CN114250501A

CN114250501A - Equipment and method capable of continuously carrying out electroplating and chemical plating

Info

Publication number: CN114250501A
Application number: CN202111605262.7A
Authority: CN
Inventors: 史蒂文·贺·汪
Original assignee: Xinyang Guimi Shanghai Semiconductor Technology Co ltd
Current assignee: Xinyang Guimi Shanghai Semiconductor Technology Co ltd
Priority date: 2021-12-24
Filing date: 2021-12-24
Publication date: 2022-03-29

Abstract

The invention provides equipment and a method capable of continuously carrying out electroplating and chemical plating, wherein the equipment capable of continuously carrying out electroplating and chemical plating comprises a moving mechanism, a wafer clamp and a plurality of working grooves, wherein the wafer clamp is used for clamping a wafer, and the moving mechanism is connected with the wafer clamp; the working tank comprises a plating tank, the plating tank comprises a plating tank and a chemical plating tank, and the plating tank shares one wafer clamp. In the invention, the plating tanks share one wafer clamp, thereby effectively reducing the requirement of equipment on the number of the wafer clamps and greatly reducing the equipment cost; in addition, the risks of wafer damage, oxidation, warping and the like caused by frequent replacement of the wafer clamp are avoided, and the process quality is greatly improved; in addition, the plating tank simultaneously comprises a plating tank and a chemical plating tank, and the plating process and the chemical plating process are carried out in the same equipment, so that the structure of the plating equipment is more compact, the production efficiency is higher, and the production cost is lower.

Description

Equipment and method capable of continuously carrying out electroplating and chemical plating

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to equipment and a method capable of continuously carrying out electroplating and chemical plating.

Background

Semiconductor integrated circuits and other semiconductor devices are typically manufactured by electroplating or electroless plating processes to form various metal layers, including copper, nickel, tin, gold, silver, etc., on the wafer surface.

In electroplating, a wafer is usually placed in an electroplating solution, a negative voltage is applied to the wafer, a positive voltage is applied to an anode, and metal ions in the electroplating solution are deposited on the surface of the wafer through the action of an electric field. Electroless plating, also known as electroless plating, is a plating method in which metal ions in a plating solution are reduced to metal by means of a suitable reducing agent in the absence of an applied current and deposited on the wafer surface.

In the existing electroplating process and chemical plating process, each plating metal at least corresponds to one groove body and one wafer clamp for clamping wafers, and the layout has the following defects:

firstly, each plating tank is required to be correspondingly provided with a wafer clamp, and a large number of manipulators are usually required to be installed to drive different wafer clamps, which causes waste of space and increase of cost;

secondly, in the plating process, the wafer clamps need to be frequently switched, so that the risk of wafer damage is increased, the risk of wafer surface oxidation is increased, and the electrical performance of the wafer is easily reduced;

thirdly, for the wafer, the clamping positions of different wafer clamps have positive and negative tolerances, and when multiple films are manufactured, the wafer clamps are frequently replaced, which may cause uneven film stress and warpage of the wafer;

fourthly, the electroplating process and the chemical plating process are carried out in different devices, which not only causes the problems as described above due to the need of switching the wafer clamp, but also causes the problems of low production efficiency, large occupied space of the device, increased production cost and the like.

How to avoid many risks such as damage, oxidation, warpage and the like of wafers under the condition of ensuring the production efficiency and controlling the cost becomes a technical problem to be solved urgently in the field.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide equipment capable of continuously carrying out electroplating and chemical plating, and correspondingly provides a method capable of continuously carrying out electroplating and chemical plating, wherein different plating tanks (including an electroplating tank and a chemical plating tank) share one wafer clamp, so that the defects of low production efficiency, high cost, high wafer damage risk, easy oxidation of the surface, easy warping and the like in the prior art are solved.

In order to achieve the above purpose of the invention, the invention adopts the following technical scheme:

the equipment capable of continuously carrying out electroplating and chemical plating comprises a moving mechanism, a wafer clamp and a plurality of working grooves, wherein the wafer clamp is used for clamping a wafer, the moving mechanism is connected with the wafer clamp, and the moving mechanism can drive the wafer clamp to move; the working tank comprises a plating tank, the plating tank comprises a plating tank and a chemical plating tank, and the plating tank shares one wafer clamp.

