SG10201603903QA - Wafer producing method - Google Patents
Wafer producing methodInfo
- Publication number
- SG10201603903QA SG10201603903QA SG10201603903QA SG10201603903QA SG10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA SG 10201603903Q A SG10201603903Q A SG 10201603903QA
- Authority
- SG
- Singapore
- Prior art keywords
- producing method
- wafer producing
- wafer
- producing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015112317A JP6482389B2 (en) | 2015-06-02 | 2015-06-02 | Wafer generation method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201603903QA true SG10201603903QA (en) | 2017-01-27 |
Family
ID=57352617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201603903QA SG10201603903QA (en) | 2015-06-02 | 2016-05-16 | Wafer producing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US9815138B2 (en) |
JP (1) | JP6482389B2 (en) |
KR (1) | KR102439404B1 (en) |
CN (1) | CN106216858B (en) |
DE (1) | DE102016209555A1 (en) |
MY (1) | MY181116A (en) |
SG (1) | SG10201603903QA (en) |
TW (1) | TWI683736B (en) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6358941B2 (en) | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP6399914B2 (en) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | Wafer generation method |
JP6358940B2 (en) * | 2014-12-04 | 2018-07-18 | 株式会社ディスコ | Wafer generation method |
JP6399913B2 (en) * | 2014-12-04 | 2018-10-03 | 株式会社ディスコ | Wafer generation method |
JP6391471B2 (en) | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | Wafer generation method |
JP6395632B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6395633B2 (en) | 2015-02-09 | 2018-09-26 | 株式会社ディスコ | Wafer generation method |
JP6494382B2 (en) | 2015-04-06 | 2019-04-03 | 株式会社ディスコ | Wafer generation method |
JP6425606B2 (en) | 2015-04-06 | 2018-11-21 | 株式会社ディスコ | Wafer production method |
JP6429715B2 (en) | 2015-04-06 | 2018-11-28 | 株式会社ディスコ | Wafer generation method |
JP6456228B2 (en) * | 2015-04-15 | 2019-01-23 | 株式会社ディスコ | Thin plate separation method |
JP6472333B2 (en) | 2015-06-02 | 2019-02-20 | 株式会社ディスコ | Wafer generation method |
JP6478821B2 (en) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | Wafer generation method |
JP6482423B2 (en) | 2015-07-16 | 2019-03-13 | 株式会社ディスコ | Wafer generation method |
JP6482425B2 (en) | 2015-07-21 | 2019-03-13 | 株式会社ディスコ | Thinning method of wafer |
JP6472347B2 (en) | 2015-07-21 | 2019-02-20 | 株式会社ディスコ | Thinning method of wafer |
JP6690983B2 (en) | 2016-04-11 | 2020-04-28 | 株式会社ディスコ | Wafer generation method and actual second orientation flat detection method |
JP2018093046A (en) * | 2016-12-02 | 2018-06-14 | 株式会社ディスコ | Wafer production method |
JP6858587B2 (en) | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | Wafer generation method |
JP6795811B2 (en) * | 2017-02-16 | 2020-12-02 | 国立大学法人埼玉大学 | Peeling substrate manufacturing method |
CN110691671B (en) | 2017-04-20 | 2023-10-10 | 西尔特克特拉有限责任公司 | Method for producing wafers with defined oriented modification lines |
CN111095493B (en) * | 2017-09-04 | 2024-04-02 | 琳得科株式会社 | Method and apparatus for manufacturing thin plate-like member |
JP6896344B2 (en) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | Chip manufacturing method |
JP7121941B2 (en) * | 2018-03-09 | 2022-08-19 | 国立大学法人埼玉大学 | Substrate manufacturing method |
JP7073172B2 (en) * | 2018-04-03 | 2022-05-23 | 株式会社ディスコ | How to generate a wafer |
US10388526B1 (en) | 2018-04-20 | 2019-08-20 | Semiconductor Components Industries, Llc | Semiconductor wafer thinning systems and related methods |
US10896815B2 (en) | 2018-05-22 | 2021-01-19 | Semiconductor Components Industries, Llc | Semiconductor substrate singulation systems and related methods |
US11121035B2 (en) | 2018-05-22 | 2021-09-14 | Semiconductor Components Industries, Llc | Semiconductor substrate processing methods |
US20190363018A1 (en) | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
US10468304B1 (en) | 2018-05-31 | 2019-11-05 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US11830771B2 (en) | 2018-05-31 | 2023-11-28 | Semiconductor Components Industries, Llc | Semiconductor substrate production systems and related methods |
US10940611B2 (en) | 2018-07-26 | 2021-03-09 | Halo Industries, Inc. | Incident radiation induced subsurface damage for controlled crack propagation in material cleavage |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
JP7330771B2 (en) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | Wafer production method and wafer production apparatus |
TW202116468A (en) * | 2019-07-18 | 2021-05-01 | 日商東京威力科創股份有限公司 | Processing device and processing method |
JP7427189B2 (en) * | 2020-01-31 | 2024-02-05 | 国立大学法人東海国立大学機構 | Laser processing method, semiconductor member manufacturing method, and laser processing device |
JP7405365B2 (en) * | 2020-01-31 | 2023-12-26 | 国立大学法人東海国立大学機構 | Laser processing method, semiconductor member manufacturing method, and laser processing device |
CN111940420B (en) * | 2020-07-17 | 2022-08-09 | 中科光绘(上海)科技有限公司 | Window progressive laser cleaning method |
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JP2000094221A (en) * | 1998-09-24 | 2000-04-04 | Toyo Advanced Technologies Co Ltd | Electric discharge wire saw |
TWI261358B (en) * | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
GB2402230B (en) * | 2003-05-30 | 2006-05-03 | Xsil Technology Ltd | Focusing an optical beam to two foci |
JP3998639B2 (en) * | 2004-01-13 | 2007-10-31 | 株式会社東芝 | Manufacturing method of semiconductor light emitting device |
US20050217560A1 (en) * | 2004-03-31 | 2005-10-06 | Tolchinsky Peter G | Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same |
KR20100070159A (en) * | 2008-12-17 | 2010-06-25 | 삼성전자주식회사 | Th1e fabricating meth1od of wafer |
JP5446325B2 (en) * | 2009-03-03 | 2014-03-19 | 豊田合成株式会社 | Laser processing method and compound semiconductor light emitting device manufacturing method |
EP2422374A4 (en) * | 2009-04-21 | 2016-09-14 | Tetrasun Inc | Method for forming structures in a solar cell |
CN102473851A (en) * | 2009-07-07 | 2012-05-23 | 皇家飞利浦电子股份有限公司 | Patterning device for generating a pattern in and/or on a layer |
JP5537081B2 (en) * | 2009-07-28 | 2014-07-02 | 浜松ホトニクス株式会社 | Processing object cutting method |
WO2012108055A1 (en) * | 2011-02-10 | 2012-08-16 | 信越ポリマー株式会社 | Monocrystalline substrate production method and monocrystalline member with modified layer formed therein |
JP5917862B2 (en) * | 2011-08-30 | 2016-05-18 | 浜松ホトニクス株式会社 | Processing object cutting method |
JP5940906B2 (en) * | 2012-06-19 | 2016-06-29 | 株式会社ディスコ | Laser processing equipment |
JP2014041925A (en) * | 2012-08-22 | 2014-03-06 | Hamamatsu Photonics Kk | Method for cutting workpiece |
US9768343B2 (en) * | 2013-04-29 | 2017-09-19 | OB Realty, LLC. | Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate |
CN103495805A (en) * | 2013-09-27 | 2014-01-08 | 苏州德龙激光股份有限公司 | Laser point printing device |
JP2016015463A (en) * | 2014-06-10 | 2016-01-28 | エルシード株式会社 | METHOD FOR PROCESSING SiC MATERIAL AND SiC MATERIAL |
JP6390898B2 (en) * | 2014-08-22 | 2018-09-19 | アイシン精機株式会社 | Substrate manufacturing method, workpiece cutting method, and laser processing apparatus |
JP6486240B2 (en) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | Wafer processing method |
JP6486239B2 (en) * | 2015-08-18 | 2019-03-20 | 株式会社ディスコ | Wafer processing method |
-
2015
- 2015-06-02 JP JP2015112317A patent/JP6482389B2/en active Active
-
2016
- 2016-05-02 TW TW105113658A patent/TWI683736B/en active
- 2016-05-16 MY MYPI2016701750A patent/MY181116A/en unknown
- 2016-05-16 SG SG10201603903QA patent/SG10201603903QA/en unknown
- 2016-05-25 KR KR1020160063918A patent/KR102439404B1/en active IP Right Grant
- 2016-05-26 US US15/165,686 patent/US9815138B2/en active Active
- 2016-05-31 CN CN201610373778.6A patent/CN106216858B/en active Active
- 2016-06-01 DE DE102016209555.2A patent/DE102016209555A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN106216858B (en) | 2020-02-21 |
KR102439404B1 (en) | 2022-09-01 |
MY181116A (en) | 2020-12-18 |
JP2016225536A (en) | 2016-12-28 |
KR20160142232A (en) | 2016-12-12 |
DE102016209555A1 (en) | 2016-12-08 |
TW201700250A (en) | 2017-01-01 |
CN106216858A (en) | 2016-12-14 |
JP6482389B2 (en) | 2019-03-13 |
TWI683736B (en) | 2020-02-01 |
US9815138B2 (en) | 2017-11-14 |
US20160354863A1 (en) | 2016-12-08 |
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