TW201836440A - 用以傳輸自由基與前驅物氣體至下游腔室以致能遠程電漿膜沉積之具有熱控制的整合式噴淋頭 - Google Patents

用以傳輸自由基與前驅物氣體至下游腔室以致能遠程電漿膜沉積之具有熱控制的整合式噴淋頭 Download PDF

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Publication number
TW201836440A
TW201836440A TW106143637A TW106143637A TW201836440A TW 201836440 A TW201836440 A TW 201836440A TW 106143637 A TW106143637 A TW 106143637A TW 106143637 A TW106143637 A TW 106143637A TW 201836440 A TW201836440 A TW 201836440A
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Taiwan
Prior art keywords
processing system
substrate processing
fluid
shower head
chamber
Prior art date
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TW106143637A
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English (en)
Inventor
瑞秋 巴特瑟
邱華檀
巴德里 凡拉德拉彥
派崔克 吉拉德 百林
龔伯
威爾 許簍瑟
桂喆
談太德
翰杰弗里
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美商蘭姆研究公司
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Publication of TW201836440A publication Critical patent/TW201836440A/zh

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    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45563—Gas nozzles
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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  • Computer Hardware Design (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
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Abstract

基板處理系統包括第一腔室，該第一腔室包括基板支撐件。噴淋頭係設置在第一腔室上方且配置成過濾離子以及傳輸來自電漿源的自由基至第一腔室。噴淋頭包括：(1)傳熱流體充氣部，其包括用以接收傳熱流體的一入口、以及用以引導傳熱流體通過噴淋頭的中心部分而至一出口以控制噴淋頭的溫度的複數流體通道，(2)第二氣體充氣部，其包括用以接收第二氣體的一入口、以及用以噴射第二氣體至第一腔室內的複數第二氣體噴射器，及(3)複數的通孔，其穿過噴淋頭。通孔不與傳熱流體充氣部或第二氣體充氣部呈流體連通。

Description

用以傳輸自由基與前驅物氣體至下游腔室以致能遠程電漿膜沉積之具有熱控制的整合式噴淋頭
本揭露內容關於基板處理系統，且尤其關於包括傳輸自由基與前驅物氣體至下游腔室之噴淋頭的基板處理系統。
本文提供的背景描述係針對概括性地呈現本揭露內容之脈絡的目的。目前所列名之發明人的工作成果(就本先前技術章節中所描述之範圍而言)、以及不可以其他方式適格為申請時之習知技術的描述內容之實施態樣均不明示或暗示地被認為是相對本揭露內容的習知技術。
基板處理系統可用以在例如半導體晶圓之基板上沉積膜。基板處理系統典型地包括處理腔室及基板支撐件。在膜沉積期間，可供給自由基與前驅物氣體至處理腔室。
例如，處理腔室可包括上腔室、下腔室及基板支撐件。噴淋頭可設置在上腔室及下腔室之間。基板係設置在下腔室中的基板支撐件上。電漿氣體混合物係供給至上腔室且電漿在上腔室中點燃。由電漿產生的自由基的一部分流經噴淋頭而至下腔室。噴淋頭過濾離子並屏蔽UV光到達下腔室。前驅物氣體混合物係通過噴淋頭供給至下腔室並與自由基反應以在基板上沉積膜。
一般而言，噴淋頭不具有熱控制系統。然而，在一些處理系統中，基本的熱控制系統用以控制噴淋頭的外邊緣的溫度，噴淋頭外邊緣係易受影響且不處於真空下。由於來自電漿的熱，基本的熱控制系統無法均勻地控制整個噴淋頭的溫度。換言之，在噴淋頭的中心處的溫度增加。溫度改變亦伴隨製程改變而發生，例如開啟/關閉電漿、壓力、流率及/或基座溫度。噴淋頭的溫度的變化不利地影響沉積製程的均勻性以及損害效能。
基板處理系統包括第一腔室，該第一腔室包括基板支撐件。噴淋頭係設置在第一腔室上方且配置成過濾離子以及傳輸來自電漿源的自由基至第一腔室。噴淋頭包括：(1)傳熱流體充氣部，其包括用以接收傳熱流體的一入口、以及複數的流體通道，該複數的流體通道用以引導傳熱流體通過噴淋頭的中心部分而至一出口以控制噴淋頭的溫度，(2)第二氣體充氣部，其包括用以接收第二氣體的一入口、以及複數的第二氣體噴射器，該第二氣體噴射器用以噴射第二氣體至第一腔室內，及(3)複數的通孔，其穿過噴淋頭。該等通孔不與傳熱流體充氣部或第二氣體充氣部保持流體連通。
在其他特徵中，傳熱流體充氣部包括與入口呈流體連通之第一充氣部。流體通道的第一末端係與第一充氣部呈流體連通。第二充氣部係與流體通道的相反末端呈流體連通。
在其他特徵中，傳熱流體充氣部包括與入口呈流體連通的第一充氣部、與流體通道的第一末端呈流體連通的第二充氣部、設置在第一充氣部及第二充氣部之間以限制其間的流體流量之第一複數的節流部、與流體通道的相反末端呈流體連通的第三充氣部、與出口呈流體連通的第四充氣部、以及設置在第三充氣部與第四充氣部之間以限制其間的流體流量之第二複數的節流部。
在其他特徵中，複數的流體通道以徑向方向從噴淋頭的一側流通至噴淋頭的相反側。複數的流體通道定義一直線路徑。複數的流體通道定義一曲線路徑。複數的流體通道定義一正弦形狀的路徑。
在其他特徵中，第二氣體充氣部包括第一充氣部、第二充氣部以及設置在第一充氣部與第二充氣部之間的流量節流部。
在其他特徵中，流量節流部包含第一複數的牆以及定義在第一複數的牆之間的複數的槽縫。第一複數的牆為弧形形狀。第二複數的牆圍繞在第二充氣部中的通孔而設置。第二複數的牆為圓柱形狀。
在其他特徵中，第二氣體噴射器係與第二充氣部呈流體連通。複數的節流部設置在第二充氣部與第二氣體噴射器之間。
在其他特徵中，複數的流體通道包括入口與出口。複數的流體通道的入口係設置在噴淋頭的一側上，複數的流體通道的出口係設置在該一側上介於該等入口之間，且複數的流體通道連接至入口，行進橫過噴淋頭並橫過噴淋頭返回至出口。
在其他特徵中，第二腔室係設置在第一腔室上方。噴淋頭係設置在第一腔室與第二腔室之間。線圈係圍繞第二腔室設置。RF產生器係連接至線圈以在第二腔室中產生電漿。
在其他特徵中，流體通道的至少一者包括流量節流部。傳熱流體包含液體。傳熱流體包含氣體。傳熱流體不流至第一腔室內。
在其他特徵中，第二氣體噴射器從噴淋頭的底表面延伸一預定距離，其中該預定距離在從0.1英吋至1.5英吋的範圍中。通孔具有在從0.05英吋至0.3英吋的範圍中之直徑。
在其他特徵中，噴淋頭包括圓柱形的牆，該牆自噴淋頭的底表面延伸，且該牆係設置於該複數的通孔與複數的第二氣體噴射器的徑向外側。噴淋頭包括圓柱形的牆，該牆自噴淋頭的頂表面向上延伸，且該牆係設置於該複數的通孔與複數的第二氣體噴射器的徑向外側。
在其他特徵中，第一O型環係設置在噴淋頭的頂表面與上腔室之間，且第二O型環係設置在噴淋頭的底表面與下腔室之間。
本揭露內容之應用的進一步領域將自實施方式、申請專利範圍、及圖式而變得顯而易見。實施方式及特定範例僅意在說明的目的，且不意圖限制本揭露內容的範疇。
本揭露內容關於基板處理系統，該系統包括整合的齊平安裝式噴淋頭，該噴淋頭傳輸均勻的自由基以及過濾來自遠程電漿源的離子。藉由供給傳熱流體至通過噴淋頭的中心部分之通道以維持均勻且受控制的溫度，噴淋頭提供均勻的溫度控制。噴淋頭亦對包括基板之腔室提供均勻的前驅物氣體流傳輸。在一些範例中，基板處理系統可用以沉積保形的碳化物膜，但是可沉積其他類型的膜。
現參照圖1，基板處理系統10包括上腔室20及下腔室30。儘管顯示及描述基板處理系統的特定類型，然可使用其他類型。儘管顯示感應耦合式電漿，然可使用其他類型的電漿產生，例如電容耦合式電漿、遠程電漿源或其他合適的電漿產生器。