In the technical scheme, the plating tanks share one wafer clamp, so that the requirement of equipment on the number of the wafer clamps is effectively reduced, the equipment cost is greatly reduced, and the continuity of the process is improved; in addition, the risks of wafer damage, oxidation, warping and the like caused by frequent replacement of the wafer clamp are avoided, and the process quality is greatly improved; in addition, the plating tank simultaneously comprises a plating tank and a chemical plating tank, and the plating process and the chemical plating process are carried out in the same equipment, so that the structure of the plating equipment is more compact, the production efficiency is higher, and the production cost is lower.

It should be noted that the term "plurality" in the present application means two or more, such as the plurality of working tanks in the present embodiment, and means that the number of the working tanks is two or more, such as a plurality of working tanks can be one plating tank plus one chemical plating tank.

Preferably, the number of the wafer clamps is one.

In the technical scheme, the number of the wafer clamps is one, which means that all the working grooves in the equipment share one wafer clamp, so that the requirement of the equipment on the number of the wafer clamps is reduced to the minimum, the whole structure of the equipment is simpler and more compact, and the cost and the risk are further reduced.

Preferably, the wafer clamp further comprises a power supply, when the number of the electroplating baths is multiple, a negative electrode of the power supply is electrically connected with the wafer clamp, a positive electrode of the power supply is electrically connected with each electroplating bath, and the number of the power supplies is less than that of the electroplating baths.

In the technical scheme, the number of the power supplies is less than that of the electroplating baths, which means that the anode of at least one power supply needs to be electrically connected with a plurality of electroplating baths respectively, so that the requirement of equipment on the number of the power supplies is effectively reduced, and the equipment cost is reduced.

Preferably, the number of the power sources is one set.

In the technical scheme, the number of the power supplies is one, which means that when the number of the electroplating baths is multiple, all the electroplating baths in the equipment share one power supply, so that the requirement of the equipment on the number of the power supplies is reduced to the minimum, the whole structure of the equipment is simpler and more compact, and the cost is further reduced.

Preferably, the working tank further comprises a plurality of cleaning tanks, and the plating tanks and the cleaning tanks are arranged in a one-to-one staggered manner.

In the technical scheme, the plating tanks and the cleaning tanks are arranged in a staggered mode, the wafers are transferred to enter the cleaning tanks after primary electroplating or chemical plating is finished, the wafers can immediately enter the next plating tank after cleaning is finished to perform subsequent technological processes, and the wafers do not need to be discharged, so that the efficiency is further improved.

Preferably, the chemical plating bath includes a seed layer repairing chemical plating bath, and the seed layer repairing chemical plating bath is used for performing a pre-chemical plating process on the wafer to repair the wafer seed layer.

According to the technical scheme, the seed layer repairing plating tank is arranged, the wafer seed layer is repaired by using a chemical plating process, the chemical plating has good uniform plating capacity, as long as the surface of a plated part is in contact with the plating solution, and the components consumed in the plating solution can be timely supplemented, the plating thickness of any part of the plated part is basically the same, even if the groove, the gap and the blind hole are the same, after the seed layer is repaired by using the chemical plating process, the subsequent plating process is carried out, and the metal layer with uniform plating, good filling effect and good bonding force can be obtained. And the seed layer repairing plating tank and other plating tanks share one wafer clamp, which means that after the wafer finishes the pre-plating process, the wafer can immediately enter the subsequent plating tank to carry out the corresponding metal plating process, thereby greatly improving the process efficiency.

A method for continuously carrying out electroplating and chemical plating, which adopts the equipment for continuously carrying out electroplating and chemical plating, and comprises the following steps:

s10, clamping the wafer by using the wafer clamp;

s20, the wafer clamp enters a first plating tank under the driving of the moving mechanism so as to carry out a first round of plating process on the wafer;

s30, after the previous plating process is completed, cleaning the wafer, and then driving the wafer clamp to enter the next plating tank under the driving of the moving mechanism so as to perform the next plating process on the wafer;

and S40, repeating the step S30 until the wafer finishes all the plating processes.

