TW202002172A - 半導體元件 - Google Patents

半導體元件 Download PDF

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Publication number
TW202002172A
TW202002172A TW108119858A TW108119858A TW202002172A TW 202002172 A TW202002172 A TW 202002172A TW 108119858 A TW108119858 A TW 108119858A TW 108119858 A TW108119858 A TW 108119858A TW 202002172 A TW202002172 A TW 202002172A
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Taiwan
Prior art keywords
metal layer
thickness
layer
top surface
passivation layer
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TW108119858A
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English (en)
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TWI808192B (zh
Inventor
崔朱逸
文光辰
朴秀晶
徐柱斌
安振鎬
林東燦
藤崎純史
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南韓商三星電子股份有限公司
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Publication of TW202002172A publication Critical patent/TW202002172A/zh
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Publication of TWI808192B publication Critical patent/TWI808192B/zh

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Abstract

本發明揭露一種半導體元件,所述半導體元件包括:導電圖案,位於基板上;鈍化層,位於基板上且包括部分地暴露出導電圖案的開口;以及接墊結構,位於鈍化層的開口中且連接至導電圖案。接墊結構包括:第一金屬層,填充鈍化層的開口且具有較開口的寬度大的寬度;以及第二金屬層,位於第一金屬層上。第一金屬層在第一金屬層的外壁處具有第一厚度,在鈍化層的頂表面上具有第二厚度,且在導電圖案的頂表面上具有第三厚度。第二厚度大於第一厚度,且第三厚度大於第二厚度。

Description

半導體元件
本發明示例性實施例是有關於一種半導體元件,且更確切而言是有關於一種包括精細接墊結構的半導體元件。 [相關申請案的交叉參考]
本美國非臨時申請案依據35 U.S.C § 119主張2018年6月15日於韓國智慧財產局提出申請的韓國專利申請案第10-2018-0069195號的優先權,所述美國非臨時申請案的全部內容特此併入供參考。
緊湊尺寸這一發展趨勢要求以精細的間距排列半導體元件的連接端子。半導體元件可具有用於與其他半導體元件或印刷電路板進行電性連接的電性連接結構,諸如焊球或焊料凸塊。
本發明概念的一些示例性實施例提供一種具有連接至外部電子元件的接墊結構的半導體元件。
本發明概念的目標並不僅限於上文所提及的目標,且熟習此項技術者依據以下說明將清楚地理解上文未提及的其他目標。
根據本發明概念的一些示例性實施例,一種半導體元件可包括導電層、鈍化層及接墊結構。所述導電圖案可位於基板上。所述鈍化層可位於所述基板上且包括部分地暴露出所述導電圖案的開口。所述接墊結構位於所述鈍化層的所述開口中且連接至所述導電圖案。所述接墊結構可包括:第一金屬層,填充所述鈍化層的所述開口且具有較所述開口的寬度大的寬度;及第二金屬層,位於所述第一金屬層上。所述第一金屬層可在所述第一金屬層的外壁處具有第一厚度,在所述鈍化層的頂表面上具有第二厚度,且所述導電圖案的頂表面上具有第三厚度。所述第二厚度可大於所述第一厚度。所述第三厚度可大於所述第二厚度。
