Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
  • H01L29/73—Bipolar junction transistors
  • H01L29/7317—Bipolar thin film transistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L29/0821—Collector regions of bipolar transistors

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (2)

Publications (2)

Family

ID=20395797

Family Applications (1)

Country Status (9)

Families Citing this family (5)

Family Cites Families (12)

• 1994
  • 1994-10-31 SE SE9403722A patent/SE513512C2/sv not_active IP Right Cessation
• 1995
  • 1995-10-31 AU AU38575/95A patent/AU3857595A/en not_active Abandoned
  • 1995-10-31 US US08/836,426 patent/US5939759A/en not_active Expired - Lifetime
  • 1995-10-31 CA CA002204136A patent/CA2204136A1/en not_active Abandoned
  • 1995-10-31 EP EP95936829A patent/EP0789933A2/en not_active Withdrawn
  • 1995-10-31 JP JP8514502A patent/JPH10508155A/ja active Pending
  • 1995-10-31 WO PCT/SE1995/001284 patent/WO1996013862A1/en not_active Application Discontinuation
  • 1995-10-31 CN CN95195973A patent/CN1088261C/zh not_active Expired - Lifetime
• 1997
  • 1997-04-24 FI FI971753A patent/FI971753A/fi unknown

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