SE513512C2 - Halvledaranordning med ett flytande kollektorområde - Google Patents
Halvledaranordning med ett flytande kollektorområdeInfo
- Publication number
- SE513512C2 SE513512C2 SE9403722A SE9403722A SE513512C2 SE 513512 C2 SE513512 C2 SE 513512C2 SE 9403722 A SE9403722 A SE 9403722A SE 9403722 A SE9403722 A SE 9403722A SE 513512 C2 SE513512 C2 SE 513512C2
- Authority
- SE
- Sweden
- Prior art keywords
- region
- silicon layer
- doped
- base region
- base
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 10
- 230000002452 interceptive effect Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9403722A SE513512C2 (sv) | 1994-10-31 | 1994-10-31 | Halvledaranordning med ett flytande kollektorområde |
CA002204136A CA2204136A1 (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
US08/836,426 US5939759A (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
JP8514502A JPH10508155A (ja) | 1994-10-31 | 1995-10-31 | 浮動コレクタを有する絶縁材上シリコン半導体装置 |
AU38575/95A AU3857595A (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
CN95195973A CN1088261C (zh) | 1994-10-31 | 1995-10-31 | 具有浮动集电区的绝缘体上的硅器件 |
EP95936829A EP0789933A2 (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
PCT/SE1995/001284 WO1996013862A1 (en) | 1994-10-31 | 1995-10-31 | Silicon-on-insulator device with floating collector |
FI971753A FI971753A (fi) | 1994-10-31 | 1997-04-24 | Piitä sisältävä eristyslaite, jolla on kelluva kollektori |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9403722A SE513512C2 (sv) | 1994-10-31 | 1994-10-31 | Halvledaranordning med ett flytande kollektorområde |
Publications (3)
Publication Number | Publication Date |
---|---|
SE9403722D0 SE9403722D0 (sv) | 1994-10-31 |
SE9403722L SE9403722L (sv) | 1996-05-01 |
SE513512C2 true SE513512C2 (sv) | 2000-09-25 |
Family
ID=20395797
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9403722A SE513512C2 (sv) | 1994-10-31 | 1994-10-31 | Halvledaranordning med ett flytande kollektorområde |
Country Status (9)
Country | Link |
---|---|
US (1) | US5939759A (zh) |
EP (1) | EP0789933A2 (zh) |
JP (1) | JPH10508155A (zh) |
CN (1) | CN1088261C (zh) |
AU (1) | AU3857595A (zh) |
CA (1) | CA2204136A1 (zh) |
FI (1) | FI971753A (zh) |
SE (1) | SE513512C2 (zh) |
WO (1) | WO1996013862A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002532885A (ja) * | 1998-12-04 | 2002-10-02 | インフィネオン テクノロジース アクチエンゲゼルシャフト | 出力半導体回路 |
US7760103B2 (en) * | 2001-10-26 | 2010-07-20 | Innovative American Technology, Inc. | Multi-stage system for verification of container contents |
US8350352B2 (en) | 2009-11-02 | 2013-01-08 | Analog Devices, Inc. | Bipolar transistor |
US9099489B2 (en) * | 2012-07-10 | 2015-08-04 | Freescale Semiconductor Inc. | Bipolar transistor with high breakdown voltage |
CN108155226A (zh) * | 2017-12-22 | 2018-06-12 | 杭州士兰微电子股份有限公司 | Npn型三极管及其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3995307A (en) * | 1973-12-28 | 1976-11-30 | International Business Machines Corporation | Integrated monolithic switch for high voltage applications |
DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
JPS59161867A (ja) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | 半導体装置 |
JPS6213071A (ja) * | 1985-07-10 | 1987-01-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4861731A (en) * | 1988-02-02 | 1989-08-29 | General Motors Corporation | Method of fabricating a lateral dual gate thyristor |
JPH0382041A (ja) * | 1989-08-24 | 1991-04-08 | Fujitsu Ltd | 半導体集積回路の製造方法 |
EP0462270B1 (en) * | 1990-01-08 | 2000-08-30 | Harris Corporation | Method of using a semiconductor device comprising a substrate having a dielectrically isolated semiconductor island |
US5621239A (en) * | 1990-11-05 | 1997-04-15 | Fujitsu Limited | SOI device having a buried layer of reduced resistivity |
JP2746499B2 (ja) * | 1992-05-15 | 1998-05-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
FR2694449B1 (fr) * | 1992-07-09 | 1994-10-28 | France Telecom | Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant. |
SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
JP3232168B2 (ja) * | 1993-07-02 | 2001-11-26 | 三菱電機株式会社 | 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置 |
-
1994
- 1994-10-31 SE SE9403722A patent/SE513512C2/sv not_active IP Right Cessation
-
1995
- 1995-10-31 AU AU38575/95A patent/AU3857595A/en not_active Abandoned
- 1995-10-31 US US08/836,426 patent/US5939759A/en not_active Expired - Lifetime
- 1995-10-31 CA CA002204136A patent/CA2204136A1/en not_active Abandoned
- 1995-10-31 EP EP95936829A patent/EP0789933A2/en not_active Withdrawn
- 1995-10-31 JP JP8514502A patent/JPH10508155A/ja active Pending
- 1995-10-31 WO PCT/SE1995/001284 patent/WO1996013862A1/en not_active Application Discontinuation
- 1995-10-31 CN CN95195973A patent/CN1088261C/zh not_active Expired - Lifetime
-
1997
- 1997-04-24 FI FI971753A patent/FI971753A/fi unknown
Also Published As
Publication number | Publication date |
---|---|
SE9403722D0 (sv) | 1994-10-31 |
CN1165585A (zh) | 1997-11-19 |
WO1996013862A1 (en) | 1996-05-09 |
US5939759A (en) | 1999-08-17 |
AU3857595A (en) | 1996-05-23 |
CN1088261C (zh) | 2002-07-24 |
CA2204136A1 (en) | 1996-05-09 |
SE9403722L (sv) | 1996-05-01 |
FI971753A0 (fi) | 1997-04-24 |
JPH10508155A (ja) | 1998-08-04 |
FI971753A (fi) | 1997-04-24 |
EP0789933A2 (en) | 1997-08-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |