TWI774218B - 金屬凸塊結構及其製作方法與驅動基板 - Google Patents

金屬凸塊結構及其製作方法與驅動基板 Download PDF

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TWI774218B
TWI774218B TW110103177A TW110103177A TWI774218B TW I774218 B TWI774218 B TW I774218B TW 110103177 A TW110103177 A TW 110103177A TW 110103177 A TW110103177 A TW 110103177A TW I774218 B TWI774218 B TW I774218B
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Taiwan
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metal bump
driving substrate
pad
metal
insulating layer
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TW110103177A
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TW202231151A (zh
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曾子章
陳銘如
羅正中
王金勝
唐偉森
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欣興電子股份有限公司
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Priority to TW110103177A priority Critical patent/TWI774218B/zh
Priority to US17/200,922 priority patent/US11715715B2/en
Publication of TW202231151A publication Critical patent/TW202231151A/zh
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    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
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Abstract

一種金屬凸塊結構的製作方法。提供一驅動基材。驅動基材上已形成有至少一接墊以及一絕緣層。接墊形成於驅動基材的一配置面上且具有一上表面。絕緣層覆蓋驅動基材的配置面與接墊且暴露出接墊的部分上表面。形成一圖案化金屬層於絕緣層所暴露出的接墊的上表面上且延伸覆蓋部分絕緣層。進行一化學鍍程序，以於圖案化金屬層上形成至少一金屬凸塊。金屬凸塊的一第一延伸方向垂直於驅動基材的一第二延伸方向。

Description

金屬凸塊結構及其製作方法與驅動基板
本發明是有關於一種凸塊結構及其製作方法與基板，且特別是有關於一種金屬凸塊結構及其製作方法與具有此金屬凸塊結構的驅動基板。
目前主動式驅動(AM Driving)的微型發光二極體顯示器(Micro LED Display)，大都是使用薄膜電晶體(Thin Film Transistor,TFT)玻璃基板來驅動發光二極體。然而，薄膜電晶體為薄膜製程，其上的金屬導線與發光區(pixel area)的銦錫氧化物(Indium Tin Oxide,ITO)僅為奈米級，因此當發光二極體或表面黏著元件(Surface Mount Device,SMD)要焊接(Solder Bonding)在銦錫氧化物導電層上面時，無法形成可靠的介面金屬化合物(Intermetallic Compound，IMC)而黏接在一起。為了解決上述的問題，目前是採用電鍍(Electrodeplating)的方式在銦錫氧化物 導電層上形成一層厚銅。然而，電鍍厚銅的製程冗長複雜，除了會增加製造的費用之外，因為是濕式製程，也容易造成環境汙染。