In the technical scheme, the wafer clamp is driven by the moving mechanism to be transferred between each electroplating bath and the chemical plating bath, so that continuous electroplating and chemical plating can be realized, the production efficiency is greatly improved, risks such as oxidation of wafer fragments and surfaces are reduced, and the high-efficiency electroplating device has very high economic benefit.

Preferably, between the step S10 and the step S20, a step S11 is further included in which the wafer chuck enters the seed layer repairing plating tank under the driving of the moving mechanism, so as to repair the wafer seed layer by using the chemical plating process.

In the technical scheme, before the wafer is subjected to the electroplating process and the chemical plating process, the wafer can firstly enter the seed layer repairing chemical plating tank to repair the seed layer of the wafer by using the chemical plating process, and then the subsequent plating process is carried out, so that the metal layer with uniform plating and good filling effect and bonding force can be obtained. And after the seed layer is repaired, the wafer is driven by the moving mechanism to enter a subsequent plating tank without being discharged, so that the working efficiency is greatly improved.

Preferably, in step S11, the chemical plating is performed by using a copper sulfate plating solution with a PH of 2-20 g/L, and the PH of the copper sulfate plating solution is 12-13.

In the technical scheme, the chemical plating adopts a copper sulfate chemical plating solution with the pH value of 12-13 and the concentration of 2-20 g/L, the chemical plating solution has good stability and plating layer performance, and a copper layer with the target thickness can be obtained.

Preferably, in step S11, the electroless plating temperature is between 21 and 60 ℃ and the deposition rate is between 0.5 and 5 um/h.

In the technical scheme, the temperature of chemical plating is set to be 21-60 ℃, the deposition rate is 0.5-5 um/h, and the high deposition speed can be achieved while the good process stability is ensured.

Compared with the prior art, the invention has the following beneficial effects:

1. according to the equipment capable of continuously carrying out electroplating and chemical plating, all plating tanks share one wafer clamp, so that the requirement of the equipment on the number of the wafer clamps is effectively reduced, and the equipment cost is greatly reduced; in addition, the risks of wafer damage, oxidation, warping and the like caused by frequent replacement of the wafer clamp are avoided, and the process quality is greatly improved; in addition, the plating tank simultaneously comprises a plating tank and a chemical plating tank, and the plating process and the chemical plating process are carried out in the same equipment, so that the structure of the plating equipment is more compact, the production efficiency is higher, and the production cost is lower.

2. According to the method for continuously electroplating and chemical plating, provided by the invention, the wafer clamp is driven by the moving mechanism to be transferred among each electroplating bath and the chemical plating bath, so that the continuous electroplating and chemical plating process can be realized, the production efficiency is greatly improved, the risks of wafer fragments, surface oxidation and the like are reduced due to the fact that the wafer clamp does not need to be replaced frequently, and the economic benefit is very high.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:

FIG. 1 is a schematic structural view of an apparatus for continuously performing electroplating and electroless plating according to a first embodiment;

FIG. 2 is a first schematic structural diagram of an apparatus capable of continuously performing electroplating and electroless plating according to another embodiment;

FIG. 3 is a schematic structural diagram II of an apparatus capable of continuously performing electroplating and electroless plating according to another embodiment;

FIG. 4 is a schematic circuit diagram of an apparatus for continuously performing electroplating and electroless plating according to a second embodiment;

FIG. 5 is a first schematic structural diagram of an apparatus for continuously performing electroplating and electroless plating according to a third embodiment;

FIG. 6 is a flow chart of a method for continuously performing electroplating and electroless plating according to a fourth embodiment.

The figures show that:

100-equipment capable of continuously electroplating and chemical plating

10-an electroplating bath;

11-copper plating bath;

12-nickel plating bath;

13-tin-silver plating bath;

20-melting a plating bath;

21-repairing a seed layer plating bath;

30-a cleaning tank;

60-a moving mechanism;

70-a wafer;

80-a wafer chuck;

90-power supply

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Further, all directional indicators in this application (such as up, down, left, right, front, back, bottom …) are only used to explain the relative positional relationship between the components, the motion, etc. at a particular attitude (as shown in the drawings), and if the particular attitude changes, the directional indicator changes accordingly. Further, the descriptions in this application referring to "first", "second", etc. are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated.

Example 1:

as shown in fig. 1, the present embodiment provides an apparatus 100 capable of continuously performing electroplating and electroless plating, which includes a moving mechanism 60, a wafer holder 80, and a plurality of work tanks. The wafer holder 80 is used for holding the wafer 70, and the moving mechanism 60 is connected to the wafer holder 80, and the moving mechanism 60 can transfer the wafer holder 80 between a plurality of working grooves.

Specifically, the working tank includes plating tanks and cleaning tanks 30, wherein the plating tanks include one plating tank 20 and two plating tanks 10, the number of the cleaning tanks 30 is three, the three cleaning tanks 30 and the three plating tanks are staggered one by one, and the cleaning tanks 30 are disposed at downstream side positions of the plating tanks corresponding thereto. The target metal material plated by each plating tank may be different. The so-called target metal material may include: any one of gold, silver, copper, tin, or tin-silver, and is not limited to these kinds.

In operation, the moving mechanism 60 first drives the wafer holder 80 into the first working tank, i.e. the chemical plating tank 20, to perform a chemical plating process, wherein the chemical plating tank 20 contains a chemical plating solution for pre-plating metal. During the electroless plating process, the metal ions in the electroless plating solution are reduced to metal and deposited on the surface of the wafer 70. After the electroless plating process is completed, the moving mechanism 60 drives the wafer holder 80 into the second working tank, i.e. the cleaning tank 30, to clean the wafer 70, thereby preventing the electroless plating solution from contaminating the subsequent electroplating solution.

After the cleaning process is completed, the moving mechanism 60 drives the wafer clamp 80 to enter a third working tank, i.e. the electroplating tank 10, so as to perform the electroplating process, wherein the electroplating tank 10 contains electroplating solution for pre-plating metal. In the plating process, the wafer holder 80 is electrically connected to the corresponding plating tank 10 as a cathode of the plating tank 10, so that cations of the pre-plating metal in the plating solution are attached to the surface of the wafer 70 to form a plating layer. After the plating process is completed, the plating cell 10 is electrically disconnected from the wafer chuck 80.

Specifically, when the wafer clamp 80 is driven by the moving mechanism 60 to enter the electroplating bath 10, the wafer clamp 80 is overlapped with a cathode electrode of the electroplating bath 10, and thus the wafer clamp 80 becomes a cathode of the electroplating bath 10; when the moving mechanism 60 drives the wafer clamp 80 to leave the electroplating tank 10, the wafer clamp 80 is separated from the cathode electrode of the electroplating tank 10 under the displacement driving of the moving mechanism 60, thereby avoiding the influence of the electrode on the subsequent process implementation of the wafer clamp 80.

After the electroplating process is completed, the moving mechanism 60 drives the wafer clamp 80 to enter the fourth working tank, i.e. the cleaning tank 30, so as to clean the wafer 70, thereby preventing the electroplating solution contained in the electroplating tank 10 from polluting the electroplating solution to be used subsequently. After the cleaning process is completed, the moving mechanism 60 continues to drive the wafer clamp 80 into the fifth working tank, which is still the electroplating bath 10, and at this time, the wafer clamp 80 is overlapped with the cathode electrode in the electroplating bath 10 to serve as the cathode of the electroplating bath 10. Since the electrode arrangement of the electroplating cell 10 is within the scope of the prior art, it is not described in detail herein.

After the electroplating process is completed, the moving mechanism 60 drives the wafer clamp 80 to move, the wafer clamp 80 is electrically disconnected from the electroplating bath 10, and the wafer clamp 80 enters the cleaning tank 30 to perform the cleaning process under the driving of the moving mechanism 60.

According to the equipment 100 capable of continuously performing electroplating and chemical plating, the wafer clamp 80 is driven by the moving mechanism 60 to be transferred among the plurality of working tanks, so that the requirement of the equipment on the number of the wafer clamps 80 is effectively reduced, and the equipment cost is greatly reduced; in addition, a plurality of working tanks (including the electroplating tank 10, the chemical plating tank 20 and the cleaning tank 30) share one wafer clamp 80, so that the risks of damage, oxidation, warping and the like of the wafer 70 caused by frequent replacement of the wafer clamp 80 are avoided, and the process quality is greatly improved; in addition, the plating tank simultaneously comprises a plating tank 10 and a chemical plating tank 20, and the plating process and the chemical plating process are carried out in the same equipment, so that the metal plating equipment provided by the embodiment has the advantages of more compact structure, higher production efficiency and lower production cost.

It should be noted that, in the present embodiment, the plurality of working grooves are arranged in a horizontal direction, and the moving mechanism 60 drives the wafer holder 80 to enter each working groove in sequence by moving horizontally; in other embodiments, however, the user may select other arrangements of work slots.

For example, as shown in fig. 2, the user may arrange the work grooves in a circular shape by using the fixed end of the moving mechanism 60 as a center, and in this structure, the moving mechanism 60 rotates around the fixed end to move the wafer chuck 80 among the work grooves.

Alternatively, as shown in fig. 3, the user may arrange a plurality of work grooves along two horizontal lines, and the moving mechanism 60 may move the wafer chuck 80 horizontally to sequentially enter each of the work grooves disposed on one of the horizontal lines, and then turn the wafer chuck 80 horizontally to sequentially enter each of the work grooves disposed on the other horizontal line.

Of course, the above-mentioned structure is only exemplary, and the number and position of the working tanks are also only exemplary, and in other embodiments, the user can reasonably arrange the number of plating tanks, the number of plating tanks 10 and chemical plating tanks 20 in the plating tank, the number of cleaning tanks 30, and the arrangement positions of the plating tanks and cleaning tanks 30 according to the actual process requirements.

Example 2

The present embodiment has substantially the same structure as the apparatus 100 capable of continuously performing electroplating and chemical plating provided in embodiment 1, except that, as shown in fig. 4, the apparatus 100 capable of continuously performing electroplating and chemical plating provided in the present embodiment includes a wafer chuck 80, a moving mechanism 60, a plurality of working tanks, and a set of power supply 90. The working tank comprises three plating tanks, namely a chemical plating tank 20 and two plating tanks 10. Wherein, the negative pole of the power supply 90 is electrically connected to the wafer clamp 80, the positive pole of the power supply 90 is electrically connected to the anode components in the two electroplating baths 10, respectively, the moving mechanism 60 is connected to the wafer clamp 80, and the moving mechanism 60 can transfer the wafer clamp 80 between the working baths.

For two of the electroplating baths 10, as shown in fig. 4, when the moving mechanism 60 moves the wafer holder 80 into one of the electroplating baths 10, the power source 90 starts to supply power to connect the wafer 70 on the wafer holder 80 with the anode assembly in the electroplating bath 10, so as to perform the electroplating process. Thereafter, when the wafer chuck 80 is moved into another electroplating tank 10 by the moving mechanism 60, the wafer 70 on the wafer chuck 80 is also conducted to the anode assembly of another electroplating tank 10 after the power supply 90 starts to supply power.

The apparatus 100 capable of continuously performing electroplating and electroless plating provided in this embodiment has the following advantages in addition to the advantages described in embodiment 1: in the embodiment, the positive electrodes of the power supplies 90 are electrically connected to the plurality of electroplating baths 10, and the wafer clamps 80 electrically connected to the negative electrodes of the power supplies 90 are moved between the electroplating baths 10 by the moving mechanism 60, so that the purpose of performing various processes on the wafers 70 fixed on the wafer clamps 80 in the plurality of electroplating baths 10 by supplying power to the single power supply 90 can be met, the requirement of the equipment on the number of the power supplies 90 is effectively reduced, and the equipment cost is reduced.

Example 3

The structure of the present embodiment is substantially the same as that of the apparatus 100 provided in embodiment 1, except that the present embodiment is particularly directed to a wafer 70 with a defective seed layer, and in the present embodiment, before the wafer is formally subjected to the electroplating or chemical plating process, the wafer 70 with a defective seed layer is repaired, so as to ensure the quality of the subsequent metal plating.