根據本發明概念的一些示例性實施例,一種半導體元件可包括導電圖案、鈍化層及接墊結構。所述導電圖案位於基板上。所述鈍化層位於所述基板上且包括部分地暴露出所述導電圖案的開口。所述接墊結構位於所述鈍化層的所述開口中且連接至所述導電圖案。所述接墊結構可包括:第一金屬層,填充所述鈍化層的所述開口;及第二金屬層,位於所述第一金屬層上。所述第一金屬層可包括位於所述鈍化層的所述開口中及所述開口上方的中心部分以及位於所述鈍化層上的邊緣部分。所述第一金屬層的頂表面可位於較所述鈍化層的頂表面的水平高度高的水平高度處。所述第一金屬層的所述邊緣部分可具有向上凸的頂表面。
根據本發明概念的一些示例性實施例,一種半導體元件可包括導電圖案、鈍化層及接墊結構。所述導電圖案位於基板上。所述鈍化層位於所述基板上且包括部分地暴露出所述導電圖案的開口。所述接墊結構位於所述鈍化層的所述開口中且連接至所述導電圖案。所述接墊結構可包括:第一金屬層,填充所述鈍化層的所述開口;第二金屬層,位於所述第一金屬層上。所述第一金屬層可包括位於所述開口中的中心部分及位於所述鈍化層上的邊緣部分。所述第一金屬層可具有位於較所述鈍化層的頂表面的水平高度高的水平高度處的頂表面。所述第一金屬層的所述頂表面可在所述邊緣部分處具有第一曲率且在所述中心部分處具有第二曲率。所述第二曲率可不同於所述第一曲率。
說明及圖式中包含其他示例性實施例的細節。
下文將結合所附圖式論述根據本發明概念的一些示例性實施例的一種半導體元件。
當用語「約」或「實質上」在本說明書中與數值結合使用時,意指相關聯數值圍繞所述數值包含±10%的容差。「高達」這一表達包含零至所表達上限以及零與上限之間的所有值的量。當規定範圍時,所述範圍包括其之間的所有值,諸如0.1%的增量。此外,當措辭「大致上」及「實質上」與幾何形狀結合使用時,意指對幾何形狀的精確性不作要求,而是所述形狀的涵蓋範圍(latitude)在本發明的範疇內。
圖1A說明部分地示出根據本發明概念的一些示例性實施例的半導體元件的剖視圖。圖1B說明示出圖1A所示剖面A的放大圖。
參考圖1A及圖1B,半導體元件可包括:導電圖案110,位於下部結構100上;鈍化層120,覆蓋導電圖案110;及接墊結構140,位於鈍化層120上且連接至導電圖案110。
下部結構100可包括:半導體積體電路,位於半導體基板上;電線;及介電層,覆蓋半導體積體電路及電線。
導電圖案110可安置於覆蓋半導體積體電路的最上部介電層上。導電圖案110可包含例如銅(Cu)、鋁(Al)、鎳(Ni)、銀(Ag)、金(Au)、鉑(Pt)、錫(Sn)、鉛(Pb)、鈦(Ti)、鉻(Cr)、鈀(Pd)、銦(In)、鋅(Zn)、碳(C)或其合金。導電圖案110可包括依序堆疊的障壁層、晶種層及金屬層。
在下部結構100上,鈍化層120可覆蓋導電圖案110且具有部分地暴露出導電圖案110的開口。鈍化層120的厚度T在下部結構100的頂表面上可較在導電圖案110的頂表面上大。另一選擇是,鈍化層120在下部結構100及導電圖案110上可具有實質上均勻的厚度。
鈍化層120可包括例如:無機介電層,諸如氧化矽層、氮化矽層及氮氧化矽層;或聚醯亞胺系介電層,諸如光敏聚醯亞胺(Photo Sensitive Polyimide,PSPI)層。
接墊結構140可安置於鈍化層120上,同時填充所述開口。接墊結構140可電性連接至導電圖案110。接墊結構140可具有最大寬度W2,最大寬度W2大於開口的最大寬度W1。
下部金屬圖案130可安置於接墊結構140與導電圖案110之間。下部金屬圖案130可具有實質上均勻的厚度。下部金屬圖案130可覆蓋導電圖案110的暴露於開口的頂表面,且亦覆蓋開口的側壁及鈍化層120的頂表面。下部金屬圖案130可包括依序堆疊的金屬障壁圖案132及金屬晶種圖案134。例如,金屬障壁圖案132可包含鈦、氮化鈦、鉭、氮化鉭、釕、鈷、錳、氮化鎢、鎳或硼化鎳。舉另一實例,金屬障壁圖案132可包括由鈦及氮化鈦組成的雙層、或者除所述雙層之外的混合物層。金屬晶種圖案134可包含例如銅(Cu)。
接墊結構140可具有與下部金屬圖案130的側壁在垂直方向上不對齊的側壁,且鈍化層120的頂表面與接墊結構140的底表面之間可界定底切(undercut)。
在一些示例性實施例中,接墊結構140可包括依序堆疊於下部金屬圖案130上的第一金屬層141、第二金屬層143及頂蓋金屬層145。接墊結構140可填充鈍化層120的開口,且可具有實質上平坦的頂表面。
第一金屬層141可填充鈍化層120的開口,且可具有位於較鈍化層120的頂表面的水平高度高的水平高度處的頂表面。例如,第一金屬層141可具有不平坦的頂表面。第一金屬層141可具有第二寬度W2,第二寬度W2大於鈍化層120的開口的第一寬度W1。
第一金屬層141可包括:中心部分P1,安置於鈍化層120的開口中及所述開口上方;及邊緣部分P2,安置於鈍化層120的頂表面上。第一金屬層141可具有實質上柱形狀,且邊緣部分P2可環繞中心部分P1。
第一金屬層141可包含第一金屬材料,例如銅(Cu)或銅合金。在本說明中,銅合金可意指混合有極小量的以下材料中的一種或多種的銅:C、Ag、Co、Ta、In、Sn、Zn、Mn、Ti、Mg、Cr、Ge、Sr、Pt、Mg、Al及Zr。
第一金屬層141在中心部分P1及邊緣部分P2處可具有不同的顆粒尺寸。在一些示例性實施例中,第一金屬層141在邊緣部分P2處的平均顆粒尺寸可小於在中心部分P1處的平均顆粒尺寸。
第一金屬層141可在中心部分P1處具有第一厚度T1,且在邊緣部分P2處具有第二厚度T2。第一厚度T1是中心部分P1的最小厚度。第二厚度T2是邊緣部分P2的最大厚度。第一厚度T1可大於位於導電圖案110上的鈍化層120的厚度T,且第二厚度T2可小於位於導電圖案110上的鈍化層120的厚度T。第一金屬層141在邊緣部分P2處的第二厚度T2可小於第一金屬層141在中心部分P1處的第一厚度T1。第一金屬層141更可在外壁處具有第三厚度T3,所述第三厚度T3小於第二厚度T2。例如,第一金屬層141可在邊緣部分P2處具有自約1.0至1.5微米範圍內的厚度,且在中心部分P1處具有約3.0至5.0微米範圍內的厚度。
第一金屬層141的中心部分P1可具有向下凸的頂表面S1,且第一金屬層141的邊緣部分P2可具有向上凸的頂表面S2。例如,第一金屬層141在中心部分P1處的頂表面S1與邊緣部分P2處的頂表面S2之間可具有水平高度差。中心部分P1處的頂表面S1與邊緣部分P2處的頂表面S2彼此可在相反的方向上彎曲。第一金屬層141的中心部分P1處的頂表面S1可具有第一曲率,且第一金屬層141的邊緣部分P2的頂表面S2可具有第二曲率,第二曲率不同於所述第一曲率。所述第二曲率可大於所述第一曲率。
在一些示例性實施例中,第一金屬層141的頂表面可在邊緣部分P2處具有頂部水平高度UL且在中心部分P1處具有底部水平高度LL。第一金屬層141的頂表面的頂部水平高度UL與底部水平高度LL之間的差d1可小於位於導電圖案110上的鈍化層120的厚度T。第一金屬層141在其外壁處可具有中間水平高度ML,所述中間水平高度ML介於頂部水平高度UL與底部水平高度LL之間,且因此,第一金屬層141的頂表面在邊緣部分P2處可具有中間水平高度ML。中間水平高度ML與頂部水平高度UL之間的差d2可小於頂部水平高度UL與底部水平高度LL之間的差d1。
第二金屬層143可具有與第一金屬層141的頂表面接觸的底表面。在此種情形中,第二金屬層143可具有不平坦的底表面。第二金屬層143可具有實質上平坦的頂表面。例如,第二金屬層143的頂表面可較第一金屬層141的頂表面平坦。
第二金屬層143可包含與第一金屬層141的第一金屬材料不同的第二金屬材料。第二金屬層143可包含例如鎳(Ni)。
第二金屬層143可在第一金屬層141的中心部分P1上具有第四厚度Ta或最大厚度,且在第一金屬層141的邊緣部分P2上具有第五厚度Tb或最小厚度。第二金屬層143的最小厚度Tb可大於與第一金屬層141的最大厚度對應的第一厚度T1。第二金屬層143可具有自約3.0至4.0微米範圍內的厚度。
第二金屬層143可具有與第一金屬層141的第二寬度W2實質上相同的第三寬度W3。第二金屬層143的外壁可與第一金屬層141的外壁在垂直方向上對齊。
頂蓋金屬層145可安置於第二金屬層143的頂表面上,且可包含與第一金屬層141及第二金屬層143各自的第一金屬材料及第二金屬材料不同的第三金屬材料。頂蓋金屬層145可包含例如金(Au)。
圖2及圖3說明部分地示出根據本發明概念的一些示例性實施例的半導體元件的剖視圖。為說明簡潔起見,可省略與上文參考圖1A及圖1B所論述的實施例的技術特徵相同的技術特徵。
參考圖2及圖3,接墊結構140可包括依序堆疊的第一金屬層141、第二金屬層143及頂蓋金屬層145,且如上文所論述,第一金屬層141可包括:中心部分P1,設置於鈍化層120的開口中及開口上方;及邊緣部分P2,安置於鈍化層120的頂表面上。
如圖2中所示,第一金屬層141的中心部分P1可具有實質上平坦的頂表面S1,且第一金屬層141的邊緣部分P2可具有向上凸的頂表面S2,所述向上凸的頂表面可以是圓滑的。第一金屬層141的外壁處的第三厚度T3可小於位於鈍化層120上的第一金屬層141的第二厚度T2。
