TW200746454A - Semiconductor light-emitting device and fabricating method of the same - Google Patents

Semiconductor light-emitting device and fabricating method of the same

Info

Publication number
TW200746454A
TW200746454A TW095132814A TW95132814A TW200746454A TW 200746454 A TW200746454 A TW 200746454A TW 095132814 A TW095132814 A TW 095132814A TW 95132814 A TW95132814 A TW 95132814A TW 200746454 A TW200746454 A TW 200746454A
Authority
TW
Taiwan
Prior art keywords
emitting device
semiconductor light
same
fabricating method
type
Prior art date
Application number
TW095132814A
Other languages
English (en)
Other versions
TWI333698B (zh
Inventor
Akira Nakagawa
Yasube Kashiwaba
Ikuo Niikura
Original Assignee
Citizen Tohoku Co Ltd
Nat University Iwate Univ Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Tohoku Co Ltd, Nat University Iwate Univ Inc filed Critical Citizen Tohoku Co Ltd
Publication of TW200746454A publication Critical patent/TW200746454A/zh
Application granted granted Critical
Publication of TWI333698B publication Critical patent/TWI333698B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
TW095132814A 2005-09-06 2006-09-06 Semiconductor light-emitting device and fabricating method of the same TW200746454A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005257781A JP3945782B2 (ja) 2005-09-06 2005-09-06 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
TW200746454A true TW200746454A (en) 2007-12-16
TWI333698B TWI333698B (zh) 2010-11-21

Family

ID=37835830

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132814A TW200746454A (en) 2005-09-06 2006-09-06 Semiconductor light-emitting device and fabricating method of the same

Country Status (6)

Country Link
US (1) US7964868B2 (zh)
JP (1) JP3945782B2 (zh)
KR (1) KR100984086B1 (zh)
CN (1) CN100555687C (zh)
TW (1) TW200746454A (zh)
WO (1) WO2007029711A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008123545A1 (ja) * 2007-04-04 2008-10-16 Rohm Co., Ltd. ＺｎＯ系薄膜
JP5025326B2 (ja) * 2007-05-14 2012-09-12 ローム株式会社 酸化物半導体受光素子
JP5019326B2 (ja) * 2008-02-23 2012-09-05 シチズンホールディングス株式会社 ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法
JP5392708B2 (ja) * 2008-06-30 2014-01-22 国立大学法人東京農工大学 ヘテロエピタキシャル成長方法
DE102008039183A1 (de) * 2008-08-20 2010-02-25 Humboldt-Universität Zu Berlin Verfahren zum Herstellen eines zinkoxidhaltigen Materials und ein Halbleiterbauelement mit einem zinkoxidhaltigen Material
JP5682938B2 (ja) * 2008-08-29 2015-03-11 シチズンホールディングス株式会社 半導体発光素子
JP5651298B2 (ja) * 2008-10-24 2015-01-07 シチズン時計マニュファクチャリング株式会社 プラズマ援用反応性薄膜形成装置およびそれを用いた薄膜形成方法
JP2010100913A (ja) * 2008-10-24 2010-05-06 Citizen Tohoku Kk 薄膜形成装置および薄膜形成方法
JP5355221B2 (ja) 2009-05-25 2013-11-27 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法
JP5638772B2 (ja) * 2009-05-25 2014-12-10 スタンレー電気株式会社 酸化亜鉛系半導体の成長方法及び半導体発光素子の製造方法
JP5589310B2 (ja) * 2009-06-03 2014-09-17 株式会社ニコン 被膜形成物の製造方法
JP5237917B2 (ja) * 2009-10-30 2013-07-17 スタンレー電気株式会社 ＺｎＯ系化合物半導体の製造方法
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN102676994B (zh) * 2012-06-07 2014-07-16 上海硅酸盐研究所中试基地 具有内禀铁磁性的ZnO基稀磁半导体薄膜及其制备方法
CN104638019B (zh) * 2015-02-02 2017-07-25 青岛大学 一种氧化锌纳米纤维同质p‑n结器件及其制备方法
KR102446411B1 (ko) 2015-12-16 2022-09-22 삼성전자주식회사 멀티층 그래핀 및 그 형성방법과 멀티층 그래핀을 포함하는 소자 및 그 제조방법
TWI617047B (zh) * 2017-06-30 2018-03-01 膠囊化基板、製造方法及具該基板的高能隙元件
US11949043B2 (en) * 2020-10-29 2024-04-02 PlayNitride Display Co., Ltd. Micro light-emitting diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020084455A1 (en) * 1999-03-30 2002-07-04 Jeffery T. Cheung Transparent and conductive zinc oxide film with low growth temperature
JP4567910B2 (ja) 2001-05-01 2010-10-27 スタンレー電気株式会社 半導体結晶の成長方法
US6624441B2 (en) * 2002-02-07 2003-09-23 Eagle-Picher Technologies, Llc Homoepitaxial layers of p-type zinc oxide and the fabrication thereof
JP2003282434A (ja) 2002-03-20 2003-10-03 Ngk Insulators Ltd ＺｎＯ系エピタキシャル成長基板、ＺｎＯ系エピタキシャル下地基板、及びＺｎＯ系膜の製造方法
US6887736B2 (en) * 2002-06-24 2005-05-03 Cermet, Inc. Method of forming a p-type group II-VI semiconductor crystal layer on a substrate
JP4270885B2 (ja) * 2003-01-09 2009-06-03 シャープ株式会社 酸化物半導体発光素子
JP4252809B2 (ja) 2003-01-15 2009-04-08 スタンレー電気株式会社 ＺｎＯ結晶の製造方法及びＺｎＯ系ＬＥＤの製造方法
JP2004247411A (ja) 2003-02-12 2004-09-02 Sharp Corp 半導体発光素子および製造方法
JP2004247681A (ja) 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
JP4045499B2 (ja) 2003-03-27 2008-02-13 信越半導体株式会社 ＺｎＯ系半導体素子の製造方法
CN100337336C (zh) * 2003-12-05 2007-09-12 中国科学院上海硅酸盐研究所 一种氧化锌同质结p－n结材料及其制备方法
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子

Also Published As

Publication number Publication date
WO2007029711A1 (ja) 2007-03-15
TWI333698B (zh) 2010-11-21
US20090267063A1 (en) 2009-10-29
CN101258617A (zh) 2008-09-03
US7964868B2 (en) 2011-06-21
CN100555687C (zh) 2009-10-28
JP2007073672A (ja) 2007-03-22
KR100984086B1 (ko) 2010-09-30
JP3945782B2 (ja) 2007-07-18
KR20080035694A (ko) 2008-04-23

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