JP5445252B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5445252B2 JP5445252B2 JP2010059964A JP2010059964A JP5445252B2 JP 5445252 B2 JP5445252 B2 JP 5445252B2 JP 2010059964 A JP2010059964 A JP 2010059964A JP 2010059964 A JP2010059964 A JP 2010059964A JP 5445252 B2 JP5445252 B2 JP 5445252B2
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- 230000008021 deposition Effects 0.000 title description 3
- 239000007789 gas Substances 0.000 claims description 279
- 239000010408 film Substances 0.000 claims description 113
- 238000012545 processing Methods 0.000 claims description 73
- 238000000354 decomposition reaction Methods 0.000 claims description 68
- 239000002994 raw material Substances 0.000 claims description 62
- 230000001737 promoting effect Effects 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 238000005192 partition Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- RDMHXWZYVFGYSF-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O RDMHXWZYVFGYSF-LNTINUHCSA-N 0.000 claims description 2
- VNNDVNZCGCCIPA-FDGPNNRMSA-N (z)-4-hydroxypent-3-en-2-one;manganese Chemical compound [Mn].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O VNNDVNZCGCCIPA-FDGPNNRMSA-N 0.000 claims description 2
- BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000005755 formation reaction Methods 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 239000012159 carrier gas Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 229910000838 Al alloy Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000003507 refrigerant Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001728 carbonyl compounds Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000000638 stimulation Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45565—Shower nozzles
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- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
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Description
Ru 3(CO) 12→3Ru+12CO
本発明は、以上のような問題点に着目し、これを有効に解決すべく創案されたものである。本発明は、膜厚の面内均一性を向上させると共に、反応効率を向上させて成膜速度も高くすることができる成膜装置である。
有機金属化合物の原料よりなる原料ガスを用いて被処理体の表面に薄膜を形成する成膜装置において、真空排気が可能になされた処理容器と、加熱ヒータが設けられると共に被処理体を載置する載置台と、載置台に対向させて設けられており、原料ガスの分解を促進させる分解促進ガスを導入させるために載置台上の被処理体に対向するように配置された複数の分解促進ガス導入口と原料ガスを導入させるために複数の分解促進ガス導入口が形成された領域を囲むようにして配置された原料ガス導入口とを有するガス導入手段とを備え、分解促進ガス導入口から分解促進ガスを流すと共に原料ガス導入口から原料ガスを流すようにしたので、膜厚の面内均一性を向上させると共に、反応効率を向上させて成膜速度も高くすることができる。
Ru3 (CO)12↑ ⇔ Ru3 (CO)12−x↑+XCO↑
Ru3 (CO)12−x↑+Q → 3Ru+(12−X)CO↑
Ru3 (CO)12↑+Q → 3Ru+12CO↑
ここで上記Arガスの作用と各ガスの供給態様について説明する。まず、前述した化合式に基づいて、原料ガスの分解を促進するガスとしてArガスを用いて検証実験を行った。実験では、シャワーヘッド構造のガス導入手段を用いて、成膜時には上記原料ガス(Ru3 (CO)12)をキャリアガスであるCOガスと共に供給しつつArガスを同時に供給している。その時の成膜速度を図6に示す。
次に、本発明の変形実施例1について説明する。先の実施例では、内部区画壁90の下端部側に設けたガス出口92の流路面積をある程度大きく設定したが、これに限定されず、この部分にオリフィス部を設けて流路面積を絞り込むことにより、処理空間Sにおける原料ガスの滞留時間を長くするようにしてもよい。図8はこのような本発明の変形実施例1を示す部分断面図である。尚、図2に示す構成部分と同一構成部分については、同一参照符号を付して、その説明を省略する。
22 処理容器
28 載置台
34 加熱ヒータ
50 載置台本体
52 基台
80 ガス導入手段
80A 分解促進ガス導入口
80B 原料ガス導入口
82 シャワーヘッド
90 内部区画壁
92 ガス出口
96 オリフィス形成部材
98 オリフィス部
S 処理空間
W 半導体ウエハ(被処理体)
Claims (7)
- 有機金属化合物の原料よりなる原料ガスを用いて被処理体の表面に薄膜を形成する成膜装置において、
真空排気が可能になされた処理容器と、
加熱ヒータが設けられると共に前記被処理体を載置する載置台と、
前記載置台に対向させて設けられており、前記原料ガスの分解を促進させる分解促進ガスを導入させるために前記載置台上の前記被処理体に対向するように配置された複数の分解促進ガス導入口と原料ガスを導入させるために前記複数の分解促進ガス導入口が形成された領域を囲むようにして配置された原料ガス導入口とを有するガス導入手段と、
を備えたことを特徴とする成膜装置。 - 前記分解促進ガス導入口は、前記載置台上の前記被処理体の垂直方向上方に対応させて配置されており、前記原料ガス導入口は、前記載置台上の前記被処理体の外周端よりも外側の領域の垂直方向上方に対応させて配置されていることを特徴とする請求項1記載の成膜装置。
- 前記処理容器内には、前記載置台の上方の処理空間を囲むように区画しつつその下端部が前記載置台に接近させて設けられて前記下端部と前記載置台の周縁部との間でガス出口を形成する内部区画壁を有していることを特徴とする請求項1又は2記載の成膜装置。
