CN103560157B - Strain structure and preparation method thereof - Google Patents
Strain structure and preparation method thereof Download PDFInfo
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- CN103560157B CN103560157B CN201310583275.8A CN201310583275A CN103560157B CN 103560157 B CN103560157 B CN 103560157B CN 201310583275 A CN201310583275 A CN 201310583275A CN 103560157 B CN103560157 B CN 103560157B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of strain structure and preparation method thereof, the method at least comprises the following steps: S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface; S2: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base; S3: base-plates surface forms the second stressor layers described in a pair; S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.The present invention applies high tensile stress can to any materials in certain limit, and method is simple effectively, compatible with semiconductor technology, has cost low, and the advantage that manufacturing speed is fast.
Description
Technical field
The invention belongs to field of semiconductor manufacture, relate to a kind of strain structure and preparation method thereof.
Background technology
Along with reducing of dimensions of semiconductor devices, traditional body silicon materials are just close to its physics limit, and in recent years, a lot of research group proposes to utilize the new material of high carrier mobility to replace traditional silicon materials to make transistor, to continue the development of Moore's Law.For the semiconductor such as strain Si, SiGe, stress can change the band structure of material, reduces the effective mass of charge carrier, reduces the scattering etc. of phonon, thus improves the mobility of charge carrier, improves the performance of MOS device; For strain Ge be also applicable.Ge is subject to extensive concern due to its high hole mobility.By applying tensile stress to Ge, in Ge, the mobility in electronics and hole can be promoted greatly, improves the performance of device.And strain Ge and can also be applied to photoelectric device.
Silicon based opto-electronics be integrated in recent years develop the extension being believed to effectively continue Moore's Law rapidly.At present, the major obstacle hindering silicon based opto-electronics integrated technology how to solve the light source problem with silica-based compatibility.When tensile stress arrival ~ 2%, the Ge of Ge film will be direct band gap by original indirect band gap transitions, be used for making laser, just can meet the integrated requirement of photoelectricity.
Preparation tensile strain Ge has many methods: 1. utilize the difference of the thermal coefficient of expansion of Ge and Si direct extension Ge on Si, can obtain ~ the tensile strain of 0.3%; 2. utilize III-V race's material as resilient coating, the Ge of large tensile stress can be obtained.But due to extension III-V race material require MBE or MOCVD, expensive, the speed of growth is slow, thus adds cost.
In addition, for oxide, metal etc., strain can change the special characteristic such as its transformation temperature, as VO
2; Or strain can change conductivity etc., can meet various application.But answer change oxide, strain metal making face variety of problems equally.
Therefore, a kind of new strain structure and preparation method thereof is provided to be necessary.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of strain structure and preparation method thereof, is difficult to prepare high tensile strain material and the problem that preparation speed is slow, cost is high for solving in prior art.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of strain structure, at least comprise the following steps:
S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
S2: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base;
S3: base-plates surface forms the second stressor layers described in a pair;
S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
Alternatively, described second stressor layers has tensile stress, and the unsettled two ends of pedestal described in a pair upsweep.
Alternatively, described second stressor layers has compression, and the unsettled two ends of pedestal described in a pair are curling downwards.
Alternatively, the material of described first stressor layers is metal, oxide or semiconductor; The material of described second stressor layers comprise in metal, oxide and semiconductor one or more.
Alternatively, described second stressor layers is individual layer or lamination layer structure.
Alternatively, the material of described first stressor layers is metal Ti, Cr, Pt, Au, Ag, Pd, Fe, or oxide Al
2o
3, ZnO, Si
3n
4, SiO, SiO
2, or semiconductor Si, Ge, III-V compounds of group, Si
xge
1-x, wherein 0<x<1; The material of described second stressor layers comprises metal Ti, Cr, Pt, Au, Ag, Pd, Fe, Co, Ni, or oxide Al
2o
3, ZnO, Si
3n
4, SiO, SiO
2, or semiconductor Si, Ge, III-V compounds of group, Si
xge
1-xin one or more, wherein 0<x<1.
