WO2008146834A1 - レジスト除去方法、半導体製造方法、及びレジスト除去装置 - Google Patents

レジスト除去方法、半導体製造方法、及びレジスト除去装置 Download PDF

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Publication number
WO2008146834A1
WO2008146834A1 PCT/JP2008/059786 JP2008059786W WO2008146834A1 WO 2008146834 A1 WO2008146834 A1 WO 2008146834A1 JP 2008059786 W JP2008059786 W JP 2008059786W WO 2008146834 A1 WO2008146834 A1 WO 2008146834A1
Authority
WO
WIPO (PCT)
Prior art keywords
resist
layer
resist removing
undeteriorated
substrate
Prior art date
Application number
PCT/JP2008/059786
Other languages
English (en)
French (fr)
Inventor
Hiroaki Yamamoto
Takashi Minamihonoki
Shinji Masuoka
Yoshishige Ninomiya
Kyota Morihira
Original Assignee
Sharp Kabushiki Kaisha
Aqua Science Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US12/601,913 priority Critical patent/US20100216312A1/en
Application filed by Sharp Kabushiki Kaisha, Aqua Science Corporation filed Critical Sharp Kabushiki Kaisha
Publication of WO2008146834A1 publication Critical patent/WO2008146834A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

　変質層と未変質層からなるレジストを基板から除去するレジスト除去装置は、窒素、酸素、水素、及び水蒸気のいずれか、あるいはそれらの混合ガスを低圧力下でプラズマ処理して生成したラジカルを前記基板に接触させてレジスト除去を行う工程と、前記基板にオゾン水を接触させてレジスト除去を行う工程を実行する。ラジカルによるレジスト除去工程では、レジスト表面の変質層の形成条件に応じラジカルの接触時間を制御して未変質層の大部分を残す。または、レジスト除去中に排出される反応ガスの分析結果に応じて工程制御を行い、未変質層の大部分を残す。
PCT/JP2008/059786 2007-06-01 2008-05-28 レジスト除去方法、半導体製造方法、及びレジスト除去装置 WO2008146834A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/601,913 US20100216312A1 (en) 2007-06-01 2008-05-23 Resist removing method, semiconductor manufacturing method, and resist removing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007146396A JP5332052B2 (ja) 2007-06-01 2007-06-01 レジスト除去方法、半導体製造方法、及びレジスト除去装置
JP2007-146396 2007-06-01

Publications (1)

Publication Number Publication Date
WO2008146834A1 true WO2008146834A1 (ja) 2008-12-04

Family

ID=40075071

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059786 WO2008146834A1 (ja) 2007-06-01 2008-05-28 レジスト除去方法、半導体製造方法、及びレジスト除去装置

Country Status (5)

Country Link
US (1) US20100216312A1 (ja)
JP (1) JP5332052B2 (ja)
KR (1) KR20100027178A (ja)
TW (1) TW200913009A (ja)
WO (1) WO2008146834A1 (ja)

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US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
JP2009218548A (ja) * 2008-02-12 2009-09-24 Tsukuba Semi Technology:Kk 高ドーズインプラ工程のレジスト除去方法及びレジスト除去装置
JP2010132512A (ja) * 2008-12-08 2010-06-17 Sasakura Engineering Co Ltd オゾン水供給装置、及び、洗浄装置
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US9613825B2 (en) * 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
US9786471B2 (en) 2011-12-27 2017-10-10 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma etcher design with effective no-damage in-situ ash
CN105873969B (zh) 2013-12-06 2018-09-04 株式会社Lg化学 嵌段共聚物
US10239980B2 (en) 2013-12-06 2019-03-26 Lg Chem, Ltd. Block copolymer
EP3078654B1 (en) 2013-12-06 2021-07-07 LG Chem, Ltd. Monomer and block copolymer
EP3078694B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
CN106459326B (zh) 2013-12-06 2019-08-13 株式会社Lg化学 嵌段共聚物
WO2015084127A1 (ko) 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
WO2015084123A1 (ko) 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
CN105899560B (zh) 2013-12-06 2018-01-12 株式会社Lg化学 嵌段共聚物
EP3078690B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
EP3078689B1 (en) 2013-12-06 2020-12-02 LG Chem, Ltd. Block copolymer
CN105934455B (zh) 2013-12-06 2019-01-18 株式会社Lg化学 嵌段共聚物
EP3078692B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
JP6361893B2 (ja) 2013-12-06 2018-07-25 エルジー・ケム・リミテッド ブロック共重合体
US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
US9514954B2 (en) * 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
CN107075050B (zh) 2014-09-30 2019-08-13 株式会社Lg化学 嵌段共聚物
WO2016053007A1 (ko) * 2014-09-30 2016-04-07 주식회사 엘지화학 패턴화 기판의 제조 방법
EP3214102B1 (en) 2014-09-30 2022-01-05 LG Chem, Ltd. Block copolymer
US10703897B2 (en) 2014-09-30 2020-07-07 Lg Chem, Ltd. Block copolymer
US10287430B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Method of manufacturing patterned substrate
CN107075051B (zh) 2014-09-30 2019-09-03 株式会社Lg化学 嵌段共聚物
EP3202798B1 (en) 2014-09-30 2022-01-12 LG Chem, Ltd. Block copolymer
JP6538158B2 (ja) 2014-09-30 2019-07-03 エルジー・ケム・リミテッド ブロック共重合体
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JP2002100613A (ja) * 2000-09-25 2002-04-05 Nec Kyushu Ltd アッシング方法およびアッシング装置
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Also Published As

Publication number Publication date
TW200913009A (en) 2009-03-16
JP5332052B2 (ja) 2013-11-06
JP2008300704A (ja) 2008-12-11
KR20100027178A (ko) 2010-03-10
US20100216312A1 (en) 2010-08-26

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