- 前記内部区画壁の下端部に前記載置台の半径方向の内方に向けて延在させて設けられて、前記載置台の周縁部との間で前記ガス出口に連通するオリフィス部を形成するオリフィス形成部材を有することを特徴とする請求項3記載の成膜装置。
- 前記内部区画壁と前記オリフィス形成部材は、前記原料ガスの分解温度未満で且つ固化温度又は液化温度以上の温度範囲に維持されていることを特徴とする請求項4に記載の成膜装置。
- 前記載置台は、昇降可能になされていることを特徴とする請求項1乃至5のいずれか一項に記載の成膜装置。
- 前記有機金属化合物は、Ru3 (CO)12、W(CO)6 、Ni(CO)4 、Mo(CO)6 、Co2 (CO)8 、Rh4 (CO)12、Re2 (CO)10、Cr(CO)6 、Os3 (CO)12、Ta(CO)5 、TEMAT(テトラキスエチルメチルアミノチタニウム)、TAIMATA、Cu(EDMDD)2 、TaCl5 、TMA(トリメチルアルミニウム)、TBTDET(ターシャリーブチルイミド−トリ−ジエチルアミドタンタル)、PET(ペンタエトキシタンタル)、TMS(テトラメチルシラン)、TEH(テトラキスエトキシハフニウム)、Cp2 Mn[=Mn(C5 H5 )2 ]、(MeCp)2 Mn[=Mn(CH3 C5 H4 )2 ]、(EtCp)2 Mn[=Mn(C2 H5 C5 H4 )2 ]、(i−PrCp)2 Mn[=Mn(C3 H7 C5 H4 )2 ]、MeCpMn(CO)3 [=(CH3 C5 H4 )Mn(CO)3 ]、(t−BuCp)2 Mn[=Mn(C4 H9 C5 H4 )2 ]、CH3 Mn(CO)5 、Mn(DPM)3 [=Mn(C11H19O2 )3 ]、Mn(DMPD)(EtCp)[=Mn(C7 H11C2 H5 C5 H4 )]、Mn(acac)2 [=Mn(C5 H7 O2 )2 ]、Mn(DPM)2 [=Mn(C11H19O2 )2 ]、Mn(acac)3 [=Mn(C5 H7 O2 )3 ]よりなる群から選択される1の材料よりなることを特徴とする請求項1乃至6のいずれか一項に記載の成膜装置。
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JP2010059964A JP5445252B2 (ja) | 2010-03-16 | 2010-03-16 | 成膜装置 |
KR1020110021519A KR101263565B1 (ko) | 2010-03-16 | 2011-03-10 | 성막 장치 |
US13/045,755 US20110226181A1 (en) | 2010-03-16 | 2011-03-11 | Film forming apparatus |
TW100108621A TW201202470A (en) | 2010-03-16 | 2011-03-15 | Film forming apparatus |
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JP (1) | JP5445252B2 (ja) |
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US9404180B2 (en) * | 2010-03-16 | 2016-08-02 | Tokyo Electron Limited | Deposition device |
JP5902896B2 (ja) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | 基板処理装置 |
JP6078354B2 (ja) * | 2013-01-24 | 2017-02-08 | 東京エレクトロン株式会社 | プラズマ処理装置 |
GB201309583D0 (en) * | 2013-05-29 | 2013-07-10 | Spts Technologies Ltd | Apparatus for processing a semiconductor workpiece |
CN103436856A (zh) * | 2013-08-01 | 2013-12-11 | 光垒光电科技(上海)有限公司 | 反应腔室 |
JP5917477B2 (ja) * | 2013-11-29 | 2016-05-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
JP6379550B2 (ja) * | 2014-03-18 | 2018-08-29 | 東京エレクトロン株式会社 | 成膜装置 |
JP2016036018A (ja) * | 2014-07-31 | 2016-03-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びガス供給部材 |
JP6456712B2 (ja) | 2015-02-16 | 2019-01-23 | 東京エレクトロン株式会社 | 基板保持機構及びこれを用いた基板処理装置 |
JP6419644B2 (ja) * | 2015-05-21 | 2018-11-07 | 東京エレクトロン株式会社 | 金属ナノドットの形成方法、金属ナノドット形成装置及び半導体装置の製造方法 |
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JP6750534B2 (ja) * | 2017-02-24 | 2020-09-02 | 東京エレクトロン株式会社 | 成膜装置 |
KR102516885B1 (ko) * | 2018-05-10 | 2023-03-30 | 삼성전자주식회사 | 증착 장비 및 이를 이용한 반도체 장치 제조 방법 |
JP7224175B2 (ja) * | 2018-12-26 | 2023-02-17 | 東京エレクトロン株式会社 | 成膜装置及び方法 |
CN110408910B (zh) * | 2019-08-16 | 2020-08-28 | 中国科学院上海微***与信息技术研究所 | 高通量气相沉积设备及气相沉积方法 |
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JP2022094569A (ja) * | 2020-12-15 | 2022-06-27 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
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-
2010
- 2010-03-16 JP JP2010059964A patent/JP5445252B2/ja active Active
-
2011
- 2011-03-10 KR KR1020110021519A patent/KR101263565B1/ko active IP Right Grant
- 2011-03-11 US US13/045,755 patent/US20110226181A1/en not_active Abandoned
- 2011-03-15 TW TW100108621A patent/TW201202470A/zh unknown
Also Published As
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KR20110104434A (ko) | 2011-09-22 |
TW201202470A (en) | 2012-01-16 |
JP2011190519A (ja) | 2011-09-29 |
KR101263565B1 (ko) | 2013-05-13 |
US20110226181A1 (en) | 2011-09-22 |
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