如圖3中所示,第一金屬層141的中心部分P1處的頂表面S1可位於與鈍化層120的頂表面的水平高度相同或較鈍化層120的頂表面的水平高度低的水平高度處。第一金屬層141的邊緣部分P2可自第一金屬層141的第一部分P1延伸至鈍化層120的頂表面上。
圖4A說明示出根據本發明概念的一些示例性實施例的半導體元件的簡化平面圖。圖4B說明沿著圖4A所示線A-A'截取的簡化剖視圖,所述簡化剖視圖示出根據本發明概念的一些示例性實施例的半導體元件。
參考圖4A及圖4B,半導體元件1000可包括下部結構100、重佈線金屬圖案110、鈍化層120及接墊結構140。下部結構100可包括半導體基板10、層間介電層20、下部連接接墊40及外部連接端子50。
半導體基板10可具有面向彼此的第一表面10a與第二表面10b。半導體積體電路15可安置於半導體基板10的第一表面10a上。半導體積體電路15可包括例如記憶體組件、核心電路組件、周邊電路組件、邏輯電路組件、控制電路組件或其組合。
半導體基板10的第一表面10a上可設置有層間介電層20,層間介電層20覆蓋半導體積體電路15,且層間介電層20中可設置有內部電線22,內部電線22電性連接至半導體積體電路15。層間介電層20可具有單層結構或多層結構。
下部連接接墊40可排列於半導體元件1000的底表面上,且諸如焊球等外部連接端子50可附接至下部連接接墊40。
一個或多個介電層35可安置於半導體基板10的第二表面10b上,且重佈線金屬圖案110可安置於介電層35中的最上部介電層上。重佈線金屬圖案110可包含銅(Cu)、鋁(Al)、鎢(W)、鎳(Ni)、鈦(Ti)、氮化鈦(TiN)、鉭(Ta)、氮化鉭(TaN)、金(Au)或其組合。
下部結構100可包括在垂直方向上穿透半導體基板10的貫穿電極30。貫穿電極30可具有柱形狀,且可將設置於半導體基板10的第一表面10a上的內部電線22電性連接至設置於半導體基板10的第二表面10b上的重佈線金屬圖案110。
鈍化層120可覆蓋位於半導體基板10的第二表面10b上的重佈線金屬圖案110。如上文所論述,鈍化層120可包括部分地暴露出導電圖案(亦即,重佈線金屬圖案110)的開口。
接墊結構140可設置於鈍化層120的開口中。接墊結構140中的每一者可包括填充鈍化層120的開口的第一金屬層141,且亦包括位於第一金屬層141上的第二金屬層143。接墊結構140可具有實質上平坦的頂表面。
圖5說明示出包括根據本發明概念的一些示例性實施例的半導體元件的半導體封裝的剖視圖。
參考圖5,半導體封裝2000可包括封裝基板200、第一半導體晶片100a、第二半導體晶片100b及模塑層250。
封裝基板200可包括例如印刷電路板、撓性基板或條帶基板。封裝基板200可以是撓性印刷電路板、剛性印刷電路板、及撓性印刷電路板與剛性印刷電路板的組合中的一者,上述板中的每一者中形成有內部電線。
封裝基板200可具有面向彼此的頂表面與底表面,且可包括接合接墊212、外部連接接墊214及內部電線222。接合接墊212可排列於封裝基板200的頂表面上,且外部連接接墊214可排列於封裝基板200的底表面上。接合接墊212可通過內部電線222電性連接至外部連接接墊214。外部連接端子150可附接至外部連接接墊214。外部連接端子150可被排列成構成球柵陣列(Ball Grid Array,BGA)。
第一半導體晶片100a及第二半導體晶片100b可堆疊於封裝基板200上。第一半導體晶片100a及第二半導體晶片100b中的一者或多者可以是根據本發明概念的一些實施例的半導體元件,且可在其頂底表面及/或底表面上設置有上文所論述的接墊結構140。
第一半導體晶片100a及第二半導體晶片100b兩者皆可以是記憶體晶片或非記憶體晶片。另一選擇是,第一半導體晶片100a可以是非記憶體晶片,且第二半導體晶片100b可以是記憶體晶片。第一半導體晶片100a及第二半導體晶片100b可具有相同的尺寸或不同的尺寸。
第一半導體晶片100a可以是接合至封裝基板200的倒裝晶片(flip-chip)。第一半導體晶片100a可在其底表面上設置有下部連接接墊102且在其頂表面上設置有上文所論述的接墊結構140。
第一半導體晶片100a的下部連接接墊102可通過電性連接端子50a(諸如,導電凸塊或焊球)耦合至封裝基板200的接合接墊212。
鈍化層(未示出)可設置於第一半導體晶片100a上,且接墊結構140可設置於鈍化層的開口中。接墊結構140可通過內部電線及第一半導體晶片100a中的貫穿電極電性連接至下部連接接墊102。如上文所論述,接墊結構140中的每一者可包括填充鈍化層的開口的第一金屬層,且亦包括位於第一金屬層上的第二金屬層。
第二半導體晶片100b可在其底表面上具有下部連接接墊102,且可通過電性連接端子50b(諸如,導電凸塊或焊球)連接至第一半導體晶片100a的接墊結構140。
在一些示例性實施例中,由於第一半導體晶片100a的接墊結構140具有實質上平坦的頂表面,因此當將連接端子50b(諸如,焊球)附接至第一半導體晶片100a的接墊結構140時,可防止污染物質殘留於接墊結構140與連接端子50b之間。因此,可提高接墊結構140與連接端子50b之間的結構可靠性及電性可靠性。
>製作方法>
現在,以下內容將參考圖6至圖11闡述製作根據本發明概念的一些示例性實施例的半導體元件的方法。圖6至圖11說明示出製作根據本發明概念的一些示例性實施例的半導體元件的方法的剖視圖。
參考圖6,可在下部結構100上形成導電圖案110。儘管未示出,但下部結構100可包括:半導體基板;半導體積體電路,位於半導體基板上,半導體積體電路包括記憶體電路、邏輯電路或記憶體電路與邏輯電路的組合;以及堆疊介電層,覆蓋半導體積體電路。
可使用沈積製程、圖案化製程、電鍍製程或無電鍍製程來形成導電圖案110。導電圖案110可包含例如銅(Cu)、鋁(Al)、鎳(Ni)、銀(Ag)、金(Au)、鉑(Pt)、錫(Sn)、鉛(Pb)、鈦(Ti)、鉻(Cr)、鈀(Pd)、銦(In)、鋅(Zn)、碳(C)或其合金。
可在下部結構100上形成鈍化層120,且鈍化層120形成為具有部分地暴露出導電圖案110的頂表面的開口121。
例如,當鈍化層120是或包含聚醯亞胺系材料(諸如,光敏聚醯亞胺(PSPI))時,可執行旋轉塗佈製程以沈積鈍化層120,且無需單獨形成光阻劑層,可執行曝光製程以將鈍化層120圖案化來形成部分地暴露出導電圖案110的開口121。
舉另一實例,鈍化層120可由氧化矽層、氮化矽層或氮氧化矽層形成。可在鈍化層120上形成罩幕圖案(未示出),且然後部分地蝕刻所述罩幕圖案以形成部分地暴露出導電圖案110的開口121。
參考圖7,可在鈍化層120的表面上共形地沈積初步下部金屬層131及133。初步下部金屬層131及133在導電圖案110的頂表面上且在鈍化層120的表面上可具有實質上均勻的厚度。
形成初步下部金屬層131及133可包括依序沈積金屬障壁層131及金屬晶種層133。可使用物理氣相沈積(Physical Vapor Deposition,PVD)、化學氣相沈積(Chemical Vapor Deposition,CVD)或原子層沈積(Atomic Layer Deposition,ALD)來形成金屬障壁層131及金屬晶種層133。例如,金屬障壁層131可包含鈦、氮化鈦、鉭、氮化鉭、釕、鈷、錳、氮化鎢、鎳或硼化鎳。舉另一實例,金屬障壁層131可包括由鈦及氮化鈦組成的雙層、或者除所述雙層之外的混合物層。金屬晶種層133可包含例如銅(Cu)。
可在初步下部金屬層131及133上形成具有開口MP_O的罩幕圖案MP。罩幕圖案MP的開口MP_O可形成為與鈍化層120的開口121對應。罩幕圖案MP的開口MP_O可具有較鈍化層120的開口121的最大寬度大的最大寬度,且可部分地暴露出鈍化層120的頂表面。
形成罩幕圖案MP可包括塗佈光阻劑層(未示出),及使用光微影製程來將所述光阻劑層圖案化。
參考圖8,可在罩幕圖案MP的開口MP_O中及所述開口MP_O上方形成第一金屬層141。可藉由執行第一電鍍製程(諸如,直流(Direct Current,DC)電鍍或脈衝電鍍)來形成第一金屬層141。
第一金屬層141可由來自金屬晶種層133的表面的金屬材料形成且可部分地填充罩幕圖案MP的開口MP_O,所述表面暴露於罩幕圖案MP的開口MP_O。自開口MP_O的底面形成的第一金屬層141可具有圓柱形柱形狀、矩形柱形狀或正方形柱形狀。
第一電鍍製程可使用鍍銅溶液。所述鍍銅溶液可添加有添加劑A1及A2,在執行第一電鍍製程時,所述添加劑A1及A2對用於罩幕圖案MP的開口MP_O中的每一區的金屬材料的鍍覆速率進行控制。
例如,當將基板設置至含有銅離子(Cu2+ 或Cu+ )的電解質溶液中時,且當對用作陽極的目標(純銅)及用作陰極的基板施加電力時,源自所述目標的銅離子(Cu2+ 或Cu+ )可經由電解質溶液朝向基板遷移,此可使得第一金屬層141形成於金屬晶種層133上。第一電鍍製程的電流強度可根據被執行鍍覆的基板的表面輪廓而定。
當執行第一電鍍製程以形成第一金屬層141時,金屬材料可自金屬晶種層133的表面生長,且在鈍化層120的開口121中與在鄰近罩幕圖案MP的開口MP_O的內壁的位置中之間可存在鍍覆速率差。
例如,形成第一金屬層141的第一電鍍製程所使用的鍍銅溶液中可包含電解質溶液、加速劑A1及抑制劑A2。電解質溶液可含有可溶於水的銅鹽,加速劑A1可加速銅還原反應,且抑制劑A2可在電荷密度高的位點處局部地抑制銅還原反應。
