JP2011049530A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2011049530A JP2011049530A JP2010143085A JP2010143085A JP2011049530A JP 2011049530 A JP2011049530 A JP 2011049530A JP 2010143085 A JP2010143085 A JP 2010143085A JP 2010143085 A JP2010143085 A JP 2010143085A JP 2011049530 A JP2011049530 A JP 2011049530A
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Abstract
【解決手段】第1導電層11からなる電極端子が設けられた基板W1に感光性樹脂膜を形成して露光、現像して電極端子に達する第1及び第2の開口を形成し、ベークして感光性樹脂膜を絶縁層14に変成し、第1の開口を含む絶縁層14上に電極端子と接続する第2導電層17を形成し、第1導電層11との酸化還元電位の差が第1導電層11と前記第2導電層17との差よりも小である酸化還元電位を有する第3導電層18を第2導電層17上に形成し、基板W1に感光性樹脂膜を形成して露光、現像して第3導電層18に達する第3の開口13dと第2の開口を介して電極端子に達する第4の開口13eとを形成し、ベークして感光性樹脂膜を絶縁層19に変成し、第3導電層18に接続するバンプを形成する。
【選択図】図1−3
Description
図1−1〜図1−5は、本発明の実施の形態にかかる半導体装置の製造方法を模式的に説明する断面図である。まず、本実施の形態で使用する半導体ウェハ(基板)について説明する。図1−1(a)に示されるように、シリコンなどの半導体にLSI(Large Scale Integrated Circuit、図示せず)が形成された半導体基板W1(以下、単に「ウェハW1」と称する。)の表面上には、LSIの電極端子としての電極パッド11が形成されている。電極パッド11を構成する材料としては例えばアルミニウム(Al)等が挙げられる。本実施の形態では、電極パッド11がアルミニウム(Al)により構成されている場合について説明するが、ここでのアルミニウム(Al)としては、アルミニウム(Al)−銅(Cu)、アルミニウム(Al)−銅(Cu)−シリコン(Si)などの通常の半導体装置で用いられるアルミニウム(Al)を主成分とするアルミニウム(Al)合金であってもよいのは勿論である。このような電極パッド11が形成されたウェハW1を使用して、以下の工程を行う。
第2の実施の形態では、第1の実施の形態の変形例について図4を参照して説明する。図4は、第2の実施の形態にかかる半導体装置の製造方法を模式的に説明する断面図である。まず、第1の実施の形態において図1−1(a)〜図1−3(g)に対応する工程を実施して、図4(a)に示されるように再配置配線層17上にニッケル(Ni)からなる導電性保護層18を形成する。
Claims (12)
- 半導体素子が設けられた半導体基板上に互いに形態の異なる2つの接続端子を形成する半導体装置の製造方法であって、
前記半導体素子用の第1導電層からなる電極端子が設けられた前記半導体基板の主面側に第1感光性樹脂膜を形成して露光し、水溶液を用いて現像することにより、前記電極端子に達する第1および第2の開口を形成する第1工程と、
前記第1感光性樹脂膜をベークして前記第1感光性樹脂膜を第1絶縁層に変成する第2工程と、
前記第1の開口内を含む前記第1絶縁層上に、前記電極端子と電気的に接続する第2導電層を形成する第3工程と、
前記第1導電層との酸化還元電位の差が前記第1導電層と前記第2導電層との酸化還元電位の差よりも小である酸化還元電位を有する第3導電層を前記第2導電層上に形成する第4工程と、
前記半導体基板の主面側に第2感光性樹脂膜を形成して露光し、水溶液を用いて現像することにより、前記第3導電層に達する第3の開口と、前記第2の開口を介して前記電極端子に達する第4の開口とを形成する第5工程と、
前記第2感光性樹脂膜をベークして前記第2感光性樹脂膜を第2絶縁層に変成し、前記第2および第4の開口から前記電極端子が露出してなる第1接続端子を形成する第6工程と、
前記第3の開口から露出した前記第3導電層に電気的に接続するバンプを形成して第2接続端子を形成する第7工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第1導電層がアルミニウムからなり、前記第2導電層が銅からなり、前記第3導電層がマンガン、タンタル、亜鉛、クロム、コバルト、ニッケル、錫および鉛からなる群より選択されるすくなくとも1種の金属からなること、
を特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第2感光性樹脂膜を形成する前に、前記第3導電層の表面に対して有機溶液、アルカリ溶液または前記有機溶液と前記アルカリ溶液との混合液のうちのいずれか1つ以上により表面処理を行うことにより前記第3導電層の表面を酸化させること、
を特徴とする請求項1または2に記載の半導体装置の製造方法。 - 半導体素子が設けられた半導体基板上に互いに形態の異なる2つの接続端子を形成する半導体装置の製造方法であって、
前記半導体素子用のアルミニウム層からなる電極端子が設けられた前記半導体基板の主面側に第1感光性樹脂膜を形成して露光し、水溶液を用いて現像することにより、前記電極端子に達する第1および第2の開口を形成する第1工程と、
前記第1感光性樹脂膜をベークして前記第1感光性樹脂膜を第1絶縁層に変成する第2工程と、
前記第1および第2の開口内を含む前記半導体基板の主面側に、通電層を形成する第3工程と、