In view of good plating uniformity of chemical plating, for the wafer 70 with a defective seed layer, the present embodiment sets a seed layer repairing chemical plating bath 21 to repair the seed layer of the wafer 70, and then performs a subsequent plating process on the wafer 70, where the subsequent plating process may be an electroplating process, or a combination of an electroplating process and a chemical plating process.

Specifically, the method is specifically described by taking the example of repairing a copper seed layer and electroplating Cu/Ni/SnAg. As shown in fig. 5, the seed layer repair plating tank 21 is disposed at a first position, the seed layer repair plating tank 21 is a copper plating tank, the copper plating tank 11 is disposed at a second position, the nickel plating tank 12 is disposed at a third position, and the tin-silver plating tank 13 is disposed at a fourth position.

In the operation process, firstly, the moving mechanism 60 drives the wafer clamp 80 to enter the seed layer repairing plating tank 21 to implement the copper plating process, copper sulfate plating solution is contained in the seed layer repairing plating tank 21, and during the copper plating process, copper ions in the copper sulfate plating solution are reduced into copper and deposited on the surface of the wafer 70. Wherein, the concentration of the copper sulfate plating solution can be between 2 and 20g/L, the PH value can be between 12 and 13, the temperature of chemical plating can be between 21 and 60 ℃, the deposition rate can be between 0.5 and 5um/h, and the setting of the parameters can achieve higher deposition speed while ensuring good process stability.

After the electroless copper plating layer with the target thickness is deposited on the surface of the seed layer of the wafer 70, the wafer 70 is cleaned to prevent the electroless copper plating solution from polluting the subsequent electroplating solution used by the equipment. After the cleaning process is completed, the moving mechanism 60 drives the wafer clamp 80 to enter the copper electroplating bath 11 to perform an electroplating process, so as to perform hole filling electroplating on the wafer 70. Specifically, the copper plating bath 11 contains a plating solution and is provided with a copper anode assembly. In the copper electroplating process, the power supply supplies power, the wafer holder 80 is conducted with the copper anode assembly in the copper electroplating tank 11, and copper ions in the electroplating solution are attached to the surface of the wafer 70 to form a copper plating layer. After the electro-coppering process is completed, the wafer chuck 80 is disconnected from the electrical connection to the copper anode assembly and the wafer 70 is then cleaned.

After the cleaning process is completed, the moving mechanism 60 drives the wafer clamp 80 to enter the nickel electroplating bath 12 to perform the nickel electroplating process, and the nickel electroplating bath 12 contains electroplating solution and is provided with a nickel anode assembly. In the nickel plating process, the wafer holder 80 is electrically connected to the nickel anode assembly in the nickel plating bath 12 to serve as a cathode of the anode assembly, so that nickel ions in the plating solution are attached to the surface of the wafer 70 to form a nickel plating layer. After the nickel electroplating process is completed, the wafer chuck 80 is electrically disconnected from the nickel anode assembly, and the wafer 70 is then cleaned.

After the cleaning process is completed, the moving mechanism 60 drives the wafer clamp 80 to enter the tin-silver electroplating bath 13 to perform the tin-silver electroplating process, and the specific process flow is similar to nickel and copper electroplating, which is not described herein again.

The apparatus 100 capable of continuously performing electroplating and electroless plating provided in this embodiment has the following advantages in addition to the advantages of embodiment 1: by arranging the seed layer repairing chemical plating tank 21 and repairing the wafer seed layer by using a chemical plating process, the chemical plating has good uniform plating capacity, as long as the surface of a plated part is in contact with the plating solution, and the components consumed in the plating solution can be timely supplemented, the plating thickness of any part of the plated part is basically the same, even if the groove, the gap and the blind hole are the same, after the seed layer is repaired by using the chemical plating process, the subsequent metal plating process is carried out, and the metal layer with uniform plating, good filling effect and good bonding force can be obtained. In addition, the seed layer repairing plating bath 21 and other plating baths share one wafer clamp, and the wafer 70 can enter the next plating bath in the shortest time after the seed layer is repaired, so that the working efficiency is greatly improved.

Example 4

The embodiment provides a method for continuously performing electroplating and electroless plating, as shown in fig. 6, comprising the following steps:

s10, clamping the wafer 70 by using the wafer clamp 80;

s20, the wafer clamp 80 enters a first plating tank under the driving of the moving mechanism 60 to carry out a first round of plating process on the wafer 70;

s30, after the previous plating process is completed, cleaning the wafer 70, and then driving the wafer clamp 80 to enter the next plating tank under the driving of the moving mechanism 60 to perform the next plating process on the wafer;

s40, repeat step S30 until the wafer 70 completes all plating processes.

Further, between step S10 and step S20, the following steps may be further included: in step S11, the wafer clamp 80 is driven by the moving mechanism 60 to enter the seed layer repairing plating tank 21, so as to perform a seed layer repairing process on the wafer 70. This step is an optional step, and is specifically designed for wafers with defective seed layers. For the wafer 70 with the defect seed layer, the wafer needs to be repaired before the electroplating or chemical plating process is formally performed, in view of good plating uniformity, the seed layer repairing plating tank 21 can be used to perform a chemical plating process on the wafer 70 to repair the seed layer, and then a subsequent plating process is performed on the wafer 70, wherein the subsequent plating process can be an electroplating process or a combination of the electroplating process and the chemical plating process. In addition, if the wafer 70 has defects such as oil stain and oxidation due to long storage time, before step S11, a pretreatment process including an alkaline treatment, an acidic treatment, a surface activation treatment, and a cleaning treatment may be performed on the wafer.

In the method for continuously performing electroplating and chemical plating provided by this embodiment, the moving mechanism 60 drives the wafer clamp 80 to transfer between each electroplating bath 10 and the chemical plating bath 20, so that continuous electroplating and chemical plating of the wafer 70 can be realized, the production efficiency is greatly improved, the risks of oxidation and the like on fragments and surfaces of the wafer 70 are reduced, and the method has very high economic benefits.

While the embodiments of the present invention have been described, it is clear that various changes and modifications can be made by workers in the field without departing from the technical spirit of the present invention.

Claims

1. The equipment capable of continuously carrying out electroplating and chemical plating is characterized by comprising a moving mechanism, a wafer clamp and a plurality of working grooves, wherein the wafer clamp is used for clamping a wafer, the moving mechanism is connected with the wafer clamp, and the moving mechanism can drive the wafer clamp to move; the working tank comprises a plating tank, the plating tank comprises a plating tank and a chemical plating tank, and the plating tank shares one wafer clamp.

2. The apparatus of claim 1, wherein the number of the wafer holders is one.

3. The apparatus according to claim 1, further comprising a power supply, wherein when the number of the plating tanks is plural, a negative electrode of the power supply is electrically connected to the wafer chuck, and a positive electrode of the power supply is electrically connected to each of the plating tanks, and the number of the power supply is smaller than the number of the plating tanks.

4. The apparatus according to claim 3, wherein the number of the power sources is one set.

5. The apparatus according to claim 1, wherein the working tank further comprises a plurality of cleaning tanks, and the plating tanks and the cleaning tanks are staggered one by one.

6. The apparatus of claim 1, wherein the chemical plating bath comprises a seed layer repair bath for performing a pre-plating process on the wafer to repair the wafer seed layer.

7. A method for continuously performing electroplating and electroless plating, which is characterized in that the equipment for continuously performing electroplating and electroless plating according to any one of claims 1 to 6 is adopted, and comprises the following steps:

s10, clamping the wafer by using the wafer clamp;

8. The method as claimed in claim 7, wherein between the step S10 and the step S20, the method further comprises a step S11, wherein the wafer chuck is driven by the moving mechanism to enter the seed layer repairing and chemical plating bath to repair the wafer seed layer by an electroless plating process.

9. The method as claimed in claim 8, wherein in step S11, the chemical plating is performed by using a copper sulfate solution with a pH of 12-13 at a concentration of 2-20 g/L.

10. The method of claim 8, wherein the electroless plating temperature is between 21 ℃ and 60 ℃ and the deposition rate is between 0.5 um/h and 5 um/h.