本發明提供一種金屬凸塊結構及其製作方法，其具有製程簡單、低成本且不會造成環境汙染等優勢。
本發明更提供一種驅動基板，包括上述的金屬凸塊結構，可具有較佳的結構可靠度。
本發明的金屬凸塊結構的製作方法，其包括以下步驟。提供一驅動基材。驅動基材上已形成有至少一接墊以及一絕緣層。接墊形成於驅動基材的一配置面上且具有一上表面。絕緣層覆蓋驅動基材的配置面與接墊且暴露出接墊的部分上表面。形成一圖案化金屬層於絕緣層所暴露出的接墊的上表面上且延伸覆蓋部分絕緣層。進行一化學鍍(Electrodeless Plating,ELP)程序，以於圖案化金屬層上形成至少一金屬凸塊。金屬凸塊的一第一延伸方向垂直於驅動基材的一第二延伸方向。
在本發明的一實施例中，上述的形成圖案化金屬層的步驟，包括形成一催化劑層於絕緣層以及絕緣層所暴露出的接墊的上表面上。對催化劑層進行一活化程序與一圖案化程序，而形成圖案化金屬層。
在本發明的一實施例中，上述的形成催化劑層的方法包括一噴墨印刷(Inkjet Printing)法。
在本發明的一實施例中，上述的催化劑層的材質包括奈米鈀(Nano-Pd)，或任何可還原化學銅的奈米金屬例如奈米金或奈米銀。
在本發明的一實施例中，上述的活化程序包括一雷射活化(Laser Activation)程序或一加熱程序。
在本發明的一實施例中，上述的圖案化金屬層的材質包括鈀、金或銀。
在本發明的一實施例中，上述的金屬凸塊的材質包括銅、金、錫或鎳。
在本發明的一實施例中，上述的金屬凸塊的剖面形狀包括類圓形或矩形。
在本發明的一實施例中，上述的接墊的材質包括銦錫氧化物(Indium Tin Oxide,ITO)，或任何濺鍍的金屬層例如鈦、銅、鉬、鋁或鉻。
在本發明的一實施例中，上述的金屬凸塊的厚度介於1微米至10微米之間。
本發明的金屬凸塊結構，配置於一驅動基材上。驅動基材上配置有一接墊以及一絕緣層。接墊配置於驅動基材的一配置面上且具有一上表面。絕緣層覆蓋驅動基材的配置面與接墊且暴露出接墊的部分上表面。金屬凸塊結構包括一圖案化金屬層以及一金屬凸塊。圖案化金屬層配置於絕緣層所暴露出的接墊的上表面上且延伸覆蓋部分絕緣層。金屬凸塊配置於圖案化金屬層上， 其中金屬凸塊的一第一延伸方向垂直於驅動基材的一第二延伸方向。
在本發明的一實施例中，上述的圖案化金屬層的材質包括鈀，或任何可還原化學銅的奈米金屬例如金、銀。
在本發明的一實施例中，上述的金屬凸塊的材質包括銅、金、錫或鎳。
在本發明的一實施例中，上述的金屬凸塊的剖面形狀包括類圓形或矩形。
在本發明的一實施例中，上述的金屬凸塊的厚度介於1微米至10微米之間。
本發明的驅動基板，其包括一驅動基材、至少一主動元件、至少一接墊、一絕緣層以及至少一金屬凸塊結構。驅動基材具有一配置面。主動元件配置於驅動基材的配置面上。接墊配置於驅動基材的配置面上，且具有一上表面。絕緣層覆蓋驅動基材的配置面、主動元件以及接墊，且絕緣層暴露出接墊的部分上表面。金屬凸塊結構包括一圖案化金屬層以及一金屬凸塊。圖案化金屬層配置於絕緣層所暴露出的接墊的上表面上且延伸覆蓋部分絕緣層。金屬凸塊配置於圖案化金屬層上。金屬凸塊的一第一延伸方向垂直於驅動基材的一第二延伸方向。
在本發明的一實施例中，上述的圖案化金屬層的材質包括鈀，而金屬凸塊的材質包括銅、金、錫或鎳。
在本發明的一實施例中，上述的金屬凸塊的剖面形狀包 括類圓形或矩形。
在本發明的一實施例中，上述的金屬凸塊的厚度介於1微米至10微米之間。
在本發明的一實施例中，上述的接墊的材質包括銦錫氧化物，或任何濺鍍的金屬層例如鈦、銅、鉬、鋁或鉻。