在一些範例中，上腔室20可包括圓頂形狀的腔室，但是可使用其他腔室形狀。基板支撐件34設置在下腔室30中。在基板處理期間，基板36設置在基板支撐件34上。噴淋頭40設置在上腔室20及下腔室30之間。感應線圈42可圍繞上腔室20設置。
氣體傳輸系統50-1可用以供給包括電漿氣體之製程氣體混合物至上腔室20。氣體傳輸系統50-1包括一或更多氣體源52-1、52-2…及52-N、閥54-1…及54-N、質量流量控制器(MFC)56-1…及56-N、以及歧管58(其中N為整數)，但是可使用其他類型的氣體傳輸系統。氣體傳輸系統50-2傳輸包括前驅物氣體之製程氣體混合物至噴淋頭40。
RF電漿產生器66包括RF源70及匹配網路72。RF電漿產生器66選擇性地供給RF功率至感應線圈42(在供給電漿氣體時)以在上腔室20中產生電漿62。
熱控制系統86可用以供給例如氣體或液體的冷卻劑之傳熱流體至噴淋頭40以控制噴淋頭40的溫度。閥88及泵浦90可用以排空反應物。
控制器94與氣體傳輸系統50-1及50-2溝通，以依需要來選擇性地供給製程氣體至上腔室20及噴淋頭40。控制器94與RF電漿產生器66溝通，以在上腔室20中產生及熄滅電漿。
控制器94與熱控制系統86溝通，以控制用以控制噴淋頭40的溫度之傳熱流體的流率及溫度。在一些範例中，傳熱流體可包括水、與乙二醇混合的水、全氟多醚氟化流體或其他流體、及/或一或更多氣體。在一些範例中，熱控制系統86使用閉迴路控制方式來控制傳熱流體的流率或溫度。在其他範例中，熱控制系統86使用比例性積分微分(PID)控制方式來控制流率及溫度。傳熱流體可由建築物水循環系統提供在開迴路系統中。在一些範例中，傳熱流體受到氣密密封而與真空腔室隔開。
在一些範例中，控制器94可連接至設置在噴淋頭40中之一或更多溫度感測器(未顯示)以感測噴淋頭40的一或更多溫度。在一些範例中，控制器94可連接至設置在噴淋頭40中之一或更多壓力感測器(未顯示)以感測處理腔室中之一或更多壓力。控制器94與閥88及泵浦90溝通，以控制上腔室20及下腔室30內的壓力並從該處選擇性地排空反應物。
現參照2A-3，其顯示噴淋頭40的頂表面102、底表面104及側表面108。在圖2A中，噴淋頭40包括複數間隔開的通孔110，該通孔110在噴淋頭的軸向中心部分或中心從噴淋頭40的頂表面102穿至噴淋頭40的底表面104。在一些範例中，如在圖2B中所示，O型環111可設置在噴淋頭40的底表面104與下腔室30之間。凹槽113可設置在噴淋頭40及下腔室30其中一或兩者上以放置O型環111。
複數的第二氣體噴射器112自噴淋頭40供給例如前驅物氣體之第二氣體。在一些範例中，第二氣體噴射器112在噴淋頭40的中心部分從噴淋頭40的底表面104向下延伸。在一些範例中，第二氣體噴射器112包括在底表面104上的節流部(未顯示)以防止逆擴散並以使第二氣體噴射器之間的氣體流動均勻。該節流部可能誘發阻流條件。
在圖3中，噴淋頭40包括作為入口及出口的傳熱流體埠120、122。噴淋頭40可容納具有多對的埠之多於一個傳熱流體充氣部。洩漏收集墊座128可設置成圍繞傳熱流體埠120、122的一或兩者。洩漏收集墊座128可設置在上腔室及下腔室之外。洩漏收集墊座128容許洩漏偵測。在一些範例中，O型環115可設置在噴淋頭40的頂表面102與上腔室20之間。凹槽可設置在噴淋頭40及上腔室20的一或兩者上，以類似於在圖2B中所顯示的方式設置O型環111。
現參照圖4A，噴淋頭40的通孔110及第二氣體噴射器112可以各種圖案設置。例如，在圖4A中所示之噴淋頭40的通孔110及第二氣體噴射器112可具有偏移的三角形圖案T。替代的圖案包括矩形、放射狀、六角形或螺旋的型式，但是可使用其他圖案。在一些範例中，第二氣體噴射器112的間距在從0.25英吋至2英吋的範圍中。在一些範例中，通孔110可具有與第二氣體噴射器相同的間距，但是可如在圖4B及4C中所示般使用不同的間距。
在一些範例中，通孔110可包括複數較小的通孔，該較小的通孔圍繞各第二氣體噴射器112而聚集，如在圖4B及4C之範例中所示。圍繞第二氣體噴射器112之通孔110的配置可為均勻的(如在圖4B中所示)或非均勻的(如在圖4C中所示)。在一些範例中，通孔110-R係位於靠近噴淋頭40的中心之第二氣體噴射器的一側上之噴淋頭40的徑向線上。
現參照圖5A-8B，其顯示噴淋頭40的側視橫剖面圖。在圖5A中，通孔110從噴淋頭40的頂表面102穿至噴淋頭40的底表面104。一或更多傳熱流體充氣部140係設置在一或更多平面中，該等平面係與通孔110垂直且與噴淋頭40的頂表面102平行但偏移於該頂表面102。一或更多第二氣體充氣部150係設置在一或更多平面中，該等平面係與通孔110垂直且與噴淋頭40的底表面104及包括傳熱流體充氣部140的該一或更多平面平行但偏移。所示之配置為傳熱流體充氣部高於第二氣體充氣部。可顛倒該等充氣部，使得第二氣體充氣部高於傳熱流體充氣部。
一或更多傳熱流體充氣部140係連接至傳熱流體埠120、122。一或更多第二氣體充氣部150從第二氣體入口(圖2A)接收氣體，並將第二氣體流供給至第二氣體噴射器112的流體通道152。
在一些範例中，第二氣體噴射器112延伸一預定距離而遠離噴淋頭40的底表面，以減少在噴淋頭40上的膜沉積。在一些範例中，該預定距離在從0.1英吋至1.5英吋的範圍中，但是可使用其他距離。在一些範例中，第二氣體噴射器112包括節流部以防止逆擴散以及確保第二氣體噴射器彼此之間的流動均勻性。在一些範例中，通孔110具有在從0.05英吋至0.3英吋的範圍中之直徑。
在圖5B中，噴淋頭40可由包括頂層163、中間層165及底層167之複數層構成，且該頂層163、中間層165及底層167係連接在一起。可加入更多層以產生額外充氣部。在一些範例中，噴淋頭40可使用真空硬焊、鎢惰性氣體(TIG)熔接或電子束熔接來製造，以在合理成本下達成複雜的與獨特的幾何構造。真空硬焊接合容許將噴淋頭加工成為複數平板(其具有切入該等平板內之凹槽)，且在各板之間具有硬焊的層。熔接技術需要更複雜的次元件以使熔接到達需要密封的所有區域。可加工支柱及相應的孔以抬高密封區域至熔接可到達之部分的表面。
在一些範例中，中間層165的頂表面定義該一或更多傳熱流體充氣部140，且中間層165的底表面定義該一或更多第二氣體充氣部150。然而，頂層163的底表面可用以部分地或完全地定義該一或更多傳熱流體充氣部140，且底層167的頂表面可用以完全地或部分地定義該一或更多第二氣體充氣部。
在一些範例中，充氣部及在其之上與在其之下的材料之厚度為0.05英吋至0.25英吋，但是可使用其他厚度。在充氣部之間及在充氣部之上/之下的材料的厚度係由支撐流體壓力所需的強度及製造所需的材料厚度來決定。可調整傳熱流體充氣部140的厚度之大小以減少流體的壓降。可擇定足夠大之第二氣體充氣部150的大小，以容許均勻分佈氣體至各噴射器112。各層的厚度應受到最小化以減少總厚度，以減少在通孔110中之自由基的損失。
在一些範例中，頂層163及底層167的厚度在從0.075英吋至0.125英吋的範圍中，但是可使用其他厚度。在一些範例中，頂層163及底層167的厚度為0.1英吋，但是可使用其他厚度。在一些範例中，中間層165的厚度在從0.4英吋至0.6英吋的範圍中，但是可使用其他厚度。在一些範例中，中間層165的厚度為0.5英吋，但是可使用其他厚度。在一些範例中，噴淋頭的厚度為低於或等於1英吋。在一些範例中，噴淋頭的厚度係低於或等於0.7英吋。
在圖6及圖7中，顯示洩漏收集墊座128。洩漏收集墊座128包括凹陷部，該凹陷部圍繞傳熱流體埠120、122之至少一者而設置。在一些範例中，凹陷部為圓柱形，但是可使用其他形狀。
在圖8A中，一些範例包括圓柱形的牆210，該牆210從噴淋頭40的徑向外邊緣208(與該邊緣208接近或徑向向內隔開)朝基板36向下延伸(且在通孔110及第二氣體噴射器112徑向外側)。圓柱形的牆210可與噴淋頭40整合或附接至噴淋頭40。圓柱形的牆210改善在噴淋頭40及基板所見之腔室牆之間的熱均勻性。藉由在該牆及基板支撐件34之間建立流量限制，圓柱形的牆210亦可用以控制排氣埠泵抽的不均勻性。在一些範例中，圓柱形的牆210延伸至低於一平面，該平面包括基板支撐件34的頂表面。
在圖8B中，一些範例包括圓柱形的牆211，該牆211從噴淋頭40的徑向外邊緣208(與該邊緣208接近或徑向向內隔開)向上延伸(且於通孔110及第二氣體噴射器112的徑向外側)。圓柱形的牆211可與噴淋頭40整合或附接至噴淋頭40的頂表面。圓柱形的牆211提供用於安裝自由基源的安裝表面。
現參照圖9-10，一或更多傳熱流體充氣部140的範例配置。在圖9中，顯示中間層165的頂表面。一或更多傳熱流體充氣部140包括第一充氣部156-1。在一些範例中，第一充氣部156-1具有弧形形狀，但是可使用其他形狀。在一些範例中，複數的節流部158-1彼此鄰近地設置在第一充氣部156-1的一側上。擇定在各個複數的節流部158-1之間的間距，以限制及分佈從第一充氣部156-1進入第二充氣部156-2的流量。在一些範例中，複數的節流部158-1各者包括具有圓形、橢圓形或長橢圓形(oblong)的形狀之支柱，但是可使用其他形狀。複數的節流部158-1可用以使在流體通道160之間的流體流動更均勻，並以消除噴射效應(jetting effects)。或者，如圖10所示，一或更多的流體通道160可包括節流部164以控制流量。如果流體通道160包括節流部164，則可省略該複數的節流部158-1，而第一充氣部156-1及第二充氣部156-2可成為單一充氣部。
第二充氣部156-2開通入流體腔室160的第一末端。在一些範例中，流體通道160具有三角形、方形波、曲線或大致上正弦的形狀以增加表面積。流體通道160的第二末端係連接至設置在噴淋頭40的相反側之第三充氣部156-3。複數的節流部158-2設置在第三充氣部156-3的一側上。複數的節流部158-2各者係設置以限制進入第四充氣部156-4的流量。第四充氣部156-4係連接至出口。如果流體通道160包括節流部164，則可省略該複數的節流部158-2，而第三充氣部156-3及第四充氣部156-4可成為單一充氣部。
在一些範例中，傳熱流體流體通道160具有低於或等於10%流率的通道與通道之間的不均勻性。在一些範例中，傳熱流體流率為每分鐘10加侖，並將整個噴淋頭表面控制在攝氏+-1度。在一些範例中，第二氣體噴射器112具有低於或等於1%質量流率的流量不均勻性。在一些範例中，第二氣體噴射器112具有低於或等於0.1%質量流率的流量不均勻性。
在圖11中，顯示中間層165的底表面。一或更多第二氣體充氣部150包括與第一充氣部176-1及第二充氣部176-2保持流體連通之氣體入口172及流體通路174。第一複數的牆180係設置在第一充氣部176-1與第二充氣部176-2之間。複數的槽縫184係設置在複數的牆180的末端之間以限制在第一充氣部176-1與第二充氣部176-2之間的流量。在一些範例中，第一充氣部176-1為環形，第二充氣部176-2為圓形，且第一複數的牆180為弧形形狀，但是可使用其他形狀。
第二複數的牆190係圍繞通孔110設置。在一些範例中，第二複數的牆190具有圓柱形的形狀，但是可使用其他形狀。在一些範例中，第二複數的牆190的頂邊緣提供接合區域以在第二充氣部176-2及通孔110之間建立真空密封。在一些範例中，複數的節流部186係設置在第二氣體噴射器112的入口處，以控制從第二充氣部176-2至下腔室30之第二氣體的流量。
在一些範例中，相對於節流部186來建構槽縫184的大小，使得在槽縫184處的壓降ΔP槽縫 顯著地高於壓降ΔP第一充氣部 。在一些範例中，ΔP槽縫 大於ΔP第一充氣部 20倍。在一些範例中，ΔP槽縫 大於ΔP第一充氣部 5倍。
現參照圖12-14，顯示另一噴淋頭40的中間部分300以包括沿著其一側設置之傳熱流體入口及出口。換言之，流體通道從入口橫過越噴淋頭行進，並橫過噴淋頭返回出口。
在圖12中，顯示中間部分300的頂側。流體入口310係連接至流體入口充氣部320。在一些範例中，流體入口充氣部320為弧形形狀。至複數的流體通道330的入口324係連接至流體入口充氣部320。複數的流體通道330橫越噴淋頭40，轉向並返回位於該等入口324其中相鄰者之間的出口334。儘管流體通道330係顯示為直線片段，可使用例如以上所示的那些流體通道之非直線的流體通道以增加表面積及傳熱(或可使用直線及曲線的組合)。
出口334通過在中間部分300中之氣體穿孔338而至出口充氣部350，該出口充氣部350係位於圖13中之中間部分300的底側上。出口充氣部350係連接至流體出口358。可理解，類似在上文圖11中所顯示的那樣，中間部分300的底表面亦可包括第二氣體充氣部。可變化穿孔338的大小以補償通道與通道之間的不均勻流率，以達到如使用節流部158-1或節流部158-2般相同的均勻性。
此處描述之整合的噴淋頭傳輸充足且均勻的自由基、過濾來自遠程電漿源的離子、提供均勻的溫度控制以及供給均勻的前驅物。在一些範例中，由包括以上描述之傳熱流體通道之噴淋頭提供的熱控制將整個基板的熱度不均勻性控制在低於5℃。傳熱流體通道亦能控制由容納在上腔室20的容積中之電漿所產生的熱。噴淋頭更包括內部的第二氣體充氣部，該充氣部對下腔室提供均勻的前驅物傳輸。在一些範例中，來自第二氣體充氣部的氣體出口係從噴淋頭的底表面偏移一預定距離，以最小化在噴淋頭上的沉積以及延長清潔之間的時間。
先前描述在本質上僅為說明性的，而絕非意圖限制本揭露內容、其應用、或用途。本揭露內容之廣泛教示可以各種形式實施。因此，雖本揭露內容包括特定範例，然由於當研究圖式、說明書、與以下申請專利範圍時，其他變化將變得顯而易見，故本揭露內容之真實範疇不應如此受限。應理解，在不改變本揭露內容之原理的情形下，方法中之一或更多步驟可以不同次序(或同時)執行。再者，雖實施例之每一者係於以上描述為具有某些特徵，然關於本揭露內容之任何實施例所述該等特徵之任何一或更多者可在任何其他實施例中實施、及/或與其特徵組合(即使並未明確描述該組合)。換言之，所述實施例並非相互排斥，且一或更多實施例彼此的置換維持在本揭露內容之範疇中。
元件 (例如，在模組、電路元件、半導體疊層等) 之間的空間與功能上的關係乃使用包括「連接」、「接合」、「耦合」、「鄰近」、「在…旁」、「在…之上」、「上方」、「下方」、與「設置」之各種術語描述。除非明確地描述為「直接」之情形下，否則當於上述揭露內容中描述第一與第二元件之間的關係時，該關係可為在第一與第二元件之間不存在其它中介元件之直接關係，但亦可為在第一與第二元件之間存在一或更多中介元件(空間上或功能上)的間接關係。如本文所用，詞組「A、B、與C之至少一者」應解釋成意指使用非排除性邏輯OR之邏輯(A OR B OR C)，且不應解釋成代表「A之至少一者、B之至少一者、與C之至少一者」。
在一些實施例中，控制器為系統的一部分，該系統可為以上描述範例的一部分。如此之系統可包含半導體處理設備，該半導體處理設備包含(複數)處理工具、(複數)腔室、(複數)處理用平台、及/或特定的處理元件(基板基座、氣體流動系統等)。該等系統可與電子設備整合，以在半導體基板或基板的處理之前、期間、以及之後，控制該等系統的運作。電子設備可稱為「控制器」，其可控制系統或複數系統的諸多元件或子部件。取決於處理需求及/或系統類型，控制器可程式設計成控制本文中所揭露之製程的任何者，包含處理氣體的傳送、溫度設定(例如，加熱及/或冷卻)、壓力設定、真空設定、功率設定、射頻(RF)產生器設定、RF匹配電路設定、頻率設定、流速設定、流體傳送設定、位置和操作設定、基板轉移(進出與特定系統相連接或相接合之工具及其他轉移工具、及/或裝載鎖)。
廣泛地講，控制器可界定為具有用以接收指令、發佈指令、控制操作、啟動清洗操作、啟動終點量測以及類似者之諸多積體電路、邏輯、記憶體、及/或軟體的電子設備。積體電路可包含：儲存程式指令之韌體形式的晶片、數位訊號處理器(DSP，digital signal processor)、界定為特殊用途積體電路(ASIC，application specific integrated circuit)的晶片、及/或一或更多微處理器、或執行程式指令(例如，軟體)的微控制器。程式指令可為以不同的單獨設定(或程式檔案)之形式而傳達至控制器或系統的指令，該單獨設定(或程式檔案)為實行特定的製程(在半導體基板上，或針對半導體基板)界定操作參數。在一些實施例中，操作參數可為由製程工程師為了在一或更多以下者的製造期間實現一或更多處理步驟而界定之配方的一部分：覆層、材料、金屬、氧化物、矽、二氧化矽、表面、電路、及/或基板的晶粒。
在一些實施例中，控制器可為電腦的一部分，或耦接至電腦，該電腦係與系統整合、耦接至系統、以其他網路的方式接至系統、或其組合的方式而接至系統。舉例而言，控制器可在能容許遠端存取基板處理之「雲端」或廠房主機電腦系統的全部、或部分中。電腦可使系統能夠遠端存取，以監控製造操作的目前進度、檢查過去製造操作的歷史、自複數的製造操作而檢查趨勢或效能度量，以改變目前處理的參數、設定目前處理之後的處理步驟、或開始新的製程。在一些範例中，遠端電腦(例如，伺服器)可通過網路提供製程配方至系統，該網路可包含局域網路或網際網路。遠端電腦可包含使得可以進入參數及/或設定、或對該參數及/或設定進行程式設計的使用者介面，然後該參數及/或設定自遠端電腦而傳達至系統。在一些範例中，控制器以資料的形式接收指令，該指令為即將於一或更多操作期間進行之處理步驟的每一者指定參數。應理解，參數可特定地針對待執行之製程的類型、及控制器與之接合或加以控制之工具的類型。因此，如上所述，控制器可為分散式，例如藉由包含以網路的方式接在一起、且朝向共同之目的(例如，本文所描述之製程及控制)而運作的一或更多分離的控制器。用於如此目的之分散式控制器的範例將是腔室上與位於遠端的一或更多積體電路(例如，在作業平臺位準處、或作為遠端電腦的一部分)進行通訊的一或更多積體電路，兩者相結合以控制腔室上的製程。
