TW200506937A - Non-volatile semiconductor memory device, and semiconductor memory IC device - Google Patents

Non-volatile semiconductor memory device, and semiconductor memory IC device

Info

Publication number
TW200506937A
TW200506937A TW093107673A TW93107673A TW200506937A TW 200506937 A TW200506937 A TW 200506937A TW 093107673 A TW093107673 A TW 093107673A TW 93107673 A TW93107673 A TW 93107673A TW 200506937 A TW200506937 A TW 200506937A
Authority
TW
Taiwan
Prior art keywords
writing
semiconductor memory
voltage
constant current
data
Prior art date
Application number
TW093107673A
Other languages
English (en)
Other versions
TWI352994B (zh
Inventor
Toshihiro Tanaka
Takashi Yamaki
Yutaka Shinagawa
Daisuke Okada
Digh Hisamoto
Kan Yasui
Tetsuya Ishimaru
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200506937A publication Critical patent/TW200506937A/zh
Application granted granted Critical
Publication of TWI352994B publication Critical patent/TWI352994B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D3/00—Cutting work characterised by the nature of the cut made; Apparatus therefor
    • B26D3/06—Grooving involving removal of material from the surface of the work
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D5/00—Arrangements for operating and controlling machines or devices for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D5/08—Means for actuating the cutting member to effect the cut
    • B26D5/086—Electric, magnetic, piezoelectric, electro-magnetic means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/06—Arrangements for feeding or delivering work of other than sheet, web, or filamentary form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/26—Means for mounting or adjusting the cutting member; Means for adjusting the stroke of the cutting member
    • B26D7/2628—Means for adjusting the position of the cutting member
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW093107673A 2003-04-04 2004-03-22 Non-volatile semiconductor memory device, and semiconductor memory IC device TW200506937A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003101124 2003-04-04
JP2004046699A JP4426868B2 (ja) 2003-04-04 2004-02-23 不揮発性半導体記憶装置および半導体集積回路装置

Publications (2)

Publication Number Publication Date
TW200506937A true TW200506937A (en) 2005-02-16
TWI352994B TWI352994B (zh) 2011-11-21

Family

ID=33100413

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093107673A TW200506937A (en) 2003-04-04 2004-03-22 Non-volatile semiconductor memory device, and semiconductor memory IC device

Country Status (4)

Country Link
US (2) US7085157B2 (zh)
JP (1) JP4426868B2 (zh)
KR (1) KR20040086827A (zh)
TW (1) TW200506937A (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW546840B (en) 2001-07-27 2003-08-11 Hitachi Ltd Non-volatile semiconductor memory device
JP4346482B2 (ja) * 2004-03-25 2009-10-21 Ｎｅｃエレクトロニクス株式会社 不揮発性記憶装置及び不揮発性記憶装置の検証方法
JP2006222367A (ja) * 2005-02-14 2006-08-24 Oki Electric Ind Co Ltd 不揮発性半導体メモリ装置、駆動方法、及び製造方法
US7236402B2 (en) * 2005-11-30 2007-06-26 Freescale Semiconductor, Inc. Method and apparatus for programming/erasing a non-volatile memory
US7512032B2 (en) * 2006-03-28 2009-03-31 Andrea Martinelli Electronic device comprising non volatile memory cells with optimized programming and corresponding programming method
US7580291B2 (en) * 2006-06-08 2009-08-25 Atmel Corporation Data register with efficient erase, program verify, and direct bit-line memory access features
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7376027B1 (en) * 2006-11-07 2008-05-20 Taiwan Semiconductor Manufacturing Co., Ltd. DRAM concurrent writing and sensing scheme
JP5164400B2 (ja) * 2007-03-12 2013-03-21 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2010079977A (ja) * 2008-09-25 2010-04-08 Toppan Printing Co Ltd 定電流型電源回路を有する不揮発性半導体メモリ装置
CN102394109B (zh) * 2011-09-28 2016-08-03 上海华虹宏力半导体制造有限公司 闪存
US9093161B2 (en) * 2013-03-14 2015-07-28 Sillicon Storage Technology, Inc. Dynamic programming of advanced nanometer flash memory
US11069411B2 (en) 2013-03-14 2021-07-20 Silicon Storage Technology, Inc. Programming circuit and method for flash memory array
KR102167609B1 (ko) 2014-05-13 2020-10-20 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
US9881683B1 (en) * 2016-12-13 2018-01-30 Cypress Semiconductor Corporation Suppression of program disturb with bit line and select gate voltage regulation
KR20210011209A (ko) 2019-07-22 2021-02-01 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
US11200952B2 (en) 2019-07-22 2021-12-14 Samsung Electronics Co., Ltd. Non-volatile memory device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083689A (ja) * 1996-09-10 1998-03-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5852578A (en) * 1997-06-17 1998-12-22 Hoang; Loc B. Flash cell having self-timed programming
JPH11273388A (ja) * 1998-03-26 1999-10-08 Sanyo Electric Co Ltd 不揮発性半導体メモリ装置
KR100347866B1 (ko) * 1999-03-08 2002-08-09 삼성전자 주식회사 낸드 플래시 메모리 장치
US6388293B1 (en) * 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array
JP2001148434A (ja) 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
JP4043703B2 (ja) * 2000-09-04 2008-02-06 株式会社ルネサステクノロジ 半導体装置、マイクロコンピュータ、及びフラッシュメモリ
JP4084922B2 (ja) 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
US6480419B2 (en) * 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
JP2002334588A (ja) * 2001-05-11 2002-11-22 Seiko Epson Corp 不揮発性半導体記憶装置のプログラム方法
FR2826496A1 (fr) * 2001-06-25 2002-12-27 St Microelectronics Sa Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces
KR100457159B1 (ko) 2001-12-26 2004-11-16 주식회사 하이닉스반도체 마그네틱 램
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors

Also Published As

Publication number Publication date
JP2004319065A (ja) 2004-11-11
KR20040086827A (ko) 2004-10-12
US7085157B2 (en) 2006-08-01
US7529126B2 (en) 2009-05-05
TWI352994B (zh) 2011-11-21
JP4426868B2 (ja) 2010-03-03
US20060239072A1 (en) 2006-10-26
US20040196695A1 (en) 2004-10-07

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