式、電腦記憶媒體及基板處理系統
JP2006228810A (ja)	2006-08-31	ウェーハの分割方法
TW201921545A (zh)	2019-06-01	基板處理系統及基板處理方法
TWI802197B (zh)	2023-05-11	半導體製造裝置及半導體裝置的製造方法
JP7289247B2 (ja)	2023-06-09	チップの製造方法
JP2001210708A (ja)	2001-08-03	基板の搬送方法及び基板搬送用のトレー