SG104973A1 - Electrically conductive paste and semiconductor device prepared by using the paste - Google Patents

Electrically conductive paste and semiconductor device prepared by using the paste

Info

Publication number
SG104973A1
SG104973A1 SG200203709A SG200203709A SG104973A1 SG 104973 A1 SG104973 A1 SG 104973A1 SG 200203709 A SG200203709 A SG 200203709A SG 200203709 A SG200203709 A SG 200203709A SG 104973 A1 SG104973 A1 SG 104973A1
Authority
SG
Singapore
Prior art keywords
paste
under
semiconductor device
electrically conductive
viscosities
Prior art date
Application number
SG200203709A
Other languages
English (en)
Inventor
Onami Kazuto
Takeda Toshiro
Fukuizumi Akira
Nakajima Yoshihiro
Original Assignee
Nec Electronics Corp
Sumitomo Bakelite Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Electronics Corp, Sumitomo Bakelite Co filed Critical Nec Electronics Corp
Publication of SG104973A1 publication Critical patent/SG104973A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Conductive Materials (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Wire Bonding (AREA)
  • Paints Or Removers (AREA)
SG200203709A 2001-06-28 2002-06-19 Electrically conductive paste and semiconductor device prepared by using the paste SG104973A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001197147A JP3854103B2 (ja) 2001-06-28 2001-06-28 導電性ペースト及び該ペーストを用いてなる半導体装置

Publications (1)

Publication Number Publication Date
SG104973A1 true SG104973A1 (en) 2004-07-30

Family

ID=19034803

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200203709A SG104973A1 (en) 2001-06-28 2002-06-19 Electrically conductive paste and semiconductor device prepared by using the paste

Country Status (6)

Country Link
US (1) US6733695B2 (ja)
JP (1) JP3854103B2 (ja)
CN (1) CN1201337C (ja)
DE (1) DE10228484B4 (ja)
SG (1) SG104973A1 (ja)
TW (1) TWI233620B (ja)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004139838A (ja) * 2002-10-17 2004-05-13 Noritake Co Ltd 導体ペーストおよびその利用
TWI325739B (en) * 2003-01-23 2010-06-01 Panasonic Corp Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method
JP2005002335A (ja) * 2003-05-21 2005-01-06 Japan Gore Tex Inc 接着フィルムおよびこれを使った半導体装置
JP4635423B2 (ja) * 2003-09-11 2011-02-23 住友ベークライト株式会社 半導体用樹脂ペースト及び半導体装置
JP2005240092A (ja) * 2004-02-26 2005-09-08 Dowa Mining Co Ltd 銀粉およびその製造方法
JP2005272627A (ja) * 2004-03-24 2005-10-06 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置
JP2005272709A (ja) * 2004-03-25 2005-10-06 Sumitomo Bakelite Co Ltd 樹脂組成物及び樹脂組成物を使用して作製した半導体装置
US20060086773A1 (en) * 2004-10-27 2006-04-27 Sanftleben Henry M Technique for optical inspection system verification
DE202005021556U1 (de) 2005-07-20 2008-08-28 Biolog Biotechnologie Und Logistik Gmbh Lösbarer elektrisch leitender Werkstoff auf der Basis funktionaler Saccharide und metallischer Partikel
WO2007042071A1 (de) * 2005-10-10 2007-04-19 Alphasem Ag Baugruppe mit wenigstens zwei in elektrisch leitender wirkverbindung stehenden komponenten und verfahren zum herstellen der baugruppe
JP5098175B2 (ja) * 2006-01-06 2012-12-12 住友ベークライト株式会社 樹脂組成物及び樹脂組成物を使用して作製した半導体装置
DE602006001393D1 (de) * 2006-03-06 2008-07-17 Umicore Ag & Co Kg Zusammensetzung zur Befestigung von Hochleistungshalbleiter
JP4974803B2 (ja) * 2007-08-03 2012-07-11 タツタ電線株式会社 プリント配線板用シールドフィルム及びプリント配線板
JP5027598B2 (ja) * 2007-09-10 2012-09-19 京セラケミカル株式会社 接着剤組成物およびそれを用いた半導体装置
JP5342453B2 (ja) * 2007-11-28 2013-11-13 パナソニック株式会社 導電性ペーストおよびこれを用いた電気電子機器
JP5257574B2 (ja) * 2007-12-10 2013-08-07 福田金属箔粉工業株式会社 無溶剤型導電性接着剤
JP2011524068A (ja) * 2008-05-28 2011-08-25 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光電池の導体に使用されるサブミクロン粒子を含む組成物
KR20110014676A (ko) * 2008-05-28 2011-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 광전지용 전도체: 서브미크론 입자를 함유하는 조성물
KR20100109416A (ko) * 2009-03-31 2010-10-08 디아이씨 가부시끼가이샤 도전성 페이스트 조성물 및 그 제조 방법
CN102576766A (zh) * 2009-10-15 2012-07-11 日立化成工业株式会社 导电性粘接剂、太阳能电池及其制造方法、以及太阳能电池模块
JP5321445B2 (ja) * 2009-12-28 2013-10-23 住友ベークライト株式会社 半導体装置の製造方法
JP5580701B2 (ja) * 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
EP2431438B1 (en) * 2010-09-20 2012-11-28 Henkel AG & Co. KGaA Electrically conductive adhesives
TW201227761A (en) 2010-12-28 2012-07-01 Du Pont Improved thick film resistive heater compositions comprising ag & ruo2, and methods of making same
JP6144048B2 (ja) * 2011-01-27 2017-06-07 日立化成株式会社 導電性接着剤組成物及びその塗布方法、接続体、並びに太陽電池モジュール及びその製造方法
WO2012126391A1 (en) * 2011-03-22 2012-09-27 Nano And Advanced Materials Institute Limited HIGH PERFORMANCE DIE ATTACH ADHESIVES (DAAs) NANOMATERIALS FOR HIGH BRIGHTNESS LED
TWI608062B (zh) * 2011-05-31 2017-12-11 住友電木股份有限公司 樹脂組成物、使用它之半導體裝置及半導體裝置之製造方法
MY157634A (en) * 2011-06-21 2016-07-15 Sumitomo Metal Mining Co Silver Dust and Manufacturing Method Thereof
JP5814029B2 (ja) * 2011-07-26 2015-11-17 日東電工株式会社 半導体装置製造用の接着シート、及び、半導体装置製造用の接着シートを有する半導体装置
EP2891158A1 (en) 2012-08-31 2015-07-08 Heraeus Deutschland GmbH & Co. KG An electro-conductive paste comprising ag nano-particles and spherical ag micro-particles in the preparation of electrodes
US9171804B2 (en) 2012-11-19 2015-10-27 Infineon Technologies Ag Method for fabricating an electronic component
EP2763141B1 (en) * 2013-02-01 2016-02-03 Heraeus Precious Metals North America Conshohocken LLC Low fire silver paste
JP6106148B2 (ja) * 2013-11-27 2017-03-29 日東電工株式会社 導電性粘着テープ、電子部材及び粘着剤
EP3104400B1 (en) * 2014-02-04 2022-08-31 Murata Manufacturing Co., Ltd. Manufacturing method of electronic component module
JP2017221863A (ja) * 2014-10-30 2017-12-21 シンクランド株式会社 目詰まり推測方法及びフィルタ監視システム
US11107601B2 (en) 2016-12-14 2021-08-31 Japan Science And Technology Agency Elastic conductor, paste for forming elastic conductor, and method for producing elastic conductor
DE112018002911T5 (de) * 2017-06-07 2020-02-20 Tanaka Kikinzoku Kogyo K.K. Thermisch leitende und elektrisch leitende Adhäsivzusammensetzung
CN109119381A (zh) * 2018-08-06 2019-01-01 上海长园维安微电子有限公司 一种提高n衬底单向负阻型tvs芯片封装良率的胶水
JP7420138B2 (ja) * 2020-02-13 2024-01-23 東レ株式会社 ペースト、基板、ディスプレイ、および基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293213A (ja) * 1995-04-19 1996-11-05 Toyobo Co Ltd 金属めっき下地用導電性ペースト
JPH09176448A (ja) * 1995-12-25 1997-07-08 Matsushita Electric Ind Co Ltd 導電ペースト
JP2000053733A (ja) * 1998-08-11 2000-02-22 Sumitomo Bakelite Co Ltd 導電性樹脂ペースト及びこれを用いた半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09282941A (ja) * 1996-04-16 1997-10-31 Ube Ind Ltd 導電性ペースト並びにそれを用いた積層セラミック電子部品およびその製造方法
US5908881A (en) * 1996-11-29 1999-06-01 Sumitomo Bakelite Company Limited Heat-conductive paste
JPH11150135A (ja) * 1997-11-17 1999-06-02 Nec Corp 熱伝導性が良好な導電性ペースト及び電子部品
JP3416044B2 (ja) * 1997-12-25 2003-06-16 第一工業製薬株式会社 低温焼成基板用導電ペースト
KR100369565B1 (ko) * 1999-12-17 2003-01-29 대주정밀화학 주식회사 전기발열체용 저항 페이스트 조성물

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08293213A (ja) * 1995-04-19 1996-11-05 Toyobo Co Ltd 金属めっき下地用導電性ペースト
JPH09176448A (ja) * 1995-12-25 1997-07-08 Matsushita Electric Ind Co Ltd 導電ペースト
JP2000053733A (ja) * 1998-08-11 2000-02-22 Sumitomo Bakelite Co Ltd 導電性樹脂ペースト及びこれを用いた半導体装置

Also Published As

Publication number Publication date
US20030122257A1 (en) 2003-07-03
TWI233620B (en) 2005-06-01
DE10228484B4 (de) 2009-10-15
JP3854103B2 (ja) 2006-12-06
CN1201337C (zh) 2005-05-11
US6733695B2 (en) 2004-05-11
DE10228484A1 (de) 2003-01-16
JP2003016838A (ja) 2003-01-17
CN1395259A (zh) 2003-02-05

Similar Documents

Publication Publication Date Title
SG104973A1 (en) Electrically conductive paste and semiconductor device prepared by using the paste
CA2265199A1 (en) High temperature ptc device and conductive polymer composition
WO2005066252A3 (en) Inorganic powder, resin composition filled with the powder and use thereof
EP0944098A3 (en) Thermally conductive electrical insulating composition
TW200600542A (en) Compositions with polymers for advanced materials
EP1167559A4 (en) COMPOSITE MATERIAL AND USE THEREOF
CN107396466A (zh) 电子浆料及其制备方法、厚膜电路芯片热源及其制备方法
CN201036072Y (zh) 带环氧树脂粉末喷涂绝缘层的母线导体
CN106084797A (zh) 用于电子产品的硅胶垫片
CN106783753A (zh) 半导体器件
CN201756528U (zh) 一种聚酰亚胺薄膜压敏胶带
US20080186128A1 (en) Polymeric positive temperature coefficient thermistor and process for preparing the same
CN101597430A (zh) 一种填充型导热硅橡胶复合材料的制备方法
TW200604130A (en) Thick-film dielectric and conductive compositions
CN203205169U (zh) 一种精密模压片式电阻器
AU2003248946A1 (en) Electrical heating cable
WO2003046984A3 (en) Electromagnetic shield
CN209260822U (zh) 一种纳米小分子水发生装置及美容仪
CN206432253U (zh) 半导体器件
JPS5662345A (en) Load frame and semiconductor device
WO2005038907A3 (de) Wärmeleitende verpackung von elektronischen schaltungseinheiten
EP1215237A3 (en) Electrical wire having a covering of a resin composition
CN206575621U (zh) 一种发热电阻器结构
CN204425674U (zh) Ptc陶瓷加热器
CN108281394A (zh) 一种材料及用作电子封装材料的用途