TW200636909A - Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement - Google Patents
Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancementInfo
- Publication number
- TW200636909A TW200636909A TW095112247A TW95112247A TW200636909A TW 200636909 A TW200636909 A TW 200636909A TW 095112247 A TW095112247 A TW 095112247A TW 95112247 A TW95112247 A TW 95112247A TW 200636909 A TW200636909 A TW 200636909A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- bulk
- soi
- power
- crystal orientation
- Prior art date
Links
- 230000003044 adaptive effect Effects 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/107,611 US7605429B2 (en) | 2005-04-15 | 2005-04-15 | Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200636909A true TW200636909A (en) | 2006-10-16 |
Family
ID=37107693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095112247A TW200636909A (en) | 2005-04-15 | 2006-04-06 | Hybrid crystal orientation CMOS structure for adaptive well biasing and for power and performance enhancement |
Country Status (6)
Country | Link |
---|---|
US (2) | US7605429B2 (zh) |
EP (1) | EP1875507A4 (zh) |
JP (1) | JP2008536335A (zh) |
CN (1) | CN100524783C (zh) |
TW (1) | TW200636909A (zh) |
WO (1) | WO2006113077A2 (zh) |
Families Citing this family (93)
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US6793584B2 (en) * | 2002-05-02 | 2004-09-21 | Gkn Driveline North America, Inc. | High speed joint labyrinth style vent |
US6864104B2 (en) | 2002-06-28 | 2005-03-08 | Progressant Technologies, Inc. | Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects |
JP2004047844A (ja) * | 2002-07-15 | 2004-02-12 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US20040222436A1 (en) | 2003-05-09 | 2004-11-11 | International Business Machines Corporation | Bicmos technology on soi substrates |
US7329923B2 (en) | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
KR100539243B1 (ko) * | 2003-10-04 | 2005-12-27 | 삼성전자주식회사 | 부분 에스오아이 기판에 구현된 에스램 소자 |
US7304354B2 (en) * | 2004-02-17 | 2007-12-04 | Silicon Space Technology Corp. | Buried guard ring and radiation hardened isolation structures and fabrication methods |
US6949420B1 (en) * | 2004-03-12 | 2005-09-27 | Sony Corporation | Silicon-on-insulator (SOI) substrate having dual surface crystallographic orientations and method of forming same |
-
2005
- 2005-04-15 US US11/107,611 patent/US7605429B2/en active Active
-
2006
- 2006-03-30 EP EP06740000A patent/EP1875507A4/en not_active Withdrawn
- 2006-03-30 CN CNB2006800093334A patent/CN100524783C/zh not_active Expired - Fee Related
- 2006-03-30 WO PCT/US2006/011558 patent/WO2006113077A2/en active Search and Examination
- 2006-03-30 JP JP2008506492A patent/JP2008536335A/ja active Pending
- 2006-04-06 TW TW095112247A patent/TW200636909A/zh unknown
-
2007
- 2007-09-24 US US11/859,889 patent/US7629233B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US7629233B2 (en) | 2009-12-08 |
WO2006113077A3 (en) | 2007-04-12 |
CN100524783C (zh) | 2009-08-05 |
US20080009114A1 (en) | 2008-01-10 |
JP2008536335A (ja) | 2008-09-04 |
WO2006113077A2 (en) | 2006-10-26 |
US20060231893A1 (en) | 2006-10-19 |
EP1875507A4 (en) | 2009-08-05 |
CN101147259A (zh) | 2008-03-19 |
EP1875507A2 (en) | 2008-01-09 |
US7605429B2 (en) | 2009-10-20 |
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