基於上述，在本發明的金屬凸塊結構的製作方法中，是透過化學鍍程序來形成金屬凸塊。相較於現有以濕式製程的電鍍程序來形成金屬凸塊而言，本發明採乾式製程來形成金屬凸塊，可具有製程簡單、低成本且不會造成環境汙染等優勢。此外，採用本發明的金屬凸塊結構的驅動基板，於後續接合發光元件時，發光元件可與金屬凸塊結構之間可形成良好介面金屬化合物，可具有較佳的結構可靠度。
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
100:驅動基板
110:驅動基材
112:配置面
120:接墊
122:上表面
130:絕緣層
140:主動元件
200a、200b:金屬凸塊結構
210:圖案化金屬層
210a:催化劑層
220a、220b:金屬凸塊
222:上表面
300:發光元件
D1:第一延伸方向
D2:第二延伸方向
T:厚度
圖1A至圖1D是依照本發明的一實施例的一種金屬凸塊結構的製作方法的剖面示意圖。
圖2繪示為本發明的另一實施例的一種金屬凸塊結構的剖面示意圖。
圖3A繪示為本發明的一實施例的一種驅動基板的剖面示意 圖。
圖3B繪示為在圖3A的驅動基板上配置一發光元件的剖面示意圖。
圖1A至圖1D是依照本發明的一實施例的一種金屬凸塊結構的製作方法的剖面示意圖。請先參考圖1A，關於本實施例的金屬凸塊結構的製作方法，首先，提供一驅動基材110。驅動基材110上已形成有至少一接墊(示意地繪示兩個接墊120)以及一絕緣層130。接墊120形成於驅動基材110的一配置面112上且具有一上表面122。絕緣層130覆蓋驅動基材110的配置面112與接墊120且暴露出接墊120的部分上表面122。此處，驅動基材110例如是一薄膜電晶體(TFT)玻璃基板，而接墊120的材質例如是銦錫氧化物，或任何濺鍍的金屬層例如鈦、銅、鉬、鋁或鉻。意即，接墊120與驅動基材110上的畫素電極屬於同一層，皆採用銦錫氧化物來製作。
接著，請先參考圖1C，形成一圖案化金屬層210於絕緣層130所暴露出的接墊120的上表面122上且延伸覆蓋部分絕緣層130。詳細來說，形成圖案化金屬層210的步驟，請參考圖1B，形成一催化劑層210a於絕緣層130以及絕緣層130所暴露出的接墊120的上表面122上。催化劑層210a於驅動基材110上的正投影大於對應的接墊120於驅動基材110上的正投影。此處，形成 催化劑層210a的方法例如是一噴墨印刷法，而催化劑層210a的材質例如是奈米鈀，或任何可還原化學銅的奈米金屬例如奈米金或奈米銀。
之後，請再同時參考圖1B與圖1C，對催化劑層210a進行一活化程序與一圖案化程序，而形成圖案化金屬層210。圖案化金屬層210於驅動基材110上的正投影小於對應的接墊120於驅動基材110上的正投影。此處，活化程序例如是一雷射活化程序或一加熱程序。若採用奈米鈀(此為離子態)來做為催化劑層210a，則經由活化後的催化劑層210a可形成金屬鈀，之後，經由圖案化程序此金屬鈀，則可形成圖案化金屬層210。因此，本實施例的圖案化金屬層的材質具體化為鈀，或任何可還原化學銅的奈米金屬例如金或銀。
最後，請參考圖1D，進行一化學鍍程序，以於圖案化金屬層210上形成至少一金屬凸塊(示意地繪示兩個金屬凸塊220a)。化學鍍的機制是透過氧化還原反應，具有較低的成本，且生產時間短，可依據需求而選擇性地成長成所需的形狀。金屬凸塊220a的一第一延伸方向D1垂直於驅動基材110的一第二延伸方向D2。此處，金屬凸塊220a的材質例如是銅、金或鎳。金屬凸塊220a的剖面形狀例如是矩形，且金屬凸塊220a的厚度T例如介於1微米至10微米之間。至此，已完成金屬凸塊結構200a的製作。
在結構上，請再參考圖1D，金屬凸塊結構200a配置於 驅動基材110上。驅動基材110上配置有接墊120以及絕緣層130。接墊120配置於驅動基材110的配置面112上且具有上表面122。絕緣層130覆蓋驅動基材110的配置面112與接墊120且暴露出接墊120的部分上表面122。金屬凸塊結構200a包括圖案化金屬層210以及金屬凸塊220a。圖案化金屬層210配置於絕緣層130所暴露出的接墊120的上表面122上且延伸覆蓋部分絕緣層130，其中圖案化金屬層210的材質例如是鈀，或任何可還原化學銅的奈米金屬例如金或銀。金屬凸塊220a配置於圖案化金屬層210上，其中金屬凸塊220a的第一延伸方向D1垂直於驅動基材110的第二延伸方向D2。此處，金屬凸塊220a的材質例如是銅、金或鎳，而金屬凸塊220a的剖面形狀例如是矩形，且金屬凸塊220a的厚度T介於1微米至10微米之間。
由於本實施例是透過化學鍍程序來形成金屬凸塊220a，因此相較於現有以濕式製程的電鍍程序來形成金屬凸塊而言，本實施例的金屬凸塊結構200a因採乾式製程來形成金屬凸塊220a，可具有製程簡單、低成本且不會造成環境汙染等優勢。
在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。
圖2繪示為本發明的另一實施例的一種金屬凸塊結構的 剖面示意圖。請同時參考圖1D與圖2，本實施例的金屬凸塊結構200b與上述的金屬凸塊結構200a相似，兩者的差異在於：在本實施例中，金屬凸塊結構200b的金屬凸塊220b的剖面形狀具體化為類圓形。換言之，可進一步將金屬凸塊結構200a透過高溫回火(reflow)的程序，形成所需的金屬凸塊220b的形狀。
圖3A繪示為本發明的一實施例的一種驅動基板的剖面示意圖。圖3B繪示為在圖3A的驅動基板上配置一發光元件的剖面示意圖。請先參考圖3A，在本實施例中，驅動基板100包括驅動基材110、至少一接墊(示意地繪示兩個接墊120)、絕緣層130、至少一主動元件(示意地繪示一個主動元件140)以及至少一金屬凸塊結構(示意地繪示兩個金屬凸塊結構200a)。驅動基材110具有配置面112，其中驅動基材110例如是一薄膜電晶體(TFF)玻璃基板。主動元件140配置於驅動基材110的配置面112上，其中主動元件140例如是薄膜電晶體，但不以此為限。接墊120配置於驅動基材110的配置面112上，且具有一上表面122，其中接墊120的材質例如是銦錫氧化物，或任何濺鍍的金屬層例如鈦、銅、鉬、鋁或鉻。意即，接墊120與驅動基材110上的畫素電極屬於同一層，皆採用銦錫氧化物來製作。絕緣層130覆蓋驅動基材110的配置面112、主動元件140以及接墊120，且絕緣層130暴露出接墊120的部分上表面122。金屬凸塊結構200a包括圖案化金屬層210以及金屬凸塊220a。圖案化金屬層210配置於絕緣層130所暴露出的接墊120的上表面122上且延伸覆蓋部分絕緣 層130。金屬凸塊220a配置於圖案化金屬層210上。金屬凸塊220a的第一延伸方向D1垂直於驅動基材110的第二延伸方向D2。
請參考圖3B，發光元件300適於配置於驅動基板100上，而與驅動基板100形成一顯示器，其中發光元件300配置於金屬凸塊結構200a的金屬凸塊220a上。進一步來說，發光元件300例如是微型發光二極體，其中每一發光元件300是以覆晶的方式接合在驅動基板100的兩個金屬凸塊結構200a上。發光元件300結構性且電性連接至金屬凸塊220a的上表面222，且透過金屬凸塊220a及圖案化金屬層210與接墊120電性連接。由於本實施例是採用化學鍍程序來形成具有一定厚度的金屬凸塊220a，因此當發光元件300與金屬凸塊結構200a焊接時，發光元件300與金屬凸塊結構200a之間可形成良好介面金屬化合物，因而可具有較佳的結構可靠度。
綜上所述，在本發明的金屬凸塊結構的製作方法中，是透過化學鍍程序來形成金屬凸塊。相較於現有以濕式製程的電鍍程序來形成金屬凸塊而言，本發明採乾式製程來形成金屬凸塊，可具有製程簡單、低成本且不會造成環境汙染等優勢。此外，採用本發明的金屬凸塊結構的驅動基板，於後續接合發光元件時，發光元件可與金屬凸塊結構之間可形成良好介面金屬化合物，可具有較佳的結構可靠度。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的 精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
