KR910008844A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR910008844A KR910008844A KR1019900016648A KR900016648A KR910008844A KR 910008844 A KR910008844 A KR 910008844A KR 1019900016648 A KR1019900016648 A KR 1019900016648A KR 900016648 A KR900016648 A KR 900016648A KR 910008844 A KR910008844 A KR 910008844A
- Authority
- KR
- South Korea
- Prior art keywords
- conductivity type
- opposite conductivity
- regions
- region
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 239000012535 impurity Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 7
- 239000012212 insulator Substances 0.000 claims 4
- 230000006698 induction Effects 0.000 claims 3
- 230000001939 inductive effect Effects 0.000 claims 2
- 210000000813 small intestine Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 따른 반도체 장치의 제1실시예의 단면도.
제2도는 제1도를 실시예의 MIS 용량성 소장에 대한 확대 단면도.
제3도는 본 발명에 따른 반도체 장치의 제2실시예에 따른 단면도.
Claims (6)
- MIS 구조의 용량성 소자를 가진 반도체 장치에 있어서, 상기 용량성 소자가, 필드 절연체막에 있는 틈에 인접한 불순물 영역상의 유전체 층을 통해 전극이 형성되는 MIS 세그멘트와 전극 유도 세그겜트를 포함하고 있으며, 또한 상기 전극 유도 세그멘트의 전극 유도 영역과 상기 MIS 세그멘트의 불순물 영역을 전기적으로 접속하는 고농도 불순물 영역을 포함하고 상기 고농도 불순물 영역을 단지 상기 불순물 영역과 상기 전극 유도 영역의 치단 엣지 사이에 뻗어 있는 반도체 장치.
- MIS 용량성 소자를 포함하는 반도체 장치에 있어서, 제1전도형의 반도체 기판과, 상기 기판에 형성된 반대전도형의 아일런드 영역과, 상기 아일런드 영역에 형성되며 서로 측방향으로 이격된 고 불순물 농도로된 반대전도형의 제1 및 제2영역과, 반대 전도형의 상기 제1및 제2영역의 가장 가까운 인접 엣지 사이에 뻗어 있으며 상기 아일런드 영역에 형성된 고 불순물 농도로된 반대 전도형의 매몰층 및 반대 전도형의 상기 제1 및 제2영역에 각각 접속된 제1및 제2전극을 포함해서 이루어진 반도체 장치.
- 제2항에 있어서, 상기 제1 및 제2전극 아래에 반대 전도형의 상기 제1및 제2영역에 형성된 반대 전도형의 제1및 제2전극 유도 영역을 포함하고 있는 반도체 장치.
- 제3항에 있어서, 상기 제1및 제2유도용 개구를 제외하고 상기 기판상에 형성된 필드 절연체를 포함하고 있는 반도체 장치.
- 제4항에 있어서, 상기 필드 절연체 막과 상기 제1틈위에 형성된 유전체층을 포함하고 있는 반도체 장치.
- MIS용량성 소자를 포함하는 반도체 장치에 있어서, 제1전도형의 기판과, 상기 기판에 형성된 반대 전도형의 아일런드 영역과, 상기 아일런드 영역에 형성되며 서로 측방으로 이격된 고불순물 농도로된 반대 전도형의 제1 및 제2영역과, 반대 전도형의 상기 제1및 제2영역의 가장 가까운 인접한 엣지 사이에 뻗어 있으며 상기 기판의 표면에 인접한 고불순물 농도로된 반대 전도형의 제3영역과, 반대 전도형의 상기 제1및 제2영역위에 제1및 제2틈을 제외하고 상기 기판 표면의 표면에 형성된 필드 절연체 층 및, 상기 제1 및 제2틈에 형성된 제1 및 제2전극을 포함해서 이루어진 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-272341 | 1989-10-19 | ||
JP1272341A JP3038731B2 (ja) | 1989-10-19 | 1989-10-19 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008844A true KR910008844A (ko) | 1991-05-31 |
KR100221440B1 KR100221440B1 (ko) | 1999-09-15 |
Family
ID=17512539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900016648A KR100221440B1 (ko) | 1989-10-19 | 1990-10-19 | 용량성 소자를 갖는 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5055905A (ko) |
EP (1) | EP0423791B1 (ko) |
JP (1) | JP3038731B2 (ko) |
KR (1) | KR100221440B1 (ko) |
DE (1) | DE69026675T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050030940A (ko) * | 2005-03-09 | 2005-03-31 | 손은일 | 다층 알루미늄 라미네이트 튜브용 시트 및 그 제조 방법 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04352467A (ja) * | 1991-05-30 | 1992-12-07 | Toshiba Corp | Mos型半導体集積回路装置 |
KR940018967A (ko) * | 1993-01-30 | 1994-08-19 | 오가 노리오 | 반도체장치 및 그 제조방법 |
US5377072A (en) * | 1994-01-10 | 1994-12-27 | Motorola Inc. | Single metal-plate bypass capacitor |
US5608258A (en) * | 1995-03-16 | 1997-03-04 | Zilog, Inc. | MOS precision capacitor with low voltage coefficient |
JPH1012825A (ja) * | 1996-06-26 | 1998-01-16 | Oki Electric Ind Co Ltd | 半導体集積回路装置 |
JP2000021972A (ja) * | 1998-07-03 | 2000-01-21 | Fujitsu Ltd | 半導体装置 |
JP2000101045A (ja) * | 1998-07-23 | 2000-04-07 | Mitsubishi Electric Corp | 半導体装置 |
EP1560269A1 (en) * | 2004-01-30 | 2005-08-03 | Alcatel | MOS capacitor in an integrated semiconductor circuit |
JP2005259953A (ja) * | 2004-03-11 | 2005-09-22 | Toshiba Corp | 半導体装置 |
JP2013149710A (ja) * | 2012-01-18 | 2013-08-01 | Fujitsu Ltd | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4686557A (en) * | 1980-09-19 | 1987-08-11 | Siemens Aktiengesellschaft | Semiconductor element and method for producing the same |
US4887135A (en) * | 1982-02-09 | 1989-12-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dual level polysilicon single transistor-capacitor memory array |
US4805071A (en) * | 1987-11-30 | 1989-02-14 | Texas Instruments Incorporated | High voltage capacitor for integrated circuits |
US4933739A (en) * | 1988-04-26 | 1990-06-12 | Eliyahou Harari | Trench resistor structures for compact semiconductor memory and logic devices |
-
1989
- 1989-10-19 JP JP1272341A patent/JP3038731B2/ja not_active Expired - Fee Related
-
1990
- 1990-10-18 DE DE69026675T patent/DE69026675T2/de not_active Expired - Fee Related
- 1990-10-18 EP EP90120002A patent/EP0423791B1/en not_active Expired - Lifetime
- 1990-10-19 KR KR1019900016648A patent/KR100221440B1/ko not_active IP Right Cessation
- 1990-10-19 US US07/599,869 patent/US5055905A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050030940A (ko) * | 2005-03-09 | 2005-03-31 | 손은일 | 다층 알루미늄 라미네이트 튜브용 시트 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP3038731B2 (ja) | 2000-05-08 |
KR100221440B1 (ko) | 1999-09-15 |
EP0423791A1 (en) | 1991-04-24 |
JPH03133170A (ja) | 1991-06-06 |
US5055905A (en) | 1991-10-08 |
EP0423791B1 (en) | 1996-04-24 |
DE69026675T2 (de) | 1996-11-28 |
DE69026675D1 (de) | 1996-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20070531 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |