SG10201803744QA - Wafer processing method - Google Patents

Wafer processing method

Info

Publication number
SG10201803744QA
SG10201803744QA SG10201803744QA SG10201803744QA SG10201803744QA SG 10201803744Q A SG10201803744Q A SG 10201803744QA SG 10201803744Q A SG10201803744Q A SG 10201803744QA SG 10201803744Q A SG10201803744Q A SG 10201803744QA SG 10201803744Q A SG10201803744Q A SG 10201803744QA
Authority
SG
Singapore
Prior art keywords
wafer
protective film
processing method
front side
protective member
Prior art date
Application number
SG10201803744QA
Other languages
English (en)
Inventor
Sekiya Kazuma
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201803744QA publication Critical patent/SG10201803744QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
SG10201803744QA 2017-05-11 2018-05-03 Wafer processing method SG10201803744QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017094916A JP6925714B2 (ja) 2017-05-11 2017-05-11 ウェーハの加工方法

Publications (1)

Publication Number Publication Date
SG10201803744QA true SG10201803744QA (en) 2018-12-28

Family

ID=63962499

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201803744QA SG10201803744QA (en) 2017-05-11 2018-05-03 Wafer processing method

Country Status (7)

Country Link
US (1) US10403490B2 (de)
JP (1) JP6925714B2 (de)
KR (1) KR102445608B1 (de)
CN (1) CN108878341B (de)
DE (1) DE102018207255A1 (de)
SG (1) SG10201803744QA (de)
TW (1) TWI788342B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155270B (zh) * 2017-12-13 2019-09-20 北京创昱科技有限公司 一种薄膜与晶片的分离装置和分离方法
JP7071782B2 (ja) * 2017-12-28 2022-05-19 株式会社ディスコ ウェーハの加工方法
JP7257199B2 (ja) * 2019-03-18 2023-04-13 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
JP2021012936A (ja) * 2019-07-05 2021-02-04 株式会社ディスコ 光デバイスの移設方法
JP7286250B2 (ja) * 2019-08-07 2023-06-05 株式会社ディスコ 保護部材形成装置
JP7266953B2 (ja) * 2019-08-07 2023-05-01 株式会社ディスコ 保護部材形成方法及び保護部材形成装置
JP7382171B2 (ja) * 2019-08-09 2023-11-16 株式会社ディスコ 樹脂シートの剥離方法
WO2022190916A1 (ja) * 2021-03-08 2022-09-15 リンテック株式会社 半導体装置の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5927993A (en) * 1992-02-03 1999-07-27 Motorola, Inc. Backside processing method
JP3556399B2 (ja) 1996-07-29 2004-08-18 株式会社ディスコ 半導体ウエーハの研磨方法
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
JP4397625B2 (ja) * 2003-06-02 2010-01-13 株式会社ディスコ チップの剥離方法
US7226812B2 (en) * 2004-03-31 2007-06-05 Intel Corporation Wafer support and release in wafer processing
US7507638B2 (en) * 2004-06-30 2009-03-24 Freescale Semiconductor, Inc. Ultra-thin die and method of fabricating same
JP2007266191A (ja) * 2006-03-28 2007-10-11 Nec Electronics Corp ウェハ処理方法
JP2009123835A (ja) * 2007-11-13 2009-06-04 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP5317267B2 (ja) * 2008-11-14 2013-10-16 株式会社タカトリ ウエハのマウント装置
JP2011165741A (ja) * 2010-02-05 2011-08-25 Renesas Electronics Corp 半導体装置およびその製造方法
CN102763211B (zh) * 2010-06-02 2014-11-05 三井化学东赛璐株式会社 半导体晶片表面保护用薄片、使用其的半导体晶片的保护方法以及半导体装置的制造方法
JP5600035B2 (ja) * 2010-06-30 2014-10-01 株式会社ディスコ ウエーハの分割方法
US9064883B2 (en) * 2011-08-25 2015-06-23 Intel Mobile Communications GmbH Chip with encapsulated sides and exposed surface
WO2013089142A1 (ja) * 2011-12-13 2013-06-20 日立化成株式会社 半導体装置の製造方法
JP2013162096A (ja) * 2012-02-08 2013-08-19 Fujitsu Semiconductor Ltd 半導体チップの製造方法及びラミネート装置
US8845854B2 (en) * 2012-07-13 2014-09-30 Applied Materials, Inc. Laser, plasma etch, and backside grind process for wafer dicing
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
JP2014165338A (ja) * 2013-02-25 2014-09-08 Disco Abrasive Syst Ltd レーザー加工方法
KR102136844B1 (ko) * 2013-09-30 2020-07-22 삼성전자 주식회사 웨이퍼 가공 방법 및 그 가공 방법을 이용한 반도체 소자 제조방법
JP6366351B2 (ja) * 2014-05-13 2018-08-01 株式会社ディスコ ウェーハの加工方法
JP6390040B2 (ja) * 2014-07-30 2018-09-19 リンテック株式会社 粘着シートの貼付部材、貼付装置、および貼付方法
JP2017005158A (ja) * 2015-06-12 2017-01-05 株式会社ディスコ ウエーハの裏面研削方法
JP6559013B2 (ja) * 2015-08-20 2019-08-14 リンテック株式会社 シート貼付装置および貼付方法
WO2017036512A1 (en) * 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method
DE102015216619B4 (de) * 2015-08-31 2017-08-10 Disco Corporation Verfahren zum Bearbeiten eines Wafers
JP2017076643A (ja) * 2015-10-13 2017-04-20 日東電工株式会社 粘着テープ貼付け方法および粘着テープ貼付け装置
JP2017079291A (ja) * 2015-10-21 2017-04-27 株式会社ディスコ ウエーハの加工方法
US9865477B2 (en) * 2016-02-24 2018-01-09 Taiwan Semiconductor Manufacturing Co., Ltd. Backside polisher with dry frontside design and method using the same
US10109475B2 (en) * 2016-07-29 2018-10-23 Semiconductor Components Industries, Llc Semiconductor wafer and method of reducing wafer thickness with asymmetric edge support ring encompassing wafer scribe mark

Also Published As

Publication number Publication date
TWI788342B (zh) 2023-01-01
TW201901781A (zh) 2019-01-01
DE102018207255A1 (de) 2018-11-15
CN108878341B (zh) 2024-02-02
JP6925714B2 (ja) 2021-08-25
US10403490B2 (en) 2019-09-03
CN108878341A (zh) 2018-11-23
US20180330938A1 (en) 2018-11-15
KR102445608B1 (ko) 2022-09-20
JP2018190937A (ja) 2018-11-29
KR20180124757A (ko) 2018-11-21

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