TW200802597A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method

Info

Publication number
TW200802597A
TW200802597A TW096111086A TW96111086A TW200802597A TW 200802597 A TW200802597 A TW 200802597A TW 096111086 A TW096111086 A TW 096111086A TW 96111086 A TW96111086 A TW 96111086A TW 200802597 A TW200802597 A TW 200802597A
Authority
TW
Taiwan
Prior art keywords
electrode
processing
plasma
plasma processing
processing vessel
Prior art date
Application number
TW096111086A
Other languages
Chinese (zh)
Other versions
TWI408744B (en
Inventor
Naoki Matsumoto
Yoshinobu Hayakawa
Hidetoshi Hanaoka
Noriaki Kodama
Chishio Koshimizu
Manabu Iwata
Satoshi Tanaka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200802597A publication Critical patent/TW200802597A/en
Application granted granted Critical
Publication of TWI408744B publication Critical patent/TWI408744B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes

Abstract

A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
TW096111086A 2006-03-30 2007-03-29 Plasma processing device and plasma processing method TWI408744B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006092860A JP5064707B2 (en) 2006-03-30 2006-03-30 Plasma processing equipment

Publications (2)

Publication Number Publication Date
TW200802597A true TW200802597A (en) 2008-01-01
TWI408744B TWI408744B (en) 2013-09-11

Family

ID=38639185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111086A TWI408744B (en) 2006-03-30 2007-03-29 Plasma processing device and plasma processing method

Country Status (4)

Country Link
JP (1) JP5064707B2 (en)
KR (1) KR100841118B1 (en)
CN (1) CN100517563C (en)
TW (1) TWI408744B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681068B (en) * 2017-11-01 2020-01-01 日商佳能特機股份有限公司 Substrate processing device and film forming device
TWI793196B (en) * 2017-10-19 2023-02-21 日商東京威力科創股份有限公司 Processing device

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003382B1 (en) * 2008-02-13 2010-12-22 주식회사 유진테크 plasma processing apparatus and plasma processing method
JP5281309B2 (en) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 Plasma etching apparatus, plasma etching method, and computer-readable storage medium
US20100098875A1 (en) * 2008-10-17 2010-04-22 Andreas Fischer Pre-coating and wafer-less auto-cleaning system and method
JP5591573B2 (en) * 2009-03-30 2014-09-17 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP5689294B2 (en) * 2010-11-25 2015-03-25 東京エレクトロン株式会社 Processing equipment
JP5762841B2 (en) * 2011-06-21 2015-08-12 東京エレクトロン株式会社 Semiconductor manufacturing equipment
JP5808012B2 (en) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 Plasma processing equipment
CN102800548A (en) * 2012-08-29 2012-11-28 上海宏力半导体制造有限公司 Semiconductor manufacturing device and maintenance method thereof
JP6242288B2 (en) * 2014-05-15 2017-12-06 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
CN105575796A (en) * 2014-10-13 2016-05-11 友威科技股份有限公司 Plasma etching device for printed circuit board
CN105744783A (en) * 2014-12-09 2016-07-06 友威科技股份有限公司 Multi-electrode etching device
JP2017033982A (en) * 2015-07-29 2017-02-09 東京エレクトロン株式会社 Method for etching multilayer film
JP7138550B2 (en) * 2018-11-29 2022-09-16 東京エレクトロン株式会社 Substrate processing equipment

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4493756B2 (en) * 1999-08-20 2010-06-30 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
JP3670206B2 (en) * 2000-11-06 2005-07-13 アルプス電気株式会社 Performance evaluation method, maintenance method, performance management system, performance confirmation system, and plasma processing apparatus for plasma processing apparatus or plasma processing system
JP2004063662A (en) * 2002-07-26 2004-02-26 Hitachi Kokusai Electric Inc Plasma processor
JP4775834B2 (en) * 2002-08-05 2011-09-21 東京エレクトロン株式会社 Etching method
US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
JP4699127B2 (en) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US7037855B2 (en) * 2004-08-31 2006-05-02 Asm Japan K.K. Method of forming fluorine-doped low-dielectric-constant insulating film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793196B (en) * 2017-10-19 2023-02-21 日商東京威力科創股份有限公司 Processing device
TWI681068B (en) * 2017-11-01 2020-01-01 日商佳能特機股份有限公司 Substrate processing device and film forming device

Also Published As

Publication number Publication date
JP2007266529A (en) 2007-10-11
TWI408744B (en) 2013-09-11
JP5064707B2 (en) 2012-10-31
KR20070098587A (en) 2007-10-05
KR100841118B1 (en) 2008-06-24
CN100517563C (en) 2009-07-22
CN101047113A (en) 2007-10-03

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