TW200704291A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
TW200704291A
TW200704291A TW095124058A TW95124058A TW200704291A TW 200704291 A TW200704291 A TW 200704291A TW 095124058 A TW095124058 A TW 095124058A TW 95124058 A TW95124058 A TW 95124058A TW 200704291 A TW200704291 A TW 200704291A
Authority
TW
Taiwan
Prior art keywords
plasma processing
vacuum
plasma
reducing
processing apparatus
Prior art date
Application number
TW095124058A
Other languages
English (en)
Inventor
Hideo Sugai
Tetsuya Ide
Atsushi Sasaki
Kazufumi Azuma
Original Assignee
Hideo Sugai
Adv Lcd Tech Dev Ct Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hideo Sugai, Adv Lcd Tech Dev Ct Co Ltd filed Critical Hideo Sugai
Publication of TW200704291A publication Critical patent/TW200704291A/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW095124058A 2005-07-05 2006-06-30 Plasma processing apparatus and plasma processing method TW200704291A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005196555A JP4878782B2 (ja) 2005-07-05 2005-07-05 プラズマ処理装置及びプラズマ処理方法

Publications (1)

Publication Number Publication Date
TW200704291A true TW200704291A (en) 2007-01-16

Family

ID=37604441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124058A TW200704291A (en) 2005-07-05 2006-06-30 Plasma processing apparatus and plasma processing method

Country Status (4)

Country Link
US (1) US20080105650A1 (zh)
JP (1) JP4878782B2 (zh)
TW (1) TW200704291A (zh)
WO (1) WO2007004576A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427183B (zh) * 2010-11-25 2014-02-21 Ind Tech Res Inst 電漿處理裝置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159763A (ja) * 2006-12-22 2008-07-10 Canon Inc プラズマ処理装置
ES2581378T3 (es) * 2008-06-20 2016-09-05 Volker Probst Dispositivo de procesamiento y procedimiento para procesar productos de procesamiento apilados
JP5444218B2 (ja) * 2008-07-04 2014-03-19 東京エレクトロン株式会社 プラズマ処理装置および誘電体窓の温度調節機構
JP5863457B2 (ja) * 2008-11-28 2016-02-16 プロブスト、フォルカー 平坦基板にセレン、硫黄元素処理で半導体層と被覆基板を製造する方法
US8441494B2 (en) * 2009-04-23 2013-05-14 Vmware, Inc. Method and system for copying a framebuffer for transmission to a remote display
US20110079288A1 (en) * 2009-10-01 2011-04-07 Bruker Biospin Corporation Method and apparatus for preventing energy leakage from electrical transmission lines
JP5403151B2 (ja) * 2010-03-31 2014-01-29 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、プラズマ処理装置、およびプラズマ処理装置用誘電体窓の取り付け方法
JP5762708B2 (ja) * 2010-09-16 2015-08-12 国立大学法人名古屋大学 プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP6054314B2 (ja) 2011-03-01 2016-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板搬送及びラジカル閉じ込めのための方法及び装置
WO2012118886A2 (en) * 2011-03-01 2012-09-07 Applied Materials, Inc. Vacuum chambers with shared pump
WO2012118897A2 (en) 2011-03-01 2012-09-07 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US20130189838A1 (en) * 2012-01-20 2013-07-25 Makoto Honda Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
CN104137248B (zh) 2012-02-29 2017-03-22 应用材料公司 配置中的除污及剥除处理腔室
US9625838B2 (en) 2014-11-28 2017-04-18 Canon Kabushiki Kaisha Electrophotographic apparatus, process cartridge, and image forming method
US20200312629A1 (en) * 2019-03-25 2020-10-01 Recarbon, Inc. Controlling exhaust gas pressure of a plasma reactor for plasma stability

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6231112A (ja) * 1985-08-02 1987-02-10 Fujitsu Ltd マイクロ波プラズマ反応装置
US4859908A (en) * 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
US4912367A (en) * 1988-04-14 1990-03-27 Hughes Aircraft Company Plasma-assisted high-power microwave generator
US6444037B1 (en) * 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
JP3807820B2 (ja) * 1997-06-30 2006-08-09 東京エレクトロン株式会社 プラズマ処理方法
JP2000021599A (ja) * 1998-06-30 2000-01-21 Toshiba Corp プラズマ発生装置
JP4441038B2 (ja) * 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JPWO2003037503A1 (ja) * 2001-10-30 2005-02-17 節 安斎 マイクロ波プラズマ発生装置
JP2004235434A (ja) * 2003-01-30 2004-08-19 Rohm Co Ltd プラズマ処理装置
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
JP2005044793A (ja) * 2003-07-04 2005-02-17 Advanced Lcd Technologies Development Center Co Ltd プラズマ処理装置およびプラズマ処理方法
US8136479B2 (en) * 2004-03-19 2012-03-20 Sharp Kabushiki Kaisha Plasma treatment apparatus and plasma treatment method
JP2004328004A (ja) * 2004-05-31 2004-11-18 Toshiba Corp プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427183B (zh) * 2010-11-25 2014-02-21 Ind Tech Res Inst 電漿處理裝置

Also Published As

Publication number Publication date
US20080105650A1 (en) 2008-05-08
WO2007004576A1 (ja) 2007-01-11
JP4878782B2 (ja) 2012-02-15
JP2007018771A (ja) 2007-01-25

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