110:驅動基材 112:配置面 120:接墊 122:上表面 130:絕緣層 200a:金屬凸塊結構 210:圖案化金屬層 220a:金屬凸塊 D1:第一延伸方向 D2:第二延伸方向 T:厚度

Claims (20)

  1. 一種金屬凸塊結構的製作方法，包括：提供一驅動基材，該驅動基材上已形成有至少一接墊以及一絕緣層，該至少一接墊形成於該驅動基材的一配置面上且具有一上表面，而該絕緣層覆蓋該驅動基材的該配置面與該至少一接墊且暴露出該至少一接墊的部分該上表面；形成一圖案化金屬層於該絕緣層所暴露出的該至少一接墊的該上表面上且延伸覆蓋部分該絕緣層；以及進行一化學鍍程序，以於該圖案化金屬層上形成至少一金屬凸塊，其中該至少一金屬凸塊的一第一延伸方向垂直於該驅動基材的一第二延伸方向。
  2. 如請求項1所述的金屬凸塊結構的製作方法，其中該形成該圖案化金屬層的步驟，包括：形成一催化劑層於該絕緣層以及該絕緣層所暴露出的該至少一接墊的該上表面上；以及對該催化劑層進行一活化程序與一圖案化程序，而形成該圖案化金屬層。
  3. 如請求項2所述的金屬凸塊結構的製作方法，其中形成該催化劑層的方法包括一噴墨印刷法。
  4. 如請求項2所述的金屬凸塊結構的製作方法，其中該催化劑層的材質包括奈米鈀、奈米金或奈米銀。
  5. 如請求項2所述的金屬凸塊結構的製作方法，其中該活化程序包括一雷射活化程序或一加熱程序。
  6. 如請求項1所述的金屬凸塊結構的製作方法，其中該圖案化金屬層的材質包括鈀、金或銀。
  7. 如請求項1所述的金屬凸塊結構的製作方法，其中該金屬凸塊的材質包括銅、金、錫或鎳。
  8. 如請求項1所述的金屬凸塊結構的製作方法，其中該金屬凸塊的剖面形狀包括類圓形或矩形。
  9. 如請求項1所述的金屬凸塊結構的製作方法，其中該至少一接墊的材質包括銦錫氧化物、鈦、銅、鉬、鋁或鉻。
  10. 如請求項1所述的金屬凸塊結構的製作方法，其中該金屬凸塊的厚度介於1微米至10微米之間。
  11. 一種金屬凸塊結構，配置於一驅動基材上，其中該驅動基材為一薄膜電晶體玻璃基板，且該驅動基材上配置有一接墊以及一絕緣層，該接墊配置於該驅動基材的一配置面上且具有一上表面，而該絕緣層覆蓋該配置面與該接墊且暴露出該接墊的部分該上表面，該金屬凸塊結構包括：一圖案化金屬層，配置於該絕緣層所暴露出的該接墊的該上表面上且延伸覆蓋部分該絕緣層；以及一金屬凸塊，配置於該圖案化金屬層上，其中該金屬凸塊的一第一延伸方向垂直於該驅動基材的一第二延伸方向。
  12. 如請求項11所述的金屬凸塊結構，其中該圖案化金屬層的材質包括鈀、金或銀。
  13. 如請求項11所述的金屬凸塊結構，其中該金屬凸塊的材質包括銅、金、錫或鎳。
  14. 如請求項11所述的金屬凸塊結構，其中該金屬凸塊的剖面形狀包括類圓形或矩形。
  15. 如請求項11所述的金屬凸塊結構，其中該金屬凸塊的厚度介於1微米至10微米之間。
  16. 一種驅動基板，包括：一驅動基材，具有一配置面，其中該驅動基材為一薄膜電晶體玻璃基板；至少一主動元件，配置於該驅動基材的該配置面上；至少一接墊，配置於該驅動基材的該配置面上，且具有一上表面；一絕緣層，覆蓋該驅動基材的該配置面、該至少一主動元件以及該至少一接墊，且該絕緣層暴露出該接墊的部分該上表面；以及至少一金屬凸塊結構，包括：一圖案化金屬層，配置於該絕緣層所暴露出的該接墊的該上表面上且延伸覆蓋部分該絕緣層；以及一金屬凸塊，配置於該圖案化金屬層上，其中該金屬凸塊的一第一延伸方向垂直於該驅動基材的一第二延伸方向。
  17. 如請求項16所述的驅動基板，其中該圖案化金屬層的材質包括鈀，而該金屬凸塊的材質包括銅、金、錫或鎳。
  18. 如請求項16所述的驅動基板，其中該金屬凸塊的剖面形狀包括類圓形或矩形。
  19. 如請求項16所述的驅動基板，其中該金屬凸塊的厚度介於1微米至10微米之間。
  20. 如請求項16所述的驅動基板，其中該至少一接墊的材質包括銦錫氧化物、鈦、銅、鉬、鋁或鉻。
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