TW200746454A - Semiconductor light-emitting device and fabricating method of the same - Google Patents
Semiconductor light-emitting device and fabricating method of the sameInfo
- Publication number
- TW200746454A TW200746454A TW095132814A TW95132814A TW200746454A TW 200746454 A TW200746454 A TW 200746454A TW 095132814 A TW095132814 A TW 095132814A TW 95132814 A TW95132814 A TW 95132814A TW 200746454 A TW200746454 A TW 200746454A
- Authority
- TW
- Taiwan
- Prior art keywords
- emitting device
- semiconductor light
- same
- fabricating method
- type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- -1 ZnO compound Chemical class 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
- H01L21/02403—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005257781A JP3945782B2 (ja) | 2005-09-06 | 2005-09-06 | 半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746454A true TW200746454A (en) | 2007-12-16 |
TWI333698B TWI333698B (zh) | 2010-11-21 |
Family
ID=37835830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095132814A TW200746454A (en) | 2005-09-06 | 2006-09-06 | Semiconductor light-emitting device and fabricating method of the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US7964868B2 (zh) |
JP (1) | JP3945782B2 (zh) |
KR (1) | KR100984086B1 (zh) |
CN (1) | CN100555687C (zh) |
TW (1) | TW200746454A (zh) |
WO (1) | WO2007029711A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008123545A1 (ja) * | 2007-04-04 | 2008-10-16 | Rohm Co., Ltd. | ZnO系薄膜 |
JP5025326B2 (ja) * | 2007-05-14 | 2012-09-12 | ローム株式会社 | 酸化物半導体受光素子 |
JP5019326B2 (ja) * | 2008-02-23 | 2012-09-05 | シチズンホールディングス株式会社 | MgaZn1−aO単結晶薄膜の作製方法 |
JP5392708B2 (ja) * | 2008-06-30 | 2014-01-22 | 国立大学法人東京農工大学 | ヘテロエピタキシャル成長方法 |
DE102008039183A1 (de) * | 2008-08-20 | 2010-02-25 | Humboldt-Universität Zu Berlin | Verfahren zum Herstellen eines zinkoxidhaltigen Materials und ein Halbleiterbauelement mit einem zinkoxidhaltigen Material |
JP5682938B2 (ja) * | 2008-08-29 | 2015-03-11 | シチズンホールディングス株式会社 | 半導体発光素子 |
JP5651298B2 (ja) * | 2008-10-24 | 2015-01-07 | シチズン時計マニュファクチャリング株式会社 | プラズマ援用反応性薄膜形成装置およびそれを用いた薄膜形成方法 |
JP2010100913A (ja) * | 2008-10-24 | 2010-05-06 | Citizen Tohoku Kk | 薄膜形成装置および薄膜形成方法 |
JP5355221B2 (ja) | 2009-05-25 | 2013-11-27 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
JP5638772B2 (ja) * | 2009-05-25 | 2014-12-10 | スタンレー電気株式会社 | 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法 |
JP5589310B2 (ja) * | 2009-06-03 | 2014-09-17 | 株式会社ニコン | 被膜形成物の製造方法 |
JP5237917B2 (ja) * | 2009-10-30 | 2013-07-17 | スタンレー電気株式会社 | ZnO系化合物半導体の製造方法 |
KR20130043063A (ko) | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
CN102676994B (zh) * | 2012-06-07 | 2014-07-16 | 上海硅酸盐研究所中试基地 | 具有内禀铁磁性的ZnO基稀磁半导体薄膜及其制备方法 |
CN104638019B (zh) * | 2015-02-02 | 2017-07-25 | 青岛大学 | 一种氧化锌纳米纤维同质p‑n结器件及其制备方法 |
KR102446411B1 (ko) | 2015-12-16 | 2022-09-22 | 삼성전자주식회사 | 멀티층 그래핀 및 그 형성방법과 멀티층 그래핀을 포함하는 소자 및 그 제조방법 |
TWI617047B (zh) * | 2017-06-30 | 2018-03-01 | 膠囊化基板、製造方法及具該基板的高能隙元件 | |
US11949043B2 (en) * | 2020-10-29 | 2024-04-02 | PlayNitride Display Co., Ltd. | Micro light-emitting diode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020084455A1 (en) * | 1999-03-30 | 2002-07-04 | Jeffery T. Cheung | Transparent and conductive zinc oxide film with low growth temperature |
JP4567910B2 (ja) | 2001-05-01 | 2010-10-27 | スタンレー電気株式会社 | 半導体結晶の成長方法 |
US6624441B2 (en) * | 2002-02-07 | 2003-09-23 | Eagle-Picher Technologies, Llc | Homoepitaxial layers of p-type zinc oxide and the fabrication thereof |
JP2003282434A (ja) | 2002-03-20 | 2003-10-03 | Ngk Insulators Ltd | ZnO系エピタキシャル成長基板、ZnO系エピタキシャル下地基板、及びZnO系膜の製造方法 |
US6887736B2 (en) * | 2002-06-24 | 2005-05-03 | Cermet, Inc. | Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
JP4270885B2 (ja) * | 2003-01-09 | 2009-06-03 | シャープ株式会社 | 酸化物半導体発光素子 |
JP4252809B2 (ja) | 2003-01-15 | 2009-04-08 | スタンレー電気株式会社 | ZnO結晶の製造方法及びZnO系LEDの製造方法 |
JP2004247411A (ja) | 2003-02-12 | 2004-09-02 | Sharp Corp | 半導体発光素子および製造方法 |
JP2004247681A (ja) | 2003-02-17 | 2004-09-02 | Sharp Corp | 酸化物半導体発光素子 |
JP4045499B2 (ja) | 2003-03-27 | 2008-02-13 | 信越半導体株式会社 | ZnO系半導体素子の製造方法 |
CN100337336C (zh) * | 2003-12-05 | 2007-09-12 | 中国科学院上海硅酸盐研究所 | 一种氧化锌同质结p-n结材料及其制备方法 |
JP4868709B2 (ja) * | 2004-03-09 | 2012-02-01 | 三洋電機株式会社 | 発光素子 |
-
2005
- 2005-09-06 JP JP2005257781A patent/JP3945782B2/ja not_active Expired - Fee Related
-
2006
- 2006-09-05 KR KR1020087006091A patent/KR100984086B1/ko not_active IP Right Cessation
- 2006-09-05 CN CNB2006800326141A patent/CN100555687C/zh not_active Expired - Fee Related
- 2006-09-05 WO PCT/JP2006/317569 patent/WO2007029711A1/ja active Application Filing
- 2006-09-05 US US12/065,795 patent/US7964868B2/en not_active Expired - Fee Related
- 2006-09-06 TW TW095132814A patent/TW200746454A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2007029711A1 (ja) | 2007-03-15 |
TWI333698B (zh) | 2010-11-21 |
US20090267063A1 (en) | 2009-10-29 |
CN101258617A (zh) | 2008-09-03 |
US7964868B2 (en) | 2011-06-21 |
CN100555687C (zh) | 2009-10-28 |
JP2007073672A (ja) | 2007-03-22 |
KR100984086B1 (ko) | 2010-09-30 |
JP3945782B2 (ja) | 2007-07-18 |
KR20080035694A (ko) | 2008-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |