KR910008844A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR910008844A
KR910008844A KR1019900016648A KR900016648A KR910008844A KR 910008844 A KR910008844 A KR 910008844A KR 1019900016648 A KR1019900016648 A KR 1019900016648A KR 900016648 A KR900016648 A KR 900016648A KR 910008844 A KR910008844 A KR 910008844A
Authority
KR
South Korea
Prior art keywords
conductivity type
opposite conductivity
regions
region
semiconductor device
Prior art date
Application number
KR1019900016648A
Other languages
English (en)
Other versions
KR100221440B1 (ko
Inventor
히로아끼 안모
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR910008844A publication Critical patent/KR910008844A/ko
Application granted granted Critical
Publication of KR100221440B1 publication Critical patent/KR100221440B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/94Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 따른 반도체 장치의 제1실시예의 단면도.
제2도는 제1도를 실시예의 MIS 용량성 소장에 대한 확대 단면도.
제3도는 본 발명에 따른 반도체 장치의 제2실시예에 따른 단면도.

Claims (6)

  1. MIS 구조의 용량성 소자를 가진 반도체 장치에 있어서, 상기 용량성 소자가, 필드 절연체막에 있는 틈에 인접한 불순물 영역상의 유전체 층을 통해 전극이 형성되는 MIS 세그멘트와 전극 유도 세그겜트를 포함하고 있으며, 또한 상기 전극 유도 세그멘트의 전극 유도 영역과 상기 MIS 세그멘트의 불순물 영역을 전기적으로 접속하는 고농도 불순물 영역을 포함하고 상기 고농도 불순물 영역을 단지 상기 불순물 영역과 상기 전극 유도 영역의 치단 엣지 사이에 뻗어 있는 반도체 장치.
  2. MIS 용량성 소자를 포함하는 반도체 장치에 있어서, 제1전도형의 반도체 기판과, 상기 기판에 형성된 반대전도형의 아일런드 영역과, 상기 아일런드 영역에 형성되며 서로 측방향으로 이격된 고 불순물 농도로된 반대전도형의 제1 및 제2영역과, 반대 전도형의 상기 제1및 제2영역의 가장 가까운 인접 엣지 사이에 뻗어 있으며 상기 아일런드 영역에 형성된 고 불순물 농도로된 반대 전도형의 매몰층 및 반대 전도형의 상기 제1 및 제2영역에 각각 접속된 제1및 제2전극을 포함해서 이루어진 반도체 장치.
  3. 제2항에 있어서, 상기 제1 및 제2전극 아래에 반대 전도형의 상기 제1및 제2영역에 형성된 반대 전도형의 제1및 제2전극 유도 영역을 포함하고 있는 반도체 장치.
  4. 제3항에 있어서, 상기 제1및 제2유도용 개구를 제외하고 상기 기판상에 형성된 필드 절연체를 포함하고 있는 반도체 장치.
  5. 제4항에 있어서, 상기 필드 절연체 막과 상기 제1틈위에 형성된 유전체층을 포함하고 있는 반도체 장치.
  6. MIS용량성 소자를 포함하는 반도체 장치에 있어서, 제1전도형의 기판과, 상기 기판에 형성된 반대 전도형의 아일런드 영역과, 상기 아일런드 영역에 형성되며 서로 측방으로 이격된 고불순물 농도로된 반대 전도형의 제1 및 제2영역과, 반대 전도형의 상기 제1및 제2영역의 가장 가까운 인접한 엣지 사이에 뻗어 있으며 상기 기판의 표면에 인접한 고불순물 농도로된 반대 전도형의 제3영역과, 반대 전도형의 상기 제1및 제2영역위에 제1및 제2틈을 제외하고 상기 기판 표면의 표면에 형성된 필드 절연체 층 및, 상기 제1 및 제2틈에 형성된 제1 및 제2전극을 포함해서 이루어진 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016648A 1989-10-19 1990-10-19 용량성 소자를 갖는 반도체 장치 KR100221440B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-272341 1989-10-19
JP1272341A JP3038731B2 (ja) 1989-10-19 1989-10-19 半導体装置

Publications (2)

Publication Number Publication Date
KR910008844A true KR910008844A (ko) 1991-05-31
KR100221440B1 KR100221440B1 (ko) 1999-09-15