加速劑A1可包含分子量小於抑制劑A2的分子量的材料,且抑制劑A2可在電鍍製程期間是帶電荷的。舉例來說,加速劑A1可包含SPS(雙(3-磺丙基)二硫化物)、MPSA(3-巰基-1-丙烷磺酸)或DPS(3-N,N-二甲基胺基二硫代胺甲醯基-1-丙烷磺酸(3-N,N-dimethylamonodithiocarbamoy-1-propanesulfonic acid))。舉例來說,抑制劑A2可包含聚合物系有機化合物,諸如聚乙二醇(PEG)或聚乙二醇-聚丙二醇(polyethylene glycol-polypropylene glycol,PEG-PPG)共聚物。
當執行第一電鍍製程時,金屬晶種層133的表面形狀的差異可致使在鈍化層120的開口121中電流密度增大。在此種情形中,當執行第一電鍍製程時,相比於在罩幕圖案MP的開口MP_O的邊緣區上,電流可集中於中心區上,且因此,具有低分子量的加速劑A1可積聚於罩幕圖案MP的開口MP_O的中心區上。然後,第一金屬層141的鍍覆速率在罩幕圖案MP的開口MP_O的中心區處可提高。因此,可在鈍化層120的開口121的內部處開始填充金屬材料。
當執行第一電鍍製程時,電流可集中於鈍化層120的頂表面與罩幕圖案MP的開口MP_O的內壁之間的隅角區上,且因此,具有電荷及高分子量的抑制劑A2可積聚於罩幕圖案MP的開口MP_O的隅角區上。然後,第一金屬層141的鍍覆速率在罩幕圖案MP的開口MP_O的隅角區處可減小。
加速劑A1及抑制劑A2可使得第一金屬層141在鈍化層120的開口121中的金屬晶種層133上可較在鈍化層120的頂表面上的金屬晶種層133上更快得形成。在此種情形中,第一金屬層141的厚度在鈍化層120的頂表面上可較在鈍化層120的開口121中及開口121上方小。因此,第一金屬層141的頂表面的水平高度差可小於鈍化層120的厚度。
在形成第一金屬層141的第一電鍍製程中,加速劑A1及抑制劑A2中的每一者可根據罩幕圖案MP的開口MP_O中的各個區而具有不同的密度,且因此第一金屬層141的平均顆粒尺寸可根據罩幕圖案MP的開口MP_O中的所述各個區而改變。例如,第一金屬層141的平均顆粒尺寸在抑制劑A2具有高密度的區(例如,開口MP_O的邊緣區)處可減小。
參考圖9,罩幕圖案MP的開口MP_O可部分地填充有藉由第一電鍍製程形成的第一金屬層141,且第一金屬層141可具有位於較鈍化層120的頂表面的水平高度高的水平高度處的頂表面。由於抑制劑A2集中於第一金屬層141與罩幕圖案MP的開口MP_O的內壁之間的隅角區上,因此第一金屬層141可在其鄰近罩幕圖案MP的開口MP_O的內壁的頂表面上向上凸。例如,如上文參考圖1A及圖1B所論述,第一金屬層141的頂表面可包括向下凸表面S1及向上凸表面S2。
如上文所論述,第一金屬層141的外壁可與罩幕圖案MP的開口MP_O的內壁接觸,且可具有較位於鈍化層120的頂表面上的第一金屬層141的厚度小的厚度。
參考圖10,可執行第二電鍍製程以在第一金屬層141上形成第二金屬層143。直流(DC)電鍍或脈衝電鍍可用作所述第二電鍍製程,且所述第二電鍍製程可使用鍍鎳溶液。
可在第一金屬層141的頂表面處開始填充第二金屬層143。由於第一金屬層141的頂表面的水平高度差小於鈍化層120的厚度,因此第二金屬層143可具有較第一金屬層141的頂表面平坦的頂表面。第二金屬層143可具有較第一金屬層141的厚度大的厚度。
可執行第三電鍍製程以在第二金屬層143上形成頂蓋金屬層145。在形成頂蓋金屬層145之後,可移除罩幕圖案MP,如圖11中所示。當罩幕圖案MP由光阻劑層形成時,可藉由包括灰化步驟及清洗步驟的剝離製程來移除罩幕圖案MP。移除罩幕圖案MP可暴露出第一金屬層141的外壁、第二金屬層143的外壁及頂蓋金屬層145的外壁,且亦暴露出位於罩幕圖案MP之下的金屬晶種層133。
可對金屬晶種層133及金屬障壁層131執行蝕刻製程,且因此可形成金屬晶種圖案134及金屬障壁圖案132。當蝕刻金屬晶種層133及金屬障壁層131時,可在鈍化層120的頂表面與第一金屬層141的底表面之間形成底切。
根據本發明概念的一些實施例,電性連接至外部電子元件的接墊結構可具有實質上平坦的頂表面。於是,可減少雜質在接墊結構的表面上的出現。因此,當半導體元件通過附接於接墊結構的表面上的焊球或凸塊連接至外部元件時,可提高半導體元件與外部元件之間的結構可靠性及電性連接可靠性。
儘管已結合所附圖式中所說明的本發明概念的一些示例性實施例闡述了本發明,但熟習此項技術者應理解,可在不背離本發明概念的技術精神及重要特徵的情況下做出各種改變及潤飾。熟習此項技術者應明瞭,可在不背離本發明概念的範疇及精神的情況下做出各種替代、潤飾及改變。
10‧‧‧半導體基板 10a‧‧‧第一表面 10b‧‧‧第二表面 15‧‧‧半導體積體電路 20‧‧‧層間介電層 22、222‧‧‧內部電線 30‧‧‧貫穿電極 35‧‧‧介電層 40、102‧‧‧下部連接接墊 50、150‧‧‧外部連接端子 50a‧‧‧電性連接端子 50b‧‧‧電性連接端子/連接端子 100‧‧‧下部結構 100a‧‧‧第一半導體晶片 100b‧‧‧第二半導體晶片 110‧‧‧導電圖案/重佈線金屬圖案 120‧‧‧鈍化層 121‧‧‧開口 130‧‧‧下部金屬圖案 131‧‧‧初步下部金屬層/金屬障壁層 132‧‧‧金屬障壁圖案 133‧‧‧初步下部金屬層/金屬晶種層 134‧‧‧金屬晶種圖案 140‧‧‧接墊結構 141‧‧‧第一金屬層 143‧‧‧第二金屬層 145‧‧‧頂蓋金屬層 200‧‧‧封裝基板 212‧‧‧接合接墊 214‧‧‧外部連接接墊 250‧‧‧模塑層 1000‧‧‧半導體元件 2000‧‧‧半導體封裝 A‧‧‧剖面 A1‧‧‧添加劑/加速劑 A2‧‧‧添加劑/抑制劑 d1、d2‧‧‧差 LL‧‧‧底部水平高度 ML‧‧‧中間水平高度 MP‧‧‧罩幕圖案 MP_O‧‧‧開口 P1‧‧‧中心部分 P2‧‧‧邊緣部分 S1‧‧‧頂表面/表面 S2‧‧‧頂表面/表面 T‧‧‧厚度 T1‧‧‧第一厚度 T2‧‧‧第二厚度 T3‧‧‧第三厚度 Ta‧‧‧第四厚度 Tb‧‧‧第五厚度/最小厚度 UL‧‧‧頂部水平高度 W1‧‧‧最大寬度/第一寬度 W2‧‧‧最大寬度/第二寬度 I-I'‧‧‧線
圖1A說明部分地示出根據本發明概念的一些示例性實施例的半導體元件的剖視圖。
圖1B說明示出圖1A所示剖面A的放大圖。
圖2及圖3說明部分地示出根據本發明概念的一些示例性實施例的半導體元件的剖視圖。
圖4A說明示出根據本發明概念的一些示例性實施例的半導體元件的簡化平面圖。
圖4B說明沿著圖4A所示線A-A'截取的簡化剖視圖,所述簡化剖視圖示出根據本發明概念的一些示例性實施例的半導體元件。
圖5說明示出包括根據本發明概念的一些示例性實施例的半導體元件的半導體封裝的剖視圖。
圖6至圖11說明示出製作根據本發明概念的一些示例性實施例的半導體元件的方法的剖視圖。
100‧‧‧下部結構
110‧‧‧導電圖案/重佈線金屬圖案
120‧‧‧鈍化層
130‧‧‧下部金屬圖案
132‧‧‧金屬障壁圖案
134‧‧‧金屬晶種圖案
140‧‧‧接墊結構
141‧‧‧第一金屬層
143‧‧‧第二金屬層
145‧‧‧頂蓋金屬層
A‧‧‧剖面
P1‧‧‧中心部分
P2‧‧‧邊緣部分
T‧‧‧厚度
T1‧‧‧第一厚度
T2‧‧‧第二厚度
T3‧‧‧第三厚度
Ta‧‧‧第四厚度
Tb‧‧‧第五厚度/最小厚度
W1‧‧‧最大寬度/第一寬度
W2‧‧‧最大寬度/第二寬度

Claims (20)

  1. 一種半導體元件,包括: 導電圖案,位於基板上; 鈍化層,位於所述基板上且包括部分地暴露出所述導電圖案的開口;以及 接墊結構,位於所述鈍化層的所述開口中且連接至所述導電圖案,所述接墊結構包括第一金屬層及第二金屬層,所述第一金屬層填充所述鈍化層的所述開口,所述第一金屬層具有較所述開口的寬度大的寬度,所述第二金屬層位於所述第一金屬層上,所述第一金屬層在所述第一金屬層的外壁處具有第一厚度,所述第一金屬層在所述鈍化層的頂表面上具有第二厚度,且所述第一金屬層在所述導電圖案的頂表面上具有第三厚度,所述第二厚度大於所述第一厚度,且所述第三厚度大於所述第二厚度。
  2. 如申請專利範圍第1項所述的半導體元件,其中所述鈍化層的厚度小於所述第三厚度。
  3. 如申請專利範圍第1項所述的半導體元件,其中 所述第一金屬層包括位於所述鈍化層的所述開口中及所述開口上方的中心部分以及位於所述鈍化層上的邊緣部分, 所述第一金屬層的頂表面在所述邊緣部分處具有頂部水平高度,且在所述中心部分處具有底部水平高度, 所述頂部水平高度與所述底部水平高度之間的差小於位於所述導電圖案上的所述鈍化層的厚度,且 所述第一金屬層的所述外壁的頂端位於所述頂部水平高度與所述底部水平高度之間。
  4. 如申請專利範圍第1項所述的半導體元件,其中 所述第一金屬層包括: 中心部分,位於所述鈍化層的所述開口中及所述開口上方,以及 邊緣部分,位於所述鈍化層上,所述第一金屬層的所述邊緣部分具有向上的圓滑頂表面,且 所述第二金屬層具有與所述第一金屬層的頂部接觸的不平坦底表面且具有平坦頂表面,所述第二金屬層具有較所述第三厚度大的厚度。