例示性系統可包含但不限於以下者：電漿蝕刻腔室或模組、沉積腔室或模組、旋轉淋洗腔室或模組、金屬電鍍腔室或模組、清洗腔室或模組、斜角緣部蝕刻腔室或模組、物理氣相沉積(PVD)腔室或模組、化學氣相沉積(CVD)腔室或模組、原子層沉積(ALD)腔室或模組、原子層蝕刻(ALE)腔室或模組、離子植入腔室或模組、軌道腔室或模組、及可在半導體基板的製造及/或加工中相關聯、或使用的任何其他半導體處理系統。
如以上所提及，取決於待藉由工具而執行之(複數)製程步驟，控制器可與半導體製造工廠中之一或更多的以下者進行通訊：其他工具電路或模組、其他工具元件、叢集工具、其他工具介面、鄰近的工具、相鄰的工具、遍及工廠而分布的工具、主電腦、另一控制器、或材料輸送中使用之工具，該材料輸送中使用之工具將基板容器帶至工具位置及/或裝載埠，或自工具位置及/或裝載埠帶來基板容器。
10‧‧‧系統
20‧‧‧上腔室
30‧‧‧下腔室
34‧‧‧基板支撐件
36‧‧‧基板
40‧‧‧噴淋頭
42‧‧‧感應線圈
50-1‧‧‧氣體傳輸系統
50-2‧‧‧氣體傳輸系統
52-1‧‧‧氣體源
52-2‧‧‧氣體源
52-N‧‧‧氣體源
54-1‧‧‧閥
54-N‧‧‧閥
56-1‧‧‧質量流量控制器
56-N‧‧‧質量流量控制器
58‧‧‧歧管
62‧‧‧電漿
66‧‧‧電漿產生器
70‧‧‧RF源
72‧‧‧匹配網路
86‧‧‧熱控制系統
88‧‧‧閥
90‧‧‧泵浦
94‧‧‧控制器
102‧‧‧頂表面
104‧‧‧底表面
108‧‧‧側表面
110‧‧‧通孔
111‧‧‧O型環
112‧‧‧第二氣體噴射器
113‧‧‧凹槽
115‧‧‧O型環
120‧‧‧傳熱流體埠
122‧‧‧傳熱流體埠
128‧‧‧洩漏收集墊座
140‧‧‧傳熱流體充氣部
150‧‧‧第二氣體充氣部
152‧‧‧流體通道
156-1‧‧‧第一充氣部
156-2‧‧‧第二充氣部
156-3‧‧‧第三充氣部
156-4‧‧‧第四充氣部
158-1‧‧‧節流部
158-2‧‧‧節流部
160‧‧‧流體通道
163‧‧‧頂層
164‧‧‧節流部
165‧‧‧中間層
167‧‧‧底層
172‧‧‧入口
174‧‧‧流體通路
176-1‧‧‧第一充氣部
176-2‧‧‧第二充氣部
180‧‧‧牆
184‧‧‧槽縫
186‧‧‧節流部
190‧‧‧牆
208‧‧‧邊緣
210‧‧‧牆
211‧‧‧牆
300‧‧‧中間部分
310‧‧‧流體入口
320‧‧‧入口充氣部
324‧‧‧入口
330‧‧‧流體通道
334‧‧‧出口
338‧‧‧穿孔
350‧‧‧出口充氣部
358‧‧‧流體出口
本揭露內容將自實施方式與隨附圖式而變得更完全地獲得理解，其中：
圖1為根據本揭露內容的包括噴淋頭之基板處理腔室的範例的功能性方塊圖；
圖2A為根據本揭露內容的噴淋頭的範例的底部立體圖；
圖2B為根據本揭露內容的說明用於收容O型環的凹槽之側視橫剖面圖；
圖3為根據本揭露內容的噴淋頭的範例的頂部立體圖；
圖4A為根據本揭露內容的說明噴淋頭的範例的底表面的俯視圖；
圖4B為根據本揭露內容說明圍繞第二氣體噴射器而設置之複數的通孔的範例的俯視圖；
圖4C為根據本揭露內容說明圍繞第二氣體噴射器而設置之複數的通孔的另一範例的俯視圖；
圖5A為根據本揭露內容噴淋頭的範例的側視橫剖面圖；
圖5B為顯示由複數相鄰層所形成之噴淋頭的範例的側視橫剖面圖；
圖6為根據本揭露內容噴淋頭的另一範例的放大側視橫剖面圖；
圖7為根據本揭露內容圖6的噴淋頭的側視橫剖面圖；
圖8A為根據本揭露內容包括向下突出的牆之噴淋頭的另一範例的放大側視橫剖面圖；
圖8B為根據本揭露內容包括向上突出的牆之噴淋頭的另一範例的放大側視橫剖面圖；
圖9為根據本揭露內容噴淋頭的中間層的頂表面的範例的俯視圖；
圖10說明根據本揭露內容一通道的範例，該通道具有節流部以控制通過該通道的流體的流量；
圖11為根據本揭露內容噴淋頭的中間層的底表面的範例的俯視圖；
圖12為根據本揭露內容噴淋頭的中間層的頂表面的另一範例的俯視圖，該噴淋頭包括沿著其一邊緣設置之交替的傳熱流體入口與出口對；
圖13為根據本揭露內容圖12中之噴淋頭的中間層的底表面的俯視圖；及
圖14為根據本揭露內容圖12與13中之噴淋頭的側視橫剖面圖。
在圖式中，可重複使用參照數字，以識別相似及/或相同的元件。

Claims (25)

  1. 一種基板處理系統，包含： 一第一腔室，其包括一基板支撐件； 一噴淋頭，其設置在該第一腔室上方且配置成過濾離子以及傳輸來自一電漿源的自由基至該第一腔室， 其中該噴淋頭包括： 一傳熱流體充氣部，其包括：一入口，用以接收傳熱流體；以及複數的流體通道，用以引導該傳熱流體通過該噴淋頭的一中心部分而至一出口以控制該噴淋頭的溫度； 一第二氣體充氣部，其包括：一入口，用以接收第二氣體；以及複數的第二氣體噴射器，用以噴射該第二氣體至該第一腔室內；及 複數的通孔，其穿過該噴淋頭， 其中該通孔不與該傳熱流體充氣部或該第二氣體充氣部呈流體連通。
  2. 如申請專利範圍第1項之基板處理系統，其中該傳熱流體充氣部包括： 一第一充氣部，其與該入口呈流體連通， 其中該流體通道的第一末端係與該第一充氣部呈流體連通；及 一第二充氣部，其與該流體通道的相反末端呈流體連通。
  3. 如申請專利範圍第1項之基板處理系統，其中該傳熱流體充氣部包括： 一第一充氣部，其與該入口呈流體連通； 一第二充氣部，其與該流體通道的第一末端呈流體連通； 第一複數的節流部，其設置在該第一充氣部及該第二充氣部之間，以限制其間的流體流量； 一第三充氣部，其與該流體通道的相反末端呈流體連通； 一第四充氣部，其與該出口呈流體連通；及 第二複數的節流部，其設置在該第三充氣部與該第四充氣部之間，以限制其間的流體流量。
  4. 如申請專利範圍第1項之基板處理系統，其中該複數的流體通道以徑向方向從該噴淋頭的一側流通至該噴淋頭的一相反側。
  5. 如申請專利範圍第4項之基板處理系統，其中該複數的流體通道定義一直線路徑。
  6. 如申請專利範圍第4項之基板處理系統，其中該複數的流體通道定義一曲線路徑。
  7. 如申請專利範圍第6項之基板處理系統，其中該複數的流體通道定義一正弦形狀的路徑。
  8. 如申請專利範圍第1項之基板處理系統，其中該第二氣體充氣部包括： 一第一充氣部； 一第二充氣部；及 一流量節流部，其設置在該第一充氣部與該第二充氣部之間。
  9. 如申請專利範圍第8項之基板處理系統，其中該流量節流部包含： 第一複數的牆；及 複數的槽縫，其定義在該第一複數的牆之間。
  10. 如申請專利範圍第9項之基板處理系統，其中該第一複數的牆為弧形形狀。
  11. 如申請專利範圍第9項之基板處理系統，更包含第二複數的牆，其圍繞在該第二充氣部中的該通孔而設置。
  12. 如申請專利範圍第11項之基板處理系統，其中該第二複數的牆為圓柱形狀。
  13. 如申請專利範圍第8項之基板處理系統，其中該第二氣體噴射器係與該第二充氣部保持流體連通。
  14. 如申請專利範圍第13項之基板處理系統，更包含複數的節流部，其設置在該第二充氣部與該第二氣體噴射器之間。
  15. 如申請專利範圍第1項之基板處理系統，其中該複數的流體通道包括入口與出口，其中該複數的流體通道的該入口係設置在該噴淋頭的一側上，該複數的流體通道的該出口係設置在該一側上介於該入口之間，且該複數的流體通道連接至該入口、行進橫過該噴淋頭並橫過該噴淋頭返回至該出口。
  16. 如申請專利範圍第1項之基板處理系統，更包含： 一第二腔室，其設置在該第一腔室上方，其中該噴淋頭係設置在該第一腔室與該第二腔室之間； 一線圈，其圍繞該第二腔室設置；及 一RF產生器，其連接至該線圈以在該第二腔室中產生電漿。
  17. 如申請專利範圍第1項之基板處理系統，其中該流體通道的至少一者包括一流量節流部。
  18. 如申請專利範圍第1項之基板處理系統，其中該傳熱流體包含液體。
  19. 如申請專利範圍第1項之基板處理系統，其中該傳熱流體包含氣體。
  20. 如申請專利範圍第1項之基板處理系統，其中該傳熱流體不流至該第一腔室內。
  21. 如申請專利範圍第1項之基板處理系統，其中該第二氣體噴射器從該噴淋頭的一底表面延伸一預定距離，其中該預定距離在從0.1英吋至1.5英吋的範圍中。
  22. 如申請專利範圍第1項之基板處理系統，其中該通孔具有在從0.05英吋至0.3英吋的範圍中之一直徑。
  23. 如申請專利範圍第1項之基板處理系統，其中該噴淋頭包括一圓柱形的牆，該牆自該噴淋頭的一底表面延伸，且該牆係設置於該複數的通孔與該複數的第二氣體噴射器的徑向外側。
  24. 如申請專利範圍第1項之基板處理系統，其中該噴淋頭包括一圓柱形的牆，該牆自該噴淋頭的一頂表面向上延伸，且該牆係設置於該複數的通孔與該複數的第二氣體噴射器的徑向外側。
  25. 如申請專利範圍第1項之基板處理系統，更包含一第一O型環與一第二O型環，該第一O型環係設置在該噴淋頭的一頂表面與一第二腔室之間，該第二O型環係設置在該噴淋頭的一底表面與該第一腔室之間。
TW106143637A 2016-12-14 2017-12-13 用以傳輸自由基與前驅物氣體至下游腔室以致能遠程電漿膜沉積之具有熱控制的整合式噴淋頭 TW201836440A (zh)

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