Family

ID=17512539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016648A KR100221440B1 (ko) 1989-10-19 1990-10-19 용량성 소자를 갖는 반도체 장치

Country Status (5)

Country Link
US (1) US5055905A (ko)
EP (1) EP0423791B1 (ko)
JP (1) JP3038731B2 (ko)
KR (1) KR100221440B1 (ko)
DE (1) DE69026675T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050030940A (ko) * 2005-03-09 2005-03-31 손은일 다층 알루미늄 라미네이트 튜브용 시트 및 그 제조 방법

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352467A (ja) * 1991-05-30 1992-12-07 Toshiba Corp Mos型半導体集積回路装置
KR940018967A (ko) * 1993-01-30 1994-08-19 오가 노리오 반도체장치 및 그 제조방법
US5377072A (en) * 1994-01-10 1994-12-27 Motorola Inc. Single metal-plate bypass capacitor
US5608258A (en) * 1995-03-16 1997-03-04 Zilog, Inc. MOS precision capacitor with low voltage coefficient
JPH1012825A (ja) * 1996-06-26 1998-01-16 Oki Electric Ind Co Ltd 半導体集積回路装置
JP2000021972A (ja) * 1998-07-03 2000-01-21 Fujitsu Ltd 半導体装置
JP2000101045A (ja) * 1998-07-23 2000-04-07 Mitsubishi Electric Corp 半導体装置
EP1560269A1 (en) * 2004-01-30 2005-08-03 Alcatel MOS capacitor in an integrated semiconductor circuit
JP2005259953A (ja) * 2004-03-11 2005-09-22 Toshiba Corp 半導体装置
JP2013149710A (ja) * 2012-01-18 2013-08-01 Fujitsu Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686557A (en) * 1980-09-19 1987-08-11 Siemens Aktiengesellschaft Semiconductor element and method for producing the same
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
US4805071A (en) * 1987-11-30 1989-02-14 Texas Instruments Incorporated High voltage capacitor for integrated circuits
US4933739A (en) * 1988-04-26 1990-06-12 Eliyahou Harari Trench resistor structures for compact semiconductor memory and logic devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050030940A (ko) * 2005-03-09 2005-03-31 손은일 다층 알루미늄 라미네이트 튜브용 시트 및 그 제조 방법

Also Published As

Publication number Publication date
JP3038731B2 (ja) 2000-05-08
KR100221440B1 (ko) 1999-09-15
EP0423791A1 (en) 1991-04-24
JPH03133170A (ja) 1991-06-06
US5055905A (en) 1991-10-08
EP0423791B1 (en) 1996-04-24
DE69026675T2 (de) 1996-11-28
DE69026675D1 (de) 1996-05-30

Similar Documents

Publication Publication Date Title
KR970072395A (ko) 반도체 장치
KR890003036A (ko) 반도체장치
KR950007022A (ko) 개선된 소오스-하이 성능을 갖는 실리콘 절연체의 트랜지스터
KR860002153A (ko) 반도체 장치
KR950034767A (ko) Mis형 반도체장치
KR920001753A (ko) 종형 mos 트랜지스터와 그 제조 방법
KR910014993A (ko) 반도체 디바이스 및 그 형성 방법
KR840003923A (ko) 반도체 메모리
KR870005464A (ko) 반도체장치
KR840006872A (ko) 반도체 집적회로장치 및 그 제조방법
KR970063662A (ko) 금속 교차선(crossover) 없이 레벨 쉬프트 동작을 하는 고전압 집적회로
KR900010994A (ko) 반도체 장치
KR850008052A (ko) 반도체 장치
KR910019235A (ko) 반도체기억장치
KR900019261A (ko) 반도체장치
KR910008844A (ko) 반도체 장치
KR920015577A (ko) 반도체장치
KR890016679A (ko) 반도체장치
KR900013652A (ko) 감소된 온 저항을 가진 soi구조의 고전압 반도체 장치
KR880008458A (ko) 보충 측면 절연 게이트 정류기
KR910019260A (ko) 반도체장치및 그의 제조방법
KR920005297A (ko) 반도체집적회로 장치
KR970004014A (ko) 반도체장치
KR960019766A (ko) 에스오아이(soi) 기판상의 모스페트(mosfet)
KR910008861A (ko) 집적회로소자

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
J201 Request for trial against refusal decision
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070531

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee