TW201234480A - Method of modifying insulating film - Google Patents

Method of modifying insulating film Download PDF

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Publication number
TW201234480A
TW201234480A TW100135001A TW100135001A TW201234480A TW 201234480 A TW201234480 A TW 201234480A TW 100135001 A TW100135001 A TW 100135001A TW 100135001 A TW100135001 A TW 100135001A TW 201234480 A TW201234480 A TW 201234480A
Authority
TW
Taiwan
Prior art keywords
plasma
treatment
modifying
insulating film
processing
Prior art date
Application number
TW100135001A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshinori Osaki
Tetsuro Takahashi
Koji Maekawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201234480A publication Critical patent/TW201234480A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW100135001A 2010-09-30 2011-09-28 Method of modifying insulating film TW201234480A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010221269A JP2012079785A (ja) 2010-09-30 2010-09-30 絶縁膜の改質方法

Publications (1)

Publication Number Publication Date
TW201234480A true TW201234480A (en) 2012-08-16

Family

ID=46009127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100135001A TW201234480A (en) 2010-09-30 2011-09-28 Method of modifying insulating film

Country Status (4)

Country Link
JP (1) JP2012079785A (ko)
KR (1) KR101270875B1 (ko)
CN (1) CN102446728A (ko)
TW (1) TW201234480A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI814814B (zh) * 2018-04-27 2023-09-11 日商東京威力科創股份有限公司 基板處理系統及基板處理方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6040609B2 (ja) * 2012-07-20 2016-12-07 東京エレクトロン株式会社 成膜装置及び成膜方法
GB201615272D0 (en) * 2016-09-08 2016-10-26 Johnson Matthey Plc Method
EP3832697B1 (en) * 2018-08-02 2023-06-07 Fuji Corporation Atmospheric-pressure plasma generator

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235792A (ja) * 2002-02-27 2005-09-02 Tokyo Electron Ltd 基板処理方法
JP2004253777A (ja) * 2003-01-31 2004-09-09 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US7429540B2 (en) * 2003-03-07 2008-09-30 Applied Materials, Inc. Silicon oxynitride gate dielectric formation using multiple annealing steps
US7915179B2 (en) * 2004-11-04 2011-03-29 Tokyo Electron Limited Insulating film forming method and substrate processing method
US7501352B2 (en) * 2005-03-30 2009-03-10 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer
US7429538B2 (en) * 2005-06-27 2008-09-30 Applied Materials, Inc. Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric
WO2008081724A1 (ja) * 2006-12-28 2008-07-10 Tokyo Electron Limited 絶縁膜の形成方法および半導体装置の製造方法
CN101271840A (zh) * 2007-03-22 2008-09-24 中芯国际集成电路制造(上海)有限公司 栅氧化层的制作方法及半导体器件的制作方法
KR100998417B1 (ko) * 2007-08-20 2010-12-03 주식회사 하이닉스반도체 반도체 메모리 소자의 유전체막 형성 방법
JP5425404B2 (ja) * 2008-01-18 2014-02-26 東京エレクトロン株式会社 アモルファスカーボン膜の処理方法およびそれを用いた半導体装置の製造方法
KR20090080606A (ko) * 2008-01-22 2009-07-27 주식회사 하이닉스반도체 플래시 메모리 소자의 제조 방법
JP2010021378A (ja) * 2008-07-11 2010-01-28 Tokyo Electron Ltd シリコン酸窒化膜の形成方法および形成装置
KR20100012482A (ko) * 2008-07-29 2010-02-08 주식회사 하이닉스반도체 플래시 메모리 소자의 터널 절연막 형성 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI814814B (zh) * 2018-04-27 2023-09-11 日商東京威力科創股份有限公司 基板處理系統及基板處理方法

Also Published As

Publication number Publication date
CN102446728A (zh) 2012-05-09
KR20120034016A (ko) 2012-04-09
JP2012079785A (ja) 2012-04-19
KR101270875B1 (ko) 2013-06-05

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