前記第1の開口を包含する領域に所定のパターン開口を有するマスク層を前記通電層上に形成する第4工程と、
前記パターン開口内に前記通電層を用いた電解めっきにより銅層からなる再配置配線層を形成し、さらに前記通電層を用いた電解めっきにより前記再配置配線層の最表層にニッケル層からなる導電性保護層を形成する第5工程と、
前記マスク層を除去し、さらに前記再配置配線層により覆われていない前記通電層を除去する第6工程と、
前記マスク層と前記通電層を除去した後、前記半導体基板の主面側に第2感光性樹脂膜を形成して露光し、水溶液を用いて現像することにより、前記導電性保護層に達する第3の開口と、前記第2の開口を介して前記電極端子に達する第4の開口とを形成する第7工程と、
前記第2感光性樹脂膜をベークして前記第2感光性樹脂膜を第2絶縁層に変成し、前記第2および第4の開口から前記電極端子が露出してなる第1接続端子を形成する第8工程と、
前記第3の開口から露出した前記導電性保護層に電気的に接続するバンプを形成して第2接続端子を形成する第9工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記第2感光性樹脂膜を形成する前に、前記ニッケル層の表面に対して有機溶液、アルカリ溶液または前記有機溶液と前記アルカリ溶液との混合液のうちのいずれか1つ以上により表面処理を行うことにより前記ニッケル層の表面を酸化させて前記導電性保護層の表面に酸化ニッケル(II)を形成すること、
を特徴とする請求項4に記載の半導体装置の製造方法。 - 前記有機溶液が、アルコール、アセトン、ヘキサン、トルエン、エチルアミン、アセトニトリル、テトラヒドロフラン、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、N−メチル−2−ピロリドン、ジメチルスルホキシド、N,N−ジメチルホルムアミドからなる群より選択されるすくなくとも1種の溶液であること、
を特徴とする請求項3または5に記載の半導体装置の製造方法。 - 前記アルカリ溶液が、アンモニウム系水溶液、ナトリウム系水溶液およびカリウム系水溶液からなる群より選択されるすくなくとも1種の溶液であること、
を特徴とする請求項3または5に記載の半導体装置の製造方法。 - 前記第1接続端子が、ボンディングワイヤを介した外部との接続用の端子であり、
前記第2接続端子が、他の電子部品との接続用の端子であること、
を特徴とする請求項1〜7のいずれか1つに記載の半導体装置の製造方法。 - 半導体素子が設けられるとともに、表面に前記半導体素子用の第1導電層からなる電極端子が設けられた半導体基板と、
前記半導体基板における前記電極端子が設けられた主面上に形成され、前記電極端子上の領域に前記電極端子に達する第1および第2の開口を有し、感光性樹脂が変成されてなる第1絶縁層と、
少なくとも前記第1の開口内を埋めて設けられ、前記電極端子と電気的に接続された第2導電層からなる再配置配線と、
前記再配置配線の最表層に形成され、前記第1導電層との酸化還元電位の差が前記第1導電層と前記第2導電層との酸化還元電位の差よりも小である酸化還元電位を有する第3導電層からなる導電性保護層と、
前記第1絶縁層上および前記導電性保護層上に形成され、前記導電性保護層に達する第3の開口と、前記第2の開口を介して前記電極端子に達する第4の開口とを有し、感光性樹脂が変成されてなる第2絶縁層と、
少なくとも前記第3の開口を埋めて前記導電性保護層上に形成されたバンプと、
を備えることを特徴とする半導体装置。 - 前記導電性保護層が、前記再配置配線上に形成された前記第3導電層からなる第1導電性保護層と、前記第3導電層の金属酸化物を前記第1導電性保護層よりも多く含有して前記第1導電性保護層上に形成された第2導電性保護層とを有すること、
を特徴とする請求項9に記載の半導体装置。 - 前記第1導電層がアルミニウムからなり、前記第2導電層が銅からなり、前記第3導電層がマンガン、タンタル、亜鉛、クロム、コバルト、ニッケル、錫および鉛からなる群より選択されるすくなくとも1種の金属からなること、
を特徴とする請求項9または10に記載の半導体装置の製造方法。 - 前記第3導電層がニッケルであり、前記金属酸化物が酸化ニッケル(II)であること、
を特徴とする請求項11に記載の半導体装置の製造方法。
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JP2015038932A (ja) * | 2013-08-19 | 2015-02-26 | 富士通セミコンダクター株式会社 | 電子デバイス及びその製造方法 |
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JP2016225466A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
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JP2017045900A (ja) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
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US8314491B2 (en) | 2012-11-20 |
US20110024901A1 (en) | 2011-02-03 |
CN101989557A (zh) | 2011-03-23 |
CN101989557B (zh) | 2012-10-10 |
JP5355504B2 (ja) | 2013-11-27 |
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