Alternatively, described first stressor layers is different from the material of described second stressor layers.
Alternatively, described bridge is nano wire, micro wire or nano thin-film.
Alternatively, described pedestal is square, rectangle, trapezoidal, circular or oval.
Alternatively, the material of described sacrifice layer is selected from SiO
2, Si
3n
4, Ge, photoresist, one in PDMS and PMMA, and described sacrifice layer adopts different materials from described first stressor layers and the second stressor layers.
The present invention also provides the manufacture method of another kind of strain structure, at least comprises the following steps:
S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
S2: form the second stressor layers on described first stressor layers surface, and described second stressor layers is graphical, form a pair substrate;
S3: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base; Described pedestal to be positioned at below described substrate and with described substrates while stacking or partially overlap;
S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
The present invention also provides a kind of strain structure, comprising:
Substrate;
Be formed at the sacrifice layer of described substrate surface;
Patterned first stressor layers, is formed at described sacrificial layer surface; This patterned first stressor layers is bridge-like structure; Described bridge-like structure comprises pair of base and connects at least one bridge of this pair of base;
Be formed at the second stressor layers of described base-plates surface;
Described in described bridge and a pair, two ends are unsettled in opposite directions for pedestal, and these unsettled two ends are curling, and described bridge is extended state.
Alternatively, the two ends that pedestal described in a pair is unsettled upsweep or curling downwards.
Alternatively, described bridge is nano wire, micro wire or nano thin-film.
Alternatively, the material of described first stressor layers is metal, oxide or semiconductor; The material of described second stressor layers comprise in metal, oxide and semiconductor one or more.
As mentioned above, strain structure of the present invention and preparation method thereof, there is following beneficial effect: the present invention by forming the film providing stress on the pedestal of bridge-like structure, after sacrifice layer corrosion below bridge and pair of base in opposite directions two ends is fallen, described bridge and pair of base in opposite directions two ends are unsettled, because the second stressor layers of described base-plates surface exists stress, described bridge will be made with the butt curl that described pedestal is unsettled to stretch, form tensile strain material, obtain stress structure.The manufacture method of stress structure of the present invention applies tensile stress can to any materials in certain limit, and method is simple effectively, compatible with semiconductor technology, has cost low, and the advantage that manufacturing speed is fast.Stress structure of the present invention has high tensile stress, can improve the various performances of device.
Accompanying drawing explanation
Fig. 1 is shown as the process chart of the manufacture method of strain structure of the present invention.
Fig. 2 is shown as in the manufacture method of strain structure of the present invention structure cutaway view form sacrifice layer and the first stressor layers successively on substrate after.
Fig. 3 is shown as in the manufacture method of strain structure of the present invention and first stressor layers is graphically formed the structure vertical view after bridge-like structure.
Fig. 4 is shown as the structure vertical view in the manufacture method of strain structure of the present invention after pair of base surface forms the second stressor layers.
Fig. 5 is shown as the cutaway view of strain structure of the present invention.
Element numbers explanation
S1 ~ S4 step
1 substrate
2 sacrifice layers
3 first stressor layers
4 pedestals
5 bridges
6 second stressor layers
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 5.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
The invention provides a kind of manufacture method of strain structure, refer to Fig. 1, be shown as the process chart of the manufacture method of strain structure of the present invention, at least comprise the following steps:
Step S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
Step S2: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base;
Step S3: base-plates surface forms the second stressor layers described in a pair;
Step S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
First refer to Fig. 2, perform step S1: a substrate 1 is provided, forms sacrifice layer 2 and one first stressor layers 3 on described substrate 1 surface from bottom to top successively.
Concrete, described substrate 1 is conventional Semiconductor substrate, and as Si, Ge, III-V material etc., in the present embodiment, described substrate 1 is preferably Si substrate.
The material of described sacrifice layer 2 is selected from SiO
2, Si
3n
4, Ge, photoresist, one in PDMS and PMMA, and the material of described sacrifice layer adopts different materials from described first stressor layers and the second stressor layers.Wherein SiO
2thermal oxidation process can be adopted directly to be formed on a si substrate, or adopt chemical vapour deposition (CVD) to be formed in other type substrates; Si
3n
4low-pressure chemical vapor deposition technology or plasma enhanced chemical vapor deposition technology can be utilized to be formed over the substrate; PDMS (dimethyl silicone polymer) is a kind of polymeric material, and has good adhesiveness between silicon chip, and be formed on described substrate by methods such as spin coatings, PDMS is soluble in the organic solvents such as toluene; PMMA(polymethyl methacrylate), be dissolved in organic solvent, as phenol, methyl phenyl ethers anisole etc., can form good film by spin coating, have good dielectric property.In the present embodiment, described sacrifice layer 2 is preferably SiO
2, adopt thermal oxidation process directly to be formed on a si substrate.
The material of described first stressor layers 3 is metal, oxide or semiconductor, and wherein, metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd or Fe; Oxide includes but not limited to Al
2o
3, ZnO, Si
3n
4, SiO or SiO
2, semiconductor includes but not limited to Si, Ge, III-V compounds of group or Si
xge
1-x, wherein 0<x<1.Material for described first stressor layers 3 is metal or oxide, and the methods such as evaporation, sputtering, extension can be adopted to be formed; Material for described first stressor layers 3 is semiconductor, and the method such as chemical vapour deposition (CVD), extension can be adopted to be formed.In the present embodiment, the material of described first stressor layers 3, for Ge, preferably adopts epitaxy to be formed.
Then refer to Fig. 3, perform step S2: described first stressor layers 3 is graphical, form bridge-like structure; Described bridge-like structure comprises the pair of base 4 being formed at described sacrifice layer 2 surface and at least one bridge 5 connecting this pair of base 4.
Concrete, by photoetching and etching technics graphically described first stressor layers 3.The transverse width of described pedestal 4 is greater than longitudinal width of described bridge.Described bridge 5 is nano wire, micro wire, nano thin-film or other shape, described pedestal 4 in the horizontal plane be projected as square, rectangle, trapezoidal, circular, oval or other shape.In the present embodiment, described bridge 5, for nano wire, wherein, shows the situation of three nano wires in Fig. 2, and certainly, the number of described bridge 5 can be adjusted according to practical situations.
Refer to Fig. 4 again, perform step S3: pedestal 4 surface forms the second stressor layers 6 described in a pair.
Concrete, the material of described second stressor layers 6 comprise in metal, oxide and semiconductor one or more, wherein, metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd, Fe, Co and Ni, and oxide includes but not limited to Al
2o
3, ZnO, Si
3n
4, SiO and SiO
2; Semiconductor includes but not limited to Si, Ge, III-V compounds of group and Si
xge
1-xin one or more, wherein 0<x<1.Described second stressor layers 6 can be individual layer or lamination layer structure.
Described second stressor layers 6 applies compression or tensile stress to described pedestal 4.Material for described second stressor layers 6 is metal or oxide, and the methods such as evaporation, sputtering, extension can be adopted to be formed; Material for described second stressor layers 6 is semiconductor, and the method such as chemical vapour deposition (CVD), extension can be adopted to be formed.In the present embodiment, the material of described second stressor layers 6 is preferably Ti, Cr, Si
3n
4, SiO or SiO
2, wherein Ti or Cr adopts evaporation or sputtering method growth, Si
3n
4, SiO or SiO
2employing chemical vapour deposition technique is formed.
In general semi-conducting material adopts chemical gaseous phase depositing process than being easier to make monocrystalline, also becomes more readily available polycrystalline by the parameter of growth regulation or the mode of change growth; And metal, oxide etc. are difficult to make monocrystalline under normal circumstances, be all generally polycrystalline or amorphous.
