SE513512C2 - Halvledaranordning med ett flytande kollektorområde - Google Patents

Halvledaranordning med ett flytande kollektorområde

Info

Publication number
SE513512C2
SE513512C2 SE9403722A SE9403722A SE513512C2 SE 513512 C2 SE513512 C2 SE 513512C2 SE 9403722 A SE9403722 A SE 9403722A SE 9403722 A SE9403722 A SE 9403722A SE 513512 C2 SE513512 C2 SE 513512C2
Authority
SE
Sweden
Prior art keywords
region
silicon layer
doped
base region
base
Prior art date
Application number
SE9403722A
Other languages
English (en)
Swedish (sv)
Other versions
SE9403722D0 (sv
SE9403722L (sv
Inventor
Torkel Bengt Arnborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9403722A priority Critical patent/SE513512C2/sv
Publication of SE9403722D0 publication Critical patent/SE9403722D0/xx
Priority to CN95195973A priority patent/CN1088261C/zh
Priority to JP8514502A priority patent/JPH10508155A/ja
Priority to AU38575/95A priority patent/AU3857595A/en
Priority to US08/836,426 priority patent/US5939759A/en
Priority to EP95936829A priority patent/EP0789933A2/en
Priority to PCT/SE1995/001284 priority patent/WO1996013862A1/en
Priority to CA002204136A priority patent/CA2204136A1/en
Publication of SE9403722L publication Critical patent/SE9403722L/
Priority to FI971753A priority patent/FI971753A/fi
Publication of SE513512C2 publication Critical patent/SE513512C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
SE9403722A 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde SE513512C2 (sv)

Priority Applications (9)

Application Number Priority Date Filing Date Title
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde
CA002204136A CA2204136A1 (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
US08/836,426 US5939759A (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
JP8514502A JPH10508155A (ja) 1994-10-31 1995-10-31 浮動コレクタを有する絶縁材上シリコン半導体装置
AU38575/95A AU3857595A (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
CN95195973A CN1088261C (zh) 1994-10-31 1995-10-31 具有浮动集电区的绝缘体上的硅器件
EP95936829A EP0789933A2 (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
PCT/SE1995/001284 WO1996013862A1 (en) 1994-10-31 1995-10-31 Silicon-on-insulator device with floating collector
FI971753A FI971753A (fi) 1994-10-31 1997-04-24 Piitä sisältävä eristyslaite, jolla on kelluva kollektori

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde

Publications (3)

Publication Number Publication Date
SE9403722D0 SE9403722D0 (sv) 1994-10-31
SE9403722L SE9403722L (sv) 1996-05-01
SE513512C2 true SE513512C2 (sv) 2000-09-25

Family

ID=20395797

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9403722A SE513512C2 (sv) 1994-10-31 1994-10-31 Halvledaranordning med ett flytande kollektorområde

Country Status (9)

Country Link
US (1) US5939759A (zh)
EP (1) EP0789933A2 (zh)
JP (1) JPH10508155A (zh)
CN (1) CN1088261C (zh)
AU (1) AU3857595A (zh)
CA (1) CA2204136A1 (zh)
FI (1) FI971753A (zh)
SE (1) SE513512C2 (zh)
WO (1) WO1996013862A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002532885A (ja) * 1998-12-04 2002-10-02 インフィネオン テクノロジース アクチエンゲゼルシャフト 出力半導体回路
US7760103B2 (en) * 2001-10-26 2010-07-20 Innovative American Technology, Inc. Multi-stage system for verification of container contents
US8350352B2 (en) 2009-11-02 2013-01-08 Analog Devices, Inc. Bipolar transistor
US9099489B2 (en) * 2012-07-10 2015-08-04 Freescale Semiconductor Inc. Bipolar transistor with high breakdown voltage
CN108155226A (zh) * 2017-12-22 2018-06-12 杭州士兰微电子股份有限公司 Npn型三极管及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3995307A (en) * 1973-12-28 1976-11-30 International Business Machines Corporation Integrated monolithic switch for high voltage applications
DE3029553A1 (de) * 1980-08-04 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
JPS6213071A (ja) * 1985-07-10 1987-01-21 Mitsubishi Electric Corp 半導体装置の製造方法
US4861731A (en) * 1988-02-02 1989-08-29 General Motors Corporation Method of fabricating a lateral dual gate thyristor
JPH0382041A (ja) * 1989-08-24 1991-04-08 Fujitsu Ltd 半導体集積回路の製造方法
EP0462270B1 (en) * 1990-01-08 2000-08-30 Harris Corporation Method of using a semiconductor device comprising a substrate having a dielectrically isolated semiconductor island
US5621239A (en) * 1990-11-05 1997-04-15 Fujitsu Limited SOI device having a buried layer of reduced resistivity
JP2746499B2 (ja) * 1992-05-15 1998-05-06 三菱電機株式会社 半導体装置及びその製造方法
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
JP3232168B2 (ja) * 1993-07-02 2001-11-26 三菱電機株式会社 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置

Also Published As

Publication number Publication date
SE9403722D0 (sv) 1994-10-31
CN1165585A (zh) 1997-11-19
WO1996013862A1 (en) 1996-05-09
US5939759A (en) 1999-08-17
AU3857595A (en) 1996-05-23
CN1088261C (zh) 2002-07-24
CA2204136A1 (en) 1996-05-09
SE9403722L (sv) 1996-05-01
FI971753A0 (fi) 1997-04-24
JPH10508155A (ja) 1998-08-04
FI971753A (fi) 1997-04-24
EP0789933A2 (en) 1997-08-20

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Legal Events

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