JP2020502793A - ラジカルおよび前駆体ガスを下流チャンバに供給して遠隔プラズマ膜蒸着を可能にするための温度制御を備えた統合シャワーヘッド - Google Patents
ラジカルおよび前駆体ガスを下流チャンバに供給して遠隔プラズマ膜蒸着を可能にするための温度制御を備えた統合シャワーヘッド Download PDFInfo
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- JP2020502793A JP2020502793A JP2019531737A JP2019531737A JP2020502793A JP 2020502793 A JP2020502793 A JP 2020502793A JP 2019531737 A JP2019531737 A JP 2019531737A JP 2019531737 A JP2019531737 A JP 2019531737A JP 2020502793 A JP2020502793 A JP 2020502793A
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Abstract
Description
本願は、開示全体が、参照によって本明細書に組み込まれる、2016年12月14日出願の米国特許出願第15/378,854号に基づく優先権を主張する。
Claims (25)
- 基板処理システムであって、
基板支持体を備える第1チャンバと、
前記第1チャンバの上方に配置され、イオンをフィルタリングし、プラズマ源から前記第1チャンバにラジカルを供給するように構成されているシャワーヘッドと、
を備え、
前記シャワーヘッドは、
熱伝導流体を受け入れるための流入口と、前記シャワーヘッドの中央部分通じて流出口まで前記熱伝導流体を導いて前記シャワーヘッドの温度を制御するための複数の流路とを備える熱伝導流体プレナムと、
二次ガスを受け入れるための流入口と、前記二次ガスを前記第1チャンバに注入するための複数の二次ガスインジェクタとを備える二次ガスプレナムと、
前記シャワーヘッドを貫通する複数の貫通孔と、
を備え、
前記貫通孔は、前記熱伝導流体プレナムとも前記二次ガスプレナムとも流体連通していない、基板処理システム。 - 請求項1に記載の基板処理システムであって、
前記熱伝導流体プレナムは、前記流入口と流体連通する第1プレナムと、
前記流路の第1端は、前記第1プレナムと流体連通し、
前記流路の反対端と流体連通する第2プレナムとを、備える、基板処理システム。 - 請求項1に記載の基板処理システムであって、前記熱伝導流体プレナムは、
前記流入口と流体連通する第1プレナムと、
前記流路の第1端と流体連通する第2プレナムと、
前記第1プレナムと前記第2プレナムとの間に配置され、それらの間の流体の流れを制限する第1複数の制限部と、
前記流路の反対端と流体連通する第3プレナムと、
前記流出口と流体連通する第4プレナムと、
前記第3プレナムと前記第4プレナムとの間に配置され、それらの間の流体の流れを制限する第2複数の制限部と、
を備える、基板処理システム。 - 請求項1に記載の基板処理システムであって、前記複数の流路は、前記シャワーヘッドの片側から前記シャワーヘッドの反対側へ半径方向に流れる、基板処理システム。
- 請求項4に記載の基板処理システムであって、前記複数の流路は、直線経路を規定する、基板処理システム。
- 請求項4に記載の基板処理システムであって、前記複数の流路は、曲線経路を規定する、基板処理システム。
- 請求項6に記載の基板処理システムであって、前記複数の流路は、正弦曲線形状の経路を規定する、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記二次ガスプレナムは、
第1プレナムと、
第2プレナムと、
前記第1プレナムと前記第2プレナムとの間に配置されている流量制限部と、
を備える、基板処理システム。 - 請求項8に記載の基板処理システムであって、前記流量制限部は、
第1複数の壁と、
前記第1複数の壁の間に規定されている複数のスロットと、
を備える、基板処理システム。 - 請求項9に記載の基板処理システムであって、前記第1複数の壁は、弓形である、基板処理システム。
- 請求項9に記載の基板処理システムであって、さらに、前記第2プレナムの前記貫通孔の周りに配置されている第2複数の壁を備える、基板処理システム。
- 請求項11に記載の基板処理システムであって、前記第2複数の壁は、円筒形である、基板処理システム。
- 請求項8に記載の基板処理システムであって、前記二次ガスインジェクタは、前記第2プレナムと流体連通する、基板処理システム。
- 請求項13に記載の基板処理システムであって、さらに、前記第2プレナムと前記二次ガスインジェクタとの間に配置されている複数の制限部を備える、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記複数の流路は、流入口および流出口を備え、前記複数の流路の前記流入口は、前記シャワーヘッドの片側に配置され、前記複数の流路の前記流出口は、前記片側で前記流入口の間に配置され、前記複数の流路は、前記流入口に接続し、前記シャワーヘッドを横切り、折り返して前記シャワーヘッドを横切って前記流出口に戻る、基板処理システム。
- 請求項1に記載の基板処理システムであって、さらに、
前記第1チャンバの上方に配置されている第2チャンバと、前記シャワーヘッドは前記第1チャンバと前記第2チャンバとの間に配置され、
前記第2チャンバの周りに配置されているコイルと、
前記第2チャンバ内でプラズマを生成するために、前記コイルに接続されているRF発生器と、
を備える、基板処理システム。 - 請求項1に記載の基板処理システムであって、前記流路の内の少なくとも1つは、流量制限部を備える、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記熱伝導流体は、液体を含む、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記熱伝導流体は、気体を含む、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記熱伝導流体は、前記第1チャンバには流れ込まない、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記二次ガスインジェクタは、前記シャワーヘッドの底面から所定の距離だけ伸びており、前記所定の距離は、0.1インチ(2.54mm)〜1.5インチ(38.1mm)の範囲内である、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記貫通孔は、0.05インチ(1.27mm)〜0.3インチ(7.62mm)の範囲の直径を有する、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記シャワーヘッドは、円筒壁を備え、前記円筒壁は、前記シャワーヘッドの底面から伸びて、前記複数の貫通孔および前記複数の二次ガスインジェクタの半径方向外側に配置されている、基板処理システム。
- 請求項1に記載の基板処理システムであって、前記シャワーヘッドは、円筒壁を備え、前記円筒壁は、前記シャワーヘッドの上面から上向きに伸びて、前記複数の貫通孔および前記複数の二次ガスインジェクタの半径方向外側に配置されている、基板処理システム。
- 請求項1に記載の基板処理システムであって、さらに、前記シャワーヘッドの上面と前記上側チャンバとの間に配置されている第1O−リングと、前記シャワーヘッドの前記底面と前記下側チャンバとの間に配置されている第2O−リングと、を備える、基板処理システム。
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CN110088885A (zh) | 2019-08-02 |
CN117497451A (zh) | 2024-02-02 |
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TW201836440A (zh) | 2018-10-01 |
KR20190087608A (ko) | 2019-07-24 |
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JP7163289B2 (ja) | 2022-10-31 |
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