Described first stressor layers 3 can adopt same material with described second stressor layers 6, by growth regulation parameter or change growth pattern, stress is not therebetween mated.In the present embodiment, described first stressor layers 3 preferably adopts different materials with described second stressor layers 6, such that described second stressor layers 6 is easier produces compression or tensile stress to described first stressor layers 3, that is applies compression or tensile stress to described pedestal 4.Because described pedestal is formed at described sacrifice layer 2 surface, this stress is in bond firmly.Above-mentioned stress comprises thermal stress etc.
Finally refer to Fig. 5, perform step S4: adopt wet etching to remove below described bridge 5 and the sacrifice layer 2 of described pedestal 4 in opposite directions below two ends, to make pedestal 4 described in described bridge 5 and a pair, two ends are unsettled in opposite directions, and these unsettled two ends are curling makes described bridge 5 stretch, and obtains strain structure.
In the present embodiment, described sacrifice layer 2 adopts silicon dioxide, in this step, adopts HF solution corrosion to fall below described bridge 5 and the sacrifice layer of described pedestal 4 in opposite directions below two ends, obtains hanging structure.Transverse width due to described pedestal 4 is greater than longitudinal width of described bridge, by the control corrosion rate time, described bridge 5 can be made completely unsettled, and described pedestal 4 part is unsettled.In other embodiments, if described sacrifice layer is photoresist, then can adopt the removals such as developer solution, if described sacrifice layer PDMS or PMMA, then organic solution can be adopted to remove.
Concrete, if described second stressor layers 6 has tensile stress, then the two ends that described in a pair, pedestal 4 is unsettled upsweep; If described second stressor layers 6 has compression, then the two ends that pedestal described in a pair is unsettled are curling downwards.In the present embodiment, preferably make described second stressor layers 6 have tensile stress, the unsettled end of described pedestal 4 is upsweeped, curl space is comparatively large, is conducive to making described bridge 5 level of stretch higher, has larger tensile stress.
For silica-based tensile strain Ge material, the carrier mobility of Ge device can be made to increase, improve the performance of MOS device, simultaneously high being with of tensile strain Ge material changes, and can improve the luminescent properties of Ge, is conducive to its application in photoelectric device.For the semiconductor such as strain Si, strain SiGe, stress can change the band structure of material, reduces the effective mass of charge carrier, reduces the scattering etc. of phonon, can improve the mobility of charge carrier equally, improve the performance of MOS device.For answering change oxide or strain metal, strain can change the special characteristics such as its transformation temperature, or changes its conductivity, is applicable to the application of different field.
So far, the manufacture method of strain structure of the present invention is adopted to complete the making of strain structure.The manufacture method of strain structure of the present invention by forming the film providing stress on the pedestal of bridge-like structure, after sacrifice layer corrosion below bridge and pair of base in opposite directions two ends is fallen, described bridge and pair of base in opposite directions two ends are unsettled, because the second stressor layers of described base-plates surface exists stress, described bridge will be made to stretch with the butt curl that described pedestal is unsettled, form tensile strain material, obtain stress structure.The manufacture method of stress structure of the present invention applies tensile stress can to any materials in certain limit, and method is simple effectively, compatible with semiconductor technology, has cost low, and the advantage that manufacturing speed is fast.The stress structure that the present invention makes has high tensile stress, can improve the various performances of device.
Embodiment two
The present embodiment adopts substantially identical technical scheme with embodiment one, and difference is that the sequencing of step S2 and step S3 adjusts to some extent.In embodiment one, first the first stressor layers is graphically formed bridge-like structure, then on the pedestal of bridge-like structure, form the second stressor layers; And in the present embodiment, then the second stressor layers is formed on described first stressor layers surface after forming the first stressor layers, wherein the second stressor layers overlaps with the pedestal of the follow-up bridge-like structure that will be formed, and then described first stressor layers is graphically formed bridge-like structure.The adjustment of this production order does not affect the final strain structure formed.
The present invention also provides the manufacture method of another kind of strain structure, at least comprises the following steps:
Step S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
Step S2: form the second stressor layers on described first stressor layers surface, and described second stressor layers is graphical, form a pair substrate;
Step S3: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base; Described pedestal to be positioned at below described substrate and with described substrates while stacking or partially overlap;
Step S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
In the present embodiment, each step is except sequencing, concrete implementation or method substantially identical with embodiment one, refer to the description of appropriate section in embodiment one, repeat no more herein.
