SG106643A1 - Method and device for correcting pattern film on a semiconductor substrate - Google Patents

Method and device for correcting pattern film on a semiconductor substrate

Info

Publication number
SG106643A1
SG106643A1 SG200106476A SG200106476A SG106643A1 SG 106643 A1 SG106643 A1 SG 106643A1 SG 200106476 A SG200106476 A SG 200106476A SG 200106476 A SG200106476 A SG 200106476A SG 106643 A1 SG106643 A1 SG 106643A1
Authority
SG
Singapore
Prior art keywords
semiconductor substrate
pattern film
correcting pattern
correcting
film
Prior art date
Application number
SG200106476A
Other languages
English (en)
Inventor
Morishige Yukio
Oomiya Makoto
Original Assignee
Laserfront Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laserfront Technologies Inc filed Critical Laserfront Technologies Inc
Publication of SG106643A1 publication Critical patent/SG106643A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Toxicology (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG200106476A 2000-10-19 2001-10-19 Method and device for correcting pattern film on a semiconductor substrate SG106643A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000320107A JP3479838B2 (ja) 2000-10-19 2000-10-19 パターン修正方法及びパターン修正装置

Publications (1)

Publication Number Publication Date
SG106643A1 true SG106643A1 (en) 2004-10-29

Family

ID=18798445

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200106476A SG106643A1 (en) 2000-10-19 2001-10-19 Method and device for correcting pattern film on a semiconductor substrate

Country Status (6)

Country Link
US (2) US6890387B2 (ja)
JP (1) JP3479838B2 (ja)
KR (1) KR100444709B1 (ja)
DE (1) DE10151724B4 (ja)
SG (1) SG106643A1 (ja)
TW (1) TW573049B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3859543B2 (ja) * 2002-05-22 2006-12-20 レーザーフロントテクノロジーズ株式会社 レーザ加工装置
US7232715B2 (en) * 2002-11-15 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
US6683277B1 (en) * 2002-12-20 2004-01-27 Osram Opto Semiconductors Laser ablation nozzle assembly
JP4334308B2 (ja) * 2003-09-24 2009-09-30 オムロンレーザーフロント株式会社 配線修正装置
JP4282617B2 (ja) * 2005-02-16 2009-06-24 オムロンレーザーフロント株式会社 ガスウィンドウ及び化学気相成長装置
JP4754369B2 (ja) * 2006-02-28 2011-08-24 オムロンレーザーフロント株式会社 フォトマスクの欠陥修正方法及び欠陥修正装置
JP2007310310A (ja) * 2006-05-22 2007-11-29 Sony Corp 導電膜の形成方法、配線基板の製造方法、及び表示装置の製造方法
JP2010509709A (ja) 2006-10-24 2010-03-25 ビー・ナノ・リミテッド インターフェース、非真空環境内で物体を観察する方法、および走査型電子顕微鏡
JP5053030B2 (ja) * 2007-10-16 2012-10-17 大日本印刷株式会社 フォトマスクの欠陥修正方法、製造方法および欠陥修正装置
JP5373298B2 (ja) * 2008-03-04 2013-12-18 株式会社日立ハイテクサイエンス Ｅｕｖｌマスクの加工方法
US8981294B2 (en) 2008-07-03 2015-03-17 B-Nano Ltd. Scanning electron microscope, an interface and a method for observing an object within a non-vacuum environment
JP5206979B2 (ja) * 2009-03-13 2013-06-12 オムロン株式会社 レーザｃｖｄによる薄膜形成方法、及び同方法に好適なガスウィンドウ
JP5163967B2 (ja) * 2010-07-30 2013-03-13 オムロン株式会社 フォトマスク修正方法およびレーザ加工装置
WO2012117656A1 (ja) 2011-03-02 2012-09-07 パナソニック株式会社 有機ｅｌパネルおよびその製造方法
EP2959287A4 (en) 2013-02-20 2016-10-19 Nano Ltd B scanning Electron Microscope
CN104746041B (zh) * 2015-03-04 2018-02-13 深圳清溢光电股份有限公司 ***相沉积方式修补白缺陷的方法
KR101723923B1 (ko) * 2015-11-11 2017-04-11 참엔지니어링(주) 증착 장치
CN112764309A (zh) * 2021-02-07 2021-05-07 泉芯集成电路制造(济南)有限公司 一种光罩的缺陷去除方法及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124437A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Correction of pattern defect
JPS6244742A (ja) * 1985-08-23 1987-02-26 Hitachi Ltd 修正方法および装置
JPH07104459A (ja) * 1993-10-08 1995-04-21 Fujitsu Ltd フォトマスクの欠陥修正方法及び修正装置
JPH10324973A (ja) * 1997-05-23 1998-12-08 Nec Corp レーザｃｖｄ装置
JPH11186123A (ja) * 1997-12-19 1999-07-09 Samsung Electron Co Ltd ウエーハ上に形成された感光膜の現像方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922372B2 (ja) * 1979-02-21 1984-05-26 株式会社日立製作所 フォトマスク修正方法
JPS586127A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd フオトマスク欠陥修正方法とその装置
JPS59157505A (ja) * 1983-02-28 1984-09-06 Hitachi Ltd パタ−ン検査装置
JPS60196942A (ja) * 1984-03-21 1985-10-05 Hitachi Ltd フオトマスク欠陥修正方法
JPS61279690A (ja) * 1985-06-05 1986-12-10 Hitachi Ltd 表面処理装置
JPS6336249A (ja) * 1986-07-31 1988-02-16 Nec Corp ホトマスク修正方式
US4778693A (en) * 1986-10-17 1988-10-18 Quantronix Corporation Photolithographic mask repair system
US4816294A (en) * 1987-05-04 1989-03-28 Midwest Research Institute Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes
JP2835095B2 (ja) * 1989-09-18 1998-12-14 日本真空技術株式会社 レーザーｃｖｄ装置
JPH05259247A (ja) * 1992-03-10 1993-10-08 Nec Corp 固体撮像素子用プローバ
JPH0862827A (ja) 1994-08-19 1996-03-08 Fujitsu Ltd 位相シフトマスクおよびその修正方法
TW285721B (ja) * 1994-12-27 1996-09-11 Siemens Ag
US5707888A (en) * 1995-05-04 1998-01-13 Lsi Logic Corporation Oxide formed in semiconductor substrate by implantation of substrate with a noble gas prior to oxidation
JP2694264B2 (ja) 1995-10-30 1997-12-24 セイコーインスツルメンツ株式会社 集束イオンビーム装置
JP2785803B2 (ja) * 1996-05-01 1998-08-13 日本電気株式会社 フォトマスクの白点欠陥修正方法および装置
US6165649A (en) * 1997-01-21 2000-12-26 International Business Machines Corporation Methods for repair of photomasks
US6074571A (en) * 1997-09-30 2000-06-13 International Business Machines Corporation Cut and blast defect to avoid chrome roll over annealing
JP3758887B2 (ja) * 1999-03-31 2006-03-22 Ｎｔｎ株式会社 パターン修正装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124437A (en) * 1981-01-26 1982-08-03 Mitsubishi Electric Corp Correction of pattern defect
JPS6244742A (ja) * 1985-08-23 1987-02-26 Hitachi Ltd 修正方法および装置
JPH07104459A (ja) * 1993-10-08 1995-04-21 Fujitsu Ltd フォトマスクの欠陥修正方法及び修正装置
JPH10324973A (ja) * 1997-05-23 1998-12-08 Nec Corp レーザｃｖｄ装置
JPH11186123A (ja) * 1997-12-19 1999-07-09 Samsung Electron Co Ltd ウエーハ上に形成された感光膜の現像方法

Also Published As

Publication number Publication date
JP3479838B2 (ja) 2003-12-15
US20020047095A1 (en) 2002-04-25
DE10151724B4 (de) 2007-03-22
US6890387B2 (en) 2005-05-10
US20050178752A1 (en) 2005-08-18
JP2002131888A (ja) 2002-05-09
KR100444709B1 (ko) 2004-08-21
KR20020033438A (ko) 2002-05-06
DE10151724A1 (de) 2002-06-06
TW573049B (en) 2004-01-21

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