  5. 如申請專利範圍第1項所述的半導體元件,其中 所述第一金屬層包括: 中心部分,位於所述鈍化層的所述開口中及所述開口上方,以及 邊緣部分,位於所述鈍化層上, 所述第一金屬層包含金屬材料,所述金屬材料的平均顆粒尺寸在所述邊緣部分處較在所述中心部分處小。
  6. 如申請專利範圍第1項所述的半導體元件,其中 所述第一金屬層包含第一金屬材料,且 所述第二金屬層包含與所述第一金屬材料不同的第二金屬材料。
  7. 如申請專利範圍第1項所述的半導體元件,其中所述接墊結構更包括: 障壁圖案,位於所述第一金屬層與所述導電圖案之間;以及 晶種圖案,位於所述障壁圖案與所述第一金屬層之間。
  8. 一種半導體元件,包括: 導電圖案,位於基板上; 鈍化層,位於所述基板上,所述鈍化層包括部分地暴露出所述導電圖案的開口;以及 接墊結構,位於所述鈍化層的所述開口中及所述開口上方且連接至所述導電圖案,所述接墊結構包括第一金屬層及第二金屬層,所述第一金屬層填充所述鈍化層的所述開口,所述第二金屬層位於所述第一金屬層上,所述第一金屬層包括位於所述鈍化層的所述開口中及所述開口上方的中心部分以及位於所述鈍化層上的邊緣部分,所述第一金屬層的頂表面位於較所述鈍化層的頂表面的水平高度高的水平高度處,且所述第一金屬層的所述邊緣部分具有向上凸的頂表面。
  9. 如申請專利範圍第8項所述的半導體元件,其中 所述第一金屬層在所述中心部分處具有最大厚度,且 所述最大厚度大於位於所述導電圖案上的所述鈍化層的厚度。
  10. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層在所述中心部分的頂表面與所述邊緣部分的頂表面之間具有水平高度差, 所述第二金屬層的頂表面具有平坦頂表面,且 所述第二金屬層在所述第一金屬層的所述中心部分上具有第一厚度且在所述第一金屬層的所述邊緣部分上具有第二厚度,所述第二厚度小於所述第一厚度。
  11. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層的所述頂表面在所述邊緣部分處具有第一曲率且在所述中心部分處具有第二曲率,所述第二曲率小於所述第一曲率。
  12. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層的所述中心部分具有向下凸的頂表面。
  13. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層在所述邊緣部分處具有第一厚度且在所述中心部分處具有第二厚度,所述第二厚度大於所述第一厚度且小於所述第二金屬層的厚度。
  14. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層包含金屬材料, 其中所述金屬材料的平均顆粒尺寸在所述邊緣部分處較所述中心部分處小。
  15. 如申請專利範圍第8項所述的半導體元件,其中 所述鈍化層的所述開口具有第一寬度,所述第一金屬層具有第二寬度,所述第二金屬層具有第三寬度,且所述第二寬度及所述第三寬度中的每一者皆大於所述第一寬度。
  16. 如申請專利範圍第8項所述的半導體元件,其中所述第一金屬層的最大寬度與所述第二金屬層的最大寬度相同。
  17. 一種半導體元件,包括: 導電圖案,位於基板上; 鈍化層,位於所述基板上且包括部分地暴露出所述導電圖案的開口;以及 接墊結構,位於所述鈍化層的所述開口中且連接至所述導電圖案,其中所述接墊結構包括第一金屬層及第二金屬層,所述第一金屬層填充所述鈍化層的所述開口,所述第二金屬層位於所述第一金屬層上,所述第一金屬層包括位於所述開口中及所述開口上方的中心部分以及位於所述鈍化層上的邊緣部分,所述第一金屬層具有位於較所述鈍化層的頂表面的水平高度高的水平高度處的頂表面,所述第一金屬層的所述頂表面在所述邊緣部分處具有第一曲率且在所述中心部分處具有第二曲率,所述第二曲率不同於所述第一曲率。
  18. 如申請專利範圍第17項所述的半導體元件,其中 所述第一金屬層的所述頂表面在所述中心部分與所述邊緣部分之間具有水平高度差, 所述水平高度差小於位於所述導電圖案的頂表面上的所述鈍化層的厚度,且 所述第一金屬層的所述頂表面在所述邊緣部分處向上凸且在所述中心部分處向下凸。
  19. 如申請專利範圍第17項所述的半導體元件,其中所述第一金屬層包含金屬材料, 其中所述金屬材料的平均顆粒尺寸在所述邊緣部分中較在所述中心部分中小。
  20. 如申請專利範圍第17項所述的半導體元件,其中所述第一金屬層與所述第二金屬層彼此包含不同的金屬材料。
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