Embodiment three
The present invention also provides a kind of strain structure, refers to Fig. 5, is shown as the generalized section of this strain structure, comprises:
Substrate 1;
Be formed at the sacrifice layer 2 on described substrate 1 surface;
Patterned first stressor layers, is formed at described sacrifice layer 2 surface; This patterned first stressor layers is bridge-like structure; Described bridge-like structure comprises pair of base 4 and connects at least one bridge 5 of this pair of base 4;
Be formed at second stressor layers 6 on described pedestal 4 surface;
Described in described bridge 5 and a pair, two ends are unsettled in opposite directions for pedestal 4, and these unsettled two ends are curling, and described bridge 5 is in extended state.
Concrete, the two ends that described in a pair, pedestal 4 is unsettled upsweep or curling downwards, and described bridge 5 is nano wire, micro wire or nano thin-film.
The material of described first stressor layers is metal, oxide or semiconductor, and wherein, metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd or Fe; Oxide includes but not limited to Al
2o
3, ZnO, Si
3n
4, SiO or SiO
2, semiconductor includes but not limited to Si, Ge, III-V compounds of group or Si
xge
1-x, wherein 0<x<1.Material for described first stressor layers is metal or oxide, and the methods such as evaporation, sputtering, extension can be adopted to be formed; Material for described first stressor layers is semiconductor, and the method such as chemical vapour deposition (CVD), extension can be adopted to be formed.In the present embodiment, the material of described first stressor layers 3 is preferably Ge, adopts epitaxy to be formed.
The material of described second stressor layers 6 comprise in metal, oxide and semiconductor one or more, wherein, metal includes but not limited to Ti, Cr, Pt, Au, Ag, Pd, Fe, Co and Ni, and oxide includes but not limited to Al
2o
3, ZnO, Si
3n
4, SiO and SiO
2; Semiconductor includes but not limited to Si, Ge, III-V compounds of group and Si
xge
1-xin one or more, wherein 0<x<1.Described second stressor layers 6 can be individual layer or lamination layer structure.In the present embodiment, described and the material of stressor layers 6 is preferably Ti, Cr, Si
3n
4, SiO or SiO
2.
Described first stressor layers 3 can adopt same material with described second stressor layers 6, also can adopt different materials.In the present embodiment, described first stressor layers 3 preferably adopts different materials with described second stressor layers 6, make that described second stressor layers 6 is easier produces compression or tensile stress to described first stressor layers 3, that is compression or tensile stress are applied to described pedestal 4, make described bridge 5 level of stretch higher, obtain larger tensile stress.
In strain structure of the present invention, the first stressor layers is bridge-like structure, and the bridge of this bridge-like structure and pair of base two ends are unsettled in opposite directions, owing to the pedestal of bridge-like structure being formed with the film (the second stressor layers) providing stress, the unsettled butt curl of described pedestal makes described bridge stretch, and forms high tensile strain material.Stress structure of the present invention has high tensile stress, is applicable to any materials in certain limit, can meet the application of different field, improves device performance.
In sum, strain structure of the present invention and preparation method thereof by forming the film providing stress on the pedestal of bridge-like structure, after sacrifice layer corrosion below bridge and pair of base in opposite directions two ends is fallen, described bridge and pair of base in opposite directions two ends are unsettled, because the second stressor layers of described base-plates surface exists stress, described bridge will be made with the butt curl that described pedestal is unsettled to stretch, form tensile strain material, obtain stress structure.The manufacture method of stress structure of the present invention applies tensile stress can to any materials in certain limit, and method is simple effectively, compatible with semiconductor technology, has cost low, and the advantage that manufacturing speed is fast.The stress structure that the present invention makes has high tensile stress, can improve the various performances of device.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (15)
1. a manufacture method for strain structure, is characterized in that, at least comprises the following steps:
S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
S2: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base;
S3: base-plates surface forms the second stressor layers described in a pair;
S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
2. the manufacture method of strain structure according to claim 1, is characterized in that: described second stressor layers has tensile stress, and the unsettled two ends of pedestal described in a pair upsweep.
3. the manufacture method of strain structure according to claim 1, is characterized in that: described second stressor layers has compression, and the unsettled two ends of pedestal described in a pair are curling downwards.
4. the manufacture method of strain structure according to claim 1, is characterized in that: the material of described first stressor layers is Si
3n
4, metal, oxide or semiconductor; The material of described second stressor layers comprises Si
3n
4, metal, one or more in oxide and semiconductor.
5. the manufacture method of strain structure according to claim 4, is characterized in that: described second stressor layers is individual layer or lamination layer structure.
6. the manufacture method of strain structure according to claim 4, is characterized in that: the material of described first stressor layers is Si
3n
4, metal Ti, Cr, Pt, Au, Ag, Pd, Fe, or oxide Al
2o
3, ZnO, SiO, SiO
2, or semiconductor Si, Ge, III-V compounds of group, Si
xge
1-x, wherein 0<x<1; The material of described second stressor layers comprises Si
3n
4, metal Ti, Cr, Pt, Au, Ag, Pd, Fe, Co, Ni, or oxide Al
2o
3, ZnO, SiO, SiO
2, or semiconductor Si, Ge, III-V compounds of group, Si
xge
1-xin one or more, wherein 0<x<1.
7. the manufacture method of the strain structure according to claim 1,4,5 or 6, is characterized in that: described first stressor layers is different from the material of described second stressor layers.
8. the manufacture method of strain structure according to claim 1, is characterized in that: described bridge is nano wire, micro wire or nano thin-film.
9. the manufacture method of strain structure according to claim 1, is characterized in that: described pedestal is square, rectangle, trapezoidal, circular or oval.
10. the manufacture method of strain structure according to claim 1, is characterized in that: the material of described sacrifice layer is selected from SiO
2, Si
3n
4, Ge, photoresist, one in PDMS and PMMA, and described sacrifice layer adopts different materials from described first stressor layers and the second stressor layers.
The manufacture method of 11. 1 kinds of strain structure, is characterized in that, at least comprises the following steps:
S1: provide a substrate, forms a sacrifice layer and one first stressor layers from bottom to top successively at described substrate surface;
S2: form the second stressor layers on described first stressor layers surface, and described second stressor layers is graphical, form a pair substrate;
S3: described first stressor layers is graphical, forms bridge-like structure; Described bridge-like structure comprises the pair of base being formed at described sacrificial layer surface and at least one bridge connecting this pair of base; Described pedestal to be positioned at below described substrate and with described substrates while stacking or partially overlap;
S4: adopt wet etching to remove below described bridge and the sacrifice layer of described pedestal in opposite directions below two ends, two ends are unsettled in opposite directions to make pedestal described in described bridge and a pair, and these unsettled two ends are curling makes described bridge stretch, and obtains strain structure.
12. 1 kinds of strain structure, comprising:
Substrate;
Be formed at the sacrifice layer of described substrate surface;
Patterned first stressor layers, is formed at described sacrificial layer surface; This patterned first stressor layers is bridge-like structure; Described bridge-like structure comprises pair of base and connects at least one bridge of this pair of base;
Be formed at the second stressor layers of described base-plates surface;
It is characterized in that:
Described in described bridge and a pair, two ends are unsettled in opposite directions for pedestal, and these unsettled two ends are curling, and described bridge is extended state.
13. strain structure according to claim 12, is characterized in that: the unsettled two ends of pedestal described in a pair upsweep or curling downwards.
14. strain structure according to claim 12, is characterized in that: described bridge is nano wire, micro wire or nano thin-film.
15. strain structure according to claim 12, is characterized in that: the material of described first stressor layers is Si
3n
4, metal, oxide or semiconductor; The material of described second stressor layers comprises Si
3n
4, metal, one or more in oxide and semiconductor.
Priority Applications (1)
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